@article{reddy_mecouch_breckenridge_khachariya_bagheri_kim_guan_mita_moody_tweedie_et al._2022, title={Large-Area, Solar-Blind, Sub-250 nm Detection AlGaN Avalanche Photodiodes Grown on AlN Substrates}, DOI={10.1002/pssr.202100619}, journal={PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS}, author={Reddy, Pramod and Mecouch, Will and Breckenridge, M. Hayden and Khachariya, Dolar and Bagheri, Pegah and Kim, Ji Hyun and Guan, Yan and Mita, Seiji and Moody, Baxter and Tweedie, James and et al.}, year={2022}, month={Mar} }
 @article{rathkanthiwar_bagheri_khachariya_mita_pavlidis_reddy_kirste_tweedie_sitar_collazo_2022, title={Point-defect management in homoepitaxially grown Si-doped GaN by MOCVD for vertical power devices}, DOI={10.35848/1882-0786/ac6566}, journal={APPLIED PHYSICS EXPRESS}, author={Rathkanthiwar, Shashwat and Bagheri, Pegah and Khachariya, Dolar and Mita, Seiji and Pavlidis, Spyridon and Reddy, Pramod and Kirste, Ronny and Tweedie, James and Sitar, Zlatko and Collazo, Ramon}, year={2022}, month={May} }
 @article{rathkanthiwar_dycus_mita_kirste_tweedie_collazo_sitar_2022, title={Pseudomorphic growth of thick Al0.6Ga0.4N epilayers on AlN substrates}, DOI={10.1063/5.0092937}, journal={APPLIED PHYSICS LETTERS}, author={Rathkanthiwar, Shashwat and Dycus, J. Houston and Mita, Seiji and Kirste, Ronny and Tweedie, James and Collazo, Ramon and Sitar, Zlatko}, year={2022}, month={May} }
 @article{breckenridge_tweedie_reddy_guan_bagheri_szymanski_mita_sierakowski_bockowski_collazo_et al._2021, title={High Mg activation in implanted GaN by high temperature and ultrahigh pressure annealing}, volume={118}, ISBN={1077-3118}, DOI={10.1063/5.0038628}, number={2}, journal={APPLIED PHYSICS LETTERS}, author={Breckenridge, M. Hayden and Tweedie, James and Reddy, Pramod and Guan, Yan and Bagheri, Pegah and Szymanski, Dennis and Mita, Seiji and Sierakowski, Kacper and Bockowski, Michal and Collazo, Ramon and et al.}, year={2021} }
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 @article{graziano_bryan_bryan_kirste_tweedie_collazo_sitar_2019, title={Structural characteristics of m-plane AlN substrates and homoepitaxial films}, volume={507}, DOI={10.1016/j.jcrysgro.2018.07.012}, journal={JOURNAL OF CRYSTAL GROWTH}, author={Graziano, Milena Bobea and Bryan, Isaac and Bryan, Zachary and Kirste, Ronny and Tweedie, James and Collazo, Ramon and Sitar, Zlatko}, year={2019}, pages={389–394} }
 @article{guo_kirste_mita_tweedie_reddy_washiyama_breckenridge_collazo_sitar_2019, title={The polarization field in Al-rich AlGaN multiple quantum wells}, volume={58}, ISBN={1347-4065}, DOI={10.7567/1347-4065/ab07a9}, journal={JAPANESE JOURNAL OF APPLIED PHYSICS}, author={Guo, Qiang and Kirste, Ronny and Mita, Seiji and Tweedie, James and Reddy, Pramod and Washiyama, Shun and Breckenridge, M. Hayden and Collazo, Ramon and Sitar, Zlatko}, year={2019} }
 @article{reddy_kaess_tweedie_kirste_mita_collazo_sitar_2017, title={Defect quasi Fermi level control-based C-N reduction in GaN: Evidence for the role of minority carriers}, volume={111}, DOI={10.1063/1.5000720}, number={15}, journal={Applied Physics Letters}, author={Reddy, P. and Kaess, F. and Tweedie, J. and Kirste, R. and Mita, S. and Collazo, R. and Sitar, Z.}, year={2017} }
