Nadia El-Masry

Routh, E. L., Abdelhamid, M., Colter, P., El-Masry, N. A., & Bedair, S. M. (2021). P-type InxGa1-xN semibulk templates (0.02 < x < 0.16) with room temperature hole concentration of mid-10(19) cm(-3) and device quality surface morphology. APPLIED PHYSICS LETTERS, 119(12). https://doi.org/10.1063/5.0065194

Routh, E. L., Abdelhamid, M., El-Masry, N. A., & Bedair, S. M. (2020). Device quality templates of InxGa1-xN (x < 0.1) with defect densities comparable to GaN. APPLIED PHYSICS LETTERS, 117(5). https://doi.org/10.1063/5.0015419

Eldred, T. B., Abdelhamid, M., Reynolds, J. G., El-Masry, N. A., LeBeau, J. M., & Bedair, S. M. (2020). Observing relaxation in device quality InGaN templates by TEM techniques. APPLIED PHYSICS LETTERS, 116(10). https://doi.org/10.1063/1.5139269

Abdelhamid, M., Reynolds, J. G., El-Masry, N. A., & Bedair, S. M. (2019). Growth and characterization of InxGa1-xN (0 < x < 0.16) templates for controlled emissions from MQW. JOURNAL OF CRYSTAL GROWTH, 520, 18–26. https://doi.org/10.1016/j.jcrysgro.2019.05.019

Jagannadham, K., Das, K., Reynolds, C. L., & El-Masry, N. (2018). Nature of electrical conduction in MoS2 films deposited by laser physical vapor deposition. Journal of Materials Science: Materials in Electronics, 29(16), 14180–14191. https://doi.org/10.1007/S10854-018-9551-9

El-Masry, N. A., Zavada, J. M., Reynolds, J. G., Reynolds, C. L., Jr., Liu, Z., & Bedair, S. M. (2017). Electric field control of ferromagnetism at room temperature in GaCrN (p-i-n) device structures. Applied Physics Letters, 111(8), 082402. https://doi.org/10.1063/1.4986431

Van Den Broeck, D. M., Bharrat, D., Liu, Z., El-Masry, N. A., & Bedair, S. M. (2015). Growth and Characterization of High-Quality, Relaxed In (y) Ga1-y N Templates for Optoelectronic Applications. JOURNAL OF ELECTRONIC MATERIALS, 44(11), 4161–4166. https://doi.org/10.1007/s11664-015-3989-9

You, G., Liu, J., Jiang, Z., Wang, L., El-Masry, N. A., Hosalli, A. M., … Xu, J. (2014). Enhanced radiative recombination and suppressed Auger process in semipolar and nonpolar InGaN/GaN quantum wells grown over GaN nanowires. OPTICS LETTERS, 39(6), 1501–1504. https://doi.org/10.1364/ol.39.001501

Broeck, D. M., Bharrat, D., Hosalli, A. M., El-Masry, N. A., & Bedair, S. M. (2014). Strain-balanced InGaN/GaN multiple quantum wells. APPLIED PHYSICS LETTERS, 105(3). https://doi.org/10.1063/1.4890738

Bradshaw, G. K., Carlin, C. Z., Samberg, J. P., El-Masry, N. A., Colter, P. C., & Bedair, S. M. (2013). Carrier Transport and Improved Collection in Thin-Barrier InGaAs/GaAsP Strained Quantum Well Solar Cells. IEEE JOURNAL OF PHOTOVOLTAICS, 3(1), 278–283. https://doi.org/10.1109/jphotov.2012.2216858

Bharrat, D., Hosalli, A. M., Van Den Broeck, D. M., Samberg, J. P., Bedair, S. M., & El-Masry, N. A. (2013). Gallium nitride nanowires by maskless hot phosphoric wet etching. APPLIED PHYSICS LETTERS, 103(8). https://doi.org/10.1063/1.4819272

Samberg, J. P., Alipour, H. M., Bradshaw, G. K., Carlin, C. Z., Colter, P. C., LeBeau, J. M., … Bedair, S. M. (2013). Interface properties of Ga(As,P)/(In,Ga)As strained multiple quantum well structures. APPLIED PHYSICS LETTERS, 103(7). https://doi.org/10.1063/1.4818548

Hosalli, A. M., Van Den Broeck, D. M., Bharrat, D., El-Masry, N. A., & Bedair, S. M. (2013). Inversion by metalorganic chemical vapor deposition from N- to Ga-polar gallium nitride and its application to multiple quantum well light-emitting diodes. Applied Physics Letters, 103(23), 231108. https://doi.org/10.1063/1.4841755

