Jinggang Lu

Firefighters’ exposure to per-and polyfluoroalkyl substances (PFAS) as an occupational hazard: A review

Mazumder, N.-U.-S., Hossain, M. T., Jahura, F. T., Girase, A., Hall, A. S., Lu, J., & Ormond, R. B. (2023, March 23). Frontiers in Materials, Vol. 10.

Hydrogen passivation of deep energy levels at the interfacial grain boundary in (110)/(100) bonded silicon wafers

Journal of Applied Physics, 105(1).

Investigation of iron impurity gettering at dislocations in a SiGe/Si heterostructure

Journal of Applied Physics, 105(7).

Proximity gettering of Cu at a (110)/(001) grain boundary interface formed by direct silicon bonding

Applied Physics Letters, 94(22).

Capacitance transient and current-/capacitance-voltage study of direct silicon bonded (110)/(100) interface

Applied Physics Letters, 92(26).

Capacitance transient study of the influence of iron contamination on the electrical characteristics of silicon grain boundaries

Applied Physics Letters, 92(8).

Carrier lifetime limitation defects in polycrystalline silicon ribbons grown on substrate (RGS)

Lu, J., Rozgonyi, G. A., & Schönecker, A. (2008, February 1). Materials Science in Semiconductor Processing.

Deep level transient spectroscopy and capacitance-voltage study of dislocations and associated defects in SiGe/Si heterostructures

Journal of Applied Physics, 103(7).

Deep-level transient spectroscopy study on direct silicon bonded (110)/(100) interfacial grain boundary

Semiconductor Science and Technology, 23(12).

Effect of strained-Si layer thickness on dislocation distribution and SiGe relaxation in strained-Si/SiGe heterostructures

Journal of Applied Physics, 104(7).

Impact of Cu contamination on the electrical properties of a direct silicon bonded (110)/(100) interfacial grain boundary

Journal of Applied Physics, 104(11).

Carrier capture cross sections of deep gap states at the interfacial grain boundary in a (110)/(100) bonded silicon wafer

Applied Physics Letters, 91(17).

Oxygen and Carbon Precipitation in Crystalline Sheet Silicon

Lu, J., & Rozgonyi, G. (2006, January 1). Journal of The Electrochemical Society.

EBIC study of electrical activity of stacking faults in multicrystalline sheet silicon

Proceedings of the 9th International Autumn Meeting: Gettering and defect engineering in semiconductor technology: GADEST 2001, S. Tecla, Italy, September 30-October 3, 2001 (Solid state phenomena), 108-109, 627–630. Uetikon-Zurich, Switzerland: Sci-Tech Pub. Ltd.; Enfield, N.H.: Trans Tech Pub. Ltd.

Impact of oxygen on carbon precipitation in polycrystalline ribbon silicon

Journal of Applied Physics, 97(3).

Evaluation of silicon sheet film growth and wafer processing via structural, chemical and electrical diagnostics

Diffusion and Defect Data. [Pt. B], Solid State Phenomena, 95-96, 211–216.

Oxygen precipitate denuded zone in polycrystalline sheet silicon

Lu, J., Rozgonyi, G., Rand, J., & Jonczyk, R. (2004, August 10). Applied Physics Letters.

Secondary phase inclusions in polycrystalline sheet silicon

Lu, J., Rozgonyi, G., Rand, J., & Jonczyk, R. (2004, June 18). Journal of Crystal Growth.

Effects of grain boundary on impurity gettering and oxygen precipitation in polycrystalline sheet silicon

Lu, J., Wagener, M., Rozgonyi, G., Rand, J., & Jonczyk, R. (2003, June 30). Journal of Applied Physics.

Molecular Motions in the Supramolecular Complexes between Poly(ɛ-caprolactone)-Poly(ethylene oxide)-Poly(ɛ-caprolactone) andα- andγ-Cyclodextrins

Lu, J., Mirau, P. A., Shin, I. D., Nojima, S., & Tonelli, A. E. (2002, January 1). Macromolecular Chemistry and Physics.