@misc{mazumder_hossain_jahura_girase_hall_lu_ormond_2023, title={Firefighters' exposure to per-and polyfluoroalkyl substances (PFAS) as an occupational hazard: A review}, volume={10}, ISSN={["2296-8016"]}, DOI={10.3389/fmats.2023.1143411}, abstractNote={The term “firefighter” and “cancer” have become so intertwined in the past decade that they are now nearly inseparable. Occupational exposure of firefighters to carcinogenic chemicals may increase their risk of developing different types of cancer. PFAS are one of the major classes of carcinogenic chemicals that firefighters are exposed to as occupational hazard. Elevated levels of PFAS have been observed in firefighters’ blood serum in recent studies. Possible sources of occupational exposure to PFAS include turnout gear, aqueous film-forming foam, and air and dust at both the fire scene and fire station. Preliminary discussion on PFAS includes definition, classification, and chemical structure. The review is then followed by identifying the sources of PFAS that firefighters may encounter as an occupational hazard. The structural properties of the PFAS used in identified sources, their degradation, and exposure pathways are reviewed. The elevated level of PFAS in the blood serum and how this might associate with an increased risk of cancer is discussed. Our review shows a significant amount of PFAS on turnout gear and their migration to untreated layers, and how turnout gear itself might be a potential source of PFAS exposure. PFAS from aqueous film-forming foams (AFFF), air, and dust of fire stations have been already established as potential exposure sources. Studies on firefighters’ cancer suggest that firefighters have a higher cancer risk compared to the general population. This review suggests that increased exposure to PFAS as an occupational hazard could be a potential cancer risk for firefighters.}, journal={FRONTIERS IN MATERIALS}, publisher={Frontiers Media SA}, author={Mazumder, Nur-Us-Shafa and Hossain, Md Tanjim and Jahura, Fatema Tuj and Girase, Arjunsing and Hall, Andrew Stephen and Lu, Jingtian and Ormond, R. Bryan}, year={2023}, month={Mar} }
 @article{park_lu_rozgonyi_2009, title={Hydrogen passivation of deep energy levels at the interfacial grain boundary in (110)/(100) bonded silicon wafers}, volume={105}, number={1}, journal={Journal of Applied Physics}, author={Park, Y. and Lu, J. and Rozgonyi, G.}, year={2009} }
 @article{lu_yu_park_rozgonyi_2009, title={Investigation of iron impurity gettering at dislocations in a SiGe/Si heterostructure}, volume={105}, number={7}, journal={Journal of Applied Physics}, author={Lu, J. G. and Yu, X. G. and Park, Y. and Rozgonyi, G.}, year={2009} }
 @article{yu_lu_youssef_rozgonyi_2009, title={Proximity gettering of Cu at a (110)/(001) grain boundary interface formed by direct silicon bonding}, volume={94}, number={22}, journal={Applied Physics Letters}, author={Yu, X. and Lu, J. and Youssef, K. and Rozgonyi, G.}, year={2009} }
 @article{yu_lu_rozgonyi_2008, title={Capacitance transient and current-/capacitance-voltage study of direct silicon bonded (110)/(100) interface}, volume={92}, number={26}, journal={Applied Physics Letters}, author={Yu, X. G. and Lu, J. G. and Rozgonyi, G.}, year={2008} }
 @article{lu_rozgonyi_2008, title={Capacitance transient study of the influence of iron contamination on the electrical characteristics of silicon grain boundaries}, volume={92}, number={8}, journal={Applied Physics Letters}, author={Lu, J. G. and Rozgonyi, G.}, year={2008} }
