@article{mehta_borders_liu_pandey_datta_lunardi_2016, title={III-V Tunnel FET Model With Closed-Form Analytical Solution}, volume={63}, ISSN={["1557-9646"]}, url={http://dx.doi.org/10.1109/ted.2015.2471808}, DOI={10.1109/ted.2015.2471808}, abstractNote={Using an idealized semianalytical model of charge transport for InAs-based tunneling FET, it is shown that the output and transfer characteristics can be accurately reproduced and could be used to develop compact models. The use of a mathematical approximation for the analytical solution of the surface potential is vital here to minimize the computation time. The 20-nm gate homojunction and 40-nm gate heterojunction transistors have been simulated and compared with the calibrated numerical simulation results. The results are in good agreement.}, number={5}, journal={IEEE TRANSACTIONS ON ELECTRON DEVICES}, author={Mehta, J. U. and Borders, W. A. and Liu, H. and Pandey, R. and Datta, S. and Lunardi, L.}, year={2016}, month={May}, pages={2163–2168} }
 @inproceedings{mehta_lunardi_2015, title={Lateral silicon photodiodes with extremely low dark current for visible and infra-red applications}, url={http://www.scopus.com/inward/record.url?eid=2-s2.0-84964890183&partnerID=MN8TOARS}, DOI={10.1109/ipcon.2015.7323594}, abstractNote={We present two lateral p-i-n photodiodes for operation in the 400-900nm wavelength range. The design is compatible with typical 180nm CMOS process and yields high responsivity and low dark current independent of the geometry.}, booktitle={2015 photonics conference (ipc)}, author={Mehta, J. and Lunardi, Leda}, year={2015}, pages={446–447} }