Kwun-Bum Chung

Min, B.-G., Yoo, J.-H., Sohn, H.-C., Ko, D.-H., Cho, M.-H., Chung, K.-B., & Lee, T.-W. (2010). Behavior of strain at a thin Ge pile-up layer formed by dry oxidation of a Si0.7Ge0.3 film. THIN SOLID FILMS, 518(8), 2065–2069. https://doi.org/10.1016/j.tsf.2009.07.145

Gundogdu, K., Lucovsky, G., Chung, K.-B., Kim, J.-W., & Nordlund, D. (2009). Application of non-linear optical second harmonic generation and X-ray absorption and spectroscopies to defect related properties of Hf silicate and Hf Si oxynitride gate dielectrics. MICROELECTRONIC ENGINEERING, Vol. 86, pp. 1654–1657. https://doi.org/10.1016/j.mee.2009.03.004

Kim, C. Y., Cho, S. W., Cho, M.-H., Chung, K. B., Suh, D. C., Ko, D.-H., … Lee, H. J. (2009). Changes in the structure of an atomic-layer-deposited HfO2 film on a GaAs (100) substrate as a function of postannealing temperature. APPLIED PHYSICS LETTERS, 95(4). https://doi.org/10.1063/1.3182702

Seo, H., Bellenger, F., Chung, K. B., Houssa, M., Meuris, M., Heyns, M., & Lucovsky, G. (2009). Extrinsic interface formation of HfO2 and Al2O3/GeOx gate stacks on Ge (100) substrates. JOURNAL OF APPLIED PHYSICS, 106(4). https://doi.org/10.1063/1.3204026

Chung, K. B., Lucovsky, G., Lee, W. J., Cho, M.-H., & Jeon, H. (2009). Instability of incorporated nitrogen in HfO2 films grown on strained Si0.7Ge0.3 layers. APPLIED PHYSICS LETTERS, 94(4). https://doi.org/10.1063/1.3077014

Chung, K.-B., Lee, W. J., Kim, C. Y., Cho, M.-H., & Moon, D. W. (2009). Nucleation Behavior of Atomic Layer Deposited SiO2 for Hf-Silicate Films. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 156(5), G43–G47. https://doi.org/10.1149/1.3098496

Seo, H., Chung, K. B., Long, J. P., & Lucovsky, G. (2009). Preparation of Native Oxide and Carbon-Minimized Ge Surface by NH4OH-Based Cleaning for High-k/Ge MOS Gate Stacks. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 156(11), H813–H817. https://doi.org/10.1149/1.3212848

Lucovsky, G., Chung, K.-B., Kim, J.-W., & Norlund, D. (2009). Spectroscopic differentiation between O-atom vacancy and divacancy defects, respectively, in TiO2 and HfO2 by X-ray absorption spectroscopy. MICROELECTRONIC ENGINEERING, Vol. 86, pp. 1676–1679. https://doi.org/10.1016/j.mee.2009.03.005

Suh, D. C., Ko, D.-H., Cho, M.-H., & Chung, K. B. (2009). Study of Hafnium Silicate Treated with NO Gas Annealing. JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 54(2), 637–642. https://doi.org/10.3938/jkps.54.637

Suh, D. C., Cho, Y. D., Lee, Y., Ko, D.-H., Chung, K. B., & Cho, M.-H. (2009). The Effect of NH3 on the Interface of HfO2 and Al2O3 Films on GaAs(100) Surfaces. ELECTROCHEMICAL AND SOLID STATE LETTERS, 12(10), H376–H377. https://doi.org/10.1149/1.3193534

Cho, M.-H., Kim, C. Y., Moon, K., Chung, K. B., Yim, C. J., Ko, D.-H., … Jeon, H. (2008). Change in the interfacial reaction of Hf-silicate film as a function of thickness and stoichiometry. JOURNAL OF CHEMICAL PHYSICS, 129(3). https://doi.org/10.1063/1.2955461

Lee, W. J., Cho, M.-H., Chung, K. B., Lee, Y. S., Kim, D. C., Choi, S. Y., … Moon, J. T. (2008). Effects of reoxidation on band alignment in N-incorporated SiON films as a function of sequential thermal annealing in NO and NH3. APPLIED PHYSICS LETTERS, 93(1). https://doi.org/10.1063/1.2955835

Kim, C. Y., Cho, S. W., Cho, M.-H., Chung, K. B., An, C.-H., Kim, H., … Ko, D.-H. (2008). Interfacial reaction of atomic-layer-deposited HfO2 film as a function of the surface state of an n-GaAs (100) substrate. APPLIED PHYSICS LETTERS, 93(19). https://doi.org/10.1063/1.2996261

Chung, K. B., Seo, H., Long, J. P., & Lucovsky, G. (2008). Suppression of defect states in HfSiON gate dielectric films on n-type Ge(100) substrates. APPLIED PHYSICS LETTERS, 93(18). https://doi.org/10.1063/1.3005422

Eom, D., Hwang, C. S., Kim, H. J., Cho, M.-H., & Chung, K. B. (2008). Thermal annealing effects on the atomic layer deposited LaAlO3 thin films on Si substrate. ELECTROCHEMICAL AND SOLID STATE LETTERS, 11(7), G33–G36. https://doi.org/10.1149/1.2916437