Jonathan Wierer

Xue, H., Palmese, E., Sekely, B. J., Little, B. D., Kish, F. A., Muth, J. F., & Wierer, J. J. (2024, March 15). Growth and characterization of AlInN/GaN superlattices. JOURNAL OF CRYSTAL GROWTH, Vol. 630. https://doi.org/10.1016/j.jcrysgro.2024.127567

Wei, X., Muyeed, S. A. A., Xue, H., & Wierer, J. J. (2023). Anisotropic Etching of InGaN Thin Films with Photoelectrochemical Etching to Form Quantum Dots. Materials, 16(5), 1890. https://doi.org/10.3390/ma16051890

Shvilberg, L., Mimura, T., Xue, H., Wierer Jr, J. J., Paisley, E. A., Heinrich, H., & Ihlefeld, J. F. (2023, May 22). Electrical Performance of Sputtered Epitaxial Magnesium Oxide on n-Type Gallium Nitride Metal-Oxide-Semiconductor Devices. IEEE TRANSACTIONS ON ELECTRON DEVICES, Vol. 5. https://doi.org/10.1109/TED.2023.3269406

Palmese, E., Xue, H., Pavlidis, S., & Wierer, J. J. (2023, December 21). Enhancement-Mode AlInN/GaN High-Electron-Mobility Transistors Enabled by Thermally Oxidized Gates. IEEE TRANSACTIONS ON ELECTRON DEVICES, Vol. 12. https://doi.org/10.1109/TED.2023.3343313

Xue, H., Muyeed, S. A. A., Palmese, E., Rogers, D., Song, R., Tansu, N., & Wierer, J. (2023). Recombination Rate Analysis of InGaN-Based Red-Emitting Light-Emitting Diodes. IEEE Journal of Quantum Electronics, 59(2), 1–9. https://doi.org/10.1109/jqe.2023.3246981

Xue, H., Palmese, E., Song, R., Chowdhury, M. I., Strandwitz, N. C., & Wierer Jr, J. J. (2023). Structural and optical characterization of thin AlInN films on c-plane GaN substrates. JOURNAL OF APPLIED PHYSICS, 134(7). https://doi.org/10.1063/5.0136004

Palmese, E., Xue, H., Song, R., & Wierer, J. J., Jr. (2023). Thermal oxidation of lattice mismatched Al1-xInxN films on GaN. e-Prime - Advances in Electrical Engineering, Electronics and Energy. https://doi.org/10.1016/j.prime.2023.100208

Fragkos, I. E., Sun, W., Borovac, D., Song, R., Wierer, J. J., Jr., & Tansu, N. (2022). Delta InN-InGaN Quantum Wells With AlGaN Interlayers for Long Wavelength Emission. IEEE JOURNAL OF QUANTUM ELECTRONICS, 58(2). https://doi.org/10.1109/JQE.2022.3142270

Wei, X., Muyeed, S. A. A., Xue, H., Palmese, E., Song, R., Tansu, N., & Wierer, J. J. (2022). Near-infrared electroluminescence of AlGaN capped InGaN quantum dots formed by controlled growth on photoelectrochemical etched quantum dot templates. Photonics Research, 10(1), 33. https://doi.org/10.1364/PRJ.441122

Muyeed, S. A. A., Borovac, D., Xue, H., Wei, X., Song, R., Tansu, N., & Wierer, J. J. (2021). Recombination Rates of InxGa1−xN/AlyGa1−yN/GaN Multiple Quantum Wells Emitting From 640 to 565 nm. IEEE Journal of Quantum Electronics, 57(6), 1–7. https://doi.org/10.1109/jqe.2021.3111402

Palmese, E., Peart, M. R., Borovac, D., Song, R., Tansu, N., & Wierer, J. J. (2021). Thermal oxidation rates and resulting optical constants of Al0.83In0.17N films grown on GaN. Journal of Applied Physics, 129(12), 125105. https://doi.org/10.1063/5.0035711

Peart, M. R., Borovac, D., Sun, W., Song, R., Tansu, N., & Wierer, J. J., Jr. (2020). AlInN/GaN diodes for power electronic devices. Applied Physics Express. https://doi.org/10.35848/1882-0786/abb180

Muyeed, S. A. A., Wei, X., Borovac, D., Song, R., Tansu, N., & Wierer, J. J., Jr. (2020). Controlled growth of InGaN quantum dots on photoelectrochemically etched InGaN quantum dot templates. Journal of Crystal Growth. https://doi.org/10.1016/j.jcrysgro.2020.125652

