Works (16)

Updated: May 9th, 2023 12:52

2023 journal article

Monolithic Bidirectional WBG Switches Rekindle Power Electronics Technology [Expert View]

IEEE POWER ELECTRONICS MAGAZINE, 10(1), 71–75.

By: V. Veliadis

Source: Web Of Science
Added: May 1, 2023

2022 article

Comparative Study of 6.5 kV 4H-SiC Discrete Packaged MOSFET, JBSFET, and Co-Pack (MOSFET and JBS Diode)

2022 IEEE 34TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD), pp. 249–252.

By: N. Yun*, J. Lynch*, A. Morgan*, D. Xing*, M. Jin*, J. Qianb, M. Kang*, V. Amarasinghe* ...

author keywords: Silicon Carbide; 4H-SiC; MOSFET; JBSFET; Co-Package; Medium Voltage; Double Pulse Test (DPT); Switching; Short Circuit Capability; Stress; Body Diode Degradation
Source: Web Of Science
Added: September 26, 2022

2022 article

Design Considerations of Multi-Phase Multilevel Inverters for High-Power Density Traction Drive Applications

2022 IEEE/AIAA TRANSPORTATION ELECTRIFICATION CONFERENCE AND ELECTRIC AIRCRAFT TECHNOLOGIES SYMPOSIUM (ITEC+EATS 2022), pp. 23–30.

By: P. Das, S. Satpathy, S. Bhattacharya & V. Veliadis

author keywords: GaN HEMT; Multi-phase drives; Multi-level inverters; DC bus capacitor; dv/dt filter; switching loss; heat sink; common mode voltage.
Sources: Web Of Science, ORCID
Added: September 19, 2022

2021 article

Critical Design Considerations for Static and Dynamic Performances on 6.5 kV 4H-SiC MOSFETs Fabricated in a 6-inch SiC Foundry

2021 IEEE 8TH WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS (WIPDA), pp. 361–365.

By: N. Yun*, J. Lynch*, S. DeBoer*, A. Morgan*, W. Sung, D. Xing*, M. Kang*, A. Agarwal* ...

author keywords: Silicon Carbide; 4H-SiC; MOSFET; Breakdown Voltage; High Voltage; Edge Termination; Implant Straggle; Fabrication; 6-inch Foundry; Package; Short Circuit Capability
Source: Web Of Science
Added: May 10, 2022

2021 article

Design Considerations of Three Phase Active Front End Converter for 13.8 kV Asynchronous Microgrid Power Conditioning System enabled by Series Connection of Gen-3 10 kV SiC MOSFETs

2021 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE), pp. 1211–1218.

author keywords: SIC MOSFETs; JBS Diodes; Medium Voltage; Active Front End Convertrer; Microgrid; Series connection; Grid Forming Converter; Voltage Source Converter; series connection; snubbers; voltage balancing
Sources: Web Of Science, ORCID
Added: July 5, 2022

2021 article

High Voltage Output Characteristics and Short Circuit Robustness of HV SiC MOSFETs

2021 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE), pp. 5277–5282.

By: A. Kumar, R. Kokkonda, S. Bhattacharya, J. Baliga n & V. Veliadis

author keywords: Silicon Carbide; SiC MOSFETs; Short Circuit; Medium Voltage; Robustness
Sources: Web Of Science, ORCID
Added: July 5, 2022

2021 article

Paralleling of Four 650V/60A GaN HEMTs for High Power Traction Drive Applications

2021 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE), pp. 5269–5276.

By: P. Das, S. Satpathy, S. Shah, S. Bhattacharya & V. Veliadis

author keywords: GaN HEMT; paralleling; gate loop; power loop; current sharing; switching loss; conduction loss
Sources: Web Of Science, ORCID
Added: July 5, 2022

2021 article

Performance Comparison and Demonstration of 3-L Voltage Source Inverters Using 3.3 kV SiC MOSFETs for 2.3 kV High Speed Induction Motor Drive Applications

2021 THIRTY-SIXTH ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION (APEC 2021), pp. 1103–1110.

By: A. Kumar, S. Bhattacharya, J. Baliga n & V. Veliadis

author keywords: SiC MOSFET; medium voltage; 3.3-kV; high-speed motor drive; 2.3 kV drive; NPC
Sources: Web Of Science, ORCID
Added: September 20, 2021

2021 article

Performance Evaluation of 10 kV SiC Current Switch Based PWM Current Source Inverter for 4.16 kV Motor Drive Applications

2021 THIRTY-SIXTH ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION (APEC 2021), pp. 1219–1226.

By: A. Kumar, S. Bhattacharya, J. Baliga n & V. Veliadis

author keywords: SiC MOSFET; medium voltage; PWM-CSI; reverse blocking; current switch
Sources: Web Of Science, ORCID
Added: September 20, 2021

2019 article

The Impact of Education in Accelerating Commercialization of Wide-Bandgap Power Electronics

Veliadis, V. (2019, June). IEEE POWER ELECTRONICS MAGAZINE, Vol. 6, pp. 62–66.

By: V. Veliadis

Source: Web Of Science
Added: July 15, 2019

2019 journal article

The South Korean Silicon-Carbide Semiconductor Industry: An Emerging Powerhouse

IEEE POWER ELECTRONICS MAGAZINE, 6(3), 56–60.

By: V. Veliadis & N. Kim*

Source: Web Of Science
Added: September 30, 2019

2018 article

Accelerating Commercialization of Wide-Bandgap Power Electronics

Veliadis, V. (2018, December). IEEE POWER ELECTRONICS MAGAZINE, Vol. 5, pp. 63–65.

By: V. Veliadis

Source: Web Of Science
Added: January 14, 2019

2018 journal article

IEEE ITRW Working Group Position Paper-Materials and Devices WBG and UWBG materials and devices are examined in a new working group

IEEE POWER ELECTRONICS MAGAZINE, 5(2), 45–48.

By: V. Veliadis, R. Kaplar*, J. Zhang n, M. Bakowski*, S. Khalil* & P. Moens*

Source: Web Of Science
Added: August 6, 2018

2018 journal article

IEEE ITRW Working Group Position Paper-System Integration and Application:Silicon Carbide

IEEE POWER ELECTRONICS MAGAZINE, 5(2), 40–44.

By: J. Wang*, V. Veliadis, J. Zhang*, Y. Alsmadi*, P. Wilson* & M. Scott*

Source: Web Of Science
Added: August 6, 2018

2017 conference paper

SiC power device design and fabrication, and insertion in novel MV power converters

2017 ieee energy conversion congress and exposition (ecce).

By: S. Bhattacharya, V. Veliadis & V. Veliadis

Source: NC State University Libraries
Added: August 6, 2018

2017 conference paper

SiC power device design and fabrication, and insertion in novel MV power converters

2017 ieee energy conversion congress and exposition (ecce).

By: S. Bhattacharya, V. Veliadis & V. Veliadis

Source: NC State University Libraries
Added: August 6, 2018