Works (15)
Updated: July 5th, 2023 21:21
2010 journal article
Behavior of strain at a thin Ge pile-up layer formed by dry oxidation of a Si0.7Ge0.3 film
THIN SOLID FILMS, 518(8), 2065–2069.
author keywords: Si1-xGex; Oxidation; Ge pile-up layer; Relaxation; Medium energy ion scattering; Strain
Source: Web Of Science
Added: August 6, 2018
2009 article
Application of non-linear optical second harmonic generation and X-ray absorption and spectroscopies to defect related properties of Hf silicate and Hf Si oxynitride gate dielectrics
MICROELECTRONIC ENGINEERING, Vol. 86, pp. 1654–1657.
author keywords: Hf oxide based dielectrics; Phase separated Hf silicates; Hf Si oxynitrides; Non-linear optical second harmonic generation; X-ray absorption spectroscopy; Vacancy defects; Elimination of macroscopic strain
Sources: Web Of Science, ORCID
Added: August 6, 2018
2009 journal article
Changes in the structure of an atomic-layer-deposited HfO2 film on a GaAs (100) substrate as a function of postannealing temperature
APPLIED PHYSICS LETTERS, 95(4).
author keywords: atomic layer deposition; crystal structure; energy gap; hafnium compounds; high-k dielectric thin films; rapid thermal annealing; stoichiometry; surface chemistry
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(OpenAlex)
Source: Web Of Science
Added: August 6, 2018
2009 journal article
Extrinsic interface formation of HfO2 and Al2O3/GeOx gate stacks on Ge (100) substrates
JOURNAL OF APPLIED PHYSICS, 106(4).
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(OpenAlex)
Source: Web Of Science
Added: August 6, 2018
2009 journal article
Instability of incorporated nitrogen in HfO2 films grown on strained Si0.7Ge0.3 layers
APPLIED PHYSICS LETTERS, 94(4).
author keywords: annealing; chemical interdiffusion; Ge-Si alloys; hafnium compounds; high-k dielectric thin films; ion-surface impact; nitrogen; surface chemistry; thermal stability; XANES; X-ray photoelectron spectra
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(OpenAlex)
Source: Web Of Science
Added: August 6, 2018
2009 journal article
Nucleation Behavior of Atomic Layer Deposited SiO2 for Hf-Silicate Films
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 156(5), G43–G47.
Source: Web Of Science
Added: August 6, 2018
2009 journal article
Preparation of Native Oxide and Carbon-Minimized Ge Surface by NH4OH-Based Cleaning for High-k/Ge MOS Gate Stacks
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 156(11), H813–H817.
Source: Web Of Science
Added: August 6, 2018
2009 article
Spectroscopic differentiation between O-atom vacancy and divacancy defects, respectively, in TiO2 and HfO2 by X-ray absorption spectroscopy
MICROELECTRONIC ENGINEERING, Vol. 86, pp. 1676–1679.
author keywords: Monovacancies; Divacancies; X-ray absorption spectroscopy; Pre-edge regime; Bound resonance states; Immobile and mobile vacancies
Source: Web Of Science
Added: August 6, 2018
2009 journal article
Study of Hafnium Silicate Treated with NO Gas Annealing
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 54(2), 637–642.
author keywords: High-k; Hafnium silicate; Atomic Layer Deposition
Source: Web Of Science
Added: August 6, 2018
2009 journal article
The Effect of NH3 on the Interface of HfO2 and Al2O3 Films on GaAs(100) Surfaces
ELECTROCHEMICAL AND SOLID STATE LETTERS, 12(10), H376–H377.
UN Sustainable Development Goal Categories
6. Clean Water and Sanitation
(OpenAlex)
Source: Web Of Science
Added: August 6, 2018
2008 journal article
Change in the interfacial reaction of Hf-silicate film as a function of thickness and stoichiometry
JOURNAL OF CHEMICAL PHYSICS, 129(3).
TL;DR:
The phase separation phenomenon demonstrates critically different behaviors at different film thicknesses and stoichiometries because the diffusion of Si from interface to surface is dependent on these factors.
(via Semantic Scholar)
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(OpenAlex)
Source: Web Of Science
Added: August 6, 2018
2008 journal article
Effects of reoxidation on band alignment in N-incorporated SiON films as a function of sequential thermal annealing in NO and NH3
APPLIED PHYSICS LETTERS, 93(1).
UN Sustainable Development Goal Categories
6. Clean Water and Sanitation
(OpenAlex)
Source: Web Of Science
Added: August 6, 2018
2008 journal article
Interfacial reaction of atomic-layer-deposited HfO2 film as a function of the surface state of an n-GaAs (100) substrate
APPLIED PHYSICS LETTERS, 93(19).
author keywords: annealing; atomic layer deposition; gallium arsenide; hafnium compounds; stoichiometry; thin films; transmission electron microscopy; valence bands; X-ray photoelectron spectra
Source: Web Of Science
Added: August 6, 2018
2008 journal article
Suppression of defect states in HfSiON gate dielectric films on n-type Ge(100) substrates
APPLIED PHYSICS LETTERS, 93(18).
author keywords: annealing; conduction bands; defect states; diffusion; ellipsometry; germanium; hafnium compounds; high-k dielectric thin films; ion-surface impact; X-ray absorption spectra
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(OpenAlex)
Source: Web Of Science
Added: August 6, 2018
2008 journal article
Thermal annealing effects on the atomic layer deposited LaAlO3 thin films on Si substrate
ELECTROCHEMICAL AND SOLID STATE LETTERS, 11(7), G33–G36.
Source: Web Of Science
Added: August 6, 2018
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