Works (65)

2020 journal article

Observing relaxation in device quality InGaN templates by TEM techniques

APPLIED PHYSICS LETTERS, 116(10).

Source: Web Of Science
Added: April 6, 2020

2019 journal article

Growth and characterization of InxGa1-xN (0 < x < 0.16) templates for controlled emissions from MQW

Growth and characterization of InxGa1-xN (0 < x < 0.16) templates for controlled emissions from MQW. JOURNAL OF CRYSTAL GROWTH, 520, 18–26.

By: M. Abdelhamid, J. Reynolds, N. El-Masry & S. Bedair

Source: Web Of Science
Added: June 24, 2019

2018 journal article

Nature of electrical conduction in MoS2 films deposited by laser physical vapor deposition

Journal of Materials Science: Materials in Electronics, 29(16), 14180–14191.

By: K. Jagannadham, K. Das, C. Reynolds & N. El-Masry

Source: Crossref
Added: February 24, 2020

2017 journal article

Electric field control of ferromagnetism at room temperature in GaCrN (p-i-n) device structures

Applied Physics Letters, 111(8).

By: N. El-Masry, J. Zavada, J. Reynolds, C. Reynolds, Z. Liu & S. Bedair

Source: NC State University Libraries
Added: August 6, 2018

2015 journal article

Growth and characterization of high-quality, relaxed in (y) Ga1-y N templates for optoelectronic applications

Journal of Electronic Materials, 44(11), 4161–4166.

Source: NC State University Libraries
Added: August 6, 2018

2014 journal article

Enhanced radiative recombination and suppressed Auger process in semipolar and nonpolar InGaN/GaN quantum wells grown over GaN nanowires

Optics Letters, 39(6), 1501–1504.

By: G. You, J. Liu, Z. Jiang, L. Wang, N. El-Masry, A. Hosalli, S. Bedair, J. Xu

Source: NC State University Libraries
Added: August 6, 2018

2014 journal article

Strain-balanced InGaN/GaN multiple quantum wells

Applied Physics Letters, 105(3).

By: D. Broeck, D. Bharrat, A. Hosalli, N. El-Masry & S. Bedair

Source: NC State University Libraries
Added: August 6, 2018

2013 journal article

Carrier transport and improved collection in thin-barrier InGaAs/GaAsP strained quantum well solar cells

IEEE Journal of Photovoltaics, 3(1), 278–283.

Source: NC State University Libraries
Added: August 6, 2018

2013 journal article

Gallium nitride nanowires by maskless hot phosphoric wet etching

Applied Physics Letters, 103(8).

Source: NC State University Libraries
Added: August 6, 2018

2013 journal article

Interface properties of Ga(As,P)/(In,Ga)As strained multiple quantum well structures

Applied Physics Letters, 103(7).

By: J. Samberg, H. Alipour, G. Bradshaw, C. Carlin, P. Colter, J. LeBeau, N. El-Masry, S. Bedair

Source: NC State University Libraries
Added: August 6, 2018

2013 journal article

Inversion by metalorganic chemical vapor deposition from N- to Ga-polar gallium nitride and its application to multiple quantum well light-emitting diodes

Applied Physics Letters, 103(23), 231108.

By: A. Hosalli, D. Van Den Broeck, D. Bharrat, N. El-Masry & S. Bedair

Source: Crossref
Added: February 24, 2020

2013 journal article

Multifacet semipolar formation by controlling the groove depth via lateral sidewall epitaxy

Journal of Crystal Growth, 367, 88–93.

By: P. Frajtag, N. Nepal, T. Paskova, S. Bedair & N. El-Masry

Source: NC State University Libraries
Added: August 6, 2018

2013 conference paper

Tandem InGaP/GaAs-quantum well solar cells and their potential improvement through phosphorus carry-over management in multiple quantum well structures

2013 ieee 39th photovoltaic specialists conference (pvsc), 1737–1740.

