Joshua P. Samberg

Bradshaw, G. K., Samberg, J. P., Carlin, C. Z., Colter, P. C., Edmondson, K. M., Hong, W., … Bedair, S. M. (2014). GaInP/GaAs Tandem Solar Cells With InGaAs/GaAsP Multiple Quantum Wells. IEEE JOURNAL OF PHOTOVOLTAICS, 4(2), 614–619. https://doi.org/10.1109/jphotov.2013.2294750

Samberg, J. P., Kajbafvala, A., & Koolivand, A. (2014). PbO networks composed of single crystalline nanosheets synthesized by a facile chemical precipitation method. MATERIALS RESEARCH BULLETIN, 51, 356–360. https://doi.org/10.1016/j.materresbull.2013.12.050

Bradshaw, G. K., Carlin, C. Z., Samberg, J. P., El-Masry, N. A., Colter, P. C., & Bedair, S. M. (2013). Carrier Transport and Improved Collection in Thin-Barrier InGaAs/GaAsP Strained Quantum Well Solar Cells. IEEE JOURNAL OF PHOTOVOLTAICS, 3(1), 278–283. https://doi.org/10.1109/jphotov.2012.2216858

Bradshaw, G. K., Carlin, C. Z., Samberg, J. P., Colter, P. C., & Bedair, S. M. (2013). Determination of carrier recombination lifetime in InGaAs quantum wells from external quantum efficiency measurements. 2013 ieee 39th photovoltaic specialists conference (pvsc), 264–267. https://doi.org/10.1109/pvsc.2013.6744143

Bharrat, D., Hosalli, A. M., Van Den Broeck, D. M., Samberg, J. P., Bedair, S. M., & El-Masry, N. A. (2013). Gallium nitride nanowires by maskless hot phosphoric wet etching. APPLIED PHYSICS LETTERS, 103(8). https://doi.org/10.1063/1.4819272

Samberg, J. P., Carlin, C. Z., Bradshaw, G. K., Colter, P. C., & Bedair, S. M. (2013). Growth and Characterization of InxGa1-xAs/GaAs1-yPy Strained-Layer Superlattices with High Values of y (similar to 80%). JOURNAL OF ELECTRONIC MATERIALS, 42(5), 912–917. https://doi.org/10.1007/s11664-012-2375-0

Samberg, J. P., Alipour, H. M., Bradshaw, G. K., Carlin, C. Z., Colter, P. C., LeBeau, J. M., … Bedair, S. M. (2013). Interface properties of Ga(As,P)/(In,Ga)As strained multiple quantum well structures. APPLIED PHYSICS LETTERS, 103(7). https://doi.org/10.1063/1.4818548

Carlin, C. Z., Bradshaw, G. K., Samberg, J. P., Colter, P. C., & Bedair, S. M. (2013). Minority Carrier Transport and Their Lifetime in InGaAs/GaAsP Multiple Quantum Well Structures. IEEE TRANSACTIONS ON ELECTRON DEVICES, 60(8), 2532–2536. https://doi.org/10.1109/ted.2013.2268421

Hauser, J., Carlin, Z., Harmon, J., Bradshaw, G., Samberg, J., Colter, P., & Bedair, S. (2013). Modeling an InGaP/AlGaAs tunnel junction containing an AlAs diffusion barrier. 2013 ieee 39th photovoltaic specialists conference (pvsc), 2082–2085. https://doi.org/10.1109/pvsc.2013.6744883

Samberg, J. P., Bradshaw, G. K., Carlin, C. Z., Colter, P. C., Edmondson, K., Hong, W., … Bedair, S. M. (2013). Tandem InGaP/GaAs-quantum well solar cells and their potential improvement through phosphorus carry-over management in multiple quantum well structures. 2013 ieee 39th photovoltaic specialists conference (pvsc), 1737–1740. https://doi.org/10.1109/pvsc.2013.6744479

Kajbafvala, A., Samberg, J. P., Ghorbani, H., Kajbafvala, E., & Sadrnezhaad, S. K. (2012). Effects of initial precursor and microwave irradiation on step-by-step synthesis of zinc oxide nano-architectures. Materials Letters, 67(1), 342–345.

Kajbafvala, A., Ghorbani, H., Paravar, A., Samberg, J. P., Kajbafvala, E., & Sadrnezhaad, S. K. (2012). Effects of morphology on photocatalytic performance of Zinc oxide nanostructures synthesized by rapid microwave irradiation methods. Superlattices and Microstructures, 51(4), 512–522.

Frajtag, P., Hosalli, A. M., Samberg, J. P., Colter, P. C., Paskova, T., El-Masry, N. A., & Bedair, S. M. (2012, August 1). Overgrowth of GaN on GaN nanowires produced by mask-less etching. JOURNAL OF CRYSTAL GROWTH, Vol. 352, pp. 203–208. https://doi.org/10.1016/j.jcrysgro.2011.12.055

Frajtag, P., Samberg, J. P., El-Masry, N. A., Nepal, N., & Bedair, S. M. (2011). Embedded voids formation by overgrowth on GaN nanowires for high-quality GaN films. JOURNAL OF CRYSTAL GROWTH, 322(1), 27–32. https://doi.org/10.1016/j.jcrysgro.2011.02.032

Colter, P. C., Carlin, C. Z., Samberg, J. P., Bradshaw, G. K., & Bedair, S. M. (2011). Staggered InGaAs/GaAsP strained layer superlattices for use in optical devices. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 208(12), 2884–2888. https://doi.org/10.1002/pssa.201026624