Edward R. Van Brunt

An analytical investigation of the effect of varied buffer layer designs on the turn-off speed for 4H-SiC IGBTs

2013 1st IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA), 44–47.

A Comparative study of gate structures for 9.4-kV4H-SiC normally on vertical JFETs

IEEE Transactions on Electron Devices, 59(9), 2417–2423.

Dual-GCT design criteria and voltage scaling

2012 IEEE Energy Conversion Congress and Exposition (ECCE), 2596–2603.

Orthogonal positive-bevel termination for chip-size SiC reverse blocking devices

IEEE Electron Device Letters, 33(11), 1592–1594.