Works (45)

Updated: January 8th, 2024 11:25

2023 article

Analysis of Vertical GaN JBS and p-n Diodes by Mg Ion Implantation and Ultrahigh-Pressure Annealing

Stein, S. R., Khachariya, D., Mecouch, W., Mita, S., Reddy, P., Tweedie, J., … Pavlidis, S. (2023, December 12). IEEE TRANSACTIONS ON ELECTRON DEVICES, Vol. 12.

By: S. Stein n, D. Khachariya*, W. Mecouch*, S. Mita*, P. Reddy*, J. Tweedie n, K. Sierakowski*, G. Kamler* ...

author keywords: Schottky diodes; Annealing; Ion implantation; Schottky barriers; P-n junctions; Resistance; Gallium nitride; junction barrier Schottky (JBS) diode; Mg activation; p-n diode; power semiconductor device; Schottky contact; ultrahigh-pressure annealing (UHPA); vertical GaN
Sources: Web Of Science, ORCID
Added: January 2, 2024

2023 journal article

Demonstration of near-ideal Schottky contacts to Si-doped AlN

APPLIED PHYSICS LETTERS, 123(17).

By: C. Quinones n, D. Khachariya*, P. Bagheri n, P. Reddy*, S. Mita*, R. Kirste*, S. Rathkanthiwar n, J. Tweedie* ...

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Sources: Web Of Science, ORCID
Added: October 25, 2023

2023 journal article

High conductivity in Ge-doped AlN achieved by a non-equilibrium process

APPLIED PHYSICS LETTERS, 122(14).

By: P. Bagheri n, C. Quinones-Garcia n, D. Khachariya*, J. Loveless n, Y. Guan n, S. Rathkanthiwar n, P. Reddy*, R. Kirste* ...

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Sources: Web Of Science, ORCID
Added: April 6, 2023

2023 journal article

Schottky contacts on ultra-high-pressure-annealed GaN with high rectification ratio and near-unity ideality factor

APPLIED PHYSICS EXPRESS, 16(3).

By: S. Stein n, D. Khachariya*, S. Mita*, M. Breckenridge n, J. Tweedie*, P. Reddy*, K. Sierakowski*, G. Kamler* ...

author keywords: GaN; JBS diode; Schottky contact; ultra-high-pressure-annealing; ideality factor; ion implantation; barrier height
Sources: Web Of Science, ORCID
Added: April 17, 2023

2022 article

Crystallographic Tilt in Aluminum Gallium Nitride Epilayers Grown on Miscut Aluminum Nitride Substrates

Rathkanthiwar, S., Graziano, M. B., Tweedie, J., Mita, S., Kirste, R., Collazo, R., & Sitar, Z. (2022, October 25). PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, Vol. 10.

By: S. Rathkanthiwar n, M. Graziano n, J. Tweedie*, S. Mita*, R. Kirste*, R. Collazo n, Z. Sitar n

author keywords: AlGaN; AlN substrates; strain relaxation; tilt
Sources: Web Of Science, ORCID
Added: October 31, 2022

2022 journal article

High electron mobility in AlN:Si by point and extended defect management

JOURNAL OF APPLIED PHYSICS, 132(18).

Sources: Web Of Science, ORCID
Added: November 10, 2022

2022 article

Large-Area, Solar-Blind, Sub-250 nm Detection AlGaN Avalanche Photodiodes Grown on AlN Substrates

Reddy, P., Mecouch, W., Breckenridge, M. H., Khachariya, D., Bagheri, P., Kim, J. H., … Sitar, Z. (2022, March 10). PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, Vol. 3.

By: P. Reddy*, W. Mecouch*, M. Breckenridge n, D. Khachariya n, P. Bagheri n, J. Kim n, Y. Guan n, S. Mita* ...

author keywords: AlGaN; APD; UVC
Sources: Web Of Science, ORCID
Added: March 11, 2022

2022 journal article

Point-defect management in homoepitaxially grown Si-doped GaN by MOCVD for vertical power devices

APPLIED PHYSICS EXPRESS, 15(5).

Sources: Web Of Science, ORCID
Added: April 25, 2022

2022 journal article

Pseudomorphic growth of thick Al0.6Ga0.4N epilayers on AlN substrates

APPLIED PHYSICS LETTERS, 120(20).

