Fred Stevie

Angle, J. W., Lechner, E. M., Reece, C. E., Stevie, F. A., & Kelley, M. J. (2023). Analysis of furnace contamination on superconducting radio frequency niobium using secondary-ion mass spectrometry. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 41(3). https://doi.org/10.1116/6.0002624

Garcia, R., Giannuzzi, L. A., Stevie, F. A., & Strader, P. (2022). Enhanced focused ion beam milling with use of nested raster patterns. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 40(1). https://doi.org/10.1116/6.0001411

Angle, J. W., Lechner, E. M., Palczewski, A. D., Reece, C. E., Stevie, F. A., & Kelley, M. J. (2022). Improved quantitation of SIMS depth profile measurements of niobium via sample holder design improvements and characterization of grain orientation effects. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 40(2). https://doi.org/10.1116/6.0001741

Ramaswamy, P., Devkota, S., Pokharel, R., Nalamati, S., Stevie, F., Jones, K., … Iyer, S. (2021). A study of dopant incorporation in Te-doped GaAsSb nanowires using a combination of XPS/UPS, and C-AFM/SKPM. SCIENTIFIC REPORTS, 11(1). https://doi.org/10.1038/s41598-021-87825-4

Angle, J. W., Palczewski, A. D., Reece, C. E., Stevie, F. A., & Kelley, M. J. (2021). Advances in secondary ion mass spectrometry for N-doped niobium. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 39(2). https://doi.org/10.1116/6.0000848

Zhou, C., Stevie, F., & Garcia, R. (2020). Analysis of permethrin treated fabric using ToF-SIMS. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 38(3). https://doi.org/10.1116/1.5141467

Stevie, F. A., & Donley, C. L. (2020). Introduction to x-ray photoelectron spectroscopy. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 38(6). https://doi.org/10.1116/6.0000412

Stevie, F. A., Garcia, R., Shallenberger, J., Newman, J. G., & Donley, C. L. (2020). Sample handling, preparation and mounting for XPS and other surface analytical techniques. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 38(6). https://doi.org/10.1116/6.0000421

Tuggle, J., Pudasaini, U., Angle, J., Eremeev, G., Reece, C. E., Stevie, F. A., & Kelley, M. J. (2019). Electron backscatter diffraction of Nb3Sn coated niobium: Revealing structure as a function of depth. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 37(5). https://doi.org/10.1116/1.5096338

Zhou, C., Sun, D., Garcia, R., & Stevie, F. A. (2018). Determination of chemical composition in multilayer polymer film using ToF-SIMS. ANALYTICAL METHODS, 10(21), 2444–2449. https://doi.org/10.1039/c8ay00344k

Smith, S. C., Zhou, C., Stevie, F. A., & Garcia, R. (2018). Imaging and quantitative analysis of insecticide in mosquito net fibers using Time-of-Flight Secondary Ion Mass Spectrometry (ToF-SIMS). PLOS ONE, 13(12). https://doi.org/10.1371/journal.pone.0209119

Klump, A., Zhou, C., Stevie, F. A., Collazo, R., & Sitar, Z. (2018). Improvement in detection limit for time-of-flight SIMS analysis of dopants in GaN structures. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 36(3). https://doi.org/10.1116/1.5013001

Zhou, C., Stevie, F. A., & Smith, S. C. (2018). Quantification of organic materials by ion implantation. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 36(3). https://doi.org/10.1116/1.5011735

Tuggle, J., Pudasaini, U., Stevie, F. A., Kelley, M. J., Palczewski, A. D., & Reece, C. E. (2018). Secondary ion mass spectrometry for superconducting radiofrequency cavity materials. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 36(5). https://doi.org/10.1116/1.5041093

Zhou, C., Stevie, F. A., Smith, S. C., Rading, D., & Zakel, J. (2018). ToF-SIMS analysis of ion implanted standard to quantify insecticide in mosquito netting with cesium and argon gas cluster sputtering beams. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 36(3). https://doi.org/10.1116/1.5011751

