Fred A Stevie

Oxide dissolution and oxygen diffusion scenarios in niobium and implications on the Bean-Livingston barrier in superconducting cavities

JOURNAL OF APPLIED PHYSICS, 135(13).

Analysis of furnace contamination on superconducting radio frequency niobium using secondary-ion mass spectrometry

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 41(3).

Enhanced focused ion beam milling with use of nested raster patterns

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 40(1).

Improved quantitation of SIMS depth profile measurements of niobium via sample holder design improvements and characterization of grain orientation effects

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 40(2).

A study of dopant incorporation in Te-doped GaAsSb nanowires using a combination of XPS/UPS, and C-AFM/SKPM

SCIENTIFIC REPORTS, 11(1).

Advances in secondary ion mass spectrometry for N-doped niobium

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 39(2).

Analysis of permethrin treated fabric using ToF-SIMS

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 38(3).

Introduction to x-ray photoelectron spectroscopy

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 38(6).

Sample handling, preparation and mounting for XPS and other surface analytical techniques

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 38(6).

Electron backscatter diffraction of Nb3Sn coated niobium: Revealing structure as a function of depth

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 37(5).

Determination of chemical composition in multilayer polymer film using ToF-SIMS

ANALYTICAL METHODS, 10(21), 2444–2449.

Imaging and quantitative analysis of insecticide in mosquito net fibers using Time-of-Flight Secondary Ion Mass Spectrometry (ToF-SIMS)

PLOS ONE, 13(12).

Improvement in detection limit for time-of-flight SIMS analysis of dopants in GaN structures

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 36(3).

Quantification of organic materials by ion implantation

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 36(3).

Secondary ion mass spectrometry for superconducting radiofrequency cavity materials

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 36(5).

ToF-SIMS analysis of ion implanted standard to quantify insecticide in mosquito netting with cesium and argon gas cluster sputtering beams

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 36(3).

Analysis of hydrogen in materials with and without high hydrogen mobility

SURFACE AND INTERFACE ANALYSIS, 48(5), 310–314.

Improvement of hydrogen detection limit for quadruple SIMS tool

2016 27th annual semi advanced semiconductor manufacturing conference (asmc), 172–175.

Method for quantification of insecticide in mosquito netting using ion implantation and ToF-SIMS analysis

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 34(3).

SIMS measurement of hydrogen and deuterium detection limits in silicon: Comparison of different SIMS instrumentation

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 34(3).

SRF Niobium Characterization Using SIMS and FIB-TEM

SCIENCE AND TECHNOLOGY OF INGOT NIOBIUM FOR SUPERCONDUCTING RADIO FREQUENCY APPLICATIONS, Vol. 1687.

Back side SIMS analysis

Stevie, F. A., Garcia, R., Richardson, C., & Zhou, C. (2014, November). SURFACE AND INTERFACE ANALYSIS, Vol. 46, pp. 241–243.

FIB-SIMS quantification using TOF-SIMS with Ar and Xe plasma sources

Stevie, F. A., Sedlacek, L., Babor, P., Jiruse, J., Principe, E., & Klosova, K. (2014, November). SURFACE AND INTERFACE ANALYSIS, Vol. 46, pp. 285–287.

SIMS analysis of high-performance accelerator niobium

Maheshwari, P., Stevie, F. A., Myneni, G. R., Ciovati, G., Rigsbee, J. M., Dhakal, P., & Griffis, D. P. (2014, November). SURFACE AND INTERFACE ANALYSIS, Vol. 46, pp. 288–290.

TOF SIMS analyses of stray Ga during FIB milling

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 31(6).

Quantification of cesium surface contamination on silicon resulting from SIMS analysis

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 30(3).

SIMS analysis of zinc oxide LED structures: quantification and analysis issues

Stevie, F. A., Maheshwari, P., Pierce, J. M., Adekore, B. T., & Griffis, D. P. (2013, January). SURFACE AND INTERFACE ANALYSIS, Vol. 45, pp. 352–355.

Analysis of Interstitial Elements in Niobium with Secondary Ion Mass Spectrometry (SIMS)

INTERNATIONAL SYMPOSIUM ON THE SUPERCONDUCTING SCIENCE & TECHNOLOGY OF INGOT NIOBIUM, Vol. 1352, pp. 151-+.

High field Q slope and the baking effect: Review of recent experimental results and new data on Nb heat treatments

PHYSICAL REVIEW SPECIAL TOPICS-ACCELERATORS AND BEAMS, 13(2).

Secondary ion mass spectrometry characterization of anomalous behavior for low dose ion implanted phosphorus in silicon

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 28(3), 511–516.

Surface analysis of Nb materials for SRF cavities

SURFACE AND INTERFACE ANALYSIS, Vol. 43, pp. 151–153.

On the origin of aluminum-related cathodoluminescence emissions from sublimation grown 4H-SiC(11(2)over-bar0)

APPLIED SURFACE SCIENCE, 255(13-14), 6535–6539.

Quantification in dynamic SIMS: Current status and future needs

APPLIED SURFACE SCIENCE, 255(4), 1364–1367.

Sublimation growth of an in-situ-deposited layer in SiC chemical vapor deposition on 4H-SiC(1 1 (2)over-bar 0)

JOURNAL OF CRYSTAL GROWTH, 311(1), 72–78.

Carbon-13 labeling for quantitative analysis of molecular movement in heterogeneous organic materials using secondary ion mass spectrometry

ANALYTICAL CHEMISTRY, 79(14), 5358–5363.

Improved understanding of an electron beam charge compensation method for magnetic sector secondary ion mass spectrometer analysis of insulators

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 25(4), 769–774.

Mass fractionation of carbon and hydrogen secondary ions upon Cs+ and O-2(+) bombardment of organic materials

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 25(3), 480–484.

