Works (67)

Updated: July 5th, 2023 16:04

2021 journal article

P-type InxGa1-xN semibulk templates (0.02 < x < 0.16) with room temperature hole concentration of mid-10(19) cm(-3) and device quality surface morphology

P-type InxGa1-xN semibulk templates (0.02 < x < 0.16) with room temperature hole concentration of mid-10(19) cm(-3) and device quality surface morphology. APPLIED PHYSICS LETTERS, 119(12).

By: E. Routh n, M. Abdelhamid n, P. Colter n, N. El-Masry n & S. Bedair n

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: February 21, 2022

2020 journal article

Device quality templates of InxGa1-xN (x < 0.1) with defect densities comparable to GaN

Device quality templates of InxGa1-xN (x < 0.1) with defect densities comparable to GaN. APPLIED PHYSICS LETTERS, 117(5).

By: E. Routh n, M. Abdelhamid n, N. El-Masry n & S. Bedair n

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: September 7, 2020

2020 journal article

Observing relaxation in device quality InGaN templates by TEM techniques

APPLIED PHYSICS LETTERS, 116(10).

By: T. Eldred n, M. Abdelhamid n, J. Reynolds n, N. El-Masry n, J. LeBeau n & S. Bedair n

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: April 6, 2020

2019 journal article

Growth and characterization of InxGa1-xN (0 < x < 0.16) templates for controlled emissions from MQW

Growth and characterization of InxGa1-xN (0 < x < 0.16) templates for controlled emissions from MQW. JOURNAL OF CRYSTAL GROWTH, 520, 18–26.

By: M. Abdelhamid n, J. Reynolds n, N. El-Masry n & S. Bedair n

co-author countries: United States of America 🇺🇸
author keywords: InGaN relaxation; Metal Organic Chemical Vapor Deposition (MOCVD); InGaN semibulk; Multiple quantum wells (MQWs); High resolution X-ray diffraction (HRXRD); Nitrides
Source: Web Of Science
Added: June 24, 2019

2018 journal article

Nature of electrical conduction in MoS2 films deposited by laser physical vapor deposition

Journal of Materials Science: Materials in Electronics, 29(16), 14180–14191.

By: K. Jagannadham n, K. Das n, C. Reynolds n & N. El-Masry n

co-author countries: United States of America 🇺🇸

Contributors: K. Jagannadham n, K. Das n, C. Reynolds n & N. El-Masry n

Sources: Crossref, ORCID
Added: April 23, 2019

2017 journal article

Electric field control of ferromagnetism at room temperature in GaCrN (p-i-n) device structures

Applied Physics Letters, 111(8), 082402.

By: N. El-Masry n, J. Zavada n, J. Reynolds n, C. Reynolds n, Z. Liu n & S. Bedair n

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, Crossref
Added: August 6, 2018

2015 journal article

Growth and Characterization of High-Quality, Relaxed In (y) Ga1-y N Templates for Optoelectronic Applications

JOURNAL OF ELECTRONIC MATERIALS, 44(11), 4161–4166.

By: D. Van Den Broeck n, D. Bharrat n, Z. Liu n, N. El-Masry n & S. Bedair n

co-author countries: United States of America 🇺🇸
author keywords: InGaN; metal organic chemical vapor deposition (MOCVD); relaxation; semibulk
Source: Web Of Science
Added: August 6, 2018

2014 journal article

Enhanced radiative recombination and suppressed Auger process in semipolar and nonpolar InGaN/GaN quantum wells grown over GaN nanowires

OPTICS LETTERS, 39(6), 1501–1504.

By: G. You*, J. Liu*, Z. Jiang*, L. Wang*, N. El-Masry n, A. Hosalli n, S. Bedair n, J. Xu*

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

2014 journal article

Strain-balanced InGaN/GaN multiple quantum wells

APPLIED PHYSICS LETTERS, 105(3).

