Works (16)

Updated: July 5th, 2023 15:57

2020 journal article

Observing relaxation in device quality InGaN templates by TEM techniques

APPLIED PHYSICS LETTERS, 116(10).

By: T. Eldred n, M. Abdelhamid n, J. Reynolds n, N. El-Masry n, J. LeBeau n & S. Bedair n

co-author countries: United States of America πŸ‡ΊπŸ‡Έ
Source: Web Of Science
Added: April 6, 2020

2019 journal article

Growth and characterization of InxGa1-xN (0 < x < 0.16) templates for controlled emissions from MQW

Growth and characterization of InxGa1-xN (0 < x < 0.16) templates for controlled emissions from MQW. JOURNAL OF CRYSTAL GROWTH, 520, 18–26.

By: M. Abdelhamid n, J. Reynolds n, N. El-Masry n & S. Bedair n

co-author countries: United States of America πŸ‡ΊπŸ‡Έ
author keywords: InGaN relaxation; Metal Organic Chemical Vapor Deposition (MOCVD); InGaN semibulk; Multiple quantum wells (MQWs); High resolution X-ray diffraction (HRXRD); Nitrides
Source: Web Of Science
Added: June 24, 2019

2019 journal article

Planar Hall effect and anisotropic magnetoresistance in semiconducting and conducting oxide thin films

Applied Physics A, 125(5).

By: C. Akouala n, R. Kumar n, S. Punugupati n, C. Reynolds n, J. Reynolds n, E. Mily n, J. Maria n, J. Narayan n , F. Hunte n

co-author countries: United States of America πŸ‡ΊπŸ‡Έ
Sources: Web Of Science, Crossref, ORCID
Added: April 22, 2019

2017 journal article

Electric field control of ferromagnetism at room temperature in GaCrN (p-i-n) device structures

Applied Physics Letters, 111(8), 082402.

By: N. El-Masry n, J. Zavada n, J. Reynolds n, C. Reynolds n, Z. Liu n & S. Bedair n

co-author countries: United States of America πŸ‡ΊπŸ‡Έ
Sources: Web Of Science, Crossref
Added: August 6, 2018

2014 review

Progress in ZnO Acceptor Doping: What Is the Best Strategy?

[Review of ]. ADVANCES IN CONDENSED MATTER PHYSICS, 2014.

By: J. Reynolds n & C. Reynolds n

co-author countries: United States of America πŸ‡ΊπŸ‡Έ
Source: Web Of Science
Added: August 6, 2018

2013 journal article

Dislocations as quantum wires: Buffer leakage in AlGaN/GaN heterostructures

JOURNAL OF MATERIALS RESEARCH, 28(13), 1687–1691.

By: C. Reynolds n, J. Reynolds n, A. Crespo*, J. Gillespie*, K. Chabak * & R. Davis *

co-author countries: United States of America πŸ‡ΊπŸ‡Έ
Source: Web Of Science
Added: August 6, 2018

2013 journal article

Shallow acceptor complexes in p-type ZnO

APPLIED PHYSICS LETTERS, 102(15).

By: J. Reynolds*, C. Reynolds, A. Mohanta, J. Muth*, J. Rowe*, H. Everitt, D. Aspnes* 

Sources: Web Of Science, ORCID
Added: August 6, 2018

2012 journal article

Indium incorporation in InGaN/GaN quantum wells grown on m-plane GaN substrate and c-plane sapphire

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 209(3), 559–564.

By: K. Lai n, T. Paskova n, V. Wheeler n, T. Chung *, J. Grenko n, M. Johnson  n, K. Udwary*, E. Preble*, K. Evans*

co-author countries: Taiwan, Province of China πŸ‡ΉπŸ‡Ό United States of America πŸ‡ΊπŸ‡Έ
author keywords: cathodoluminescence; MOCVD; quantum wells; TEM; RSM
Source: Web Of Science
Added: August 6, 2018

2011 journal article

Characterization of freestanding semi-insulating Fe-doped GaN by photoluminescence and electromodulation spectroscopy

JOURNAL OF APPLIED PHYSICS, 109(12).

