Dr. Victor Veliadis is Executive Director & CTO of PowerAmerica, a member-driven Manufacturing USA Institute of industry, universities, and national labs accelerating the commercialization of energy efficient silicon carbide and gallium nitride power semiconductor chips and electronics. At PowerAmerica, he has managed a budget of $156 million that he strategically allocated to over 210 industrial and University projects to catalyze SiC and GaN semiconductor and power electronics manufacturing, workforce development, and job creation. His PowerAmerica educational activities have trained 430 full-time University students in collaborative industry/University WBG projects, and engaged over 7000 attendees in tutorials, short courses, and webinars. In 2023, Dr. Veliadis won a $64M U.S. Department of Energy PowerAmerica renewal to further catalyze WBG power technologies. He is also PI of the $5 million NIST “Building pandemic resilience in Native American communities'' electrification and emergency management project. Dr. Veliadis is an ECE Professor at NC State University, and an IEEE Fellow and EDS Distinguished Lecturer. He has 27 issued U.S. patents, 12 book chapters, and 163 peer-reviewed publications to his credit. He is a sought-after speaker with over 180 keynote/tutorial/invited presentations including keynotes at ICSCRM, APEC, ECCE, ECPE, IFWS, and WiPDA. Prior to entering academia and taking an executive position at Power America in 2016, Dr. Veliadis spent 21 years post-PhD in the semiconductor industry where his work included design, fabrication, and testing of SiC devices, GaN devices for military radar systems, and financial and operations management of a commercial semiconductor fab. He has received military training in the Army Infantry and is a third-degree black belt in Shotokan karate. Dr. Veliadis has a Ph.D. degree in Electrical Engineering from John Hopkins University (1995).
Works (44)
2024 journal article
A SiC Based Two-Stage Pulsed Power Converter System for Laser Diode Driving and Other Pulsed Current Applications
IEEE Open Journal of Industry Applications, 5, 455–468.
open access via doi.org (publisher)
2024 article
Design of Asynchronous Microgrid Power Conditioning System with Gen-3 10 kV SiC MOSFETs for MV Grid Interconnection
2024 IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION, APEC, pp. 514–521.
2024 article
Experimental Study Based Switching Sequence for Reduction of Peak Voltage Transients in GaN-based 3L-ANPC Inverter
2024 IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION, APEC, pp. 1235–1241.
2024 chapter book
Manufacturing Processes
2024 chapter book
SiC Technology
2024 journal article
Switching Modes for Reduction of Peak Voltage Transients in GaN-Based Three Level ANPC Inverter
IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS, 60(6), 9066–9079.
2023 conference paper
A Feedforward-Based Harmonic Current Minimization Method for Six-Phase Permanent Magnet Synchronous Machine Drives
2023 IEEE Energy Conversion Congress and Exposition (ECCE), 5290–5296.
Event: 2023 IEEE Energy Conversion Congress and Exposition (ECCE)
2023 article proceedings
Comparative Study of PWM Modes for GaN-based Three-Level ANPC Inverter
Event: 2023 IEEE Energy Conversion Congress and Exposition (ECCE)
2023 article
Determination of Parameters of Symmetrical Six-Phase Permanent Magnet Synchronous Machines
2023 IEEE INTERNATIONAL ELECTRIC MACHINES & DRIVES CONFERENCE, IEMDC.
2023 journal article
Monolithic Bidirectional WBG Switches Rekindle Power Electronics Technology [Expert View]
IEEE POWER ELECTRONICS MAGAZINE, 10(1), 71–75.
2023 article proceedings
Operating Mode Analysis and Controller Design for Medium Voltage Asynchronous Microgrid Power Conditioning System
Event: 2023 IEEE Energy Conversion Congress and Exposition (ECCE)
2023 journal article
Overview of Wide/Ultrawide Bandgap Power Semiconductor Devices for Distributed Energy Resources
IEEE Journal of Emerging and Selected Topics in Power Electronics, 11(4), 3957–3982.
2023 article
Switching Loss Analysis of Three-Phase Three-Level Neutral Point Clamped Converter Pole Enabled by Series-Connected 10 kV SiC MOSFETs
2023 IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION, APEC, pp. 2353–2360.
2022 article
A New Switching Strategy for a GaN-based Three-Level Active Neutral Point Clamped Converter
2022 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE).
2022 article
A SiC based Two-Stage Pulsed Power Converter System for Laser Diode Driving Applications
2022 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE).
2022 article
Comparative Study of 6.5 kV 4H-SiC Discrete Packaged MOSFET, JBSFET, and Co-Pack (MOSFET and JBS Diode)
2022 IEEE 34TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD), pp. 249–252.
2022 article
Design Considerations of Multi-Phase Multilevel Inverters for High-Power Density Traction Drive Applications
2022 IEEE/AIAA TRANSPORTATION ELECTRIFICATION CONFERENCE AND ELECTRIC AIRCRAFT TECHNOLOGIES SYMPOSIUM (ITEC+EATS 2022), pp. 23–30.
2022 article proceedings
Design Considerations of a GaN-based Three-Level Traction Inverter for Electric Vehicles
Event: 2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA)
2022 article
Generalized Control Technique for Three-Level Inverter Fed Six-Phase Permanent Magnet Synchronous Machines Under Fault Conditions
2022 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE).
