Robert M Kolbas

Bio-inspired spectropolarimetric sensor based on tandem organic photodetectors and multi-twist liquid crystals

OPTICS EXPRESS, 29(26), 43953–43969.

Mantis shrimp-inspired organic photodetector for simultaneous hyperspectral and polarimetric imaging

SCIENCE ADVANCES, 7(10).

Organic-based photodetectors for multiband spectral imaging

APPLIED OPTICS, 60(8), 2314–2323.

Application of deconvolution to recover frequency-domain multiplexed detector pulses

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 929, 57–65.

Frequency domain multiplexing of pulse mode radiation detectors

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 902, 117–122.

Stimulated emission and lasing from an Al0.13Ga0.87N∕GaN double heterostructure grown on a silicon substrate

Applied Physics Letters, 92(2), 021118.

Room temperature laser action from multiple bands in photoexcited GaN grown on a silicon substrate

Applied Physics Letters, 90(15), 151116.

Effect of thermal annealing on the metastable optical properties of GaN thin films

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 24(4), 1051–1054.

Optical and structural studies of hydride vapor phase epitaxy grown GaN

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 21(3), 701–705.

Electron-beam-induced optical memory effects in GaN

APPLIED PHYSICS LETTERS, 80(15), 2675–2677.

Er-doped AlGaAs native oxides: Photoluminescence characterization and process optimization

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 8(4), 880–890.

X-ray and Raman analyses of GaN produced by ultrahigh-rate magnetron sputter epitaxy

APPLIED PHYSICS LETTERS, 81(10), 1797–1799.

Optical characterization of wide band gap amorphous semiconductors (a-Si : C : H): Effect of hydrogen dilution

JOURNAL OF APPLIED PHYSICS, 89(2), 1130–1137.

Optical metastability of subband gap (2.2 eV) yellow luminescence in GaN

APPLIED PHYSICS LETTERS, 79(3), 281–283.

Photoluminescence and electrical characteristics of the two-dimensional electron gas in Si delta-doped GaN layers

APPLIED PHYSICS LETTERS, 78(12), 1688–1690.

Growth and characterization of GaN single crystals

JOURNAL OF CRYSTAL GROWTH, 208(1-4), 100–106.

Quantum confinement of E-1 and E-2 transitions in Ge quantum dots embedded in an Al2O3 or an AlN matrix

APPLIED PHYSICS LETTERS, 76(1), 43–45.

Quantum confinement of E1 and E2 transitions in Ge quantum dots embedded in Al203 or an AlN matrix

In T. S. J. Piqueras & M. S. Unlu (Eds.), Optical microstructural characterization of semiconductors (Materials Research Society proceedings, vol. 588). Pittsburgh, Pa.: Materials Research Society.

Size effect in germanium nanostructures fabricated by pulsed laser deposition

In S. K. H. Hahn & J. C. Parker (Eds.), Nanophase and Nanocomposite Materials III (Materials Research Society proceedings; vol. 581). Pittsburgh, Pa.: Materials Research Society.

Structural and optical property investigations on Mg-Alloying in epitaxial zinc oxide films on sapphire

Absorption coefficient and refractive index of GaN, AlN and AlGaN alloys

MRS Internet Journal of Nitride Semiconductor Research, 4S1(G5.2).

Effect of growth temperature on point defect density of unintentionally doped GaN grown by metalorganic chemical vapor deposition and hydride vapor phase epitaxy

JOURNAL OF APPLIED PHYSICS, 86(1), 281–288.

Excitonic structure and absorption coefficient measurements of ZnO single crystal epitaxial films deposited by pulsed laser deposition

JOURNAL OF APPLIED PHYSICS, 85(11), 7884–7887.

Linear optical properties of a heavily Mg-doped Al0.09Ga0.91N epitaxial layer

APPLIED PHYSICS LETTERS, 74(21), 3188–3190.

Optical and structural properties of epitaxial MgxZn1-xO alloys

APPLIED PHYSICS LETTERS, 75(21), 3327–3329.

