Works (15)

2019 | journal article

Growth and characterization of InxGa1-xN (0 < x < 0.16) templates for controlled emissions from MQW

Growth and characterization of InxGa1-xN (0 < x < 0.16) templates for controlled emissions from MQW. JOURNAL OF CRYSTAL GROWTH, 520, 18–26.

By: M. Abdelhamid, J. Reynolds, N. El-Masry & S. Bedair

Source: Web Of Science
Added: June 24, 2019

2019 | journal article

Planar Hall effect and anisotropic magnetoresistance in semiconducting and conducting oxide thin films

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 125(5).

By: C. Akouala, R. Kumar, S. Punugupati, C. Reynolds, J. Reynolds, E. Mily, J. Maria, J. Narayan, F. Hunte

Source: Web Of Science
Added: April 22, 2019

2017 | journal article

Electric field control of ferromagnetism at room temperature in GaCrN (p-i-n) device structures

Applied Physics Letters, 111(8).

By: N. El-Masry, J. Zavada, J. Reynolds, C. Reynolds, Z. Liu & S. Bedair

Source: NC State University Libraries
Added: August 6, 2018

2014 | review

Progress in ZnO acceptor doping: What is the best strategy?

Advances in Condensed Matter Physics.

By: J. Reynolds & C. Reynolds

Source: NC State University Libraries
Added: August 6, 2018

2013 | journal article

Dislocations as quantum wires: Buffer leakage in AlGaN/GaN heterostructures

Journal of Materials Research, 28(13), 1687–1691.

By: C. Reynolds, J. Reynolds, A. Crespo, J. Gillespie, K. Chabak & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2013 | journal article

Shallow acceptor complexes in p-type ZnO

Applied Physics Letters, 102(15).

By: J. Reynolds, C. Reynolds, A. Mohanta, J. Muth, J. Rowe, H. Everitt, D. Aspnes

Source: NC State University Libraries
Added: August 6, 2018

2012 | journal article

Indium incorporation in InGaN/GaN quantum wells grown on m-plane GaN substrate and c-plane sapphire

Physica Status Solidi. A, Applications and Materials Science, 209(3), 559–564.

By: K. Lai, T. Paskova, V. Wheeler, T. Chung, J. Grenko, M. Johnson, K. Udwary, E. Preble, K. Evans

Source: NC State University Libraries
Added: August 6, 2018

2011 | journal article

Characterization of freestanding semi-insulating Fe-doped GaN by photoluminescence and electromodulation spectroscopy

Journal of Applied Physics, 109(12).

By: D. Dumcenco, S. Levcenco, Y. Huang, C. Reynolds, J. Reynolds, K. Tiong, T. Paskova, K. Evans

Source: NC State University Libraries
Added: August 6, 2018

2010 | journal article

Effect of m-plane GaN substrate miscut on InGaN/GaN quantum well growth

Journal of Crystal Growth, 312(7), 902–905.

By: K. Lai, T. Paskova, V. Wheeler, J. Grenko, M. Johnson, K. Udwary, E. Preble, K. Evans

Source: NC State University Libraries
Added: August 6, 2018

2010 | journal article

Optimization of homoepitaxially grown AlGaN/GaN heterostructures

Physica Status Solidi. A, Applications and Materials Science, 207(10), 2292–2299.

By: J. Grenko, C. Ebert, C. Reynolds, G. Duscher, D. Barlage, M. Johnson, E. Preble, T. Paskova, K. Evans

Source: NC State University Libraries
Added: August 6, 2018

2010 | journal article

Physical properties of AlGaN/GaN heterostructures grown on vicinal substrates

Journal of Electronic Materials, 39(5), 504–516.

By: J. Grenko, C. Reynolds, D. Barlage, M. Johnson, S. Lappi, C. Ebert, E. Preble, T. Paskova, K. Evans

Source: NC State University Libraries
Added: August 6, 2018

2009 | journal article

Crystallographic plane dependent Fe and Si dopant incorporation and activation in InP

Physica Status Solidi. A, Applications and Materials Science (Online), 206(4), 691–696.

By: C. Reynolds & J. Grenko

Source: NC State University Libraries
Added: August 6, 2018

2009 | journal article

Excitation current dependent cathodoluminescence study of InGaN/GaN quantum wells grown on m-plane and c-plane GaN substrates

Journal of Applied Physics, 106(11).

By: K. Lai, T. Paskova, V. Wheeler, J. Grenko, M. Johnson, D. Barlage, K. Udwary, E. Preble, K. Evans

Source: NC State University Libraries
Added: August 6, 2018

2004 | journal article

Nanoscale GaN whiskers fabricated by photoelectrochemical etching

Journal of Applied Physics, 96(9), 5185–5188.

By: J. Grenko, C. Reynolds, R. Schlesser, J. Hren, K. Bachmann, Z. Sitar, P. Kotula

Source: NC State University Libraries
Added: August 6, 2018

2004 | journal article

Selective etching of GaN from AlGaN/GaN and AlN/GaN structures

MRS Internet Journal of Nitride Semiconductor Research, 9(5).

By: J. Grenko, C. Reynolds, R. Schlesser, K. Bachmann, Z. Rietmeier, R. Davis, Z. Sitar

Source: NC State University Libraries
Added: August 6, 2018