By: S. Rathkanthiwar n, J. Dycus*, S. Mita*, R. Kirste*, J. Tweedie*, R. Collazo n, Z. Sitar n

Sources: Web Of Science, ORCID
Added: May 31, 2022

2022 journal article

Vertical GaN junction barrier Schottky diodes with near-ideal performance using Mg implantation activated by ultra-high-pressure annealing

APPLIED PHYSICS EXPRESS, 15(10).

By: D. Khachariya*, S. Stein n, W. Mecouch*, M. Breckenridge n, S. Rathkanthiwar n, S. Mita*, B. Moody*, P. Reddy* ...

author keywords: GaN; junction barrier Schottky diode; low ON-resistance; high breakdown voltage; Mg ion implantation; ultra-high-pressure anneal
Sources: Web Of Science, ORCID
Added: October 3, 2022

2021 journal article

High Mg activation in implanted GaN by high temperature and ultrahigh pressure annealing

APPLIED PHYSICS LETTERS, 118(2).

By: M. Breckenridge n, J. Tweedie*, P. Reddy*, Y. Guan n, P. Bagheri n, D. Szymanski n, S. Mita*, K. Sierakowski* ...

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Sources: Web Of Science, ORCID
Added: January 14, 2021

2021 journal article

High n-type conductivity and carrier concentration in Si-implanted homoepitaxial AlN

APPLIED PHYSICS LETTERS, 118(11).

By: M. Breckenridge n, P. Bagheri n, Q. Guo n, B. Sarkar n, D. Khachariya n, S. Pavlidis n, J. Tweedie*, R. Kirste* ...

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Sources: Web Of Science, ORCID
Added: March 17, 2021

2019 journal article

Structural characteristics of m-plane AlN substrates and homoepitaxial films

JOURNAL OF CRYSTAL GROWTH, 507, 389–394.

By: M. Graziano n, I. Bryan n, Z. Bryan n, R. Kirste n, J. Tweedie n, R. Collazo n, Z. Sitar n

author keywords: Characterization; High resolution x-ray diffraction; Surface structure; Crystal structure; Metalorganic chemical vapor deposition; Nitrides
Sources: Web Of Science, ORCID
Added: January 28, 2019

2019 article

The polarization field in Al-rich AlGaN multiple quantum wells

Guo, Q., Kirste, R., Mita, S., Tweedie, J., Reddy, P., Washiyama, S., … Sitar, Z. (2019, June 1). JAPANESE JOURNAL OF APPLIED PHYSICS, Vol. 58.

By: Q. Guo n, R. Kirste n, S. Mita n, J. Tweedie n, P. Reddy n, S. Washiyama n, M. Breckenridge n, R. Collazo n, Z. Sitar n

Sources: Web Of Science, ORCID
Added: July 29, 2019

2017 article

(Invited) Material Considerations for the Development of III-nitride Power Devices

GALLIUM NITRIDE AND SILICON CARBIDE POWER TECHNOLOGIES 7, Vol. 80, pp. 29–36.

By: B. Sarkar n, P. Reddy n, F. Kaess n, B. Haidet n, J. Tweedie*, S. Mita*, R. Kirste*, E. Kohn n ...

Contributors: B. Sarkar n, P. Reddy n, F. Kaess n, B. Haidet n, J. Tweedie*, S. Mita*, R. Kirste*, E. Kohn n, R. Collazo n, Z. Sitar n

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Sources: Web Of Science, ORCID
Added: August 6, 2018

2017 journal article

Defect quasi Fermi level control-based C-N reduction in GaN: Evidence for the role of minority carriers

APPLIED PHYSICS LETTERS, 111(15).

By: P. Reddy n, F. Kaess n, J. Tweedie*, R. Kirste*, S. Mita*, R. Collazo n, Z. Sitar n

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Sources: Web Of Science, ORCID
Added: August 6, 2018

2017 journal article

High free carrier concentration in p-GaN grown on AlN substrates

APPLIED PHYSICS LETTERS, 111(3).

By: B. Sarkar n, S. Mita n, P. Reddy n, A. Klump n, F. Kaess n, J. Tweedie n, I. Bryan n, Z. Bryan n ...

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Sources: Web Of Science, ORCID
Added: August 6, 2018

2016 article

Strain engineered high reflectivity DBRs in the deep UV

GALLIUM NITRIDE MATERIALS AND DEVICES XI, Vol. 9748.

