Works (7)

Updated: April 5th, 2024 10:52

2022 journal article

Defect Chemistry of Halogen Dopants in ZnSe

JOURNAL OF PHYSICAL CHEMISTRY LETTERS, 13(35), 8380–8385.

By: Y. Wu n, K. Mirrielees n & D. Irving n

Source: Web Of Science
Added: November 7, 2022

2022 journal article

On native point defects in ZnSe

APPLIED PHYSICS LETTERS, 120(23).

By: Y. Wu n, K. Mirrielees n & D. Irving n

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: Web Of Science
Added: June 20, 2022

2021 journal article

Computational approaches to point defect simulations for semiconductor solid solution alloys

JOURNAL OF CHEMICAL PHYSICS, 154(9).

By: K. Mirrielees n, J. Baker n, P. Bowes n & D. Irving n

TL;DR: The approach presented here is expected to be generally appropriate for first approximation of defect properties in semiconductors and dielectrics where the alloy is a random solid solution of the end members. (via Semantic Scholar)
Sources: Web Of Science, ORCID
Added: March 2, 2021

2021 journal article

Native oxide reconstructions on AlN and GaN (0001) surfaces

JOURNAL OF APPLIED PHYSICS, 129(19).

By: K. Mirrielees n, J. Dycus n, J. Baker n, P. Reddy*, R. Collazo n, Z. Sitar n, J. LeBeau*, D. Irving n

Sources: Web Of Science, ORCID
Added: September 13, 2021

2021 journal article

Self-compensation in heavily Ge doped AlGaN: A comparison to Si doping

APPLIED PHYSICS LETTERS, 118(4).

By: S. Washiyama n, K. Mirrielees n, P. Bagheri n, J. Baker n, J. Kim n, Q. Guo n, R. Kirste*, Y. Guan n ...

Sources: Web Of Science, ORCID
Added: March 29, 2021

2018 journal article

On compensation in Si-doped AlN

APPLIED PHYSICS LETTERS, 112(15).

By: J. Harris n, J. Baker n, B. Gaddy n, I. Bryan n, Z. Bryan n, K. Mirrielees n, P. Reddy*, R. Collazo n, Z. Sitar n, D. Irving n

Sources: Web Of Science, ORCID
Added: August 6, 2018

2018 journal article

Structure of Ultrathin Native Oxides on III-Nitride Surfaces

ACS APPLIED MATERIALS & INTERFACES, 10(13), 10607–10611.

By: J. Dycus n, K. Mirrielees n, E. Grimley n, R. Kirste n, S. Mita n, Z. Sitar n, R. Collazo n, D. Irving n, J. LeBeau n

author keywords: ultrathin oxides; surface reconstructions; group III nitrides; scanning transmission electron microscopy; density functional theory
TL;DR: In this study, aberration corrected scanning transmission electron microscopy reveals directly, and with depth dependence, the structure of ultrathin native oxides that form on AlN and GaN surfaces, and shows that the oxide layers are comprised of tetrahedra-octahedra cation-oxygen units, in an arrangement similar to bulk θ-Al2O3 and β-Ga2 O3. (via Semantic Scholar)
Sources: Web Of Science, ORCID
Added: August 6, 2018

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