Victor Veliadis

Challenges in Accelerating Power SiC Device Commercialization

IEEE EDTM 2025. Presented at the IEEE EDTM 2025, Hong Kong, China.

Monolithic Bidirectional Lateral GaN Switches Reinvigorate Power Electronics Applications

Veliadis, V., & Jahns, T. (2025, March). IEEE Power Electronics Magazine, 12(1), 22–28.

Silicon Carbide Power Device Fabrication

In S. B. Bayne & B. N. Pushpakaran (Eds.), Power Semiconductor Technology in Pulsed Power Applications (pp. 97–128).

A SiC Based Two-Stage Pulsed Power Converter System for Laser Diode Driving and Other Pulsed Current Applications

IEEE Open Journal of Industry Applications, 5, 455–468.

Accelerating WBG Power Semiconductor Technology Commercialization

47th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe and 18th Expert Evaluation and Control of Compound Semiconductor Materials and Technologies (WOCSDICE-EXMATEC 2024). Presented at the 47th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe and 18th Expert Evaluation and Control of Compound Semiconductor Materials and Technologies (WOCSDICE-EXMATEC 2024), Heraklion Crete, Greece.

Design of Asynchronous Microgrid Power Conditioning System with Gen-3 10 kV SiC MOSFETs for MV Grid Interconnection

Kolli, N., Parashar, S., Kokkonda, R. K., Bhattacharya, S., & Veliadis, V. (2024, February 25). 2024 IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION, APEC, pp. 514–521.

Experimental Study Based Switching Sequence for Reduction of Peak Voltage Transients in GaN-based 3L-ANPC Inverter

2024 IEEE Applied Power Electronics Conference and Exposition (APEC), 1235–1241.

Innovations and Advancements

In M. Di Paolo Emilio (Ed.), SiC Technology: Materials, Manufacturing, Devices and Design for Power Conversion (pp. 271–286).

Manufacturing Processes

Overview of Silicon Carbide

In M. Di Paolo Emilio (Ed.), SiC Technology: Materials, Manufacturing, Devices and Design for Power Conversion (pp. 1–23).

SiC Power Displacing silicon in several high-volume power applications

Semi Interface Magazine: Material Engineering and Interface Optimization, (1), 16–19.

SiC Technology

Switching Modes for Reduction of Peak Voltage Transients in GaN-Based Three Level ANPC Inverter

IEEE Transactions on Industry Applications, 60(6), 9066–9079.

A Feedforward-Based Harmonic Current Minimization Method for Six-Phase Permanent Magnet Synchronous Machine Drives

2023 IEEE Energy Conversion Congress and Exposition (ECCE), 5290–5296.

Barriers to SiC Power Semiconductor Device Commercialization

Pacific Rim Meeting on Electrochemical and Solid-State Science, 6–11,

Comparative Study of PWM Modes for GaN-based Three-Level ANPC Inverter

Determination of Parameters of Symmetrical Six-Phase Permanent Magnet Synchronous Machines

Das, P. P., Satpathy, S., Bhattacharya, S., Veliadis, V., Deshpande, U., & Bhargava, B. (2023, May 15). 2023 IEEE INTERNATIONAL ELECTRIC MACHINES & DRIVES CONFERENCE, IEMDC.

Monolithic Bidirectional WBG Switches Rekindle Power Electronics Technology [Expert View]

Veliadis, V. (2023, March 1). IEEE Power Electronics Magazine, Vol. 10, pp. 71–75.

Operating Mode Analysis and Controller Design for Medium Voltage Asynchronous Microgrid Power Conditioning System

Overview of Wide/Ultrawide Bandgap Power Semiconductor Devices for Distributed Energy Resources

IEEE Journal of Emerging and Selected Topics in Power Electronics, 11(4), 3957–3982.

SiC and GaN Power Devices

More-than-Moore Devices and Integration for Semiconductors, 47–104.

Switching Loss Analysis of Three-Phase Three- Level Neutral Point Clamped Converter Pole Enabled by Series-Connected 10 kV SiC MOSFETs

Kolli, N., Parashar, S., Kokkonda, R. K., Bhattacharya, S., & Veliadis, V. (2023, March 19). 2023 IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION, APEC, pp. 2353–2360.

