Fred A Stevie

Oxide dissolution and oxygen diffusion scenarios in niobium and implications on the Bean–Livingston barrier in superconducting cavities

Lechner, E. M., Angle, J. W., Palczewski, A. D., Stevie, F. A., Kelley, M. J., & Reece, C. E. (2024, April 4). Journal of Applied Physics.

Analysis of furnace contamination on superconducting radio frequency niobium using secondary-ion mass spectrometry

Angle, J. W., Lechner, E. M., Reece, C. E., Stevie, F. A., & Kelley, M. J. (2023, May 1). Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena.

Enhanced focused ion beam milling with use of nested raster patterns

Garcia, R., Giannuzzi, L. A., Stevie, F. A., & Strader, P. (2022, January 1). Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena, Vol. 40.

Improved quantitation of SIMS depth profile measurements of niobium via sample holder design improvements and characterization of grain orientation effects

Angle, J. W., Lechner, E. M., Palczewski, A. D., Reece, C. E., Stevie, F. A., & Kelley, M. J. (2022, March 1). Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena.

A study of dopant incorporation in Te-doped GaAsSb nanowires using a combination of XPS/UPS, and C-AFM/SKPM

Ramaswamy, P., Devkota, S., Pokharel, R., Nalamati, S., Stevie, F., Jones, K., … Iyer, S. (2021, April 15). Scientific Reports.

Advances in secondary ion mass spectrometry for N-doped niobium

Angle, J. W., Palczewski, A. D., Reece, C. E., Stevie, F. A., & Kelley, M. J. (2021, March 1). Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena.

Analysis of permethrin treated fabric using ToF-SIMS

Zhou, C., Stevie, F., & Garcia, R. (2020, April 14). Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena, Vol. 38.

Introduction to x-ray photoelectron spectroscopy

Stevie, F. A., & Donley, C. L. (2020, September 24). Journal of Vacuum Science & Technology A Vacuum Surfaces and Films.

Sample handling, preparation and mounting for XPS and other surface analytical techniques

Stevie, F. A., Garcia, R., Shallenberger, J., Newman, J. G., & Donley, C. L. (2020, September 11). Journal of Vacuum Science & Technology A Vacuum Surfaces and Films, Vol. 38.

Electron backscatter diffraction of Nb3Sn coated niobium: Revealing structure as a function of depth

Tuggle, J., Pudasaini, U., Angle, J., Eremeev, G., Reece, C. E., Stevie, F. A., & Kelley, M. J. (2019, August 19). Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena.

Determination of chemical composition in multilayer polymer film using ToF-SIMS

Zhou, C., Sun, D., Garcia, R., & Stevie, F. A. (2018, January 1). Analytical Methods, Vol. 10, pp. 2444–2449.

Imaging and quantitative analysis of insecticide in mosquito net fibers using Time-of-Flight Secondary Ion Mass Spectrometry (ToF-SIMS)

Smith, S. C., Zhou, C., Stevie, F. A., & Garcia, R. (2018, December 26). PLoS ONE, Vol. 13.

Improvement in detection limit for time-of-flight SIMS analysis of dopants in GaN structures

Klump, A., Zhou, C., Stevie, F. A., Collazo, R., & Sitar, Z. (2018, January 22). Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena, Vol. 36.

Quantification of organic materials by ion implantation

Zhou, C., Stevie, F. A., & Smith, S. C. (2018, February 21). Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena.

Secondary ion mass spectrometry for superconducting radiofrequency cavity materials

Tuggle, J., Pudasaini, U., Stevie, F. A., Kelley, M. J., Palczewski, A. D., & Reece, C. E. (2018, September 1). Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena.

ToF-SIMS analysis of ion implanted standard to quantify insecticide in mosquito netting with cesium and argon gas cluster sputtering beams

Zhou, C., Stevie, F. A., Smith, S. C., Rading, D., & Zakel, J. (2018, February 14). Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena.

Analysis of hydrogen in materials with and without high hydrogen mobility

Stevie, F. A. (2016, January 6). Surface and Interface Analysis.

