Klaus J Bachmann

Nanoscale GaN whiskers fabricated by photoelectrochemical etching

Grenko, J. A., Reynolds, C. L., Schlesser, R., Hren, J. J., Bachmann, K., Sitar, Z., & Kotula, P. G. (2004, October 28). Journal of Applied Physics.

Semiclassical Calculation of Reaction Rate Constants for Homolytical Dissociation Reactions of Interest in Organometallic Vapor-Phase Epitaxy (OMVPE)

Cardelino, B. H., Moore, C. E., Cardelino, C. A., McCall, S. D., Frazier, D. O., & Bachmann, K. J. (2003, April 18). The Journal of Physical Chemistry A.

Antiphase boundaries in GaP layers grown on (001) Si by chemical beam epitaxy

Narayanan, V., Mahajan, S., Bachmann, K. J., Woods, V., & Dietz, N. (2002, April 1). Acta Materialia.

Stacking faults and twins in gallium phosphide layers grown on silicon

Narayanan, V., Mahajan, S., Bachmann, K. J., Woods, V., & Dietz, N. (2002, March 1). Philosophical Magazine. A/Philosophical Magazine. A. Physics of Condensed Matter. Structure, Defects and Mechanical Properties.

Theoretical Study of Indium Compounds of Interest for Organometallic Chemical Vapor Deposition

Cardelino, B. H., Moore, C. E., Cardelino, C. A., Frazier, D. O., & Bachmann, K. J. (2001, January 17). The Journal of Physical Chemistry A.

Theoretical analysis of phase-matched second-harmonic generation and optical parametric oscillation in birefringent semiconductor waveguides

Dimmock, J. O., Madarasz, F. L., Dietz, N., & Bachmann, K. J. (2001, March 20). Applied Optics.

Erratum: “Sellmeier parameters for ZnGaP2 and GaP” [J. Appl. Phys. 87, 1564 (2000)]

Madarasz, F. L., Dimmock, J. O., Dietz, N., & Bachmann, K. J. (2000, May 15). Journal of Applied Physics.

Orientation mediated self-assembled gallium phosphide islands grown on silicon

Narayanan, V., Mahajan, S., Sukidi, N., Bachmann, K. J., Woods, V., & Dietz, N. (2000, March 1). Philosophical Magazine. A/Philosophical Magazine. A. Physics of Condensed Matter. Structure, Defects and Mechanical Properties.

Sellmeier parameters for ZnGaP2 and GaP

Madarasz, F. L., Dimmock, J. O., Dietz, N., & Bachmann, K. J. (2000, February 1). Journal of Applied Physics.

Initial Stages of Heteroepitaxy of GaP on Selected Silicon Surfaces

Sukidi, N., Bachmann, K. J., Narayanan, V., & Mahajan, S. (1999, March 1). Journal of The Electrochemical Society.

Optimal design of a high pressure organometallic chemical vapor deposition reactor

Bachmann, K. J., Banks, H. T., Höpfner, C., kepler, G. M., LeSure, S., McCall, S. D., & Scroggs, J. S. (1999, April 1). Mathematical and Computer Modelling.

Origins of defects in self assembled GaP islands grown on Si(001) and Si(111)

Narayanan, V., Sukidi, N., Bachmann, K. J., & Mahajan, S. (1999, December 1). Thin Solid Films.

Growth of gallium phosphide layers by chemical beam epitaxy on oxide patterned (001)silicon substrates

Narayanan, V., Sukidi, N., Hu, C., Dietz, N., Bachmann, K. J., Mahajan, S., & Shingubara, S. (1998, June 1). Materials Science and Engineering B.

Simulation of a vertical reactor for high pressure organometallic chemical vapor deposition

Kepler, G. M., Höpfner, C., Scroggs, J. S., & Bachmann, K. J. (1998, December 1). Materials Science and Engineering B.

<title>Heteroepitaxial processes at low and elevated pressures</title>

Bachmann, K. J., & Kepler, G. M. (1997, July 7). Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE.

Molecular layer epitaxy by real-time optical process monitoring

Bachmann, K. J., Höpfner, C., Sukidi, N., Miller, A. E., Harris, C., Aspnes, D. E., … Rossow, U. (1997, March 1). Applied Surface Science, Vol. 112, pp. 38–47.

Real-time monitoring of surface processes by p-polarized reflectance

Dietz, N., Sukidi, N., Harris, C., & Bachmann, K. J. (1997, May 1). Journal of Vacuum Science & Technology A Vacuum Surfaces and Films.

Methods for monitoring and controlling deposition and etching using p-polarized reflectance spectroscopy

Washington, DC: U.S. Patent and Trademark Office.

Multilevel Approaches Toward Monitoring and Control of Semiconductor Epitaxy

Aspnes, D. E., Dietz, N., Rossow, U., & Bachmann, K. J. (1996, January 1). MRS Proceedings, pp. 451–462.

The materials science of microelectronics

New York: VCH.