Haotian Xue
College of Engineering
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Works (6)
Updated: November 5th, 2024 05:00
2024 article
Enhancement-Mode AlInN/GaN High-Electron-Mobility Transistors Enabled by Thermally Oxidized Gates
Palmese, E., Xue, H., Pavlidis, S., & Wierer, J. J. (2023, December 21). IEEE TRANSACTIONS ON ELECTRON DEVICES, Vol. 12.
author keywords: HEMTs; Logic gates; MODFETs; Oxidation; Gallium nitride; Fabrication; Threshold voltage; AlInN; enhancement mode; gallium nitride (GaN); high-electron-mobility transistors (HEMTs); thermal oxidation
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(OpenAlex)
Sources: Web Of Science, ORCID, NC State University Libraries
Added: December 22, 2023
2024 article
Growth and characterization of AlInN/GaN superlattices
Xue, H., Palmese, E., Sekely, B. J., Little, B. D., Kish, F. A., Muth, J. F., & Wierer, J. J. (2024, March 15). JOURNAL OF CRYSTAL GROWTH, Vol. 630.
UN Sustainable Development Goal Categories
14. Life Below Water
(OpenAlex)
Sources: Web Of Science, ORCID, NC State University Libraries
Added: January 11, 2024
2024 journal article
High Bandwidth GaN-Based Micro-LEDs at Temperatures up to 400 <SUP>°</SUP>C
IEEE PHOTONICS TECHNOLOGY LETTERS, 36(17), 1069–1072.
author keywords: Bandwidth; Temperature measurement; Current density; Modulation; Light emitting diodes; Temperature; Vertical cavity surface emitting lasers; GaN; micro light-emitting diodes (micro-LEDs); modulation; optical communication; differential carrier lifetime
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(OpenAlex)
Sources: Web Of Science, ORCID
Added: August 1, 2024
2024 article
Structural and optical characterization of thin AlInN films on c-plane GaN substrates
Rogers, D. J., Xue, H., Palmese, E., & Wierer Jr, J. J. (2024, October 28). JOURNAL OF APPLIED PHYSICS, Vol. 136.
open access via pubs.aip.org (publisher PDF)
Sources: Web Of Science, ORCID, NC State University Libraries
Added: October 24, 2024
2023 article
Electrical Performance of Sputtered Epitaxial Magnesium Oxide on n-Type Gallium Nitride Metal-Oxide-Semiconductor Devices
Shvilberg, L., Mimura, T., Xue, H., Wierer Jr, J. J., Paisley, E. A., Heinrich, H., & Ihlefeld, J. F. (2023, May 22). IEEE TRANSACTIONS ON ELECTRON DEVICES, Vol. 5.
author keywords: Capacitance measurement; dielectric films; gallium compounds; MIS capacitors; semiconductor-insulator interfaces; sputtering
Sources: Web Of Science, ORCID, NC State University Libraries
Added: July 3, 2023
2023 journal article
Structural and optical characterization of thin AlInN films on c-plane GaN substrates
JOURNAL OF APPLIED PHYSICS, 134(7).
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(OpenAlex)
Sources: Web Of Science, ORCID, NC State University Libraries
Added: September 5, 2023
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