Kijeong Han

Power Conversion Systems Enabled by SiC BiDFET Device

Bhattacharya, S., Narwal, R., Shah, S. S., Baliga, B. J., Agarwal, A., Kanale, A., … Cheng, T.-H. (2023, March 1). IEEE Power Electronics Magazine, Vol. 10, pp. 39–43.

The BiDFET Device and Its Impact on Converters

Baliga, B. J., Hopkins, D., Bhattacharya, S., Agarwal, A., Cheng, T.-H., Narwal, R., … Han, K. (2023, March 1). IEEE Power Electronics Magazine, Vol. 10, pp. 20–27.

650-V 4H-SiC Planar Inversion-Channel Power JBSFETs With 55-nm Gate Oxide: Relative Performance of Three Cell Types

Agarwal, A., Han, K., & Baliga, B. J. (2021, April 1). IEEE Transactions on Electron Devices.

Switching Characteristics of a 1.2 kV, 50 mΩ SiC Monolithic Bidirectional Field Effect Transistor (BiDFET) with Integrated JBS Diodes

2021 IEEE Applied Power Electronics Conference and Exposition (APEC). Presented at the 2021 IEEE Applied Power Electronics Conference and Exposition (APEC).

1.2-kV 4H-SiC SenseFET With Monolithically Integrated Sensing Resistor

Han, K., & Baliga, B. J. (2020, January 8). IEEE Electron Device Letters.

2.3 kV 4H-SiC Accumulation-Channel Split-Gate Planar Power MOSFETs With Reduced Gate Charge

Agarwal, A., Han, K., & Baliga, B. J. (2020, January 1). IEEE Journal of the Electron Devices Society.

2.3-kV, 5-A 4H-SiC Ti and Ni JBS Rectifiers manufactured in Commercial Foundry: Impact of Implant Lateral Straggle

Agarwal, A., Han, K., & Baliga, B. J. (2020, September 23).

Assessment of Linear, Hexagonal, and Octagonal Cell Topologies for 650 V 4H-SiC Inversion-Channel Planar-Gate Power JBSFETs Fabricated With 27 nm Gate Oxide Thickness

Agarwal, A., Han, K., & Baliga, B. J. (2020, November 25). IEEE Journal of the Electron Devices Society.

Comparison of 2.3-kV 4H-SiC Accumulation-Channel Planar Power MOSFETs Fabricated With Linear, Square, Hexagonal, and Octagonal Cell Topologies

Agarwal, A., Han, K., & Baliga, B. J. (2020, July 14). IEEE Transactions on Electron Devices.

600 V 4H-SiC MOSFETs Fabricated in Commercial Foundry With Reduced Gate Oxide Thickness of 27 nm to Achieve IGBT-Compatible Gate Drive of 15 V

Agarwal, A., Han, K., & Baliga, B. J. (2019, September 18). IEEE Electron Device Letters.

Analysis and Experimental Quantification of 1.2-kV 4H-SiC Split-Gate Octagonal MOSFET

Han, K., & Baliga, B. J. (2019, May 17). IEEE Electron Device Letters.

Comparison of Four Cell Topologies for 1.2-kV Accumulation- and Inversion-Channel 4H-SiC MOSFETs: Analysis and Experimental Results

Han, K., & Baliga, B. J. (2019, March 29). IEEE Transactions on Electron Devices.

Comprehensive Physics of Third Quadrant Characteristics for Accumulation- and Inversion-Channel 1.2-kV 4H-SiC MOSFETs

Han, K., & Baliga, B. J. (2019, August 1). IEEE Transactions on Electron Devices.

Corrections to “600 V 4H-SiC MOSFETs Fabricated in Commercial Foundry With Reduced Gate Oxide Thickness of 27 nm to Achieve IGBT-Compatible Gate Drive of 15 V” [Nov 19 1792-1795]

Agarwal, A., Han, K., & Baliga, B. J. (2019, December 4). IEEE Electron Device Letters.

Impact of Cell Topology on Characteristics of 600V 4H-SiC Planar MOSFETs

Agarwal, A., Han, K., & Baliga, B. J. (2019, March 29). IEEE Electron Device Letters.

The 1.2-kV 4H-SiC OCTFET: A New Cell Topology With Improved High-Frequency Figures-of-Merit

Han, K., & Baliga, B. J. (2018, December 21). IEEE Electron Device Letters.

A Novel 1.2 kV 4H-SiC Buffered-Gate (BG) MOSFET: Analysis and Experimental Results

Han, K., Baliga, B. J., & Sung, W. (2017, December 21). IEEE Electron Device Letters.

Applications and characterization of four quadrant GaN switch

Raheja, U., Gohil, G., Han, K., Acharya, S., Baliga, B. J., Battacharya, S., … Lal, R. (2017, October 1). 2017 Ieee Energy Conversion Congress and Exposition (Ecce), pp. 1967–1974.

Split-Gate 1.2-kV 4H-SiC MOSFET: Analysis and Experimental Validation

Han, K., Baliga, B. J., & Sung, W. (2017, August 10). IEEE Electron Device Letters.

Optimization of the JFET region of 1.2kV SiC MOSFETs for improved high frequency figure of merit (HF-FOM)

Sung, W. J., Han, K. J., & Baliga, B. J. 2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications (WIPDA), 238–241.