Peart, M. R., & Wierer, J. J. (2020). Edge Termination for III-Nitride Vertical Power Devices Using Polarization Engineering. IEEE Transactions on Electron Devices. https://doi.org/10.1109/ted.2019.2958485

Electrical properties of MgO/GaN metal-oxide-semiconductor structures. (2020). Solid-State Electronics. https://doi.org/10.1016/j.sse.2020.107881

Borovac, D., Sun, W., Peart, M. R., Song, R., Wierer, J. J., Jr., & Tansu, N. (2020). Low background doping in AlInN grown on GaN via metalorganic vapor phase epitaxy. Journal of Crystal Growth. https://doi.org/10.1016/j.jcrysgro.2020.125847

Borovac, D., Sun, W., Song, R., Wierer, J. J., Jr., & Tansu, N. (2020). On the thermal stability of nearly lattice-matched AlInN films grown on GaN via MOVPE. Journal of Crystal Growth. https://doi.org/10.1016/j.jcrysgro.2019.125469

Surface pretreatment and deposition temperature dependence of MgO epitaxy on GaN by thermal atomic layer deposition. (2020). Journal of Crystal Growth. https://doi.org/10.1016/j.jcrysgro.2020.125568

Wierer, J. J., Jr., & Tansu, N. (2019). III‐Nitride Micro‐LEDs for Efficient Emissive Displays. Laser & Photonics Reviews. https://doi.org/10.1002/lpor.201900141

Muyeed, S. A. A., Sun, W., Peart, M. R., Lentz, R. M., Wei, X., Borovac, D., … Wierer, J. J., Jr. (2019). Recombination rates in green-yellow InGaN-based multiple quantum wells with AlGaN interlayers. Journal of Applied Physics. https://doi.org/10.1063/1.5126965

Thermal Oxidation of AlInN for III-Nitride Electronic and Optoelectronic Devices. (2019). ACS Applied Electronic Materials. https://doi.org/10.1021/acsaelm.9b00266

Peart, M. R., Tansu, N., & Wierer, J. J. (2018). AlInN for Vertical Power Electronic Devices. IEEE Transactions on Electron Devices. https://doi.org/10.1109/ted.2018.2866980

Sun, W., Al Muyeed, S. A., Song, R. B., Wierer, J. J., & Tansu, N. (2018). Integrating AlInN interlayers into InGaN/GaN multiple quantum wells for enhanced green emission. Applied Physics Letters, 112(20), 5. https://doi.org/10.1063/1.5028257

Room temperature luminescence of passivated InGaN quantum dots formed by quantum-sized-controlled photoelectrochemical etching. (2018). Applied Physics Letters. https://doi.org/10.1063/1.5046857

Sun, W., Tan, C. K., Wierer, J. J., & Tansu, N. (2018). Ultra-Broadband Optical Gain in III-Nitride Digital Alloys. Scientific Reports, 8, 7. https://doi.org/10.1038/s41598-018-21434-6

Tan, C. K., Sun, W., Wierer, J. J., & Tansu, N. (2017). Effect of interface roughness on Auger recombination in semiconductor quantum wells. Aip Advances, 7(3), 8. https://doi.org/10.1063/1.4978777

Feezell, D., Wierer, J., Chowdhury, S., & Shen, S. C. (2017). Nitride Semiconductors Preface. Physica Status Solidi a-Applications and Materials Science, 214(8), 2. https://doi.org/10.1002/pssa.201770146

Wierer, J. J., Dickerson, J. R., Allerman, A. A., Armstrong, A. M., Crawford, M. H., & Kaplar, R. J. (2017). Simulations of Junction Termination Extensions in Vertical GaN Power Diodes. Ieee Transactions on Electron Devices, 64(5), 2291–2297. https://doi.org/10.1109/ted.2017.2684093

Al Muyeed, S. A., Sun, W., Wei, X. L., Song, R. B., Koleske, D. D., Tansu, N., & Wierer, J. J. (2017). Strain compensation in InGaN-based multiple quantum wells using AlGaN interlayers. Aip Advances, 7(10), 7. https://doi.org/10.1063/1.5000519

Ultra-efficient Solid-State Lighting: Likely Characteristics, Economic Benefits, Technological Approaches. (2017). In Springer.

