@article{agarwal_han_baliga_2021, title={650-V 4H-SiC Planar Inversion-Channel Power JBSFETs With 55-nm Gate Oxide: Relative Performance of Three Cell Types}, volume={68}, ISBN={1557-9646}, DOI={10.1109/TED.2021.3067921}, number={5}, journal={IEEE TRANSACTIONS ON ELECTRON DEVICES}, author={Agarwal, Aditi and Han, Kijeong and Baliga, B. J.}, year={2021}, month={May}, pages={2395–2400} }
 @article{agarwal_han_baliga_2021, title={Assessment of Linear, Hexagonal, and Octagonal Cell Topologies for 650 V 4H-SiC Inversion-Channel Planar-Gate Power JBSFETs Fabricated With 27 nm Gate Oxide Thickness}, volume={9}, ISBN={2168-6734}, DOI={10.1109/JEDS.2020.3040353}, journal={IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY}, author={Agarwal, Aditi and Han, Kijeong and Baliga, B. J.}, year={2021}, pages={79–88} }
 @article{kanale_cheng_shah_han_agarwal_baliga_hopkins_bhattacharya_2021, title={Switching Characteristics of a 1.2 kV, 50 m Omega SiC Monolithic Bidirectional Field Effect Transistor (BiDFET) with Integrated JBS Diodes}, DOI={10.1109/APEC42165.2021.9487410}, journal={2021 THIRTY-SIXTH ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION (APEC 2021)}, author={Kanale, Ajit and Cheng, Tzu-Hsuan and Shah, Suyash Sushilkumar and Han, Kijeong and Agarwal, Aditi and Baliga, B. Jayant and Hopkins, Douglas and Bhattacharya, Subhashish}, year={2021} }
 @article{han_baliga_2020, title={1.2-kV 4H-SiC SenseFET With Monolithically Integrated Sensing Resistor}, volume={41}, ISBN={1558-0563}, DOI={10.1109/LED.2020.2964773}, number={3}, journal={IEEE ELECTRON DEVICE LETTERS}, author={Han, Kijeong and Baliga, B. J.}, year={2020}, month={Mar}, pages={437–440} }
 @article{agarwal_han_baliga_2020, title={2.3 kV 4H-SiC Accumulation-Channel Split-Gate Planar Power MOSFETs With Reduced Gate Charge}, volume={8}, ISBN={2168-6734}, DOI={10.1109/JEDS.2020.2991355}, number={1}, journal={IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY}, author={Agarwal, Aditi and Han, Kijeong and Baliga, B. Jayant}, year={2020}, pages={499–504} }
 @article{agarwal_han_baliga_2020, title={2.3-kV, 5-A 4H-SiC Ti and Ni JBS Rectifiers manufactured in Commercial Foundry: Impact of Implant Lateral Straggle}, DOI={10.1109/WiPDAAsia49671.2020.9360272}, journal={2020 IEEE WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS IN ASIA (WIPDA ASIA)}, author={Agarwal, Aditi and Han, Kijeong and Baliga, B. Jayant}, year={2020} }
 @article{agarwal_han_jayant baliga_2020, title={600 V 4H-SiC MOSFETs Fabricated in Commercial Foundry With Reduced Gate Oxide Thickness of 27 nm to Achieve IGBT-Compatible Gate Drive of 15 V (vol 40, pg 1792, 2019)}, volume={41}, ISBN={1558-0563}, DOI={10.1109/LED.2019.2956966}, number={1}, journal={IEEE ELECTRON DEVICE LETTERS}, author={Agarwal, Aditi and Han, Kijeong and Jayant Baliga, B.}, year={2020}, month={Jan}, pages={195–195} }
 @article{agarwal_han_baliga_2020, title={Comparison of 2.3-kV 4H-SiC Accumulation-Channel Planar Power MOSFETs Fabricated With Linear, Square, Hexagonal, and Octagonal Cell Topologies}, volume={67}, ISBN={1557-9646}, DOI={10.1109/TED.2020.3005632}, number={9}, journal={IEEE TRANSACTIONS ON ELECTRON DEVICES}, author={Agarwal, Aditi and Han, Kijeong and Baliga, B. J.}, year={2020}, pages={3673–3678} }
