Judith Grenko Reynolds

Eldred, T. B., Abdelhamid, M., Reynolds, J. G., El-Masry, N. A., LeBeau, J. M., & Bedair, S. M. (2020). Observing relaxation in device quality InGaN templates by TEM techniques. APPLIED PHYSICS LETTERS, 116(10). https://doi.org/10.1063/1.5139269

Abdelhamid, M., Reynolds, J. G., El-Masry, N. A., & Bedair, S. M. (2019). Growth and characterization of InxGa1-xN (0 < x < 0.16) templates for controlled emissions from MQW. JOURNAL OF CRYSTAL GROWTH, 520, 18–26. https://doi.org/10.1016/j.jcrysgro.2019.05.019

Akouala, C. R., Kumar, R., Punugupati, S., Reynolds, C. L., Reynolds, J. G., Mily, E. J., … Hunte, F. (2019). Planar Hall effect and anisotropic magnetoresistance in semiconducting and conducting oxide thin films. Applied Physics A, 125(5). https://doi.org/10.1007/s00339-019-2592-y

El-Masry, N. A., Zavada, J. M., Reynolds, J. G., Reynolds, C. L., Jr., Liu, Z., & Bedair, S. M. (2017). Electric field control of ferromagnetism at room temperature in GaCrN (p-i-n) device structures. Applied Physics Letters, 111(8), 082402. https://doi.org/10.1063/1.4986431

Reynolds, J. G., & Reynolds, C. L. (2014). [Review of Progress in ZnO Acceptor Doping: What Is the Best Strategy?]. ADVANCES IN CONDENSED MATTER PHYSICS, 2014. https://doi.org/10.1155/2014/457058

Reynolds, C. L., Jr., Reynolds, J. G., Crespo, A., Gillespie, J. K., Chabak, K. D., & Davis, R. F. (2013). Dislocations as quantum wires: Buffer leakage in AlGaN/GaN heterostructures. JOURNAL OF MATERIALS RESEARCH, 28(13), 1687–1691. https://doi.org/10.1557/jmr.2013.76

Reynolds, J. G., Reynolds, C. L., Jr., Mohanta, A., Muth, J. F., Rowe, J. E., Everitt, H. O., & Aspnes, D. E. (2013). Shallow acceptor complexes in p-type ZnO. APPLIED PHYSICS LETTERS, 102(15). https://doi.org/10.1063/1.4802753

Lai, K. Y., Paskova, T., Wheeler, V. D., Chung, T. Y., Grenko, J. A., Johnson, M. A. L., … Evans, K. R. (2012). Indium incorporation in InGaN/GaN quantum wells grown on m-plane GaN substrate and c-plane sapphire. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 209(3), 559–564. https://doi.org/10.1002/pssa.201127345

Dumcenco, D. O., Levcenco, S., Huang, Y. S., Reynolds, C. L., Jr., Reynolds, J. G., Tiong, K. K., … Evans, K. R. (2011). Characterization of freestanding semi-insulating Fe-doped GaN by photoluminescence and electromodulation spectroscopy. JOURNAL OF APPLIED PHYSICS, 109(12). https://doi.org/10.1063/1.3592343

Lai, K. Y., Paskova, T., Wheeler, V. D., Grenko, J. A., Johnson, M. A. L., Udwary, K., … Evans, K. R. (2010). Effect of m-plane GaN substrate miscut on InGaN/GaN quantum well growth. JOURNAL OF CRYSTAL GROWTH, 312(7), 902–905. https://doi.org/10.1016/j.jcrysgro.2010.01.020

Grenko, J. A., Ebert, C. W., Reynolds, C. L., Jr., Duscher, G. J., Barlage, D. W., Johnson, M. A. L., … Evans, K. R. (2010). Optimization of homoepitaxially grown AlGaN/GaN heterostructures. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 207(10), 2292–2299. https://doi.org/10.1002/pssa.200925508

Grenko, J. A., Reynolds, C. L., Jr., Barlage, D. W., Johnson, M. A. L., Lappi, S. E., Ebert, C. W., … Evans, K. R. (2010). Physical Properties of AlGaN/GaN Heterostructures Grown on Vicinal Substrates. Journal of Electronic Materials, 39(5), 504–516. https://doi.org/10.1007/s11664-010-1153-0

Reynolds, C. L., Jr., & Grenko, J. A. (2009). Crystallographic plane dependent Fe and Si dopant incorporation and activation in InP. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 206(4), 691–696. https://doi.org/10.1002/pssa.200824271

Lai, K. Y., Paskova, T., Wheeler, V. D., Grenko, J. A., Johnson, M. A. L., Barlage, D. W., … Evans, K. R. (2009). Excitation current dependent cathodoluminescence study of InGaN/GaN quantum wells grown on m-plane and c-plane GaN substrates. JOURNAL OF APPLIED PHYSICS, 106(11). https://doi.org/10.1063/1.3264729

Grenko, J. A., Reynolds, C. L., Schlesser, R., Hren, J. J., Bachmann, K., Sitar, Z., & Kotula, P. G. (2004). Nanoscale GaN whiskers fabricated by photoelectrochemical etching. JOURNAL OF APPLIED PHYSICS, 96(9), 5185–5188. https://doi.org/10.1063/1.1788841

Grenko, J. A., Reynolds, C. L., Schlesser, R., Bachmann, K., Rietmeier, Z., Davis, R. F., & Sitar, Z. (2004). Selective etching of GaN from AlGaN/GaN and AlN/GaN structures. MRS Internet Journal of Nitride Semiconductor Research, 9(5). https://doi.org/10.1557/s1092578300000405