Stevie, F. A. (2016). Analysis of hydrogen in materials with and without high hydrogen mobility. SURFACE AND INTERFACE ANALYSIS, 48(5), 310–314. https://doi.org/10.1002/sia.5930

Zhang, Z., Hengstebeck, B., Stevie, F. A., & Hopstaken, M. (2016). Improvement of hydrogen detection limit for quadruple SIMS tool. 2016 27th annual semi advanced semiconductor manufacturing conference (asmc), 172–175. https://doi.org/10.1109/asmc.2016.7491119

Zhou, C., Stevie, F. A., & Smith, S. C. (2016). Method for quantification of insecticide in mosquito netting using ion implantation and ToF-SIMS analysis. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 34(3). https://doi.org/10.1116/1.4940394

Stevie, F. A., Zhou, C., Hopstaken, M., Saccomanno, M., Zhang, Z., & Turansky, A. (2016). SIMS measurement of hydrogen and deuterium detection limits in silicon: Comparison of different SIMS instrumentation. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 34(3). https://doi.org/10.1116/1.4940151

Stevie, F. A. (2015). SRF Niobium Characterization Using SIMS and FIB-TEM. SCIENCE AND TECHNOLOGY OF INGOT NIOBIUM FOR SUPERCONDUCTING RADIO FREQUENCY APPLICATIONS, Vol. 1687. https://doi.org/10.1063/1.4935321

Stevie, F. A., Garcia, R., Richardson, C., & Zhou, C. (2014, November). Back side SIMS analysis. SURFACE AND INTERFACE ANALYSIS, Vol. 46, pp. 241–243. https://doi.org/10.1002/sia.5470

Stevie, F. A., Sedlacek, L., Babor, P., Jiruse, J., Principe, E., & Klosova, K. (2014, November). FIB-SIMS quantification using TOF-SIMS with Ar and Xe plasma sources. SURFACE AND INTERFACE ANALYSIS, Vol. 46, pp. 285–287. https://doi.org/10.1002/sia.5483

Maheshwari, P., Stevie, F. A., Myneni, G. R., Ciovati, G., Rigsbee, J. M., Dhakal, P., & Griffis, D. P. (2014, November). SIMS analysis of high-performance accelerator niobium. SURFACE AND INTERFACE ANALYSIS, Vol. 46, pp. 288–290. https://doi.org/10.1002/sia.5461

Stevie, F. A., Maheshwari, P., Pierce, J. M., Adekore, B. T., & Griffis, D. P. (2013, January). SIMS analysis of zinc oxide LED structures: quantification and analysis issues. SURFACE AND INTERFACE ANALYSIS, Vol. 45, pp. 352–355. https://doi.org/10.1002/sia.4919

Santeufemio, C., Gorman, B. P., Zhou, C., Giannuzzi, L. A., & Stevie, F. A. (2013). TOF SIMS analyses of stray Ga during FIB milling. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 31(6). https://doi.org/10.1116/1.4825403

Penley, C., Stevie, F. A., & Griffis, D. P. (2012). Quantification of cesium surface contamination on silicon resulting from SIMS analysis. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 30(3). https://doi.org/10.1116/1.3698400

Maheshwari, P., Stevie, F. A., Myeneni, G., Ciovati, G., Rigsbee, J. M., & Griffis, D. P. (2011). Analysis of Interstitial Elements in Niobium with Secondary Ion Mass Spectrometry (SIMS). INTERNATIONAL SYMPOSIUM ON THE SUPERCONDUCTING SCIENCE & TECHNOLOGY OF INGOT NIOBIUM, Vol. 1352, pp. 151-+. https://doi.org/10.1063/1.3579233

Maheshwari, P., Tian, H., Reece, C. E., Kelley, M. J., Myneni, G. R., Stevie, F. A., … Griffis, D. P. (2011). Surface analysis of Nb materials for SRF cavities. SURFACE AND INTERFACE ANALYSIS, Vol. 43, pp. 151–153. https://doi.org/10.1002/sia.3513

