Kelsey Mirrielees

Works (9)

Updated: November 19th, 2025 16:18

2025 article

Assessing properties of Al and Ga dopants in ZnSe

Mirrielees, K. J., Wu, Y., & Irving, D. L. (2025, November 17). The Journal of Chemical Physics.

By: K. Mirrielees n, Y. Wu  n & D. Irving n

topics (OpenAlex): Semiconductor Quantum Structures and Devices; ZnO doping and properties; Heusler alloys: electronic and magnetic properties
Source: NC State University Libraries
Added: November 18, 2025

2025 article

Qubit properties of antisite defects in ZnSe

Wu, Y., Mirrielees, K. J., & Irving, D. L. (2025, May 19). Applied Physics Letters.

By: Y. Wu  n, K. Mirrielees n & D. Irving n

topics (OpenAlex): Quantum Dots Synthesis And Properties; Semiconductor Quantum Structures and Devices; Chalcogenide Semiconductor Thin Films
Source: Web Of Science
Added: May 27, 2025

2022 article

Defect Chemistry of Halogen Dopants in ZnSe

Wu, Y., Mirrielees, K. J., & Irving, D. L. (2022, September 1). The Journal of Physical Chemistry Letters.

By: Y. Wu n, K. Mirrielees n & D. Irving n

topics (OpenAlex): Chalcogenide Semiconductor Thin Films; Perovskite Materials and Applications; Quantum Dots Synthesis And Properties
Source: Web Of Science
Added: November 7, 2022

2022 article

On native point defects in ZnSe

Wu, Y., Mirrielees, K. J., & Irving, D. L. (2022, June 6). Applied Physics Letters.

By: Y. Wu n, K. Mirrielees n & D. Irving n

topics (OpenAlex): Chalcogenide Semiconductor Thin Films; Quantum Dots Synthesis And Properties; Semiconductor Quantum Structures and Devices
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Source: Web Of Science
Added: June 20, 2022

2021 article

Computational approaches to point defect simulations for semiconductor solid solution alloys

Mirrielees, K. J., Baker, J. N., Bowes, P. C., & Irving, D. L. (2021, March 1). The Journal of Chemical Physics, Vol. 154.

By: K. Mirrielees n, J. Baker n, P. Bowes n  & D. Irving n

topics (OpenAlex): Semiconductor materials and devices; Ga2O3 and related materials; Semiconductor materials and interfaces
TL;DR: The approach presented here is expected to be generally appropriate for first approximation of defect properties in semiconductors and dielectrics where the alloy is a random solid solution of the end members. (via Semantic Scholar)
Sources: Web Of Science, ORCID, NC State University Libraries
Added: March 2, 2021

2021 article

Native oxide reconstructions on AlN and GaN (0001) surfaces

Mirrielees, K. J., Dycus, J. H., Baker, J. N., Reddy, P., Collazo, R., Sitar, Z., … Irving, D. L. (2021, May 19). Journal of Applied Physics, Vol. 5.

By: K. Mirrielees n, J. Dycus n, J. Baker n, P. Reddy* , R. Collazo n , Z. Sitar n, J. LeBeau*, D. Irving n

Contributors: K. Mirrielees n, J. Dycus n, J. Baker n, P. Reddy* , R. Collazo n , Z. Sitar n, J. Lebeau*, D. Irving n

topics (OpenAlex): GaN-based semiconductor devices and materials; Semiconductor materials and devices; Ga2O3 and related materials
Sources: Web Of Science, NC State University Libraries, ORCID
Added: September 13, 2021

2021 article

Self-compensation in heavily Ge doped AlGaN: A comparison to Si doping

Washiyama, S., Mirrielees, K. J., Bagheri, P., Baker, J. N., Kim, J.-H., Guo, Q., … Sitar, Z. (2021, January 25). Applied Physics Letters, Vol. 118.

By: S. Washiyama n, K. Mirrielees n, P. Bagheri n, J. Baker n, J. Kim n, Q. Guo n, R. Kirste*, Y. Guan n ...

Contributors: S. Washiyama n, K. Mirrielees n, P. Bagheri n, J. Baker n, J. Kim n, Q. Guo n, R. Kirste*, Y. Guan n ...

topics (OpenAlex): GaN-based semiconductor devices and materials; Semiconductor materials and devices; Ga2O3 and related materials
Sources: Web Of Science, NC State University Libraries, ORCID
Added: March 29, 2021

2018 article

On compensation in Si-doped AlN

Harris, J. S., Baker, J. N., Gaddy, B. E., Bryan, I., Bryan, Z., Mirrielees, K. J., … Irving, D. L. (2018, April 9). Applied Physics Letters, Vol. 112.

By: J. Harris n, J. Baker n, B. Gaddy n, I. Bryan n, Z. Bryan n, K. Mirrielees n, P. Reddy* , R. Collazo n , Z. Sitar n, D. Irving n

Contributors: J. Harris n, J. Baker n, B. Gaddy n, I. Bryan n, Z. Bryan n, K. Mirrielees n, P. Reddy* , R. Collazo n , Z. Sitar n, D. Irving n

topics (OpenAlex): GaN-based semiconductor devices and materials; Ga2O3 and related materials; Semiconductor materials and devices
Sources: Web Of Science, ORCID, NC State University Libraries
Added: August 6, 2018

2018 article

Structure of Ultrathin Native Oxides on III–Nitride Surfaces

Dycus, J. H., Mirrielees, K. J., Grimley, E. D., Kirste, R., Mita, S., Sitar, Z., … LeBeau, J. M. (2018, March 20). ACS Applied Materials & Interfaces, Vol. 10, pp. 10607–10611.

By: J. Dycus  n, K. Mirrielees n, E. Grimley n, R. Kirste n, S. Mita n, Z. Sitar n, R. Collazo n , D. Irving n, J. LeBeau n

author keywords: ultrathin oxides; surface reconstructions; group III nitrides; scanning transmission electron microscopy; density functional theory
topics (OpenAlex): GaN-based semiconductor devices and materials; Ga2O3 and related materials; Semiconductor materials and devices
TL;DR: In this study, aberration corrected scanning transmission electron microscopy reveals directly, and with depth dependence, the structure of ultrathin native oxides that form on AlN and GaN surfaces, and shows that the oxide layers are comprised of tetrahedra-octahedra cation-oxygen units, in an arrangement similar to bulk θ-Al2O3 and β-Ga2 O3. (via Semantic Scholar)
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

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