Griff L. Bilbro

A Five-Parameter Model of the AlGaN/GaN HFET

IEEE TRANSACTIONS ON ELECTRON DEVICES, 62(4), 1157–1162.

Modeling of the Gate Leakage Current in AlGaN/GaN HFETs

IEEE TRANSACTIONS ON ELECTRON DEVICES, 61(4), 1014–1021.

Physics of gate leakage current in N-polar InAlN/GaN heterojunction field effect transistors

JOURNAL OF APPLIED PHYSICS, 116(16).

A Compact Physical AlGaN/GaN HFET Model

IEEE TRANSACTIONS ON ELECTRON DEVICES, 60(2), 639–645.

Physics based modeling of gate leakage current due to traps in AlGaN/GaN HFETs

SOLID-STATE ELECTRONICS, 80, 23–27.

A Simplified Physical Model of RF Channel Breakdown in AlGaN/GaN HFETs

IEEE TRANSACTIONS ON ELECTRON DEVICES, 59(11), 2973–2978.

Large-signal FET Models and a New AlGaN/GaN HFET model for power amplifier design

2012 IEEE International Conference on Wireless Information Technology and Systems (ICWITS).

Predicting the performance of a power amplifier using large-signal circuit simulations of an AlGaN/GaN HFET model

GALLIUM NITRIDE MATERIALS AND DEVICES IV, Vol. 7216.

Theory of space charge limited regime of thermionic energy converter with negative electron affinity emitter

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 27(3), 1132–1141.

Considerations for a high-performance thermionic energy conversion device based on a negative electron affinity emitter

PHYSICAL REVIEW B, 76(24).

Localized emission from flat diamond cathodes

DIAMOND AND RELATED MATERIALS, 15(9), 1418–1423.

Nonlinear source resistance in high-voltage microwave AlGaN/GaN HFETs

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 54(5), 2061–2067.

RF knee walkout and source access region of unpassivated HFETs

Electronics Letters, 42(24), 1425–1427.

The effect of Schottky barrier lowering and nonplanar emitter geometry on the performance of a thermionic energy converter

DIAMOND AND RELATED MATERIALS, Vol. 15, pp. 870–874.

Using negative electron affinity diamond emitters to mitigate space charge in vacuum thermionic energy conversion device

DIAMOND AND RELATED MATERIALS, Vol. 15, pp. 2082–2085.

In situ selectivity and thickness monitoring during selective silicon epitaxy using quadrupole mass spectrometry and wavelets

IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, 18(1), 112–121.

Microwave AlGaN/GaN HFEVs

IEEE MICROWAVE MAGAZINE, 6(1), 56–66.

Sample-sort simulated annealing

IEEE TRANSACTIONS ON SYSTEMS MAN AND CYBERNETICS PART B-CYBERNETICS, 35(3), 625–632.

Demosaicking methods for Bayer color arrays

JOURNAL OF ELECTRONIC IMAGING, 11(3), 306–315.

Focused local learning with wavelet neural networks

IEEE TRANSACTIONS ON NEURAL NETWORKS, 13(2), 304–319.

Theory of electrodeposition of diamond nanoparticles

DIAMOND AND RELATED MATERIALS, 11(8), 1572–1577.

Theory of nanotip formation

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 20(3), 757–761.

Comparison of a genetic algorithm with a simulated annealing algorithm for the design of an ATM network

IEEE COMMUNICATIONS LETTERS, 4(8), 267–269.

Integrated circuits having cooperative ring oscillator clock circuits therein to minimize clock skew

Washington, DC: U.S. Patent and Trademark Office.

Nongeometric field enhancement in semiconducting cold cathodes and in metal-insulator-semiconductor structures

APPLIED PHYSICS LETTERS, 76(7), 891–893.

Systems and methods for using diffraction patterns to determine radiation intensity values for areas between and along adjacent sensors of compound sensor arrays

Washington, DC: U.S. Patent and Trademark Office.

Compound image sensor array having staggered array of tapered optical fiber bundles

Washington, DC: U.S. Patent and Trademark Office.

Convolution, deconvolution, and mean field annealing suitable for analog VLSI

IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-ANALOG AND DIGITAL SIGNAL PROCESSING, 46(2), 120–128.

Phase balancing using simulated annealing

IEEE TRANSACTIONS ON POWER SYSTEMS, 14(4), 1508–1513.

Simulation of room temperature thermionic emission from AlxGa1- xN negative electron affinity cathodes

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 17(2), 552–556.

Simulation of thermionic emission from aluminum gallium nitride cathodes at elevated temperatures

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 17(5), 1987–1992.

Call admission control schemes and ATM network topological design

EUROPEAN JOURNAL OF OPERATIONAL RESEARCH, 111(2), 393–404.

DC I-V characteristics and RF performance of a 4H-SiC JFET at 773 K

IEEE TRANSACTIONS ON ELECTRON DEVICES, 45(9), 2072–2074.

Discontinuity-preserving vector smoothing of multivariate MR images using vector mean field annealing

JOURNAL OF MATHEMATICAL IMAGING AND VISION, 9(3), 199–212.

Left-ventricle boundary detection from nuclear medicine images

JOURNAL OF DIGITAL IMAGING, 11(1), 10–20.

Performance evaluation of filtered backprojection reconstruction and iterative reconstruction methods for PET images

COMPUTERS IN BIOLOGY AND MEDICINE, 28(1), 13–25.

Performance of local power control in peer-to-peer impulse radio networks with bursty traffic

TR (Center for Advanced Computing and Communication), (5).