Ciovati, G., Myneni, G., Stevie, F., Maheshwari, P., & Griffis, D. (2010). High field Q slope and the baking effect: Review of recent experimental results and new data on Nb heat treatments. PHYSICAL REVIEW SPECIAL TOPICS-ACCELERATORS AND BEAMS, 13(2). https://doi.org/10.1103/physrevstab.13.022002

Penley, C., Stevie, F. A., Griffis, D. P., Siebel, S., Kulig, L., & Lee, J. (2010). Secondary ion mass spectrometry characterization of anomalous behavior for low dose ion implanted phosphorus in silicon. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 28(3), 511–516. https://doi.org/10.1116/1.3406141

Bishop, S. M., Reynolds, C. L., Molstad, J. C., Stevie, F. A., Barnhardt, D. E., & Davis, R. F. (2009). On the origin of aluminum-related cathodoluminescence emissions from sublimation grown 4H-SiC(11(2)over-bar0). APPLIED SURFACE SCIENCE, 255(13-14), 6535–6539. https://doi.org/10.1016/j.apsusc.2009.02.036

Zhu, Z. M., Stevie, F. A., & Griffis, D. P. (2008). Model study of electron beam charge compensation for positive secondary ion mass spectrometry using a positive primary ion beam. Applied Surface Science, 254(9), 2708–2711. https://doi.org/10.1016/j.apsusc.2007.10.008

Stevie, F. A., & Griffis, D. P. (2008). Quantification in dynamic SIMS: Current status and future needs. APPLIED SURFACE SCIENCE, 255(4), 1364–1367. https://doi.org/10.1016/j.apsusc.2008.05.041

Bishop, S. M., Reynolds, C. L., Jr., Liliental-Weber, Z., Uprety, Y., Ebert, C. W., Stevie, F. A., … Davis, R. F. (2008). Sublimation growth of an in-situ-deposited layer in SiC chemical vapor deposition on 4H-SiC(1 1 (2)over-bar 0). JOURNAL OF CRYSTAL GROWTH, 311(1), 72–78. https://doi.org/10.1016/j.jcrysgro.2008.09.200

Harton, S. E., Zhu, Z., Stevie, F. A., Aoyama, Y., & Ade, H. (2007). Carbon-13 labeling for quantitative analysis of molecular movement in heterogeneous organic materials using secondary ion mass spectrometry. ANALYTICAL CHEMISTRY, 79(14), 5358–5363. https://doi.org/10.1021/ac070437q

Zhu, Z., Gu, C., Stevie, F. A., & Griffis, D. P. (2007). Improved understanding of an electron beam charge compensation method for magnetic sector secondary ion mass spectrometer analysis of insulators. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 25(4), 769–774. https://doi.org/10.1116/1.2746044

Harton, S. E., Zhu, Z., Stevie, F. A., Griffis, D. P., & Ade, H. (2007). Mass fractionation of carbon and hydrogen secondary ions upon Cs+ and O-2(+) bombardment of organic materials. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 25(3), 480–484. https://doi.org/10.1116/1.2718957

Gu, C., Stevie, F. A., Bennett, J., Garcia, R., & GriffiS, D. P. (2006, July 30). Back side SIMS analysis of hafnium silicate. APPLIED SURFACE SCIENCE, Vol. 252, pp. 7179–7181. https://doi.org/10.1016/j.apsusc.2006.02.099

Harton, S. E., Stevie, F. A., Zhu, Z., & Ade, H. (2006). Carbon-13 labeled polymers: An alternative tracer for depth profiling of polymer films and multilayers using secondary ion mass spectrometry. ANALYTICAL CHEMISTRY, 78(10), 3452–3460. https://doi.org/10.1021/ac060133o

Harton, S. E., Stevie, F. A., & Ade, H. (2006). Carbon-13 labeling for improved tracer depth profiling of organic materials using secondary ion mass spectrometry. JOURNAL OF THE AMERICAN SOCIETY FOR MASS SPECTROMETRY, 17(8), 1142–1145. https://doi.org/10.1016/j.jasms.2006.03.018

