John Hauser

Samberg, J. P., Carlin, C. Z., Bradshaw, G. K., Colter, P. C., Harmon, J. L., Allen, J. B., … Bedair, S. M. (2013). Effect of GaAs interfacial layer on the performance of high bandgap tunnel junctions for multijunction solar cells. APPLIED PHYSICS LETTERS, 103(10). https://doi.org/10.1063/1.4819917

Hauser, J., Carlin, Z., Harmon, J., Bradshaw, G., Samberg, J., Colter, P., & Bedair, S. (2013). Modeling an InGaP/AlGaAs tunnel junction containing an AlAs diffusion barrier. 2013 ieee 39th photovoltaic specialists conference (pvsc), 2082–2085. https://doi.org/10.1109/pvsc.2013.6744883

Hauser, J. R., Carlin, Z., & Bedair, S. M. (2010). Modeling of tunnel junctions for high efficiency solar cells. APPLIED PHYSICS LETTERS, 97(4). https://doi.org/10.1063/1.3469942

Hauser, JR. (2005). A new and improved physics-based model for MOS transistors. IEEE TRANSACTIONS ON ELECTRON DEVICES, 52(12), 2640–2647. https://doi.org/10.1109/ted.2005.859623

Young, C. D., Zeitzoff, P., Brown, G. A., Bersuker, G., Lee, B. H., & Hauser, JR. (2005). Intrinsic mobility evaluation of high-kappa gate dielectric transistors using pulsed I-d-V-g. IEEE ELECTRON DEVICE LETTERS, 26(8), 586–589. https://doi.org/10.1109/LED.2005.852746

Wartenberg, S. A., & Hauser, J. R. (2005). Substrate voltage and accumulation-mode MOS varactor capacitance. IEEE Transactions on Electron Devices, 52(7), 1563–1567. https://doi.org/10.1109/TED.2005.850953

Lee, M. H., Park, H. S., Yoon, K. J., & Hauser, P. J. (2004). Enhancing the durability of linen-like properties of low temperature mercerized cotton. Textile Research Journal, 74(2), 146–154. https://doi.org/10.1177/004051750407400211

Wartenberg, S. A., & Hauser, JR. (2003). The epHEMT gate at microwave frequencies. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 51(6), 1718–1723. https://doi.org/10.1109/TMTT.2003.812573

Osburn, C. M., Kim, I., Han, S. K., De, I., Yee, K. F., Gannavaram, S., … Ozturk, M. C. (2002). Vertically scaled MOSFET gate stacks and junctions: How far are we likely to go? IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 46(2-3), 299–315. https://doi.org/10.1147/rd.462.0299

Weintraub, C. E., Vogel, E., Hauser, JR, Yang, N., Misra, V., Wortman, J. J., … Masson, P. (2001). Study of low-frequency charge pumping on thin stacked dielectrics. IEEE TRANSACTIONS ON ELECTRON DEVICES, 48(12), 2754–2762. https://doi.org/10.1109/16.974700

Min, K., Lamb, H. H., & Hauser, JR. (2001). Time-dependent Si etch behavior and its effect on oxide/Si selectivity in CF4+D-2 electron cyclotron resonance plasma etching. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 19(3), 695–700. https://doi.org/10.1116/1.1371318

Ahmed, K., Wortman, J. J., & Hauser, JR. (2000). A two-dimensional numerical simulation of pulsed drain current transients in weak inversion and application to interface trap characterization on small geometry MOSFETs with ultrathin oxides. IEEE TRANSACTIONS ON ELECTRON DEVICES, 47(11), 2236–2237. https://doi.org/10.1109/16.877189

Ahmed, K., Ibok, E., & Hauser, J. (2000). Analytic model of parasitic capacitance attenuation in CMOS devices with hyper-thin oxides. ELECTRONICS LETTERS, 36(20), 1699–1700. https://doi.org/10.1049/el:20001160

Ahmed, K., Ibok, E., Bains, G., Chi, D., Ogle, B., Wortman, J. J., & Hauser, JR. (2000). Comparative physical and electrical metrology of ultrathin oxides in the 6 to 1.5 nm regime. IEEE TRANSACTIONS ON ELECTRON DEVICES, 47(7), 1349–1354. https://doi.org/10.1109/16.848276