Frajtag, P., Nepal, N., Paskova, T., Bedair, S. M., & El-Masry, N. A. (2013). Multifacet semipolar formation by controlling the groove depth via lateral sidewall epitaxy. JOURNAL OF CRYSTAL GROWTH, 367, 88–93. https://doi.org/10.1016/j.jcrysgro.2012.12.039

Samberg, J. P., Bradshaw, G. K., Carlin, C. Z., Colter, P. C., Edmondson, K., Hong, W., … Bedair, S. M. (2013). Tandem InGaP/GaAs-quantum well solar cells and their potential improvement through phosphorus carry-over management in multiple quantum well structures. 2013 ieee 39th photovoltaic specialists conference (pvsc), 1737–1740. https://doi.org/10.1109/pvsc.2013.6744479

Frajtag, P., Hosalli, A. M., Samberg, J. P., Colter, P. C., Paskova, T., El-Masry, N. A., & Bedair, S. M. (2012, August 1). Overgrowth of GaN on GaN nanowires produced by mask-less etching. JOURNAL OF CRYSTAL GROWTH, Vol. 352, pp. 203–208. https://doi.org/10.1016/j.jcrysgro.2011.12.055

Frajtag, P., El-Masry, N. A., Nepal, N., & Bedair, S. M. (2011). Embedded voids approach for low defect density in epitaxial GaN films. APPLIED PHYSICS LETTERS, 98(2). https://doi.org/10.1063/1.3540680

Frajtag, P., Samberg, J. P., El-Masry, N. A., Nepal, N., & Bedair, S. M. (2011). Embedded voids formation by overgrowth on GaN nanowires for high-quality GaN films. JOURNAL OF CRYSTAL GROWTH, 322(1), 27–32. https://doi.org/10.1016/j.jcrysgro.2011.02.032

Frajtag, P., Hosalli, A. M., Bradshaw, G. K., Nepal, N., El-Masry, N. A., & Bedair, S. M. (2011). Improved light-emitting diode performance by conformal overgrowth of multiple quantum wells and fully coalesced p-type GaN on GaN nanowires. Applied Physics Letters, 98(14), 143104. https://doi.org/10.1063/1.3572032

Nepal, N., Frajtag, P., Zavada, J. M., El-Masry, N. A., Bedair, S. M., Wetzel, C., & Khan, A. (2011). Light emitting diodes based on sidewall m-plane epitaxy of etched GaN/sapphire templates. PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 7-8, Vol. 8. https://doi.org/10.1002/pssc.201000983

Emar, A. M., Berkman, E. A., Zavada, J., El-Masry, N. A., & Bedair, S. M. (2011). Strain relaxation in InxGa1-xN/GaN quantum well structures. Physica Status Solidi (c), 8(7-8), 2034–2037. https://doi.org/10.1002/pssc.201000984

Luen, M. O., Nepal, N., Frajtag, P., Zavada, J. M., Brown, E., Hommerich, U., … El Masry, N. A. (2010). Ferromagnetism and near infrared luminescence in neodymium and erbium doped gallium nitride via diffusion. Novel materials and devices for spintronics, 1183, 45–50. https://doi.org/10.1557/proc-1183-ff06-01

Nepal, N., Luen, M. O., Zavada, J. M., Bedair, S. M., Frajtag, P., & El-Masry, N. A. (2009). Electric field control of room temperature ferromagnetism in III-N dilute magnetic semiconductor films. APPLIED PHYSICS LETTERS, 94(13). https://doi.org/10.1063/1.3110963

Berkman, E. A., El-Masry, N. A., Emara, A., & Bedair, S. M. (2008). Nearly lattice-matched n, i, and p layers for InGaN p-i-n photodiodes in the 365-500 nm spectral range. APPLIED PHYSICS LETTERS, 92(10). https://doi.org/10.1063/1.2896648

Jagannadham, K., Berkman, E. A., & Elmasry, N. (2008). Thermal conductivity of semi-insulating, p-type, and n-type GaN films on sapphire. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 26(3), 375–379. https://doi.org/10.1116/1.2899379

Nepal, N., Bedair, S. M., El-Masry, N. A., Lee, D. S., Steckl, A. J., & Zavada, J. M. (2007). Correlation between compositional fluctuation and magnetic properties of Tm-doped AlGaN alloys. APPLIED PHYSICS LETTERS, 91(22). https://doi.org/10.1063/1.2817741

Nepal, N., Mahros, A. M., Bedair, S. M., El-Masry, N. A., & Zavada, J. M. (2007). Correlation between photoluminescence and magnetic properties of GaMnN films. APPLIED PHYSICS LETTERS, 91(24). https://doi.org/10.1063/1.2823602

