Edward R. Van Brunt

Lee, M. C., Huang, X., Huang, A., & Brunt, E. (2013). An analytical investigation of the effect of varied buffer layer designs on the turn-off speed for 4H-SiC IGBTs. 2013 1st IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA), 44–47. https://doi.org/10.1109/wipda.2013.6695559

Sung, W., Van Brunt, E., Baliga, B. J., & Huang, A. Q. (2012). A Comparative Study of Gate Structures for 9.4-kV4H-SiC Normally On Vertical JFETs. IEEE TRANSACTIONS ON ELECTRON DEVICES, 59(9), 2417–2423. https://doi.org/10.1109/ted.2012.2203337

Van Brunt, E., Huang, A. Q., Butschen, T., & De Doncker, R. W. (2012). Dual-GCT design criteria and voltage scaling. 2012 IEEE Energy Conversion Congress and Exposition (ECCE), 2596–2603. https://doi.org/10.1109/ecce.2012.6342394

Huang, X., Van Brunt, E., Baliga, B. J., & Huang, A. Q. (2012). Orthogonal Positive-Bevel Termination for Chip-Size SiC Reverse Blocking Devices. IEEE ELECTRON DEVICE LETTERS, 33(11), 1592–1594. https://doi.org/10.1109/led.2012.2215003