2009 article

Application of non-linear optical second harmonic generation and X-ray absorption and spectroscopies to defect related properties of Hf silicate and Hf Si oxynitride gate dielectrics

MICROELECTRONIC ENGINEERING, Vol. 86, pp. 1654–1657.

By: K. Gundogdu n, G. Lucovsky n, K. Chung n, J. Kim n & D. Nordlund*

author keywords: Hf oxide based dielectrics; Phase separated Hf silicates; Hf Si oxynitrides; Non-linear optical second harmonic generation; X-ray absorption spectroscopy; Vacancy defects; Elimination of macroscopic strain
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2009 journal article

Behavior of strain at a thin Ge pile-up layer formed by dry oxidation of a Si0.7Ge0.3 film

THIN SOLID FILMS, 518(8), 2065–2069.

By: B. Min*, J. Yoo*, H. Sohn*, D. Ko*, M. Cho*, K. Chung n, T. Lee*

author keywords: Si1-xGex; Oxidation; Ge pile-up layer; Relaxation; Medium energy ion scattering; Strain
Source: Web Of Science
Added: August 6, 2018

2009 journal article

Changes in the structure of an atomic-layer-deposited HfO2 film on a GaAs (100) substrate as a function of postannealing temperature

APPLIED PHYSICS LETTERS, 95(4).

author keywords: atomic layer deposition; crystal structure; energy gap; hafnium compounds; high-k dielectric thin films; rapid thermal annealing; stoichiometry; surface chemistry
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

2009 journal article

Extrinsic interface formation of HfO2 and Al2O3/GeOx gate stacks on Ge (100) substrates

JOURNAL OF APPLIED PHYSICS, 106(4).

By: H. Seo*, F. Bellenger*, K. Chung n, M. Houssa*, M. Meuris*, M. Heyns*, G. Lucovsky n

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

2009 journal article

Instability of incorporated nitrogen in HfO2 films grown on strained Si0.7Ge0.3 layers

APPLIED PHYSICS LETTERS, 94(4).

By: K. Chung n, G. Lucovsky n, W. Lee*, M. Cho* & H. Jeon*

author keywords: annealing; chemical interdiffusion; Ge-Si alloys; hafnium compounds; high-k dielectric thin films; ion-surface impact; nitrogen; surface chemistry; thermal stability; XANES; X-ray photoelectron spectra
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

2009 journal article

Nucleation Behavior of Atomic Layer Deposited SiO2 for Hf-Silicate Films

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 156(5), G43–G47.

By: K. Chung n, W. Lee*, C. Kim*, M. Cho & D. Moon*

Source: Web Of Science
Added: August 6, 2018

2009 journal article

Preparation of Native Oxide and Carbon-Minimized Ge Surface by NH4OH-Based Cleaning for High-k/Ge MOS Gate Stacks

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 156(11), H813–H817.

By: H. Seo*, K. Chung n, J. Long n & G. Lucovsky n

Source: Web Of Science
Added: August 6, 2018

2009 article

Spectroscopic differentiation between O-atom vacancy and divacancy defects, respectively, in TiO2 and HfO2 by X-ray absorption spectroscopy

MICROELECTRONIC ENGINEERING, Vol. 86, pp. 1676–1679.

By: G. Lucovsky n, K. Chung n, J. Kim n & D. Norlund*

author keywords: Monovacancies; Divacancies; X-ray absorption spectroscopy; Pre-edge regime; Bound resonance states; Immobile and mobile vacancies
Source: Web Of Science
Added: August 6, 2018

2009 journal article

Study of Hafnium Silicate Treated with NO Gas Annealing

JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 54(2), 637–642.

By: D. Suh*, D. Ko, M. Cho & K. Chung n

author keywords: High-k; Hafnium silicate; Atomic Layer Deposition
Source: Web Of Science
Added: August 6, 2018

2009 journal article

The Effect of NH3 on the Interface of HfO2 and Al2O3 Films on GaAs(100) Surfaces

ELECTROCHEMICAL AND SOLID STATE LETTERS, 12(10), H376–H377.

By: D. Suh, Y. Cho, Y. Lee, D. Ko, K. Chung n & M. Cho*

UN Sustainable Development Goal Categories
6. Clean Water and Sanitation (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

2008 journal article

Change in the interfacial reaction of Hf-silicate film as a function of thickness and stoichiometry

JOURNAL OF CHEMICAL PHYSICS, 129(3).

By: M. Cho*, C. Kim*, K. Moon*, K. Chung n, C. Yim*, D. Ko*, H. Sohn*, H. Jeon*

TL;DR: The phase separation phenomenon demonstrates critically different behaviors at different film thicknesses and stoichiometries because the diffusion of Si from interface to surface is dependent on these factors. (via Semantic Scholar)
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

2008 journal article

Effects of reoxidation on band alignment in N-incorporated SiON films as a function of sequential thermal annealing in NO and NH3

APPLIED PHYSICS LETTERS, 93(1).

By: W. Lee*, M. Cho*, K. Chung n, Y. Lee*, D. Kim*, S. Choi*, U. Chung*, J. Moon*

UN Sustainable Development Goal Categories
6. Clean Water and Sanitation (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

2008 journal article

Interfacial reaction of atomic-layer-deposited HfO2 film as a function of the surface state of an n-GaAs (100) substrate

APPLIED PHYSICS LETTERS, 93(19).

By: C. Kim*, S. Cho*, M. Cho*, K. Chung n, C. An*, H. Kim*, H. Lee*, D. Ko*

author keywords: annealing; atomic layer deposition; gallium arsenide; hafnium compounds; stoichiometry; thin films; transmission electron microscopy; valence bands; X-ray photoelectron spectra
Source: Web Of Science
Added: August 6, 2018

2008 journal article

Suppression of defect states in HfSiON gate dielectric films on n-type Ge(100) substrates

APPLIED PHYSICS LETTERS, 93(18).

By: K. Chung n, H. Seo n, J. Long n & G. Lucovsky n

author keywords: annealing; conduction bands; defect states; diffusion; ellipsometry; germanium; hafnium compounds; high-k dielectric thin films; ion-surface impact; X-ray absorption spectra
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

2008 journal article

Thermal annealing effects on the atomic layer deposited LaAlO3 thin films on Si substrate

ELECTROCHEMICAL AND SOLID STATE LETTERS, 11(7), G33–G36.

By: D. Eom*, C. Hwang*, H. Kim*, M. Cho* & K. Chung n

Source: Web Of Science
Added: August 6, 2018

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