Works (7)

Updated: July 5th, 2023 16:01

2008 journal article

Titanium Interlayer Mediated Epitaxy of CoSi2 on Si1-xGex

THIN SOLID FILMS, 516(8), 1809–1817.

By: J. Burnette*, S. Kiesel*, D. Sayers* & R. Nemanich*

author keywords: CoSi2; Si1-xGex; epitaxy; Ti interlayer; TIME process; XANES; XRD; pinhole formation
Source: Web Of Science
Added: August 6, 2018

2007 journal article

Dynamics of vapor-phase organophosphates on silicon and OTS

TRIBOLOGY LETTERS, 27(3), 269–276.

By: W. Neeyakorn n, M. Varma n, C. Jaye n, J. Burnette n, S. Lee n, R. Nemanich n, C. Grant n , J. Krim n 

co-author countries: United States of America πŸ‡ΊπŸ‡Έ

Contributors: W. Neeyakorn n, M. Varma n, C. Jaye n, J. Burnette n, S. Lee n, R. Nemanich n, C. Grant n , J. Krim n 

author keywords: vapor phase lubricants; friction; QCM; nanotribology; SAMS; silicon
Sources: Web Of Science, ORCID
Added: August 6, 2018

2005 journal article

Formation of stable titanium germanosilicide thin films on Si1-xGex

JOURNAL OF APPLIED PHYSICS, 97(11).

By: J. Burnette n, R. Nemanich n & D. Sayers n

co-author countries: United States of America πŸ‡ΊπŸ‡Έ
Source: Web Of Science
Added: August 6, 2018

2005 journal article

Structural, microstructural, and electrical properties of gold films and Schottky contacts on remote plasma-cleaned, n-type ZnO{0001} surfaces

JOURNAL OF APPLIED PHYSICS, 97(10).

co-author countries: United States of America πŸ‡ΊπŸ‡Έ
Source: Web Of Science
Added: August 6, 2018

2004 chapter

Silicide contacts for Si/Ge devices

In Silicide technology for integrated circuits.

By: J. Burnette n, M. Himmerlich * & R. Nemanich n

co-author countries: Germany πŸ‡©πŸ‡ͺ United States of America πŸ‡ΊπŸ‡Έ
Source: NC State University Libraries
Added: August 6, 2018

2001 journal article

Formation of cobalt disilicide films on (root 3 x root 3)6H-SiC(0001)

PHYSICAL REVIEW B, 63(11).

By: W. Platow n, D. Wood n, K. Tracy n, J. Burnette n, R. Nemanich n & D. Sayers n

co-author countries: United States of America πŸ‡ΊπŸ‡Έ
Source: Web Of Science
Added: August 6, 2018

2001 article

XAFS studies of the formation of cobalt silicide on (root 3 x root 3) SiC(0001)

Platow, W., Wood, D. E., Burnette, J. E., Nemanich, R. J., & Sayers, D. E. (2001, March). JOURNAL OF SYNCHROTRON RADIATION, Vol. 8, pp. 475–477.

By: W. Platow n, D. Wood  n, J. Burnette n, R. Nemanich n & D. Sayers n

co-author countries: United States of America πŸ‡ΊπŸ‡Έ
author keywords: cobalt silicide; silicon carbide; metal-semiconductor contacts; molecular beam epitaxy
Source: Web Of Science
Added: August 6, 2018