James Tweedie

Analysis of Vertical GaN JBS and p-n Diodes by Mg Ion Implantation and Ultrahigh-Pressure Annealing

Stein, S. R., Khachariya, D., Mecouch, W., Mita, S., Reddy, P., Tweedie, J., … Pavlidis, S. (2023, December 12). IEEE Transactions on Electron Devices, Vol. 12, pp. 1494–1501.

Demonstration of near-ideal Schottky contacts to Si-doped AlN

Quiñones, C. E., Khachariya, D., Bagheri, P., Reddy, P., Mita, S., Kirste, R., … Sitar, Z. (2023, October 23). Applied Physics Letters, Vol. 123.

High conductivity in Ge-doped AlN achieved by a non-equilibrium process

Bagheri, P., Quiñones-Garcia, C., Khachariya, D., Loveless, J., Guan, Y., Rathkanthiwar, S., … Sitar, Z. (2023, April 3). Applied Physics Letters, Vol. 122.

Schottky contacts on ultra-high-pressure-annealed GaN with high rectification ratio and near-unity ideality factor

Stein, S. R., Khachariya, D., Mita, S., Breckenridge, M. H., Tweedie, J., Reddy, P., … Pavlidis, S. (2023, March 1). Applied Physics Express, Vol. 16.

Crystallographic Tilt in Aluminum Gallium Nitride Epilayers Grown on Miscut Aluminum Nitride Substrates

Rathkanthiwar, S., Graziano, M. B., Tweedie, J., Mita, S., Kirste, R., Collazo, R., & Sitar, Z. (2022, October 14). Physica Status Solidi (RRL) - Rapid Research Letters, Vol. 10.

High electron mobility in AlN:Si by point and extended defect management

Bagheri, P., Quiñones-Garcia, C., Khachariya, D., Rathkanthiwar, S., Reddy, P., Kirste, R., … Sitar, Z. (2022, November 9). Journal of Applied Physics, Vol. 11.

Large‐Area, Solar‐Blind, Sub‐250 nm Detection AlGaN Avalanche Photodiodes Grown on AlN Substrates

Reddy, P., Mecouch, W., Breckenridge, M. H., Khachariya, D., Bagheri, P., Kim, J. H., … Sitar, Z. (2022, February 19). Physica Status Solidi (RRL) - Rapid Research Letters, Vol. 3, p. 2100619.

Point-defect management in homoepitaxially grown Si-doped GaN by MOCVD for vertical power devices

Rathkanthiwar, S., Bagheri, P., Khachariya, D., Mita, S., Pavlidis, S., Reddy, P., … Collazo, R. (2022, April 7). Applied Physics Express, Vol. 5.

Pseudomorphic growth of thick Al0.6Ga0.4N epilayers on AlN substrates

Rathkanthiwar, S., Dycus, J. H., Mita, S., Kirste, R., Tweedie, J., Collazo, R., & Sitar, Z. (2022, May 16). Applied Physics Letters, Vol. 5.

Vertical GaN junction barrier Schottky diodes with near-ideal performance using Mg implantation activated by ultra-high-pressure annealing

Khachariya, D., Stein, S., Mecouch, W., Breckenridge, M. H., Rathkanthiwar, S., Mita, S., … Sitar, Z. (2022, September 5). Applied Physics Express, Vol. 10.

High n-type conductivity and carrier concentration in Si-implanted homoepitaxial AlN

Breckenridge, M. H., Bagheri, P., Guo, Q., Sarkar, B., Khachariya, D., Pavlidis, S., … Sitar, Z. (2021, March 15). Applied Physics Letters, Vol. 118.

High Mg activation in implanted GaN by high temperature and ultrahigh pressure annealing

Breckenridge, M. H., Tweedie, J., Reddy, P., Guan, Y., Bagheri, P., Szymanski, D., … Sitar, Z. (2021, January 11). Applied Physics Letters, Vol. 118, p. 022101.

The polarization field in Al-rich AlGaN multiple quantum wells

Guo, Q., Kirste, R., Mita, S., Tweedie, J., Reddy, P., Washiyama, S., … Sitar, Z. (2019, May 9). Japanese Journal of Applied Physics, Vol. 58.

Structural characteristics of m-plane AlN substrates and homoepitaxial films

Graziano, M. B., Bryan, I., Bryan, Z., Kirste, R., Tweedie, J., Collazo, R., & Sitar, Z. (2018, December 14). Journal of Crystal Growth, Vol. 507, pp. 389–394.

