James Tweedie

Analysis of Vertical GaN JBS and p-n Diodes by Mg Ion Implantation and Ultrahigh-Pressure Annealing

Stein, S. R., Khachariya, D., Mecouch, W., Mita, S., Reddy, P., Tweedie, J., … Pavlidis, S. (2023, December 12). IEEE TRANSACTIONS ON ELECTRON DEVICES, Vol. 12.

Demonstration of near-ideal Schottky contacts to Si-doped AlN

APPLIED PHYSICS LETTERS, 123(17).

High conductivity in Ge-doped AlN achieved by a non-equilibrium process

APPLIED PHYSICS LETTERS, 122(14).

Schottky contacts on ultra-high-pressure-annealed GaN with high rectification ratio and near-unity ideality factor

APPLIED PHYSICS EXPRESS, 16(3).

Crystallographic Tilt in Aluminum Gallium Nitride Epilayers Grown on Miscut Aluminum Nitride Substrates

Rathkanthiwar, S., Graziano, M. B., Tweedie, J., Mita, S., Kirste, R., Collazo, R., & Sitar, Z. (2022, October 25). PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, Vol. 10.

High electron mobility in AlN:Si by point and extended defect management

JOURNAL OF APPLIED PHYSICS, 132(18).

Large-Area, Solar-Blind, Sub-250 nm Detection AlGaN Avalanche Photodiodes Grown on AlN Substrates

Reddy, P., Mecouch, W., Breckenridge, M. H., Khachariya, D., Bagheri, P., Kim, J. H., … Sitar, Z. (2022, March 10). PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, Vol. 3.

Point-defect management in homoepitaxially grown Si-doped GaN by MOCVD for vertical power devices

APPLIED PHYSICS EXPRESS, 15(5).

Pseudomorphic growth of thick Al0.6Ga0.4N epilayers on AlN substrates

APPLIED PHYSICS LETTERS, 120(20).

Vertical GaN junction barrier Schottky diodes with near-ideal performance using Mg implantation activated by ultra-high-pressure annealing

APPLIED PHYSICS EXPRESS, 15(10).

High Mg activation in implanted GaN by high temperature and ultrahigh pressure annealing

APPLIED PHYSICS LETTERS, 118(2).

High n-type conductivity and carrier concentration in Si-implanted homoepitaxial AlN

APPLIED PHYSICS LETTERS, 118(11).

Structural characteristics of m-plane AlN substrates and homoepitaxial films

JOURNAL OF CRYSTAL GROWTH, 507, 389–394.

The polarization field in Al-rich AlGaN multiple quantum wells

Guo, Q., Kirste, R., Mita, S., Tweedie, J., Reddy, P., Washiyama, S., … Sitar, Z. (2019, June 1). JAPANESE JOURNAL OF APPLIED PHYSICS, Vol. 58.

(Invited) Material Considerations for the Development of III-nitride Power Devices

GALLIUM NITRIDE AND SILICON CARBIDE POWER TECHNOLOGIES 7, Vol. 80, pp. 29–36.

Defect quasi Fermi level control-based C-N reduction in GaN: Evidence for the role of minority carriers

APPLIED PHYSICS LETTERS, 111(15).

High free carrier concentration in p-GaN grown on AlN substrates

APPLIED PHYSICS LETTERS, 111(3).

Strain engineered high reflectivity DBRs in the deep UV

GALLIUM NITRIDE MATERIALS AND DEVICES XI, Vol. 9748.

Growth and characterization of AlxGa1-xN lateral polarity structures

Hoffmann, M. P., Kirste, R., Mita, S., Guo, W., Tweedie, J., Bobea, M., … Sitar, Z. (2015, May). PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, Vol. 212, pp. 1039–1042.

Fermi level control of compensating point defects during metalorganic chemical vapor deposition growth of Si-doped AlGaN

APPLIED PHYSICS LETTERS, 105(22).

