Isaac S. Bryan

Structural characteristics of m-plane AlN substrates and homoepitaxial films

Graziano, M. B., Bryan, I., Bryan, Z., Kirste, R., Tweedie, J., Collazo, R., & Sitar, Z. (2018, December 14). Journal of Crystal Growth, Vol. 507, pp. 389–394.

High free carrier concentration in p-GaN grown on AlN substrates

Sarkar, B., Mita, S., Reddy, P., Klump, A., Kaess, F., Tweedie, J., … Sitar, Z. (2017, July 17). Applied Physics Letters, Vol. 111, p. 032109.

Nonlinear analysis of vanadium- and titanium-based contacts to Al-rich n-AlGaN

Haidet, B. B., Sarkar, B., Reddy, P., Bryan, I., Bryan, Z., Kirste, R., … Sitar, Z. (2017, September 5). Japanese Journal of Applied Physics, Vol. 56, p. 100302.

Step-free GaN surfaces grown by confined-area metal-organic vapor phase epitaxy

Shelton, C. T., Bryan, I., Paisley, E. A., Sachet, E., Ihlefeld, J. F., Lavrik, N., … Maria, J.-P. (2017, September 1). APL Materials, Vol. 5.

Fabrication and structural properties of AlN submicron periodic lateral polar structures and waveguides for UV-C applications

Alden, D., Guo, W., Kirste, R., Kaess, F., Bryan, I., Troha, T., … Sitar, Z. (2016, June 27). Applied Physics Letters, Vol. 108, p. 261106.

Point defect reduction in wide bandgap semiconductors by defect quasi Fermi level control

Reddy, P., Hoffmann, M. P., Kaess, F., Bryan, Z., Bryan, I., Bobea, M., … Sitar, Z. (2016, November 14). Journal of Applied Physics, Vol. 120, p. 185704.

Strain engineered high reflectivity DBRs in the deep UV

Franke, A., Hoffmann, M. P., Hernandez-Balderrama, L., Kaess, F., Bryan, I., Washiyama, S., … Sitar, Z. (2016, February 26). Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE, Vol. 9748.

The role of surface kinetics on composition and quality of AlGaN

Bryan, I., Bryan, Z., Mita, S., Rice, A., Hussey, L., Shelton, C., … Sitar, Z. (2016, July 2). Journal of Crystal Growth, Vol. 451, pp. 65–71.

UV second harmonic generation in AlN waveguides with modal phase matching

Troha, T., Rigler, M., Alden, D., Bryan, I., Guo, W., Kirste, R., … Zgonik, M. (2016, May 20). Optical Materials Express.

A conduction model for contacts to Si-doped AlGaN grown on sapphire and single-crystalline AlN

Haidet, B. B., Bryan, I., Reddy, P., Bryan, Z., Collazo, R., & Sitar, Z. (2015, June 26). Journal of Applied Physics, Vol. 117, p. 245702.

Charge neutrality levels, barrier heights, and band offsets at polar AlGaN

Reddy, P., Bryan, I., Bryan, Z., Tweedie, J., Washiyama, S., Kirste, R., … Sitar, Z. (2015, August 31). Applied Physics Letters, Vol. 107, p. 091603.

Electronic Biosensors Based on III-Nitride Semiconductors

Kirste, R., Rohrbaugh, N., Bryan, I., Bryan, Z., Collazo, R., & Ivanisevic, A. (2015, June 6). Annual Review of Analytical Chemistry, Vol. 8, pp. 149–169.

High internal quantum efficiency in AlGaN multiple quantum wells grown on bulk AlN substrates

Bryan, Z., Bryan, I., Xie, J., Mita, S., Sitar, Z., & Collazo, R. (2015, April 6). Applied Physics Letters, Vol. 106.

Long-term stability assessment of AlGaN/GaN field effect transistors modified with peptides: Device characteristics vs. surface properties

Rohrbaugh, N., Bryan, I., Bryan, Z., Collazo, R., & Ivanisevic, A. (2015, September 1). AIP Advances, Vol. 5.

