Haotian Xue

College of Engineering

Works (9)

Updated: September 10th, 2025 05:04

2025 article

Optical and structural characteristics of AlInN/GaN superlattices with varying AlInN fractions

Xue, H., Palmese, E., Sekely, B. J., Gray-Boneker, D., Gonzalez, A., Rogers, D. J., … Wierer, J. J., Jr. (2025, January 6). Journal of Crystal Growth, Vol. 652.

By: H. Xue n, E. Palmese n, B. Sekely n, D. Gray-Boneker n, A. Gonzalez n, D. Rogers n, B. Little n, F. Kish n, J. Muth n, J. Wierer n 

topics (OpenAlex): GaN-based semiconductor devices and materials; Ga2O3 and related materials; ZnO doping and properties
Sources: Web Of Science, NC State University Libraries
Added: February 10, 2025

2025 article

Process temperature dependence of sputtered MgO/n-type GaN metal–oxide–semiconductor capacitors

Shvilberg, L., Xue, H., Palmese, E. J., Heinrich, H. H., Kuan, J., Abad, G. C., … Ihlefeld, J. F. (2025, July 22). Journal of Applied Physics, Vol. 138.

By: L. Shvilberg *, H. Xue n, E. Palmese n, H. Heinrich *, J. Kuan*, G. Abad*, N. Shukla *, S. McDonnell *, J. Wierer n , J. Ihlefeld *

topics (OpenAlex): GaN-based semiconductor devices and materials; Semiconductor materials and devices; Ga2O3 and related materials
Sources: Web Of Science, ORCID, NC State University Libraries
Added: July 22, 2025

2024 article

Comment on “Structural and optical characterization of thin AlInN films on c-plane GaN substrates” [J. Appl. Phys. 134, 075301 (2023)]

Rogers, D. J., Xue, H., Palmese, E., & Wierer, J. J. (2024, October 24). Journal of Applied Physics, Vol. 136.

By: D. Rogers n, H. Xue n, E. Palmese  n & J. Wierer n 

topics (OpenAlex): GaN-based semiconductor devices and materials; Acoustic Wave Resonator Technologies; ZnO doping and properties
Sources: Web Of Science, ORCID, NC State University Libraries
Added: October 24, 2024

2024 article

Growth and characterization of AlInN/GaN superlattices

Xue, H., Palmese, E., Sekely, B. J., Little, B. D., Kish, F. A., Muth, J. F., & Wierer, J. J. (2024, January 11). Journal of Crystal Growth, Vol. 630.

By: H. Xue n, E. Palmese n, B. Sekely n, B. Little n, F. Kish n, J. Muth n, J. Wierer n 

topics (OpenAlex): GaN-based semiconductor devices and materials; Ga2O3 and related materials; Metal and Thin Film Mechanics
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14. Life Below Water (OpenAlex)
Sources: Web Of Science, ORCID, NC State University Libraries
Added: January 11, 2024

2024 article

High Bandwidth GaN-Based Micro-LEDs at Temperatures up to 400  ∘ C

Rogers, D. J., Xue, H., Kish, F. A., Hsiao, F.-C., Pezeshki, B., Tselikov, A., & Wierer, J. J. (2024, July 29). IEEE Photonics Technology Letters.

By: D. Rogers n, H. Xue n, F. Kish n, F. Hsiao n, B. Pezeshki, A. Tselikov, J. Wierer n 

author keywords: Bandwidth; Temperature measurement; Current density; Modulation; Light emitting diodes; Temperature; Vertical cavity surface emitting lasers; GaN; micro light-emitting diodes (micro-LEDs); modulation; optical communication; differential carrier lifetime
topics (OpenAlex): GaN-based semiconductor devices and materials; Semiconductor Quantum Structures and Devices; ZnO doping and properties
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UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Sources: Web Of Science, ORCID
Added: August 1, 2024

2024 article

Light-Triggered, Enhancement-Mode AlInN/GaN HEMTs With Sub-Microsecond Switching Times

Palmese, E., Xue, H., Rogers, D. J., & Wierer, J. J. (2024, August 7). IEEE Electron Device Letters, Vol. 45, pp. 1903–1906.

By: E. Palmese n, H. Xue n, D. Rogers n & J. Wierer n 

author keywords: Enhancement-mode HEMTs; light triggered; AlInN/GaN; AlInN oxidation
topics (OpenAlex): GaN-based semiconductor devices and materials; Acoustic Wave Resonator Technologies; Semiconductor Quantum Structures and Devices
Sources: Web Of Science, ORCID, NC State University Libraries
Added: August 8, 2024

2023 article

Electrical Performance of Sputtered Epitaxial Magnesium Oxide on n-Type Gallium Nitride Metal–Oxide–Semiconductor Devices

Shvilberg, L., Mimura, T., Xue, H., Wierer, J. J., Paisley, E. A., Heinrich, H., & Ihlefeld, J. F. (2023, May 22). IEEE Transactions on Electron Devices, Vol. 5.

By: L. Shvilberg *, T. Mimura *, H. Xue n, J. Wierer n , E. Paisley*, H. Heinrich *, J. Ihlefeld *

author keywords: Capacitance measurement; dielectric films; gallium compounds; MIS capacitors; semiconductor-insulator interfaces; sputtering
topics (OpenAlex): GaN-based semiconductor devices and materials; Semiconductor materials and devices; Ga2O3 and related materials
Sources: Web Of Science, ORCID, NC State University Libraries
Added: July 3, 2023

2023 article

Enhancement-Mode AlInN/GaN High-Electron-Mobility Transistors Enabled by Thermally Oxidized Gates

Palmese, E., Xue, H., Pavlidis, S., & Wierer, J. J. (2023, December 21). IEEE Transactions on Electron Devices, Vol. 12.

By: E. Palmese n, H. Xue n, S. Pavlidis n & J. Wierer n 

author keywords: HEMTs; Logic gates; MODFETs; Oxidation; Gallium nitride; Fabrication; Threshold voltage; AlInN; enhancement mode; gallium nitride (GaN); high-electron-mobility transistors (HEMTs); thermal oxidation
topics (OpenAlex): GaN-based semiconductor devices and materials; Ga2O3 and related materials; Semiconductor Quantum Structures and Devices
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UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Sources: Web Of Science, ORCID, NC State University Libraries
Added: December 22, 2023

2023 article

Structural and optical characterization of thin AlInN films on c-plane GaN substrates

Xue, H., Palmese, E., Song, R., Chowdhury, M. I., Strandwitz, N. C., & Wierer, J. J. (2023, August 17). Journal of Applied Physics, Vol. 134.

By: H. Xue n, E. Palmese n, R. Song *, M. Chowdhury *, N. Strandwitz * & J. Wierer n 

topics (OpenAlex): GaN-based semiconductor devices and materials; Metal and Thin Film Mechanics; ZnO doping and properties
UN Sustainable Development Goals Color Wheel
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Sources: Web Of Science, ORCID, NC State University Libraries
Added: September 5, 2023

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