Properties of AlN based lateral polarity structures

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 2, Vol. 11, pp. 261–264.

Schottky contact formation on polar and non-polar AlN

JOURNAL OF APPLIED PHYSICS, 116(19).

Surface preparation of non-polar single-crystalline AlN substrates

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 3-4, Vol. 11, pp. 454–457.

Comparative study of etching high crystalline quality AlN and GaN

JOURNAL OF CRYSTAL GROWTH, 366, 20–25.

Compensation effects in GaN:Mg probed by Raman spectroscopy and photoluminescence measurements

Journal of Applied Physics, 113(10), 103504.

Fermi Level Control of Point Defects During Growth of Mg-Doped GaN

JOURNAL OF ELECTRONIC MATERIALS, 42(5), 815–819.

Polarity control and growth of lateral polarity structures in AlN

Applied Physics Letters, 102(18).

X-ray characterization techniques for the assessment of surface damage in crystalline wafers: A model study in AlN

JOURNAL OF APPLIED PHYSICS, 113(12).

Optical signature of Mg-doped GaN: Transfer processes

PHYSICAL REVIEW B, 86(7).

Schottky barrier and interface chemistry for Ni contacted to Al0.8Ga0.2N grown on c-oriented AlN single crystal substrates

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4, Vol. 9, pp. 584–587.

265 nm light emitting diodes on AlN single crystal substrates: Growth and characterization

2011 Conference on Lasers and Electro-Optics (CLEO).

Growth and Characterization of AlN and AlGaN Epitaxial Films on AlN Single Crystal Substrates

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 158(5), H530–H535.

Observation of NH2 species on tilted InN (01(1)over-bar1) facets

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 29(4).

On the strain in n-type GaN

APPLIED PHYSICS LETTERS, 99(14).

Progress on n-type doping of AlGaN alloys on AlN single crystal substrates for UV optoelectronic applications

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 7-8, Vol. 8.

Strain in Si doped GaN and the Fermi level effect

APPLIED PHYSICS LETTERS, 98(20).

Surfactant-enabled epitaxy through control of growth mode with chemical boundary conditions

NATURE COMMUNICATIONS, 2.

Temperature dependent photoluminescence of lateral polarity junctions of metal organic chemical vapor deposition grown GaN

Journal of Applied Physics, 110(9), 093503.

Implementation of the GaN lateral polarity junction in a MESFET utilizing polar doping selectivity

Collazo, R., Mita, S., Xie, J., Rice, A., Tweedie, J., Dalmau, R., & Sitar, Z. (2010, January). PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, Vol. 207, pp. 45–48.

Linear dependency of Al-mole fraction with group-III precursor flows in AlxGa1-xN (0 <= x <= 1) deposition by LP OMVPE

Rice, A., Collazo, R., Tweedie, J., Xie, J., Mita, S., & Sitar, Z. (2010, April 1). JOURNAL OF CRYSTAL GROWTH, Vol. 312, pp. 1321–1324.

Surface preparation and homoepitaxial deposition of AlN on (0001)-oriented AlN substrates by metalorganic chemical vapor deposition

Journal of Applied Physics, 108(4), 043510.

The effect of N-polar GaN domains as Ohmic contacts

APPLIED PHYSICS LETTERS, 97(12).

X-ray characterization of composition and relaxation of Al(x)Ga(1-x)N(0 <= x <= 1) layers grown on GaN/sapphire templates by low pressure organometallic vapor phase epitaxy

JOURNAL OF APPLIED PHYSICS, 108(4).

The influence of substrate polarity on the structural quality of InN layers grown by high-pressure chemical vapor deposition

APPLIED PHYSICS LETTERS, 92(4).

Point defect management in GaN by Fermi-level control during growth

Hoffmann, M. P., Tweedie, J., Kirste, R., Bryan, Z., Bryan, I., Gerhold, M., … Collazo, R. Gallium nitride materials and devices ix, 8986.