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2021 journal article
650-V 4H-SiC Planar Inversion-Channel Power JBSFETs With 55-nm Gate Oxide: Relative Performance of Three Cell Types
IEEE TRANSACTIONS ON ELECTRON DEVICES, 68(5), 2395–2400.
2021 journal article
Assessment of Linear, Hexagonal, and Octagonal Cell Topologies for 650 V 4H-SiC Inversion-Channel Planar-Gate Power JBSFETs Fabricated With 27 nm Gate Oxide Thickness
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 9, 79–88.
2021 article
Switching Characteristics of a 1.2 kV, 50 m Omega SiC Monolithic Bidirectional Field Effect Transistor (BiDFET) with Integrated JBS Diodes
2021 THIRTY-SIXTH ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION (APEC 2021).
2020 journal article
1.2-kV 4H-SiC SenseFET With Monolithically Integrated Sensing Resistor
IEEE ELECTRON DEVICE LETTERS, 41(3), 437–440.
2020 journal article
2.3 kV 4H-SiC Accumulation-Channel Split-Gate Planar Power MOSFETs With Reduced Gate Charge
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 8(1), 499–504.
2020 article
2.3-kV, 5-A 4H-SiC Ti and Ni JBS Rectifiers manufactured in Commercial Foundry: Impact of Implant Lateral Straggle
2020 IEEE WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS IN ASIA (WIPDA ASIA).
2020 article
600 V 4H-SiC MOSFETs Fabricated in Commercial Foundry With Reduced Gate Oxide Thickness of 27 nm to Achieve IGBT-Compatible Gate Drive of 15 V (vol 40, pg 1792, 2019)
Agarwal, A., Han, K., & Jayant Baliga, B. (2020, January). IEEE ELECTRON DEVICE LETTERS, Vol. 41, pp. 195–195.
2020 journal article
Comparison of 2.3-kV 4H-SiC Accumulation-Channel Planar Power MOSFETs Fabricated With Linear, Square, Hexagonal, and Octagonal Cell Topologies
IEEE TRANSACTIONS ON ELECTRON DEVICES, 67(9), 3673–3678.
2019 journal article
600 V 4H-SiC MOSFETs Fabricated in Commercial Foundry With Reduced Gate Oxide Thickness of 27 nm to Achieve IGBT-Compatible Gate Drive of 15 V
IEEE ELECTRON DEVICE LETTERS, 40(11), 1792–1795.
2019 journal article
Analysis and Experimental Quantification of 1.2-kV 4H-SiC Split-Gate Octagonal MOSFET
IEEE ELECTRON DEVICE LETTERS, 40(7), 1163–1166.
2019 journal article
Comparison of Four Cell Topologies for 1.2-kV Accumulation- and Inversion-Channel 4H-SiC MOSFETs: Analysis and Experimental Results
IEEE TRANSACTIONS ON ELECTRON DEVICES, 66(5), 2321–2326.
2019 journal article
Comprehensive Physics of Third Quadrant Characteristics for Accumulation- and Inversion-Channel 1.2-kV 4H-SiC MOSFETs
IEEE TRANSACTIONS ON ELECTRON DEVICES, 66(9), 3923–3928.
2019 journal article
Impact of Cell Topology on Characteristics of 600V 4H-SiC Planar MOSFETs
IEEE ELECTRON DEVICE LETTERS, 40(5), 773–776.
2019 journal article
The 1.2-kV 4H-SiC OCTFET: A New Cell Topology With Improved High-Frequency Figures-of-Merit
IEEE ELECTRON DEVICE LETTERS, 40(2), 299–302.
2018 journal article
A novel 1.2 kV 4H-SiC buffered-gate (BG) MOSFET: Analysis and experimental results
IEEE Electron Device Letters, 39(2), 248–251.
2017 conference paper
Applications and characterization of four quadrant GaN switch
2017 ieee energy conversion congress and exposition (ecce), 1967–1974.
2017 journal article
Split-gate 1.2-kV 4H-SiC MOSFET: Analysis and experimental validation
IEEE Electron Device Letters, 38(10), 1437–1440.
conference paper
Optimization of the JFET region of 1.2kV SiC MOSFETs for improved high frequency figure of merit (HF-FOM)
Sung, W. J., Han, K. J., & Baliga, B. J. 2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications (WIPDA), 238–241.