2022 journal article
SiC Mass Commercialization: Present Status and Barriers to Overcome
Materials Science Forum, 1062, 125–130.
2022 article proceedings
SiC Power Device Mass Commercialization
Event: ESSDERC 2022 - IEEE 52nd European Solid-State Device Research Conference (ESSDERC)
2021 article
Critical Design Considerations for Static and Dynamic Performances on 6.5 kV 4H-SiC MOSFETs Fabricated in a 6-inch SiC Foundry
2021 IEEE 8TH WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS (WIPDA), pp. 361–365.
2021 article proceedings
Design Considerations of Three Phase Active Front End Converter for 13.8 kV Asynchronous Microgrid Power Conditioning System enabled by Series Connection of Gen-3 10 kV SiC MOSFETs
Event: 2021 IEEE Energy Conversion Congress and Exposition (ECCE)
2021 article proceedings
High Voltage Output Characteristics and Short Circuit Robustness of HV SiC MOSFETs
Event: 2021 IEEE Energy Conversion Congress and Exposition (ECCE)
2021 article proceedings
Paralleling of Four 650V/60A GaN HEMTs for High Power Traction Drive Applications
Event: 2021 IEEE Energy Conversion Congress and Exposition (ECCE)
2021 article
Performance Comparison and Demonstration of 3-L Voltage Source Inverters Using 3.3 kV SiC MOSFETs for 2.3 kV High Speed Induction Motor Drive Applications
2021 THIRTY-SIXTH ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION (APEC 2021), pp. 1103–1110.
2021 article
Performance Evaluation of 10 kV SiC Current Switch Based PWM Current Source Inverter for 4.16 kV Motor Drive Applications
2021 THIRTY-SIXTH ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION (APEC 2021), pp. 1219–1226.
2021 article proceedings
Series Connection of 10 kV SiC Current Switches for PWM Current Source Converter Based High Power 7.2 kV Motor Drive Applications
Event: 2021 23rd European Conference on Power Electronics and Applications (EPE'21 ECCE Europe)
2021 article proceedings
Short Circuit Behavior of Series-Connected 10 kV SiC MOSFETs
Event: 2021 23rd European Conference on Power Electronics and Applications (EPE'21 ECCE Europe)
2020 article proceedings
Accelerating Commercialization of SiC Power Electronics
Event: 2020 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA)
2020 article proceedings
Comprehensive Loss Analysis of Two-level and Three-Level Inverter for Electric Vehicle Using Drive Cycle Models
Event: IECON 2020 - 46th Annual Conference of the IEEE Industrial Electronics Society
2020 article proceedings
Control of Parallel Connected Interleaved Neutral Point Clamped Inverters for Electric Vehicle Drives
Event: IECON 2020 - 46th Annual Conference of the IEEE Industrial Electronics Society
2019 article proceedings
An Experimental Study of Short Circuit Behavior and Protection of 15 kV SiC IGBTs
Contributors: A. Kumar n, S. Bhattacharya n , J. Baliga n & n
Event: 2019 IEEE 7th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)
2019 journal article
Avalanche Ruggedness Characterization of 10 kV 4H-SiC MOSFETs
Materials Science Forum, 963, 773–776.
Contributors: A. Kumar n, S. Parashar n, E. Brunt*, S. Sabri*, S. Ganguly*, S. Bhattacharya n , n
2019 article proceedings
Demonstration of New Generation 10kV SiC MOSFET Modules in Medium Voltage Power Converters
Contributors: S. Parashar n, A. Kumar n, V. Jakka n, S. Bhattacharya n & n
Event: 2019 IEEE 7th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)
2019 article proceedings
Single Shot Avalanche Characterization of Series and Parallel Connection of SiC Power MOSFETs
Contributors: A. Kumar n, R. Kokkonda n, S. Bhattacharya n & n
Event: 2019 IEEE 7th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)
2019 journal article
The Impact of Education in Accelerating Commercialization of Wide-Bandgap Power Electronics [Expert View]
IEEE Power Electronics Magazine, 6(2), 62–66.
2019 journal article
The South Korean Silicon-Carbide Semiconductor Industry: An Emerging Powerhouse
IEEE POWER ELECTRONICS MAGAZINE, 6(3), 56–60.
2018 journal article
Accelerating Commercialization of Wide-Bandgap Power Electronics [Expert View]
IEEE Power Electronics Magazine, 5(4), 63–65.
2018 journal article
IEEE ITRW Working Group Position Paper-Materials and Devices WBG and UWBG materials and devices are examined in a new working group
IEEE POWER ELECTRONICS MAGAZINE, 5(2), 45–48.
2018 journal article
IEEE ITRW Working Group Position Paper-System Integration and Application: Silicon Carbide: A Roadmap for Silicon Carbide Adoption in Power Conversion Applications
IEEE Power Electronics Magazine, 5(2), 40–44.
2017 conference paper
SiC power device design and fabrication, and insertion in novel MV power converters
2017 ieee energy conversion congress and exposition (ecce).
2017 conference paper
SiC power device design and fabrication, and insertion in novel MV power converters
2017 ieee energy conversion congress and exposition (ecce).
2016 journal article
6.9-cm<sup>2</sup>Active-Area Interconnected Wafer 4-kV p-i-n Diode Pulsed at 55 kA
IEEE Journal of Emerging and Selected Topics in Power Electronics, 4(3), 767–771.