Kalyan Kumar Das

Works (6)

Updated: July 5th, 2023 15:33

2022 article

Effects of Annealing on Co/Au and Ni/Au Schottky Contacts on beta-Ga2O3

Favela, E. V., Zhang, K., Cabral, M. J., Ho, A., Kim, S. H., Das, K. K., & Porter, L. M. (2022, December 23). JOURNAL OF ELECTRONIC MATERIALS.

By: E. Favela *, K. Zhang *, M. Cabral *, A. Ho *, S. Kim *, K. Das n, L. Porter *

author keywords: Schottky contacts; thermal stability; gallium oxide; dewetting; agglomeration
UN Sustainable Development Goal Categories
Source: Web Of Science
Added: January 23, 2023

2022 journal article

Evidence of thermionic emission in forward biased beta-Ga2O3 Schottky diodes at Boltzmann doping limit

JOURNAL OF APPLIED PHYSICS, 131(2).

By: S. Mukhopadhyay *, L. Lyle *, H. Pal*, K. Das n, L. Porter * & B. Sarkar*

UN Sustainable Development Goal Categories
Source: Web Of Science
Added: January 31, 2022

2021 journal article

Effect of metal contacts on (100) beta-Ga2O3 Schottky barriers

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 39(3).

By: L. Lyle  n, K. Jiang  n, E. Favela  n, K. Das n, A. Popp  n, Z. Galazka  n, G. Wagner n, L. Porter  n

UN Sustainable Development Goal Categories
Source: Web Of Science
Added: March 29, 2021

2021 journal article

Temperature dependence of barrier height inhomogeneity in beta-Ga2O3 Schottky barrier diodes

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 39(4).

By: A. Jadhav*, L. Lyle *, Z. Xu*, K. Das n, L. Porter * & B. Sarkar *

UN Sustainable Development Goal Categories
Source: Web Of Science
Added: September 7, 2021

2019 article

Schottky contacts to beta-Ga2O3

GALLIUM OXIDE: TECHNOLOGY, DEVICES AND APPLICATIONS, pp. 231–261.

By: L. Lyle *, L. Jiang *, K. Das n & L. Porter*

UN Sustainable Development Goal Categories
Source: Web Of Science
Added: July 8, 2019

2018 journal article

Low-temperature deposition of polycrystalline germanium on silicon by magnetron sputtering

ELECTRONICS LETTERS, 54(17), 1043-+.

By: N. Korivi*, N. Nujhat*, S. Ahmed *, L. Jiang * & K. Das n

author keywords: X-ray diffraction; elemental semiconductors; flexible electronics; sputtered coatings; sputter deposition; Raman spectra; silicon; germanium; semiconductor growth; semiconductor thin films; nanostructured materials; nanofabrication; amorphous semiconductors; direct current magnetron sputtering; sputter coating; low thermal budget; silicon substrate; germanium layer; interfacial silicon layer; amorphous germanium; low-temperature deposition; silicon-germanium devices; polycrystalline germanium-on-silicon; nanometre scale thickness silicon layer; X-ray diffraction; Raman spectroscopy; germanium film quality; post-CMOS integration; flexible electronics; temperature 300; 0 degC; Si; Si-Ge
UN Sustainable Development Goal Categories
Source: Web Of Science
Added: October 19, 2018

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