 @article{agarwal_han_baliga_2019, title={600 V 4H-SiC MOSFETs Fabricated in Commercial Foundry With Reduced Gate Oxide Thickness of 27 nm to Achieve IGBT-Compatible Gate Drive of 15 V}, volume={40}, ISBN={1558-0563}, DOI={10.1109/LED.2019.2942259}, number={11}, journal={IEEE ELECTRON DEVICE LETTERS}, author={Agarwal, Aditi and Han, Kijeong and Baliga, B. Jayant}, year={2019}, month={Nov}, pages={1792–1795} }
 @article{han_baliga_2019, title={Analysis and Experimental Quantification of 1.2-kV 4H-SiC Split-Gate Octagonal MOSFET}, volume={40}, ISBN={1558-0563}, DOI={10.1109/LED.2019.2917637}, number={7}, journal={IEEE ELECTRON DEVICE LETTERS}, author={Han, Kijeong and Baliga, B. J.}, year={2019}, month={Jul}, pages={1163–1166} }
 @article{han_baliga_2019, title={Comparison of Four Cell Topologies for 1.2-kV Accumulation- and Inversion-Channel 4H-SiC MOSFETs: Analysis and Experimental Results}, volume={66}, ISBN={1557-9646}, DOI={10.1109/TED.2019.2905736}, number={5}, journal={IEEE TRANSACTIONS ON ELECTRON DEVICES}, author={Han, Kijeong and Baliga, B. J.}, year={2019}, month={May}, pages={2321–2326} }
 @article{han_baliga_2019, title={Comprehensive Physics of Third Quadrant Characteristics for Accumulation- and Inversion-Channel 1.2-kV 4H-SiC MOSFETs}, volume={66}, ISBN={1557-9646}, DOI={10.1109/TED.2019.2929733}, number={9}, journal={IEEE TRANSACTIONS ON ELECTRON DEVICES}, author={Han, Kijeong and Baliga, B. J.}, year={2019}, month={Sep}, pages={3923–3928} }
 @article{agarwal_han_baliga_2019, title={Impact of Cell Topology on Characteristics of 600V 4H-SiC Planar MOSFETs}, volume={40}, ISBN={1558-0563}, DOI={10.1109/LED.2019.2908078}, number={5}, journal={IEEE ELECTRON DEVICE LETTERS}, author={Agarwal, Aditi and Han, Kijeong and Baliga, B. Jayant}, year={2019}, month={May}, pages={773–776} }
 @article{han_baliga_2019, title={The 1.2-kV 4H-SiC OCTFET: A New Cell Topology With Improved High-Frequency Figures-of-Merit}, volume={40}, DOI={10.1109/LED.2018.2889221}, number={2}, journal={IEEE ELECTRON DEVICE LETTERS}, author={Han, Kijeong and Baliga, B. J.}, year={2019}, pages={299–302} }
 @article{han_baliga_sung_2018, title={A novel 1.2 kV 4H-SiC buffered-gate (BG) MOSFET: Analysis and experimental results}, volume={39}, DOI={10.1109/led.2017.2785771}, number={2}, journal={IEEE Electron Device Letters}, author={Han, K. and Baliga, B. J. and Sung, W.}, year={2018}, pages={248–251} }
 @inproceedings{raheja_gohil_han_acharya_baliga_battacharya_labreque_smith_lal_2017, title={Applications and characterization of four quadrant GaN switch}, DOI={10.1109/ecce.2017.8096397}, booktitle={2017 ieee energy conversion congress and exposition (ecce)}, author={Raheja, U. and Gohil, G. and Han, K. and Acharya, S. and Baliga, B. J. and Battacharya, S. and Labreque, M. and Smith, P. and Lal, R.}, year={2017}, pages={1967–1974} }
 @article{han_baliga_sung_2017, title={Split-gate 1.2-kV 4H-SiC MOSFET: Analysis and experimental validation}, volume={38}, DOI={10.1109/led.2017.2738616}, number={10}, journal={IEEE Electron Device Letters}, author={Han, K. and Baliga, B. J. and Sung, W.}, year={2017}, pages={1437–1440} }
 @inproceedings{sung_han_baliga, title={Optimization of the JFET region of 1.2kV SiC MOSFETs for improved high frequency figure of merit (HF-FOM)}, booktitle={2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications (WIPDA)}, author={Sung, W. J. and Han, K. J. and Baliga, B. J.}, pages={238–241} }