By: D. Broeck n, D. Bharrat n, A. Hosalli n, N. El-Masry n & S. Bedair n

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

2013 journal article

Carrier Transport and Improved Collection in Thin-Barrier InGaAs/GaAsP Strained Quantum Well Solar Cells

IEEE JOURNAL OF PHOTOVOLTAICS, 3(1), 278–283.

By: G. Bradshaw n, C. Carlin n, J. Samberg n, N. El-Masry n, P. Colter n & S. Bedair n

co-author countries: United States of America 🇺🇸
author keywords: III-V multijunction solar cells; multiple quantum wells; thermionic emission; tunneling
Source: Web Of Science
Added: August 6, 2018

2013 journal article

Gallium nitride nanowires by maskless hot phosphoric wet etching

APPLIED PHYSICS LETTERS, 103(8).

By: D. Bharrat n, A. Hosalli n, D. Van Den Broeck n, J. Samberg n, S. Bedair n & N. El-Masry n

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

2013 journal article

Interface properties of Ga(As,P)/(In,Ga)As strained multiple quantum well structures

APPLIED PHYSICS LETTERS, 103(7).

By: J. Samberg n, H. Alipour n, G. Bradshaw n, C. Carlin n, P. Colter n, J. LeBeau n, N. El-Masry n, S. Bedair n

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

2013 journal article

Inversion by metalorganic chemical vapor deposition from N- to Ga-polar gallium nitride and its application to multiple quantum well light-emitting diodes

Applied Physics Letters, 103(23), 231108.

By: A. Hosalli n, D. Van Den Broeck n, D. Bharrat n, N. El-Masry n & S. Bedair n

co-author countries: United States of America 🇺🇸
Sources: Crossref, Web Of Science
Added: August 6, 2018

2013 journal article

Multifacet semipolar formation by controlling the groove depth via lateral sidewall epitaxy

JOURNAL OF CRYSTAL GROWTH, 367, 88–93.

By: P. Frajtag n, N. Nepal n, T. Paskova n, S. Bedair n & N. El-Masry n

co-author countries: United States of America 🇺🇸
author keywords: Crystal structure; Metalorganic vapor phase epitaxy; InGaN; Nitrides
Source: Web Of Science
Added: August 6, 2018

2013 conference paper

Tandem InGaP/GaAs-quantum well solar cells and their potential improvement through phosphorus carry-over management in multiple quantum well structures

2013 ieee 39th photovoltaic specialists conference (pvsc), 1737–1740.

By: J. Samberg n, G. Bradshaw n, C. Carlin n, P. Colter n, K. Edmondson, W. Hong, C. Fetzer, N. Karam, N. El-Masry n, S. Bedair n

co-author countries: United States of America 🇺🇸
Source: NC State University Libraries
Added: August 6, 2018

2012 article

Overgrowth of GaN on GaN nanowires produced by mask-less etching

Frajtag, P., Hosalli, A. M., Samberg, J. P., Colter, P. C., Paskova, T., El-Masry, N. A., & Bedair, S. M. (2012, August 1). JOURNAL OF CRYSTAL GROWTH, Vol. 352, pp. 203–208.

By: P. Frajtag n, A. Hosalli n, J. Samberg n, P. Colter n, T. Paskova n, N. El-Masry n, S. Bedair n

co-author countries: United States of America 🇺🇸
author keywords: Defects; Etching; GaN nanowires; X-ray diffraction; Lateral overgrowth; Nitrides
Source: Web Of Science
Added: August 6, 2018

2011 journal article

Embedded voids approach for low defect density in epitaxial GaN films

APPLIED PHYSICS LETTERS, 98(2).

By: P. Frajtag n, N. El-Masry n, N. Nepal n & S. Bedair n

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

2011 journal article

Embedded voids formation by overgrowth on GaN nanowires for high-quality GaN films

JOURNAL OF CRYSTAL GROWTH, 322(1), 27–32.

