Works (2)
Updated: July 5th, 2023 14:46
2020 journal article
Engineering a Unified Dielectric Solution for AlGaN/GaN MOS-HFET Gate and Access Regions
IEEE TRANSACTIONS ON ELECTRON DEVICES, 67(3), 881–887.
author keywords: AlGaN/GaN; atomic layer deposition (ALD); current collapse; HfO2; high electron mobility transistor (HEMT); high-k; high-temperature reverse bias (HTRB); hydroxyl; interface; MOS; HFET; oxidant; reliability; traps
Sources: Web Of Science, NC State University Libraries, ORCID
Added: April 14, 2020
2017 conference paper
Optimization of ALD high-k gate dielectric to improve AlGaN/GaN MOS-HFET DC characteristics and reliability
2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications (WIPDA), 39–43.
UN Sustainable Development Goal Categories
6. Clean Water and Sanitation
(OpenAlex)
Sources: NC State University Libraries, NC State University Libraries
Added: August 6, 2018
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