@article{sachet_aspnes_maria_franzen_2020, title={Critical Test of the Interaction of Surface Plasmon Resonances with Molecular Vibrational Transitions}, volume={124}, ISSN={["1520-5215"]}, DOI={10.1021/acs.jpca.9b10835}, abstractNote={We determine the infrared absorption spectra of a gas due to evanescent plasmonic electromagnetic fields in a system where surface interactions (physisorption and chemisorption) are demonstrably negligible. The plasmonic host material, the degenerate semiconductor CdO:Dy, has high mobility (366–450 cm2/(V s)) and carrier density ((0.6–3.5) × 1020 cm–3), and therefore supports low-loss surface plasmon resonances in the mid-IR. This high-mobility layer gives the highest resolution observed in a plasmonic conducting material in the infrared, higher than that of gold and rivaling that of silver. The high resolution permits a new understanding of the nature of the interaction of emerging fields with molecular transitions. Using different carrier concentrations, the resonance condition of the surface plasmon polariton (SPP) frequency (ωSPP) and N2O vibrational absorption spectral frequency (ωN2O) can be controlled, thereby allowing a critical test of field–molecule interactions. Experiment and theory both indicate a dispersive N2O line shape for ωSPP < ωN2O, an absorptive line shape for ωSPP < ωN2O, and an abrupt change between the two when the resonance condition ωSPP < ωN2O is reached. A first-order expansion of the Airy equation describes this behavior analytically. The SPP surface enhancement is 6.8 ± 0.5 on-resonance, lower than enhancements observed in other systems, but in agreement with recent quantitative reports of surface enhanced infrared reflection absorption spectroscopy (SEIRA). Our results show that interactions of infrared SPPs with molecular vibrations are in the weak coupling limit, and that enhancements comparable those reported for noble metals can be achieved.}, number={9}, journal={JOURNAL OF PHYSICAL CHEMISTRY A}, author={Sachet, Edward and Aspnes, D. E. and Maria, J-P and Franzen, Stefan}, year={2020}, month={Mar}, pages={1744–1753} }
 @article{kelley_runnerstrom_sachet_shelton_grimley_klump_lebeau_sitar_suen_padilla_et al._2019, title={Multiple Epsilon-Near-Zero Resonances in Multilayered Cadmium Oxide: Designing Metamaterial-Like Optical Properties in Monolithic Materials}, volume={6}, ISSN={["2330-4022"]}, DOI={10.1021/acsphotonics.9b00367}, abstractNote={In this Letter, we demonstrate a new class of infrared nanophotonic materials based on monolithic, multilayered doped cadmium oxide (CdO) thin films, where each CdO layer is individually tuned to s...}, number={5}, journal={ACS PHOTONICS}, author={Kelley, Kyle P. and Runnerstrom, Evan L. and Sachet, Edward and Shelton, Christopher T. and Grimley, Everett D. and Klump, Andrew and LeBeau, James M. and Sitar, Zlatko and Suen, Jonathan Y. and Padilla, Willie J. and et al.}, year={2019}, month={May}, pages={1139–1145} }
 @misc{khamh_sachet_kelly_maria_franzen_2018, title={As good as gold and better: conducting metal oxide materials for mid-infrared plasmonic applications}, volume={6}, ISSN={["2050-7534"]}, DOI={10.1039/c7tc05760a}, abstractNote={Review of material properties of conducting metal oxides that make them suitable for mid-infrared surface plasmon resonance applications.}, number={31}, journal={JOURNAL OF MATERIALS CHEMISTRY C}, author={Khamh, Hniang and Sachet, Edward and Kelly, Kyle and Maria, Jon-Paul and Franzen, Stefan}, year={2018}, month={Aug}, pages={8326–8342} }