Improvement of hydrogen detection limit for quadruple SIMS tool

Zhang, Z., Hengstebeck, B., Stevie, F. A., & Hopstaken, M. (2016, May 1).

Method for quantification of insecticide in mosquito netting using ion implantation and ToF-SIMS analysis

Zhou, C., Stevie, F. A., & Smith, S. C. (2016, January 25). Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena.

SIMS measurement of hydrogen and deuterium detection limits in silicon: Comparison of different SIMS instrumentation

Stevie, F. A., Zhou, C., Hopstaken, M., Saccomanno, M., Zhang, Z., & Turansky, A. (2016, January 19). Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena.

SRF niobium characterization using SIMS and FIB-TEM

Stevie, F. A. (2015, January 1). AIP Conference Proceedings.

Back side SIMS analysis

Stevie, F. A., Garcia, R., Richardson, C., & Zhou, C. (2014, March 21). Surface and Interface Analysis, Vol. 46, pp. 241–243.

FIB‐SIMS quantification using TOF‐SIMS with Ar and Xe plasma sources

Stevie, F. A., Sedlacek, L., Babor, P., Jiruse, J., Principe, E., & Klosova, K. (2014, March 21). Surface and Interface Analysis.

SIMS analysis of high‐performance accelerator niobium

Maheshwari, P., Stevie, F. A., Myneni, G. R., Ciovati, G., Rigsbee, J. M., Dhakal, P., & Griffis, D. P. (2014, March 21). Surface and Interface Analysis.

TOF SIMS analyses of stray Ga during FIB milling

Santeufemio, C., Gorman, B. P., Zhou, C., Giannuzzi, L. A., & Stevie, F. A. (2013, October 17). Journal of Vacuum Science & Technology A Vacuum Surfaces and Films.

Quantification of cesium surface contamination on silicon resulting from SIMS analysis

Penley, C., Stevie, F. A., & Griffis, D. P. (2012, March 28). Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena.

SIMS analysis of zinc oxide LED structures: quantification and analysis issues

Stevie, F. A., Maheshwari, P., Pierce, J. M., Adekore, B. T., & Griffis, D. P. (2012, March 8). Surface and Interface Analysis.

Analysis of Interstitial Elements in Niobium with Secondary Ion Mass Spectrometry (SIMS)

Maheshwari, P., Stevie, F. A., Myeneni, G., Ciovati, G., Rigsbee, J. M., & Griffis, D. P. (2011, January 1). AIP Conference Proceedings.

High fieldQslope and the baking effect: Review of recent experimental results and new data on Nb heat treatments

Ciovati, G., Myneni, G., Stevie, F., Maheshwari, P., & Griffis, D. (2010, February 22). Physical Review Special Topics - Accelerators and Beams.

Secondary ion mass spectrometry characterization of anomalous behavior for low dose ion implanted phosphorus in silicon

Penley, C., Stevie, F. A., Griffis, D. P., Siebel, S., Kulig, L., & Lee, J. (2010, April 23). Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena.

Surface analysis of Nb materials for SRF cavities

Maheshwari, P., Tian, H., Reece, C. E., Kelley, M. J., Myneni, G. R., Stevie, F. A., … Griffis, D. P. (2010, June 1). Surface and Interface Analysis.

On the origin of aluminum-related cathodoluminescence emissions from sublimation grown 4H-SiC()

Bishop, S. M., Reynolds, C. L., Molstad, J. C., Stevie, F. A., Barnhardt, D. E., & Davis, R. F. (2009, February 25). Applied Surface Science.

Quantification in dynamic SIMS: Current status and future needs

Stevie, F. A., & Griffis, D. P. (2008, May 9). Applied Surface Science.

Sublimation growth of an in-situ-deposited layer in SiC chemical vapor deposition on 4H-SiC(112¯0)

Bishop, S. M., Reynolds, C. L., Liliental-Weber, Z., Uprety, Y., Ebert, C. W., Stevie, F. A., … Davis, R. F. (2008, October 16). Journal of Crystal Growth.