Strain dependence on polarization properties of AlGaN and AlGaN-based ultraviolet lasers grown on AlN substrates

Bryan, Z., Bryan, I., Mita, S., Tweedie, J., Sitar, Z., & Collazo, R. (2015, June 8). Applied Physics Letters, Vol. 106.

Surface kinetics in AlN growth: A universal model for the control of surface morphology in III-nitrides

Bryan, I., Bryan, Z., Mita, S., Rice, A., Tweedie, J., Collazo, R., & Sitar, Z. (2015, December 30). Journal of Crystal Growth, Vol. 438, pp. 81–89.

(Invited) Effects of Environmental Exposure on Stability and Conductance Poly-l-lysine Coated AlGaN/GaN High Electron Mobility Transistors

Rohrbaugh, N., Bryan, I., Bryan, Z., Collazo, R., & Ivanisevic, A. (2014, March 20). ECS Transactions, Vol. 61, pp. 147–151.

Adsorption and adhesion of common serum proteins to nanotextured gallium nitride

Bain, L. E., Hoffmann, M. P., Bryan, I., Collazo, R., & Ivanisevic, A. (2014, December 19). Nanoscale, Vol. 7, pp. 2360–2365.

AlGaN/GaN field effect transistors functionalized with recognition peptides

Applied Physics Letters, 105(13).

Exciton transitions and oxygen as a donor in m-plane AlN homoepitaxial films

Bryan, Z., Bryan, I., Bobea, M., Hussey, L., Kirste, R., Sitar, Z., & Collazo, R. (2014, April 2). Journal of Applied Physics, Vol. 115.

Fermi level control of compensating point defects during metalorganic chemical vapor deposition growth of Si-doped AlGaN

Bryan, Z., Bryan, I., Gaddy, B. E., Reddy, P., Hussey, L., Bobea, M., … Collazo, R. (2014, December 1). Applied Physics Letters, Vol. 105, p. 222101.

Growth and characterization of Al_xGa_1−xN lateral polarity structures

Hoffmann, M. P., Kirste, R., Mita, S., Guo, W., Tweedie, J., Bobea, M., … Sitar, Z. (2014, November 18). Physica Status Solidi (a), Vol. 212, pp. 1039–1042.

HVPE-GaN grown on MOCVD-GaN/sapphire template and ammonothermal GaN seeds: Comparison of structural, optical, and electrical properties

Sochacki, T., Bryan, Z., Amilusik, M., Bobea, M., Fijalkowski, M., Bryan, I., … Sitar, Z. (2014, February 21). Journal of Crystal Growth.

Homoepitaxial AlN thin films deposited on m-plane (11¯00) AlN substrates by metalorganic chemical vapor deposition

Bryan, I., Bryan, Z., Bobea, M., Hussey, L., Kirste, R., Collazo, R., & Sitar, Z. (2014, October 6). Journal of Applied Physics, Vol. 116.

Properties of AlN based lateral polarity structures

Kirste, R., Mita, S., Hoffmann, M. P., Hussey, L., Guo, W., Bryan, I., … Sitar, Z. (2014, January 20). Physica Status Solidi. C, Conferences and Critical Reviews/Physica Status Solidi. C, Current Topics in Solid State Physics, Vol. 11, pp. 261–264.

Sapphire decomposition and inversion domains in N-polar aluminum nitride

Hussey, L., White, R. M., Kirste, R., Mita, S., Bryan, I., Guo, W., … Sitar, Z. (2014, January 20). Applied Physics Letters, Vol. 104.

Stimulated emission and optical gain in AlGaN heterostructures grown on bulk AlN substrates

Guo, W., Bryan, Z., Xie, J., Kirste, R., Mita, S., Bryan, I., … Sitar, Z. (2014, March 14). Journal of Applied Physics, Vol. 115.