A New Switching Strategy for a GaN-based Three-Level Active Neutral Point Clamped Converter

Satpathy, S., Das, P. P., Bhattacharya, S., & Veliadis, V. (2022, October 9). 2022 IEEE Energy Conversion Congress and Exposition (ECCE).

A SiC based Two-Stage Pulsed Power Converter System for Laser Diode Driving Applications

Kokkonda, R. K., Bhattacharya, S., Veliadis, V., & Panayiotou, C. (2022, October 9). 2022 IEEE Energy Conversion Congress and Exposition (ECCE).

Comparative Study of 6.5 kV 4H-SiC Discrete Packaged MOSFET, JBSFET, and Co-Pack (MOSFET and JBS Diode)

Yun, N., Lynch, J., Morgan, A. J., Xing, D., Jin, M., Qian, J., … Sung, W. (2022, May 22). 2022 IEEE 34TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD), pp. 249–252.

Design Considerations of Multi-Phase Multilevel Inverters for High-Power Density Traction Drive Applications

Das, P. P., Satpathy, S., Bhattacharya, S., & Veliadis, V. (2022, June 15). 2022 IEEE/AIAA TRANSPORTATION ELECTRIFICATION CONFERENCE AND ELECTRIC AIRCRAFT TECHNOLOGIES SYMPOSIUM (ITEC+EATS 2022), pp. 23–30.

Design Considerations of a GaN-based Three-Level Traction Inverter for Electric Vehicles

Efficient SiC Power Devices Build on Silicon's Legacy

IEEE EE Times, (The next Silicon Frontier 50th Anniversary special edition), 73–76.

Generalized Control Technique for Three-Level Inverter Fed Six-Phase Permanent Magnet Synchronous Machines Under Fault Conditions

Das, P. P., Satpathy, S., Bhattacharya, S., & Veliadis, V. (2022, October 9). 2022 IEEE Energy Conversion Congress and Exposition (ECCE).

Non-CMOS Compatible SiC Power Device Fabrication in Volume Si Fabs

PowerUp conference proceedings. Presented at the PowerUp conference.

SiC Mass Commercialization: Present Status and Barriers to Overcome

Materials Science Forum, 1062, 125–130.

SiC Power Device Mass Commercialization

SiC device manufacturing and road to volume production

International Conference on Compound Semiconductor Manufacturing Technology (CS MANTECH). Presented at the International Conference on Compound Semiconductor Manufacturing Technology (CS MANTECH), Monterey, CA, USA.

A Two-Stage Ultra-Fast Short-Circuit Protection Circuit for Enhancement-Mode GaN HEMTs

2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA). Presented at the IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA).

An Introduction to SiC Power Devices: Status, Challenges, and Outlook

Veliadis, V. (2021, July). IEEE Electron Devices Society Newsletter, 28(3), 9–16.

Critical Design Considerations for Static and Dynamic Performances on 6.5 kV 4H-SiC MOSFETs Fabricated in a 6-inch SiC Foundry

Yun, N., Lynch, J., DeBoer, S., Morgan, A. J., Sung, W., Xing, D., … Ransom, J. (2021, November 7). 2021 IEEE 8TH WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS (WIPDA), pp. 361–365.

Design Considerations of Three Phase Active Front End Converter for 13.8 kV Asynchronous Microgrid Power Conditioning System enabled by Series Connection of Gen-3 10 kV SiC MOSFETs

Fabricating SiC Devices: Making the transition from Si

In M. D. P. Emilio & N. Dahad (Eds.), Aspencore guide to Silicon carbide (pp. 24–28).

High Voltage Output Characteristics and Short Circuit Robustness of HV SiC MOSFETs

Paralleling of Four 650V/60A GaN HEMTs for High Power Traction Drive Applications

Performance Comparison and Demonstration of 3-L Voltage Source Inverters Using 3.3 kV SiC MOSFETs for 2.3 kV High Speed Induction Motor Drive Applications

Kumar, A., Bhattacharya, S., Baliga, J., & Veliadis, V. (2021, June 14). 2021 THIRTY-SIXTH ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION (APEC 2021), pp. 1103–1110.

