Joshua P. Samberg

GaInP/GaAs Tandem Solar Cells With InGaAs/GaAsP Multiple Quantum Wells

IEEE JOURNAL OF PHOTOVOLTAICS, 4(2), 614–619.

PbO networks composed of single crystalline nanosheets synthesized by a facile chemical precipitation method

MATERIALS RESEARCH BULLETIN, 51, 356–360.

Carrier Transport and Improved Collection in Thin-Barrier InGaAs/GaAsP Strained Quantum Well Solar Cells

IEEE JOURNAL OF PHOTOVOLTAICS, 3(1), 278–283.

Determination of carrier recombination lifetime in InGaAs quantum wells from external quantum efficiency measurements

2013 ieee 39th photovoltaic specialists conference (pvsc), 264–267.

Gallium nitride nanowires by maskless hot phosphoric wet etching

APPLIED PHYSICS LETTERS, 103(8).

Growth and Characterization of InxGa1-xAs/GaAs1-yPy Strained-Layer Superlattices with High Values of y (similar to 80%)

JOURNAL OF ELECTRONIC MATERIALS, 42(5), 912–917.

Interface properties of Ga(As,P)/(In,Ga)As strained multiple quantum well structures

APPLIED PHYSICS LETTERS, 103(7).

Minority Carrier Transport and Their Lifetime in InGaAs/GaAsP Multiple Quantum Well Structures

IEEE TRANSACTIONS ON ELECTRON DEVICES, 60(8), 2532–2536.

Modeling an InGaP/AlGaAs tunnel junction containing an AlAs diffusion barrier

2013 ieee 39th photovoltaic specialists conference (pvsc), 2082–2085.

Tandem InGaP/GaAs-quantum well solar cells and their potential improvement through phosphorus carry-over management in multiple quantum well structures

2013 ieee 39th photovoltaic specialists conference (pvsc), 1737–1740.

Effects of initial precursor and microwave irradiation on step-by-step synthesis of zinc oxide nano-architectures

Materials Letters, 67(1), 342–345.

Effects of morphology on photocatalytic performance of Zinc oxide nanostructures synthesized by rapid microwave irradiation methods

Superlattices and Microstructures, 51(4), 512–522.

Overgrowth of GaN on GaN nanowires produced by mask-less etching

Frajtag, P., Hosalli, A. M., Samberg, J. P., Colter, P. C., Paskova, T., El-Masry, N. A., & Bedair, S. M. (2012, August 1). JOURNAL OF CRYSTAL GROWTH, Vol. 352, pp. 203–208.

Embedded voids formation by overgrowth on GaN nanowires for high-quality GaN films

JOURNAL OF CRYSTAL GROWTH, 322(1), 27–32.

Staggered InGaAs/GaAsP strained layer superlattices for use in optical devices

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 208(12), 2884–2888.