Surface preparation of non‐polar single‐crystalline AlN substrates

Bryan, I., Akouala, C. R., Tweedie, J., Bryan, Z., Rice, A., Kirste, R., … Sitar, Z. (2014, January 22). Physica Status Solidi. C, Conferences and Critical Reviews/Physica Status Solidi. C, Current Topics in Solid State Physics, Vol. 11, pp. 454–457.

The effect of polarity and surface states on the Fermi level at III-nitride surfaces

Reddy, P., Bryan, I., Bryan, Z., Guo, W., Hussey, L., Collazo, R., & Sitar, Z. (2014, September 22). Journal of Applied Physics, Vol. 116.

The role of the carbon-silicon complex in eliminating deep ultraviolet absorption in AlN

Gaddy, B. E., Bryan, Z., Bryan, I., Xie, J., Dalmau, R., Moody, B., … Irving, D. L. (2014, May 19). Applied Physics Letters, Vol. 104.

Comparative study of etching high crystalline quality AlN and GaN

Guo, W., Xie, J., Akouala, C., Mita, S., Rice, A., Tweedie, J., … Sitar, Z. (2013, January 4). Journal of Crystal Growth, Vol. 366, pp. 20–25.

Erratum: “Kinase detection with gallium nitride based high electron mobility transistors” [Appl. Phys. Lett. 103, 013701 (2013)]

Applied Physics Letters, 103(8), 089902.

Ge doped GaN with controllable high carrier concentration for plasmonic applications

Applied Physics Letters, 103(24), 242107.

Kinase detection with gallium nitride based high electron mobility transistors

Applied Physics Letters, 103(1).

Strain relaxation by pitting in AlN thin films deposited by metalorganic chemical vapor deposition

Bryan, I., Rice, A., Hussey, L., Bryan, Z., Bobea, M., Mita, S., … Sitar, Z. (2013, February 11). Applied Physics Letters, Vol. 102.

Vacancy compensation and related donor-acceptor pair recombination in bulk AlN

Gaddy, B. E., Bryan, Z., Bryan, I., Kirste, R., Xie, J., Dalmau, R., … Irving, D. L. (2013, October 14). Applied Physics Letters, Vol. 103.

X-ray characterization techniques for the assessment of surface damage in crystalline wafers: A model study in AlN

Bobea, M., Tweedie, J., Bryan, I., Bryan, Z., Rice, A., Dalmau, R., … Sitar, Z. (2013, March 28). Journal of Applied Physics, Vol. 113.

Fermi Level Control of Point Defects During Growth of Mg-Doped GaN

Bryan, Z., Hoffmann, M., Tweedie, J., Kirste, R., Callsen, G., Bryan, I., … Collazo, R. (2012, December 4). Journal of Electronic Materials, Vol. 42, pp. 815–819.

Lateral epitaxial overgrowth of nitrogen polar GaN on smooth nitrogen polar GaN templates by metalorganic chemical vapor deposition

Hussey, L., Mita, S., Xie, J., Guo, W., Akouala, C.-R., Rajan, J., … Sitar, Z. (2012, December 1). Journal of Applied Physics, Vol. 112.

Nanostructure surface patterning of GaN thin films and application to AlGaN/AlN multiple quantum wells: A way towards light extraction efficiency enhancement of III-nitride based light emitting diodes

Guo, W., Kirste, R., Bryan, Z., Bryan, I., Gerhold, M., Collazo, R., & Sitar, Z. Journal of Applied Physics, 117(11).

On the origin of the 4.7 eV absorption and 2.8 eV emission bands in bulk AlN substrates

Alden, D., Bryan, Z., Gaddy, B. E., Bryan, I., Callsen, G., Koukitu, A., … Collazo, R. Wide bandgap semiconductor materials and devices 17, 72(5), 31–40.

Point defect management in GaN by Fermi-level control during growth

Hoffmann, M. P., Tweedie, J., Kirste, R., Bryan, Z., Bryan, I., Gerhold, M., … Collazo, R. Gallium nitride materials and devices ix, 8986.