Barletta, P. T., Berkman, E. A., Moody, B. F., El-Masry, N. A., Emara, A. M., Reed, M. J., & Bedair, S. M. (2007). Development of green, yellow, and amber light emitting diodes using InGaN multiple quantum well structures. APPLIED PHYSICS LETTERS, 90(15). https://doi.org/10.1063/1.2721133

Mahros, A. M., Luen, M. O., Emara, A., Bedair, S. M., Berkman, E. A., El-Masry, N. A., & Zavada, J. M. (2007). Magnetic and magnetotransport properties of (AlGaN/GaN): Mg/(GaMnN) heterostructures at room temperature. APPLIED PHYSICS LETTERS, 90(25). https://doi.org/10.1063/1.2749717

Reed, M. J., Arkun, F. E., Berkman, E. A., Elmasry, N. A., Zavada, J., Luen, M. O., … Bedair, S. M. (2005). Effect of doping on the magnetic properties of GaMnN: Fermi level engineering. APPLIED PHYSICS LETTERS, 86(10). https://doi.org/10.1063/1.1881786

Elmasry, N. A., Hunter, M., ElNaggar, A., & Bedair, S. M. (2005). Five-nanometer thick silicon on insulator layer. JOURNAL OF APPLIED PHYSICS, 98(10). https://doi.org/10.1063/1.1803625

Reed, M. L., Reed, M. J., Luen, M. O., Berkman, E. A., Arkun, F. E., Bedair, S. M., … El-Masry, N. A. (2005). Magnetic properties of Mn-doped GaN andp-i-n junctions. Physica Status Solidi (c), 2(7), 2403–2406. https://doi.org/10.1002/pssc.200461517

Arkun, F. E., Reed, M. J., Berkman, E. A., El-Masry, N. A., Zavada, J. M., Reed, M. L., & Bedair, S. M. (2004). Dependence of ferromagnetic properties on carrier transfer at GaMnN/GaN : Mg interface. APPLIED PHYSICS LETTERS, 85(17), 3809–3811. https://doi.org/10.1063/1.1810216

Reed, M. L., Reed, M. J., Jagannadham, K., Verghese, K., Bedair, S. M., El-Masry, N., & Butler, J. E. (2004). Electrical characterization of B-10 doped diamond irradiated with low thermal neutron fluence. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, Vol. 22, pp. 1191–1194. https://doi.org/10.1116/1.1763910

Moody, B. F., Barletta, P. T., El-Masry, N. A., Roberts, J. C., Aumer, M. E., LeBoeuf, S. F., & Bedair, S. M. (2002). Effect of H-2 on nitrogen incorporation in the metalorganic chemical vapor deposition of GaAs1-yNy (0 <= y <= 0.08). APPLIED PHYSICS LETTERS, 80(14), 2475–2477. https://doi.org/10.1063/1.1464225

Reed, M. L., El-Masry, N. A., Stadelmaier, H. H., Ritums, M. K., Reed, M. J., Parker, C. A., … Bedair, S. M. (2001). Room temperature ferromagnetic properties of (Ga, Mn)N. APPLIED PHYSICS LETTERS, 79(21), 3473–3475. https://doi.org/10.1063/1.1419231

Reed, M. L., Ritums, M. K., Stadelmaier, H. H., Reed, M. J., Parker, C. A., Bedair, S. M., & El-Masry, N. A. (2001). Room temperature magnetic (Ga,Mn)N: a new material for spin electronic devices. MATERIALS LETTERS, 51(6), 500–503. https://doi.org/10.1016/S0167-577X(01)00342-1

El-Masry, N. A., Behbehani, M. K., LeBoeuf, S. F., Aumer, M. E., Roberts, J. C., & Bedair, S. M. (2001). Self-assembled AlInGaN quaternary superlattice structures. APPLIED PHYSICS LETTERS, 79(11), 1616–1618. https://doi.org/10.1063/1.1400763

Alexson, D., Bergman, L., Nemanich, R. J., Dutta, M., Stroscio, M. A., Parker, C. A., … Adar, F. (2001). Ultraviolet raman study of A(1)(LO) and E-2 phonons in InxGa1-xN alloys. JOURNAL OF APPLIED PHYSICS, 89(1), 798–800. https://doi.org/10.1063/1.1330760

Reed, M. J., El-Masry, N. A., Parker, C. A., Roberts, J. C., & Bedair, S. M. (2000). Critical layer thickness determination of GaN/InGaN/GaN double heterostructures. Applied Physics Letters, 77(25), 4121–4123. https://doi.org/10.1063/1.1334361

