@article{yang_sekely_satapathy_allion_barletta_haber_holland_muth_pavlidis_stucci_2025, title={Characterization of 4H-SiC Low Gain Avalanche Detectors (LGADs)}, DOI={10.1016/j.nima.2025.170873}, journal={Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment}, author={Yang, Tao and Sekely, Ben and Satapathy, Yashas and Allion, Greg and Barletta, Philip and Haber, Carl and Holland, Steve and Muth, John F. and Pavlidis, Spyridon and Stucci, Stefania}, year={2025}, month={Aug} }
 @article{yang_satapathy_sekely_tishelman-charny_allion_atar_barletta_haber_holland_muth_et al._2025, title={Time Resolution Characterization of 4H-SiC LGADs With a <sup>90</sup> Sr Source}, DOI={10.1109/tns.2025.3646114}, abstractNote={This work presents timing measurements of 4H-SiC Low Gain Avalanche Detectors (4H-SiC LGADs) using beta particles from a <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">90</sup>Sr source. The 4H-SiC LGADs exhibit fast signal responses, and a time resolution of 61 ps was achieved, comparable to that of standard Si LGADs. The present limitation in the time resolution of 4H-SiC LGADs appears to stem from limited charge generation. Nevertheless, their higher voltage tolerance and faster carrier drift suggest that, with increased charge collection, their timing performance could approach or even surpass that of Si LGADs. These results demonstrate the strong potential of 4H-SiC LGADs as a robust platform for precision timing in future 4D tracking detectors, while also highlighting that signal charge is the dominant factor currently limiting their performance, indicating that further optimization of gain and drift structures will be essential for future development.}, journal={IEEE Transactions on Nuclear Science}, author={Yang, Tao and Satapathy, Yashas and Sekely, Ben J. and Tishelman-Charny, Abraham and Allion, Greg and Atar, Gil and Barletta, Philip and Haber, Carl and Holland, Steve and Muth, John F. and et al.}, year={2025}, month={Dec} }
 @article{yang_sekely_satapathy_allion_atar_barletta_haber_holland_muth_pavlidis_et al._2025, title={Ultra-Fast 4H-SiC LGAD With Etched Termination and Field Plate}, DOI={10.1109/LED.2025.3548509}, abstractNote={Silicon carbide Low Gain Avalanche Detectors (4H-SiC LGADs), exhibiting an ultra-fast time response and excellent time resolution, are reported. Via TCAD simulations, the use of field plates is proposed to suppress the high electric field caused by the negative bevel-etched angle. Experimental measurements confirm that the field plate significantly increases the breakdown voltage. Gain and time resolution are measured by using the ultraviolet transient current technique (UV-TCT), showing that 4H-SiC LGADs possess excellent timing performance, with a time resolution better than 35 ps in response to an injected laser signal tuned to represent a single minimum ionizing particle (MIP) at room temperature. Additionally, the gain suppression effect is observed in the 4H-SiC LGAD for the first time.}, journal={IEEE Electron Device Letters}, author={Yang, Tao and Sekely, Ben J. and Satapathy, Yashas and Allion, Greg and Atar, Gil and Barletta, Philip and Haber, Carl and Holland, Steve and Muth, John F. and Pavlidis, Spyridon and et al.}, year={2025}, month={Mar} }