 @article{grimley_wynn_kelley_sachet_dean_freeman_maria_lebeau_2018, title={Complexities of atomic structure at CdO/MgO and CdO/Al2O3 interfaces}, volume={124}, ISSN={["1089-7550"]}, DOI={10.1063/1.5053752}, abstractNote={We report the interface structures of CdO thin films on (001)-MgO and (0001)-Al2O3 substrates. Using aberration corrected scanning transmission electron microscopy, we show that epitaxial growth of (001)-CdO∥(001)-MgO occurs with a lattice misfit greater than 10%. A high density of interface misfit dislocations is found to form. In combination with molecular dynamics simulations, we show that dislocation strain fields form and overlap in very thin heterostructures of CdO and MgO (<3 nm). On the c-Al2O3 substrate, we find that CdO grows with a surface normal of [025]. We show that three rotation variants form due to the symmetry of the sapphire surface. These results contribute insights into the epitaxial growth of these rock-salt oxides.}, number={20}, journal={JOURNAL OF APPLIED PHYSICS}, author={Grimley, Everett D. and Wynn, Alex P. and Kelley, Kyle P. and Sachet, Edward and Dean, Julian S. and Freeman, Colin L. and Maria, Jon-Paul and LeBeau, James M.}, year={2018}, month={Nov} }
 @article{gaskins_kotsonis_giri_ju_rohskopf_wang_bai_sachet_shelton_liu_et al._2018, title={Thermal Boundary Conductance Across Heteroepitaxial ZnO/GaN Interfaces: Assessment of the Phonon Gas Model}, volume={18}, ISSN={["1530-6992"]}, DOI={10.1021/acs.nanolett.8b02837}, abstractNote={We present experimental measurements of the thermal boundary conductance (TBC) from 78-500 K across isolated heteroepitaxially grown ZnO films on GaN substrates. This data provides an assessment of the underlying assumptions driving phonon gas-based models, such as the diffuse mismatch model (DMM), and atomistic Green's function (AGF) formalisms used to predict TBC. Our measurements, when compared to previous experimental data, suggest that TBC can be influenced by long wavelength, zone center modes in a material on one side of the interface as opposed to the '"vibrational mismatch"' concept assumed in the DMM; this disagreement is pronounced at high temperatures. At room temperature, we measure the ZnO/GaN TBC as 490[+150,-110] MW m-2 K-1. The disagreement among the DMM and AGF, and the experimental data at elevated temperatures, suggests a non-negligible contribution from other types of modes that are not accounted for in the fundamental assumptions of these harmonic based formalisms, which may rely on anharmonicity. Given the high quality of these ZnO/GaN interfaces, these results provide an invaluable, critical, and quantitative assessment of the accuracy of assumptions in the current state of the art computational approaches used to predict phonon TBC across interfaces.}, number={12}, journal={NANO LETTERS}, author={Gaskins, John T. and Kotsonis, George and Giri, Ashutosh and Ju, Shenghong and Rohskopf, Andrew and Wang, Yekan and Bai, Tingyu and Sachet, Edward and Shelton, Christopher T. and Liu, Zeyu and et al.}, year={2018}, month={Dec}, pages={7469–7477} }
 @article{runnerstrom_kelley_sachet_shelton_maria_2017, title={Epsilon-near-Zero Modes and Surface Plasmon Resonance in Fluorine-Doped Cadmium Oxide Thin Films}, volume={4}, ISSN={["2330-4022"]}, DOI={10.1021/acsphotonics.7b00429}, abstractNote={In this report we demonstrate fluorine-doped CdO as a model infrared plasmonic material by virtue of its tunable carrier density, high mobility, and intense extreme-subwavelength plasmon–polariton coupling. Carrier concentrations ranging from 1019 to 1020 cm–3, with electron mobility values as high as 473 cm2/V·s, are readily achieved in epitaxial CdO films over a thickness range spanning 50 to 500 nm. Carrier concentration is achieved by reactive sputtering in an Ar/O2 atmosphere with trace quantities of CF4. Infrared reflectometry measurements demonstrate the possibility of near-perfect plasmonic absorption through the entire mid-IR spectral range. A companion set of reflectivity simulations are used to predict, understand, and optimize the epsilon-near-zero plasmonic modes. In the context of other transparent conductors, CdO exhibits substantially higher electron mobility values and thus sharp and tunable absorption features. This highlights the utility of high-mobility transparent conducting oxides as...}, number={8}, journal={ACS PHOTONICS}, author={Runnerstrom, Evan L. and Kelley, Kyle P. and Sachet, Edward and Shelton, Christopher T. and Maria, Jon-Paul}, year={2017}, month={Aug}, pages={1885–1892} }
