@article{stein_khachariya_mecouch_mita_reddy_tweedie_sierakowski_kamler_bockowski_kohn_et al._2023, title={Analysis of Vertical GaN JBS and p-n Diodes by Mg Ion Implantation and Ultrahigh-Pressure Annealing}, volume={12}, ISSN={["1557-9646"]}, url={https://doi.org/10.1109/TED.2023.3339592}, DOI={10.1109/TED.2023.3339592}, abstractNote={We report on vertical GaN junction barrier Schottky (JBS) diodes formed by Mg ion implantation and ultrahigh -pressure annealing (UHPA). The static ON-state characteristics of the diodes show an ideality factor of 1.05, a turn-on voltage of ~0.7 V, a current rectification ratio of $\sim 10^{11}$ , and a low differential specific ON-resistance that scales with Schottky stripe width in fair agreement with the analytical model. The reverse leakage dependence on Schottky stripe width also agrees well with the analytical model. Implanted p-n junction diodes fabricated on the same wafer exhibit avalanche breakdown in reverse bias with a positive temperature coefficient, but the forward current is limited by a series barrier. Temperature-dependent current–voltage measurements of th p-n diodes verify the presence of the implanted p-n junction and reveal an additional 0.43-eV barrier, which we hypothesize arises from a p-Schottky contact and forms a second diode back-to-back with the p-n junction. This interpretation is supported by analysis of the capacitance–voltage characteristics of the implanted p-n diodes, epitaxial p-n diodes fabricated with intentional p-Schottky contacts, and comparison to TCAD simulations. Ultimately, the presence of the p-Schottky contact does not hinder JBS diode operation. The use of diffusion-aware designs and/or diffusion reduction represents future directions for Mg implantation technology in GaN power devices.}, journal={IEEE TRANSACTIONS ON ELECTRON DEVICES}, author={Stein, Shane R. and Khachariya, Dolar and Mecouch, Will and Mita, Seiji and Reddy, Pramod and Tweedie, James and Sierakowski, Kacper and Kamler, Grzegorz and Bockowski, Michal and Kohn, Erhard and et al.}, year={2023}, month={Dec} } @article{quinones_khachariya_bagheri_reddy_mita_kirste_rathkanthiwar_tweedie_pavlidis_kohn_et al._2023, title={Demonstration of near-ideal Schottky contacts to Si-doped AlN}, volume={123}, ISSN={["1077-3118"]}, url={https://doi.org/10.1063/5.0174524}, DOI={10.1063/5.0174524}, abstractNote={Near-ideal behavior in Schottky contacts to Si-doped AlN was observed as evidenced by a low ideality factor of 1.5 at room temperature. A temperature-independent Schottky barrier height of 1.9 eV was extracted from temperature-dependent I–V measurements. An activation energy of ∼300 meV was observed in the series resistance, which corresponded to the ionization energy of the deep Si donor state. Both Ohmic and Schottky contacts were stable up to 650 °C, with around four orders of magnitude rectification at this elevated temperature. These results demonstrate the potential of AlN as a platform for power devices capable of operating in extreme environments.}, number={17}, journal={APPLIED PHYSICS LETTERS}, author={Quinones, C. E. and Khachariya, D. and Bagheri, P. and Reddy, P. and Mita, S. and Kirste, R. and Rathkanthiwar, S. and Tweedie, J. and Pavlidis, S. and Kohn, E. and et al.