By: P. Frajtag n, J. Samberg n, N. El-Masry n, N. Nepal n & S. Bedair n

co-author countries: United States of America 🇺🇸
author keywords: Nanostructures; Line defects; Volume defects; Etching; Metalorganic chemical vapor deposition; Nitrides
Source: Web Of Science
Added: August 6, 2018

2011 journal article

Improved light-emitting diode performance by conformal overgrowth of multiple quantum wells and fully coalesced p-type GaN on GaN nanowires

Applied Physics Letters, 98(14), 143104.

By: P. Frajtag n, A. Hosalli n, G. Bradshaw n, N. Nepal n, N. El-Masry n & S. Bedair n

co-author countries: United States of America 🇺🇸
Source: Crossref
Added: February 24, 2020

2011 article

Light emitting diodes based on sidewall m-plane epitaxy of etched GaN/sapphire templates

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 7-8, Vol. 8.

By: N. Nepal n, P. Frajtag n, J. Zavada n, N. El-Masry n, S. Bedair n, C. Wetzel, A. Khan

co-author countries: United States of America 🇺🇸
author keywords: GaN; sidewall epitaxy; semi-polar plane; sidewall LEDs
Source: Web Of Science
Added: August 6, 2018

2011 journal article

Strain relaxation in InxGa1-xN/GaN quantum well structures

Physica Status Solidi (c), 8(7-8), 2034–2037.

By: A. Emar n, E. Berkman n, J. Zavada n, N. El-Masry n & S. Bedair n

co-author countries: China 🇨🇳 Egypt 🇪🇬 United States of America 🇺🇸
author keywords: InGaN; strain relaxation; GaN-LED
Source: Crossref
Added: February 24, 2020

2010 conference paper

Ferromagnetism and near infrared luminescence in neodymium and erbium doped gallium nitride via diffusion

Novel materials and devices for spintronics, 1183, 45–50.

By: M. Luen n, N. Nepal n, P. Frajtag n, J. Zavada n, E. Brown*, U. Hommerich*, S. Bedair n, N. El Masry n

co-author countries: United States of America 🇺🇸
Source: NC State University Libraries
Added: August 6, 2018

2009 journal article

Electric field control of room temperature ferromagnetism in III-N dilute magnetic semiconductor films

APPLIED PHYSICS LETTERS, 94(13).

By: N. Nepal n, M. Luen n, J. Zavada n, S. Bedair n, P. Frajtag n & N. El-Masry n

co-author countries: United States of America 🇺🇸
author keywords: ferromagnetic materials; gallium compounds; Hall effect; III-V semiconductors; magnetic multilayers; magnetic thin films; magnetisation; manganese compounds; paramagnetism; p-n heterojunctions; semiconductor growth; semiconductor thin films; semimagnetic semiconductors; wide band gap semiconductors
Source: Web Of Science
Added: August 6, 2018

2008 journal article

Nearly lattice-matched n, i, and p layers for InGaN p-i-n photodiodes in the 365-500 nm spectral range

APPLIED PHYSICS LETTERS, 92(10).

By: E. Berkman n, N. El-Masry n, A. Emara n & S. Bedair n

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

2008 journal article

Thermal conductivity of semi-insulating, p-type, and n-type GaN films on sapphire

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 26(3), 375–379.

By: K. Jagannadham n, E. Berkman n & N. Elmasry n

co-author countries: United States of America 🇺🇸

Contributors: K. Jagannadham n, E. Berkman n & N. Elmasry n

Sources: Web Of Science, ORCID
Added: August 6, 2018

2007 journal article

Correlation between compositional fluctuation and magnetic properties of Tm-doped AlGaN alloys

APPLIED PHYSICS LETTERS, 91(22).

By: N. Nepal n, S. Bedair n, N. El-Masry n, D. Lee*, A. Steckl* & J. Zavada*

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

2007 journal article

Correlation between photoluminescence and magnetic properties of GaMnN films

APPLIED PHYSICS LETTERS, 91(24).