By: D. Dumcenco*, S. Levcenco *, Y. Huang *, C. Reynolds n, J. Reynolds n, K. Tiong*, T. Paskova n, K. Evans*

co-author countries: Taiwan, Province of China πŸ‡ΉπŸ‡Ό United States of America πŸ‡ΊπŸ‡Έ
Source: Web Of Science
Added: August 6, 2018

2010 journal article

Effect of m-plane GaN substrate miscut on InGaN/GaN quantum well growth

JOURNAL OF CRYSTAL GROWTH, 312(7), 902–905.

By: K. Lai n, T. Paskova n, V. Wheeler n, J. Grenko n, M. Johnson  n, K. Udwary*, E. Preble *, K. Evans*

co-author countries: United States of America πŸ‡ΊπŸ‡Έ
author keywords: Metalorganic chemical vapor deposition; Nitrides; Semiconducting III-V materials; Light emitting diodes
Source: Web Of Science
Added: August 6, 2018

2010 journal article

Optimization of homoepitaxially grown AlGaN/GaN heterostructures

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 207(10), 2292–2299.

By: J. Grenko n, C. Ebert*, C. Reynolds n, G. Duscher*, D. Barlage n, M. Johnson  n, E. Preble *, T. Paskova*, K. Evans*

co-author countries: United States of America πŸ‡ΊπŸ‡Έ
author keywords: AlGaN; GaN; heterostructures; mobility; MOCVD; two-dimensional electron gas
Source: Web Of Science
Added: August 6, 2018

2010 journal article

Physical Properties of AlGaN/GaN Heterostructures Grown on Vicinal Substrates

Journal of Electronic Materials, 39(5), 504–516.

By: J. Grenko n, C. Reynolds n, D. Barlage  n, M. Johnson  n, S. Lappi n, C. Ebert*, E. Preble *, T. Paskova*, K. Evans*

co-author countries: United States of America πŸ‡ΊπŸ‡Έ
author keywords: GaN; vicinal surfaces
Sources: Web Of Science, Crossref
Added: August 6, 2018

2009 journal article

Crystallographic plane dependent Fe and Si dopant incorporation and activation in InP

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 206(4), 691–696.

By: C. Reynolds n & J. Grenko n

co-author countries: United States of America πŸ‡ΊπŸ‡Έ
Source: Web Of Science
Added: August 6, 2018

2009 journal article

Excitation current dependent cathodoluminescence study of InGaN/GaN quantum wells grown on m-plane and c-plane GaN substrates

JOURNAL OF APPLIED PHYSICS, 106(11).

By: K. Lai n, T. Paskova n, V. Wheeler n, J. Grenko n, M. Johnson  n, D. Barlage n, K. Udwary*, E. Preble *, K. Evans*

co-author countries: United States of America πŸ‡ΊπŸ‡Έ
author keywords: cathodoluminescence; gallium compounds; III-V semiconductors; indium compounds; quantum confined Stark effect; semiconductor quantum wells; spectral line intensity; spectral line shift; wide band gap semiconductors
Source: Web Of Science
Added: August 6, 2018

2004 journal article

Nanoscale GaN whiskers fabricated by photoelectrochemical etching

JOURNAL OF APPLIED PHYSICS, 96(9), 5185–5188.

By: J. Grenko n, C. Reynolds n, R. Schlesser n, J. Hren n, K. Bachmann n, Z. Sitar n, P. Kotula *

co-author countries: United States of America πŸ‡ΊπŸ‡Έ
Source: Web Of Science
Added: August 6, 2018

2004 journal article

Selective etching of GaN from AlGaN/GaN and AlN/GaN structures

MRS Internet Journal of Nitride Semiconductor Research, 9(5).

By: J. Grenko n, C. Reynolds n, R. Schlesser n, K. Bachmann n, Z. Rietmeier n, R. Davis n, Z. Sitar n

co-author countries: United States of America πŸ‡ΊπŸ‡Έ
Source: NC State University Libraries
Added: August 6, 2018