Performance Evaluation of 10 kV SiC Current Switch Based PWM Current Source Inverter for 4.16 kV Motor Drive Applications

Kumar, A., Bhattacharya, S., Baliga, J., & Veliadis, V. (2021, June 14). 2021 THIRTY-SIXTH ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION (APEC 2021), pp. 1219–1226.

Series Connection of 10 kV SiC Current Switches for PWM Current Source Converter Based High Power 7.2 kV Motor Drive Applications

Short Circuit Behavior of Series-Connected 10 kV SiC MOSFETs

SiC Mass Commercialization: Present Status and Barriers

7th International Forum on Wide Bandgap Semiconductors & The 18th China International Forum on Solid State Lighting (IFWS & SSLCHINA 2021). Presented at the 7th International Forum on Wide Bandgap Semiconductors & The 18th China International Forum on Solid State Lighting, Shenzhen Convention & Exhibition Center, Shenzhen, China.

SiC Power Technology Status and Barriers to Mass Commercialization

PowerUp conference proceedings. Presented at the PowerUp conference.

Accelerating Commercialization of SiC Power Electronics

Comprehensive Loss Analysis of Two-level and Three-Level Inverter for Electric Vehicle Using Drive Cycle Models

Control of Parallel Connected Interleaved Neutral Point Clamped Inverters for Electric Vehicle Drives

Nano avalanche photodiode architecture for photon detection

(Patent No. US10629767B2).

Plasma Etching of Silicon Carbide

In K. Zekentes & K. Vasilevskiy (Eds.), Advancing Silicon Carbide Electronics Technology II: Core Technologies of Silicon Carbide Device Processing (pp. 175–232). Materials Research Foundation.

Accelerating Commercialization of Wide-Bandgap Power Electronics

International Conference on Compound Semiconductor Manufacturing Technology. Presented at the International Conference on Compound Semiconductor Manufacturing Technology, Minneapolis MN.

An Experimental Study of Short Circuit Behavior and Protection of 15 kV SiC IGBTs

Avalanche Ruggedness Characterization of 10 kV 4H-SiC MOSFETs

Materials Science Forum, 963, 773–776.

Demonstration of New Generation 10kV SiC MOSFET Modules in Medium Voltage Power Converters

Empowering power electronics with PowerAmerica

Veliadis, V. (2019, November). Compound Semiconductor Magazine, 25(8), 22–27.

Nano avalanche photodiode architecture for photon detection

(Patent No. US10211359B2).

Single Shot Avalanche Characterization of Series and Parallel Connection of SiC Power MOSFETs

The Impact of Education in Accelerating Commercialization of Wide-Bandgap Power Electronics [Expert View]

IEEE Power Electronics Magazine, 6(2), 62–66.

The South Korean Silicon-Carbide Semiconductor Industry: An Emerging Powerhouse [Expert View]

Veliadis, V., & Kim, N. K. (2019, September 1). IEEE Power Electronics Magazine, Vol. 6, pp. 56–60.

Accelerating Commercialization of Wide-Bandgap Power Electronics [Expert View]

IEEE Power Electronics Magazine, 5(4), 63–65.

Avalanche Ruggedness Characterization of 10 kV 4H-SiC MOSFETs

11th International MOS-AK Workshop (co-located with the IEDM and CMC Meetings. Presented at the 11th International MOS-AK Workshop (co-located with the IEDM and CMC Meetings, Silicon Valley.

Avalanche Ruggedness Characterization of 10 kV 4H-SiC MOSFETs

European Conference on SiC and Related Materials. Presented at the European Conference on SiC and Related Materials, Birmingham, UK.

IEEE ITRW Working Group Position Paper-Materials and Devices: WBG and UWBG Materials and Devices Are Examined in a New Working Group

Veliadis, V., Kaplar, R., Zhang, J., Bakowski, M., Khalil, S., & Moens, P. (2018, June 1). IEEE Power Electronics Magazine, Vol. 5, pp. 45–48.

IEEE ITRW Working Group Position Paper-System Integration and Application: Silicon Carbide: A Roadmap for Silicon Carbide Adoption in Power Conversion Applications

IEEE Power Electronics Magazine, 5(2), 40–44.