 @article{sarkar_mita_reddy_klump_kaess_tweedie_bryan_bryan_kirste_kohn_et al._2017, title={High free carrier concentration in p-GaN grown on AlN substrates}, volume={111}, DOI={10.1063/1.4995239}, number={3}, journal={Applied Physics Letters}, author={Sarkar, B. and Mita, S. and Reddy, P. and Klump, A. and Kaess, F. and Tweedie, J. and Bryan, I. and Bryan, Z. and Kirste, R. and Kohn, E. and et al.}, year={2017} }
 @inproceedings{sarkar_reddy_kaess_haidet_tweedie_mita_kirste_kohn_collazo_sitar_2017, title={Material considerations for the development of III-nitride power devices}, volume={80}, DOI={10.1149/08007.0029ecst}, number={7}, booktitle={Gallium nitride and silicon carbide power technologies 7}, author={Sarkar, B. and Reddy, P. and Kaess, F. and Haidet, B. B. and Tweedie, J. and Mita, S. and Kirste, R. and Kohn, E. and Collazo, R. and Sitar, Z.}, year={2017}, pages={29–36} }
 @inproceedings{franke_hoffmann_hernandez-balderrama_kaess_bryan_washiyama_bobea_tweedie_kirste_gerhold_et al._2016, title={Strain engineered high reflectivity DBRs in the deep UV}, volume={9748}, DOI={10.1117/12.2211700}, booktitle={Gallium nitride materials and devices xi}, author={Franke, A. and Hoffmann, P. and Hernandez-Balderrama, L. and Kaess, F. and Bryan, I. and Washiyama, S. and Bobea, M. and Tweedie, J. and Kirste, R. and Gerhold, M. and et al.}, year={2016} }
 @article{hoffmann_kirste_mita_guo_tweedie_bobea_bryan_bryan_gerhold_collazo_et al._2015, title={Growth and characterization of AlxGa1-xN lateral polarity structures}, volume={212}, DOI={10.1002/pssa.201431740}, number={5}, journal={Physica Status Solidi. A, Applications and Materials Science}, author={Hoffmann, M. P. and Kirste, R. and Mita, S. and Guo, W. and Tweedie, J. and Bobea, M. and Bryan, I. and Bryan, Z. and Gerhold, M. and Collazo, R. and et al.}, year={2015}, pages={1039–1042} }
 @article{bryan_bryan_gaddy_reddy_hussey_bobea_guo_hoffmann_kirste_tweedie_et al._2014, title={Fermi level control of compensating point defects during metalorganic chemical vapor deposition growth of Si-doped AlGaN}, volume={105}, DOI={10.1063/1.4903058}, number={22}, journal={Applied Physics Letters}, author={Bryan, Z. and Bryan, I. and Gaddy, B. E. and Reddy, P. and Hussey, L. and Bobea, M. and Guo, W. and Hoffmann, M. and Kirste, R. and Tweedie, J. and et al.}, year={2014} }
 @inproceedings{kirste_mita_hoffmann_hussey_guo_bryan_bryan_tweedie_gerhold_hoffmann_et al._2014, title={Properties of AlN based lateral polarity structures}, volume={11}, DOI={10.1002/pssc.201300287}, number={2}, booktitle={Physica status solidi c: current topics in solid state physics, vol 11, no 2}, author={Kirste, R. and Mita, S. and Hoffmann, M. P. and Hussey, L. and Guo, W. and Bryan, I. and Bryan, Z. and Tweedie, J. and Gerhold, M. and Hoffmann, A. and et al.}, year={2014}, pages={261–264} }
 @article{reddy_bryan_bryan_tweedie_kirste_collazo_sitar_2014, title={Schottky contact formation on polar and non-polar AlN}, volume={116}, DOI={10.1063/1.4901954}, number={19}, journal={Journal of Applied Physics}, author={Reddy, P. and Bryan, I. and Bryan, Z. and Tweedie, J. and Kirste, R. and Collazo, R. and Sitar, Z.}, year={2014} }
