2003 journal article
Semiclassical calculation of reaction rate constants for homolytical dissociation reactions of interest in organometallic vapor-phase epitaxy (OMVPE)
Journal of Physical Chemistry. A, Molecules, Spectroscopy, Kinetics, Environment & General Theory, 107(19), 3708–3718.
2002 journal article
Stacking faults and twins in gallium phosphide layers grown on silicon
Philosophical Magazine. A, Physics of Condensed Matter, Defects and Mechanical Properties, 82(4), 685–698.
2001 journal article
Theoretical study of indium compounds of interest for organometallic chemical vapor deposition
Journal of Physical Chemistry. A, Molecules, Spectroscopy, Kinetics, Environment & General Theory, 105(5), 849–868.
2000 journal article
Orientation mediated self-assembled gallium phosphide islands grown on silicon
Philosophical Magazine. A, Physics of Condensed Matter, Defects and Mechanical Properties, 80(3), 555–572.
1998 journal article
Simulation of a vertical reactor for high pressure organometallic chemical vapor deposition
Materials Science & Engineering. B, Solid-State Materials for Advanced Technology, 57(1), 9–17.
1997 conference paper
Multilevel approaches toward monitoring and control of semiconductor epitaxy
Control of semiconductor surfaces and interfaces: Symposium held December 2-5, 1996, Boston, Massachusetts, U.S.A. (Materials Research Society Symposium proceedings, no. 448), 451–462.
Methods for monitoring and controlling deposition and etching using p-polarized reflectance spectroscopy
Washington, DC: U.S. Patent and Trademark Office.
The materials science of microelectronics
New York: VCH.