Gerd Duscher

Optimization of homoepitaxially grown AlGaN/GaN heterostructures

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 207(10), 2292–2299.

Relationship between 4H-SiC/SiO2 transition layer thickness and mobility

APPLIED PHYSICS LETTERS, 95(3).

Detailed arsenic concentration profiles at Si/SiO2 interfaces

Journal of Applied Physics, 104(4).

Direct Observation of Inversion Domain Boundaries of GaN onc-Sapphire at Sub-ångstrom Resolution

Advanced Materials, 20(11), 2162–2165.

Interfacial and solvent effects govern the formation of tris(dibenzylidenacetone)dipalladium(0) microstructures

LANGMUIR, 24(15), 7803–7809.

Self-assembled three-dimensional Cu-Ge nanoweb composite

NANOTECHNOLOGY, 19(13).

Transition layers at the SiO2/SiC interface

Applied Physics Letters, 93(2).

stee Distribution and segregation of arsenic at the SiO2/Si interface

Journal of Applied Physics, 104(2).

Chemical composition changes across the interface of amorphous LaScO3 on Si (001)

Applied Physics Letters, 91(15).

Quantitative nanoscale local strain profiling in embedded SiGe metal-oxide-semiconductor structures

APPLIED PHYSICS LETTERS, 90(19).

The mechanism for polarity inversion of GaN via a thin AlN layer: Direct experimental evidence

APPLIED PHYSICS LETTERS, 91(20).

The role of selection pressure in RNA-mediated evolutionary materials synthesis

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 129(49), 15340–15346.

Thermal annealing effect on the interface structure of high-kappa LaScO3 on silicon

Applied Physics Letters, 91(15).

Three-dimensional geometry of nanometer-scale AlN pits: A new template for quantum dots?

Advanced Materials, 20(1), 134-.

Transmission electron microscopy studies of regrown GaN Ohmic contacts on patterned substrates for metal oxide semiconductor field effect transistor applications

APPLIED PHYSICS LETTERS, 90(20).

Effect of Pb on the mechanical properties of nanocrystalline Al

SCRIPTA MATERIALIA, 55(2), 155–158.

Gold and silica-coated gold nanoparticles as thermographic labels for DNA detection

ANALYTICAL CHEMISTRY, 78(10), 3282–3288.

Surface plasmon resonance in conducting metal oxides

JOURNAL OF APPLIED PHYSICS, 100(5).

A new understanding of near-threshold damage for 200 keV irradiation in silicon

JOURNAL OF MATERIALS SCIENCE, 40(14), 3639–3650.

Ab initio identification of the nitrogen diffusion mechanism in silicon

Physical Review Letters, 95(2).

Atomic resolution imaging of Au nanocluster dispersed in TiO2, SrTiO3, and MgO

JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 88(11), 3184–3191.

Direct imaging of quantum antidots in MgO dispersed with Au nanoclusters

Applied Physics Letters, 87(15), 153104.

Low-temperature resistance anomaly at SrTiO3 grain boundaries: Evidence for an interface-induced phase transition

Physical Review Letters, 95(19).

Segregation and enhanced diffusion of nitrogen in silicon induced by low energy ion bombardment

JOURNAL OF APPLIED PHYSICS, 97(8).

Self-assembling of nanocavities in TiO2 dispersed with Au nanoclusters

Physical Review. B, Condensed Matter and Materials Physics, 72(24).

Void formation during early stages of passivation: Initial oxidation of iron nanoparticles at room temperature

Journal of Applied Physics, 98(9).

"Umbrella"-like precipitates in nitrogen-doped Czochralski silicon wafers

APPLIED PHYSICS LETTERS, 84(11), 1889–1891.

Bismuth-induced embrittlement of copper grain boundaries

NATURE MATERIALS, 3(9), 621–626.

Copper segregation to the Sigma 5 (310)/[001] symmetric tilt grain boundary in aluminum

INTERFACE SCIENCE, Vol. 12, pp. 165–174.

Direct observation of substitutional Au atoms in SrTiO3

Physical Review. B, Condensed Matter and Materials Physics, 70(17).

Microstructure of precipitated au nanoclusters in TiO2

JOURNAL OF APPLIED PHYSICS, 95(12), 8185–8193.

Modeling and characterization of atomically sharp "perfect" Ge/SiO2 interfaces

Materials Science & Engineering. B, Solid-State Materials for Advanced Technology, 114-15(Dec 15 2004), 156–161.

Precipitation of Au nanoclusters in SrTiO3 by ion implantation

JOURNAL OF APPLIED PHYSICS, 95(9), 5060–5068.

Aberration-corrected scanning transmission electron microscopy: the potential for nano- and interface science

INTERNATIONAL JOURNAL OF MATERIALS RESEARCH, 94(4), 350–357.

Aberration-corrected scanning transmission electron microscopy: the potential for nano- and interface science

Zeitschrift Fur MetallkundeAmerican Journal of Physiology, 94(4), 350–357.

Effect of microstructure on diffusion of copper in TiN films

JOURNAL OF APPLIED PHYSICS, 93(9), 5210–5214.

Formation of nanoscale voids and related metallic impurity gettering in high-energy ion-implanted and annealed epitaxial silicon

APPLIED PHYSICS LETTERS, 83(7), 1367–1369.

In situ point defect generation and agglomeration during electron-beam irradiation of nitrogen-doped Czochralski silicon

ELECTROCHEMICAL AND SOLID STATE LETTERS, 6(11), G134–G136.

Nano-scale analysis of precipitates in nitrogen-doped Czochralski silicon

Rozgonyi, G. A., Karoui, A., Kvit, A., & Duscher, G. (2003, April). MICROELECTRONIC ENGINEERING, Vol. 66, pp. 305–313.

Plasma plume characteristics and properties of pulsed laser deposited diamond-like carbon films

Journal of Applied Physics, 93(6), 3627–3634.

Synthesis and atomic-level characterization of Ni nanoparticles in Al2O3 matrix

APPLIED PHYSICS LETTERS, 81(22), 4204–4206.

Z-contrast imaging of dislocation cores at the GaAs/Si interface

APPLIED PHYSICS LETTERS, 81(15), 2728–2730.

Consequence of nanometer-scale property variations to macroscopic properties of CrOCN thin films

JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 84(12), 2873–2881.

Cu, Nb and V on (110) TiO2 (rutile): epitaxy and chemical reactions

Wagner, T., Marien, J., & Duscher, G. (2001, November 1). THIN SOLID FILMS, Vol. 398, pp. 419–426.