Nadia A El-Masry

P-type InxGa1-xN semibulk templates (0.02 < x < 0.16) with room temperature hole concentration of mid-10(19) cm(-3) and device quality surface morphology

P-type InxGa1-xN semibulk templates (0.02 < x < 0.16) with room temperature hole concentration of mid-10(19) cm(-3) and device quality surface morphology. APPLIED PHYSICS LETTERS, 119(12).

Device quality templates of InxGa1-xN (x < 0.1) with defect densities comparable to GaN

Device quality templates of InxGa1-xN (x < 0.1) with defect densities comparable to GaN. APPLIED PHYSICS LETTERS, 117(5).

Observing relaxation in device quality InGaN templates by TEM techniques

APPLIED PHYSICS LETTERS, 116(10).

Growth and characterization of InxGa1-xN (0 < x < 0.16) templates for controlled emissions from MQW

Growth and characterization of InxGa1-xN (0 < x < 0.16) templates for controlled emissions from MQW. JOURNAL OF CRYSTAL GROWTH, 520, 18–26.

Nature of electrical conduction in MoS2 films deposited by laser physical vapor deposition

Journal of Materials Science: Materials in Electronics, 29(16), 14180–14191.

Electric field control of ferromagnetism at room temperature in GaCrN (p-i-n) device structures

Applied Physics Letters, 111(8), 082402.

Growth and Characterization of High-Quality, Relaxed In (y) Ga1-y N Templates for Optoelectronic Applications

JOURNAL OF ELECTRONIC MATERIALS, 44(11), 4161–4166.

Enhanced radiative recombination and suppressed Auger process in semipolar and nonpolar InGaN/GaN quantum wells grown over GaN nanowires

OPTICS LETTERS, 39(6), 1501–1504.

Strain-balanced InGaN/GaN multiple quantum wells

APPLIED PHYSICS LETTERS, 105(3).

Gallium nitride nanowires by maskless hot phosphoric wet etching

APPLIED PHYSICS LETTERS, 103(8).

Interface properties of Ga(As,P)/(In,Ga)As strained multiple quantum well structures

APPLIED PHYSICS LETTERS, 103(7).

Inversion by metalorganic chemical vapor deposition from N- to Ga-polar gallium nitride and its application to multiple quantum well light-emitting diodes

Applied Physics Letters, 103(23), 231108.

Multifacet semipolar formation by controlling the groove depth via lateral sidewall epitaxy

JOURNAL OF CRYSTAL GROWTH, 367, 88–93.

Tandem InGaP/GaAs-quantum well solar cells and their potential improvement through phosphorus carry-over management in multiple quantum well structures

2013 ieee 39th photovoltaic specialists conference (pvsc), 1737–1740.

Carrier Transport and Improved Collection in Thin-Barrier InGaAs/GaAsP Strained Quantum Well Solar Cells

IEEE JOURNAL OF PHOTOVOLTAICS, 3(1), 278–283.

Embedded voids approach for low defect density in epitaxial GaN films

APPLIED PHYSICS LETTERS, 98(2).

Embedded voids formation by overgrowth on GaN nanowires for high-quality GaN films

JOURNAL OF CRYSTAL GROWTH, 322(1), 27–32.

Improved light-emitting diode performance by conformal overgrowth of multiple quantum wells and fully coalesced p-type GaN on GaN nanowires

Applied Physics Letters, 98(14), 143104.

Light emitting diodes based on sidewall m-plane epitaxy of etched GaN/sapphire templates

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 7-8, Vol. 8.

Overgrowth of GaN on GaN nanowires produced by mask-less etching

Frajtag, P., Hosalli, A. M., Samberg, J. P., Colter, P. C., Paskova, T., El-Masry, N. A., & Bedair, S. M. (2012, August 1). JOURNAL OF CRYSTAL GROWTH, Vol. 352, pp. 203–208.

Strain relaxation in InxGa1-xN/GaN quantum well structures

Physica Status Solidi (c), 8(7-8), 2034–2037.

Electric field control of room temperature ferromagnetism in III-N dilute magnetic semiconductor films

APPLIED PHYSICS LETTERS, 94(13).