 @article{yang_kelley_sachet_campione_luk_maria_sinclair_brener_2017, title={Femtosecond optical polarization switching using a cadmium oxide-based perfect absorber}, volume={11}, ISSN={1749-4885 1749-4893}, url={http://dx.doi.org/10.1038/NPHOTON.2017.64}, DOI={10.1038/nphoton.2017.64}, abstractNote={Ultrafast control of the polarization state of light may enable a plethora of applications in optics, chemistry and biology. However, conventional polarizing elements, such as polarizers and waveplates, are either static or possess only gigahertz switching speeds. Here, with the aid of high-mobility indium-doped cadmium oxide (CdO) as the gateway plasmonic material, we realize a high-quality factor Berreman-type perfect absorber at a wavelength of 2.08 μm. On sub-bandgap optical pumping, the perfect absorption resonance strongly redshifts because of the transient increase of the ensemble-averaged effective electron mass of CdO, which leads to an absolute change in the p-polarized reflectance from 1.0 to 86.3%. By combining the exceedingly high modulation depth with the polarization selectivity of the perfect absorber, we experimentally demonstrate a reflective polarizer with a polarization extinction ratio of 91 that can be switched on and off within 800 fs. Indium-doped cadmium oxide performs polarization switching on a subpicosecond timescale.}, number={6}, journal={Nature Photonics}, publisher={Springer Science and Business Media LLC}, author={Yang, Yuanmu and Kelley, Kyle and Sachet, Edward and Campione, Salvatore and Luk, Ting S. and Maria, Jon-Paul and Sinclair, Michael B. and Brener, Igal}, year={2017}, month={May}, pages={390–395} }
 @article{kelley_sachet_shelton_maria_2017, title={High mobility yttrium doped cadmium oxide thin films}, volume={5}, ISSN={["2166-532X"]}, DOI={10.1063/1.4993799}, abstractNote={Donor doped CdO thin films on c-plane sapphire are prepared by reactive co-sputtering from Cd-metal and Y-metal targets which are driven using pulsed-dc and RF power respectively. Intrinsic CdO exhibits a carrier density of 1.8 × 1019 cm−3 and a mobility of 330 cm2 V−1 s−1. By increasing the Y-flux, carrier density values can be increased smoothly and reproducibly to a maximum value of 3.3 × 1020 cm−3. Mobility increases with Y flux, and exhibits a broad plateau between approximately 5 × 1019 cm−3 and 2 × 1020 cm−3. Higher carrier concentrations produce a sharp drop in mobility. The increase in mobility is attributed to a reduction of intrinsic donors (i.e., oxygen vacancies) with increasing carrier density while the ultimate decrease in mobility results from a combination of factors including cadmium vacancies, reduced crystal quality, and smaller crystallite sizes, all of which accompany carrier density values greater than the mid 1020 cm−3 range. This work demonstrates that CdO thin films can be prepared by magnetron sputtering with transport properties and crystal quality that are comparable to those grown using molecular beam epitaxy.}, number={7}, journal={APL MATERIALS}, author={Kelley, Kyle P. and Sachet, Edward and Shelton, Christopher T. and Maria, Jon-Paul}, year={2017}, month={Jul} }
 @inproceedings{yang_kelly_sachet_campione_luk_maria_brener_2017, title={High-contrast, all-optical switching of infrared light using a cadmium oxide perfect absorber}, DOI={10.1364/cleo_qels.2017.fm2h.4}, abstractNote={We experimentally demonstrate high-contrast, ultrafast switching of infrared light at 2.1 μm via intraband pumping of a high quality factor perfect absorber made from a highly doped cadmium oxide thin film.}, booktitle={2017 conference on lasers and electro-optics (cleo)}, author={Yang, Y. M. and Kelly, K. and Sachet, E. and Campione, S. and Luk, T. S. and Maria, J. P. and Brener, I.}, year={2017} }
