@article{azam_tanneeru_lee_misra_2020, title={Engineering a Unified Dielectric Solution for AlGaN/GaN MOS-HFET Gate and Access Regions}, volume={67}, ISBN={1557-9646}, url={https://doi.org/10.1109/TED.2020.2969394}, DOI={10.1109/TED.2020.2969394}, number={3}, journal={IEEE TRANSACTIONS ON ELECTRON DEVICES}, publisher={Institute of Electrical and Electronics Engineers (IEEE)}, author={Azam, Faisal and Tanneeru, Akhilesh and Lee, Bongmook and Misra, Veena}, year={2020}, month={Mar}, pages={881–887} }
 @inproceedings{azam_lee_misra_2017, title={Optimization of ALD high-k gate dielectric to improve AlGaN/GaN MOS-HFET DC characteristics and reliability}, DOI={10.1109/wipda.2017.8170499}, booktitle={2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications (WIPDA)}, author={Azam, F. and Lee, B. and Misra, Veena}, year={2017}, pages={39–43} }