Haotian Xue

Palmese, E., Xue, H., Pavlidis, S., & Wierer, J. J. (2023, December 21). Enhancement-Mode AlInN/GaN High-Electron-Mobility Transistors Enabled by Thermally Oxidized Gates. IEEE TRANSACTIONS ON ELECTRON DEVICES, Vol. 12. https://doi.org/10.1109/TED.2023.3343313

Xue, H., Palmese, E., Sekely, B. J., Little, B. D., Kish, F. A., Muth, J. F., & Wierer, J. J. (2024, March 15). Growth and characterization of AlInN/GaN superlattices. JOURNAL OF CRYSTAL GROWTH, Vol. 630. https://doi.org/10.1016/j.jcrysgro.2024.127567

Rogers, D. J., Xue, H., Kish Jr, F. A., Hsiao, F.-C., Pezeshki, B., Tselikov, A., & Wierer Jr, J. J. (2024). High Bandwidth GaN-Based Micro-LEDs at Temperatures up to 400 <SUP>°</SUP>C. IEEE PHOTONICS TECHNOLOGY LETTERS, 36(17), 1069–1072. https://doi.org/10.1109/LPT.2024.3434601

Palmese, E., Xue, H., Rogers, D. J., & Wierer Jr, J. J. (2024). Light-Triggered, Enhancement-Mode AlInN/GaN HEMTs With Sub-Microsecond Switching Times. IEEE ELECTRON DEVICE LETTERS, 45(10), 1903–1906. https://doi.org/10.1109/LED.2024.3440177

Rogers, D. J., Xue, H., Palmese, E., & Wierer Jr, J. J. (2024, October 28). Structural and optical characterization of thin AlInN films on c-plane GaN substrates. JOURNAL OF APPLIED PHYSICS, Vol. 136. https://doi.org/10.1063/5.0237160

Shvilberg, L., Mimura, T., Xue, H., Wierer Jr, J. J., Paisley, E. A., Heinrich, H., & Ihlefeld, J. F. (2023, May 22). Electrical Performance of Sputtered Epitaxial Magnesium Oxide on n-Type Gallium Nitride Metal-Oxide-Semiconductor Devices. IEEE TRANSACTIONS ON ELECTRON DEVICES, Vol. 5. https://doi.org/10.1109/TED.2023.3269406

Xue, H., Palmese, E., Song, R., Chowdhury, M. I., Strandwitz, N. C., & Wierer Jr, J. J. (2023). Structural and optical characterization of thin AlInN films on c-plane GaN substrates. JOURNAL OF APPLIED PHYSICS, 134(7). https://doi.org/10.1063/5.0136004