2020 journal article

Engineering a Unified Dielectric Solution for AlGaN/GaN MOS-HFET Gate and Access Regions

IEEE TRANSACTIONS ON ELECTRON DEVICES, 67(3), 881–887.

By: F. Azam, A. Tanneeru, B. Lee & V. Misra

Source: Web Of Science
Added: April 14, 2020

2017 conference paper

Optimization of ALD high-k gate dielectric to improve AlGaN/GaN MOS-HFET DC characteristics and reliability

2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications (WIPDA), 39–43.

By: F. Azam, B. Lee & V. Misra

Source: NC State University Libraries
Added: August 6, 2018