Carbon-13 Labeling for Quantitative Analysis of Molecular Movement in Heterogeneous Organic Materials Using Secondary Ion Mass Spectrometry

Harton, S. E., Zhu, Z., Stevie, F. A., Aoyama, Y., & Ade, H. (2007, June 8). Analytical Chemistry, Vol. 79, pp. 5358–5363.

Improved understanding of an electron beam charge compensation method for magnetic sector secondary ion mass spectrometer analysis of insulators

Zhu, Z., Gu, C., Stevie, F. A., & Griffis, D. P. (2007, July 1). Journal of Vacuum Science & Technology A Vacuum Surfaces and Films.

Mass fractionation of carbon and hydrogen secondary ions upon Cs+ and O2+ bombardment of organic materials

Harton, S. E., Zhu, Z., Stevie, F. A., Griffis, D. P., & Ade, H. (2007, April 2). Journal of Vacuum Science & Technology A Vacuum Surfaces and Films, Vol. 25, pp. 480–484.

Model study of electron beam charge compensation for positive secondary ion mass spectrometry using a positive primary ion beam

Zhu, Z., Stevie, F. A., & Griffis, D. P. (2007, October 11). Applied Surface Science.

Back side SIMS analysis of hafnium silicate

Gu, C., Stevie, F. A., Bennett, J., Garcia, R., & Griffis, D. P. (2006, May 3). Applied Surface Science, Vol. 252, pp. 7179–7181.

Carbon-13 Labeled Polymers:  An Alternative Tracer for Depth Profiling of Polymer Films and Multilayers Using Secondary Ion Mass Spectrometry

Harton, S. E., Stevie, F. A., Zhu, Z., & Ade, H. (2006, April 8). Analytical Chemistry, Vol. 78, pp. 3452–3460.

Carbon-13 labeling for improved tracer depth profiling of organic materials using secondary ion mass spectrometry

Harton, S. E., Stevie, F. A., & Ade, H. (2006, June 1). Journal of the American Society for Mass Spectrometry, Vol. 17, pp. 1142–1145.

Diffusion behavior of implanted Li ions in GaN thin films studied by secondary ion mass spectrometry

Salman, F., Chow, L., Chai, B., & Stevie, F. A. (2006, February 1). Materials Science in Semiconductor Processing.

Diffusion profiles of low dosages chromium ions implanted into (100) crystalline silicon

Salman, F., Zhang, P., Chow, L., & Stevie, F. A. (2006, February 1). Materials Science in Semiconductor Processing.

Investigation of the Effects of Isotopic Labeling at a PS/PMMA Interface Using SIMS and Mean-Field Theory

Harton, S. E., Stevie, F. A., & Ade, H. (2006, January 26). Macromolecules, Vol. 39, pp. 1639–1645.

SIMS depth profiling of deuterium labeled polymers in polymer multilayers

Harton, S. E., Stevie, F. A., Griffis, D. P., & Ade, H. (2006, May 22). Applied Surface Science, Vol. 252, pp. 7224–7227.

SIMS quantification of matrix and impurity species in AlxGa1−xN

Gu, C. J., Stevie, F. A., Hitzman, C. J., Saripalli, Y. N., Johnson, M., & Griffis, D. P. (2006, May 5). Applied Surface Science.

Thermal stability of lanthanum scandate dielectrics on Si(100)

Sivasubramani, P., Lee, T. H., Kim, M. J., Kim, J., Gnade, B. E., Wallace, R. M., … Griffis, D. P. (2006, December 11). Applied Physics Letters, Vol. 89.

Diffusion-Controlled Reactive Coupling at Polymer−Polymer Interfaces

Harton, S. E., Stevie, F. A., & Ade, H. (2005, April 2). Macromolecules, Vol. 38, pp. 3543–3546.

Growth of dense ZnO films via MOVPE on GaN(0001) epilayers using a low/high-temperature sequence

Pierce, J. M., Adekore, B. T., Davis, R. F., & Stevie, F. A. (2005, March 11). Journal of Crystal Growth.