Wang, Z. G., Parker, C. G., Hodge, D. W., Croswell, R. T., Yang, N., Misra, V., & Hauser, JR. (2000). Effect of polysilicon gate type on the flatband voltage shift for ultrathin oxide-nitride gate stacks. IEEE ELECTRON DEVICE LETTERS, 21(4), 170–172. https://doi.org/10.1109/55.830971

Yang, N., Henson, W. K., Hauser, JR, & Wortman, J. J. (2000). Estimation of the effects of remote charge scattering on electron mobility of n-MOSFET's with ultrathin gate oxides. IEEE TRANSACTIONS ON ELECTRON DEVICES, 47(2), 440–447. https://doi.org/10.1109/16.822292

Ahmed, K., De, I., Osburn, C., Wortman, J., & Hauser, J. (2000). Limitations of the modified shift-and-ratio technique for extraction of the bias dependence of L-eff and R-sd of LDD MOSFET's. IEEE TRANSACTIONS ON ELECTRON DEVICES, 47(4), 891–895. https://doi.org/10.1109/16.831010

Holten, W. C., Hauser, J. R., Kim, K. W., & Lynch, W. T. (2000). Overview of semiconductor devices. In Y. Nishi & R. Doering (Eds.), Handbook of semiconductor manufacturing technology. New York: Marcel Dekker.

Carter, R. J., Hauser, JR, & Nemanich, R. J. (2000). Surface residue island nucleation in anhydrous HF/alcohol vapor processing of Si surfaces. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 147(9), 3512–3518. https://doi.org/10.1149/1.1393929

Henson, W. K., Ahmed, K. Z., Vogel, E. M., Hauser, JR, Wortman, J. J., Venables, R. D., … Venables, D. (1999). Estimating oxide thickness of tunnel oxides down to 1.4 nm using conventional capacitance-voltage measurements on MOS capacitors. IEEE ELECTRON DEVICE LETTERS, 20(4), 179–181. https://doi.org/10.1109/55.753759

Ibok, E., Ahmed, K., Hao, M. Y., Ogle, B., Wortman, J. J., & Hauser, JR. (1999). Gate quality ultrathin (2.5 nm) PECVD deposited oxynitride and nitrided oxide dielectrics. IEEE ELECTRON DEVICE LETTERS, 20(9), 442–444. https://doi.org/10.1109/55.784446

Ahmed, K., Ibok, E., Yeap, G. C. F., Xiang, Q., Ogle, B., Wortman, J. J., & Hauser, JR. (1999). Impact of tunnel currents and channel resistance on the characterization of channel inversion layer charge and polysilicon-gate depletion of sub-20-angstrom gate oxide MOSFET's. IEEE TRANSACTIONS ON ELECTRON DEVICES, 46(8), 1650–1655. https://doi.org/10.1109/16.777153

Misra, V., Lazar, H., Wang, Z., Wu, Y., Niimi, H., Lucovsky, G., … Hauser, J. R. (1999). Interfacial properties of ultrathin pure silicon nitride formed by remote plasma enhanced chemical vapor deposition. Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 17(4), 1836–1839.

Yang, N., Henson, W. K., Hauser, JR, & Wortman, J. J. (1999). Modeling study of ultrathin gate oxides using direct tunneling current and capacitance-voltage measurements in MOS devices. IEEE TRANSACTIONS ON ELECTRON DEVICES, 46(7), 1464–1471. https://doi.org/10.1109/16.772492

Shanware, A., Massoud, H. Z., Vogel, E., Henson, K., Hauser, JR, & Wortman, J. J. (1999, September). Modeling the trends in valence-band electron tunneling in NMOSFETs with ultrathin SiO2 and SiO2/Ta2O5 dielectrics with oxide scaling. MICROELECTRONIC ENGINEERING, Vol. 48, pp. 295–298. https://doi.org/10.1016/s0167-9317(99)00392-5

Shanware, A., Massoud, H. Z., Acker, A., Li, V. Z. Q., Mirabedini, M. R., Henson, K., … Wortman, J. J. (1999, September). The effects of Ge content in poly-Si1-xGex gate material on the tunneling barrier in PMOS devices. MICROELECTRONIC ENGINEERING, Vol. 48, pp. 39–42. https://doi.org/10.1016/s0167-9317(99)00333-0

