2023 review
Firefighters' exposure to per-and polyfluoroalkyl substances (PFAS) as an occupational hazard: A review
[Review of ]. FRONTIERS IN MATERIALS, 10.
Contributors: N. Mazumder n , M. Hossain n, F. Jahura n , A. Girase n , A. Hall n , J. Lu n, R. Ormond n
2009 journal article
Hydrogen passivation of deep energy levels at the interfacial grain boundary in (110)/(100) bonded silicon wafers
Journal of Applied Physics, 105(1).
2009 journal article
Investigation of iron impurity gettering at dislocations in a SiGe/Si heterostructure
Journal of Applied Physics, 105(7).
2009 journal article
Proximity gettering of Cu at a (110)/(001) grain boundary interface formed by direct silicon bonding
Applied Physics Letters, 94(22).
2008 journal article
Capacitance transient and current-/capacitance-voltage study of direct silicon bonded (110)/(100) interface
Applied Physics Letters, 92(26).
2008 journal article
Capacitance transient study of the influence of iron contamination on the electrical characteristics of silicon grain boundaries
Applied Physics Letters, 92(8).
2008 journal article
Carrier lifetime limitation defects in polycrystalline silicon ribbons grown on substrate (RGS)
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 11(1), 20–24.
2008 journal article
Deep level transient spectroscopy and capacitance-voltage study of dislocations and associated defects in SiGe/Si heterostructures
Journal of Applied Physics, 103(7).
2008 journal article
Deep-level transient spectroscopy study on direct silicon bonded (110)/(100) interfacial grain boundary
Semiconductor Science and Technology, 23(12).
2008 journal article
Effect of strained-Si layer thickness on dislocation distribution and SiGe relaxation in strained-Si/SiGe heterostructures
Journal of Applied Physics, 104(7).
2008 journal article
Impact of Cu contamination on the electrical properties of a direct silicon bonded (110)/(100) interfacial grain boundary
Journal of Applied Physics, 104(11).
2007 journal article
Carrier capture cross sections of deep gap states at the interfacial grain boundary in a (110)/(100) bonded silicon wafer
Applied Physics Letters, 91(17).
2006 journal article
Oxygen and carbon precipitation in crystalline sheet silicon - Depth profiling by infrared spectroscopy, and preferential defect etching
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 153(11), G986–G991.
2005 conference paper
EBIC study of electrical activity of stacking faults in multicrystalline sheet silicon
Proceedings of the 9th International Autumn Meeting: Gettering and defect engineering in semiconductor technology: GADEST 2001, S. Tecla, Italy, September 30-October 3, 2001 (Solid state phenomena), 108-109, 627–630. Uetikon-Zurich, Switzerland: Sci-Tech Pub. Ltd.; Enfield, N.H.: Trans Tech Pub. Ltd.
2005 journal article
Impact of oxygen on carbon precipitation in polycrystalline ribbon silicon
Journal of Applied Physics, 97(3).
2004 journal article
Evaluation of silicon sheet film growth and wafer processing via structural, chemical and electrical diagnostics
Diffusion and Defect Data. [Pt. B], Solid State Phenomena, 95-96, 211–216.
2004 journal article
Oxygen precipitate denuded zone in polycrystalline sheet silicon
APPLIED PHYSICS LETTERS, 85(7), 1178–1180.
2004 journal article
Secondary phase inclusions in polycrystalline sheet silicon
JOURNAL OF CRYSTAL GROWTH, 269(2-4), 599–605.
2003 journal article
Effects of grain boundary on impurity gettering and oxygen precipitation in polycrystalline sheet silicon
JOURNAL OF APPLIED PHYSICS, 94(1), 140–144.
2002 journal article
Molecular motions in the supramolecular complexes between poly(epsilon-caprolactone)-poly(ethylene oxide)-poly(epsilon-caprolactone) and alpha- and gamma-cyclodextrins
MACROMOLECULAR CHEMISTRY AND PHYSICS, 203(1), 71–79.
Citation Index includes data from a number of different sources. If you have questions about the sources of data in the Citation Index or need a set of data which is free to re-distribute, please contact us.
Certain data included herein are derived from the Web of Science© and InCites© (2024) of Clarivate Analytics. All rights reserved. You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.