(Invited) Material Considerations for the Development of III-Nitride Power Devices

Sarkar, B., Reddy, P., Kaess, F., Haidet, B. B., Tweedie, J., Mita, S., … al. (2017, August 17). ECS Transactions, Vol. 80, pp. 29–36.

Defect quasi Fermi level control-based CN reduction in GaN: Evidence for the role of minority carriers

Reddy, P., Kaess, F., Tweedie, J., Kirste, R., Mita, S., Collazo, R., & Sitar, Z. (2017, October 9). Applied Physics Letters, Vol. 111, p. 152101.

High free carrier concentration in p-GaN grown on AlN substrates

Sarkar, B., Mita, S., Reddy, P., Klump, A., Kaess, F., Tweedie, J., … Sitar, Z. (2017, July 17). Applied Physics Letters, Vol. 111, p. 032109.

Strain engineered high reflectivity DBRs in the deep UV

Franke, A., Hoffmann, M. P., Hernandez-Balderrama, L., Kaess, F., Bryan, I., Washiyama, S., … Sitar, Z. (2016, February 26). Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE, Vol. 9748.

Fermi level control of compensating point defects during metalorganic chemical vapor deposition growth of Si-doped AlGaN

Bryan, Z., Bryan, I., Gaddy, B. E., Reddy, P., Hussey, L., Bobea, M., … Collazo, R. (2014, December 1). Applied Physics Letters, Vol. 105, p. 222101.

Growth and characterization of Al_xGa_1−xN lateral polarity structures

Hoffmann, M. P., Kirste, R., Mita, S., Guo, W., Tweedie, J., Bobea, M., … Sitar, Z. (2014, November 18). Physica Status Solidi (a), Vol. 212, pp. 1039–1042.

Properties of AlN based lateral polarity structures

Kirste, R., Mita, S., Hoffmann, M. P., Hussey, L., Guo, W., Bryan, I., … Sitar, Z. (2014, January 20). Physica Status Solidi. C, Conferences and Critical Reviews/Physica Status Solidi. C, Current Topics in Solid State Physics, Vol. 11, pp. 261–264.

Schottky contact formation on polar and non-polar AlN

Reddy, P., Bryan, I., Bryan, Z., Tweedie, J., Kirste, R., Collazo, R., & Sitar, Z. (2014, November 18). Journal of Applied Physics, Vol. 116, p. 194503.

Surface preparation of non‐polar single‐crystalline AlN substrates

Bryan, I., Akouala, C. R., Tweedie, J., Bryan, Z., Rice, A., Kirste, R., … Sitar, Z. (2014, January 22). Physica Status Solidi. C, Conferences and Critical Reviews/Physica Status Solidi. C, Current Topics in Solid State Physics, Vol. 11, pp. 454–457.

Comparative study of etching high crystalline quality AlN and GaN

Guo, W., Xie, J., Akouala, C., Mita, S., Rice, A., Tweedie, J., … Sitar, Z. (2013, January 4). Journal of Crystal Growth, Vol. 366, pp. 20–25.

Compensation effects in GaN:Mg probed by Raman spectroscopy and photoluminescence measurements

Journal of Applied Physics, 113(10), 103504.

Polarity control and growth of lateral polarity structures in AlN

Kirste, R., Mita, S., Hussey, L., Hoffmann, M. P., Guo, W., Bryan, I., … Sitar, Z. (2013, May 6). Applied Physics Letters, Vol. 102.

X-ray characterization techniques for the assessment of surface damage in crystalline wafers: A model study in AlN

Bobea, M., Tweedie, J., Bryan, I., Bryan, Z., Rice, A., Dalmau, R., … Sitar, Z. (2013, March 28). Journal of Applied Physics, Vol. 113.

Fermi Level Control of Point Defects During Growth of Mg-Doped GaN

Bryan, Z., Hoffmann, M., Tweedie, J., Kirste, R., Callsen, G., Bryan, I., … Collazo, R. (2012, December 4). Journal of Electronic Materials, Vol. 42, pp. 815–819.

Optical signature of Mg-doped GaN: Transfer processes

Callsen, G., Wagner, M. R., Kure, T., Reparaz, J. S., Bügler, M., Brunnmeier, J., … Sitar, Z. (2012, August 23). Physical Review B, Vol. 86.

