Klaus Bachmann

Grenko, J. A., Reynolds, C. L., Schlesser, R., Hren, J. J., Bachmann, K., Sitar, Z., & Kotula, P. G. (2004). Nanoscale GaN whiskers fabricated by photoelectrochemical etching. JOURNAL OF APPLIED PHYSICS, 96(9), 5185–5188. https://doi.org/10.1063/1.1788841

Cardelino, B. H., Moore, C. E., Cardelino, C. A., McCall, S. D., Frazier, D. O., & Bachmann, K. J. (2003). Semiclassical calculation of reaction rate constants for homolytical dissociation reactions of interest in organometallic vapor-phase epitaxy (OMVPE). JOURNAL OF PHYSICAL CHEMISTRY A, 107(19), 3708–3718. https://doi.org/10.1021/jp026289j

Narayanan, V., Mahajan, S., Bachmann, K. J., Woods, V., & Dietz, N. (2002). Antiphase boundaries in GaP layers grown on (001) Si by chemical beam epitaxy. ACTA MATERIALIA, 50(6), 1275–1287. https://doi.org/10.1016/S1359-6454(01)00408-6

Narayanan, V., Mahajan, S., Bachmann, K. J., Woods, V., & Dietz, N. (2002). Stacking faults and twins in gallium phosphide layers grown on silicon. PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 82(4), 685–698. https://doi.org/10.1080/01418610110082034

Dimmock, J. O., Madarasz, F. L., Dietz, N., & Bachmann, K. J. (2001). Theoretical analysis of phase-matched second-harmonic generation and optical parametric oscillation in birefringent semiconductor waveguides. APPLIED OPTICS, 40(9), 1438–1441. https://doi.org/10.1364/AO.40.001438

Cardelino, B. H., Moore, C. E., Cardelino, C. A., Frazier, D. O., & Bachmann, K. J. (2001). Theoretical study of indium compounds of interest for organometallic chemical vapor deposition. JOURNAL OF PHYSICAL CHEMISTRY A, 105(5), 849–868. https://doi.org/10.1021/jp0013558

Narayanan, V., Mahajan, S., Sukidi, N., Bachmann, K. J., Woods, V., & Dietz, N. (2000). Orientation mediated self-assembled gallium phosphide islands grown on silicon. PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 80(3), 555–572. https://doi.org/10.1080/01418610008212068

Madarasz, F. L., Dimmock, J. O., Dietz, N., & Bachmann, K. J. (2000). Sellmeier parameters for ZnGaP2 and GaP. JOURNAL OF APPLIED PHYSICS, 87(3), 1564–1565. https://doi.org/10.1063/1.372050

Madarasz, F. L., Dimmock, J. O., Dietz, N., & Bachmann, K. J. (2000, May 15). Sellmeier parameters for ZnGaP2 and GaP (vol 87, pg 1564, 2000). JOURNAL OF APPLIED PHYSICS, Vol. 87, pp. 7597–7597. https://doi.org/10.1063/1.373029

Sukidi, N., Bachmann, K. J., Narayanan, V., & Mahajan, S. (1999). Initial stages of heteroepitaxy of GaP on selected silicon surfaces. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(3), 1147–1150. https://doi.org/10.1149/1.1391736

Bachmann, K. J., Banks, H. T., Hopfner, C., Kepler, G. M., LeSure, S., McCall, S. D., & Scroggs, J. S. (1999). Optimal design of a high pressure organometallic chemical vapor deposition reactor. MATHEMATICAL AND COMPUTER MODELLING, 29(8), 65–80. https://doi.org/10.1016/S0895-7177(99)00071-0

Narayanan, V., Sukidi, N., Bachmann, K. J., & Mahajan, S. (1999, December 1). Origins of defects in self assembled GaP islands grown on Si(001) and Si(111). THIN SOLID FILMS, Vol. 357, pp. 53–56. https://doi.org/10.1016/S0040-6090(99)00474-5

Narayanan, V., Sukidi, N., Hu, C. M., Dietz, N., Bachmann, K. J., Mahajan, S., & Shingubara, S. (1998, June 26). Growth of gallium phosphide layers by chemical beam epitaxy on oxide patterned (001)silicon substrates. https://doi.org/10.1016/s0921-5107(98)00169-x

Kepler, G. M., Hopfner, C., Scroggs, J. S., & Bachmann, K. J. (1998). Simulation of a vertical reactor for high pressure organometallic chemical vapor deposition. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 57(1), 9–17. https://doi.org/10.1016/s0921-5107(98)00256-6

Backmann, K. J., & Kepler, G. M. (1997). Heteroepitaxial processes at low and elevated pressures. MATERIALS RESEARCH IN LOW GRAVITY, Vol. 3123, pp. 64–74. https://doi.org/10.1117/12.277707

Bachmann, K. J., Hopfner, C., Sukidi, N., Miller, A. E., Harris, C. J., Aspnes, D. E., … Banks, H. T. (1997). Molecular layer epitaxy by real-time optical process monitoring. Applied Surface Science, 112(1997 Mar.), 38–47. https://doi.org/10.1016/S0169-4332(96)00975-0

Aspnes, D. E., Dietz, N., Rossow, U., & Bachmann, K. J. (1997). Multilevel approaches toward monitoring and control of semiconductor epitaxy. Control of semiconductor surfaces and interfaces: Symposium held December 2-5, 1996, Boston, Massachusetts, U.S.A. (Materials Research Society Symposium proceedings, no. 448), 451–462. https://doi.org/10.1557/proc-448-451

Dietz, N., Sukidi, N., Harris, C., & Bachmann, K. J. (1997). Real-time monitoring of surface processes by p-polarized reflectance. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, Vol. 15, pp. 807–815. https://doi.org/10.1116/1.580712

Bachmann, K. J., Dietz, N., & Miller, A. E. (1996). Methods for monitoring and controlling deposition and etching using p-polarized reflectance spectroscopy. Washington, DC: U.S. Patent and Trademark Office.

Bachmann, K. J. (1995). The materials science of microelectronics. New York: VCH.