Works (41)

2022 article

Crystallographic Tilt in Aluminum Gallium Nitride Epilayers Grown on Miscut Aluminum Nitride Substrates

Rathkanthiwar, S., Graziano, M. B., Tweedie, J., Mita, S., Kirste, R., Collazo, R., & Sitar, Z. (2022, October 25). PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, Vol. 10.

By: S. Rathkanthiwar, M. Graziano n, J. Tweedie, S. Mita, R. Kirste, R. Collazo, Z. Sitar

Sources: Web Of Science, ORCID
Added: October 31, 2022

2022 journal article

High electron mobility in AlN:Si by point and extended defect management

JOURNAL OF APPLIED PHYSICS, 132(18).

Sources: Web Of Science, ORCID
Added: November 10, 2022

2022 article

Large-Area, Solar-Blind, Sub-250 nm Detection AlGaN Avalanche Photodiodes Grown on AlN Substrates

Reddy, P., Mecouch, W., Breckenridge, M. H., Khachariya, D., Bagheri, P., Kim, J. H., … Sitar, Z. (2022, March 10). PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, Vol. 3.

By: P. Reddy, W. Mecouch, M. Breckenridge n, D. Khachariya, P. Bagheri, J. Kim, Y. Guan, S. Mita ...

Sources: Web Of Science, ORCID
Added: March 11, 2022

2022 journal article

Point-defect management in homoepitaxially grown Si-doped GaN by MOCVD for vertical power devices

APPLIED PHYSICS EXPRESS, 15(5).

Sources: Web Of Science, ORCID
Added: April 25, 2022

2022 journal article

Pseudomorphic growth of thick Al0.6Ga0.4N epilayers on AlN substrates

APPLIED PHYSICS LETTERS, 120(20).

By: S. Rathkanthiwar, J. Dycus*, S. Mita, R. Kirste, J. Tweedie, R. Collazo, Z. Sitar

Sources: Web Of Science, ORCID
Added: May 31, 2022

2022 journal article

Vertical GaN junction barrier Schottky diodes with near-ideal performance using Mg implantation activated by ultra-high-pressure annealing

APPLIED PHYSICS EXPRESS, 15(10).

By: D. Khachariya, S. Stein, W. Mecouch, M. Breckenridge, S. Rathkanthiwar, S. Mita, B. Moody, P. Reddy ...

Sources: Web Of Science, ORCID
Added: October 3, 2022

2021 journal article

High Mg activation in implanted GaN by high temperature and ultrahigh pressure annealing

APPLIED PHYSICS LETTERS, 118(2), 022101.

By: M. Breckenridge n, J. Tweedie, P. Reddy, Y. Guan, P. Bagheri, D. Szymanski, S. Mita, K. Sierakowski* ...

Sources: Web Of Science, ORCID
Added: January 14, 2021

2021 journal article

High n-type conductivity and carrier concentration in Si-implanted homoepitaxial AlN

APPLIED PHYSICS LETTERS, 118(11).

By: M. Breckenridge n, P. Bagheri, Q. Guo, B. Sarkar, D. Khachariya, S. Pavlidis, J. Tweedie, R. Kirste ...

Sources: Web Of Science, ORCID
Added: March 17, 2021

2019 journal article

Structural characteristics of m-plane AlN substrates and homoepitaxial films

JOURNAL OF CRYSTAL GROWTH, 507, 389–394.

By: M. Graziano n, I. Bryan, Z. Bryan, R. Kirste, J. Tweedie, R. Collazo, Z. Sitar

Sources: NC State University Libraries, ORCID
Added: January 28, 2019

2019 article

The polarization field in Al-rich AlGaN multiple quantum wells

JAPANESE JOURNAL OF APPLIED PHYSICS, Vol. 58.

Sources: Web Of Science, ORCID
Added: July 29, 2019

2017 journal article

Defect quasi Fermi level control-based CN reduction in GaN: Evidence for the role of minority carriers

Applied Physics Letters, 111(15), 152101.

By: P. Reddy, F. Kaess, J. Tweedie, R. Kirste, S. Mita, R. Collazo, Z. Sitar

Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2017 journal article

High free carrier concentration in p-GaN grown on AlN substrates

Applied Physics Letters, 111(3), 032109.

By: B. Sarkar, S. Mita, P. Reddy, A. Klump, F. Kaess, J. Tweedie, I. Bryan, Z. Bryan ...

Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2017 conference paper

Material considerations for the development of III-nitride power devices

ECS Transactions, 80(7), 29–36.