 @article{shelton_bryan_paisley_sachet_ihlefeld_lavrik_collazo_sitar_maria_2017, title={Step-free GaN surfaces grown by confined-area metal-organic vapor phase epitaxy}, volume={5}, ISSN={["2166-532X"]}, DOI={10.1063/1.4993840}, abstractNote={A two-step homoepitaxial growth process producing step-free surfaces on low dislocation density, Ga-polar ammonothermal GaN single crystals is described. Growth is conducted under very low supersaturation conditions where adatom incorporation occurs predominantly at step edges, and lateral growth is strongly preferred. The achievable step-free area is limited by the substrate dislocation density. For ammonothermal crystals with an average dislocation density of ∼1 × 104 cm−2, step-free mesas up to 200 × 200 μm2 in size are achieved. These remarkable surfaces create a unique opportunity to study the effect of steps on the properties and performance of semiconductor heterostructures.}, number={9}, journal={APL MATERIALS}, author={Shelton, Christopher T. and Bryan, Isaac and Paisley, Elizabeth A. and Sachet, Edward and Ihlefeld, Jon F. and Lavrik, Nick and Collazo, Ramon and Sitar, Zlatko and Maria, Jon-Paul}, year={2017}, month={Sep} }
 @article{donovan_sachet_maria_hopkins_2016, title={Interplay between mass-impurity and vacancy phonon scattering effects on the thermal conductivity of doped cadmium oxide}, volume={108}, ISSN={["1077-3118"]}, DOI={10.1063/1.4939652}, abstractNote={Understanding the impact and complex interaction of thermal carrier scattering centers in functional oxide systems is critical to their progress and application. In this work, we study the interplay among electron and phonon thermal transport, mass-impurity scattering, and phonon-vacancy interactions on the thermal conductivity of cadmium oxide. We use time domain thermoreflectance to measure the thermal conductivity of a set of CdO thin films doped with Dy up to the saturation limit. Using measurements at room temperature and 80 K, our results suggest that the enhancement in thermal conductivity at low Dy concentrations is dominated by an increase in the electron mobility due to a decrease in oxygen vacancy concentration. Furthermore, we find that at intermediate doping concentrations, the subsequent decrease in thermal conductivity can be ascribed to a large reduction in phononic thermal transport due to both point defect and cation-vacancy scattering. With these results, we gain insight into the complex dynamics driving phonon scattering and resulting thermal transport in functional oxides.}, number={2}, journal={APPLIED PHYSICS LETTERS}, author={Donovan, Brian F. and Sachet, Edward and Maria, Jon-Paul and Hopkins, Patrick E.}, year={2016}, month={Jan} }
 @article{stuart_gray_nevola_su_sachet_ulrich_dougherty_2016, title={Magnetoelectric oxide films for spin manipulation in graphene}, volume={10}, ISSN={["1862-6270"]}, DOI={10.1002/pssr.201510433}, abstractNote={The challenge of creating a graphene spin field effect transistor (spin-FET) demands a magnetic gate dielectric material whose magnetization can be switched electrically. We have grown films of Cr2O3 on top of graphite and graphene by pulsed laser deposition that shows this crucial functionality. We demonstrate that the Cr2O3 films are magnetoelectric by poling them in combined electric and magnetic fields and then using magnetic force microscopy to observe spontaneous surface domain structure as a function of poling field. In addition, we show that the electric field created by a conducting AFM tip can be used to write magnetic patterns in the film that demonstrate the kind of continuous magnetoelectric control needed for a prototype spin-FET. (© 2016 WILEY-VCH Verlag GmbH &Co. KGaA, Weinheim)}, number={3}, journal={PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS}, author={Stuart, S. C. and Gray, B. and Nevola, D. and Su, L. and Sachet, E. and Ulrich, M. and Dougherty, D. B.}, year={2016}, month={Mar}, pages={242–247} }
