James E. Burnette

Titanium Interlayer Mediated Epitaxy of CoSi2 on Si1-xGex

Thin Solid Films, 516(8), 1809–1817.

Dynamics of vapor-phase organophosphates on silicon and OTS

Tribology Letters, 27(3), 269–276.

Formation of stable titanium germanosilicide thin films on Si1-xGex

Journal of Applied Physics, 97(11).

Structural, microstructural, and electrical properties of gold films and Schottky contacts on remote plasma-cleaned, n-type ZnO{0001} surfaces

Journal of Applied Physics, 97(10).

Silicide contacts for Si/Ge devices

In Silicide technology for integrated circuits.

Formation of cobalt disilicide films on (root 3 x root 3)6H-SiC(0001) - art. no. 115312

Physical Review. B, Condensed Matter and Materials Physics, 6311(11), 5312.

XAFS studies of the formation of cobalt silicide on (root 3 x root 3) SiC(0001)

Journal of Synchrotron Radiation, 8(2001 Mar.), 475–477.