Srivastava, A., Heinisch, H. H., Vogel, E., Parker, C., Osburn, C. M., Masnari, N. A., … Hauser, JR. (1998). Evaluation of 2.0 nm grown and deposited dielectrics in 0.1 mu m PMOSFETs. RAPID THERMAL AND INTEGRATED PROCESSING VII, Vol. 525, pp. 163–170. https://doi.org/10.1557/proc-525-163

Vogel, E. M., Ahmed, K. Z., Hornung, B., Henson, W. K., McLarty, P. K., Lucovsky, G., … Wortman, J. J. (1998). Modeled tunnel currents for high dielectric constant dielectrics. IEEE TRANSACTIONS ON ELECTRON DEVICES, 45(6), 1350–1355. https://doi.org/10.1109/16.678572

Lucovsky, G., Niimi, H., Wu, Y., Parker, C. R., & Hauser, JR. (1998). Optimization of nitrided gate dielectrics by plasma-assisted and rapid thermal processing. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, Vol. 16, pp. 1721–1729. https://doi.org/10.1116/1.581291

Parker, C. G., Lucovsky, G., & Hauser, JR. (1998). Ultrathin oxide-nitride gate dielectric MOSFET's. IEEE ELECTRON DEVICE LETTERS, 19(4), 106–108. https://doi.org/10.1109/55.663529

Hauser, JR. (1997). Bias sweep rate effects on quasi-static capacitance of MOS capacitors. IEEE TRANSACTIONS ON ELECTRON DEVICES, 44(6), 1009–1012. https://doi.org/10.1109/16.585558

Tian, H., Kim, K. W., Hauser, J. R., Masnari, N. A., & Littlejohn, M. A. (1995). Effects of profile doped elevated source/drain structures on deep-submicron MOSFETs. Solid-State Electronics, 38(3), 573–579. https://doi.org/10.1016/0038-1101(94)00160-H

Hauser, J., Sorrell, F., & Wortman, J. (1995). Three-zone rapid thermal processing system utilizing wafer edge heating means. Washington, DC: U.S. Patent and Trademark Office.

Tian, H., Hulfachor, R. B., Ellis-Monaghan, J. J., Kim, K. W., Littlejohn, M. A., Hauser, J. R., & Masnari, N. A. (1994). An evaluation of super-steep-retrograde channel doping for deep-submicron MOSFET applications. IEEE Transactions on Electron Devices, 41(10), 1880–1882. https://doi.org/10.1109/16.324605

MASNARI, N. A., HAUSER, JR, LUCOVSKY, G., MAHER, D. M., MARKUNAS, R. J., OZTURK, M. C., & WORTMAN, J. J. (1993). CENTER FOR ADVANCED ELECTRONIC MATERIALS PROCESSING. PROCEEDINGS OF THE IEEE, 81(1), 42–59. https://doi.org/10.1109/JPROC.1993.752025

Wortman, J., Sorrell, F., Hauser, J., & Fordham, M. (1993). Conical rapid thermal processing apparatus. Washington, DC: U.S. Patent and Trademark Office.

Glen L. Urban, J. R. H. (1993). Design and marketing of new products. Englewood Cliffs, NJ: Prentice Hall.

Glen L. Urban, J. R. H., & Dholakia, N. (1987). Essentials of new product management. Englewood Cliffs, NJ: Prentice-Hall.

ARORA, N. D., HAUSER, JR, & ROULSTON, D. J. (1982). ELECTRON AND HOLE MOBILITIES IN SILICON AS A FUNCTION OF CONCENTRATION AND TEMPERATURE. IEEE TRANSACTIONS ON ELECTRON DEVICES, 29(2), 292–295. https://doi.org/10.1109/t-ed.1982.20698

Glen L. Urban, J. R. H. (1980). Design and marketing of new products. Englewood Cliffs, NJ: Prentice-Hall.

LITTLEJOHN, M. A., HAUSER, JR, & GLISSON, T. H. (1977). VELOCITY-FIELD CHARACTERISTICS OF GAAS WITH GAMMA-6(C)-L6(C)-X6(C) CONDUCTION-BAND ORDERING. JOURNAL OF APPLIED PHYSICS, 48(11), 4587–4590. https://doi.org/10.1063/1.323516