2012 conference paper
Schottky barrier and interface chemistry for Ni contacted to Al0.8Ga0.2N grown on c-oriented AlN single crystal substrates
Physica status solidi c: current topics in solid state physics, vol 9, no 3-4, 9(3-4), 584–587.
2011 conference paper
Progress on n-type doping of AlGaN alloys on AlN single crystal substrates for UV optoelectronic applications
Physica status solidi c: current topics in solid state physics, vol 8, no 7-8, 8(7-8).
2010 journal article
X-ray characterization of composition and relaxation of AlxGa1-xN(0 <= x <= 1) layers grown on GaN/sapphire templates by low pressure organometallic vapor phase epitaxy
Journal of Applied Physics, 108(4).
Point defect management in GaN by Fermi-level control during growth
Hoffmann, M. P., Tweedie, J., Kirste, R., Bryan, Z., Bryan, I., Gerhold, M., … Collazo, R. Gallium nitride materials and devices ix, 8986.