By: J. Samberg, G. Bradshaw, C. Carlin, P. Colter, K. Edmondson, W. Hong, C. Fetzer, N. Karam, N. El-Masry, S. Bedair

Source: NC State University Libraries
Added: August 6, 2018

2012 conference paper

Overgrowth of GaN on GaN nanowires produced by mask-less etching

Journal of Crystal Growth, 352(1), 203–208.

By: P. Frajtag, A. Hosalli, J. Samberg, P. Colter, T. Paskova, N. El-Masry, S. Bedair

Source: NC State University Libraries
Added: August 6, 2018

2011 journal article

Embedded voids approach for low defect density in epitaxial GaN films

Applied Physics Letters, 98(2).

By: P. Frajtag, N. El-Masry, N. Nepal & S. Bedair

Source: NC State University Libraries
Added: August 6, 2018

2011 journal article

Embedded voids formation by overgrowth on GaN nanowires for high-quality GaN films

Journal of Crystal Growth, 322(1), 27–32.

By: P. Frajtag, J. Samberg, N. El-Masry, N. Nepal & S. Bedair

Source: NC State University Libraries
Added: August 6, 2018

2011 journal article

Improved light-emitting diode performance by conformal overgrowth of multiple quantum wells and fully coalesced p-type GaN on GaN nanowires

Applied Physics Letters, 98(14), 143104.

By: P. Frajtag, A. Hosalli, G. Bradshaw, N. Nepal, N. El-Masry & S. Bedair

Source: Crossref
Added: February 24, 2020

2011 conference paper

Light emitting diodes based on sidewall m-plane epitaxy of etched GaN/sapphire templates

Physica status solidi c: current topics in solid state physics, vol 8, no 7-8, 8(7-8).

By: N. Nepal, P. Frajtag, J. Zavada, N. El-Masry & S. Bedair

Source: NC State University Libraries
Added: August 6, 2018

2011 journal article

Strain relaxation in InxGa1-xN/GaN quantum well structures

Physica Status Solidi (c), 8(7-8), 2034–2037.

By: A. Emar, E. Berkman, J. Zavada, N. El-Masry & S. Bedair

Source: Crossref
Added: February 24, 2020

2010 conference paper

Ferromagnetism and near infrared luminescence in neodymium and erbium doped gallium nitride via diffusion

Novel materials and devices for spintronics, 1183, 45–50.

By: M. Luen, N. Nepal, P. Frajtag, J. Zavada, E. Brown, U. Hommerich, S. Bedair, N. El Masry

Source: NC State University Libraries
Added: August 6, 2018

2009 journal article

Electric field control of room temperature ferromagnetism in III-N dilute magnetic semiconductor films

Applied Physics Letters, 94(13).

Source: NC State University Libraries
Added: August 6, 2018

2008 journal article

Nearly lattice-matched n, i, and p layers for InGaN p-i-n photodiodes in the 365-500 nm spectral range

Applied Physics Letters, 92(10).

By: E. Berkman, N. El-Masry, A. Emara & S. Bedair

Source: NC State University Libraries
Added: August 6, 2018

2008 journal article

Thermal conductivity of semi-insulating, p-type, and n-type GaN films on sapphire

Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 26(3), 375–379.

By: K. Jagannadham, E. Berkman & N. Elmasry

Source: NC State University Libraries
Added: August 6, 2018

2007 journal article

Correlation between compositional fluctuation and magnetic properties of Tm-doped AlGaN alloys

Applied Physics Letters, 91(22).

By: N. Nepal, S. Bedair, N. El-Masry, D. Lee, A. Steckl & J. Zavada

Source: NC State University Libraries
Added: August 6, 2018

2007 journal article

Correlation between photoluminescence and magnetic properties of GaMnN films

Applied Physics Letters, 91(24).

By: N. Nepal, A. Mahros, S. Bedair, N. El-Masry & J. Zavada

Source: NC State University Libraries
Added: August 6, 2018

2007 journal article

Development of green, yellow, and amber light emitting diodes using InGaN multiple quantum well structures

Applied Physics Letters, 90(15).

