Works (17)

Updated: July 5th, 2023 15:38

2022 journal article

Systematic oxygen impurity reduction in smooth N-polar GaN by chemical potential control

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 37(1).

By: D. Szymanski*, K. Wang, F. Kaess*, R. Kirste*, S. Mita*, P. Reddy*, Z. Sitar*, R. Collazo*

author keywords: oxygen; impurity; semiconductor; nitride; chemical potential; defect
Sources: Web Of Science, ORCID
Added: June 19, 2023

2018 journal article

A thermodynamic supersaturation model for the growth of aluminum gallium nitride by metalorganic chemical vapor deposition

JOURNAL OF APPLIED PHYSICS, 124(11).

By: S. Washiyama n, P. Reddy*, F. Kaess n, R. Kirste*, S. Mita*, R. Collazo n, Z. Sitar n

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: October 16, 2018

2018 journal article

Plasma enhanced chemical vapor deposition of SiO2 and SiNx on AlGaN: Band offsets and interface studies as a function of Al composition

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 36(6).

By: P. Reddy n, S. Washiyama n, W. Mecouch n, L. Hernandez-Balderrama n, F. Kaess n, M. Breckenridge n, B. Sarkar n, B. Haidet n ...

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: December 10, 2018

2018 article

Thermal conductivity of bulk and thin film beta-Ga2O3 measured by the 3 omega technique

OXIDE-BASED MATERIALS AND DEVICES IX, Vol. 10533.

co-author countries: Sweden 🇸🇪 United States of America 🇺🇸
author keywords: gallium oxide; thermal conductivity; thin films
Source: Web Of Science
Added: December 31, 2018

2017 article

(Invited) Material Considerations for the Development of III-nitride Power Devices

GALLIUM NITRIDE AND SILICON CARBIDE POWER TECHNOLOGIES 7, Vol. 80, pp. 29–36.

By: B. Sarkar n, P. Reddy n, F. Kaess n, B. Haidet n, J. Tweedie*, S. Mita*, R. Kirste*, E. Kohn n ...

co-author countries: United States of America 🇺🇸

Contributors: B. Sarkar n, P. Reddy n, F. Kaess n, B. Haidet n, J. Tweedie*, S. Mita*, R. Kirste*, E. Kohn n, R. Collazo n, Z. Sitar n

Sources: Web Of Science, ORCID
Added: August 6, 2018

2017 journal article

Defect quasi Fermi level control-based C-N reduction in GaN: Evidence for the role of minority carriers

APPLIED PHYSICS LETTERS, 111(15).

By: P. Reddy n, F. Kaess n, J. Tweedie*, R. Kirste*, S. Mita*, R. Collazo n, Z. Sitar n

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

2017 journal article

Defect-free Ni/GaN Schottky barrier behavior with high temperature stability

APPLIED PHYSICS LETTERS, 110(1).

By: P. Reddy n, B. Sarkar n, F. Kaess n, M. Gerhold*, E. Kohn n, R. Collazo n, Z. Sitar n

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

2017 journal article

High free carrier concentration in p-GaN grown on AlN substrates

APPLIED PHYSICS LETTERS, 111(3).

By: B. Sarkar n, S. Mita n, P. Reddy n, A. Klump n, F. Kaess n, J. Tweedie n, I. Bryan n, Z. Bryan n ...

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

2017 journal article

Point defect reduction in MOCVD (Al)GaN by chemical potential control and a comprehensive model of C incorporation in GaN

Journal of Applied Physics, 122(24), 245702.

By: P. Reddy n, S. Washiyama n, F. Kaess n, R. Kirste*, S. Mita*, R. Collazo n, Z. Sitar n

co-author countries: United States of America 🇺🇸
Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2016 journal article

Correlation between mobility collapse and carbon impurities in Si-doped GaN grown by low pressure metalorganic chemical vapor deposition

JOURNAL OF APPLIED PHYSICS, 120(10).

By: F. Kaess n, S. Mita, J. Xie n, P. Reddy n, A. Klump n, L. Hernandez-Balderrama n, S. Washiyama n, A. Franke n ...

co-author countries: Germany 🇩🇪 United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

2016 journal article

Fabrication and structural properties of AlN submicron periodic lateral polar structures and waveguides for UV-C applications

APPLIED PHYSICS LETTERS, 108(26).

By: D. Alden n, W. Guo n, R. Kirste*, F. Kaess n, I. Bryan n, T. Troha*, A. Bagal n, P. Reddy n ...

co-author countries: Germany 🇩🇪 Slovenia 🇸🇮 United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

2016 journal article

HgNO3 sensitivity of AlGaN/GaN field effect transistors functionalized with phytochelating peptides

AIP ADVANCES, 6(6).

By: N. Rohrbaugh n, L. Hernandez-Balderrama n, F. Kaess n, R. Kirste n, R. Collazo n & A. Ivanisevic n

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

2016 journal article

High reflectivity III-nitride UV-C distributed Bragg reflectors for vertical cavity emitting lasers

JOURNAL OF APPLIED PHYSICS, 120(13).

By: A. Franke n, M. Hoffmann n, R. Kirste*, M. Bobea n, J. Tweedie*, F. Kaess n, M. Gerhold, R. Collazo n, Z. Sitar n

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

2016 journal article

High temperature and low pressure chemical vapor deposition of silicon nitride on AlGaN: Band offsets and passivation studies

JOURNAL OF APPLIED PHYSICS, 119(14).

By: P. Reddy n, S. Washiyama n, F. Kaess n, M. Breckenridge n, L. Hernandez-Balderrama n, B. Haidet n, D. Alden n, A. Franke n ...

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

2016 journal article

Point defect reduction in wide bandgap semiconductors by defect quasi Fermi level control

JOURNAL OF APPLIED PHYSICS, 120(18).

By: P. Reddy n, M. Hoffmann n, F. Kaess n, Z. Bryan n, I. Bryan n, M. Bobea n, A. Klump n, J. Tweedie* ...

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

2016 article

Strain engineered high reflectivity DBRs in the deep UV

GALLIUM NITRIDE MATERIALS AND DEVICES XI, Vol. 9748.

By: A. Franke n, P. Hoffmann n, L. Hernandez-Balderrama n, F. Kaess n, I. Bryan n, S. Washiyama n, M. Bobea n, J. Tweedie n ...

co-author countries: United States of America 🇺🇸
author keywords: Distributed Bragg Reflector (DBR); strain relaxation; MOCVD; AlGaN; Nitride
Sources: Web Of Science, ORCID
Added: August 6, 2018

2016 journal article

The effect of illumination power density on carbon defect configuration in silicon doped GaN

JOURNAL OF APPLIED PHYSICS, 120(23).

By: F. Kaess n, P. Reddy n, D. Alden n, A. Klump n, L. Hernandez-Balderrama n, A. Franke n, R. Kirste*, A. Hoffmann* ...

co-author countries: Germany 🇩🇪 United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

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