Works (20)

Updated: July 5th, 2023 15:35

2023 journal article

Power Conversion Systems Enabled by SiC BiDFET Device

IEEE POWER ELECTRONICS MAGAZINE, 10(1), 39–43.

Contributors: S. Bhattacharya n, R. Narwal n, S. Shah*, B. Baliga n, A. Agarwal*, A. Kanale n, K. Han*, D. Hopkins n, T. Cheng n

author keywords: Motor drives; Silicon carbide; Power supplies; PIN photodiodes; Switches; Packaging; Transformers
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (Web of Science; OpenAlex)
Sources: Web Of Science, ORCID, NC State University Libraries
Added: March 7, 2023

2023 journal article

The BiDFET Device and Its Impact on Converters

IEEE POWER ELECTRONICS MAGAZINE, 10(1), 20–27.

By: B. Baliga n, D. Hopkins n, S. Bhattacharya n, A. Agarwal*, T. Cheng n, R. Narwal n, A. Kanale n, S. Shah, K. Han*

Contributors: B. Baliga n, D. Hopkins n, S. Bhattacharya n, A. Agarwal*, T. Cheng n, R. Narwal n, A. Kanale n, S. Shah, K. Han*

author keywords: Photovoltaic systems; Motor drives; Capacitors; Rectifiers; Inverters; Topology; Matrix converters
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (Web of Science; OpenAlex)
Sources: Web Of Science, ORCID, NC State University Libraries
Added: March 7, 2023

2021 journal article

650-V 4H-SiC Planar Inversion-Channel Power JBSFETs With 55-nm Gate Oxide: Relative Performance of Three Cell Types

IEEE TRANSACTIONS ON ELECTRON DEVICES, 68(5), 2395–2400.

By: A. Agarwal n, K. Han n & B. Baliga n

author keywords: 4H-silicon carbide (SiC); cell design; hexagonal; inversion; junction barrier Schottky field effect transistor (JBSFET); linear; MOSFET; octagonal
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (Web of Science; OpenAlex)
Source: Web Of Science
Added: May 24, 2021

2021 journal article

Assessment of Linear, Hexagonal, and Octagonal Cell Topologies for 650 V 4H-SiC Inversion-Channel Planar-Gate Power JBSFETs Fabricated With 27 nm Gate Oxide Thickness

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 9, 79–88.

By: A. Agarwal n, K. Han n & B. Baliga n

author keywords: Silicon carbide; 4H-SiC; inversion; JBSFET; cell topology; linear; hexagonal; octagonal; gate oxide thickness
Source: Web Of Science
Added: March 22, 2021

2021 conference paper

Switching Characteristics of a 1.2 kV, 50 mΩ SiC Monolithic Bidirectional Field Effect Transistor (BiDFET) with Integrated JBS Diodes

2021 IEEE Applied Power Electronics Conference and Exposition (APEC), 1267–1274.

Event: 2021 IEEE Applied Power Electronics Conference and Exposition (APEC)

author keywords: Silicon Carbide; Monolithic; Bidirectional; Four-Quadrant; Integrated; JBS Diode
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (Web of Science; OpenAlex)
Sources: Web Of Science, Crossref, NC State University Libraries
Added: September 4, 2021

2020 journal article

1.2-kV 4H-SiC SenseFET With Monolithically Integrated Sensing Resistor

IEEE ELECTRON DEVICE LETTERS, 41(3), 437–440.

By: K. Han n & B. Baliga n

author keywords: Silicon carbide; 4H-SiC; MOSFET; SenseFET; monolithically integrated; sensing resistor; sensing voltage
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (Web of Science; OpenAlex)
Source: Web Of Science
Added: April 6, 2020

2020 journal article

2.3 kV 4H-SiC Accumulation-Channel Split-Gate Planar Power MOSFETs With Reduced Gate Charge

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 8(1), 499–504.

