Works (1)

2017 conference paper

Optimization of ALD high-k gate dielectric to improve AlGaN/GaN MOS-HFET DC characteristics and reliability

In 2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications (WIPDA) (pp. 39–43).

By: F. Azam, B. Lee & V. Misra

Source: NC State University Libraries
Added: August 6, 2018