Allerman, A. A., Armstrong, A. M., Fischer, A. J., Dickerson, J. R., Crawford, M. H., King, M. P., … Kaplar, R. J. (2016). Al0.3Ga0.7N PN diode with breakdown voltage > 1600 V. Electronics Letters, 52(15), 1319–1320. https://doi.org/10.1049/el.2016.1280

Armstrong, A. M., Allerman, A. A., Fischer, A. J., King, M. P., Heukelom, M. S., Moseley, M. W., … Dickerson, J. R. (2016). High voltage and high current density vertical GaN power diodes. Electronics Letters, 52(13), 1170–1171. https://doi.org/10.1049/el.2016.1156

Wierer, J. J., Tansu, N., Fischer, A. J., & Tsao, J. Y. (2016). III-nitride quantum dots for ultra-efficient solid-state lighting. Laser  Photonics Reviews, 10(4), 612–622. https://doi.org/10.1002/lpor.201500332

Dickerson, J. R., Allerman, A. A., Bryant, B. N., Fischer, A. J., King, M. P., Moseley, M. W., … Wierer, J. J. (2016). Vertical GaN Power Diodes With a Bilayer Edge Termination. Ieee Transactions on Electron Devices, 63(1), 419–425. https://doi.org/10.1109/ted.2015.2502186

Wierer, J. J., Jr., & Tsao, J. Y. (2015). Advantages of III-nitride laser diodes in solid-state lighting. Physica Status Solidi a-Applications and Materials Science, 212(5), 980–985. https://doi.org/10.1002/pssa.201431700

Moseley, M. W., Allerman, A. A., Crawford, M. H., Wierer, J. J., Jr., Smith, M. L., & Biedermann, L. B. (2015). Defect-enabled electrical current leakage in ultraviolet light-emitting diodes. Physica Status Solidi a-Applications and Materials Science, 212(4), 723–726. https://doi.org/10.1002/pssa.201400182

Armstrong, A. M., Bryant, B. N., Crawford, M. H., Koleske, D. D., Lee, S. R., & Wierer, J. J., Jr. (2015). Defect-reduction mechanism for improving radiative efficiency in InGaN/GaN light-emitting diodes using InGaN underlayers. Journal of Applied Physics, 117(13). https://doi.org/10.1063/1.4916727

Moseley, M. W., Allerman, A. A., Crawford, M. H., Wierer, J. J., Jr., Smith, M. L., & Armstrong, A. M. (2015). Detection and modeling of leakage current in AlGaN-based deep ultraviolet light-emitting diodes. Journal of Applied Physics, 117(9). https://doi.org/10.1063/1.4908543

Armstrong, A. M., Moseley, M. W., Allerman, A. A., Crawford, M. H., & Wierer, J. J., Jr. (2015). Growth temperature dependence of Si doping efficiency and compensating deep level defect incorporation in Al0.7Ga0.3N. Journal of Applied Physics, 117(18). https://doi.org/10.1063/1.4920926

Koleske, D. D., Fischer, A. J., Bryant, B. N., Kotula, P. G., & Wierer, J. J. (2015). On the increased efficiency in InGaN-based multiple quantum wells emitting at 530-590 nm with AlGaN interlayers. Journal of Crystal Growth, 415, 57–64. https://doi.org/10.1016/j.jcrysgro.2014.12.034

King, M. P., Armstrong, A. M., Dickerson, J. R., Vizkelethy, G., Fleming, R. M., Campbell, J., … Kaplar, R. J. (2015). Performance and Breakdown Characteristics of Irradiated Vertical Power GaN P-i-N Diodes. Ieee Transactions on Nuclear Science, 62(6), 2912–2918. https://doi.org/10.1109/tns.2015.2480071

Wierer, J. J., Jr., Allerman, A. A., Skogen, E. J., Tauke-Pedretti, A., Vawter, G. A., & Montano, I. (2015). Selective layer disordering in intersubband Al0.028Ga0.972N/AlN superlattices with silicon nitride capping layer. Applied Physics Express, 8(6). https://doi.org/10.7567/APEX.8.061004

Koleske, D. D., Wierer, J. J., Fischer, A. J., & Lee, S. R. (2014). Controlling indium incorporation in InGaN barriers with dilute hydrogen flows. Journal of Crystal Growth, 390, 38–45. https://doi.org/10.1016/j.jcrysgro.2013.12.037

Wierer, J. J., Montano, I., Crawford, M. H., & Allerman, A. A. (2014). Effect of thickness and carrier density on the optical polarization of Al0.44Ga0.56N/Al0.55Ga0.45N quantum well layers. Journal of Applied Physics, 115(17), 10. https://doi.org/10.1063/1.4874739

