Ji Hyun Kim
College of Engineering
Works (8)
Updated: July 26th, 2023 21:14
2022 journal article
Doping and compensation in heavily Mg doped Al-rich AlGaN films
APPLIED PHYSICS LETTERS, 120(8).
Contributors: P. Bagheri n, A. Klump n, S. Washiyama n, M. Hayden Breckenridge n, n, Y. Guan n, D. Khachariya n, C. Quiñones-García n
Sources: Web Of Science, NC State University Libraries, ORCID
Added: June 20, 2022
2022 article
Large-Area, Solar-Blind, Sub-250 nm Detection AlGaN Avalanche Photodiodes Grown on AlN Substrates
Reddy, P., Mecouch, W., Breckenridge, M. H., Khachariya, D., Bagheri, P., Kim, J. H., … Sitar, Z. (2022, March 10). PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, Vol. 3.
Contributors: P. Reddy* , W. Mecouch*, M. Hayden Breckenridge n, D. Khachariya n, P. Bagheri n, J. Hyun Kim n, Y. Guan n, S. Mita*
author keywords: AlGaN; APD; UVC
Sources: Web Of Science, ORCID, NC State University Libraries
Added: March 11, 2022
2021 journal article
A pathway to highly conducting Ge-doped AlGaN
JOURNAL OF APPLIED PHYSICS, 130(20).
Contributors: P. Bagheri n, n, S. Washiyama n, P. Reddy* , A. Klump n, R. Kirste*, S. Mita*, R. Collazo n , Z. Sitar n
Sources: Web Of Science, ORCID, NC State University Libraries
Added: November 23, 2021
2021 journal article
On the Ge shallow-to-deep level transition in Al-rich AlGaN
JOURNAL OF APPLIED PHYSICS, 130(5).
Contributors: P. Bagheri n, P. Reddy n , S. Mita n, D. Szymanski n, n, Y. Guan n, D. Khachariya n, A. Klump n
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(OpenAlex)
Sources: Web Of Science, ORCID, NC State University Libraries
Added: August 4, 2021
2021 journal article
Self-compensation in heavily Ge doped AlGaN: A comparison to Si doping
APPLIED PHYSICS LETTERS, 118(4).
Contributors: S. Washiyama n, K. Mirrielees n, P. Bagheri n, J. Baker n, n, Q. Guo n, R. Kirste*, Y. Guan n
Sources: Web Of Science, NC State University Libraries, ORCID
Added: March 29, 2021
2021 journal article
Study on avalanche breakdown and Poole-Frenkel emission in Al-rich AlGaN grown on single crystal AlN
APPLIED PHYSICS LETTERS, 119(18).
Contributors: P. Reddy* , D. Khachariya n, W. Mecouch *, M. Breckenridge n, P. Bagheri n, Y. Guan n, n, S. Pavlidis n
Sources: Web Of Science, ORCID, NC State University Libraries
Added: November 3, 2021
2021 journal article
Substrate Modification during Chemical Vapor Deposition of hBN on Sapphire
ACS APPLIED MATERIALS & INTERFACES, 13(45), 54516–54526.
author keywords: chemical vapor deposition; hexagonal boron nitride; 2D material; III-V nitrides; surface reconstruction; RHEED; dielectric breakdown
TL;DR:
Under the typical growth conditions required for high crystalline quality hBN growth, A-plane sapphire provides a more chemically stable substrate, thus providing a more stable alternative substrate for high quality hbn growth.
(via Semantic Scholar)
Sources: Web Of Science, NC State University Libraries
Added: February 21, 2022
2021 journal article
Temperature dependence of electronic bands in Al/GaN by utilization of invariant deep defect transition energies
APPLIED PHYSICS LETTERS, 119(2).
Contributors: n, P. Bagheri n, S. Washiyama n, A. Klump n, R. Kirste*, S. Mita*, P. Reddy* , R. Collazo n , Z. Sitar n
open access via aip.scitation.org (publisher PDF)
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(OpenAlex)
Sources: Web Of Science, NC State University Libraries, ORCID
Added: July 26, 2021
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