Victor Veliadis

A SiC Based Two-Stage Pulsed Power Converter System for Laser Diode Driving and Other Pulsed Current Applications

IEEE Open Journal of Industry Applications, 5, 455–468.

Accelerating WBG Power Semiconductor Technology Commercialization

47th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe and 18th Expert Evaluation and Control of Compound Semiconductor Materials and Technologies (WOCSDICE-EXMATEC 2024). Presented at the 47th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe and 18th Expert Evaluation and Control of Compound Semiconductor Materials and Technologies (WOCSDICE-EXMATEC 2024), Heraklion Crete, Greece.

Design of Asynchronous Microgrid Power Conditioning System with Gen-3 10 kV SiC MOSFETs for MV Grid Interconnection

2024 IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION, APEC, pp. 514–521.

Experimental Study Based Switching Sequence for Reduction of Peak Voltage Transients in GaN-based 3L-ANPC Inverter

2024 IEEE Applied Power Electronics Conference and Exposition (APEC), 1235–1241.

Innovations and Advancements

In M. Di Paolo Emilio (Ed.), SiC Technology: Materials, Manufacturing, Devices and Design for Power Conversion (pp. 271–286).

Manufacturing Processes

Overview of Silicon Carbide

In M. Di Paolo Emilio (Ed.), SiC Technology: Materials, Manufacturing, Devices and Design for Power Conversion (pp. 1–23).

SiC Power Displacing silicon in several high-volume power applications

Semi Interface Magazine: Material Engineering and Interface Optimization, (1), 16–19.

SiC Technology

Switching Modes for Reduction of Peak Voltage Transients in GaN-Based Three Level ANPC Inverter

IEEE Transactions on Industry Applications, 60(6), 9066–9079.

A Feedforward-Based Harmonic Current Minimization Method for Six-Phase Permanent Magnet Synchronous Machine Drives

2023 IEEE Energy Conversion Congress and Exposition (ECCE), 5290–5296.

Barriers to SiC Power Semiconductor Device Commercialization

Pacific Rim Meeting on Electrochemical and Solid-State Science, 6–11,

Comparative Study of PWM Modes for GaN-based Three-Level ANPC Inverter

Determination of Parameters of Symmetrical Six-Phase Permanent Magnet Synchronous Machines

2023 IEEE INTERNATIONAL ELECTRIC MACHINES & DRIVES CONFERENCE, IEMDC.

Monolithic Bidirectional WBG Switches Rekindle Power Electronics Technology [Expert View]

IEEE POWER ELECTRONICS MAGAZINE, 10(1), 71–75.

Operating Mode Analysis and Controller Design for Medium Voltage Asynchronous Microgrid Power Conditioning System

Overview of Wide/Ultrawide Bandgap Power Semiconductor Devices for Distributed Energy Resources

IEEE Journal of Emerging and Selected Topics in Power Electronics, 11(4), 3957–3982.

SiC and GaN Power Devices

More-than-Moore Devices and Integration for Semiconductors, 47–104.

Switching Loss Analysis of Three-Phase Three-Level Neutral Point Clamped Converter Pole Enabled by Series-Connected 10 kV SiC MOSFETs

2023 IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION, APEC, pp. 2353–2360.

A New Switching Strategy for a GaN-based Three-Level Active Neutral Point Clamped Converter

2022 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE).

A SiC based Two-Stage Pulsed Power Converter System for Laser Diode Driving Applications

2022 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE).

Comparative Study of 6.5 kV 4H-SiC Discrete Packaged MOSFET, JBSFET, and Co-Pack (MOSFET and JBS Diode)

2022 IEEE 34TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD), pp. 249–252.

Design Considerations of Multi-Phase Multilevel Inverters for High-Power Density Traction Drive Applications

2022 IEEE/AIAA TRANSPORTATION ELECTRIFICATION CONFERENCE AND ELECTRIC AIRCRAFT TECHNOLOGIES SYMPOSIUM (ITEC+EATS 2022), pp. 23–30.

Design Considerations of a GaN-based Three-Level Traction Inverter for Electric Vehicles

Efficient SiC Power Devices Build on Silicon's Legacy

IEEE EE Times, (The next Silicon Frontier 50th Anniversary special edition), 73–76.

Generalized Control Technique for Three-Level Inverter Fed Six-Phase Permanent Magnet Synchronous Machines Under Fault Conditions

2022 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE).

Non-CMOS Compatible SiC Power Device Fabrication in Volume Si Fabs

PowerUp conference proceedings. Presented at the PowerUp conference.