By: A. Agarwal n, K. Han n & B. Baliga n

author keywords: 4H-SiC; 2.3 kV devices; accumulation channel; C-gd; planar-gate MOSFET; Q(gd); R-on,R-sp; silicon carbide; split-gate
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (Web of Science; OpenAlex)
Source: Web Of Science
Added: June 22, 2020

2020 article

2.3-kV, 5-A 4H-SiC Ti and Ni JBS Rectifiers manufactured in Commercial Foundry: Impact of Implant Lateral Straggle

2020 IEEE WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS IN ASIA (WIPDA ASIA).

By: A. Agarwal n, K. Han n & B. Baliga n

author keywords: Junction Barrier Schottky (JBS) rectifier; 4H-SiC; Schottky barrier; Ni Schottky contact; Ti Schottky contact; leakage current knee voltage; on-resistance
UN Sustainable Development Goal Categories
Source: Web Of Science
Added: August 23, 2021

2020 article

600 V 4H-SiC MOSFETs Fabricated in Commercial Foundry With Reduced Gate Oxide Thickness of 27 nm to Achieve IGBT-Compatible Gate Drive of 15 V (vol 40, pg 1792, 2019)

Agarwal, A., Han, K., & Jayant Baliga, B. (2020, January). IEEE ELECTRON DEVICE LETTERS, Vol. 41, pp. 195–195.

By: A. Agarwal n, K. Han n & B. Jayant Baliga n

author keywords: MOSFET; Silicon carbide; Logic gates; Silicon; Foundries; Insulated gate bipolar transistors; Object recognition
UN Sustainable Development Goal Categories
Source: Web Of Science
Added: February 3, 2020

2020 journal article

Comparison of 2.3-kV 4H-SiC Accumulation-Channel Planar Power MOSFETs Fabricated With Linear, Square, Hexagonal, and Octagonal Cell Topologies

IEEE TRANSACTIONS ON ELECTRON DEVICES, 67(9), 3673–3678.

By: A. Agarwal n, K. Han n & B. Baliga n

author keywords: 4H-SiC; accumulation; cell topology; hexagonal; linear; MOSFET; octagonal; silicon carbide (SiC); square
UN Sustainable Development Goal Categories
Source: Web Of Science
Added: September 14, 2020

2019 journal article

600 V 4H-SiC MOSFETs Fabricated in Commercial Foundry With Reduced Gate Oxide Thickness of 27 nm to Achieve IGBT-Compatible Gate Drive of 15 V

IEEE ELECTRON DEVICE LETTERS, 40(11), 1792–1795.

By: A. Agarwal n, K. Han n & B. Baliga n

author keywords: Logic gates; MOSFET; Voltage measurement; Capacitance; Silicon carbide; Electric fields; Silicon; 4H-SiC; 600 V; Cgd; gate oxide; inversion channel; planar-gate MOSFET; Qgd; Ron; sp; silicon carbide
UN Sustainable Development Goal Categories
Source: Web Of Science
Added: December 2, 2019

2019 journal article

Analysis and Experimental Quantification of 1.2-kV 4H-SiC Split-Gate Octagonal MOSFET

IEEE ELECTRON DEVICE LETTERS, 40(7), 1163–1166.

By: K. Han* & B. Baliga*

author keywords: Silicon carbide; 4H-SiC; MOSFET; cell design; octagonal; OCTFET; split-gate; C-gd; Q(gd); HF-FOMs
UN Sustainable Development Goal Categories
Source: Web Of Science
Added: July 22, 2019

2019 journal article

Comparison of Four Cell Topologies for 1.2-kV Accumulation- and Inversion-Channel 4H-SiC MOSFETs: Analysis and Experimental Results

IEEE TRANSACTIONS ON ELECTRON DEVICES, 66(5), 2321–2326.