 @article{kang_losego_sachet_maria_franzen_2016, title={Near-Infrared Optical Extinction of Indium Tin Oxide Structures Prepared by Nanosphere Lithography}, volume={3}, ISSN={["2330-4022"]}, DOI={10.1021/acsphotonics.6b00649}, abstractNote={Indium tin oxide (ITO) has been the most widely studied conducting metal oxide and serves as the best candidate for proof-of-concept experiments in the field of surface plasmon resonance and studies of electric field confinement and manipulation. ITO is chemically stable and relatively easy to sputter. In this report, arrays of ITO nanostructures were produced using nanosphere lithography, which was originally developed for plasmonic applications involving noble metals. However, the experiments presented here show that patterned ITO with similar size and shape to noble metals has an observed extinction that corresponds to the epsilon-near-zero mode. The carrier density of ITO nanostructure can be controlled by the postdeposition annealing process. Thus, one can prove that the optical signals on the surface are those of the ITO nanostructure by reversible on/off switching of the capacitive plasmon resonance by annealing the surfaces successively in forming gas (N2/H2) and in air. Thus, using conducting metal oxides confident of the electric field is possible not only along the z-axis perpendicular to the thin film but within the plane of the film as well.}, number={10}, journal={ACS PHOTONICS}, author={Kang, Misun and Losego, Mark and Sachet, Edward and Maria, Jon-Paul and Franzen, Stefan}, year={2016}, month={Oct}, pages={1993–1999} }
 @article{losego_paisley_craft_lam_sachet_mita_collazo_sitar_maria_2016, title={Selective area epitaxy of magnesium oxide thin films on gallium nitride surfaces}, volume={31}, ISSN={["2044-5326"]}, DOI={10.1557/jmr.2015.332}, abstractNote={Abstract}, number={1}, journal={JOURNAL OF MATERIALS RESEARCH}, author={Losego, Mark D. and Paisley, Elizabeth A. and Craft, H. Spalding and Lam, Peter G. and Sachet, Edward and Mita, Seiji and Collazo, Ramon and Sitar, Zlatko and Maria, Jon-Paul}, year={2016}, month={Jan}, pages={36–45} }
 @article{sachet_shelton_harris_gaddy_irving_curtarolo_donovan_hopkins_sharma_sharma_et al._2015, title={Dysprosium-doped cadmium oxide as a gateway material for mid-infrared plasmonics}, volume={14}, ISSN={1476-1122 1476-4660}, url={http://dx.doi.org/10.1038/NMAT4203}, DOI={10.1038/nmat4203}, abstractNote={The interest in plasmonic technologies surrounds many emergent optoelectronic applications, such as plasmon lasers, transistors, sensors and information storage. Although plasmonic materials for ultraviolet-visible and near-infrared wavelengths have been found, the mid-infrared range remains a challenge to address: few known systems can achieve subwavelength optical confinement with low loss in this range. With a combination of experiments and ab initio modelling, here we demonstrate an extreme peak of electron mobility in Dy-doped CdO that is achieved through accurate 'defect equilibrium engineering'. In so doing, we create a tunable plasmon host that satisfies the criteria for mid-infrared spectrum plasmonics, and overcomes the losses seen in conventional plasmonic materials. In particular, extrinsic doping pins the CdO Fermi level above the conduction band minimum and it increases the formation energy of native oxygen vacancies, thus reducing their populations by several orders of magnitude. The substitutional lattice strain induced by Dy doping is sufficiently small, allowing mobility values around 500 cm(2) V(-1) s(-1) for carrier densities above 10(20) cm(-3). Our work shows that CdO:Dy is a model system for intrinsic and extrinsic manipulation of defects affecting electrical, optical and thermal properties, that oxide conductors are ideal candidates for plasmonic devices and that the defect engineering approach for property optimization is generally applicable to other conducting metal oxides.}, number={4}, journal={Nature Materials}, publisher={Springer Science and Business Media LLC}, author={Sachet, Edward and Shelton, Christopher T. and Harris, Joshua S. and Gaddy, Benjamin E. and Irving, Douglas L. and Curtarolo, Stefano and Donovan, Brian F. and Hopkins, Patrick E. and Sharma, Peter A. and Sharma, Ana Lima and et al.}, year={2015}, month={Feb}, pages={414–420} }
