@inproceedings{ji_lee_wang_misra_huang_2015, title={A new AlGaN/GaN power HFET employing partial deep trench drain structure for high voltage application}, DOI={10.1109/wipda.2015.7369277}, abstractNote={A new AlGaN/GaN heterojuction field effect transistor (HFET) employing the partial deep trench drain structure for high voltage application has been proposed and verified successfully to achieve low leakage current and small Rdson. In order to reduce leakage current and on-resistance of HFET devices, we propose a partial deep trench on drain edge adjacent to access region for the first time, which contributes to reducing the surface electric field under the off-state. In addition, trenched area under drain Ohmic metal enhances Ohmic contact on the surface of AlGaN layer which reduces contact resistivity of drain Ohmic contact. The proposed deep trench drain successfully reduces Ohmic contact resistance under the on-state and leakage current under the off-state at the same time.}, booktitle={WiPDA 2015 3rd IEEE Workshop on Wide Bandgap Power Devices and Applications}, author={Ji, I. H. and Lee, B. and Wang, S. Z. and Misra, Veena and Huang, A. Q.}, year={2015}, pages={147–149} }
 @inproceedings{sung_huang_baliga_ji_ke_hopkins_2015, title={The first demonstration of symmetric blocking SiC gate turn-off (GTO) thyristor}, ISBN={9781479962594 9781479962617}, url={http://dx.doi.org/10.1109/ISPSD.2015.7123438}, DOI={10.1109/ispsd.2015.7123438}, abstractNote={This paper reports the development of symmetric blocking SiC p-GTO thyristors. The proposed thyristor structure features a positive bevel edge termination implemented by orthogonal dicing technique. In this paper, a detailed design of the device structure, forward current-voltage characteristics, and symmetric blocking capabilities are discussed.}, note={\urlhttps://ieeexplore.ieee.org/document/7123438/}, booktitle={2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD)}, publisher={IEEE}, author={Sung, Woongje and Huang, Alex Q. and Baliga, B. J. and Ji, Inhwan and Ke, Haotao and Hopkins, Douglas C.}, year={2015}, month={May}, pages={257–260} }
 @inproceedings{ji_lee_wang_misra_huang_choi_2014, title={High voltage AlGaN/GaN HFET employing low taper angle field-plate for stable forward blocking capability}, DOI={10.1109/ispsd.2014.6856028}, abstractNote={A new high voltage AlGaN/GaN heterojuction field effect transistor (HFET) employing low taper angle field-plate (LTA-FP) has been proposed and verified experimentally to achieve stable forward blocking capability with low leakage current. Proposed device with a LTA-FP of 10 degrees, fabricated by adopting a new taper etching process, exhibits stable forward blocking capability with low leakage current (2 orders of magnitude smaller) under repetitive high voltage stress, whereas the conventional device with steep FP of 70 degree shows that unstable behavior under the same stress. These experimental results indicate that the proposed LTA-FP suppresses the electric field concentration at the gate edge successfully and is an effective approach to secure the stable blocking characteristics of GaN based high voltage devices.}, booktitle={Proceedings of the international symposium on power semiconductor}, author={Ji, I. H. and Lee, B. M. and Wang, S. Z. and Misra, Veena and Huang, A. Q. and Choi, Y. H.}, year={2014}, pages={269–272} }