Source: NC State University Libraries
Added: August 6, 2018

2007 journal article

Magnetic and magnetotransport properties of (AlGaN/GaN): Mg/(GaMnN) heterostructures at room temperature

Applied Physics Letters, 90(25).

By: A. Mahros, M. Luen, A. Emara, S. Bedair, E. Berkman, N. El-Masry, J. Zavada

Source: NC State University Libraries
Added: August 6, 2018

2005 journal article

Effect of doping on the magnetic properties of GaMnN: Fermi level engineering

Applied Physics Letters, 86(10).

By: M. Reed, F. Arkun, E. Berkman, N. Elmasry, J. Zavada, M. Luen, M. Reed, S. Bedair

Source: NC State University Libraries
Added: August 6, 2018

2005 journal article

Five-nanometer thick silicon on insulator layer

Journal of Applied Physics, 98(10).

By: N. Elmasry, M. Hunter, A. Elnaggar & S. Bedair

Source: NC State University Libraries
Added: August 6, 2018

2005 journal article

Magnetic properties of Mn-doped GaN andp-i-n junctions

Physica Status Solidi (c), 2(7), 2403–2406.

By: M. Reed, M. Reed, M. Luen, E. Berkman, F. Arkun, S. Bedair, J. Zavada, N. El-Masry

Source: Crossref
Added: February 24, 2020

2004 journal article

Dependence of ferromagnetic properties on carrier transfer at GaMnN/GaN: Mg interface

Applied Physics Letters, 85(17), 3809–3811.

By: F. Arkun, M. Reed, E. Berkman, N. El-Masry, J. Zavada, M. Reed, S. Bedair

Source: NC State University Libraries
Added: August 6, 2018

2004 journal article

Electrical characterization of B-10 doped diamond irradiated with low thermal neutron fluence

Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 22(4), 1191–1194.

By: M. Reed, M. Reed, K. Jagannadham, K. Verghese, S. Bedair, N. El-Masry, J. Butler

Source: NC State University Libraries
Added: August 6, 2018

2002 journal article

Effect of H-2 on nitrogen incorporation in the metalorganic chemical vapor deposition of GaAs1-yNy (0 <= y <= 0.08)

Applied Physics Letters, 80(14), 2475–2477.

Source: NC State University Libraries
Added: August 6, 2018

2001 journal article

Room temperature ferromagnetic properties of (Ga, Mn)N

Applied Physics Letters, 79(21), 3473–3475.

By: M. Reed, N. El-Masry, H. Stadelmaier, M. Ritums, M. Reed, C. Parker, J. Roberts, S. Bedair

Source: NC State University Libraries
Added: August 6, 2018

2001 journal article

Room temperature magnetic (Ga,Mn)N: a new material for spin electronic devices

Materials Letters, 51(6), 500–503.

By: M. Reed, M. Ritums, H. Stadelmaier, M. Reed, C. Parker, S. Bedair, N. El-Masry

Source: NC State University Libraries
Added: August 6, 2018

2001 journal article

Self-assembled AlInGaN quaternary superlattice structures

Applied Physics Letters, 79(11), 1616–1618.

Source: NC State University Libraries
Added: August 6, 2018

2001 journal article

Ultraviolet raman study of A(1)(LO) and E-2 phonons in InxGa1-xN alloys

Journal of Applied Physics, 89(1), 798–800.

Source: NC State University Libraries
Added: August 6, 2018

2000 journal article

Critical layer thickness determination of GaN/InGaN/GaN double heterostructures

Applied Physics Letters, 77(25), 4121–4123.

By: M. Reed, N. El-Masry, C. Parker, J. Roberts & S. Bedair

Source: NC State University Libraries
Added: August 6, 2018

2000 journal article

Epitaxial Y2O3 films grown on Si(111) by pulsed-laser ablation

Applied Physics Letters, 76(14), 1935–1937.