Impact of Basal Plane Dislocations and Ruggedness of 10 kV 4H-SiC Transistors

International Forum on Wide Bandgap Semiconductors China (IFWS). Presented at the International Forum on Wide Bandgap Semiconductors China, Shenzhen, China.

Monolithic bi-directional current conducting device and method of fabricating the same

(Patent No. US9960159B2).

Ruggedness of 6.5kV, 30A 4H-SiC MOSFETs in Extreme Transient Conditions

2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD). Presented at the IEEE 30th International Symposium on Power Semiconductor Devices and ICs.

Current Status and Future Perspectives of SiC Power Devices

International Forum on Wide Bandgap Semiconductors China (IFWS). Presented at the International Forum on Wide Bandgap Semiconductors China, Beijing, China.

Effect of capacitive current on reverse recovery of body diode of 10kV SiC MOSFETs and external 10kV SiC JBS diodes

Nano avalanche photodiode architecture for photon detection

(Patent No. US10211359B2).

SiC power device design and fabrication, and insertion in novel MV power converters

2017 ieee energy conversion congress and exposition (ecce).

SiC power device design and fabrication, and insertion in novel MV power converters

2017 ieee energy conversion congress and exposition (ecce).

Strategic Guidance to Accelerate Large-scale Adoption of Wide Bandgap Power Semiconductors

Applied Power Electronics Conference and Exposition (APEC). Presented at the Applied Power Electronics Conference and Exposition.

6.9-cm²Active-Area Interconnected Wafer 4-kV p-i-n Diode Pulsed at 55 kA

IEEE Journal of Emerging and Selected Topics in Power Electronics, 4(3), 767–771.

Monolithic bi-directional current conducting device and method of fabricating the same

(Patent No. US9293465B1).

PowerAmerica efforts to Accelerate Large-scale Adoption of SiC and GaN Semiconductor Devices in Power Electronics Systems

Government Microcircuits Applications & Critical Technology Conference. Presented at the Government Microcircuits Applications & Critical Technology Conference.

Suitability of N-ON Recessed Implanted Gate Vertical-Channel SiC JFETs for Optically Triggered 1200 V Solid-State Circuit Breakers

IEEE Journal of Emerging and Selected Topics in Power Electronics, 4(3), 874–879.

6.9-cm2 Active-area Interconnected-Wafer SiC 4 kV PiN Diode Pulsed at 55 kA

3rd IEEE Workshop on Wide Bandgap Power Devices and Applications. Presented at the 3rd IEEE Workshop on Wide Bandgap Power Devices and Applications.

Suitability of N-ON recessed implanted gate vertical-channel SiC JFETs for optically triggered 1200 V solid-state-circuit-breakers

System and Method for Providing Optically Triggered Circuit Breaker

(Patent No. US8958193B2).

Evaluation of SiC JFET Performance During Repetitive Pulsed Switching Into an Unclamped Inductive Load

IEEE Transactions on Plasma Science, 42(10), 2968–2973.

Semiconductor devices with minimized current flow differences and methods of same

(Patent No. US8664048B2).

Silicon Carbide Junction Field‐Effect Transistors (SiCJFETs)

In Wiley Encyclopedia of Electrical and Electronics Engineering (pp. 1–37).

A 7.3 THz Cut-Off Frequency, Inline, Chalcogenide Phase-Change RF Switch Using an Independent Resistive Heater for Thermal Actuation

2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), 1–4.

A Four-Terminal, Inline, Chalcogenide Phase-Change RF Switch Using an Independent Resistive Heater for Thermal Actuation

IEEE Electron Device Letters, 34(10), 1313–1315.

High Temperature Unclamped Inductive Switching Mode Evaluation of SiC JFET

IEEE Electron Device Letters, 34(4), 526–528.

Process Tolerant Single Photolithography/Implantation 120-Zone Junction Termination Extension

Materials Science Forum, 740-742, 855–858.

Reliable Operation of SiC JFET Subjected to Over 2.4 Million 1200-V/115-A Hard Switching Events at 150 $^{\circ}\hbox{C}$

IEEE Electron Device Letters, 34(3), 384–386.

Reliable Operation of SiC Junction-Field-Effect-Transistor Subjected to over 2 Million 600-V Hard Switch Stressing Events

Materials Science Forum, 740-742, 921–924.