 @inproceedings{bryan_akouala_tweedie_bryan_rice_kirste_collazo_sitar_2014, title={Surface preparation of non-polar single-crystalline AlN substrates}, volume={11}, DOI={10.1002/pssc.201300401}, number={3-4}, booktitle={Physica status solidi c: current topics in solid state physics, vol 11, no 3-4}, author={Bryan, I. and Akouala, C. R. and Tweedie, J. and Bryan, Z. and Rice, A. and Kirste, R. and Collazo, R. and Sitar, Z.}, year={2014}, pages={454–457} }
 @article{guo_xie_akouala_mita_rice_tweedie_bryan_collazo_sitar_2013, title={Comparative study of etching high crystalline quality AlN and GaN}, volume={366}, DOI={10.1016/j.jcrysgro.2012.12.141}, journal={Journal of Crystal Growth}, author={Guo, W. and Xie, J. and Akouala, C. and Mita, S. and Rice, A. and Tweedie, J. and Bryan, I. and Collazo, R. and Sitar, Z.}, year={2013}, pages={20–25} }
 @article{kirste_hoffmann_tweedie_bryan_callsen_kure_nenstiel_wagner_collazo_hoffmann_et al._2013, title={Compensation effects in GaN: Mg probed by Raman spectroscopy and photoluminescence measurements}, volume={113}, DOI={10.1063/1.4794094}, number={10}, journal={Journal of Applied Physics}, author={Kirste, R. and Hoffmann, M. P. and Tweedie, J. and Bryan, Z. and Callsen, G. and Kure, T. and Nenstiel, C. and Wagner, M. R. and Collazo, R. and Hoffmann, A. and et al.}, year={2013} }
 @article{bryan_hoffmann_tweedie_kirste_callsen_bryan_rice_bobea_mita_xie_et al._2013, title={Fermi level control of point defects during growth of Mg-doped GaN}, volume={42}, DOI={10.1007/s11664-012-2342-9}, number={5}, journal={Journal of Electronic Materials}, author={Bryan, Z. and Hoffmann, M. and Tweedie, J. and Kirste, R. and Callsen, G. and Bryan, I. and Rice, A. and Bobea, M. and Mita, S. and Xie, J. Q. and et al.}, year={2013}, pages={815–819} }
 @article{kirste_mita_hussey_hoffmann_guo_bryan_bryan_tweedie_xie_gerhold_et al._2013, title={Polarity control and growth of lateral polarity structures in AlN}, volume={102}, DOI={10.1063/1.4804575}, number={18}, journal={Applied Physics Letters}, author={Kirste, R. and Mita, S. and Hussey, L. and Hoffmann, M. P. and Guo, W. and Bryan, I. and Bryan, Z. and Tweedie, J. and Xie, J. Q. and Gerhold, M. and et al.}, year={2013} }
 @article{bobea_tweedie_bryan_bryan_rice_dalmau_xie_collazo_sitar_2013, title={X-ray characterization techniques for the assessment of surface damage in crystalline wafers: A model study in AlN}, volume={113}, DOI={10.1063/1.4798352}, number={12}, journal={Journal of Applied Physics}, author={Bobea, M. and Tweedie, J. and Bryan, I. and Bryan, Z. and Rice, A. and Dalmau, R. and Xie, J. and Collazo, R. and Sitar, Z.}, year={2013} }
 @article{callsen_wagner_kure_reparaz_bugler_brunnmeier_nenstiel_hoffmann_hoffmann_tweedie_et al._2012, title={Optical signature of Mg-doped GaN: Transfer processes}, volume={86}, DOI={10.1103/physrevb.86.075207}, number={7}, journal={Physical Review. B, Condensed Matter and Materials Physics}, author={Callsen, G. and Wagner, M. R. and Kure, T. and Reparaz, J. S. and Bugler, M. and Brunnmeier, J. and Nenstiel, C. and Hoffmann, A. and Hoffmann, M. and Tweedie, J. and et al.}, year={2012} }
