Jinggang Lu

Mazumder, N.-U.-S., Hossain, M. T., Jahura, F. T., Girase, A., Hall, A. S., Lu, J., & Ormond, R. B. (2023). [Review of Firefighters' exposure to per-and polyfluoroalkyl substances (PFAS) as an occupational hazard: A review]. FRONTIERS IN MATERIALS, 10. https://doi.org/10.3389/fmats.2023.1143411

Park, Y., Lu, J., & Rozgonyi, G. (2009). Hydrogen passivation of deep energy levels at the interfacial grain boundary in (110)/(100) bonded silicon wafers. Journal of Applied Physics, 105(1).

Lu, J. G., Yu, X. G., Park, Y., & Rozgonyi, G. (2009). Investigation of iron impurity gettering at dislocations in a SiGe/Si heterostructure. Journal of Applied Physics, 105(7).

Yu, X., Lu, J., Youssef, K., & Rozgonyi, G. (2009). Proximity gettering of Cu at a (110)/(001) grain boundary interface formed by direct silicon bonding. Applied Physics Letters, 94(22).

Yu, X. G., Lu, J. G., & Rozgonyi, G. (2008). Capacitance transient and current-/capacitance-voltage study of direct silicon bonded (110)/(100) interface. Applied Physics Letters, 92(26).

Lu, J. G., & Rozgonyi, G. (2008). Capacitance transient study of the influence of iron contamination on the electrical characteristics of silicon grain boundaries. Applied Physics Letters, 92(8).

Lu, J., Rozgonyi, G. A., & Schonecker, A. (2008). Carrier lifetime limitation defects in polycrystalline silicon ribbons grown on substrate (RGS). MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 11(1), 20–24. https://doi.org/10.1016/j.mssp.2008.07.001

Lu, J. G., Park, Y. K., & Rozgonyi, G. A. (2008). Deep level transient spectroscopy and capacitance-voltage study of dislocations and associated defects in SiGe/Si heterostructures. Journal of Applied Physics, 103(7).

Yu, X. G., Lu, J. G., & Rozgonyi, G. (2008). Deep-level transient spectroscopy study on direct silicon bonded (110)/(100) interfacial grain boundary. Semiconductor Science and Technology, 23(12).

Lu, J. G., Rozgonyi, G., Seacrist, M., Chaumont, M., & Campion, A. (2008). Effect of strained-Si layer thickness on dislocation distribution and SiGe relaxation in strained-Si/SiGe heterostructures. Journal of Applied Physics, 104(7).

Yu, X. G., Lu, J. G., & Rozgonyi, G. (2008). Impact of Cu contamination on the electrical properties of a direct silicon bonded (110)/(100) interfacial grain boundary. Journal of Applied Physics, 104(11).

Lu, J., & Rozgonyi, G. (2007). Carrier capture cross sections of deep gap states at the interfacial grain boundary in a (110)/(100) bonded silicon wafer. Applied Physics Letters, 91(17).

Lu, J., & Rozgonyi, G. (2006). Oxygen and carbon precipitation in crystalline sheet silicon - Depth profiling by infrared spectroscopy, and preferential defect etching. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 153(11), G986–G991. https://doi.org/10.1149/1.2347103

Lu, J. G., Rozgonyi, G., Rand, J., & Jonczyk, R. (2005). EBIC study of electrical activity of stacking faults in multicrystalline sheet silicon. Proceedings of the 9th International Autumn Meeting: Gettering and defect engineering in semiconductor technology: GADEST 2001, S. Tecla, Italy, September 30-October 3, 2001 (Solid state phenomena), 108-109, 627–630. Uetikon-Zurich, Switzerland: Sci-Tech Pub. Ltd.;  Enfield, N.H.: Trans Tech Pub. Ltd.

Lu, J. G., Rozgonyi, G., Schonecker, A., Gutjahr, A., & Liu, Z. X. (2005). Impact of oxygen on carbon precipitation in polycrystalline ribbon silicon. Journal of Applied Physics, 97(3).

Rozgonyi, G. A., Lu, J., Zhang, R., Rand, J., & Jonczyk, R. (2004). Evaluation of silicon sheet film growth and wafer processing via structural, chemical and electrical diagnostics. Diffusion and Defect Data. [Pt. B], Solid State Phenomena, 95-96, 211–216.

Lu, J. G., Rozgonyi, G., Rand, J., & Jonczyk, R. (2004). Oxygen precipitate denuded zone in polycrystalline sheet silicon. APPLIED PHYSICS LETTERS, 85(7), 1178–1180. https://doi.org/10.1063/1.1781369

Lu, J. G., Rozgonyi, G., Rand, J., & Jonczyk, R. (2004). Secondary phase inclusions in polycrystalline sheet silicon. JOURNAL OF CRYSTAL GROWTH, 269(2-4), 599–605. https://doi.org/10.1016/j.jcrysgro.2004.05.022

Lu, J. G., Wagener, M., Rozgonyi, G., Rand, J., & Jonczyk, R. (2003). Effects of grain boundary on impurity gettering and oxygen precipitation in polycrystalline sheet silicon. JOURNAL OF APPLIED PHYSICS, 94(1), 140–144. https://doi.org/10.1063/1.1578699

Lu, J., Mirau, P. A., Shin, I. D., Nojima, S., & Tonelli, A. E. (2002). Molecular motions in the supramolecular complexes between poly(epsilon-caprolactone)-poly(ethylene oxide)-poly(epsilon-caprolactone) and alpha- and gamma-cyclodextrins. MACROMOLECULAR CHEMISTRY AND PHYSICS, 203(1), 71–79. https://doi.org/10.1002/1521-3935(20020101)203:1<71::AID-MACP71>3.0.CO;2-D