Haotian Xue

College of Engineering

Works (4)

Updated: April 5th, 2024 17:34

2024 article

Growth and characterization of AlInN/GaN superlattices

Xue, H., Palmese, E., Sekely, B. J., Little, B. D., Kish, F. A., Muth, J. F., & Wierer, J. J. (2024, March 15). JOURNAL OF CRYSTAL GROWTH, Vol. 630.

By: H. Xue n, E. Palmese n, B. Sekely n, B. Little n, F. Kish n, J. Muth n, J. Wierer n

Sources: Web Of Science, ORCID
Added: January 11, 2024

2023 article

Electrical Performance of Sputtered Epitaxial Magnesium Oxide on n-Type Gallium Nitride Metal-Oxide-Semiconductor Devices

Shvilberg, L., Mimura, T., Xue, H., Wierer Jr, J. J., Paisley, E. A., Heinrich, H., & Ihlefeld, J. F. (2023, May 22). IEEE TRANSACTIONS ON ELECTRON DEVICES, Vol. 5.

By: L. Shvilberg*, T. Mimura*, H. Xue n, J. Wierer Jr, E. Paisley*, H. Heinrich*, J. Ihlefeld*

author keywords: Capacitance measurement; dielectric films; gallium compounds; MIS capacitors; semiconductor-insulator interfaces; sputtering
Sources: Web Of Science, ORCID
Added: July 3, 2023

2023 article

Enhancement-Mode AlInN/GaN High-Electron-Mobility Transistors Enabled by Thermally Oxidized Gates

Palmese, E., Xue, H., Pavlidis, S., & Wierer, J. J. (2023, December 21). IEEE TRANSACTIONS ON ELECTRON DEVICES, Vol. 12.

By: E. Palmese n, H. Xue n, S. Pavlidis n & J. Wierer n

author keywords: HEMTs; Logic gates; MODFETs; Oxidation; Gallium nitride; Fabrication; Threshold voltage; AlInN; enhancement mode; gallium nitride (GaN); high-electron-mobility transistors (HEMTs); thermal oxidation
Sources: Web Of Science, ORCID
Added: December 22, 2023

2023 journal article

Structural and optical characterization of thin AlInN films on c-plane GaN substrates


By: H. Xue n, E. Palmese n, R. Song*, M. Chowdhury*, N. Strandwitz* & J. Wierer Jr

Sources: Web Of Science, ORCID
Added: September 5, 2023

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