 @inproceedings{tweedie_collazo_rice_mita_xie_akouala_sitar_2012, title={Schottky barrier and interface chemistry for Ni contacted to Al0.8Ga0.2N grown on c-oriented AlN single crystal substrates}, volume={9}, DOI={10.1002/pssc.201100435}, number={3-4}, booktitle={Physica status solidi c: current topics in solid state physics, vol 9, no 3-4}, author={Tweedie, J. and Collazo, R. and Rice, A. and Mita, S. and Xie, J. Q. and Akouala, R. C. and Sitar, Z.}, year={2012}, pages={584–587} }
 @inproceedings{collazo_mita_xie_rice_tweedie_dalmau_moody_schlesser_kirste_hoffmann_et al._2011, title={265 nm light emitting diodes on AlN single crystal substrates: Growth and characterization}, DOI={10.1364/cleo_si.2011.ctuu2}, booktitle={2011 Conference on Lasers and Electro-Optics (CLEO)}, author={Collazo, R. and Mita, S. and Xie, J. Q. and Rice, A. and Tweedie, J. and Dalmau, R. and Moody, B. and Schlesser, R. and Kirste, R. and Hoffmann, A. and et al.}, year={2011} }
 @article{dalmau_moody_schlesser_mita_xie_feneberg_neuschl_thonke_collazo_rice_et al._2011, title={Growth and characterization of AlN and AlGaN epitaxial films on AlN single crystal substrates}, volume={158}, DOI={10.1149/1.3560527}, number={5}, journal={Journal of the Electrochemical Society}, author={Dalmau, R. and Moody, B. and Schlesser, R. and Mita, S. and Xie, J. and Feneberg, M. and Neuschl, B. and Thonke, K. and Collazo, R. and Rice, A. and et al.}, year={2011}, pages={H530–535} }
 @article{acharya_buegler_atalay_dietz_thoms_tweedie_collazo_2011, title={Observation of NH(2) species on tilted InN (01(1)over-bar1) facets}, volume={29}, DOI={10.1116/1.3596619}, number={4}, journal={Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films}, author={Acharya, A. R. and Buegler, M. and Atalay, R. and Dietz, N. and Thoms, B. D. and Tweedie, J. S. and Collazo, R.}, year={2011} }
 @article{xie_mita_hussey_rice_tweedie_lebeau_collazo_sitar_2011, title={On the strain in n-type GaN}, volume={99}, DOI={10.1063/1.3647772}, number={14}, journal={Applied Physics Letters}, author={Xie, J. Q. and Mita, S. and Hussey, L. and Rice, A. and Tweedie, J. and LeBeau, J. and Collazo, R. and Sitar, Z.}, year={2011} }
 @inproceedings{collazo_mita_xie_rice_tweedie_dalmau_sitar_2011, title={Progress on n-type doping of AlGaN alloys on AlN single crystal substrates for UV optoelectronic applications}, volume={8}, DOI={10.1002/pssc.201000964}, number={7-8}, booktitle={Physica status solidi c: current topics in solid state physics, vol 8, no 7-8}, author={Collazo, R. and Mita, S. and Xie, J. Q. and Rice, A. and Tweedie, J. and Dalmau, R. and Sitar, Z.}, year={2011} }
 @article{xie_mita_rice_tweedie_hussey_collazo_sitar_2011, title={Strain in Si doped GaN and the Fermi level effect}, volume={98}, DOI={10.1063/1.3589978}, number={20}, journal={Applied Physics Letters}, author={Xie, J. Q. and Mita, S. and Rice, A. and Tweedie, J. and Hussey, L. and Collazo, R. and Sitar, Z.}, year={2011} }
 @article{paisley_losego_gaddy_tweedie_collazo_sitar_irving_maria_2011, title={Surfactant-enabled epitaxy through control of growth mode with chemical boundary conditions}, volume={2}, DOI={10.1038/ncomms1470}, journal={Nature Communications}, author={Paisley, E. A. and Losego, M. D. and Gaddy, B. E. and Tweedie, J. S. and Collazo, R. and Sitar, Z. and Irving, D. L. and Maria, J. P.}, year={2011} }