Homoepitaxial growth of dense ZnO(0001) and ZnO (1120) films via MOVPE on selected ZnO substrates

Journal of Crystal Growth, 283(02-Jan), 147–155.

Introduction to focused ion beams: Instrumentation, theory, techniques, and practice

New York: Springer.

Investigation of Blend Miscibility of a Ternary PS/PCHMA/PMMA System Using SIMS and Mean-Field Theory

Harton, S. E., Koga, T., Stevie, F. A., Araki, T., & Ade, H. (2005, November 12). Macromolecules, Vol. 38, pp. 10511–10515.

Low-temperature reactive coupling at polymer–polymer interfaces facilitated by supercritical CO2

Polymer, 46(23), 10173–10179.

Segregation and enhanced diffusion of nitrogen in silicon induced by low energy ion bombardment

Stoddard, N., Duscher, G., Karoui, A., Stevie, F., & Rozgonyi, G. (2005, April 6). Journal of Applied Physics.

Diffusion profiles of high dosage Cr and V ions implanted into silicon

Zhang, P., Stevie, F., Vanfleet, R., Neelakantan, R., Klimov, M., Zhou, D., & Chow, L. (2004, June 23). Journal of Applied Physics.

Improved charge neutralization method for depth profiling of bulk insulators using O2+ primary beam on a magnetic sector SIMS instrument

Pivovarov, A. L., Stevie, F. A., & Griffis, D. P. (2004, April 29). Applied Surface Science.

O2+ versus Cs+ for high depth resolution depth profiling of III–V nitride-based semiconductor devices

Kachan, M., Hunter, J., Kouzminov, D., Pivovarov, A., Gu, J., Stevie, F., & Griffis, D. (2004, May 13). Applied Surface Science.

Preface

Hunter, J., Schueler, B. W., & Stevie, F. A. (2004, April 23). Applied Surface Science.

Secondary ion mass spectrometry backside analysis of barrier layers for copper diffusion

Gu, C., Pivovarov, A., Garcia, R., Stevie, F., Griffis, D., Moran, J., … Richards, J. F. (2004, January 1). Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena, Vol. 22, pp. 350–354.

Site-specific SIMS backside analysis

Gu, C., Garcia, R., Pivovarov, A., Stevie, F., & Griffis, D. (2004, April 29). Applied Surface Science, Vol. 231-232, pp. 663–667.

Utilization of electron impact ionization of gaseous and sputtered species in the secondary ion acceleration region of a magnetic sector SIMS instrument

Pivovarov, A., Gu, C., Stevie, F., & Griffis, D. (2004, April 29). Applied Surface Science.

Diffusion of 18 elements implanted into thermally grown SiO2

Francois-Saint-Cyr, H. G., Stevie, F. A., McKinley, J. M., Elshot, K., Chow, L., & Richardson, K. A. (2003, December 4). Journal of Applied Physics.

Optimization of secondary ion mass spectrometry detection limit for N in SiC

Pivovarov, A. L., Stevie, F. A., Griffis, D. P., & Guryanov, G. M. (2003, July 23). Journal of Vacuum Science & Technology A Vacuum Surfaces and Films.

In-fab techniques for baselining implant dose, contamination

Solid State Technology, 45(8), 63-.

Secondary ion mass spectrometry induced damage adjacent to analysis craters in silicon

Clark, M. H., Jones, K. S., & Stevie, F. A. (2002, September 1). Journal of Vacuum Science & Technology A Vacuum Surfaces and Films.

Utilizing the SIMS technique in the study of grain boundary diffusion along twist grain boundaries in the Cu(Ni) system

Schwarz, S. M., Kempshall, B. W., Giannuzzi, L. A., & Stevie, F. A. (2002, December 3). Acta Materialia.

XPS analysis of FIB‐milled Si

Ferryman, A. C., Fulghum, J. E., Giannuzzi, L. A., & Stevie, F. A. (2002, November 21). Surface and Interface Analysis.