SiC Mass Commercialization: Present Status and Barriers to Overcome

Materials Science Forum, 1062, 125–130.

SiC Power Device Mass Commercialization

SiC device manufacturing and road to volume production

International Conference on Compound Semiconductor Manufacturing Technology (CS MANTECH). Presented at the International Conference on Compound Semiconductor Manufacturing Technology (CS MANTECH), Monterey, CA, USA.

Critical Design Considerations for Static and Dynamic Performances on 6.5 kV 4H-SiC MOSFETs Fabricated in a 6-inch SiC Foundry

2021 IEEE 8TH WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS (WIPDA), pp. 361–365.

Design Considerations of Three Phase Active Front End Converter for 13.8 kV Asynchronous Microgrid Power Conditioning System enabled by Series Connection of Gen-3 10 kV SiC MOSFETs

High Voltage Output Characteristics and Short Circuit Robustness of HV SiC MOSFETs

Paralleling of Four 650V/60A GaN HEMTs for High Power Traction Drive Applications

Performance Comparison and Demonstration of 3-L Voltage Source Inverters Using 3.3 kV SiC MOSFETs for 2.3 kV High Speed Induction Motor Drive Applications

2021 THIRTY-SIXTH ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION (APEC 2021), pp. 1103–1110.

Performance Evaluation of 10 kV SiC Current Switch Based PWM Current Source Inverter for 4.16 kV Motor Drive Applications

2021 THIRTY-SIXTH ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION (APEC 2021), pp. 1219–1226.

Series Connection of 10 kV SiC Current Switches for PWM Current Source Converter Based High Power 7.2 kV Motor Drive Applications

Short Circuit Behavior of Series-Connected 10 kV SiC MOSFETs

Accelerating Commercialization of SiC Power Electronics

Comprehensive Loss Analysis of Two-level and Three-Level Inverter for Electric Vehicle Using Drive Cycle Models

Control of Parallel Connected Interleaved Neutral Point Clamped Inverters for Electric Vehicle Drives

Plasma Etching of Silicon Carbide

In K. Zekentes & K. Vasilevskiy (Eds.), Advancing Silicon Carbide Electronics Technology II: Core Technologies of Silicon Carbide Device Processing (pp. 175–232). Materials Research Foundation.

An Experimental Study of Short Circuit Behavior and Protection of 15 kV SiC IGBTs

Avalanche Ruggedness Characterization of 10 kV 4H-SiC MOSFETs

Materials Science Forum, 963, 773–776.

Demonstration of New Generation 10kV SiC MOSFET Modules in Medium Voltage Power Converters

Single Shot Avalanche Characterization of Series and Parallel Connection of SiC Power MOSFETs

The Impact of Education in Accelerating Commercialization of Wide-Bandgap Power Electronics [Expert View]

IEEE Power Electronics Magazine, 6(2), 62–66.

The South Korean Silicon-Carbide Semiconductor Industry: An Emerging Powerhouse

IEEE POWER ELECTRONICS MAGAZINE, 6(3), 56–60.

Accelerating Commercialization of Wide-Bandgap Power Electronics [Expert View]

IEEE Power Electronics Magazine, 5(4), 63–65.

IEEE ITRW Working Group Position Paper-Materials and Devices WBG and UWBG materials and devices are examined in a new working group

IEEE POWER ELECTRONICS MAGAZINE, 5(2), 45–48.

IEEE ITRW Working Group Position Paper-System Integration and Application: Silicon Carbide: A Roadmap for Silicon Carbide Adoption in Power Conversion Applications

IEEE Power Electronics Magazine, 5(2), 40–44.

Effect of capacitive current on reverse recovery of body diode of 10kV SiC MOSFETs and external 10kV SiC JBS diodes

2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2017, 2017-December, 208–212.

SiC power device design and fabrication, and insertion in novel MV power converters

2017 ieee energy conversion congress and exposition (ecce).

SiC power device design and fabrication, and insertion in novel MV power converters

2017 ieee energy conversion congress and exposition (ecce).

6.9-cm²Active-Area Interconnected Wafer 4-kV p-i-n Diode Pulsed at 55 kA

IEEE Journal of Emerging and Selected Topics in Power Electronics, 4(3), 767–771.

Suitability of N-ON Recessed Implanted Gate Vertical-Channel SiC JFETs for Optically Triggered 1200 V Solid-State Circuit Breakers

IEEE Journal of Emerging and Selected Topics in Power Electronics, 4(3), 874–879.

