Klaus J Bachmann

Nanoscale GaN whiskers fabricated by photoelectrochemical etching

JOURNAL OF APPLIED PHYSICS, 96(9), 5185–5188.

Semiclassical calculation of reaction rate constants for homolytical dissociation reactions of interest in organometallic vapor-phase epitaxy (OMVPE)

JOURNAL OF PHYSICAL CHEMISTRY A, 107(19), 3708–3718.

Antiphase boundaries in GaP layers grown on (001) Si by chemical beam epitaxy

ACTA MATERIALIA, 50(6), 1275–1287.

Stacking faults and twins in gallium phosphide layers grown on silicon

PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 82(4), 685–698.

Theoretical analysis of phase-matched second-harmonic generation and optical parametric oscillation in birefringent semiconductor waveguides

APPLIED OPTICS, 40(9), 1438–1441.

Theoretical study of indium compounds of interest for organometallic chemical vapor deposition

JOURNAL OF PHYSICAL CHEMISTRY A, 105(5), 849–868.

Orientation mediated self-assembled gallium phosphide islands grown on silicon

PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 80(3), 555–572.

Sellmeier parameters for ZnGaP2 and GaP

JOURNAL OF APPLIED PHYSICS, 87(3), 1564–1565.

Sellmeier parameters for ZnGaP2 and GaP (vol 87, pg 1564, 2000)

Madarasz, F. L., Dimmock, J. O., Dietz, N., & Bachmann, K. J. (2000, May 15). JOURNAL OF APPLIED PHYSICS, Vol. 87, pp. 7597–7597.

Initial stages of heteroepitaxy of GaP on selected silicon surfaces

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(3), 1147–1150.

Optimal design of a high pressure organometallic chemical vapor deposition reactor

MATHEMATICAL AND COMPUTER MODELLING, 29(8), 65–80.

Origins of defects in self assembled GaP islands grown on Si(001) and Si(111)

Narayanan, V., Sukidi, N., Bachmann, K. J., & Mahajan, S. (1999, December 1). THIN SOLID FILMS, Vol. 357, pp. 53–56.

Growth of gallium phosphide layers by chemical beam epitaxy on oxide patterned (001)silicon substrates

Narayanan, V., Sukidi, N., Hu, C. M., Dietz, N., Bachmann, K. J., Mahajan, S., & Shingubara, S. (1998, June 26).

Simulation of a vertical reactor for high pressure organometallic chemical vapor deposition

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 57(1), 9–17.

Heteroepitaxial processes at low and elevated pressures

MATERIALS RESEARCH IN LOW GRAVITY, Vol. 3123, pp. 64–74.

Molecular layer epitaxy by real-time optical process monitoring

Applied Surface Science, 112(1997 Mar.), 38–47.

Real-time monitoring of surface processes by p-polarized reflectance

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, Vol. 15, pp. 807–815.

Methods for monitoring and controlling deposition and etching using p-polarized reflectance spectroscopy

Washington, DC: U.S. Patent and Trademark Office.

Multilevel approaches toward monitoring and control of semiconductor epitaxy

Control of semiconductor surfaces and interfaces: Symposium held December 2-5, 1996, Boston, Massachusetts, U.S.A. (Materials Research Society Symposium proceedings, no. 448), 451–462.

The materials science of microelectronics

New York: VCH.