By: N. Nepal n, A. Mahros n, S. Bedair n, N. El-Masry n & J. Zavada*

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

2007 journal article

Development of green, yellow, and amber light emitting diodes using InGaN multiple quantum well structures

APPLIED PHYSICS LETTERS, 90(15).

By: P. Barletta n, E. Berkman n, B. Moody n, N. El-Masry n, A. Emara n, M. Reed n, S. Bedair n

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

2007 journal article

Magnetic and magnetotransport properties of (AlGaN/GaN): Mg/(GaMnN) heterostructures at room temperature

APPLIED PHYSICS LETTERS, 90(25).

By: A. Mahros n, M. Luen n, A. Emara n, S. Bedair n, E. Berkman n, N. El-Masry n, J. Zavada*

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

2005 journal article

Effect of doping on the magnetic properties of GaMnN: Fermi level engineering

APPLIED PHYSICS LETTERS, 86(10).

By: M. Reed n, F. Arkun n, E. Berkman n, N. Elmasry n, J. Zavada*, M. Luen n, M. Reed n, S. Bedair n

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

2005 journal article

Five-nanometer thick silicon on insulator layer

JOURNAL OF APPLIED PHYSICS, 98(10).

By: N. Elmasry n, M. Hunter n, A. ElNaggar n & S. Bedair n

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

2005 journal article

Magnetic properties of Mn-doped GaN andp-i-n junctions

Physica Status Solidi (c), 2(7), 2403–2406.

By: M. Reed n, M. Reed, M. Luen n, E. Berkman n, F. Arkun n, S. Bedair n, J. Zavada*, N. El-Masry n

co-author countries: United States of America 🇺🇸
Source: Crossref
Added: February 24, 2020

2004 journal article

Dependence of ferromagnetic properties on carrier transfer at GaMnN/GaN : Mg interface

APPLIED PHYSICS LETTERS, 85(17), 3809–3811.

By: F. Arkun n, M. Reed n, E. Berkman n, N. El-Masry n, J. Zavada*, M. Reed n, S. Bedair n

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

2004 article

Electrical characterization of B-10 doped diamond irradiated with low thermal neutron fluence

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, Vol. 22, pp. 1191–1194.

By: M. Reed n, M. Reed n, K. Jagannadham n, K. Verghese n, S. Bedair n, N. El-Masry n, J. Butler*

co-author countries: United States of America 🇺🇸

Contributors: M. Reed n, M. Reed n, K. Jagannadham n, K. Verghese n, S. Bedair n, N. El-Masry n, J. Butler*

Sources: Web Of Science, ORCID
Added: August 6, 2018

2002 journal article

Effect of H-2 on nitrogen incorporation in the metalorganic chemical vapor deposition of GaAs1-yNy (0 <= y <= 0.08)

APPLIED PHYSICS LETTERS, 80(14), 2475–2477.

By: B. Moody n, P. Barletta n, N. El-Masry n, J. Roberts n, M. Aumer n, S. LeBoeuf n, S. Bedair n

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

2001 journal article

Room temperature ferromagnetic properties of (Ga, Mn)N

APPLIED PHYSICS LETTERS, 79(21), 3473–3475.

By: M. Reed n, N. El-Masry n, H. Stadelmaier n, M. Ritums n, M. Reed n, C. Parker n, J. Roberts n, S. Bedair n

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

2001 journal article

Room temperature magnetic (Ga,Mn)N: a new material for spin electronic devices

MATERIALS LETTERS, 51(6), 500–503.

By: M. Reed n, M. Ritums n, H. Stadelmaier n, M. Reed n, C. Parker n, S. Bedair n, N. El-Masry n

co-author countries: United States of America 🇺🇸
author keywords: magnetic; semiconductors; Ga-Mn-N
Source: Web Of Science
Added: August 6, 2018

2001 journal article

Self-assembled AlInGaN quaternary superlattice structures

APPLIED PHYSICS LETTERS, 79(11), 1616–1618.