 @article{kirste_collazo_callsen_wagner_kure_reparaz_mita_xie_rice_tweedie_et al._2011, title={Temperature dependent photoluminescence of lateral polarity junctions of metal organic chemical vapor deposition grown GaN}, volume={110}, DOI={10.1063/1.3656987}, number={9}, journal={Journal of Applied Physics}, author={Kirste, R. and Collazo, R. and Callsen, G. and Wagner, M. R. and Kure, T. and Reparaz, J. S. and Mita, S. and Xie, J. Q. and Rice, A. and Tweedie, J. and et al.}, year={2011} }
 @inproceedings{collazo_mita_xie_rice_tweedie_dalmau_sitar_2010, title={Implementation of the GaN lateral polarity junction in a MESFET utilizing polar doping selectivity}, volume={207}, DOI={10.1002/pssa.200982629}, number={1}, booktitle={Physica Status Solidi. A, Applications and Materials Science}, author={Collazo, R. and Mita, S. and Xie, J. Q. and Rice, A. and Tweedie, J. and Dalmau, R. and Sitar, Z.}, year={2010}, pages={45–48} }
 @inproceedings{rice_collazo_tweedie_xie_mita_sitar_2010, title={Linear dependency of Al-mole fraction with group-III precursor flows in AlxGa1-xN (0 <= x <= 1) deposition by LP OMVPE}, volume={312}, DOI={10.1016/j.jcrysgro.2009.09.011}, number={8}, booktitle={Journal of Crystal Growth}, author={Rice, A. and Collazo, R. and Tweedie, J. and Xie, J. and Mita, S. and Sitar, Z.}, year={2010}, pages={1321–1324} }
 @article{rice_collazo_tweedie_dalmau_mita_xie_sitar_2010, title={Surface preparation and homoepitaxial deposition of AlN on (0001)-oriented AlN substrates by metalorganic chemical vapor deposition}, volume={108}, DOI={10.1063/1.3467522}, number={4}, journal={Journal of Applied Physics}, author={Rice, A. and Collazo, R. and Tweedie, J. and Dalmau, R. and Mita, S. and Xie, J. and Sitar, Z.}, year={2010} }
 @article{xie_mita_collazo_rice_tweedie_sitar_2010, title={The effect of N-polar GaN domains as Ohmic contacts}, volume={97}, DOI={10.1063/1.3491173}, number={12}, journal={Applied Physics Letters}, author={Xie, J. and Mita, S. and Collazo, R. and Rice, A. and Tweedie, J. and Sitar, Z.}, year={2010} }
 @article{tweedie_collazo_rice_xie_mita_dalmau_sitar_2010, title={X-ray characterization of composition and relaxation of AlxGa1-xN(0 <= x <= 1) layers grown on GaN/sapphire templates by low pressure organometallic vapor phase epitaxy}, volume={108}, DOI={10.1063/1.3457149}, number={4}, journal={Journal of Applied Physics}, author={Tweedie, J. and Collazo, R. and Rice, A. and Xie, J. Q. and Mita, S. and Dalmau, R. and Sitar, Z.}, year={2010} }
 @article{dietz_alevli_atalay_durkaya_collazo_tweedie_mita_sitar_2008, title={The influence of substrate polarity on the structural quality of InN layers grown by high-pressure chemical vapor deposition}, volume={92}, DOI={10.1063/1.2840192}, number={4}, journal={Applied Physics Letters}, author={Dietz, N. and Alevli, M. and Atalay, R. and Durkaya, G. and Collazo, R. and Tweedie, J. and Mita, S. and Sitar, Z.}, year={2008} }
 @inproceedings{hoffmann_tweedie_kirste_bryan_bryan_gerhold_sitar_collazo, title={Point defect management in GaN by Fermi-level control during growth}, volume={8986}, booktitle={Gallium nitride materials and devices ix}, author={Hoffmann, M. P. and Tweedie, J. and Kirste, R. and Bryan, Z. and Bryan, I. and Gerhold, M. and Sitar, Z. and Collazo, R.} }