Works (4)
Updated: July 5th, 2023 15:45
2013 conference paper
An analytical investigation of the effect of varied buffer layer designs on the turn-off speed for 4H-SiC IGBTs
2013 1st IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA), 44–47.
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(OpenAlex)
Source: NC State University Libraries
Added: August 6, 2018
2012 journal article
A Comparative Study of Gate Structures for 9.4-kV4H-SiC Normally On Vertical JFETs
IEEE TRANSACTIONS ON ELECTRON DEVICES, 59(9), 2417–2423.
author keywords: High voltage; JFET; normally on; silicon carbide; 4H-SiC
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(Web of Science)
Source: Web Of Science
Added: August 6, 2018
2012 conference paper
Dual-GCT design criteria and voltage scaling
2012 IEEE Energy Conversion Congress and Exposition (ECCE), 2596–2603.
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(OpenAlex)
Source: NC State University Libraries
Added: August 6, 2018
2012 journal article
Orthogonal Positive-Bevel Termination for Chip-Size SiC Reverse Blocking Devices
IEEE ELECTRON DEVICE LETTERS, 33(11), 1592–1594.
author keywords: Edge termination; fault interruption device (FID); positive bevel; reverse blocking; symmetric blocking; 4H-SiC
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(Web of Science)
Source: Web Of Science
Added: August 6, 2018
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