Works (13)

2020 journal article

1.2-kV 4H-SiC SenseFET With Monolithically Integrated Sensing Resistor

IEEE ELECTRON DEVICE LETTERS, 41(3), 437–440.

By: K. Han & B. Baliga

Source: Web Of Science
Added: April 6, 2020

2020 journal article

2.3 kV 4H-SiC Accumulation-Channel Split-Gate Planar Power MOSFETs With Reduced Gate Charge

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 8(1), 499–504.

By: A. Agarwal, K. Han & B. Baliga

Source: Web Of Science
Added: June 22, 2020

2020 article

600 V 4H-SiC MOSFETs Fabricated in Commercial Foundry With Reduced Gate Oxide Thickness of 27 nm to Achieve IGBT-Compatible Gate Drive of 15 V (vol 40, pg 1792, 2019)

Agarwal, A., Han, K., & Jayant Baliga, B. (2020, January). IEEE ELECTRON DEVICE LETTERS, Vol. 41, pp. 195–195.

By: A. Agarwal, K. Han & B. Jayant Baliga

Source: Web Of Science
Added: February 3, 2020

2019 journal article

600 V 4H-SiC MOSFETs Fabricated in Commercial Foundry With Reduced Gate Oxide Thickness of 27 nm to Achieve IGBT-Compatible Gate Drive of 15 V

IEEE ELECTRON DEVICE LETTERS, 40(11), 1792–1795.

By: A. Agarwal, K. Han & B. Baliga

Source: Web Of Science
Added: December 2, 2019

2019 journal article

Analysis and Experimental Quantification of 1.2-kV 4H-SiC Split-Gate Octagonal MOSFET

IEEE ELECTRON DEVICE LETTERS, 40(7), 1163–1166.

By: K. Han & B. Baliga

Source: Web Of Science
Added: July 22, 2019

2019 journal article

Comparison of Four Cell Topologies for 1.2-kV Accumulation- and Inversion-Channel 4H-SiC MOSFETs: Analysis and Experimental Results

IEEE TRANSACTIONS ON ELECTRON DEVICES, 66(5), 2321–2326.

By: K. Han & B. Baliga

Source: Web Of Science
Added: June 17, 2019

2019 journal article

Comprehensive Physics of Third Quadrant Characteristics for Accumulation- and Inversion-Channel 1.2-kV 4H-SiC MOSFETs

IEEE TRANSACTIONS ON ELECTRON DEVICES, 66(9), 3923–3928.

By: K. Han & B. Baliga

Source: Web Of Science
Added: September 16, 2019

2019 journal article

Impact of Cell Topology on Characteristics of 600V 4H-SiC Planar MOSFETs

IEEE ELECTRON DEVICE LETTERS, 40(5), 773–776.

By: A. Agarwal, K. Han & B. Baliga

Source: Web Of Science
Added: June 4, 2019

2019 journal article

The 1.2-kV 4H-SiC OCTFET: A New Cell Topology With Improved High-Frequency Figures-of-Merit

IEEE ELECTRON DEVICE LETTERS, 40(2), 299–302.

By: K. Han & B. Baliga

Source: NC State University Libraries
Added: February 18, 2019

2018 journal article

A novel 1.2 kV 4H-SiC buffered-gate (BG) MOSFET: Analysis and experimental results

IEEE Electron Device Letters, 39(2), 248–251.

By: K. Han, B. Baliga & W. Sung

Source: NC State University Libraries
Added: August 6, 2018

2017 conference paper

Applications and characterization of four quadrant GaN switch

2017 ieee energy conversion congress and exposition (ecce), 1967–1974.

By: U. Raheja, G. Gohil, K. Han, S. Acharya, B. Baliga, S. Battacharya, M. Labreque, P. Smith, R. Lal

Source: NC State University Libraries
Added: August 6, 2018

2017 journal article

Split-gate 1.2-kV 4H-SiC MOSFET: Analysis and experimental validation

IEEE Electron Device Letters, 38(10), 1437–1440.

By: K. Han, B. Baliga & W. Sung

Source: NC State University Libraries
Added: August 6, 2018

conference paper

Optimization of the JFET region of 1.2kV SiC MOSFETs for improved high frequency figure of merit (HF-FOM)

Sung, W. J., Han, K. J., & Baliga, B. J. 2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications (WIPDA), 238–241.

By: W. Sung, K. Han & B. Baliga

Source: NC State University Libraries
Added: August 6, 2018