Edward R. Van Brunt

Works (4)

Updated: July 5th, 2023 15:45

2013 article

An analytical investigation of the effect of varied buffer layer designs on the turn-off speed for 4H-SiC IGBTs

Lee, M.-C., Huang, X., Huang, A., & Brunt, E. V. (2013, October 1).

By: M. Lee n, X. Huang n, A. Huang n & E. Brunt*

topics (OpenAlex): Silicon Carbide Semiconductor Technologies; Electromagnetic Compatibility and Noise Suppression; Multilevel Inverters and Converters
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7. Affordable and Clean Energy (OpenAlex)
Source: NC State University Libraries
Added: August 6, 2018

2012 article

A Comparative Study of Gate Structures for 9.4-kV 4H-SiC Normally On Vertical JFETs

Sung, W., Brunt, E. V., Baliga, B. J., & Huang, A. Q. (2012, August 3). IEEE Transactions on Electron Devices.

By: W. Sung n, E. Brunt n, B. Baliga n & A. Huang n

author keywords: High voltage; JFET; normally on; silicon carbide; 4H-SiC
topics (OpenAlex): Silicon Carbide Semiconductor Technologies; HVDC Systems and Fault Protection; Electromagnetic Compatibility and Noise Suppression
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Source: Web Of Science
Added: August 6, 2018

2012 article

Dual-GCT design criteria and voltage scaling

Brunt, E. V., Huang, A. Q., Butschen, T., & Doncker, R. W. D. (2012, September 1).

By: E. Brunt n, A. Huang n, T. Butschen* & R. Doncker *

topics (OpenAlex): Silicon Carbide Semiconductor Technologies; Advanced DC-DC Converters; HVDC Systems and Fault Protection
UN Sustainable Development Goals Color Wheel
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: NC State University Libraries
Added: August 6, 2018

2012 article

Orthogonal Positive-Bevel Termination for Chip-Size SiC Reverse Blocking Devices

Huang, X., Brunt, E. V., Baliga, B. J., & Huang, A. Q. (2012, October 11). IEEE Electron Device Letters.

By: X. Huang n, E. Brunt n, B. Baliga n & A. Huang n

author keywords: Edge termination; fault interruption device (FID); positive bevel; reverse blocking; symmetric blocking; 4H-SiC
topics (OpenAlex): Silicon Carbide Semiconductor Technologies; Electrostatic Discharge in Electronics; Electromagnetic Compatibility and Noise Suppression
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UN Sustainable Development Goal Categories
Source: Web Of Science
Added: August 6, 2018

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