}, year={2023}, month={Oct} } @article{bagheri_quinones-garcia_khachariya_loveless_guan_rathkanthiwar_reddy_kirste_mita_tweedie_et al._2023, title={High conductivity in Ge-doped AlN achieved by a non-equilibrium process}, volume={122}, ISSN={["1077-3118"]}, url={https://doi.org/10.1063/5.0146439}, DOI={10.1063/5.0146439}, abstractNote={Highly conductive Ge-doped AlN with conductivity of 0.3 (Ω cm)−1 and electron concentration of 2 × 1018 cm−3 was realized via a non-equilibrium process comprising ion implantation and annealing at a moderate thermal budget. Similar to a previously demonstrated shallow donor state in Si-implanted AlN, Ge implantation also showed a shallow donor behavior in AlN with an ionization energy ∼80 meV. Ge showed a 3× higher conductivity than its Si counterpart for a similar doping level. Photoluminescence spectroscopy indicated that higher conductivity for Ge-doped AlN was achieved primarily due to lower compensation. This is the highest n-type conductivity reported for AlN doped with Ge to date and demonstration of technologically useful conductivity in Ge-doped AlN.}, number={14}, journal={APPLIED PHYSICS LETTERS}, author={Bagheri, Pegah and Quinones-Garcia, Cristyan and Khachariya, Dolar and Loveless, James and Guan, Yan and Rathkanthiwar, Shashwat and Reddy, Pramod and Kirste, Ronny and Mita, Seiji and Tweedie, James and et al.}, year={2023}, month={Apr} } @article{stein_khachariya_mita_breckenridge_tweedie_reddy_sierakowski_kamler_bockowski_kohn_et al._2023, title={Schottky contacts on ultra-high-pressure-annealed GaN with high rectification ratio and near-unity ideality factor}, volume={16}, ISSN={["1882-0786"]}, DOI={10.35848/1882-0786/acc443}, abstractNote={Abstract}, number={3}, journal={APPLIED PHYSICS EXPRESS}, author={Stein, Shane R. and Khachariya, Dolar and Mita, Seiji and Breckenridge, M. Hayden and Tweedie, James and Reddy, Pramod and Sierakowski, Kacper and Kamler, Grzegorz and Bockowski, Michal and Kohn, Erhard and et al.}, year={2023}, month={Mar} } @article{rathkanthiwar_graziano_tweedie_mita_kirste_collazo_sitar_2022, title={Crystallographic Tilt in Aluminum Gallium Nitride Epilayers Grown on Miscut Aluminum Nitride Substrates}, volume={10}, ISSN={["1862-6270"]}, DOI={10.1002/pssr.202200323}, abstractNote={Heteroepitaxial crystallographic tilt has been investigated as a possible strain‐relief mechanism in Al‐rich (Al>50%) AlGaN heteroepitaxial layers grown on single‐crystal (0001) AlN substrates with varying miscuts from 0.05° to 4.30°. The magnitude of the elastic lattice deformation‐induced tilt increases monotonically with the miscut angle, tightly following the Nagai tilt model. Although tilt angles as high as 0.1° are recorded, reciprocal space mapping (RSM) broadening and wafer bow measurements do not show any significant changes as a function of the heteroepitaxial tilt angle. While crystallographic tilting has been shown to be effective in controlling strain in some other heteroepitaxial systems, it does not provide any appreciable strain relief of the compressive strain in AlGaN/AlN heteroepitaxy.}, journal={PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS}, author={Rathkanthiwar, Shashwat and Graziano, Milena B. and Tweedie, James and Mita, Seiji and Kirste, Ronny and Collazo, Ramon and Sitar, Zlatko}, year={2022}, month={Oct} } @article{bagheri_quinones-garcia_khachariya_rathkanthiwar_reddy_kirste_mita_tweedie_collazo_sitar_2022, title={High electron mobility in AlN:Si by point and extended defect management}, volume={132}, ISSN={["1089-7550"]}, url={https://doi.org/10.1063/5.0124589}, DOI={10.1063/5.0124589}, abstractNote={High room temperature n-type mobility, exceeding 300 cm2/Vs, was demonstrated in Si-doped AlN. Dislocations and CN−1 were identified as the main compensators for AlN grown on sapphire and AlN single crystalline substrates, respectively, limiting the lower doping limit and mobility. Once the dislocation density was reduced by the growth on AlN wafers, C-related compensation could be reduced by controlling the process supersaturation and Fermi level during growth. While the growth on sapphire substrates supported only high doping ([Si] > 5 × 1018 cm−3) and low mobility (∼20 cm2/Vs), growth on AlN with proper compensation management enabled controlled doping at two orders of magnitude lower dopant concentrations. This work is of crucial technological importance because it enables the growth of drift layers for AlN-based power devices.