By: A. Franke n, P. Hoffmann n, L. Hernandez-Balderrama n, F. Kaess n, I. Bryan n, S. Washiyama n, M. Bobea n, J. Tweedie n ...

author keywords: Distributed Bragg Reflector (DBR); strain relaxation; MOCVD; AlGaN; Nitride
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Sources: Web Of Science, ORCID
Added: August 6, 2018

2015 article

Growth and characterization of AlxGa1-xN lateral polarity structures

Hoffmann, M. P., Kirste, R., Mita, S., Guo, W., Tweedie, J., Bobea, M., … Sitar, Z. (2015, May). PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, Vol. 212, pp. 1039–1042.

By: M. Hoffmann n, R. Kirste n, S. Mita*, W. Guo n, J. Tweedie n, M. Bobea n, I. Bryan n, Z. Bryan n ...

author keywords: AlGaN; growth; lateral polarity structures; optical phase matching
Sources: Web Of Science, ORCID
Added: August 6, 2018

2014 journal article

Fermi level control of compensating point defects during metalorganic chemical vapor deposition growth of Si-doped AlGaN

APPLIED PHYSICS LETTERS, 105(22).

By: Z. Bryan n, I. Bryan n, B. Gaddy n, P. Reddy n, L. Hussey n, M. Bobea n, W. Guo n, M. Hoffmann n ...

Sources: Web Of Science, ORCID
Added: August 6, 2018

2014 article

Properties of AlN based lateral polarity structures

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 2, Vol. 11, pp. 261–264.

By: R. Kirste n, S. Mita*, M. Hoffmann n, L. Hussey n, W. Guo n, I. Bryan n, Z. Bryan n, J. Tweedie n ...

author keywords: lateral polarity structures; quasi-phase matching; N-polar; columnar growth
Sources: Web Of Science, ORCID
Added: August 6, 2018

2014 journal article

Schottky contact formation on polar and non-polar AlN

JOURNAL OF APPLIED PHYSICS, 116(19).

By: P. Reddy n, I. Bryan n, Z. Bryan n, J. Tweedie n, R. Kirste n, R. Collazo n, Z. Sitar n

Sources: Web Of Science, ORCID
Added: August 6, 2018

2014 article

Surface preparation of non-polar single-crystalline AlN substrates

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 3-4, Vol. 11, pp. 454–457.

By: I. Bryan n, C. Akouala n, J. Tweedie n, Z. Bryan n, A. Rice n, R. Kirste n, R. Collazo n, Z. Sitar n

author keywords: aluminum nitride; aluminum hydroxides; X-ray photoelectron spectroscopy; surface preparation
UN Sustainable Development Goal Categories
6. Clean Water and Sanitation (OpenAlex)
Sources: Web Of Science, ORCID
Added: August 6, 2018

2013 journal article

Comparative study of etching high crystalline quality AlN and GaN

JOURNAL OF CRYSTAL GROWTH, 366, 20–25.

By: W. Guo n, J. Xie*, C. Akouala n, S. Mita*, A. Rice n, J. Tweedie n, I. Bryan n, R. Collazo n, Z. Sitar n

author keywords: Etching; Surfaces; Nitrides; Semiconducting III-V materials; Light emitting diodes
Sources: Web Of Science, ORCID
Added: August 6, 2018

2013 journal article

Compensation effects in GaN:Mg probed by Raman spectroscopy and photoluminescence measurements

Journal of Applied Physics, 113(10), 103504.

By: R. Kirste n, M. Hoffmann n, J. Tweedie n, Z. Bryan n, G. Callsen*, T. Kure*, C. Nenstiel*, M. Wagner* ...

Sources: Web Of Science, ORCID, Crossref
Added: August 6, 2018

2013 journal article

Fermi Level Control of Point Defects During Growth of Mg-Doped GaN

JOURNAL OF ELECTRONIC MATERIALS, 42(5), 815–819.

By: Z. Bryan n, M. Hoffmann n, J. Tweedie n, R. Kirste n, G. Callsen*, I. Bryan n, A. Rice n, M. Bobea n ...

author keywords: Mg; GaN; UV excitation; Photoluminescence; Metal-organic chemical vapordeposition (MOCVD)
Sources: Web Of Science, ORCID
Added: August 6, 2018

2013 journal article

Polarity control and growth of lateral polarity structures in AlN

Applied Physics Letters, 102(18).