Moseley, M., Allerman, A., Crawford, M., Wierer, J. J., Jr., Smith, M., & Biedermann, L. (2014). Electrical current leakage and open-core threading dislocations in AlGaN-based deep ultraviolet light-emitting diodes. Journal of Applied Physics, 116(5), 053104 (7 pp.). https://doi.org/10.1063/1.4891830

Coltrin, M. E., Armstrong, A. M., Brener, I., Chow, W. W., Crawford, M. H., Fischer, A. J., … Wright, J. B. (2014). Energy Frontier Research Center for Solid-State Lighting Science: Exploring New Materials Architectures and Light Emission Phenomena. Journal of Physical Chemistry C, 118(25), 13330–13345. https://doi.org/10.1021/jp501136j

Wierer, J. J., Jr., Allerman, A. A., Montano, I., & Moseley, M. W. (2014). Influence of optical polarization on the improvement of light extraction efficiency from reflective scattering structures in AlGaN ultraviolet light-emitting diodes. Applied Physics Letters, 105(6), 061106 (4 pp.). https://doi.org/10.1063/1.4892974

Wierer, J. J., Jr., Allerman, A. A., Skogen, E. J., Tauke-Pedretti, A., Alford, C., Vawter, G. A., & Montano, I. (2014). Layer disordering and doping compensation of an intersubband AlGaN/AlN superlattice by silicon implantation. Applied Physics Letters, 105(13), 131107 (4 pp.). https://doi.org/10.1063/1.4896783

Benz, A., Campione, S., Moseley, M. W., Wierer, J. J., Jr., Allerman, A. A., Wendt, J. R., & Brener, I. (2014). Optical Strong Coupling between near-Infrared Metamaterials and Intersubband Transitions in III-Nitride Heterostructures. Acs Photonics, 1(10), 906–911. https://doi.org/10.1021/ph500192v

Wierer, J. J., Tsao, J. Y., & Sizov, D. S. (2014). The potential of III‐nitride laser diodes for solid‐state lighting. Physica Status Solidi c. https://doi.org/10.1002/pssc.201300422

Wang, G. T., Li, Q. M., Wierer, J. J., Koleske, D. D., & Figiel, J. J. (2014). Top-down fabrication and characterization of axial and radial III-nitride nanowire LEDs. Physica Status Solidi a-Applications and Materials Science, 211(4), 748–751. https://doi.org/10.1002/pssa.201300491

Tsao, J. Y., Crawford, M. H., Coltrin, M. E., Fischer, A. J., Koleske, D. D., Subramania, G. S., … Karlicek, R. F., Jr. (2014). Toward Smart and Ultra-efficient Solid-State Lighting. Advanced Optical Materials, 2(9), 809–836. https://doi.org/10.1002/adom.201400131

Wierer, J. J., Tsao, J. Y., & Sizov, D. S. (2013). Comparison between blue lasers and light-emitting diodes for future solid-state lighting. Laser & Photonics Reviews, 7(6), 963–993. https://doi.org/10.1002/lpor.201300048

Tsao, J. Y., Wierer, J. J., Jr., Rohwer, L. E. S., Coltrin, M. E., Crawford, M. H., Simmons, J. A., … Morkoc, H. (2013). Introduction Part B. Ultra-efficient Solid-State Lighting: Likely Characteristics, Economic Benefits, Technological Approaches. In Iii-Nitride Based Light Emitting Diodes and Applications (Vol. 126, pp. 11–26). https://doi.org/10.1007/978-94-007-5863-6_2

Howell, S. L., Padalkar, S., Yoon, K., Li, Q. M., Koleske, D. D., Wierer, J. J., … Lauhon, L. J. (2013). Spatial Mapping of Efficiency of GaN/InGaN Nanowire Array Solar Cells Using Scanning Photocurrent Microscopy. Nano Letters, 13(11), 5123–5128. https://doi.org/10.1021/nl402331u

Riley, J. R., Padalkar, S., Li, Q. M., Lu, P., Koleske, D. D., Wierer, J. J., … Lauhon, L. J. (2013). Three-Dimensional Mapping of Quantum Wells in a GaN/InGaN Core-Shell Nanowire Light-Emitting Diode Array. Nano Letters, 13(9), 4317–4325. https://doi.org/10.1021/nl4021045

Ultra-efficient Solid-State Lighting: Likely Characteristics, Economic Benefits, Technological Approaches. (2013). In Springer.