}, number={18}, journal={JOURNAL OF APPLIED PHYSICS}, author={Bagheri, Pegah and Quinones-Garcia, Cristyan and Khachariya, Dolar and Rathkanthiwar, Shashwat and Reddy, Pramod and Kirste, Ronny and Mita, Seiji and Tweedie, James and Collazo, Ramon and Sitar, Zlatko}, year={2022}, month={Nov} } @article{reddy_mecouch_breckenridge_khachariya_bagheri_kim_guan_mita_moody_tweedie_et al._2022, title={Large-Area, Solar-Blind, Sub-250 nm Detection AlGaN Avalanche Photodiodes Grown on AlN Substrates}, volume={3}, ISSN={["1862-6270"]}, url={https://doi.org/10.1002/pssr.202100619}, DOI={10.1002/pssr.202100619}, abstractNote={Herein, Al‐rich AlGaN‐based avalanche photodiodes (APDs) grown on single crystal AlN substrates high ultraviolet‐C sensitivity for λ < 200 nm are fabricated, while exhibiting blindness to λ > 250 nm. A maximum quantum efficiency of 68% and peak gain of 320 000 are estimated resulting in a figure of merit of ≈220 000 in devices with ϕ = 100 μm. As expected, a decrease in gain with increase in device size is observed and a gain of ≈20 000 is estimated in devices with ϕ = 400 μm. Overall, two orders of magnitude higher performance are observed in APDs on single crystal AlN substrates compared to those on sapphire.}, journal={PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS}, publisher={Wiley}, author={Reddy, Pramod and Mecouch, Will and Breckenridge, M. Hayden and Khachariya, Dolar and Bagheri, Pegah and Kim, Ji Hyun and Guan, Yan and Mita, Seiji and Moody, Baxter and Tweedie, James and et al.}, year={2022}, month={Mar} } @article{rathkanthiwar_bagheri_khachariya_mita_pavlidis_reddy_kirste_tweedie_sitar_collazo_2022, title={Point-defect management in homoepitaxially grown Si-doped GaN by MOCVD for vertical power devices}, volume={15}, ISSN={["1882-0786"]}, DOI={10.35848/1882-0786/ac6566}, abstractNote={Abstract}, number={5}, journal={APPLIED PHYSICS EXPRESS}, author={Rathkanthiwar, Shashwat and Bagheri, Pegah and Khachariya, Dolar and Mita, Seiji and Pavlidis, Spyridon and Reddy, Pramod and Kirste, Ronny and Tweedie, James and Sitar, Zlatko and Collazo, Ramon}, year={2022}, month={May} } @article{rathkanthiwar_dycus_mita_kirste_tweedie_collazo_sitar_2022, title={Pseudomorphic growth of thick Al0.6Ga0.4N epilayers on AlN substrates}, volume={120}, ISSN={["1077-3118"]}, DOI={10.1063/5.0092937}, abstractNote={We report on the absence of strain relaxation mechanism in Al0.6Ga0.4N epilayers grown on (0001) AlN substrates for thickness as large as 3.5 μm, three-orders of magnitude beyond the Matthews–Blakeslee critical thickness for the formation of misfit dislocations (MDs). A steady-state compressive stress of 3–4 GPa was observed throughout the AlGaN growth leading to a large lattice bow (a radius of curvature of 0.5 m−1) for the thickest sample. Despite the large lattice mismatch-induced strain energy, the epilayers exhibited a smooth and crack-free surface morphology. These results point to the presence of a large barrier for nucleation of MDs in Al-rich AlGaN epilayers. Compositionally graded AlGaN layers were investigated as potential strain relief layers by the intentional introduction of MDs. While the graded layers abetted MD formation, the inadequate length of these MDs correlated with insignificant strain relaxation. This study emphasizes the importance of developing strain management strategies for the implementation of the single-crystal AlN substrate platform for III-nitride deep-UV optoelectronics and power electronics.