2010 journal article

Behavior of strain at a thin Ge pile-up layer formed by dry oxidation of a Si0.7Ge0.3 film

Thin Solid Films, 518(8), 2065–2069.

By: B. Min, J. Yoo, H. Sohn, D. Ko, M. Cho, K. Chung, T. Lee

Source: NC State University Libraries
Added: August 6, 2018

2009 conference paper

Application of non-linear optical second harmonic generation and X-ray absorption and spectroscopies to defect related properties of Hf silicate and Hf Si oxynitride gate dielectrics

Microelectronic Engineering, 86(7-9), 1654–1657.

By: K. Gundogdu, G. Lucovsky, K. Chung, J. Kim & D. Nordlund

Source: NC State University Libraries
Added: August 6, 2018

2009 journal article

Changes in the structure of an atomic-layer-deposited HfO2 film on a GaAs (100) substrate as a function of postannealing temperature

Applied Physics Letters, 95(4).

By: C. Kim, S. Cho, M. Cho, K. Chung, D. Suh, D. Ko, C. An, H. Kim, H. Lee

Source: NC State University Libraries
Added: August 6, 2018

2009 journal article

Extrinsic interface formation of HfO2 and Al2O3/GeOx gate stacks on Ge (100) substrates

Journal of Applied Physics, 106(4).

By: H. Seo, F. Bellenger, K. Chung, M. Houssa, M. Meuris, M. Heyns, G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

2009 journal article

Instability of incorporated nitrogen in HfO2 films grown on strained Si0.7Ge0.3 layers

Applied Physics Letters, 94(4).

By: K. Chung, G. Lucovsky, W. Lee, M. Cho & H. Jeon

Source: NC State University Libraries
Added: August 6, 2018

2009 journal article

Nucleation behavior of atomic layer deposited SiO2 for Hf-silicate films

Journal of the Electrochemical Society, 156(5), G43–47.

By: K. Chung, W. Lee, C. Kim, M. Cho & D. Moon

Source: NC State University Libraries
Added: August 6, 2018

2009 journal article

Preparation of native oxide and carbon-minimized Ge surface by NH4OH-based cleaning for high-k/Ge MOS gate stacks

Journal of the Electrochemical Society, 156(11), H813–817.

By: H. Seo, K. Chung, J. Long & G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

2009 conference paper

Spectroscopic differentiation between O-atom vacancy and divacancy defects, respectively, in TiO2 and HfO2 by X-ray absorption spectroscopy

Microelectronic Engineering, 86(7-9), 1676–1679.

By: G. Lucovsky, K. Chung, J. Kim & D. Norlund

Source: NC State University Libraries
Added: August 6, 2018

2009 journal article

Study of hafnium silicate treated with NO gas annealing

Journal of the Korean Physical Society, 54(2), 637–642.

By: D. Suh, D. Ko, M. Cho & K. Chung

Source: NC State University Libraries
Added: August 6, 2018

2009 journal article

The effect of NH3 on the interface of HfO2 and Al2O3 films on GaAs(100) surfaces

Electrochemical and Solid State Letters, 12(10), H376–377.

By: D. Suh, Y. Cho, Y. Lee, D. Ko, K. Chung & M. Cho

Source: NC State University Libraries
Added: August 6, 2018

2008 journal article

Change in the interfacial reaction of Hf-silicate film as a function of thickness and stoichiometry

Journal of Chemical Physics, 129(3).

By: M. Cho, C. Kim, K. Moon, K. Chung, C. Yim, D. Ko, H. Sohn, H. Jeon

Source: NC State University Libraries
Added: August 6, 2018

2008 journal article

Effects of reoxidation on band alignment in N-incorporated SiON films as a function of sequential thermal annealing in NO and NH3

Applied Physics Letters, 93(1).

By: W. Lee, M. Cho, K. Chung, Y. Lee, D. Kim, S. Choi, U. Chung, J. Moon

Source: NC State University Libraries
Added: August 6, 2018

2008 journal article

Interfacial reaction of atomic-layer-deposited HfO2 film as a function of the surface state of an n-GaAs (100) substrate

Applied Physics Letters, 93(19).

By: C. Kim, S. Cho, M. Cho, K. Chung, C. An, H. Kim, H. Lee, D. Ko

Source: NC State University Libraries
Added: August 6, 2018

2008 journal article

Suppression of defect states in HfSiON gate dielectric films on n-type Ge(100) substrates

Applied Physics Letters, 93(18).

By: K. Chung, H. Seo, J. Long & G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

2008 journal article

Thermal annealing effects on the atomic layer deposited LaAlO3 thin films on Si substrate

Electrochemical and Solid State Letters, 11(7), G33–36.

By: D. Eom, C. Hwang, H. Kim, M. Cho & K. Chung

Source: NC State University Libraries
Added: August 6, 2018