Model study of electron beam charge compensation for positive secondary ion mass spectrometry using a positive primary ion beam

Applied Surface Science, 254(9), 2708–2711.

Back side SIMS analysis of hafnium silicate

Gu, C., Stevie, F. A., Bennett, J., Garcia, R., & GriffiS, D. P. (2006, July 30). APPLIED SURFACE SCIENCE, Vol. 252, pp. 7179–7181.

Carbon-13 labeled polymers: An alternative tracer for depth profiling of polymer films and multilayers using secondary ion mass spectrometry

ANALYTICAL CHEMISTRY, 78(10), 3452–3460.

Carbon-13 labeling for improved tracer depth profiling of organic materials using secondary ion mass spectrometry

JOURNAL OF THE AMERICAN SOCIETY FOR MASS SPECTROMETRY, 17(8), 1142–1145.

Diffusion behavior of implanted Li ions in GaN thin films studied by secondary ion mass spectrometry

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, Vol. 9, pp. 375–379.

Diffusion profiles of low dosages chromium ions implanted into (100) crystalline silicon

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, Vol. 9, pp. 62–65.

Investigation of the effects of isotopic labeling, at a PS/PMMA interface using SIMS and mean-field theory

MACROMOLECULES, 39(4), 1639–1645.

SIMS depth profiling of deuterium labeled polymers in polymer multilayers

Harton, S. E., Stevie, F. A., Griffis, D. P., & Ade, H. (2006, July 30). APPLIED SURFACE SCIENCE, Vol. 252, pp. 7224–7227.

SIMS quantification of matrix and impurity species in AlxGa1-xN

Gu, C. J., Stevie, F. A., Hitzman, C. J., Saripalli, Y. N., Johnson, M., & Griffis, D. P. (2006, July 30). APPLIED SURFACE SCIENCE, Vol. 252, pp. 7228–7231.

Thermal stability of lanthanum scandate dielectrics on Si(100)

APPLIED PHYSICS LETTERS, 89(24).

Diffusion-controlled reactive coupling at polymer-polymer interfaces

MACROMOLECULES, 38(9), 3543–3546.

Growth of dense ZnO films via MOVPE on GaN(0001) epilayers using a low/high-temperature sequence

JOURNAL OF CRYSTAL GROWTH, 277(1-4), 345–351.

Homoepitaxial growth of dense ZnO(0001) and ZnO (1120) films via MOVPE on selected ZnO substrates

Journal of Crystal Growth, 283(02-Jan), 147–155.

Introduction to focused ion beams: Instrumentation, theory, techniques, and practice

New York: Springer.

Investigation of blend miscibility of a ternary PS/PCHMA/PMMA system using SIMS and mean-field theory

MACROMOLECULES, 38(25), 10511–10515.

Low-temperature reactive coupling at polymer–polymer interfaces facilitated by supercritical CO2

Polymer, 46(23), 10173–10179.

Segregation and enhanced diffusion of nitrogen in silicon induced by low energy ion bombardment

JOURNAL OF APPLIED PHYSICS, 97(8).

Diffusion profiles of high dosage Cr and V ions implanted into silicon

JOURNAL OF APPLIED PHYSICS, 96(2), 1053–1058.

Improved charge neutralization method for depth profiling of bulk insulators using O-2(+) primary beam on a magnetic sector SIMS instrument

Pivovarov, A. L., Stevie, F. A., & Griffis, D. P. (2004, June 15). APPLIED SURFACE SCIENCE, Vol. 231, pp. 786–790.

O-2(+) versus Cs+ for high depth resolution depth profiling of III-V nitride-based semiconductor devices

Kachan, M., Hunter, J., Kouzminov, D., Pivovarov, A., Gu, J., Stevie, F., & Griffis, D. (2004, June 15). APPLIED SURFACE SCIENCE, Vol. 231, pp. 684–687.

Secondary ion mass spectrometry backside analysis of barrier layers for copper diffusion

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol. 22, pp. 350–354.

Site-specific SIMS backside analysis

Gu, C., Garcia, R., Pivovarov, A., Stevie, F., & Griffis, D. (2004, June 15). APPLIED SURFACE SCIENCE, Vol. 231, pp. 663–667.

Special Issue - Secondary Ion Mass Spectrometry SIMS XIV - Proceedings of the Fourteenth International Conference on Secondary Ion Mass Spectrometry and Related Topics - San Diego, California, USA, September 14-19, 2003 - Preface

Hunter, J., Schueler, B. W., & Stevie, F. A. (2004, June 15). APPLIED SURFACE SCIENCE, Vol. 231, pp. 1–2.

Utilization of electron impact ionization of gaseous and sputtered species in the secondary ion acceleration region of a magnetic sector SIMS instrument

Pivovarov, A., Gu, C., Stevie, F., & Griffis, D. (2004, June 15). APPLIED SURFACE SCIENCE, Vol. 231, pp. 781–785.

Diffusion of 18 elements implanted into thermally grown SiO2

JOURNAL OF APPLIED PHYSICS, 94(12), 7433–7439.

Optimization of secondary ion mass spectrometry detection limit for N in SiC

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 21(5), 1649–1654.

In-fab techniques for baselining implant dose, contamination

Solid State Technology, 45(8), 63-.

Secondary ion mass spectrometry induced damage adjacent to analysis craters in silicon

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, Vol. 20, pp. 1663–1666.

Utilizing the SIMS technique in the study of grain boundary diffusion along twist grain boundaries in the Cu(Ni) system

ACTA MATERIALIA, 50(20), 5079–5084.

XPS analysis of FIB-milled Si

SURFACE AND INTERFACE ANALYSIS, 33(12), 907–913.