 @article{lu_rozgonyi_schonecker_2008, title={Carrier lifetime limitation defects in polycrystalline silicon ribbons grown on substrate (RGS)}, volume={11}, ISSN={["1873-4081"]}, DOI={10.1016/j.mssp.2008.07.001}, abstractNote={Carrier lifetime limitation defects in polycrystalline silicon ribbons have been examined in samples with high oxygen and carbon content. Infrared spectroscopy showed that essentially all supersaturated oxygen impurities precipitated within 1 h annealing at over 800 °C. Preferential defect etching revealed that a much higher density of oxygen precipitates were generated in dislocation-free grains than in those highly dislocated (105–107 cm−2) ones. Correlated with electron-beam-induced current imaging, we found that oxygen precipitates are the dominant carrier recombination defects in dislocation-free grains, while dislocations are the lifetime killer for highly dislocated grains. It is suggested that eliminating dislocations alone will not improve the carrier lifetime, considering that a higher density of oxygen precipitates formed in the absence of dislocation-related heterogeneous nucleation sites will significantly degrade the carrier lifetime.}, number={1}, journal={MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING}, author={Lu, Jinggang and Rozgonyi, George A. and Schonecker, Axel}, year={2008}, month={Feb}, pages={20–24} }
 @article{lu_park_rozgonyi_2008, title={Deep level transient spectroscopy and capacitance-voltage study of dislocations and associated defects in SiGe/Si heterostructures}, volume={103}, number={7}, journal={Journal of Applied Physics}, author={Lu, J. G. and Park, Y. K. and Rozgonyi, G. A.}, year={2008} }
 @article{yu_lu_rozgonyi_2008, title={Deep-level transient spectroscopy study on direct silicon bonded (110)/(100) interfacial grain boundary}, volume={23}, number={12}, journal={Semiconductor Science and Technology}, author={Yu, X. G. and Lu, J. G. and Rozgonyi, G.}, year={2008} }
 @article{lu_rozgonyi_seacrist_chaumont_campion_2008, title={Effect of strained-Si layer thickness on dislocation distribution and SiGe relaxation in strained-Si/SiGe heterostructures}, volume={104}, number={7}, journal={Journal of Applied Physics}, author={Lu, J. G. and Rozgonyi, G. and Seacrist, M. and Chaumont, M. and Campion, A.}, year={2008} }
 @article{yu_lu_rozgonyi_2008, title={Impact of Cu contamination on the electrical properties of a direct silicon bonded (110)/(100) interfacial grain boundary}, volume={104}, number={11}, journal={Journal of Applied Physics}, author={Yu, X. G. and Lu, J. G. and Rozgonyi, G.}, year={2008} }
 @article{lu_rozgonyi_2007, title={Carrier capture cross sections of deep gap states at the interfacial grain boundary in a (110)/(100) bonded silicon wafer}, volume={91}, number={17}, journal={Applied Physics Letters}, author={Lu, J. and Rozgonyi, G.}, year={2007} }
 @article{lu_rozgonyi_2006, title={Oxygen and carbon precipitation in crystalline sheet silicon - Depth profiling by infrared spectroscopy, and preferential defect etching}, volume={153}, ISSN={["1945-7111"]}, DOI={10.1149/1.2347103}, abstractNote={The depth variation of oxygen and carbon precipitation in multicrystalline sheet silicon has been examined by infrared microspectroscopy, electron-beam induced current (EBIC), and preferential defect etching. Experimental results on the depth profiles of interstitial oxygen (O i ), substitutional carbon (C s ), and oxygen precipitates, plus numerical analyses of vacancy-interstitial distribution indicate that oxygen precipitation is controlled by the initial O i concentration and quenched-in vacancies. In addition, it is found that the C s depth profile in the annealed samples mimics the O i profile. Examination of the precipitate density and the C s reduction rate allows us to show that formation of interstitial carbon by capturing self-interstitials generated during oxygen precipitation is a necessary step in explaining the fast C s reduction. From the fact that the carbon precipitation rate is controlled not only by the self-interstitial generation, but also by the precipitate density, it is suggested that the generated interstitial carbon impurities are most likely to coprecipitate at common sites with O i .}, number={11}, journal={JOURNAL OF THE ELECTROCHEMICAL SOCIETY}, author={Lu, Jinggang and Rozgonyi, George}, year={2006}, pages={G986–G991} }