By: R. Kirste n, S. Mita, L. Hussey n, M. Hoffmann n, W. Guo n, I. Bryan n, Z. Bryan n, J. Tweedie n ...

Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2013 journal article

X-ray characterization techniques for the assessment of surface damage in crystalline wafers: A model study in AlN

JOURNAL OF APPLIED PHYSICS, 113(12).

By: M. Bobea n, J. Tweedie n, I. Bryan n, Z. Bryan n, A. Rice n, R. Dalmau*, J. Xie*, R. Collazo n, Z. Sitar n

Sources: Web Of Science, ORCID
Added: August 6, 2018

2012 journal article

Optical signature of Mg-doped GaN: Transfer processes

PHYSICAL REVIEW B, 86(7).

By: G. Callsen*, M. Wagner*, T. Kure*, J. Reparaz*, M. Buegler, J. Brunnmeier*, C. Nenstiel*, A. Hoffmann* ...

Sources: Web Of Science, ORCID
Added: August 6, 2018

2012 article

Schottky barrier and interface chemistry for Ni contacted to Al0.8Ga0.2N grown on c-oriented AlN single crystal substrates

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4, Vol. 9, pp. 584–587.

By: J. Tweedie n, R. Collazo n, A. Rice n, S. Mita, J. Xie, R. Akouala n, Z. Sitar n

author keywords: Schottky barrier; AlN; AlGaN; XPS
Sources: Web Of Science, ORCID
Added: August 6, 2018

2011 conference paper

265 nm light emitting diodes on AlN single crystal substrates: Growth and characterization

2011 Conference on Lasers and Electro-Optics (CLEO).

By: R. Collazo n, S. Mita*, J. Xie*, A. Rice n, J. Tweedie n, R. Dalmau*, B. Moody*, R. Schlesser* ...

Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2011 journal article

Growth and Characterization of AlN and AlGaN Epitaxial Films on AlN Single Crystal Substrates

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 158(5), H530–H535.

By: R. Dalmau*, B. Moody*, R. Schlesser*, S. Mita*, J. Xie*, M. Feneberg*, B. Neuschl*, K. Thonke* ...

Sources: Web Of Science, ORCID
Added: August 6, 2018

2011 journal article

Observation of NH2 species on tilted InN (01(1)over-bar1) facets

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 29(4).

By: A. Acharya*, M. Buegler*, R. Atalay*, N. Dietz*, B. Thoms*, J. Tweedie n, R. Collazo n

Sources: Web Of Science, ORCID
Added: August 6, 2018

2011 journal article

On the strain in n-type GaN

APPLIED PHYSICS LETTERS, 99(14).

By: J. Xie*, S. Mita*, L. Hussey n, A. Rice n, J. Tweedie n, J. LeBeau n, R. Collazo n, Z. Sitar n

author keywords: dislocation climb; elemental semiconductors; Fermi level; gallium compounds; germanium; III-V semiconductors; MOCVD; semiconductor doping; semiconductor epitaxial layers; tensile strength; transmission electron microscopy; vacancies (crystal); vapour phase epitaxial growth; wide band gap semiconductors; X-ray diffraction
Sources: Web Of Science, ORCID
Added: August 6, 2018

2011 article

Progress on n-type doping of AlGaN alloys on AlN single crystal substrates for UV optoelectronic applications

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 7-8, Vol. 8.

By: R. Collazo n, S. Mita*, J. Xie*, A. Rice n, J. Tweedie n, R. Dalmau*, Z. Sitar n, C. Wetzel, A. Khan

author keywords: aluminium nitride; aluminium gallium nitride; n-type doping; UV light emitting diodes
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Sources: Web Of Science, ORCID
Added: August 6, 2018

2011 journal article

Strain in Si doped GaN and the Fermi level effect

APPLIED PHYSICS LETTERS, 98(20).

By: J. Xie*, S. Mita*, A. Rice n, J. Tweedie n, L. Hussey n, R. Collazo n, Z. Sitar n

Sources: Web Of Science, ORCID
Added: August 6, 2018

2011 journal article

Surfactant-enabled epitaxy through control of growth mode with chemical boundary conditions

NATURE COMMUNICATIONS, 2.

