2021 journal article
Systematic oxygen impurity reduction in smooth N-polar GaN by chemical potential control
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 37(1).
Contributors: D. Szymanski*, K. Wang, *, R. Kirste*, S. Mita*, P. Reddy* , Z. Sitar*, R. Collazo*
2018 journal article
A thermodynamic supersaturation model for the growth of aluminum gallium nitride by metalorganic chemical vapor deposition
JOURNAL OF APPLIED PHYSICS, 124(11).
Contributors: S. Washiyama n, P. Reddy* , n, R. Kirste*, S. Mita*, R. Collazo n , Z. Sitar n
2018 journal article
Plasma enhanced chemical vapor deposition of SiO2 and SiNx on AlGaN: Band offsets and interface studies as a function of Al composition
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 36(6).
Contributors: P. Reddy n , S. Washiyama n, W. Mecouch n, L. Hernandez-Balderrama n, n, M. Hayden Breckenridge n, B. Sarkar n, B. Haidet n
2018 article
Thermal conductivity of bulk and thin film beta-Ga2O3 measured by the 3 omega technique
OXIDE-BASED MATERIALS AND DEVICES IX, Vol. 10533.
2017 article
(Invited) Material Considerations for the Development of III-nitride Power Devices
GALLIUM NITRIDE AND SILICON CARBIDE POWER TECHNOLOGIES 7, Vol. 80, pp. 29–36.
Contributors: B. Sarkar n, P. Reddy n , n, B. Haidet n, J. Tweedie*, S. Mita*, R. Kirste*, E. Kohn n, R. Collazo n , Z. Sitar n
2017 journal article
Defect quasi Fermi level control-based C-N reduction in GaN: Evidence for the role of minority carriers
APPLIED PHYSICS LETTERS, 111(15).
Contributors: P. Reddy n , n, J. Tweedie*, R. Kirste*, S. Mita*, R. Collazo n , Z. Sitar n
2017 journal article
Defect-free Ni/GaN Schottky barrier behavior with high temperature stability
APPLIED PHYSICS LETTERS, 110(1).
Contributors: P. Reddy n , B. Sarkar n, n, M. Gerhold*, E. Kohn n, R. Collazo n , Z. Sitar n
2017 journal article
High free carrier concentration in p-GaN grown on AlN substrates
APPLIED PHYSICS LETTERS, 111(3).
2017 journal article
Point defect reduction in MOCVD (Al)GaN by chemical potential control and a comprehensive model of C incorporation in GaN
Journal of Applied Physics, 122(24), 245702.
Contributors: P. Reddy n , S. Washiyama n, n, R. Kirste n, S. Mita n, R. Collazo n , Z. Sitar n
2016 journal article
Correlation between mobility collapse and carbon impurities in Si-doped GaN grown by low pressure metalorganic chemical vapor deposition
JOURNAL OF APPLIED PHYSICS, 120(10).
Contributors: S. Mita n, J. Xie n, P. Reddy n , A. Klump n, L. Hernandez-Balderrama n, S. Washiyama n, A. Franke n n,
2016 journal article
Fabrication and structural properties of AlN submicron periodic lateral polar structures and waveguides for UV-C applications
APPLIED PHYSICS LETTERS, 108(26).
Contributors: D. Alden n, W. Guo n, R. Kirste n, n, I. Bryan n, T. Troha n, A. Bagal n, P. Reddy n
2016 journal article
HgNO3 sensitivity of AlGaN/GaN field effect transistors functionalized with phytochelating peptides
AIP ADVANCES, 6(6).
2016 journal article
High reflectivity III-nitride UV-C distributed Bragg reflectors for vertical cavity emitting lasers
JOURNAL OF APPLIED PHYSICS, 120(13).
2016 journal article
High temperature and low pressure chemical vapor deposition of silicon nitride on AlGaN: Band offsets and passivation studies
JOURNAL OF APPLIED PHYSICS, 119(14).
Contributors: P. Reddy n , S. Washiyama n, n, M. Hayden Breckenridge n, L. Hernandez-Balderrama n, B. Haidet n, D. Alden n, A. Franke n
2016 journal article
Point defect reduction in wide bandgap semiconductors by defect quasi Fermi level control
JOURNAL OF APPLIED PHYSICS, 120(18).
Contributors: P. Reddy n , M. Hoffmann n, n, Z. Bryan n, I. Bryan n, M. Bobea n, A. Klump n, J. Tweedie n
2016 article
Strain engineered high reflectivity DBRs in the deep UV
GALLIUM NITRIDE MATERIALS AND DEVICES XI, Vol. 9748.
2016 journal article
The effect of illumination power density on carbon defect configuration in silicon doped GaN
JOURNAL OF APPLIED PHYSICS, 120(23).
Contributors: P. Reddy n , D. Alden n, A. Klump n, L. Hernandez-Balderrama n, A. Franke n, R. Kirste *, A. Hoffmann *, R. Collazo n , Z. Sitar n n,
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