By: N. El-Masry n, M. Behbehani n, S. LeBoeuf n, M. Aumer n, J. Roberts n & S. Bedair n

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

2001 journal article

Ultraviolet raman study of A(1)(LO) and E-2 phonons in InxGa1-xN alloys

JOURNAL OF APPLIED PHYSICS, 89(1), 798–800.

By: D. Alexson n, L. Bergman n, R. Nemanich n, M. Dutta*, M. Stroscio*, C. Parker n, S. Bedair n, N. El-Masry n, F. Adar

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

2000 journal article

Critical layer thickness determination of GaN/InGaN/GaN double heterostructures

Applied Physics Letters, 77(25), 4121–4123.

By: M. Reed n, N. El-Masry n, C. Parker n, J. Roberts n & S. Bedair n

co-author countries: United States of America 🇺🇸
Source: NC State University Libraries
Added: August 6, 2018

2000 journal article

Epitaxial Y2O3 films grown on Si(111) by pulsed-laser ablation

APPLIED PHYSICS LETTERS, 76(14), 1935–1937.

By: M. Hunter n, M. Reed n, N. El-Masry n, J. Roberts n & S. Bedair n

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

2000 journal article

Mn-prelayer effects on the epitaxial growth of MnSb on (111)B GaAs by pulsed laser deposition

MATERIALS LETTERS, 42(1-2), 121–129.

By: S. Liu n, S. Bedair n & N. El-Masry n

co-author countries: United States of America 🇺🇸
author keywords: MnSb; ferromagnetic thin films; GaAs substrate; Mn-prelayer; pulsed laser deposition
Source: Web Of Science
Added: August 6, 2018

2000 journal article

The planar Hall effect in MnSb films and MnSb-based multilayer structures grown on (111)B GaAs

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 218(2-3), 177–181.

By: M. Reed n, S. Liu n, J. Roberts n, H. Stadelmaier n, S. Bedair n & N. El-Masry n

co-author countries: United States of America 🇺🇸
author keywords: MnSb; multilayers; planar Hall effect; GaAs; ferromagnetic
Source: Web Of Science
Added: August 6, 2018

1999 journal article

A critical comparison between MOVPE and MBE growth of III-V nitride semiconductor materials for opto-electronic device applications

MRS Internet Journal of Nitride Semiconductor Research, 4S1(G5.10).

By: M. Johnson n, Z. Yu n, J. Brown n, F. Koeck n, N. El-Masry n, H. Kong*, J. Edmond*, J. Cook n, J. Schetzina n

co-author countries: United States of America 🇺🇸
Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Determination of the critical layer thickness in the InGaN/GaN heterostructures

APPLIED PHYSICS LETTERS, 75(18), 2776–2778.

By: C. Parker n, J. Roberts n, S. Bedair n, M. Reed n, S. Liu n & N. El-Masry n

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

1999 journal article

Epitaxial lateral overgrowth of GaN on SiC and sapphire substrates

MRS Internet Journal of Nitride Semiconductor Research, 4S1(G4.3).

By: Z. Yu n, M. Johnson n, J. Brown n, N. El-Masry n, J. Muth n, J. Cook n, J. Schetzina n, K. Haberern*, H. Kong*, J. Edmond*

co-author countries: United States of America 🇺🇸
Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Low-temperature organometallic epitaxy and its application to superlattice structures in thermoelectrics

APPLIED PHYSICS LETTERS, 75(8), 1104–1106.

By: R. Venkatasubramanian*, T. Colpitts*, . B O'Quinn, S. Liu n, N. El-Masry n & M. Lamvik*

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

1999 journal article

Optical absorption, Raman, and photoluminescence excitation spectroscopy of inhomogeneous InGaN films

MRS Internet Journal of Nitride Semiconductor Research, 4S1(G3.22).