By: K. Han n & B. Baliga n

author keywords: 4H-SiC; cell; C-gd; C-iss; hexagonal; HF-FOMs; linear; MOSFET; octagonal; Q(gd); silicon carbide (SiC); square
TL;DR: The electrical characteristics of 1.2-kV-rated 4H-SiC accumulation (Acc) and inversion (Inv) channel MOSFETs with linear, square, hexagonal, and octagonal cell topologies fabricated using the same design rules and process flow in a 6-in foundry are compared for the first time. (via Semantic Scholar)
UN Sustainable Development Goal Categories
Source: Web Of Science
Added: June 17, 2019

2019 journal article

Comprehensive Physics of Third Quadrant Characteristics for Accumulation- and Inversion-Channel 1.2-kV 4H-SiC MOSFETs

IEEE TRANSACTIONS ON ELECTRON DEVICES, 66(9), 3923–3928.

By: K. Han n & B. Baliga n

author keywords: 4H-SiC; accumulation; body diode; inversion; MOSFET; silicon carbide; third quadrant
UN Sustainable Development Goal Categories
Source: Web Of Science
Added: September 16, 2019

2019 journal article

Impact of Cell Topology on Characteristics of 600V 4H-SiC Planar MOSFETs

IEEE ELECTRON DEVICE LETTERS, 40(5), 773–776.

By: A. Agarwal n, K. Han n & B. Baliga n

author keywords: 4H-SiC; 600 V; cell topologies; C-gd; hexagonal layout; linear layout; octagonal layout; planar MOSFET; Q(gd); R-on,R-sp; silicon carbide; square layout
UN Sustainable Development Goal Categories
Source: Web Of Science
Added: June 4, 2019

2019 journal article

The 1.2-kV 4H-SiC OCTFET: A New Cell Topology With Improved High-Frequency Figures-of-Merit

IEEE ELECTRON DEVICE LETTERS, 40(2), 299–302.

By: K. Han n & B. Baliga n

author keywords: Silicon carbide; 4H-SiC; MOSFET; cell; ALL; octagonal; C-gd; Q(gd); HF-FOMs
UN Sustainable Development Goal Categories
Source: Web Of Science
Added: February 18, 2019

2018 journal article

A Novel 1.2 kV 4H-SiC Buffered-Gate (BG) MOSFET: Analysis and Experimental Results

IEEE ELECTRON DEVICE LETTERS, 39(2), 248–251.

By: K. Han n, B. Baliga n & W. Sung*

author keywords: Silicon carbide; 4H-SiC; MOSFET; split gate; buffered gate; C-gd; Q(gd); HF-FOMs
TL;DR: A novel 1.2-kV-rated 4H-SiC buffered-gate MOSFET structure is proposed and experimentally demonstrated to have superior high frequency figures-of-merit (HF-FOMs) for the first time. (via Semantic Scholar)
UN Sustainable Development Goal Categories
Source: Web Of Science
Added: August 6, 2018

2017 conference paper

Applications and characterization of four quadrant GaN switch

2017 ieee energy conversion congress and exposition (ecce), 2017-January, 1967–1974.

By: U. Raheja n, G. Gohil n, K. Han n, S. Acharya n, B. Baliga n, S. Battacharya n, M. Labreque*, P. Smith*, R. Lal*

Contributors: U. Raheja n, G. Gohil n, K. Han n, S. Acharya n, B. Baliga n, S. Battacharya n, M. Labreque*, P. Smith*, R. Lal*

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Sources: NC State University Libraries, NC State University Libraries, ORCID
Added: August 6, 2018

2017 journal article

Split-gate 1.2-kV 4H-SiC MOSFET: Analysis and experimental validation

IEEE Electron Device Letters, 38(10), 1437–1440.

By: K. Han n, B. Baliga n & W. Sung*

UN Sustainable Development Goal Categories
Source: NC State University Libraries
Added: August 6, 2018

conference paper

Optimization of the JFET region of 1.2kV SiC MOSFETs for improved high frequency figure of merit (HF-FOM)

Sung, W. J., Han, K. J., & Baliga, B. J. 2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications (WIPDA), 238–241.

By: W. Sung, K. Han & B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

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