Lee, S. R., Koleske, D. D., Crawford, M. H., & Wierer, J. J., Jr. (2012). Effect of interface grading and lateral thickness variation on x-ray diffraction by InGaN/GaN multiple quantum wells. Journal of Crystal Growth, 355(1), 63–72. https://doi.org/10.1016/j.jcrysgro.2012.06.048

Kim, T.-il, Jung, Y. H., Song, J., Kim, D., Li, Y., Kim, H.-sik, … Rogers, J. A. (2012). High-Efficiency, Microscale GaN Light-Emitting Diodes and Their Thermal Properties on Unusual Substrates. Small, 8(11), 1643–1649. https://doi.org/10.1002/smll.201200382

Wierer, J. J., Jr., Li, Q., Koleske, D. D., Lee, S. R., & Wang, G. T. (2012). III- nitride core-shell nanowire arrayed solar cells. Nanotechnology, 23(19). https://doi.org/10.1088/0957-4484/23/19/194007

Wierer, J. J., Jr., Koleske, D. D., & Lee, S. R. (2012). Influence of barrier thickness on the performance of InGaN/GaN multiple quantum well solar cells. Applied Physics Letters, 100(11). https://doi.org/10.1063/1.3695170

Wang, G. T., Li, Q., Wierer, J., Figiel, J., Wright, J. B., Luk, T. S., … Linder, N. (2012). Top-down fabrication of GaN-based nanorod LEDs and lasers. Light-Emitting Diodes: Materials, Devices, and Applications For Solid State Lighting Xvi, 8278. https://doi.org/10.1117/12.909377

Neumann, A., Wierer, J. J., Jr., Davis, W., Ohno, Y., Brueck, S. R. J., & Tsao, J. Y. (2011). Four-color laser white illuminant demonstrating high color-rendering quality. Optics Express, 19(14), A982–A990. Retrieved from http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000292876500041&KeyUID=WOS:000292876500041

Wang, G. T., Li, Q., Huang, J., Wierer, J., Armstrong, A., Lin, Y., … Wetzel, C. (2011). III-Nitride Nanowires: Emerging Materials for Lighting and Energy Applications. Wide Bandgap Semiconductor Materials and Devices 12, 35(6), 3–11. https://doi.org/10.1149/1.3570840

Wierer, J. J., Jr., Allerman, A. A., & Li, Q. (2010). Silicon impurity-induced layer disordering of AlGaN/AlN superlattices. Applied Physics Letters, 97(5). https://doi.org/10.1063/1.3478002

Wierer, J. J., Jr., Fischer, A. J., & Koleske, D. D. (2010). The impact of piezoelectric polarization and nonradiative recombination on the performance of (0001) face GaN/InGaN photovoltaic devices. Applied Physics Letters, 96(5). https://doi.org/10.1063/1.3301262

Wierer, J. J., Jr., David, A., & Megens, M. M. (2009). III-nitride photonic-crystal light-emitting diodes with high extraction efficiency. Nature Photonics, 3(3), 163–169. https://doi.org/10.1038/nphoton.2009.21

Wierer, J. J., Krames, M. R., Epler, J. E., Gardner, N. F., Wendt, J. R., Sigalas, M. M., … Shagam, M. (2005). III-Nitride LEDs with photonic crystal structures. In S. A. Stockman, H. W. Yao, & E. F. Schubert (Eds.), Light-Emitting Diodes: Research, Manufacturing, and Applications IX (Vol. 5739, pp. 102–107). https://doi.org/10.1117/12.591218

Gardner, N. F., Kim, J. C., Wierer, J. J., Shen, Y. C., & Krames, M. R. (2005). Polarization anisotropy in the electroluminescence of m-plane InGaN-GaN multiple-quantum-well light-emitting diodes. Applied Physics Letters, 86(11). https://doi.org/10.1063/1.1875765

Wierer, J. J., Krames, M. R., Epler, J. E., Gardner, N. F., Craford, M. G., Wendt, J. R., … Sigalas, M. M. (2004). InGaN/GaN quantum-well heterostructure light-emitting diodes employing photonic crystal structures. Applied Physics Letters, 84(19), 3885–3887. https://doi.org/10.1063/1.1738934

Shen, Y. C., Wierer, J. J., Krames, M. R., Ludowise, M. J., Misra, M. S., Ahmed, F., … Martin, P. S. (2003). Optical cavity effects in InGaN/GaN quantum-well-heterostructure flip-chip light-emitting diodes. Applied Physics Letters, 82(14), 2221–2223. https://doi.org/10.1063/1.1566098