By: L. Robins*, A. Paul*, C. Parker n, J. Roberts n, S. Bedair n, E. Piner n, N. El-Masry n

co-author countries: United States of America 🇺🇸
Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Optical band gap dependence on composition and thickness of InxGa1-xN (0 < x < 0.25) grown on GaN

Optical band gap dependence on composition and thickness of InxGa1-xN (0 < x < 0.25) grown on GaN. APPLIED PHYSICS LETTERS, 75(17), 2566–2568.

By: C. Parker n, J. Roberts n, S. Bedair n, M. Reed n, S. Liu n, N. El-Masry n, L. Robins*

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

1999 journal article

Phase separation and ordering coexisting in InxGa1-xN grown by metal organic chemical vapor deposition

APPLIED PHYSICS LETTERS, 75(15), 2202–2204.

By: M. Behbehani n, E. Piner n, S. Liu n, N. El-Masry n & S. Bedair n

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

1999 article

Scanning electron microscopy and cathodoluminescence study of the epitaxial lateral overgrowth (ELO) process for gallium nitride

Johnson, M. A. L., Yu, Z. H., Brown, J. D., El-Masry, N. A., Cook, J. W., & Schetzina, J. F. (1999, March). JOURNAL OF ELECTRONIC MATERIALS, Vol. 28, pp. 295–300.

By: M. Johnson n, Z. Yu n, J. Brown n, N. El-Masry, J. Cook n & J. Schetzina n

co-author countries: United States of America 🇺🇸
author keywords: cathodoluminescence (CL); epitaxial lateral overgrowth (ELO); GaN; metalorganic vapor phase epitaxy (MOVPE)
Source: Web Of Science
Added: August 6, 2018

1998 patent

Methods of forming indium gallium nitride or aluminum indium gallium nitride using controlled hydrogen gas flow

Washington, DC: U.S. Patent and Trademark Office.

By: F. McIntosh, S. Bedair, N. El-Masry & J. Roberts

Source: NC State University Libraries
Added: August 6, 2018

1998 article

Molecular beam epitaxy growth and properties of GaN, InGaN, and GaN/InGaN quantum well structures

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol. 16, pp. 1282–1285.

By: M. Johnson, J. Brown, N. El-Masry, J. Cook, J. Schetzina, H. Kong, J. Edmond

Source: Web Of Science
Added: August 6, 2018

1998 article

Study of the epitaxial-lateral-overgrowth (ELO) process for GaN on sapphire

Yu, Z. H., Johnson, M. A. L., Brown, J. D., El-Masry, N. A., Cook, J. W., & Schetzina, J. F. (1998, December). JOURNAL OF CRYSTAL GROWTH, Vol. 195, pp. 333–339.

By: Z. Yu n, M. Johnson n, J. Brown n, N. El-Masry n, J. Cook n & J. Schetzina n

co-author countries: United States of America 🇺🇸
author keywords: gallium nitride; MOVPE; epitaxial lateral overgrowth
Source: Web Of Science
Added: August 6, 2018

1997 journal article

Effect of hydrogen on the indium incorporation in InGaN epitaxial films

APPLIED PHYSICS LETTERS, 70(4), 461–463.

By: E. Piner n, M. Behbehani n, N. ElMasry n, F. McIntosh n, J. Roberts n, K. Boutros n, S. Bedair n

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

1997 article

Epitaxial deposition of GaInN and InN using the rotating susceptor ALE system

McIntosh, F. G., Piner, E. L., Roberts, J. C., Behbehani, M. K., Aumer, M. E., ElMasry, N. A., & Bedair, S. M. (1997, March). APPLIED SURFACE SCIENCE, Vol. 112, pp. 98–101.

By: F. McIntosh*, E. Piner, J. Roberts*, M. Behbehani*, M. Aumer*, N. ElMasry, S. Bedair*

Source: Web Of Science
Added: August 6, 2018

1997 journal article

Growth and characterization of In-based nitride compounds

JOURNAL OF CRYSTAL GROWTH, 178(1-2), 32–44.