Suitability of N-ON recessed implanted gate vertical-channel SiC JFETs for optically triggered 1200 V solid-state-circuit-breakers

Evaluation of SiC JFET Performance During Repetitive Pulsed Switching Into an Unclamped Inductive Load

IEEE Transactions on Plasma Science, 42(10), 2968–2973.

Silicon Carbide Junction Field‐Effect Transistors (<scp>SiC</scp>JFETs)

In Wiley Encyclopedia of Electrical and Electronics Engineering (pp. 1–37).

A 7.3 THz Cut-Off Frequency, Inline, Chalcogenide Phase-Change RF Switch Using an Independent Resistive Heater for Thermal Actuation

2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), 1–4.

A Four-Terminal, Inline, Chalcogenide Phase-Change RF Switch Using an Independent Resistive Heater for Thermal Actuation

IEEE Electron Device Letters, 34(10), 1313–1315.

High Temperature Unclamped Inductive Switching Mode Evaluation of SiC JFET

IEEE Electron Device Letters, 34(4), 526–528.

Process Tolerant Single Photolithography/Implantation 120-Zone Junction Termination Extension

Materials Science Forum, 740-742, 855–858.

Reliable Operation of SiC JFET Subjected to Over 2.4 Million 1200-V/115-A Hard Switching Events at 150 $^{\circ}\hbox{C}$

IEEE Electron Device Letters, 34(3), 384–386.

Reliable Operation of SiC Junction-Field-Effect-Transistor Subjected to over 2 Million 600-V Hard Switch Stressing Events

Materials Science Forum, 740-742, 921–924.

11.72 cm² SiC Wafer-Scale Interconnected 1.8 kV / 64 kA PiN Diode

Materials Science Forum, 717-720, 961–964.

11.72-$\hbox{cm}^{2}$ Active-Area Wafer-Interconnected p-i-n Diode Pulsed at 64 kA Dissipates 382 J and Exhibits an Action of 1.7 $\hbox{MA}^{2}\cdot\hbox{s}$

IEEE Electron Device Letters, 33(6), 764–766.

Avalanche Breakdown Energy in Silicon Carbide Junction Field Effect Transistors

Materials Science Forum, 717-720, 1025–1028.

Degradation and Full Recovery in High-Voltage Implanted-Gate SiC JFETs Subjected to Bipolar Current Stress

IEEE Electron Device Letters, 33(7), 952–954.

Hard-Switch Stressing of Vertical-Channel Implanted-Gate SiC JFETs

IEEE Electron Device Letters, 33(1), 86–88.

High-Yield 4H-SiC Thyristors for Wafer-Scale Interconnection

Materials Science Forum, 717-720, 1171–1174.

Recovery of Bipolar-Current Induced Degradations in High-Voltage Implanted-Gate Junction Field Effect Transistors

Materials Science Forum, 717-720, 1013–1016.

Reliable Operation of 1200-V SiC Vertical Junction-Field-Effect-Transistor Subjected to 16,000-Pulse Hard Switching Stressing

Materials Science Forum, 717-720, 1021–1024.

Single Photolithography/Implantation 120-Zone Junction Termination Extension for High-Voltage SiC Devices

Materials Science Forum, 717-720, 977–980.

600-V Symmetrical Bi-Directional Power Switching Using SiC Vertical-Channel JFETs with Reliable Edge Termination

Materials Science Forum, 679-680, 591–594.

Analysis of SiC JFET devices during pulsed operation

2011 IEEE Pulsed Power Conference, 1102–1104.

Demonstration of a 600-V, 60-A, bidirectional silicon carbide solid-state circuit breaker

Design and Yield of 9 kV Unipolar Normally-ON Vertical-Channel SiC JFETs

Materials Science Forum, 679-680, 617–620.

PERFORMANCE OF A 600-V, 30-A, BI-DIRECTIONAL SILICON CARBIDE SOLID-STATE CIRCUIT BREAKER

International Journal of High Speed Electronics and Systems, 20(03), 433–439.

600-V / 2-A Symmetrical Bi-Directional Power Flow Using Vertical-Channel JFETs Connected in Common Source Configuration

Materials Science Forum, 645-648, 1147–1150.

A 9-kV Normally-on Vertical-Channel SiC JFET for Unipolar Operation

IEEE Electron Device Letters, 31(5), 470–472.

Comments on "1.88-$\hbox{m}\Omega \cdot \hbox{cm}^{2}$ 1650-V Normally on 4H-SiC TI-VJFET

IEEE Transactions on Electron Devices, 57(12), 3540–3543.

Feasibility of Efficient Power Switching Using Short-Channel 1200-V Normally-Off SiC VJFETs; Experimental Analysis and Simulations

Materials Science Forum, 645-648, 929–932.

