Kwun-Bum Chung

Behavior of strain at a thin Ge pile-up layer formed by dry oxidation of a Si0.7Ge0.3 film

THIN SOLID FILMS, 518(8), 2065–2069.

Application of non-linear optical second harmonic generation and X-ray absorption and spectroscopies to defect related properties of Hf silicate and Hf Si oxynitride gate dielectrics

MICROELECTRONIC ENGINEERING, Vol. 86, pp. 1654–1657.

Changes in the structure of an atomic-layer-deposited HfO2 film on a GaAs (100) substrate as a function of postannealing temperature

APPLIED PHYSICS LETTERS, 95(4).

Extrinsic interface formation of HfO2 and Al2O3/GeOx gate stacks on Ge (100) substrates

JOURNAL OF APPLIED PHYSICS, 106(4).

Instability of incorporated nitrogen in HfO2 films grown on strained Si0.7Ge0.3 layers

APPLIED PHYSICS LETTERS, 94(4).

Nucleation Behavior of Atomic Layer Deposited SiO2 for Hf-Silicate Films

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 156(5), G43–G47.

Preparation of Native Oxide and Carbon-Minimized Ge Surface by NH4OH-Based Cleaning for High-k/Ge MOS Gate Stacks

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 156(11), H813–H817.

Spectroscopic differentiation between O-atom vacancy and divacancy defects, respectively, in TiO2 and HfO2 by X-ray absorption spectroscopy

MICROELECTRONIC ENGINEERING, Vol. 86, pp. 1676–1679.

Study of Hafnium Silicate Treated with NO Gas Annealing

JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 54(2), 637–642.

The Effect of NH3 on the Interface of HfO2 and Al2O3 Films on GaAs(100) Surfaces

ELECTROCHEMICAL AND SOLID STATE LETTERS, 12(10), H376–H377.

Change in the interfacial reaction of Hf-silicate film as a function of thickness and stoichiometry

JOURNAL OF CHEMICAL PHYSICS, 129(3).

Effects of reoxidation on band alignment in N-incorporated SiON films as a function of sequential thermal annealing in NO and NH3

APPLIED PHYSICS LETTERS, 93(1).

Interfacial reaction of atomic-layer-deposited HfO2 film as a function of the surface state of an n-GaAs (100) substrate

APPLIED PHYSICS LETTERS, 93(19).

Suppression of defect states in HfSiON gate dielectric films on n-type Ge(100) substrates

APPLIED PHYSICS LETTERS, 93(18).

Thermal annealing effects on the atomic layer deposited LaAlO3 thin films on Si substrate

ELECTROCHEMICAL AND SOLID STATE LETTERS, 11(7), G33–G36.