James Scott Tweedie

Materials Science & Engineering

Works (33)

2019 | journal article

Structural characteristics of m-plane AlN substrates and homoepitaxial films

JOURNAL OF CRYSTAL GROWTH, 507, 389–394.

By: M. Graziano, I. Bryan, Z. Bryan, R. Kirste, J. Tweedie, R. Collazo, Z. Sitar

Source: NC State University Libraries
Added: January 28, 2019

2019 | article

The polarization field in Al-rich AlGaN multiple quantum wells

JAPANESE JOURNAL OF APPLIED PHYSICS.

Source: Web Of Science
Added: July 29, 2019

2017 | journal article

Defect quasi Fermi level control-based C-N reduction in GaN: Evidence for the role of minority carriers

Applied Physics Letters, 111(15).

Source: NC State University Libraries
Added: August 6, 2018

2017 | journal article

High free carrier concentration in p-GaN grown on AlN substrates

Applied Physics Letters, 111(3).

By: B. Sarkar, S. Mita, P. Reddy, A. Klump, F. Kaess, J. Tweedie, I. Bryan, Z. Bryan ...

Source: NC State University Libraries
Added: August 6, 2018

2017 | conference paper

Material considerations for the development of III-nitride power devices

In Gallium nitride and silicon carbide power technologies 7 (Vol. 80, pp. 29–36).

By: B. Sarkar, P. Reddy, F. Kaess, B. Haidet, J. Tweedie, S. Mita, R. Kirste, E. Kohn, R. Collazo, Z. Sitar

Source: NC State University Libraries
Added: August 6, 2018

2016 | conference paper

Strain engineered high reflectivity DBRs in the deep UV

In Gallium nitride materials and devices xi (Vol. 9748).

By: A. Franke, P. Hoffmann, L. Hernandez-Balderrama, F. Kaess, I. Bryan, S. Washiyama, M. Bobea, J. Tweedie ...

Source: NC State University Libraries
Added: August 6, 2018

2015 | journal article

Growth and characterization of AlxGa1-xN lateral polarity structures

Physica Status Solidi. A, Applications and Materials Science, 212(5), 1039–1042.

By: M. Hoffmann, R. Kirste, S. Mita, W. Guo, J. Tweedie, M. Bobea, I. Bryan, Z. Bryan ...

Source: NC State University Libraries
Added: August 6, 2018

2014 | journal article

Fermi level control of compensating point defects during metalorganic chemical vapor deposition growth of Si-doped AlGaN

Applied Physics Letters, 105(22).

By: Z. Bryan, I. Bryan, B. Gaddy, P. Reddy, L. Hussey, M. Bobea, W. Guo, M. Hoffmann ...

Source: NC State University Libraries
Added: August 6, 2018

2014 | conference paper

Properties of AlN based lateral polarity structures

In Physica status solidi c: current topics in solid state physics, vol 11, no 2 (Vol. 11, pp. 261–264).

By: R. Kirste, S. Mita, M. Hoffmann, L. Hussey, W. Guo, I. Bryan, Z. Bryan, J. Tweedie ...

Source: NC State University Libraries
Added: August 6, 2018

2014 | journal article

Schottky contact formation on polar and non-polar AlN

Journal of Applied Physics, 116(19).

By: P. Reddy, I. Bryan, Z. Bryan, J. Tweedie, R. Kirste, R. Collazo, Z. Sitar

Source: NC State University Libraries
Added: August 6, 2018

2014 | conference paper

Surface preparation of non-polar single-crystalline AlN substrates

In Physica status solidi c: current topics in solid state physics, vol 11, no 3-4 (Vol. 11, pp. 454–457).

Source: NC State University Libraries
Added: August 6, 2018

2013 | journal article

Comparative study of etching high crystalline quality AlN and GaN

Journal of Crystal Growth, 366, 20–25.

