Works (16)
Updated: July 5th, 2023 15:57
2020 journal article
Observing relaxation in device quality InGaN templates by TEM techniques
APPLIED PHYSICS LETTERS, 116(10).
Source: Web Of Science
Added: April 6, 2020
2019 journal article
Growth and characterization of InxGa1-xN (0 < x < 0.16) templates for controlled emissions from MQW
Growth and characterization of InxGa1-xN (0 < x < 0.16) templates for controlled emissions from MQW. JOURNAL OF CRYSTAL GROWTH, 520, 18–26.
author keywords: InGaN relaxation; Metal Organic Chemical Vapor Deposition (MOCVD); InGaN semibulk; Multiple quantum wells (MQWs); High resolution X-ray diffraction (HRXRD); Nitrides
Source: Web Of Science
Added: June 24, 2019
2019 journal article
Planar Hall effect and anisotropic magnetoresistance in semiconducting and conducting oxide thin films
Applied Physics A, 125(5).
Sources: Web Of Science, Crossref, NC State University Libraries
Added: April 22, 2019
2017 journal article
Electric field control of ferromagnetism at room temperature in GaCrN (p-i-n) device structures
Applied Physics Letters, 111(8), 082402.
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(OpenAlex)
Sources: Web Of Science, Crossref
Added: August 6, 2018
2014 review
Progress in ZnO Acceptor Doping: What Is the Best Strategy?
[Review of ]. ADVANCES IN CONDENSED MATTER PHYSICS, 2014.
open access via downloads.hindawi.com (publisher PDF)
Source: Web Of Science
Added: August 6, 2018
2013 journal article
Dislocations as quantum wires: Buffer leakage in AlGaN/GaN heterostructures
JOURNAL OF MATERIALS RESEARCH, 28(13), 1687–1691.
Source: Web Of Science
Added: August 6, 2018
2013 journal article
Shallow acceptor complexes in p-type ZnO
APPLIED PHYSICS LETTERS, 102(15).
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018
2011 journal article
Characterization of freestanding semi-insulating Fe-doped GaN by photoluminescence and electromodulation spectroscopy
JOURNAL OF APPLIED PHYSICS, 109(12).
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(OpenAlex)
Source: Web Of Science
Added: August 6, 2018
2011 journal article
Indium incorporation in InGaN/GaN quantum wells grown on m-plane GaN substrate and c-plane sapphire
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 209(3), 559–564.
author keywords: cathodoluminescence; MOCVD; quantum wells; TEM; RSM
Source: Web Of Science
Added: August 6, 2018
2010 journal article
Effect of m-plane GaN substrate miscut on InGaN/GaN quantum well growth
JOURNAL OF CRYSTAL GROWTH, 312(7), 902–905.
author keywords: Metalorganic chemical vapor deposition; Nitrides; Semiconducting III-V materials; Light emitting diodes
Source: Web Of Science
Added: August 6, 2018
2010 journal article
Optimization of homoepitaxially grown AlGaN/GaN heterostructures
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 207(10), 2292–2299.
author keywords: AlGaN; GaN; heterostructures; mobility; MOCVD; two-dimensional electron gas
Source: Web Of Science
Added: August 6, 2018
2010 journal article
Physical Properties of AlGaN/GaN Heterostructures Grown on Vicinal Substrates
Journal of Electronic Materials, 39(5), 504–516.
author keywords: GaN; vicinal surfaces
Sources: Web Of Science, Crossref
Added: August 6, 2018
2009 journal article
Crystallographic plane dependent Fe and Si dopant incorporation and activation in InP
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 206(4), 691–696.
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(Web of Science)
Source: Web Of Science
Added: August 6, 2018
2009 journal article
Excitation current dependent cathodoluminescence study of InGaN/GaN quantum wells grown on m-plane and c-plane GaN substrates
JOURNAL OF APPLIED PHYSICS, 106(11).
author keywords: cathodoluminescence; gallium compounds; III-V semiconductors; indium compounds; quantum confined Stark effect; semiconductor quantum wells; spectral line intensity; spectral line shift; wide band gap semiconductors
Source: Web Of Science
Added: August 6, 2018
2004 journal article
Nanoscale GaN whiskers fabricated by photoelectrochemical etching
JOURNAL OF APPLIED PHYSICS, 96(9), 5185–5188.
Source: Web Of Science
Added: August 6, 2018
2004 journal article
Selective etching of GaN from AlGaN/GaN and AlN/GaN structures
MRS Internet Journal of Nitride Semiconductor Research, 9(5).
Source: NC State University Libraries
Added: August 6, 2018
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