Judith Grenko Reynolds

Works (16)

Updated: April 11th, 2023 10:13
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2020 journal article

Observing relaxation in device quality InGaN templates by TEM techniques

APPLIED PHYSICS LETTERS, 116(10).

By: T. Eldred, M. Abdelhamid, J. Reynolds, N. El-Masry, J. LeBeau & S. Bedair

Source: Web Of Science
Added: April 6, 2020

2019 journal article

Growth and characterization of InxGa1-xN (0 < x < 0.16) templates for controlled emissions from MQW

Growth and characterization of InxGa1-xN (0 < x < 0.16) templates for controlled emissions from MQW. JOURNAL OF CRYSTAL GROWTH, 520, 18–26.

By: M. Abdelhamid, J. Reynolds, N. El-Masry & S. Bedair

author keywords: InGaN relaxation; Metal Organic Chemical Vapor Deposition (MOCVD); InGaN semibulk; Multiple quantum wells (MQWs); High resolution X-ray diffraction (HRXRD); Nitrides
Source: Web Of Science
Added: June 24, 2019

2019 journal article

Planar Hall effect and anisotropic magnetoresistance in semiconducting and conducting oxide thin films

Applied Physics A, 125(5).

By: C. Akouala, R. Kumar, S. Punugupati, C. Reynolds  n, J. Reynolds, E. Mily, J. Maria, J. Narayan , F. Hunte

Sources: Web Of Science, Crossref, ORCID
Added: April 22, 2019

2017 journal article

Electric field control of ferromagnetism at room temperature in GaCrN (p-i-n) device structures

Applied Physics Letters, 111(8), 082402.

By: N. El-Masry, J. Zavada, J. Reynolds, C. Reynolds n, Z. Liu n & S. Bedair

Sources: Web Of Science, Crossref
Added: August 6, 2018

2014 review

Progress in ZnO Acceptor Doping: What Is the Best Strategy?

[Review of ]. ADVANCES IN CONDENSED MATTER PHYSICS, 2014.

By: J. Reynolds & C. Reynolds n

Source: Web Of Science
Added: August 6, 2018

2013 journal article

Dislocations as quantum wires: Buffer leakage in AlGaN/GaN heterostructures

JOURNAL OF MATERIALS RESEARCH, 28(13), 1687–1691.

By: C. Reynolds n, J. Reynolds, A. Crespo*, J. Gillespie*, K. Chabak* & R. Davis*

Source: Web Of Science
Added: August 6, 2018

2013 journal article

Shallow acceptor complexes in p-type ZnO

APPLIED PHYSICS LETTERS, 102(15).

By: J. Reynolds, C. Reynolds, A. Mohanta, J. Muth, J. Rowe, H. Everitt, D. Aspnes 

Sources: Web Of Science, ORCID
Added: August 6, 2018

2012 journal article

Indium incorporation in InGaN/GaN quantum wells grown on m-plane GaN substrate and c-plane sapphire

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 209(3), 559–564.

By: K. Lai, T. Paskova, V. Wheeler, T. Chung*, J. Grenko n, M. Johnson n, K. Udwary*, E. Preble, K. Evans*

author keywords: cathodoluminescence; MOCVD; quantum wells; TEM; RSM
Source: Web Of Science
Added: August 6, 2018

2011 journal article

Characterization of freestanding semi-insulating Fe-doped GaN by photoluminescence and electromodulation spectroscopy

JOURNAL OF APPLIED PHYSICS, 109(12).

By: D. Dumcenco, S. Levcenco, Y. Huang, C. Reynolds, J. Reynolds, K. Tiong, T. Paskova, K. Evans

Source: Web Of Science
Added: August 6, 2018

2010 journal article

Effect of m-plane GaN substrate miscut on InGaN/GaN quantum well growth

JOURNAL OF CRYSTAL GROWTH, 312(7), 902–905.

By: K. Lai, T. Paskova, V. Wheeler, J. Grenko n, M. Johnson n, K. Udwary*, E. Preble*, K. Evans*

author keywords: Metalorganic chemical vapor deposition; Nitrides; Semiconducting III-V materials; Light emitting diodes
Source: Web Of Science
Added: August 6, 2018

2010 journal article

Optimization of homoepitaxially grown AlGaN/GaN heterostructures

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 207(10), 2292–2299.

By: J. Grenko n, C. Ebert*, C. Reynolds n, G. Duscher, D. Barlage, M. Johnson n, E. Preble*, T. Paskova, K. Evans*

author keywords: AlGaN; GaN; heterostructures; mobility; MOCVD; two-dimensional electron gas
Source: Web Of Science
Added: August 6, 2018

2010 journal article

Physical Properties of AlGaN/GaN Heterostructures Grown on Vicinal Substrates

Journal of Electronic Materials, 39(5), 504–516.

By: J. Grenko n, C. Reynolds n, D. Barlage n, M. Johnson n, S. Lappi, C. Ebert*, E. Preble*, T. Paskova, K. Evans*

author keywords: GaN; vicinal surfaces
Sources: Web Of Science, Crossref
Added: August 6, 2018

2009 journal article

Crystallographic plane dependent Fe and Si dopant incorporation and activation in InP

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 206(4), 691–696.

By: C. Reynolds & J. Grenko

Source: Web Of Science
Added: August 6, 2018

2009 journal article

Excitation current dependent cathodoluminescence study of InGaN/GaN quantum wells grown on m-plane and c-plane GaN substrates

JOURNAL OF APPLIED PHYSICS, 106(11).

By: K. Lai, T. Paskova, V. Wheeler, J. Grenko n, M. Johnson n, D. Barlage, K. Udwary*, E. Preble*, K. Evans*

author keywords: cathodoluminescence; gallium compounds; III-V semiconductors; indium compounds; quantum confined Stark effect; semiconductor quantum wells; spectral line intensity; spectral line shift; wide band gap semiconductors
Source: Web Of Science
Added: August 6, 2018

2004 journal article

Nanoscale GaN whiskers fabricated by photoelectrochemical etching

JOURNAL OF APPLIED PHYSICS, 96(9), 5185–5188.

By: J. Grenko, C. Reynolds, R. Schlesser, J. Hren, K. Bachmann, Z. Sitar, P. Kotula

Source: Web Of Science
Added: August 6, 2018

2004 journal article

Selective etching of GaN from AlGaN/GaN and AlN/GaN structures

MRS Internet Journal of Nitride Semiconductor Research, 9(5).

By: J. Grenko n, C. Reynolds  n, R. Schlesser, K. Bachmann, Z. Rietmeier n, R. Davis, Z. Sitar

Source: NC State University Libraries
Added: August 6, 2018