2014 journal article

Polarity characterization by anomalous x-ray dispersion of ZnO films and GaN lateral polar structures

JOURNAL OF APPLIED PHYSICS, 115(4).

By: C. Shelton n, E. Sachet n, E. Paisley n, M. Hoffmann n, J. Rajan n, R. Collazo n, Z. Sitar n, J. Maria n

topics (OpenAlex): ZnO doping and properties; GaN-based semiconductor devices and materials; Acoustic Wave Resonator Technologies
UN Sustainable Development Goals Color Wheel
UN Sustainable Development Goal Categories
10. Reduced Inequalities (OpenAlex)
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2012 journal article

Lateral epitaxial overgrowth of nitrogen polar GaN on smooth nitrogen polar GaN templates by metalorganic chemical vapor deposition

JOURNAL OF APPLIED PHYSICS, 112(11).

topics (OpenAlex): GaN-based semiconductor devices and materials; Ga2O3 and related materials; ZnO doping and properties
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

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