Haotian Xue

Growth and characterization of AlInN/GaN superlattices

Xue, H., Palmese, E., Sekely, B. J., Little, B. D., Kish, F. A., Muth, J. F., & Wierer, J. J. (2024, March 15). JOURNAL OF CRYSTAL GROWTH, Vol. 630.

High Bandwidth GaN-Based Micro-LEDs at Temperatures up to 400 <SUP>°</SUP>C

IEEE PHOTONICS TECHNOLOGY LETTERS, 36(17), 1069–1072.

Light-Triggered, Enhancement-Mode AlInN/GaN HEMTs With Sub-Microsecond Switching Times

IEEE ELECTRON DEVICE LETTERS, 45(10), 1903–1906.

Structural and optical characterization of thin AlInN films on c-plane GaN substrates

Rogers, D. J., Xue, H., Palmese, E., & Wierer Jr, J. J. (2024, October 28). JOURNAL OF APPLIED PHYSICS, Vol. 136.

Electrical Performance of Sputtered Epitaxial Magnesium Oxide on n-Type Gallium Nitride Metal-Oxide-Semiconductor Devices

Shvilberg, L., Mimura, T., Xue, H., Wierer Jr, J. J., Paisley, E. A., Heinrich, H., & Ihlefeld, J. F. (2023, May 22). IEEE TRANSACTIONS ON ELECTRON DEVICES, Vol. 5.

Enhancement-Mode AlInN/GaN High-Electron-Mobility Transistors Enabled by Thermally Oxidized Gates

Palmese, E., Xue, H., Pavlidis, S., & Wierer, J. J. (2023, December 21). IEEE TRANSACTIONS ON ELECTRON DEVICES, Vol. 12.

Structural and optical characterization of thin AlInN films on c-plane GaN substrates

JOURNAL OF APPLIED PHYSICS, 134(7).