By: M. Hunter, M. Reed, N. El-Masry, J. Roberts & S. Bedair

Source: NC State University Libraries
Added: August 6, 2018

2000 journal article

Mn-prelayer effects on the epitaxial growth of MnSb on (111)B GaAs by pulsed laser deposition

Materials Letters, 42(1-2), 121–129.

By: S. Liu, S. Bedair & N. El-Masry

Source: NC State University Libraries
Added: August 6, 2018

2000 journal article

The planar Hall effect in MnSb films and MnSb-based multilayer structures grown on (111)B GaAs

Journal of Magnetism and Magnetic Materials, 218(2/3), 177–181.

By: M. Reed, S. Liu, J. Roberts, H. Stadelmaier, S. Bedair & N. El-Masry

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

A critical comparison between MOVPE and MBE growth of III-V nitride semiconductor materials for opto-electronic device applications

MRS Internet Journal of Nitride Semiconductor Research, 4S1(G5.10).

By: M. Johnson, Z. Yu, J. Brown, F. Koeck, N. El-Masry, H. Kong, J. Edmond, J. Cook, J. Schetzina

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Determination of the critical layer thickness in the InGaN/GaN heterostructures

Applied Physics Letters, 75(18), 2776–2778.

By: C. Parker, J. Roberts, S. Bedair, M. Reed, S. Liu & N. El-Masry

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Epitaxial lateral overgrowth of GaN on SiC and sapphire substrates

MRS Internet Journal of Nitride Semiconductor Research, 4S1(G4.3).

By: Z. Yu, M. Johnson, J. Brown, N. El-Masry, J. Muth, J. Cook, J. Schetzina, K. Haberern, H. Kong, J. Edmond

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Low-temperature organometallic epitaxy and its application to superlattice structures in thermoelectrics

Applied Physics Letters, 75(8), 1104–1106.

By: R. Venkatasubramanian, T. Colpitts, B. O'Quinn, S. Liu, N. El-Masry & M. Lamvik

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Optical absorption, Raman, and photoluminescence excitation spectroscopy of inhomogeneous InGaN films

MRS Internet Journal of Nitride Semiconductor Research, 4S1(G3.22).

By: L. Robins, A. Paul, C. Parker, J. Roberts, S. Bedair, E. Piner, N. El-Masry

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Optical band gap dependence on composition and thickness of InxGa1-xN (0 < x < 0.25) grown on GaN

Optical band gap dependence on composition and thickness of InxGa1-xN (0 < x < 0.25) grown on GaN. Applied Physics Letters, 75(17), 2566–2568.

By: C. Parker, J. Roberts, S. Bedair, M. Reed, S. Liu, N. El-Masry, L. Robins

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Phase separation and ordering coexisting in InxGa1-xN grown by metal organic chemical vapor deposition

Applied Physics Letters, 75(15), 2202–2204.

By: M. Behbehani, E. Piner, S. Liu, N. El-Masry & S. Bedair

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Scanning electron microscopy and cathodoluminescence study of the epitaxial lateral overgrowth (ELO) process for gallium nitride

Journal of Electronic Materials, 28(3), 295–300.

By: M. Johnson, Z. Yu, J. Brown, N. El-Masry, J. Cook & J. Schetzina

Source: NC State University Libraries
Added: August 6, 2018

1998 patent

Methods of forming indium gallium nitride or aluminum indium gallium nitride using controlled hydrogen gas flow

Washington, DC: U.S. Patent and Trademark Office.

By: F. McIntosh, S. Bedair, N. El-Masry & J. Roberts

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

Molecular beam epitaxy growth and properties of GaN, InGaN, and GaN/InGaN quantum well structures

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 16(3), 1282–1285.

By: M. Johnson, J. Brown, N. El-Masry, J. Cook, J. Schetzina, H. Kong, J. Edmond

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

Study of the epitaxial-lateral-overgrowth (ELO) process for GaN on sapphire

Journal of Crystal Growth, 195(1-4), 333–339.