}, number={20}, journal={APPLIED PHYSICS LETTERS}, author={Rathkanthiwar, Shashwat and Dycus, J. Houston and Mita, Seiji and Kirste, Ronny and Tweedie, James and Collazo, Ramon and Sitar, Zlatko}, year={2022}, month={May} } @article{khachariya_stein_mecouch_breckenridge_rathkanthiwar_mita_moody_reddy_tweedie_kirste_et al._2022, title={Vertical GaN junction barrier Schottky diodes with near-ideal performance using Mg implantation activated by ultra-high-pressure annealing}, volume={15}, ISSN={["1882-0786"]}, DOI={10.35848/1882-0786/ac8f81}, abstractNote={Abstract}, number={10}, journal={APPLIED PHYSICS EXPRESS}, author={Khachariya, Dolar and Stein, Shane and Mecouch, Will and Breckenridge, M. Hayden and Rathkanthiwar, Shashwat and Mita, Seiji and Moody, Baxter and Reddy, Pramod and Tweedie, James and Kirste, Ronny and et al.}, year={2022}, month={Oct} } @article{breckenridge_tweedie_reddy_guan_bagheri_szymanski_mita_sierakowski_bockowski_collazo_et al._2021, title={High Mg activation in implanted GaN by high temperature and ultrahigh pressure annealing}, volume={118}, ISSN={["1077-3118"]}, url={https://doi.org/10.1063/5.0038628}, DOI={10.1063/5.0038628}, abstractNote={We demonstrate high p-type conductivity and hole concentrations >1018 cm−3 in Mg-implanted GaN. The implantation was performed at room temperature and by post-implantation annealing at 1 GPa of N2 and in a temperature range of 1200–1400 °C. The high pressure thermodynamically stabilized the GaN surface without the need of a capping layer. We introduce a “diffusion budget,” related to the diffusion length, as a convenient engineering parameter for comparing samples annealed at different temperatures and for different times. Although damage recovery, as measured by XRD, was achieved at relatively low diffusion budgets, these samples did not show p-type conductivity. Further analyses showed heavy compensation by the implantation-induced defects. Higher diffusion budgets resulted in a low Mg ionization energy (∼115 meV) and almost complete Mg activation. For even higher diffusion budgets, we observed significant loss of Mg to the surface and a commensurate reduction in the hole conductivity. High compensation at low diffusion budgets and loss of Mg at high diffusion budgets present a unique challenge for shallow implants. A direct control of the formation of compensating defects arising from the implantation damage may be necessary to achieve both hole conductivity and low Mg diffusion.}, number={2}, journal={APPLIED PHYSICS LETTERS}, publisher={AIP Publishing}, author={Breckenridge, M. Hayden and Tweedie, James and Reddy, Pramod and Guan, Yan and Bagheri, Pegah and Szymanski, Dennis and Mita, Seiji and Sierakowski, Kacper and Bockowski, Michal and Collazo, Ramon and et al.}, year={2021}, month={Jan} } @article{breckenridge_bagheri_guo_sarkar_khachariya_pavlidis_tweedie_kirste_mita_reddy_et al._2021, title={High n-type conductivity and carrier concentration in Si-implanted homoepitaxial AlN}, volume={118}, ISSN={["1077-3118"]}, url={https://doi.org/10.1063/5.0042857}, DOI={10.1063/5.0042857}, abstractNote={We demonstrate Si-implanted AlN with high conductivity (>1 Ω−1 cm−1) and high carrier concentration (5 × 1018 cm−3). This was enabled by Si implantation into AlN with a low threading dislocation density (TDD) (<103 cm−2), a non-equilibrium damage recovery and dopant activation annealing process, and in situ suppression of self-compensation during the annealing. Low TDD and active suppression of VAl-nSiAl complexes via defect quasi Fermi level control enabled low compensation, while low-temperature, non-equilibrium annealing maintained the desired shallow donor state with an ionization energy of ∼70 meV. The realized n-type conductivity and carrier concentration are over one order of magnitude higher than that reported thus far and present a major technological breakthrough in doping of AlN.