Ferromagnetism and near infrared luminescence in neodymium and erbium doped gallium nitride via diffusion

Novel materials and devices for spintronics, 1183, 45–50.

Nearly lattice-matched n, i, and p layers for InGaN p-i-n photodiodes in the 365-500 nm spectral range

APPLIED PHYSICS LETTERS, 92(10).

Thermal conductivity of semi-insulating, p-type, and n-type GaN films on sapphire

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 26(3), 375–379.

Correlation between compositional fluctuation and magnetic properties of Tm-doped AlGaN alloys

APPLIED PHYSICS LETTERS, 91(22).

Correlation between photoluminescence and magnetic properties of GaMnN films

APPLIED PHYSICS LETTERS, 91(24).

Development of green, yellow, and amber light emitting diodes using InGaN multiple quantum well structures

APPLIED PHYSICS LETTERS, 90(15).

Magnetic and magnetotransport properties of (AlGaN/GaN): Mg/(GaMnN) heterostructures at room temperature

APPLIED PHYSICS LETTERS, 90(25).

Effect of doping on the magnetic properties of GaMnN: Fermi level engineering

APPLIED PHYSICS LETTERS, 86(10).

Five-nanometer thick silicon on insulator layer

JOURNAL OF APPLIED PHYSICS, 98(10).

Magnetic properties of Mn-doped GaN andp-i-n junctions

Physica Status Solidi (c), 2(7), 2403–2406.

Dependence of ferromagnetic properties on carrier transfer at GaMnN/GaN : Mg interface

APPLIED PHYSICS LETTERS, 85(17), 3809–3811.

Electrical characterization of B-10 doped diamond irradiated with low thermal neutron fluence

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, Vol. 22, pp. 1191–1194.

Effect of H-2 on nitrogen incorporation in the metalorganic chemical vapor deposition of GaAs1-yNy (0 <= y <= 0.08)

APPLIED PHYSICS LETTERS, 80(14), 2475–2477.

Room temperature ferromagnetic properties of (Ga, Mn)N

APPLIED PHYSICS LETTERS, 79(21), 3473–3475.

Room temperature magnetic (Ga,Mn)N: a new material for spin electronic devices

MATERIALS LETTERS, 51(6), 500–503.

Self-assembled AlInGaN quaternary superlattice structures

APPLIED PHYSICS LETTERS, 79(11), 1616–1618.

Ultraviolet raman study of A(1)(LO) and E-2 phonons in InxGa1-xN alloys

JOURNAL OF APPLIED PHYSICS, 89(1), 798–800.

Critical layer thickness determination of GaN/InGaN/GaN double heterostructures

Applied Physics Letters, 77(25), 4121–4123.

Epitaxial Y2O3 films grown on Si(111) by pulsed-laser ablation

APPLIED PHYSICS LETTERS, 76(14), 1935–1937.

Mn-prelayer effects on the epitaxial growth of MnSb on (111)B GaAs by pulsed laser deposition

MATERIALS LETTERS, 42(1-2), 121–129.

The planar Hall effect in MnSb films and MnSb-based multilayer structures grown on (111)B GaAs

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 218(2-3), 177–181.

A critical comparison between MOVPE and MBE growth of III-V nitride semiconductor materials for opto-electronic device applications

MRS Internet Journal of Nitride Semiconductor Research, 4S1(G5.10).

Determination of the critical layer thickness in the InGaN/GaN heterostructures

APPLIED PHYSICS LETTERS, 75(18), 2776–2778.

Epitaxial lateral overgrowth of GaN on SiC and sapphire substrates

MRS Internet Journal of Nitride Semiconductor Research, 4S1(G4.3).

Low-temperature organometallic epitaxy and its application to superlattice structures in thermoelectrics

APPLIED PHYSICS LETTERS, 75(8), 1104–1106.

Optical absorption, Raman, and photoluminescence excitation spectroscopy of inhomogeneous InGaN films

MRS Internet Journal of Nitride Semiconductor Research, 4S1(G3.22).

