Works (16)

2018 journal article

A thermodynamic supersaturation model for the growth of aluminum gallium nitride by metalorganic chemical vapor deposition

Journal of Applied Physics, 124(11).

Sources: NC State University Libraries, ORCID
Added: October 16, 2018

2018 journal article

Plasma enhanced chemical vapor deposition of SiO2 and SiNx on AlGaN: Band offsets and interface studies as a function of Al composition

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 36(6).

By: P. Reddy, S. Washiyama, W. Mecouch, L. Hernandez-Balderrama n, F. Kaess, M. Breckenridge n, B. Sarkar, B. Haidet ...

Sources: NC State University Libraries, ORCID
Added: December 10, 2018

2018 conference paper

Thermal conductivity of bulk and thin film beta-Ga2O3 measured by the 3 omega technique

OXIDE-BASED MATERIALS AND DEVICES IX, 10533.

Source: NC State University Libraries
Added: December 31, 2018

2017 journal article

Defect quasi Fermi level control-based CN reduction in GaN: Evidence for the role of minority carriers

Applied Physics Letters, 111(15), 152101.

Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2017 journal article

Defect-free Ni/GaN Schottky barrier behavior with high temperature stability

Applied Physics Letters, 110(1), 011603.

By: P. Reddy, B. Sarkar, F. Kaess, M. Gerhold*, E. Kohn n, R. Collazo, Z. Sitar

Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2017 journal article

High free carrier concentration in p-GaN grown on AlN substrates

Applied Physics Letters, 111(3), 032109.

By: B. Sarkar, S. Mita, P. Reddy, A. Klump, F. Kaess, J. Tweedie, I. Bryan, Z. Bryan ...

Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2017 conference paper

Material considerations for the development of III-nitride power devices

ECS Transactions, 80(7), 29–36.

By: B. Sarkar, P. Reddy, F. Kaess, B. Haidet n, J. Tweedie, S. Mita, R. Kirste, E. Kohn n ...

Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2017 journal article

Point defect reduction in MOCVD (Al)GaN by chemical potential control and a comprehensive model of C incorporation in GaN

Journal of Applied Physics, 122(24), 245702.

By: P. Reddy, S. Washiyama, F. Kaess, R. Kirste*, S. Mita*, R. Collazo, Z. Sitar

Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2016 journal article

Correlation between mobility collapse and carbon impurities in Si-doped GaN grown by low pressure metalorganic chemical vapor deposition

Journal of Applied Physics, 120(10), 105701.

By: F. Kaess, S. Mita, J. Xie, P. Reddy, A. Klump, L. Hernandez-Balderrama, S. Washiyama, A. Franke ...

Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2016 journal article

Fabrication and structural properties of AlN submicron periodic lateral polar structures and waveguides for UV-C applications

Applied Physics Letters, 108(26), 261106.

By: D. Alden, W. Guo, R. Kirste*, F. Kaess, I. Bryan, T. Troha*, A. Bagal, P. Reddy ...

Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2016 journal article

HgNO3 sensitivity of AlGaN/GaN field effect transistors functionalized with phytochelating peptides

AIP Advances, 6(6).

By: N. Rohrbaugh, L. Hernandez-Balderrama n, F. Kaess, R. Kirste, R. Collazo & A. Ivanisevic

Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2016 journal article

High reflectivity III-nitride UV-C distributed Bragg reflectors for vertical cavity emitting lasers

Journal of Applied Physics, 120(13).

Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2016 journal article

High temperature and low pressure chemical vapor deposition of silicon nitride on AlGaN: Band offsets and passivation studies

Journal of Applied Physics, 119(14), 145702.

By: P. Reddy, S. Washiyama, F. Kaess, M. Breckenridge n, L. Hernandez-Balderrama n, B. Haidet, D. Alden, A. Franke ...

Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2016 journal article

Point defect reduction in wide bandgap semiconductors by defect quasi Fermi level control

Journal of Applied Physics, 120(18), 185704.

By: P. Reddy, M. Hoffmann, F. Kaess, Z. Bryan, I. Bryan, M. Bobea, A. Klump, J. Tweedie* ...

Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2016 conference paper

Strain engineered high reflectivity DBRs in the deep UV

Gallium nitride materials and devices xi, 9748.

By: A. Franke, P. Hoffmann n, L. Hernandez-Balderrama n, F. Kaess, I. Bryan, S. Washiyama, M. Bobea, J. Tweedie ...

Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2016 journal article

The effect of illumination power density on carbon defect configuration in silicon doped GaN

Journal of Applied Physics, 120(23), 235705.

By: F. Kaess, P. Reddy, D. Alden, A. Klump, L. Hernandez-Balderrama n, A. Franke, R. Kirste*, A. Hoffmann* ...

Sources: NC State University Libraries, ORCID
Added: August 6, 2018