11.72 cm2 SiC Wafer-scale Interconnected 64 kA PiN Diode

Compound Semiconductor Manufacturing Technology Conference. Presented at the Compound Semiconductor Manufacturing Technology Conference, Boston, Massachusetts, USA.

11.72 cm² SiC Wafer-Scale Interconnected 1.8 kV / 64 kA PiN Diode

Materials Science Forum, 717-720, 961–964.

11.72-$\hbox{cm}^{2}$ Active-Area Wafer-Interconnected p-i-n Diode Pulsed at 64 kA Dissipates 382 J and Exhibits an Action of 1.7 $\hbox{MA}^{2}\cdot\hbox{s}$

IEEE Electron Device Letters, 33(6), 764–766.

Avalanche Breakdown Energy in Silicon Carbide Junction Field Effect Transistors

Materials Science Forum, 717-720, 1025–1028.

Bipolar Junction Transistor trenched multiple floating guard ring edge termination and method of fabricating the same

(Patent No. US 8,283,749).

Bipolar Junction Transistor trenched multiple floating guard ring edge termination and method of fabricating the same

(Patent No. US 8,105,911).

Degradation and Full Recovery in High-Voltage Implanted-Gate SiC JFETs Subjected to Bipolar Current Stress

IEEE Electron Device Letters, 33(7), 952–954.

Guard ring structures and method of fabricating thereof

(Patent No. US 8,138,569).

High-Yield 4H-SiC Thyristors for Wafer-Scale Interconnection

Materials Science Forum, 717-720, 1171–1174.

Process Tolerant Single Photolithography/Implantation 120-Zone Junction Termination Extension

European Conference on SiC and Related Materials. Presented at the European Conference on SiC and Related Materials, Russia.

Recovery of Bipolar-Current Induced Degradations in High-Voltage Implanted-Gate Junction Field Effect Transistors

Materials Science Forum, 717-720, 1013–1016.

Reliable Operation of 1200-V SiC Vertical Junction-Field-Effect-Transistor Subjected to 16,000-Pulse Hard Switching Stressing

Materials Science Forum, 717-720, 1021–1024.

Reliable Operation of SiC Junction-Field-Effect-Transistor Subjected to Over 2 Million 600-V Hard Switch Stressing Events

European Conference on SiC and Related Materials. Presented at the European Conference on SiC and Related Materials, Russia.

SiC Avalanche Photodiode with Improved Edge Termination

(Patent No. US 8,106,422).

Single Photolithography/Implantation 120-Zone Junction Termination Extension for High-Voltage SiC Devices

Materials Science Forum, 717-720, 977–980.

System and method for providing symmetric, efficient bi-directional power flow and power conditioning

(Patent No. US 8,130,023).

Systems and methods for interconnect metallization using a stop-etch layer

(Patent No. 8,110,880 B1).

Systems and methods for maximizing breakdown voltage in semiconductor devices

(Patent No. US 8,110,494 B1).

11.72 cm2 SiC Wafer-scale Interconnected 1.8 kV / 64 kA PiN Diode

International Conference on Silicon Carbide and Related Materials. Presented at the International Conference on Silicon Carbide and Related Materials.

600-V Symmetrical Bi-Directional Power Switching Using SiC Vertical-Channel JFETs with Reliable Edge Termination

Materials Science Forum, 679-680, 591–594.

Analysis of SiC JFET devices during pulsed operation

2011 IEEE Pulsed Power Conference, 1102–1104.

Avalanche Breakdown Energy in Silicon Carbide Junction Field Effect Transistors

International Conference on Silicon Carbide and Related Materials. Presented at the International Conference on Silicon Carbide and Related Materials.

Demonstration of a 600-V, 60-A, bidirectional silicon carbide solid-state circuit breaker

Design and Yield of 9 kV Unipolar Normally-ON Vertical-Channel SiC JFETs

Materials Science Forum, 679-680, 617–620.

Guard ring structures and method of fabricating thereof

(Patent No. US 8,018,022 B2).

Hard-Switch Reliability Testing of SiC JFETs for Bidirectional Solid-state Circuit Breaker Applications

NGES Symposium 2011. Presented at the NGES Symposium.