By: Z. Yu, M. Johnson, J. Brown, N. El-Masry, J. Cook & J. Schetzina

Source: NC State University Libraries
Added: August 6, 2018

1997 journal article

Effect of hydrogen on the indium incorporation in ingan epitaxial films

Applied Physics Letters, 70(4), 461–463.

Source: NC State University Libraries
Added: August 6, 2018

1997 journal article

Epitaxial deposition of gainn and inn using the rotating susceptor ale system

Applied Surface Science, 112(1997 Mar.), 98–101.

By: F. McIntosh, E. Piner, J. Roberts, M. Behbehani, M. Aumer, N. El-Masry, S. Bedair

Source: NC State University Libraries
Added: August 6, 2018

1997 journal article

Growth and characterization of in-based nitride compounds

Journal of Crystal Growth, 178(1-2), 32–44.

Source: NC State University Libraries
Added: August 6, 2018

1997 journal article

Impurity dependence on hydrogen and ammonia flow rates in InGaN bulk films

Applied Physics Letters, 71(14), 2023–2025.

Source: NC State University Libraries
Added: August 6, 2018

1997 journal article

MBE Growth and properties of GaN on GaN/SiC substrates

Solid-State Electronics, 41(2), 213–218.

By: M. Johnson, S. Fujita, W. Rowland, K. Bowers, W. Hughes, Y. He, N. El-Masry, J. Cook ...

Source: NC State University Libraries
Added: August 6, 2018

1997 journal article

Mocvd of Bi2Te3, Sb2Te3 and their superlattice structures for thin-film thermoelectric applications

Journal of Crystal Growth, 170(1-4), 817–821.

By: R. Venkatasubramanian, T. Colpitts, E. Watko, M. Lamvik & N. El-Masry

Source: NC State University Libraries
Added: August 6, 2018

1997 patent

Stacked quantum well aluminum indium gallium nitride light emitting diodes

Washington, DC: U.S. Patent and Trademark Office.

By: F. McIntosh, S. Bedair, N. El-Masry & J. Roberts

Source: NC State University Libraries
Added: August 6, 2018

1992 journal article

Criterion for suppressing wafer bow in heterostructures by selective epitaxy

Materials Letters, 14(1), 58–62.

By: N. Elmasry, S. Hussien, A. Fahmy, N. Karam & S. Bedair

Source: NC State University Libraries
Added: August 6, 2018

1990 journal article

A criterion for the suppression of plastic-deformation in laser-assisted chemical vapor-deposition of GAAS

Journal of Applied Physics, 67(8), 3853–3857.

By: S. Hussien, A. Fahmy, N. Elmasry & S. Bedair

Source: NC State University Libraries
Added: August 6, 2018

1988 patent

Method of producing high performance permanent magnets

Washington, DC: U.S. Patent and Trademark Office.

By: H. Stadelmaier & N. El-Masry

Source: NC State University Libraries
Added: August 6, 2018

1985 patent

Method of producing high performance permanent magnets

Washington, DC: U.S. Patent and Trademark Office.

By: H. Stadelmaier & N. El-Masry

Source: NC State University Libraries
Added: August 6, 2018

conference paper

Strain relaxation in InxGa1-xN/GaN quantum well structures

Emara, A. M., Berkman, E. A., Zavada, J., El-Masry, N. A., & Bedair, S. M. Physica status solidi c: current topics in solid state physics, vol 8, no 7-8, 8(7-8).

By: A. Emara, E. Berkman, J. Zavada, N. El-Masry & S. Bedair

Source: NC State University Libraries
Added: August 6, 2018

patent

Transition metal doped ferromagnetic III-V nitride material films and methods of fabricating the same

ElMasry, N. A., Bedair, S. M., Reed, M. L., & Stadelmaier, H. Washington, DC: U.S. Patent and Trademark Office.

By: N. ElMasry, S. Bedair, M. Reed & H. Stadelmaier

Source: NC State University Libraries
Added: August 6, 2018