Edward R. Van Brunt

Works (4)

Updated: July 5th, 2023 15:45

2013 conference paper

An analytical investigation of the effect of varied buffer layer designs on the turn-off speed for 4H-SiC IGBTs

2013 1st IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA), 44–47.

By: M. Lee n, X. Huang n, A. Huang n & E. Brunt*

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Source: NC State University Libraries
Added: August 6, 2018

2012 journal article

A Comparative Study of Gate Structures for 9.4-kV4H-SiC Normally On Vertical JFETs

IEEE TRANSACTIONS ON ELECTRON DEVICES, 59(9), 2417–2423.

By: W. Sung n, E. Van Brunt n, B. Baliga n & A. Huang n

author keywords: High voltage; JFET; normally on; silicon carbide; 4H-SiC
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Source: Web Of Science
Added: August 6, 2018

2012 conference paper

Dual-GCT design criteria and voltage scaling

2012 IEEE Energy Conversion Congress and Exposition (ECCE), 2596–2603.

By: E. Van Brunt n, A. Huang n, T. Butschen* & R. De Doncker *

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Source: NC State University Libraries
Added: August 6, 2018

2012 journal article

Orthogonal Positive-Bevel Termination for Chip-Size SiC Reverse Blocking Devices

IEEE ELECTRON DEVICE LETTERS, 33(11), 1592–1594.

By: X. Huang n, E. Van Brunt n, B. Baliga n & A. Huang n

author keywords: Edge termination; fault interruption device (FID); positive bevel; reverse blocking; symmetric blocking; 4H-SiC
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Source: Web Of Science
Added: August 6, 2018

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