2018 conference paper

An accurate calorimetric method for measurement of switching losses in silicon carbide (SiC) MOSFETs

An accurate calorimetrie method for measurement of switching losses in silicon carbide (SiC) MOSFETs. Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC, 2018-March, 1695–1700.

By: A. Anurag n, S. Acharya n, Y. Prabowo n, G. Gohil*, H. Kassa n & S. Bhattacharya n

Contributors: A. Anurag n, S. Acharya n, Y. Prabowo n, G. Gohil*, H. Kassa n & S. Bhattacharya n

topics (OpenAlex): Silicon Carbide Semiconductor Technologies; Semiconductor materials and devices; Multilevel Inverters and Converters
Sources: NC State University Libraries, NC State University Libraries, ORCID
Added: August 6, 2018

Citation Index includes data from a number of different sources. If you have questions about the sources of data in the Citation Index or need a set of data which is free to re-distribute, please contact us.

Certain data included herein are derived from the Web of Science© and InCites© (2025) of Clarivate Analytics. All rights reserved. You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.