Works (6)

Updated: July 5th, 2023 15:33

2022 article

Effects of Annealing on Co/Au and Ni/Au Schottky Contacts on beta-Ga2O3

Favela, E. V., Zhang, K., Cabral, M. J., Ho, A., Kim, S. H., Das, K. K., & Porter, L. M. (2022, December 23). JOURNAL OF ELECTRONIC MATERIALS.

By: E. Favela*, K. Zhang, M. Cabral, A. Ho, S. Kim, K. Das*, L. Porter

co-author countries: United States of America 🇺🇸
author keywords: Schottky contacts; thermal stability; gallium oxide; dewetting; agglomeration
Source: Web Of Science
Added: January 23, 2023

2022 journal article

Evidence of thermionic emission in forward biased beta-Ga2O3 Schottky diodes at Boltzmann doping limit

JOURNAL OF APPLIED PHYSICS, 131(2).

co-author countries: India 🇮🇳 United States of America 🇺🇸
Source: Web Of Science
Added: January 31, 2022

2021 journal article

Effect of metal contacts on (100) beta-Ga2O3 Schottky barriers

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 39(3).

co-author countries: Germany 🇩🇪 United States of America 🇺🇸
Source: Web Of Science
Added: March 29, 2021

2021 journal article

Temperature dependence of barrier height inhomogeneity in beta-Ga2O3 Schottky barrier diodes

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 39(4).

By: A. Jadhav*, L. Lyle*, Z. Xu*, K. Das n, L. Porter* & B. Sarkar*

co-author countries: India 🇮🇳 United States of America 🇺🇸
Source: Web Of Science
Added: September 7, 2021

2019 article

Schottky contacts to beta-Ga2O3

GALLIUM OXIDE: TECHNOLOGY, DEVICES AND APPLICATIONS, pp. 231–261.

By: L. Lyle*, L. Jiang*, K. Das n & L. Porter*

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: July 8, 2019

2018 journal article

Low-temperature deposition of polycrystalline germanium on silicon by magnetron sputtering

ELECTRONICS LETTERS, 54(17), 1043-+.

By: N. Korivi*, N. Nujhat*, S. Ahmed*, L. Jiang* & K. Das n

co-author countries: United States of America 🇺🇸
author keywords: X-ray diffraction; elemental semiconductors; flexible electronics; sputtered coatings; sputter deposition; Raman spectra; silicon; germanium; semiconductor growth; semiconductor thin films; nanostructured materials; nanofabrication; amorphous semiconductors; direct current magnetron sputtering; sputter coating; low thermal budget; silicon substrate; germanium layer; interfacial silicon layer; amorphous germanium; low-temperature deposition; silicon-germanium devices; polycrystalline germanium-on-silicon; nanometre scale thickness silicon layer; X-ray diffraction; Raman spectroscopy; germanium film quality; post-CMOS integration; flexible electronics; temperature 300; 0 degC; Si; Si-Ge
Source: Web Of Science
Added: October 19, 2018

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