2010 journal article

Behavior of strain at a thin Ge pile-up layer formed by dry oxidation of a Si0.7Ge0.3 film

THIN SOLID FILMS, 518(8), 2065–2069.

By: B. Min*, J. Yoo*, H. Sohn*, D. Ko*, M. Cho*, K. Chung n, T. Lee*

co-author countries: Korea (Republic of) 🇰🇷
author keywords: Si1-xGex; Oxidation; Ge pile-up layer; Relaxation; Medium energy ion scattering; Strain
Source: Web Of Science
Added: August 6, 2018

2009 article

Application of non-linear optical second harmonic generation and X-ray absorption and spectroscopies to defect related properties of Hf silicate and Hf Si oxynitride gate dielectrics

MICROELECTRONIC ENGINEERING, Vol. 86, pp. 1654–1657.

By: K. Gundogdu n, G. Lucovsky n, K. Chung n, J. Kim n & D. Nordlund*

author keywords: Hf oxide based dielectrics; Phase separated Hf silicates; Hf Si oxynitrides; Non-linear optical second harmonic generation; X-ray absorption spectroscopy; Vacancy defects; Elimination of macroscopic strain
Sources: Web Of Science, ORCID
Added: August 6, 2018

2009 journal article

Changes in the structure of an atomic-layer-deposited HfO2 film on a GaAs (100) substrate as a function of postannealing temperature

APPLIED PHYSICS LETTERS, 95(4).

By: C. Kim*, S. Cho*, M. Cho*, K. Chung n, D. Suh*, D. Ko*, C. An*, H. Kim*, H. Lee*

co-author countries: Korea (Republic of) 🇰🇷
author keywords: atomic layer deposition; crystal structure; energy gap; hafnium compounds; high-k dielectric thin films; rapid thermal annealing; stoichiometry; surface chemistry
Source: Web Of Science
Added: August 6, 2018

2009 journal article

Extrinsic interface formation of HfO2 and Al2O3/GeOx gate stacks on Ge (100) substrates

JOURNAL OF APPLIED PHYSICS, 106(4).

By: H. Seo*, F. Bellenger*, K. Chung n, M. Houssa*, M. Meuris*, M. Heyns*, G. Lucovsky n

co-author countries: Belgium 🇧🇪
Source: Web Of Science
Added: August 6, 2018

2009 journal article

Instability of incorporated nitrogen in HfO2 films grown on strained Si0.7Ge0.3 layers

APPLIED PHYSICS LETTERS, 94(4).

By: K. Chung n, G. Lucovsky n, W. Lee*, M. Cho* & H. Jeon*

co-author countries: Korea (Republic of) 🇰🇷
author keywords: annealing; chemical interdiffusion; Ge-Si alloys; hafnium compounds; high-k dielectric thin films; ion-surface impact; nitrogen; surface chemistry; thermal stability; XANES; X-ray photoelectron spectra
Source: Web Of Science
Added: August 6, 2018

2009 journal article

Nucleation Behavior of Atomic Layer Deposited SiO2 for Hf-Silicate Films

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 156(5), G43–G47.

By: K. Chung n, W. Lee*, C. Kim*, M. Cho* & D. Moon*

co-author countries: Korea (Republic of) 🇰🇷
Source: Web Of Science
Added: August 6, 2018

2009 journal article

Preparation of Native Oxide and Carbon-Minimized Ge Surface by NH4OH-Based Cleaning for High-k/Ge MOS Gate Stacks

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 156(11), H813–H817.

By: H. Seo*, K. Chung n, J. Long n & G. Lucovsky n

Source: Web Of Science
Added: August 6, 2018

2009 article

Spectroscopic differentiation between O-atom vacancy and divacancy defects, respectively, in TiO2 and HfO2 by X-ray absorption spectroscopy

MICROELECTRONIC ENGINEERING, Vol. 86, pp. 1676–1679.

By: G. Lucovsky n, K. Chung n, J. Kim n & D. Norlund*

author keywords: Monovacancies; Divacancies; X-ray absorption spectroscopy; Pre-edge regime; Bound resonance states; Immobile and mobile vacancies
Source: Web Of Science
Added: August 6, 2018

2009 journal article

Study of Hafnium Silicate Treated with NO Gas Annealing

JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 54(2), 637–642.

By: D. Suh, D. Ko, M. Cho & K. Chung*

author keywords: High-k; Hafnium silicate; Atomic Layer Deposition
Source: Web Of Science
Added: August 6, 2018

2009 journal article

The Effect of NH3 on the Interface of HfO2 and Al2O3 Films on GaAs(100) Surfaces

ELECTROCHEMICAL AND SOLID STATE LETTERS, 12(10), H376–H377.

By: D. Suh, Y. Cho, Y. Lee, D. Ko, K. Chung n & M. Cho*

co-author countries: Korea (Republic of) 🇰🇷
Source: Web Of Science
Added: August 6, 2018

2008 journal article

Change in the interfacial reaction of Hf-silicate film as a function of thickness and stoichiometry

JOURNAL OF CHEMICAL PHYSICS, 129(3).

By: M. Cho*, C. Kim*, K. Moon*, K. Chung n, C. Yim*, D. Ko*, H. Sohn*, H. Jeon*

co-author countries: Korea (Republic of) 🇰🇷
Source: Web Of Science
Added: August 6, 2018

2008 journal article

Effects of reoxidation on band alignment in N-incorporated SiON films as a function of sequential thermal annealing in NO and NH3

APPLIED PHYSICS LETTERS, 93(1).

By: W. Lee*, M. Cho*, K. Chung n, Y. Lee*, D. Kim*, S. Choi*, U. Chung*, J. Moon*

co-author countries: Korea (Republic of) 🇰🇷
Source: Web Of Science
Added: August 6, 2018

2008 journal article

Interfacial reaction of atomic-layer-deposited HfO2 film as a function of the surface state of an n-GaAs (100) substrate

APPLIED PHYSICS LETTERS, 93(19).

By: C. Kim*, S. Cho*, M. Cho*, K. Chung n, C. An*, H. Kim*, H. Lee*, D. Ko*

co-author countries: Korea (Republic of) 🇰🇷
author keywords: annealing; atomic layer deposition; gallium arsenide; hafnium compounds; stoichiometry; thin films; transmission electron microscopy; valence bands; X-ray photoelectron spectra
Source: Web Of Science
Added: August 6, 2018

2008 journal article

Suppression of defect states in HfSiON gate dielectric films on n-type Ge(100) substrates

APPLIED PHYSICS LETTERS, 93(18).

By: K. Chung n, H. Seo n, J. Long n & G. Lucovsky n

author keywords: annealing; conduction bands; defect states; diffusion; ellipsometry; germanium; hafnium compounds; high-k dielectric thin films; ion-surface impact; X-ray absorption spectra
Source: Web Of Science
Added: August 6, 2018

2008 journal article

Thermal annealing effects on the atomic layer deposited LaAlO3 thin films on Si substrate

ELECTROCHEMICAL AND SOLID STATE LETTERS, 11(7), G33–G36.

By: D. Eom*, C. Hwang*, H. Kim*, M. Cho* & K. Chung n

co-author countries: Korea (Republic of) 🇰🇷
Source: Web Of Science
Added: August 6, 2018

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