Ji Hyun Kim

College of Engineering

Works (8)

Updated: July 26th, 2023 21:14

2022 journal article

Doping and compensation in heavily Mg doped Al-rich AlGaN films

APPLIED PHYSICS LETTERS, 120(8).

By: P. Bagheri n, A. Klump n, S. Washiyama n, M. Breckenridge n, J. Kim n, Y. Guan n, D. Khachariya n, C. Quinones-Garcia n ...

Sources: Web Of Science, ORCID
Added: June 20, 2022

2022 article

Large-Area, Solar-Blind, Sub-250 nm Detection AlGaN Avalanche Photodiodes Grown on AlN Substrates

Reddy, P., Mecouch, W., Breckenridge, M. H., Khachariya, D., Bagheri, P., Kim, J. H., … Sitar, Z. (2022, March 10). PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, Vol. 3.

By: P. Reddy*, W. Mecouch*, M. Breckenridge n, D. Khachariya n, P. Bagheri n, J. Kim n, Y. Guan n, S. Mita* ...

author keywords: AlGaN; APD; UVC
Sources: Web Of Science, ORCID
Added: March 11, 2022

2021 journal article

A pathway to highly conducting Ge-doped AlGaN

JOURNAL OF APPLIED PHYSICS, 130(20).

By: P. Bagheri n, J. Kim n, S. Washiyama n, P. Reddy*, A. Klump n, R. Kirste*, S. Mita*, R. Collazo n, Z. Sitar n

Sources: Web Of Science, ORCID
Added: November 23, 2021

2021 journal article

On the Ge shallow-to-deep level transition in Al-rich AlGaN

JOURNAL OF APPLIED PHYSICS, 130(5).

By: P. Bagheri n, P. Reddy*, S. Mita*, D. Szymanski n, J. Kim n, Y. Guan n, D. Khachariya n, A. Klump n ...

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Sources: Web Of Science, ORCID
Added: August 4, 2021

2021 journal article

Self-compensation in heavily Ge doped AlGaN: A comparison to Si doping

APPLIED PHYSICS LETTERS, 118(4).

By: S. Washiyama n, K. Mirrielees n, P. Bagheri n, J. Baker n, J. Kim n, Q. Guo n, R. Kirste*, Y. Guan n ...

Sources: Web Of Science, ORCID
Added: March 29, 2021

2021 journal article

Study on avalanche breakdown and Poole-Frenkel emission in Al-rich AlGaN grown on single crystal AlN

APPLIED PHYSICS LETTERS, 119(18).

By: P. Reddy*, D. Khachariya n, W. Mecouch*, M. Breckenridge n, P. Bagheri n, Y. Guan n, J. Kim n, S. Pavlidis n ...

Sources: Web Of Science, ORCID
Added: November 3, 2021

2021 journal article

Substrate Modification during Chemical Vapor Deposition of hBN on Sapphire

ACS APPLIED MATERIALS & INTERFACES, 13(45), 54516–54526.

By: A. Bansal*, M. Hilse*, B. Huet*, K. Wang*, A. Kozhakhmetov*, J. Kim n, S. Bachu*, N. Alem* ...

author keywords: chemical vapor deposition; hexagonal boron nitride; 2D material; III-V nitrides; surface reconstruction; RHEED; dielectric breakdown
TL;DR: Under the typical growth conditions required for high crystalline quality hBN growth, A-plane sapphire provides a more chemically stable substrate, thus providing a more stable alternative substrate for high quality hbn growth. (via Semantic Scholar)
Sources: Web Of Science, ORCID
Added: February 21, 2022

2021 journal article

Temperature dependence of electronic bands in Al/GaN by utilization of invariant deep defect transition energies

APPLIED PHYSICS LETTERS, 119(2).

By: J. Kim n, P. Bagheri n, S. Washiyama n, A. Klump n, R. Kirste*, S. Mita*, P. Reddy*, R. Collazo n, Z. Sitar n

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Sources: Web Of Science, ORCID
Added: July 26, 2021

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