By: S. Bedair n, F. McIntosh n, J. Roberts n, E. Piner n, K. Boutros* & N. ElMasry n

co-author countries: United States of America 🇺🇸
author keywords: InGaN; ALE; MOCVD; quantum wells; growth model
Source: Web Of Science
Added: August 6, 2018

1997 journal article

Impurity dependence on hydrogen and ammonia flow rates in InGaN bulk films

APPLIED PHYSICS LETTERS, 71(14), 2023–2025.

By: E. Piner n, M. Behbehani n, N. ElMasry n, J. Roberts n, F. McIntosh n & S. Bedair n

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

1997 article

MBE growth and properties of GaN on GaN/SiC substrates

Johnson, M. A. L., Fujita, S., Rowland, W. H., Bowers, K. A., Hughes, W. C., He, Y. W., … Edmond, J. A. (1997, February). SOLID-STATE ELECTRONICS, Vol. 41, pp. 213–218.

By: M. Johnson n, S. Fujita n, W. Rowland n, K. Bowers n, W. Hughes n, Y. He n, N. ElMasry n, J. Cook n ...

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

1997 article

MOCVD of Bi2Te3, Sb2Te3 and their superlattice structures for thin-film thermoelectric applications

Venkatasubramanian, R., Colpitts, T., Watko, E., Lamvik, M., & ElMasry, N. (1997, January). JOURNAL OF CRYSTAL GROWTH, Vol. 170, pp. 817–821.

By: R. Venkatasubramanian*, T. Colpitts*, E. Watko*, M. Lamvik* & N. ElMasry n

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

1997 patent

Stacked quantum well aluminum indium gallium nitride light emitting diodes

Washington, DC: U.S. Patent and Trademark Office.

By: F. McIntosh, S. Bedair, N. El-Masry & J. Roberts

Source: NC State University Libraries
Added: August 6, 2018

1992 journal article

CRITERION FOR SUPPRESSING WAFER BOW IN HETEROSTRUCTURES BY SELECTIVE EPITAXY

MATERIALS LETTERS, 14(1), 58–62.

By: N. Elmasry, S. Hussien, A. Fahmy*, N. Karam & S. Bedair*

Source: Web Of Science
Added: August 6, 2018

1990 journal article

A CRITERION FOR THE SUPPRESSION OF PLASTIC-DEFORMATION IN LASER-ASSISTED CHEMICAL VAPOR-DEPOSITION OF GAAS

JOURNAL OF APPLIED PHYSICS, 67(8), 3853–3857.

By: S. Hussien n, A. Fahmy n, N. Elmasry n & S. Bedair n

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

1988 patent

Method of producing high performance permanent magnets

Washington, DC: U.S. Patent and Trademark Office.

By: H. Stadelmaier & N. El-Masry

Source: NC State University Libraries
Added: August 6, 2018

1985 patent

Method of producing high performance permanent magnets

Washington, DC: U.S. Patent and Trademark Office.

By: H. Stadelmaier & N. El-Masry

Source: NC State University Libraries
Added: August 6, 2018

conference paper

Strain relaxation in InxGa1-xN/GaN quantum well structures

Emara, A. M., Berkman, E. A., Zavada, J., El-Masry, N. A., & Bedair, S. M. Physica status solidi c: current topics in solid state physics, vol 8, no 7-8, 8(7-8).

By: A. Emara, E. Berkman, J. Zavada, N. El-Masry & S. Bedair

Source: NC State University Libraries
Added: August 6, 2018

patent

Transition metal doped ferromagnetic III-V nitride material films and methods of fabricating the same

ElMasry, N. A., Bedair, S. M., Reed, M. L., & Stadelmaier, H. Washington, DC: U.S. Patent and Trademark Office.

By: N. ElMasry, S. Bedair, M. Reed & H. Stadelmaier

Source: NC State University Libraries
Added: August 6, 2018

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