Salman, F., Chow, L., Chai, B., & Stevie, F. A. (2006). Diffusion behavior of implanted Li ions in GaN thin films studied by secondary ion mass spectrometry. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, Vol. 9, pp. 375–379. https://doi.org/10.1016/j.mssp.2006.01.020

Salman, F., Zhang, P., Chow, L., & Stevie, F. A. (2006). Diffusion profiles of low dosages chromium ions implanted into (100) crystalline silicon. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, Vol. 9, pp. 62–65. https://doi.org/10.1016/j.mssp.2006.01.010

Harton, S. E., Stevie, F. A., & Ade, H. (2006). Investigation of the effects of isotopic labeling, at a PS/PMMA interface using SIMS and mean-field theory. MACROMOLECULES, 39(4), 1639–1645. https://doi.org/10.1021/ma052236z

Harton, S. E., Stevie, F. A., Griffis, D. P., & Ade, H. (2006, July 30). SIMS depth profiling of deuterium labeled polymers in polymer multilayers. APPLIED SURFACE SCIENCE, Vol. 252, pp. 7224–7227. https://doi.org/10.1016/j.apsusc.2006.02.146

Gu, C. J., Stevie, F. A., Hitzman, C. J., Saripalli, Y. N., Johnson, M., & Griffis, D. P. (2006, July 30). SIMS quantification of matrix and impurity species in AlxGa1-xN. APPLIED SURFACE SCIENCE, Vol. 252, pp. 7228–7231. https://doi.org/10.1016/j.apsusc.2006.02.148

Sivasubramani, P., Lee, T. H., Kim, M. J., Kim, J., Gnade, B. E., Wallace, R. M., … Griffis, D. P. (2006). Thermal stability of lanthanum scandate dielectrics on Si(100). APPLIED PHYSICS LETTERS, 89(24). https://doi.org/10.1063/1.2405418

Harton, S. E., Stevie, F. A., & Ade, H. (2005). Diffusion-controlled reactive coupling at polymer-polymer interfaces. MACROMOLECULES, 38(9), 3543–3546. https://doi.org/10.1021/ma047421b

Pierce, J. M., Adekore, B. T., Davis, R. F., & Stevie, F. A. (2005). Growth of dense ZnO films via MOVPE on GaN(0001) epilayers using a low/high-temperature sequence. JOURNAL OF CRYSTAL GROWTH, 277(1-4), 345–351. https://doi.org/10.1016/j.jcrysgro.2005.01.054

Pierce, J. M., Adekore, B. T., Davis, R. F., & Stevie, F. A. (2005). Homoepitaxial growth of dense ZnO(0001) and ZnO (1120) films via MOVPE on selected ZnO substrates. Journal of Crystal Growth, 283(02-Jan), 147–155.

Giannuzzi, L. A., & Stevie, F. A. (2005). Introduction to focused ion beams: Instrumentation, theory, techniques, and practice. New York: Springer.

Harton, S. E., Koga, T., Stevie, F. A., Araki, T., & Ade, H. (2005). Investigation of blend miscibility of a ternary PS/PCHMA/PMMA system using SIMS and mean-field theory. MACROMOLECULES, 38(25), 10511–10515. https://doi.org/10.1021/ma051595r

Harton, S. E., Stevie, F. A., Spontak, R. J., Koga, T., Rafailovich, M. H., Sokolov, J. C., & Ade, H. (2005). Low-temperature reactive coupling at polymer–polymer interfaces facilitated by supercritical CO2. Polymer, 46(23), 10173–10179. https://doi.org/10.1016/j.polymer.2005.07.085

Stoddard, N., Duscher, G., Karoui, A., Stevie, F., & Rozgonyi, G. (2005). Segregation and enhanced diffusion of nitrogen in silicon induced by low energy ion bombardment. JOURNAL OF APPLIED PHYSICS, 97(8). https://doi.org/10.1063/1.1866480

Zhang, P., Stevie, F., Vanfleet, R., Neelakantan, R., Klimov, M., Zhou, D., & Chow, L. (2004). Diffusion profiles of high dosage Cr and V ions implanted into silicon. JOURNAL OF APPLIED PHYSICS, 96(2), 1053–1058. https://doi.org/10.1063/1.1756221