Optical band gap dependence on composition and thickness of InxGa1-xN (0 < x < 0.25) grown on GaN

Optical band gap dependence on composition and thickness of InxGa1-xN (0 < x < 0.25) grown on GaN. APPLIED PHYSICS LETTERS, 75(17), 2566–2568.

Phase separation and ordering coexisting in InxGa1-xN grown by metal organic chemical vapor deposition

APPLIED PHYSICS LETTERS, 75(15), 2202–2204.

Scanning electron microscopy and cathodoluminescence study of the epitaxial lateral overgrowth (ELO) process for gallium nitride

Johnson, M. A. L., Yu, Z. H., Brown, J. D., El-Masry, N. A., Cook, J. W., & Schetzina, J. F. (1999, March). JOURNAL OF ELECTRONIC MATERIALS, Vol. 28, pp. 295–300.

Methods of forming indium gallium nitride or aluminum indium gallium nitride using controlled hydrogen gas flow

Washington, DC: U.S. Patent and Trademark Office.

Molecular beam epitaxy growth and properties of GaN, InGaN, and GaN/InGaN quantum well structures

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol. 16, pp. 1282–1285.

Study of the epitaxial-lateral-overgrowth (ELO) process for GaN on sapphire

Yu, Z. H., Johnson, M. A. L., Brown, J. D., El-Masry, N. A., Cook, J. W., & Schetzina, J. F. (1998, December). JOURNAL OF CRYSTAL GROWTH, Vol. 195, pp. 333–339.

Effect of hydrogen on the indium incorporation in InGaN epitaxial films

APPLIED PHYSICS LETTERS, 70(4), 461–463.

Epitaxial deposition of GaInN and InN using the rotating susceptor ALE system

McIntosh, F. G., Piner, E. L., Roberts, J. C., Behbehani, M. K., Aumer, M. E., ElMasry, N. A., & Bedair, S. M. (1997, March). APPLIED SURFACE SCIENCE, Vol. 112, pp. 98–101.

Growth and characterization of In-based nitride compounds

JOURNAL OF CRYSTAL GROWTH, 178(1-2), 32–44.

Impurity dependence on hydrogen and ammonia flow rates in InGaN bulk films

APPLIED PHYSICS LETTERS, 71(14), 2023–2025.

MBE growth and properties of GaN on GaN/SiC substrates

Johnson, M. A. L., Fujita, S., Rowland, W. H., Bowers, K. A., Hughes, W. C., He, Y. W., … Edmond, J. A. (1997, February). SOLID-STATE ELECTRONICS, Vol. 41, pp. 213–218.

MOCVD of Bi2Te3, Sb2Te3 and their superlattice structures for thin-film thermoelectric applications

Venkatasubramanian, R., Colpitts, T., Watko, E., Lamvik, M., & ElMasry, N. (1997, January). JOURNAL OF CRYSTAL GROWTH, Vol. 170, pp. 817–821.

Stacked quantum well aluminum indium gallium nitride light emitting diodes

Washington, DC: U.S. Patent and Trademark Office.

CRITERION FOR SUPPRESSING WAFER BOW IN HETEROSTRUCTURES BY SELECTIVE EPITAXY

MATERIALS LETTERS, 14(1), 58–62.

A CRITERION FOR THE SUPPRESSION OF PLASTIC-DEFORMATION IN LASER-ASSISTED CHEMICAL VAPOR-DEPOSITION OF GAAS

JOURNAL OF APPLIED PHYSICS, 67(8), 3853–3857.

Method of producing high performance permanent magnets

Washington, DC: U.S. Patent and Trademark Office.

Method of producing high performance permanent magnets

Washington, DC: U.S. Patent and Trademark Office.

Strain relaxation in InxGa1-xN/GaN quantum well structures

Emara, A. M., Berkman, E. A., Zavada, J., El-Masry, N. A., & Bedair, S. M. Physica status solidi c: current topics in solid state physics, vol 8, no 7-8, 8(7-8).

Transition metal doped ferromagnetic III-V nitride material films and methods of fabricating the same

ElMasry, N. A., Bedair, S. M., Reed, M. L., & Stadelmaier, H. Washington, DC: U.S. Patent and Trademark Office.