 @inproceedings{lu_rozgonyi_rand_jonczyk_2005, title={EBIC study of electrical activity of stacking faults in multicrystalline sheet silicon}, volume={108-109}, ISBN={3908450640}, booktitle={Proceedings of the 9th International Autumn Meeting: Gettering and defect engineering in semiconductor technology: GADEST 2001, S. Tecla, Italy, September 30-October 3, 2001 (Solid state phenomena)}, publisher={Uetikon-Zurich, Switzerland: Sci-Tech Pub. Ltd.;  Enfield, N.H.: Trans Tech Pub. Ltd.}, author={Lu, J. G. and Rozgonyi, G. and Rand, J. and Jonczyk, R.}, year={2005}, pages={627–630} }
 @article{lu_rozgonyi_schonecker_gutjahr_liu_2005, title={Impact of oxygen on carbon precipitation in polycrystalline ribbon silicon}, volume={97}, number={3}, journal={Journal of Applied Physics}, author={Lu, J. G. and Rozgonyi, G. and Schonecker, A. and Gutjahr, A. and Liu, Z. X.}, year={2005} }
 @article{rozgonyi_lu_zhang_rand_jonczyk_2004, title={Evaluation of silicon sheet film growth and wafer processing via structural, chemical and electrical diagnostics}, volume={95-96}, journal={Diffusion and Defect Data. [Pt. B], Solid State Phenomena}, author={Rozgonyi, G. A. and Lu, J. and Zhang, R. and Rand, J. and Jonczyk, R.}, year={2004}, pages={211–216} }
 @article{lu_rozgonyi_rand_jonczyk_2004, title={Oxygen precipitate denuded zone in polycrystalline sheet silicon}, volume={85}, ISSN={["1077-3118"]}, DOI={10.1063/1.1781369}, abstractNote={The spatial variation of oxygen precipitation across the thickness of polycrystalline sheet silicon has been investigated by Fourier transform infrared (FTIR) microspectroscopy and preferential etching/optical microscopy. FTIR shows that interstitial oxygen is depleted near the top surface of the as-grown sample, thereby suppressing oxygen precipitation during subsequent annealing. Preferential etching and electron-beam-induced current imaging of polished cross sections revealed a 250-μm-wide precipitate denuded zone near the top surface. Evidently, growth-induced near-surface reduction of the oxygen profile keeps the oxygen supersaturation below a critical level for precipitate nucleation. Considering that the minority carrier diffusion length of current finished sheet silicon solar cells ranges from 50to100μm, it is anticipated that optimization of the 250-μm-wide precipitate denuded zone will improve solar cell performance.}, number={7}, journal={APPLIED PHYSICS LETTERS}, author={Lu, JG and Rozgonyi, G and Rand, J and Jonczyk, R}, year={2004}, month={Aug}, pages={1178–1180} }
 @article{lu_rozgonyi_rand_jonczyk_2004, title={Secondary phase inclusions in polycrystalline sheet silicon}, volume={269}, ISSN={["1873-5002"]}, DOI={10.1016/j.jcrysgro.2004.05.022}, abstractNote={Secondary phase inclusions with a size of typically 1–3 μm were observed in polycrystalline sheet silicon samples by preferential etching/Normaski microscopy. The chemical compositions of these inclusions were characterized by secondary ion mass spectroscopy (SIMS) depth profile measurements. It was found that there are mainly two types of inclusions in the sheet Si: nitrogen-rich with trace oxygen, and carbon-rich with trace nitrogen. Fourier transform infrared (FTIR) spectroscopy results indicated that the nitrogen rich particles are either α-Si3N4 or silicon oxynitride, while the carbon rich particles are most likely a form of graphite. Microscopic cross-sectional FTIR determined that inclusions deeper in the wafer contain more oxygen than those near the top-surface. Chemical reactions between these included particles and molten Si are discussed based on a thermodynamic analysis. It is concluded that α-Si3N4 particles, formed either through Si–N2 reaction or incorporated from refractory materials, transform into oxynitrides in the deeper region where the dissolved oxygen exceeds 2.8×1017 cm−3.}, number={2-4}, journal={JOURNAL OF CRYSTAL GROWTH}, author={Lu, JG and Rozgonyi, G and Rand, J and Jonczyk, R}, year={2004}, month={Sep}, pages={599–605} }