Pivovarov, A. L., Stevie, F. A., & Griffis, D. P. (2004, June 15). Improved charge neutralization method for depth profiling of bulk insulators using O-2(+) primary beam on a magnetic sector SIMS instrument. APPLIED SURFACE SCIENCE, Vol. 231, pp. 786–790. https://doi.org/10.1016/j.apsusc.2004.03.070

Kachan, M., Hunter, J., Kouzminov, D., Pivovarov, A., Gu, J., Stevie, F., & Griffis, D. (2004, June 15). O-2(+) versus Cs+ for high depth resolution depth profiling of III-V nitride-based semiconductor devices. APPLIED SURFACE SCIENCE, Vol. 231, pp. 684–687. https://doi.org/10.1016/j.apsusc.2004.03.211

Gu, C., Pivovarov, A., Garcia, R., Stevie, F., Griffis, D., Moran, J., … Richards, J. F. (2004). Secondary ion mass spectrometry backside analysis of barrier layers for copper diffusion. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol. 22, pp. 350–354. https://doi.org/10.1116/1.1617278

Gu, C., Garcia, R., Pivovarov, A., Stevie, F., & Griffis, D. (2004, June 15). Site-specific SIMS backside analysis. APPLIED SURFACE SCIENCE, Vol. 231, pp. 663–667. https://doi.org/10.1016/j.apsusc.2004.03.140

Hunter, J., Schueler, B. W., & Stevie, F. A. (2004, June 15). Special Issue - Secondary Ion Mass Spectrometry SIMS XIV - Proceedings of the Fourteenth International Conference on Secondary Ion Mass Spectrometry and Related Topics - San Diego, California, USA, September 14-19, 2003 - Preface. APPLIED SURFACE SCIENCE, Vol. 231, pp. 1–2. https://doi.org/10.1016/j.apsusc.2004.03.206

Pivovarov, A., Gu, C., Stevie, F., & Griffis, D. (2004, June 15). Utilization of electron impact ionization of gaseous and sputtered species in the secondary ion acceleration region of a magnetic sector SIMS instrument. APPLIED SURFACE SCIENCE, Vol. 231, pp. 781–785. https://doi.org/10.1016/j.apsusc.2004.03.069

Francois-Saint-Cyr, H. G., Stevie, F. A., McKinley, J. M., Elshot, K., Chow, L., & Richardson, K. A. (2003). Diffusion of 18 elements implanted into thermally grown SiO2. JOURNAL OF APPLIED PHYSICS, 94(12), 7433–7439. https://doi.org/10.1063/1.1624487

Pivovarov, A. L., Stevie, F. A., Griffis, D. P., & Guryanov, G. M. (2003). Optimization of secondary ion mass spectrometry detection limit for N in SiC. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 21(5), 1649–1654. https://doi.org/10.1116/1.1595108

Santiesteban, R. S., McKinley, J. M., Stevie, F. A., Flatch, P., & Rodriguez, O. (2002). In-fab techniques for baselining implant dose, contamination. Solid State Technology, 45(8), 63-.

Clark, M. H., Jones, K. S., & Stevie, F. A. (2002). Secondary ion mass spectrometry induced damage adjacent to analysis craters in silicon. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, Vol. 20, pp. 1663–1666. https://doi.org/10.1116/1.1497178

Schwarz, S. M., Kempshall, B. W., Giannuzzi, L. A., & Stevie, F. A. (2002). Utilizing the SIMS technique in the study of grain boundary diffusion along twist grain boundaries in the Cu(Ni) system. ACTA MATERIALIA, 50(20), 5079–5084. https://doi.org/10.1016/S1359-6454(02)00362-2

Ferryman, A. C., Fulghum, J. E., Giannuzzi, L. A., & Stevie, F. A. (2002). XPS analysis of FIB-milled Si. SURFACE AND INTERFACE ANALYSIS, 33(12), 907–913. https://doi.org/10.1002/sia.1448