 @article{rost_sachet_borman_moballegh_dickey_hou_jones_curtarolo_maria_2015, title={Entropy-stabilized oxides}, volume={6}, journal={Nature Communications}, author={Rost, C. M. and Sachet, E. and Borman, T. and Moballegh, A. and Dickey, E. C. and Hou, D. and Jones, J. L. and Curtarolo, S. and Maria, J. P.}, year={2015} }
 @article{atanasov_losego_gong_sachet_maria_williams_parsons_2014, title={Highly Conductive and Conformal Poly(3,4-ethylenedioxythiophene) (PEDOT) Thin Films via Oxidative Molecular Layer Deposition}, volume={26}, ISSN={["1520-5002"]}, url={http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000337199400019&KeyUID=WOS:000337199400019}, DOI={10.1021/cm500825b}, abstractNote={This work introduces oxidative molecular layer deposition (oMLD) as a chemical route to synthesize highly conductive and conformal poly(3,4-ethylenedioxythiophene) (PEDOT) thin films via sequential vapor exposures of molybdenum(V) chloride (MoCl5, oxidant) and ethylene dioxythiophene (EDOT, monomer) precursors. The growth temperature strongly affects PEDOT’s crystalline structure and electronic conductivity. Films deposited at ∼150 °C exhibit a highly textured crystalline structure, with {010} planes aligned parallel with the substrate. Electrical conductivity of these textured films is routinely above 1000 S cm–1, with the most conductive films exceeding 3000 S cm–1. At lower temperatures (∼100 °C) the films exhibit a random polycrystalline structure and display smaller conductivities. Compared with typical electrochemical, solution-based, and chemical vapor deposition techniques, oMLD PEDOT films achieve high conductivity without the need for additives or postdeposition treatments. Moreover, the sequential-reaction synthesis method produces highly conformal coatings over high aspect ratio structures, making it attractive for many device applications.}, number={11}, journal={CHEMISTRY OF MATERIALS}, author={Atanasov, Sarah E. and Losego, Mark D. and Gong, Bo and Sachet, Edward and Maria, Jon-Paul and Williams, Philip S. and Parsons, Gregory N.}, year={2014}, month={Jun}, pages={3471–3478} }
 @article{shelton_sachet_paisley_hoffmann_rajan_collazo_sitar_maria_2014, title={Polarity characterization by anomalous x-ray dispersion of ZnO films and GaN lateral polar structures}, volume={115}, ISSN={["1089-7550"]}, DOI={10.1063/1.4863120}, abstractNote={We demonstrate the use of anomalous x-ray scattering of constituent cations at their absorption edge, in a conventional Bragg-Brentano diffractometer, to measure absolutely and quantitatively the polar orientation and polarity fraction of unipolar and mixed polar wurtzitic crystals. In one set of experiments, the gradual transition between c+ and c− polarity of epitaxial ZnO films on sapphire as a function of MgO buffer layer thickness is monitored quantitatively, while in a second experiment, we map the polarity of a lateral polar homojunction in GaN. The dispersion measurements are compared with piezoforce microscopy images, and we demonstrate how x-ray dispersion and scanning probe methods can provide complementary information that can discriminate between polarity fractions at a material surface and polarity fractions averaged over the film bulk.}, number={4}, journal={JOURNAL OF APPLIED PHYSICS}, author={Shelton, Christopher T. and Sachet, Edward and Paisley, Elizabeth A. and Hoffmann, Marc P. and Rajan, Joseph and Collazo, Ramon and Sitar, Zlatko and Maria, Jon-Paul}, year={2014}, month={Jan} }