1200 V SiC Vertical‐Channel‐JFETs and Cascode Switches

1200 V SiC vertical‐channel‐JFETs and cascode switches

Physica Status Solidi (a), 206(10), 2346–2362.

BI-DIRECTIONAL SCALABLE SOLID-STATE CIRCUIT BREAKERS FOR HYBRID-ELECTRIC VEHICLES

International Journal of High Speed Electronics and Systems, 19(01), 183–192.

Design and yields of 1200-V recessed-implanted-gate SiC vertical-channel JFETs for power switching applications

Effect of Bipolar Gate-to-Drain Current on the Electrical Properties of Vertical Junction Field Effect Transistors

Materials Science Forum, 615-617, 719–722.

Investigation of the Suitability of 1200-V Normally-Off Recessed-Implanted-Gate SiC VJFETs for Efficient Power-Switching Applications

IEEE Electron Device Letters, 30(7), 736–738.

VJFET Based All-SiC Normally-Off Cascode Switch for High Temperature Power Handling Applications

Materials Science Forum, 615-617, 711–714.

1200-V, 50-A, Silicon Carbide Vertical Junction Field Effect Transistors for Power Switching Applications

Materials Science Forum, 600-603, 1047–1050.

4H-SiC VJFET Based Normally-off Cascode Switches for 300°C Electronic Applications

SAE International Journal of Aerospace, 1(1), 973–981.

A 1680-V (at 1 $\hbox{mA/cm}^{2}$) 54-A (at 780 $\hbox{W/cm}^{2}$) Normally ON 4H-SiC JFET With 0.143- $\hbox{cm}^{2}$ Active Area

IEEE Electron Device Letters, 29(10), 1132–1134.

A 2055-V (at 0.7 $\hbox{mA/cm}^{2}$) 24-A (at 706 $\hbox{W/cm}^{2}$) Normally On 4H-SiC JFET With 6.8- $\hbox{mm}^{2}$ Active Area and Blocking-Voltage Capability Reaching the Material Limit

IEEE Electron Device Letters, 29(12), 1325–1327.

Large Area Silicon Carbide Vertical JFETs for 1200 V Cascode Switch Operation

International Journal of Power Management Electronics, 2008, 1–8.

Demonstration of High-Voltage SiC VJFET Cascode in a Half-Bridge Inverter

Materials Science Forum, 556-557, 979–982.

Exploring the design space of rugged seven lithographic level silicon carbide vertical JFETs for the development of 1200-V, 50-A devices

Presented at the 2007 International Semiconductor Device Research Symposium.

Large Area Silicon Carbide Vertical Junction Field Effect Transistors for High Temperature Power Conditioning Applications

Novel 1 kv, normally-off, vertically integrated, dual-gate VJFET power switch with a low 4.6 mωcm² on-state resistance

2007 65th Annual Device Research Conference, 29–30.

2.1 m&amp;#x03A9;-cm2, 1.6 kV 4H-Silicon Carbide VJFET for Power Applications

High Current [200 A], Low Resistance (0.87 m&#x03A9;-cm/sub 2/) Normally-off SiC VJFETs for Power Switching Applications

2005 International Semiconductor Device Research Symposium, 306–307.

Silicon Carbide JFET Cascode Switch for Power Conditioning Applications

A practical approach to wavelength selectable DWDM sources

LEOS 2001. 14th Annual Meeting of the IEEE Lasers and Electro-Optics Society (Cat. No.01CH37242), 1, 171–172.

SIZE VARIATION OF Tb-DOPED <font>Gd</font>₂<font>O</font>₃ NANOPARTICLES STUDIED BY X-RAY EXCITED LUMINESCENCE AND DIFFRACTION

Modern Physics Letters B, 15(06n07), 205–211.

Controlled agglomeration of Tb-doped Y2O3 nanocrystals studied by x-ray absorption fine structure, x-ray excited luminescence, and photoluminescence

Applied Physics Letters, 75(16), 2464–2466.

X-ray excited luminescence and local structures in Tb-doped Y2O3 nanocrystals

Journal of Applied Physics, 83(10), 5404–5409.

Engineering of the nonradiative transition rates in nonpolar modulation-doped multiple quantum wells

Journal of the Optical Society of America B, 14(5), 1043.

Evidence of strong sequential band filling at interface islands in asymmetric coupled quantum wells

Superlattices and Microstructures, 22(4), 497–503.

Engineering of the nonradiative transition rates in modulation-doped multiple-quantum wells

IEEE Journal of Quantum Electronics, 32(7), 1155–1160.