By: E. Paisley n, M. Losego n, B. Gaddy n, J. Tweedie n, R. Collazo n, Z. Sitar n, D. Irving n, J. Maria n

TL;DR: This work presents a general synthesis methodology, involving systematic control of the chemical boundary conditions in situ, by which the crystal habit, and thus growth mode, can be actively engineered, and establishes the capability for layer-by-layer deposition in systems that otherwise default to island formation and grainy morphology. (via Semantic Scholar)
Sources: Web Of Science, ORCID
Added: August 6, 2018

2011 journal article

Temperature dependent photoluminescence of lateral polarity junctions of metal organic chemical vapor deposition grown GaN

Journal of Applied Physics, 110(9), 093503.

By: R. Kirste*, R. Collazo n, G. Callsen*, M. Wagner*, T. Kure*, J. Sebastian Reparaz, S. Mita*, J. Xie* ...

Sources: Web Of Science, ORCID, Crossref
Added: August 6, 2018

2010 article

Implementation of the GaN lateral polarity junction in a MESFET utilizing polar doping selectivity

Collazo, R., Mita, S., Xie, J., Rice, A., Tweedie, J., Dalmau, R., & Sitar, Z. (2010, January). PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, Vol. 207, pp. 45–48.

By: R. Collazo n, S. Mita*, J. Xie*, A. Rice n, J. Tweedie n, R. Dalmau*, Z. Sitar n

Sources: Web Of Science, ORCID
Added: August 6, 2018

2010 article

Linear dependency of Al-mole fraction with group-III precursor flows in AlxGa1-xN (0 <= x <= 1) deposition by LP OMVPE

Rice, A., Collazo, R., Tweedie, J., Xie, J., Mita, S., & Sitar, Z. (2010, April 1). JOURNAL OF CRYSTAL GROWTH, Vol. 312, pp. 1321–1324.

By: A. Rice n, R. Collazo n, J. Tweedie n, J. Xie*, S. Mita* & Z. Sitar n

author keywords: Low-pressure metalorganic vapor phase epitaxy; Organometallic vapor phase epitaxy; Nitrides; Semiconducting III-V materials; Semiconducting ternary compounds
Sources: Web Of Science, ORCID
Added: August 6, 2018

2010 journal article

Surface preparation and homoepitaxial deposition of AlN on (0001)-oriented AlN substrates by metalorganic chemical vapor deposition

Journal of Applied Physics, 108(4), 043510.

By: A. Rice n, R. Collazo n, J. Tweedie n, R. Dalmau*, S. Mita*, J. Xie*, Z. Sitar n

Sources: Web Of Science, Crossref, ORCID
Added: August 6, 2018

2010 journal article

The effect of N-polar GaN domains as Ohmic contacts

APPLIED PHYSICS LETTERS, 97(12).

By: J. Xie*, S. Mita*, R. Collazo n, A. Rice n, J. Tweedie n & Z. Sitar n

author keywords: adsorption; contact resistance; elemental semiconductors; gallium compounds; Hall effect; III-V semiconductors; MOCVD; ohmic contacts; secondary ion mass spectra; semiconductor doping; silicon; wide band gap semiconductors
Sources: Web Of Science, ORCID
Added: August 6, 2018

2010 journal article

X-ray characterization of composition and relaxation of Al(x)Ga(1-x)N(0 <= x <= 1) layers grown on GaN/sapphire templates by low pressure organometallic vapor phase epitaxy

JOURNAL OF APPLIED PHYSICS, 108(4).

By: J. Tweedie n, R. Collazo n, A. Rice n, J. Xie*, S. Mita*, R. Dalmau*, Z. Sitar n

Sources: Web Of Science, ORCID
Added: August 6, 2018

2008 journal article

The influence of substrate polarity on the structural quality of InN layers grown by high-pressure chemical vapor deposition

APPLIED PHYSICS LETTERS, 92(4).

By: N. Dietz*, M. Alevli*, R. Atalay*, G. Durkaya*, R. Collazo n, J. Tweedie n, S. Mita n, Z. Sitar n

Sources: Web Of Science, ORCID
Added: August 6, 2018

conference paper

Point defect management in GaN by Fermi-level control during growth

Hoffmann, M. P., Tweedie, J., Kirste, R., Bryan, Z., Bryan, I., Gerhold, M., … Collazo, R. Gallium nitride materials and devices ix, 8986.

By: M. Hoffmann, J. Tweedie, R. Kirste, Z. Bryan, I. Bryan, M. Gerhold, Z. Sitar, R. Collazo

Source: NC State University Libraries
Added: August 6, 2018

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