 @article{kirste_hoffmann_sachet_bobea_bryan_bryan_nenstiel_hoffmann_maria_collazo_et al._2013, title={Ge doped GaN with controllable high carrier concentration for plasmonic applications}, volume={103}, ISSN={0003-6951 1077-3118}, url={http://dx.doi.org/10.1063/1.4848555}, DOI={10.1063/1.4848555}, abstractNote={Controllable Ge doping in GaN is demonstrated for carrier concentrations of up to 2.4 × 1020 cm−3. Low temperature luminescence spectra from the highly doped samples reveal band gap renormalization and band filling (Burstein-Moss shift) in addition to a sharp transition. Infrared ellipsometry spectra demonstrate the existence of electron plasma with an energy around 3500 cm−1 and a surface plasma with an energy around 2000 cm−1. These findings open possibilities for the application of highly doped GaN for plasmonic devices.}, number={24}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Kirste, Ronny and Hoffmann, Marc P. and Sachet, Edward and Bobea, Milena and Bryan, Zachary and Bryan, Isaac and Nenstiel, Christian and Hoffmann, Axel and Maria, Jon-Paul and Collazo, Ramón and et al.}, year={2013}, month={Dec}, pages={242107} }
 @article{sachet_losego_guske_franzen_maria_2013, title={Mid-infrared surface plasmon resonance in zinc oxide semiconductor thin films}, volume={102}, number={5}, journal={Applied Physics Letters}, author={Sachet, E. and Losego, M. D. and Guske, J. and Franzen, S. and Maria, J. P.}, year={2013} }
 @article{seifikar_tabei_sachet_rawdanowicz_bassiri-gharb_schwartz_2012, title={Growth of (111) oriented NiFe2O4 polycrystalline thin films on Pt(111) via sol-gel processing}, volume={112}, ISSN={["1089-7550"]}, DOI={10.1063/1.4752725}, abstractNote={Polycrystalline NiFe2O4 (NFO) thin films are grown on (111) platinized Si substrates via chemical solution processing. θ-2θ x-ray diffraction, x-ray pole figures and electron diffraction indicate that the NFO has a high degree of 〈111〉 uniaxial texture normal to the film plane. The texturing is initiated by nucleation of (111) planes at the Pt interface and is enhanced with decreasing film thickness. As the NFO magnetic easy-axis is 〈111〉, the out-of-plane magnetization exhibits improved Mr/Ms and coercivity with respect to randomly oriented films on silicon substrates. The out-of-plane Mr/Ms ratio for (111) textured NFO thin film is improved from 30% in 150 nm-thick films to above 70% in 50 nm-thick films. The improved out-of-plane magnetic anisotropy is comparable to epitaxial NFO films of comparable thickness deposited by pulsed laser deposition and sputtering.}, number={6}, journal={JOURNAL OF APPLIED PHYSICS}, author={Seifikar, Safoura and Tabei, Ali and Sachet, Edward and Rawdanowicz, Thomas and Bassiri-Gharb, Nazanin and Schwartz, Justin}, year={2012}, month={Sep} }
 @article{seifikar_calandro_deeb_sachet_yang_maria_bassiri-gharb_schwartz_2012, title={Structural and magnetic properties of biaxially textured NiFe2O4 thin films grown on c-plane sapphire}, volume={112}, ISSN={["1089-7550"]}, DOI={10.1063/1.4770366}, abstractNote={Chemical solution deposition is used to grow biaxially textured NiFe2O4 (NFO) thin films on (0001) sapphire substrates; a high degree of out-of-plane orientation in the 〈111〉 direction is confirmed by θ–2θ X-ray diffraction and pole figures. X-ray φ-scanning indicates in-plane texture and an epitaxial relationship between NFO (111) and Al2O3 (0001) in two crystallographic variants. The out-of-plane magnetization exhibits improved Mr/Ms from 0.5 in 110 nm-thick films to 0.8 in 60 nm-thick films. Compared to uniaxially textured NFO films on platinized silicon, the out-of-plane coercivity is reduced by 20%. The improved out-of-plane magnetic anisotropy is comparable to epitaxial NFO films of similar thickness deposited by pulsed laser deposition and sputtering.}, number={12}, journal={JOURNAL OF APPLIED PHYSICS}, author={Seifikar, Safoura and Calandro, Bridget and Deeb, Elisabeth and Sachet, Edward and Yang, Jijin and Maria, Jon-Paul and Bassiri-Gharb, Nazanin and Schwartz, Justin}, year={2012}, month={Dec} }