By: W. Guo, J. Xie, C. Akouala, S. Mita, A. Rice, J. Tweedie, I. Bryan, R. Collazo, Z. Sitar

Source: NC State University Libraries
Added: August 6, 2018

2013 | journal article

Compensation effects in GaN: Mg probed by Raman spectroscopy and photoluminescence measurements

Journal of Applied Physics, 113(10).

By: R. Kirste, M. Hoffmann, J. Tweedie, Z. Bryan, G. Callsen, T. Kure, C. Nenstiel, M. Wagner ...

Source: NC State University Libraries
Added: August 6, 2018

2013 | journal article

Fermi level control of point defects during growth of Mg-doped GaN

Journal of Electronic Materials, 42(5), 815–819.

By: Z. Bryan, M. Hoffmann, J. Tweedie, R. Kirste, G. Callsen, I. Bryan, A. Rice, M. Bobea ...

Source: NC State University Libraries
Added: August 6, 2018

2013 | journal article

Polarity control and growth of lateral polarity structures in AlN

Applied Physics Letters, 102(18).

By: R. Kirste, S. Mita, L. Hussey, M. Hoffmann, W. Guo, I. Bryan, Z. Bryan, J. Tweedie ...

Source: NC State University Libraries
Added: August 6, 2018

2013 | journal article

X-ray characterization techniques for the assessment of surface damage in crystalline wafers: A model study in AlN

Journal of Applied Physics, 113(12).

By: M. Bobea, J. Tweedie, I. Bryan, Z. Bryan, A. Rice, R. Dalmau, J. Xie, R. Collazo, Z. Sitar

Source: NC State University Libraries
Added: August 6, 2018

2012 | journal article

Optical signature of Mg-doped GaN: Transfer processes

Physical Review. B, Condensed Matter and Materials Physics, 86(7).

By: G. Callsen, M. Wagner, T. Kure, J. Reparaz, M. Bugler, J. Brunnmeier, C. Nenstiel, A. Hoffmann ...

Source: NC State University Libraries
Added: August 6, 2018

2012 | conference paper

Schottky barrier and interface chemistry for Ni contacted to Al0.8Ga0.2N grown on c-oriented AlN single crystal substrates

In Physica status solidi c: current topics in solid state physics, vol 9, no 3-4 (Vol. 9, pp. 584–587).

By: J. Tweedie, R. Collazo, A. Rice, S. Mita, J. Xie, R. Akouala, Z. Sitar

Source: NC State University Libraries
Added: August 6, 2018

2011 | conference paper

265 nm light emitting diodes on AlN single crystal substrates: Growth and characterization

In 2011 Conference on Lasers and Electro-Optics (CLEO).

By: R. Collazo, S. Mita, J. Xie, A. Rice, J. Tweedie, R. Dalmau, B. Moody, R. Schlesser ...

Source: NC State University Libraries
Added: August 6, 2018

2011 | journal article

Growth and characterization of AlN and AlGaN epitaxial films on AlN single crystal substrates

Journal of the Electrochemical Society, 158(5), H530–535.

By: R. Dalmau, B. Moody, R. Schlesser, S. Mita, J. Xie, M. Feneberg, B. Neuschl, K. Thonke ...

Source: NC State University Libraries
Added: August 6, 2018

2011 | journal article

Observation of NH(2) species on tilted InN (01(1)over-bar1) facets

Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 29(4).

By: A. Acharya, M. Buegler, R. Atalay, N. Dietz, B. Thoms, J. Tweedie, R. Collazo

Source: NC State University Libraries
Added: August 6, 2018

2011 | journal article

On the strain in n-type GaN

Applied Physics Letters, 99(14).

By: J. Xie, S. Mita, L. Hussey, A. Rice, J. Tweedie, J. LeBeau, R. Collazo, Z. Sitar

Source: NC State University Libraries
Added: August 6, 2018

2011 | conference paper

Progress on n-type doping of AlGaN alloys on AlN single crystal substrates for UV optoelectronic applications

In Physica status solidi c: current topics in solid state physics, vol 8, no 7-8 (Vol. 8).