By: B. Sarkar, P. Reddy, F. Kaess, B. Haidet n, J. Tweedie, S. Mita, R. Kirste, E. Kohn n ...

Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2016 conference paper

Strain engineered high reflectivity DBRs in the deep UV

Gallium nitride materials and devices xi, 9748.

By: A. Franke, P. Hoffmann n, L. Hernandez-Balderrama n, F. Kaess, I. Bryan, S. Washiyama, M. Bobea, J. Tweedie ...

Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2015 journal article

Growth and characterization of AlxGa1-xN lateral polarity structures

Physica Status Solidi. A, Applications and Materials Science, 212(5), 1039–1042.

By: M. Hoffmann, R. Kirste, S. Mita*, W. Guo, J. Tweedie, M. Bobea, I. Bryan, Z. Bryan ...

Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2014 journal article

Fermi level control of compensating point defects during metalorganic chemical vapor deposition growth of Si-doped AlGaN

Applied Physics Letters, 105(22), 222101.

By: Z. Bryan, I. Bryan, B. Gaddy, P. Reddy, L. Hussey, M. Bobea, W. Guo, M. Hoffmann ...

Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2014 conference paper

Properties of AlN based lateral polarity structures

Physica status solidi c: current topics in solid state physics, vol 11, no 2, 11(2), 261–264.

By: R. Kirste, S. Mita*, M. Hoffmann, L. Hussey, W. Guo, I. Bryan, Z. Bryan, J. Tweedie ...

Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2014 journal article

Schottky contact formation on polar and non-polar AlN

Journal of Applied Physics, 116(19), 194503.

By: P. Reddy, I. Bryan n, Z. Bryan, J. Tweedie, R. Kirste, R. Collazo, Z. Sitar

Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2014 conference paper

Surface preparation of non-polar single-crystalline AlN substrates

Physica status solidi c: current topics in solid state physics, vol 11, no 3-4, 11(3-4), 454–457.

Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2013 journal article

Comparative study of etching high crystalline quality AlN and GaN

Journal of Crystal Growth, 366, 20–25.

By: W. Guo, J. Xie*, C. Akouala, S. Mita*, A. Rice, J. Tweedie, I. Bryan, R. Collazo, Z. Sitar

Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2013 journal article

Compensation effects in GaN:Mg probed by Raman spectroscopy and photoluminescence measurements

Journal of Applied Physics, 113(10), 103504.

By: R. Kirste, M. Hoffmann, J. Tweedie, Z. Bryan, G. Callsen, T. Kure, C. Nenstiel, M. Wagner ...

Sources: NC State University Libraries, ORCID, Crossref
Added: August 6, 2018

2013 journal article

Fermi level control of point defects during growth of Mg-doped GaN

Journal of Electronic Materials, 42(5), 815–819.

By: Z. Bryan, M. Hoffmann, J. Tweedie, R. Kirste, G. Callsen*, I. Bryan, A. Rice, M. Bobea ...

Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2013 journal article

Polarity control and growth of lateral polarity structures in AlN

Applied Physics Letters, 102(18).

By: R. Kirste, S. Mita, L. Hussey, M. Hoffmann, W. Guo, I. Bryan, Z. Bryan, J. Tweedie ...

Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2013 journal article

X-ray characterization techniques for the assessment of surface damage in crystalline wafers: A model study in AlN

Journal of Applied Physics, 113(12).

By: M. Bobea, J. Tweedie, I. Bryan, Z. Bryan, A. Rice, R. Dalmau, J. Xie, R. Collazo, Z. Sitar

Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2012 journal article

Optical signature of Mg-doped GaN: Transfer processes

Physical Review. B, Condensed Matter and Materials Physics, 86(7).

By: G. Callsen*, M. Wagner*, T. Kure*, J. Reparaz*, M. Bugler*, J. Brunnmeier*, C. Nenstiel*, A. Hoffmann* ...

Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2012 conference paper

Schottky barrier and interface chemistry for Ni contacted to Al0.8Ga0.2N grown on c-oriented AlN single crystal substrates

Physica status solidi c: current topics in solid state physics, vol 9, no 3-4, 9(3-4), 584–587.

By: J. Tweedie, R. Collazo, A. Rice, S. Mita*, J. Xie*, R. Akouala n, Z. Sitar

Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2011 conference paper

265 nm light emitting diodes on AlN single crystal substrates: Growth and characterization

2011 Conference on Lasers and Electro-Optics (CLEO).

By: R. Collazo, S. Mita*, J. Xie*, A. Rice, J. Tweedie, R. Dalmau*, B. Moody*, R. Schlesser* ...

Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2011 journal article

Growth and characterization of AlN and AlGaN epitaxial films on AlN single crystal substrates

Journal of the Electrochemical Society, 158(5), H530–535.

By: R. Dalmau*, B. Moody*, R. Schlesser*, S. Mita*, J. Xie*, M. Feneberg*, B. Neuschl*, K. Thonke* ...

Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2011 journal article

Observation of NH(2) species on tilted InN (01(1)over-bar1) facets

Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 29(4).

By: A. Acharya, M. Buegler, R. Atalay, N. Dietz, B. Thoms, J. Tweedie, R. Collazo

Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2011 journal article

On the strain in n-type GaN

Applied Physics Letters, 99(14).

By: J. Xie, S. Mita, L. Hussey, A. Rice, J. Tweedie, J. LeBeau, R. Collazo, Z. Sitar

Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2011 conference paper

Progress on n-type doping of AlGaN alloys on AlN single crystal substrates for UV optoelectronic applications

Physica status solidi c: current topics in solid state physics, vol 8, no 7-8, 8(7-8).

Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2011 journal article

Strain in Si doped GaN and the Fermi level effect

Applied Physics Letters, 98(20).

By: J. Xie, S. Mita, A. Rice, J. Tweedie, L. Hussey, R. Collazo, Z. Sitar

Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2011 journal article

Surfactant-enabled epitaxy through control of growth mode with chemical boundary conditions

Nature Communications, 2.

Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2011 journal article

Temperature dependent photoluminescence of lateral polarity junctions of metal organic chemical vapor deposition grown GaN

Journal of Applied Physics, 110(9), 093503.

By: R. Kirste, R. Collazo, G. Callsen, M. Wagner, T. Kure, J. Sebastian Reparaz, S. Mita, J. Xie ...

Sources: NC State University Libraries, ORCID, Crossref
Added: August 6, 2018

2010 conference paper

Implementation of the GaN lateral polarity junction in a MESFET utilizing polar doping selectivity

Physica Status Solidi. A, Applications and Materials Science, 207(1), 45–48.

By: R. Collazo, S. Mita*, J. Xie*, A. Rice, J. Tweedie, R. Dalmau*, Z. Sitar

Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2010 conference paper

Linear dependency of Al-mole fraction with group-III precursor flows in AlxGa1-xN (0 <= x <= 1) deposition by LP OMVPE

Journal of Crystal Growth, 312(8), 1321–1324.

By: A. Rice, R. Collazo, J. Tweedie, J. Xie*, S. Mita & Z. Sitar

Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2010 journal article

Surface preparation and homoepitaxial deposition of AlN on (0001)-oriented AlN substrates by metalorganic chemical vapor deposition

Journal of Applied Physics, 108(4), 043510.

By: A. Rice, R. Collazo, J. Tweedie, R. Dalmau, S. Mita, J. Xie, Z. Sitar

Sources: NC State University Libraries, Crossref, ORCID
Added: August 6, 2018

2010 journal article

The effect of N-polar GaN domains as Ohmic contacts

Applied Physics Letters, 97(12).

By: J. Xie, S. Mita, R. Collazo, A. Rice, J. Tweedie & Z. Sitar

Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2010 journal article

X-ray characterization of composition and relaxation of AlxGa1-xN(0 <= x <= 1) layers grown on GaN/sapphire templates by low pressure organometallic vapor phase epitaxy

Journal of Applied Physics, 108(4).

By: J. Tweedie, R. Collazo, A. Rice, J. Xie, S. Mita, R. Dalmau, Z. Sitar

Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2008 journal article

The influence of substrate polarity on the structural quality of InN layers grown by high-pressure chemical vapor deposition

Applied Physics Letters, 92(4).

By: N. Dietz, M. Alevli, R. Atalay, G. Durkaya, R. Collazo, J. Tweedie, S. Mita, Z. Sitar

Sources: NC State University Libraries, ORCID
Added: August 6, 2018

conference paper

Point defect management in GaN by Fermi-level control during growth

Hoffmann, M. P., Tweedie, J., Kirste, R., Bryan, Z., Bryan, I., Gerhold, M., … Collazo, R. Gallium nitride materials and devices ix, 8986.

By: M. Hoffmann, J. Tweedie, R. Kirste, Z. Bryan, I. Bryan, M. Gerhold, Z. Sitar, R. Collazo

Source: NC State University Libraries
Added: August 6, 2018