2009 journal article

Hydrogen passivation of deep energy levels at the interfacial grain boundary in (110)/(100) bonded silicon wafers

Journal of Applied Physics, 105(1).

By: Y. Park, J. Lu & G. Rozgonyi

Source: NC State University Libraries
Added: August 6, 2018

2009 journal article

Investigation of iron impurity gettering at dislocations in a SiGe/Si heterostructure

Journal of Applied Physics, 105(7).

By: J. Lu, X. Yu, Y. Park & G. Rozgonyi

Source: NC State University Libraries
Added: August 6, 2018

2009 journal article

Proximity gettering of Cu at a (110)/(001) grain boundary interface formed by direct silicon bonding

Applied Physics Letters, 94(22).

By: X. Yu, J. Lu, K. Youssef & G. Rozgonyi

Source: NC State University Libraries
Added: August 6, 2018

2008 journal article

Capacitance transient and current-/capacitance-voltage study of direct silicon bonded (110)/(100) interface

Applied Physics Letters, 92(26).

By: X. Yu, J. Lu & G. Rozgonyi

Source: NC State University Libraries
Added: August 6, 2018

2008 journal article

Capacitance transient study of the influence of iron contamination on the electrical characteristics of silicon grain boundaries

Applied Physics Letters, 92(8).

By: J. Lu & G. Rozgonyi

Source: NC State University Libraries
Added: August 6, 2018

2008 journal article

Carrier lifetime limitation defects in polycrystalline silicon ribbons grown on substrate (RGS)

Materials Science in Semiconductor Processing, 11(1), 20–24.

By: J. Lu, G. Rozgonyi & A. Schonecker

Source: NC State University Libraries
Added: August 6, 2018

2008 journal article

Deep level transient spectroscopy and capacitance-voltage study of dislocations and associated defects in SiGe/Si heterostructures

Journal of Applied Physics, 103(7).

By: J. Lu, Y. Park & G. Rozgonyi

Source: NC State University Libraries
Added: August 6, 2018

2008 journal article

Deep-level transient spectroscopy study on direct silicon bonded (110)/(100) interfacial grain boundary

Semiconductor Science and Technology, 23(12).

By: X. Yu, J. Lu & G. Rozgonyi

Source: NC State University Libraries
Added: August 6, 2018

2008 journal article

Effect of strained-Si layer thickness on dislocation distribution and SiGe relaxation in strained-Si/SiGe heterostructures

Journal of Applied Physics, 104(7).

By: J. Lu, G. Rozgonyi, M. Seacrist, M. Chaumont & A. Campion

Source: NC State University Libraries
Added: August 6, 2018

2008 journal article

Impact of Cu contamination on the electrical properties of a direct silicon bonded (110)/(100) interfacial grain boundary

Journal of Applied Physics, 104(11).

By: X. Yu, J. Lu & G. Rozgonyi

Source: NC State University Libraries
Added: August 6, 2018

2007 journal article

Carrier capture cross sections of deep gap states at the interfacial grain boundary in a (110)/(100) bonded silicon wafer

Applied Physics Letters, 91(17).

By: J. Lu & G. Rozgonyi

Source: NC State University Libraries
Added: August 6, 2018

2006 journal article

Oxygen and carbon precipitation in crystalline sheet silicon - Depth profiling by infrared spectroscopy, and preferential defect etching

Journal of the Electrochemical Society, 153(11), G986–991.

By: J. Lu & G. Rozgonyi

Source: NC State University Libraries
Added: August 6, 2018

2005 conference paper

EBIC study of electrical activity of stacking faults in multicrystalline sheet silicon

Proceedings of the 9th International Autumn Meeting: Gettering and defect engineering in semiconductor technology: GADEST 2001, S. Tecla, Italy, September 30-October 3, 2001 (Solid state phenomena), 108-109, 627–630. Uetikon-Zurich, Switzerland: Sci-Tech Pub. Ltd.; Enfield, N.H.: Trans Tech Pub. Ltd.

By: J. Lu, G. Rozgonyi, J. Rand & R. Jonczyk

Source: NC State University Libraries
Added: August 6, 2018

2005 journal article

Impact of oxygen on carbon precipitation in polycrystalline ribbon silicon

Journal of Applied Physics, 97(3).

By: J. Lu, G. Rozgonyi, A. Schonecker, A. Gutjahr & Z. Liu

Source: NC State University Libraries
Added: August 6, 2018

2004 journal article

Evaluation of silicon sheet film growth and wafer processing via structural, chemical and electrical diagnostics

Diffusion and Defect Data. [Pt. B], Solid State Phenomena, 95-96, 211–216.

By: G. Rozgonyi, J. Lu, R. Zhang, J. Rand & R. Jonczyk

Source: NC State University Libraries
Added: August 6, 2018

2004 journal article

Oxygen precipitate denuded zone in polycrystalline sheet silicon

Applied Physics Letters, 85(7), 1178–1180.

By: J. Lu, G. Rozgonyi, J. Rand & R. Jonczyk

Source: NC State University Libraries
Added: August 6, 2018

2004 journal article

Secondary phase inclusions in polycrystalline sheet silicon

Journal of Crystal Growth, 269(2/4), 599–605.

By: J. Lu, G. Rozgonyi, J. Rand & R. Jonczyk

Source: NC State University Libraries
Added: August 6, 2018

2003 journal article

Effects of grain boundary on impurity gettering and oxygen precipitation in polycrystalline sheet silicon

Journal of Applied Physics, 94(1), 140–144.

By: J. Lu, M. Wagener, G. Rozgonyi, J. Rand & R. Jonczyk

Source: NC State University Libraries
Added: August 6, 2018

2002 journal article

Molecular motions in the supramolecular complexes between poly(epsilon-caprolactone)-poly(ethylene oxide)-poly(epsilon- caprolactone) and alpha- and gamma-cyclodextrins

Macromolecular Chemistry and Physics, 203(1), 71–79.

By: J. Lu, P. Mirau, I. Shin, S. Nojima & A. Tonelli

Source: NC State University Libraries
Added: August 6, 2018