Hunter, M. E., Reed, M. J., El-Masry, N. A., Roberts, J. C., & Bedair, S. M. (2000). Epitaxial Y2O3 films grown on Si(111) by pulsed-laser ablation. APPLIED PHYSICS LETTERS, 76(14), 1935–1937. https://doi.org/10.1063/1.126217

Liu, S. X., Bedair, S. M., & El-Masry, N. A. (2000). Mn-prelayer effects on the epitaxial growth of MnSb on (111)B GaAs by pulsed laser deposition. MATERIALS LETTERS, 42(1-2), 121–129. https://doi.org/10.1016/s0167-577x(99)00170-6

Reed, M. L., Liu, S. X., Roberts, J. C., Stadelmaier, H. H., Bedair, S. M., & El-Masry, N. A. (2000). The planar Hall effect in MnSb films and MnSb-based multilayer structures grown on (111)B GaAs. JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 218(2-3), 177–181. https://doi.org/10.1016/S0304-8853(00)00403-0

Johnson, M. A. L., Yu, Z. H., Brown, J. D., Koeck, F. A., El-Masry, N. A., Kong, H. S., … Schetzina, J. F. (1999). A critical comparison between MOVPE and MBE growth of III-V nitride semiconductor materials for opto-electronic device applications. MRS Internet Journal of Nitride Semiconductor Research, 4S1(G5.10). https://doi.org/10.1557/s1092578300003100

Parker, C. A., Roberts, J. C., Bedair, S. M., Reed, M. J., Liu, S. X., & El-Masry, N. A. (1999). Determination of the critical layer thickness in the InGaN/GaN heterostructures. APPLIED PHYSICS LETTERS, 75(18), 2776–2778. https://doi.org/10.1063/1.125146

Yu, Z. H., Johnson, M. A. L., Brown, J. D., El-Masry, N. A., Muth, J. F., Cook, J. W., … Edmond, J. S. (1999). Epitaxial lateral overgrowth of GaN on SiC and sapphire substrates. MRS Internet Journal of Nitride Semiconductor Research, 4S1(G4.3). https://doi.org/10.1557/s1092578300002878

Venkatasubramanian, R., Colpitts, T., B O'Quinn, Liu, S., El-Masry, N., & Lamvik, M. (1999). Low-temperature organometallic epitaxy and its application to superlattice structures in thermoelectrics. APPLIED PHYSICS LETTERS, 75(8), 1104–1106. https://doi.org/10.1063/1.124610

Robins, L. H., Paul, A. J., Parker, C. A., Roberts, J. C., Bedair, S. M., Piner, E. L., & El-Masry, N. A. (1999). Optical absorption, Raman, and photoluminescence excitation spectroscopy of inhomogeneous InGaN films. MRS Internet Journal of Nitride Semiconductor Research, 4S1(G3.22). https://doi.org/10.1557/s1092578300002490

Parker, C. A., Roberts, J. C., Bedair, S. M., Reed, M. J., Liu, S. X., El-Masry, N. A., & Robins, L. H. (1999). Optical band gap dependence on composition and thickness of InxGa1-xN (0 < x < 0.25) grown on GaN. APPLIED PHYSICS LETTERS, 75(17), 2566–2568. https://doi.org/10.1063/1.125079

Behbehani, M. K., Piner, E. L., Liu, S. X., El-Masry, N. A., & Bedair, S. M. (1999). Phase separation and ordering coexisting in InxGa1-xN grown by metal organic chemical vapor deposition. APPLIED PHYSICS LETTERS, 75(15), 2202–2204. https://doi.org/10.1063/1.124964

Johnson, M. A. L., Yu, Z. H., Brown, J. D., El-Masry, N. A., Cook, J. W., & Schetzina, J. F. (1999, March). Scanning electron microscopy and cathodoluminescence study of the epitaxial lateral overgrowth (ELO) process for gallium nitride. JOURNAL OF ELECTRONIC MATERIALS, Vol. 28, pp. 295–300. https://doi.org/10.1007/s11664-999-0030-1

McIntosh, F. G., Bedair, S. M., El-Masry, N. A., & Roberts, J. C. (1998). Methods of forming indium gallium nitride or aluminum indium gallium nitride using controlled hydrogen gas flow. Washington, DC: U.S. Patent and Trademark Office.