}, number={11}, journal={APPLIED PHYSICS LETTERS}, author={Breckenridge, M. Hayden and Bagheri, Pegah and Guo, Qiang and Sarkar, Biplab and Khachariya, Dolar and Pavlidis, Spyridon and Tweedie, James and Kirste, Ronny and Mita, Seiji and Reddy, Pramod and et al.}, year={2021}, month={Mar} } @article{graziano_bryan_bryan_kirste_tweedie_collazo_sitar_2019, title={Structural characteristics of m-plane AlN substrates and homoepitaxial films}, volume={507}, ISSN={["1873-5002"]}, DOI={10.1016/j.jcrysgro.2018.07.012}, abstractNote={Homoepitaxial non-polar AlN films were realized on m-plane (101-0)-oriented AlN single crystals by metalorganic chemical vapor deposition (MOCVD). The microstructural properties of m-plane AlN substrates and homoepitaxial films were assessed by means of atomic force microscopy and high resolution x-ray diffraction characterization. Results indicated that both m-plane AlN substrates and films possessed exceptional structural quality, with some anisotropic mosaic distributions due to the quasi-bulk nature of the non-polar single crystals. An increase in the MOCVD growth temperature was noted to minimize the degree of inherited mosaic anisotropy without altering the m-plane AlN film growth rate, indicating that high temperature growth is critical to produce optimal film crystallinity. A dramatic change in the film surface morphology from heavily faceted “slate-like” features to monolayer steps was observed as the growth temperature was increased. The “slate-like” surface morphology produced low intensity cross-streaks in symmetric (101-0) reciprocal space maps, tilted about 18° away from the (101-0) crystal truncation rod. The orientation of these diffuse streaks corresponds to the physical alignment of the slates with respect to the substrate surface normal. X-ray line scans and defect-selective reciprocal space mapping confirmed that these low intensity streaks are solely dependent on this peculiar surface structure produced at low MOCVD growth temperatures and unrelated to basal plane stacking faults or other extended defects. All observations confirm that high quality III-nitride epitaxial structures on m-plane AlN substrates are attainable with controllable MOCVD growth processes, as demanded for future high performing AlN-based non-polar devices.}, journal={JOURNAL OF CRYSTAL GROWTH}, author={Graziano, Milena Bobea and Bryan, Isaac and Bryan, Zachary and Kirste, Ronny and Tweedie, James and Collazo, Ramon and Sitar, Zlatko}, year={2019}, month={Feb}, pages={389–394} } @article{guo_kirste_mita_tweedie_reddy_washiyama_breckenridge_collazo_sitar_2019, title={The polarization field in Al-rich AlGaN multiple quantum wells}, volume={58}, ISSN={["1347-4065"]}, DOI={10.7567/1347-4065/ab07a9}, abstractNote={Abstract}, journal={JAPANESE JOURNAL OF APPLIED PHYSICS}, author={Guo, Qiang and Kirste, Ronny and Mita, Seiji and Tweedie, James and Reddy, Pramod and Washiyama, Shun and Breckenridge, M. Hayden and Collazo, Ramon and Sitar, Zlatko}, year={2019}, month={Jun} } @article{sarkar_reddy_kaess_haidet_tweedie_mita_kirste_kohn_collazo_sitar_et al._2017, title={(Invited) Material Considerations for the Development of III-nitride Power Devices}, volume={80}, ISBN={["978-1-62332-476-6"]}, ISSN={["1938-6737"]}, url={http://www.scopus.com/inward/record.url?eid=2-s2.0-85033580489&partnerID=MN8TOARS}, DOI={10.1149/08007.0029ecst}, abstractNote={With advancement in growth of native III-nitride substrates, remarkable progress has been made to extend the functionality of GaN based power electronic devices. The low dislocation epitaxial films grown on native substrates outperforms the films grown on foreign substrates. However, several material considerations has to be incorporated in order to exploit the full potential of GaN and AlxGa1-xN (0