Steranka, F. M., Bhat, J., Collins, D., Cook, L., Craford, M. G., Fletcher, R., … Wierer, J. J. (2002). High power LEDs - Technology status and market applications. Physica Status Solidi a-Applied Research, 194(2), 380–388. https://doi.org/10.1002/1521-396x(200212)194:2<380::aid-pssa380>3.0.co;2-n

Krames, M. R., Collins, J. B. D., Gardner, N. F., Gotz, W., Lowery, C. H., Ludowise, M., … Wierer, J. J. (2002). High-power III-nitride emitters for solid-state lighting. Physica Status Solidi a-Applied Research, 192(2), 237–245. https://doi.org/10.1002/1521-396x(200208)192:2<237::aid-pssa237>3.0.co;2-i

High-power AlGaInN flip-chip light-emitting diodes. (2001). Applied Physics Letters, 78(22), 3379–3381. https://doi.org/10.1063/1.1374499

Kim, A. Y., Gotz, W., Steigerwald, D. A., Wierer, J. J., Gardner, N. F., Sun, J., … Steranka, F. M. (2001). Performance of high-power AlInGaN light emitting diodes. Physica Status Solidi a-Applied Research, 188(1), 15–21. https://doi.org/10.1002/1521-396x(200111)188:1<15::aid-pssa15>3.0.co;2-5

Yao, H. W., Ferguson, I. T., & Schubert, E. F. (Eds.). (2000). High-brightness AlGaInN light-emitting diodes. In Light-Emitting Diodes: Research, Manufacturing, and Applications Iv (Vol. 3938, pp. 2–12). https://doi.org/10.1117/12.382822

Wierer, J. J., Kellogg, D. A., & Holonyak, N. (1999). Tunnel contact junction native-oxide aperture and mirror vertical-cavity surface-emitting lasers and resonant-cavity light-emitting diodes. Applied Physics Letters, 74(7), 926–928. https://doi.org/10.1063/1.123452

Evans, P. W., Wierer, J. J., & Holonyak, N. (1998). AlxGa1-xAs native-oxide-based distributed Bragg reflectors for vertical cavity surface emitting lasers. Journal of Applied Physics, 84(10), 5436–5440. https://doi.org/10.1063/1.368857

Wierer, J. J., Evans, P. W., & Holonyak, N. (1998). Transition from edge to vertical cavity operation of tunnel contact AlGaAs-GaAs-InGaAs quantum well heterostructure lasers. Applied Physics Letters, 72(7), 797–799. https://doi.org/10.1063/1.120869

Wierer, J. J., Evans, P. W., Holonyak, N., & Kellogg, D. A. (1998). Vertical cavity surface emitting lasers utilizing native oxide mirrors and buried tunnel contact junctions. Applied Physics Letters, 72(21), 2742–2744. https://doi.org/10.1063/1.121445

Wierer, J. J., Evans, P. W., & Holonyak, N. (1997). Buried tunnel contact junction AlGaAs-GaAs-InGaAs quantum well heterostructure lasers with oxide-defined lateral currents. Applied Physics Letters, 71(16), 2286–2288. https://doi.org/10.1063/1.120071

Wierer, J. J., Evans, P. W., Holonyak, N., & Kellogg, D. A. (1997). Lateral electron current operation of vertical cavity surface emitting lasers with buried tunnel contact hole sources. Applied Physics Letters, 71(24), 3468–3470. https://doi.org/10.1063/1.120400

Evans, P. W., Wierer, J. J., & Holonyak, N. (1997). Photopumped laser operation of an oxide post GaAs-AlAs superlattice photonic lattice. Applied Physics Letters, 70(9), 1119–1121. https://doi.org/10.1063/1.118480

Wierer, J. J., Maranowski, S. A., Holonyak, N., Evans, P. W., & Chen, E. I. (1996). Double injection and negative resistance in stripe-geometry oxide-aperture AlyGa1-yAs-GaAs-InxGa1-xAs quantum well heterostructure laser diodes. Applied Physics Letters, 69(19), 2882–2884. https://doi.org/10.1063/1.117350

Coleman, P. D., & Wierer, J. J. (1995). ESTABLISHMENT OF A DYNAMIC-MODEL FOR THE P-GE FAR IR LASER. International Journal of Infrared and Millimeter Waves, 16(1), 3–32. https://doi.org/10.1007/bf02085845