@inproceedings{lee_huang_huang_brunt_2013, title={An analytical investigation of the effect of varied buffer layer designs on the turn-off speed for 4H-SiC IGBTs}, DOI={10.1109/wipda.2013.6695559}, booktitle={2013 1st IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA)}, author={Lee, M. C. and Huang, X. and Huang, A. and Brunt, E.}, year={2013}, pages={44–47} }
 @article{sung_van brunt_baliga_huang_2012, title={A Comparative study of gate structures for 9.4-kV4H-SiC normally on vertical JFETs}, volume={59}, DOI={10.1109/ted.2012.2203337}, number={9}, journal={IEEE Transactions on Electron Devices}, author={Sung, W. J. and Van Brunt, E. and Baliga, B. J. and Huang, A. Q.}, year={2012}, pages={2417–2423} }
 @inproceedings{van brunt_huang_butschen_de doncker_2012, title={Dual-GCT design criteria and voltage scaling}, DOI={10.1109/ecce.2012.6342394}, booktitle={2012 IEEE Energy Conversion Congress and Exposition (ECCE)}, author={Van Brunt, E. and Huang, A. Q. and Butschen, T. and De Doncker, R. W.}, year={2012}, pages={2596–2603} }
 @article{huang_van brunt_baliga_huang_2012, title={Orthogonal positive-bevel termination for chip-size SiC reverse blocking devices}, volume={33}, DOI={10.1109/led.2012.2215003}, number={11}, journal={IEEE Electron Device Letters}, author={Huang, X. and Van Brunt, E. and Baliga, B. J. and Huang, A. Q.}, year={2012}, pages={1592–1594} }