Schottky barrier and interface chemistry for Ni contacted to Al_0.8Ga_0.2N grown on c‐oriented AlN single crystal substrates

Tweedie, J., Collazo, R., Rice, A., Mita, S., Xie, J., Akouala, R. C., & Sitar, Z. (2012, January 26). Physica Status Solidi. C, Conferences and Critical Reviews/Physica Status Solidi. C, Current Topics in Solid State Physics, Vol. 9, pp. 584–587.

265 nm Light Emitting Diodes on AlN Single Crystal Substrates: Growth and Characterization

Collazo, R., Mita, S., Xie, J., Rice, A., Tweedie, J., Dalmau, R., … Sitar, Z. (2011, January 1). 2011 Conference on Lasers and Electro-Optics (CLEO).

Growth and Characterization of AlN and AlGaN Epitaxial Films on AlN Single Crystal Substrates

Dalmau, R., Moody, B., Schlesser, R., Mita, S., Xie, J., Feneberg, M., … Sitar, Z. (2011, January 1). Journal of The Electrochemical Society, Vol. 158, pp. H530–535.

Observation of NH2 species on tilted InN (011−1) facets

Acharya, A. R., Buegler, M., Atalay, R., Dietz, N., Thoms, B. D., Tweedie, J. S., & Collazo, R. (2011, June 15). Journal of Vacuum Science & Technology A Vacuum Surfaces and Films, Vol. 29.

On the strain in n-type GaN

Xie, J., Mita, S., Hussey, L., Rice, A., Tweedie, J., LeBeau, J., … Sitar, Z. (2011, October 3). Applied Physics Letters, Vol. 99.

Progress on n‐type doping of AlGaN alloys on AlN single crystal substrates for UV optoelectronic applications

Collazo, R., Mita, S., Xie, J., Rice, A., Tweedie, J., Dalmau, R., & Sitar, Z. (2011, May 9). Physica Status Solidi. C, Conferences and Critical Reviews/Physica Status Solidi. C, Current Topics in Solid State Physics, Vol. 8.

Strain in Si doped GaN and the Fermi level effect

Xie, J., Mita, S., Rice, A., Tweedie, J., Hussey, L., Collazo, R., & Sitar, Z. (2011, May 16). Applied Physics Letters, Vol. 98.

Surfactant-enabled epitaxy through control of growth mode with chemical boundary conditions

Paisley, E. A., Losego, M. D., Gaddy, B. E., Tweedie, J. S., Collazo, R., Sitar, Z., … Maria, J.-P. (2011, September 6). Nature Communications, Vol. 2.

Temperature dependent photoluminescence of lateral polarity junctions of metal organic chemical vapor deposition grown GaN

Journal of Applied Physics, 110(9), 093503.

Surface preparation and homoepitaxial deposition of AlN on (0001)-oriented AlN substrates by metalorganic chemical vapor deposition

Journal of Applied Physics, 108(4), 043510.

The effect of N-polar GaN domains as Ohmic contacts

Xie, J., Mita, S., Collazo, R., Rice, A., Tweedie, J., & Sitar, Z. (2010, September 20). Applied Physics Letters, Vol. 97.

X-ray characterization of composition and relaxation of AlxGa1−xN(≤x≤1) layers grown on GaN/sapphire templates by low pressure organometallic vapor phase epitaxy

Tweedie, J., Collazo, R., Rice, A., Xie, J., Mita, S., Dalmau, R., & Sitar, Z. (2010, August 15). Journal of Applied Physics, Vol. 108.

Implementation of the GaN lateral polarity junction in a MESFET utilizing polar doping selectivity

Collazo, R., Mita, S., Xie, J., Rice, A., Tweedie, J., Dalmau, R., & Sitar, Z. (2009, December 8). Physica Status Solidi (a), Vol. 207, pp. 45–48.

Linear dependency of Al-mole fraction with group-III precursor flows in AlxGa1−xN (0≤x≤1) deposition by LP OMVPE

Rice, A., Collazo, R., Tweedie, J., Xie, J., Mita, S., & Sitar, Z. (2009, September 18). Journal of Crystal Growth, Vol. 312, pp. 1321–1324.

The influence of substrate polarity on the structural quality of InN layers grown by high-pressure chemical vapor deposition

Dietz, N., Alevli, M., Atalay, R., Durkaya, G., Collazo, R., Tweedie, J., … Sitar, Z. (2008, January 28). Applied Physics Letters, Vol. 92.

Point defect management in GaN by Fermi-level control during growth

Hoffmann, M. P., Tweedie, J., Kirste, R., Bryan, Z., Bryan, I., Gerhold, M., … Collazo, R. Gallium nitride materials and devices ix, 8986.