Johnson, M. A. L., Brown, J. D., El-Masry, N. A., Cook, J. W., Schetzina, J. F., Kong, H. S., & Edmond, J. A. (1998). Molecular beam epitaxy growth and properties of GaN, InGaN, and GaN/InGaN quantum well structures. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol. 16, pp. 1282–1285. https://doi.org/10.1116/1.590000

Yu, Z. H., Johnson, M. A. L., Brown, J. D., El-Masry, N. A., Cook, J. W., & Schetzina, J. F. (1998, December). Study of the epitaxial-lateral-overgrowth (ELO) process for GaN on sapphire. JOURNAL OF CRYSTAL GROWTH, Vol. 195, pp. 333–339. https://doi.org/10.1016/S0022-0248(98)00638-1

Piner, E. L., Behbehani, M. K., ElMasry, N. A., McIntosh, F. G., Roberts, J. C., Boutros, K. S., & Bedair, S. M. (1997). Effect of hydrogen on the indium incorporation in InGaN epitaxial films. APPLIED PHYSICS LETTERS, 70(4), 461–463. https://doi.org/10.1063/1.118181

McIntosh, F. G., Piner, E. L., Roberts, J. C., Behbehani, M. K., Aumer, M. E., ElMasry, N. A., & Bedair, S. M. (1997, March). Epitaxial deposition of GaInN and InN using the rotating susceptor ALE system. APPLIED SURFACE SCIENCE, Vol. 112, pp. 98–101. https://doi.org/10.1016/S0169-4332(96)00992-0

Bedair, S. M., McIntosh, F. G., Roberts, J. C., Piner, E. L., Boutros, K. S., & ElMasry, N. A. (1997). Growth and characterization of In-based nitride compounds. JOURNAL OF CRYSTAL GROWTH, 178(1-2), 32–44. https://doi.org/10.1016/S0022-0248(97)00069-9

Piner, E. L., Behbehani, M. K., ElMasry, N. A., Roberts, J. C., McIntosh, F. G., & Bedair, S. M. (1997). Impurity dependence on hydrogen and ammonia flow rates in InGaN bulk films. APPLIED PHYSICS LETTERS, 71(14), 2023–2025. https://doi.org/10.1063/1.119775

Johnson, M. A. L., Fujita, S., Rowland, W. H., Bowers, K. A., Hughes, W. C., He, Y. W., … Edmond, J. A. (1997, February). MBE growth and properties of GaN on GaN/SiC substrates. SOLID-STATE ELECTRONICS, Vol. 41, pp. 213–218. https://doi.org/10.1016/S0038-1101(96)00169-4

Venkatasubramanian, R., Colpitts, T., Watko, E., Lamvik, M., & ElMasry, N. (1997, January). MOCVD of Bi2Te3, Sb2Te3 and their superlattice structures for thin-film thermoelectric applications. JOURNAL OF CRYSTAL GROWTH, Vol. 170, pp. 817–821. https://doi.org/10.1016/S0022-0248(96)00656-2

McIntosh, F. G., Bedair, S. M., El-Masry, N. A., & Roberts, J. C. (1997). Stacked quantum well aluminum indium gallium nitride light emitting diodes. Washington, DC: U.S. Patent and Trademark Office.

ELMASRY, N. A., HUSSIEN, S. A., FAHMY, A. A., KARAM, N. H., & BEDAIR, S. M. (1992). CRITERION FOR SUPPRESSING WAFER BOW IN HETEROSTRUCTURES BY SELECTIVE EPITAXY. MATERIALS LETTERS, 14(1), 58–62. https://doi.org/10.1016/0167-577x(92)90105-s

HUSSIEN, S. A., FAHMY, A. A., ELMASRY, N. A., & BEDAIR, S. M. (1990). A CRITERION FOR THE SUPPRESSION OF PLASTIC-DEFORMATION IN LASER-ASSISTED CHEMICAL VAPOR-DEPOSITION OF GAAS. JOURNAL OF APPLIED PHYSICS, 67(8), 3853–3857. https://doi.org/10.1063/1.345033

Stadelmaier, H. H., & El-Masry, N. A. (1988). Method of producing high performance permanent magnets. Washington, DC: U.S. Patent and Trademark Office.

Stadelmaier, H. H., & El-Masry, N. A. (1985). Method of producing high performance permanent magnets. Washington, DC: U.S. Patent and Trademark Office.

Emara, A. M., Berkman, E. A., Zavada, J., El-Masry, N. A., & Bedair, S. M. Strain relaxation in InxGa1-xN/GaN quantum well structures. Physica status solidi c: current topics in solid state physics, vol 8, no 7-8, 8(7-8).

ElMasry, N. A., Bedair, S. M., Reed, M. L., & Stadelmaier, H. Transition metal doped ferromagnetic III-V nitride material films and methods of fabricating the same. Washington, DC: U.S. Patent and Trademark Office.