 @article{lu_wagener_rozgonyi_rand_jonczyk_2003, title={Effects of grain boundary on impurity gettering and oxygen precipitation in polycrystalline sheet silicon}, volume={94}, ISSN={["0021-8979"]}, DOI={10.1063/1.1578699}, abstractNote={The effects of grain boundaries (GB) in polycrystalline sheet silicon on impurity gettering and oxygen precipitation were investigated by electron beam induced current (EBIC), deep level transient spectroscopy (DLTS), micro-Fourier-transform infrared spectroscopy (FTIR), and preferential etching/Normaski optical microscopy techniques. Both as-grown and thermally processed wafers were studied. A correlation between GB density and transition metal concentration was quantitatively established by combining DLTS and EBIC studies. It was found that four deep levels arising from Fe–B, Fe–Al, Cr–B, and Fei were present in the as-grown sample, and their concentrations decrease with increasing GB density. GB gettering was further verified by the presence of an EBIC image contrast halo around the GB. Preferential etching also revealed a precipitate density of 2×107 cm−2 on the GB. After processing, a clearly defined oxygen precipitate denuded zone formed around the GB with the interstitial oxygen concentration [Oi] decreased from 14.4 to 2.2×1017 cm−3. Micro-FTIR showed that, for both processed and as-grown samples, more silicon oxynitride appears in the GB than in the intragrain region. Since nitrogen enhances oxygen precipitation, it is likely that nitrogen preferentially precipitated on the GB during the wafer formation process and resulted in a nitrogen depletion zone, where oxygen precipitation was further suppressed and a denuded zone formed.}, number={1}, journal={JOURNAL OF APPLIED PHYSICS}, author={Lu, JG and Wagener, M and Rozgonyi, G and Rand, J and Jonczyk, R}, year={2003}, month={Jul}, pages={140–144} }
 @article{lu_mirau_shin_nojima_tonelli_2002, title={Molecular motions in the supramolecular complexes between poly(epsilon-caprolactone)-poly(ethylene oxide)-poly(epsilon-caprolactone) and alpha- and gamma-cyclodextrins}, volume={203}, ISSN={["1022-1352"]}, DOI={10.1002/1521-3935(20020101)203:1<71::AID-MACP71>3.0.CO;2-D}, abstractNote={The structure and molecular motions of the triblock copolymer PCL-PEO-PCL and its inclusion complexes with α- and γ-cyclodextrins (α- and γ-CDs) have been studied by solid-state NMR. Different cross-polarization dynamics have been observed for the guest polymer and host CDs. Guest-host magnetization exchange has been observed by proton spin lattice relaxation T 1 , proton spin lattice frame relaxation T 1ρ and 2D heteronuclear correlation experiments. A homogeneous phase has been observed for these complexes. Conventional relaxation experiments and 2D wide-line separation NMR with windowless isotropic mixing have been used to measure the chain dynamics. The results show that for localized molecular motion in the megahertz regime, the included PCL block chains are much more mobile than the crystalline PCL blocks in the bulk triblock copolymer. However, the mobility of the included PEO block chains is not very different from the amorphous PEO blocks of the bulk sample. The cooperative, long chain motions in the midkilohertz regime for pairs of PCL-PEO-PCL chains in their γ-CD channels seem more restricted than for the single PCL-PEO-PCL chains in the α-CD channels, however, they are not influencing the more localized, higher frequency megahertz motions.}, number={1}, journal={MACROMOLECULAR CHEMISTRY AND PHYSICS}, author={Lu, J and Mirau, PA and Shin, ID and Nojima, S and Tonelli, AE}, year={2002}, month={Jan}, pages={71–79} }