Faisal Azam

Works (2)

Updated: July 5th, 2023 14:46

2020 journal article

Engineering a Unified Dielectric Solution for AlGaN/GaN MOS-HFET Gate and Access Regions

IEEE TRANSACTIONS ON ELECTRON DEVICES, 67(3), 881–887.

By: F. Azam n, A. Tanneeru n , B. Lee n & V. Misra n 

author keywords: AlGaN/GaN; atomic layer deposition (ALD); current collapse; HfO2; high electron mobility transistor (HEMT); high-k; high-temperature reverse bias (HTRB); hydroxyl; interface; MOS; HFET; oxidant; reliability; traps
Sources: Web Of Science, NC State University Libraries, ORCID
Added: April 14, 2020

2017 conference paper

Optimization of ALD high-k gate dielectric to improve AlGaN/GaN MOS-HFET DC characteristics and reliability

2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications (WIPDA), 39–43.

By: F. Azam n, B. Lee n & V. Misra n 

UN Sustainable Development Goals Color Wheel
UN Sustainable Development Goal Categories
6. Clean Water and Sanitation (OpenAlex)
Sources: NC State University Libraries, NC State University Libraries
Added: August 6, 2018

Citation Index includes data from a number of different sources. If you have questions about the sources of data in the Citation Index or need a set of data which is free to re-distribute, please contact us.

Certain data included herein are derived from the Web of Science© and InCites© (2025) of Clarivate Analytics. All rights reserved. You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.