By: R. Collazo, S. Mita, J. Xie, A. Rice, J. Tweedie, R. Dalmau, Z. Sitar

Source: NC State University Libraries
Added: August 6, 2018

2011 | journal article

Strain in Si doped GaN and the Fermi level effect

Applied Physics Letters, 98(20).

By: J. Xie, S. Mita, A. Rice, J. Tweedie, L. Hussey, R. Collazo, Z. Sitar

Source: NC State University Libraries
Added: August 6, 2018

2011 | journal article

Surfactant-enabled epitaxy through control of growth mode with chemical boundary conditions

Nature Communications, 2.

Source: NC State University Libraries
Added: August 6, 2018

2011 | journal article

Temperature dependent photoluminescence of lateral polarity junctions of metal organic chemical vapor deposition grown GaN

Journal of Applied Physics, 110(9).

By: R. Kirste, R. Collazo, G. Callsen, M. Wagner, T. Kure, J. Reparaz, S. Mita, J. Xie ...

Source: NC State University Libraries
Added: August 6, 2018

2010 | conference paper

Implementation of the GaN lateral polarity junction in a MESFET utilizing polar doping selectivity

In Physica Status Solidi. A, Applications and Materials Science (Vol. 207, pp. 45–48).

By: R. Collazo, S. Mita, J. Xie, A. Rice, J. Tweedie, R. Dalmau, Z. Sitar

Source: NC State University Libraries
Added: August 6, 2018

2010 | conference paper

Linear dependency of Al-mole fraction with group-III precursor flows in AlxGa1-xN (0 <= x <= 1) deposition by LP OMVPE

In Journal of Crystal Growth (Vol. 312, pp. 1321–1324).

By: A. Rice, R. Collazo, J. Tweedie, J. Xie, S. Mita & Z. Sitar

Source: NC State University Libraries
Added: August 6, 2018

2010 | journal article

Surface preparation and homoepitaxial deposition of AlN on (0001)-oriented AlN substrates by metalorganic chemical vapor deposition

Journal of Applied Physics, 108(4).

By: A. Rice, R. Collazo, J. Tweedie, R. Dalmau, S. Mita, J. Xie, Z. Sitar

Source: NC State University Libraries
Added: August 6, 2018

2010 | journal article

X-ray characterization of composition and relaxation of AlxGa1-xN(0 <= x <= 1) layers grown on GaN/sapphire templates by low pressure organometallic vapor phase epitaxy

Journal of Applied Physics, 108(4).

By: J. Tweedie, R. Collazo, A. Rice, J. Xie, S. Mita, R. Dalmau, Z. Sitar

Source: NC State University Libraries
Added: August 6, 2018

2010 | journal article

The effect of N-polar GaN domains as Ohmic contacts

Applied Physics Letters, 97(12).

By: J. Xie, S. Mita, R. Collazo, A. Rice, J. Tweedie & Z. Sitar

Source: NC State University Libraries
Added: August 6, 2018

2008 | journal article

The influence of substrate polarity on the structural quality of InN layers grown by high-pressure chemical vapor deposition

Applied Physics Letters, 92(4).

By: N. Dietz, M. Alevli, R. Atalay, G. Durkaya, R. Collazo, J. Tweedie, S. Mita, Z. Sitar

Source: NC State University Libraries
Added: August 6, 2018

| conference paper

Point defect management in GaN by Fermi-level control during growth

Hoffmann, M. P., Tweedie, J., Kirste, R., Bryan, Z., Bryan, I., Gerhold, M., … Collazo, R. In Gallium nitride materials and devices ix (Vol. 8986).

By: M. Hoffmann, J. Tweedie, R. Kirste, Z. Bryan, I. Bryan, M. Gerhold, Z. Sitar, R. Collazo

Source: NC State University Libraries
Added: August 6, 2018