Optical and structural studies of Ge nanocrystals embedded in AlN matrix fabricated by pulsed laser deposition

APPLIED PHYSICS LETTERS, 75(9), 1222–1224.

Optical information storage systems and methods using heterostructures comprising ternary group III-V nitride semiconductor materials

Washington, DC: U.S. Patent and Trademark Office.

Quantum confinement of above-band-bap transitions in Ge quantum dots embedded in an Al2O3 or AIN matrix

In T. S. J. Piqueras & M. S. Unlu (Eds.), Optical microstructural characterization of semiconductors (Materials Research Society proceedings, vol. 588). Pittsburgh, Pa.: Materials Research Society.

Germanium nanostructures fabricated by pulsed laser deposition

Microcrystalline and nanocrystalline semiconductors--1998: symposium held November 30-December 3, 1998, Boston, Massachusetts, U.S.A.

Growth of high quality single crystal ZnO films on sapphire by pulsed laser ablation

Advances in laser ablation of materials: Symposium held April 13-16, 1998, San Francisco, California, U.S.A. (Materials Research Society symposia proceedings ; v. 526)., 305. Warrendale, Pa.: Materials Research Society.

Microstructure and IR range optical properties of pure DLC and DLC containing dopants prepared by pulsed laser deposition

Advances in laser ablation of materials: Symposium held April 13-16, 1998, San Francisco, California, U.S.A. (Materials Research Society symposia proceedings ; v. 526)., 331. Warrendale, Pa.: Materials Research Society.

Optical and structural characterization of InGaN quantum-well heterostructures grown by metalorganic chemical vapor deposition

Compound semiconductors 1997: Proceedings of the IEEE Twenty-fourth International Symposium on Compound Semiconductors held in San Diego, California, 8-11 September 1997, 231–234. Bristol; Philadelphia: Institute of Physics Pub.

Optical metastability in InGaN/GaN heterostructures

Compound semiconductors 1997: Proceedings of the IEEE Twenty-fourth International Symposium on Compound Semiconductors held in San Diego, California, 8-11 September 1997, 375–378. Bristol; Philadelphia: Institute of Physics Pub.

Optical properties of wide bandgap II-V nitride semiconductors

In M. Zhang & K. N. Tu (Eds.), 1998 5th International Conference on Solid-State and Integrated Circuit Technology: Proceedings, October 21-23, 1998, Beijing, China (pp. 609–612).

Visible-blind GaN Schottky barrier detectors grown on Si(111)

APPLIED PHYSICS LETTERS, 72(5), 551–553.

Absorption coefficient, energy gap, exciton binding energy, and recombination lifetime of GaN obtained from transmission measurements

APPLIED PHYSICS LETTERS, 71(18), 2572–2574.

Growth of bulk InGaN films and quantum wells by atmospheric pressure metalorganic chemical vapour deposition

Keller, S., Keller, B. P., Kapolnek, D., Mishra, U. K., DenBaars, S. P., Shmagin, I. K., … Krishnankutty, S. (1997, January). JOURNAL OF CRYSTAL GROWTH, Vol. 170, pp. 349–352.

Microdisk laser structures formed in III-V nitride epilayers

Zavada, J. M., Abernathy, C. R., Pearton, S. J., Mackenzie, J. D., Mileham, JR, Wilson, R. G., … Kolbas, R. M. (1997, February). SOLID-STATE ELECTRONICS, Vol. 41, pp. 353–357.

Observation of lasing from photopumped InGaN/GaN heterostructures in an edge emitting configuration

JOURNAL OF APPLIED PHYSICS, 81(4), 2021–2023.

Optical data storage in InGaN/GaN heterostructures

APPLIED PHYSICS LETTERS, 71(10), 1382–1384.

Optical metastability in bulk GaN single crystals

APPLIED PHYSICS LETTERS, 71(4), 455–457.

Photoluminescence characteristics of GaN/InGaN/GaN quantum wells

Shmagin, I. K., Muth, J. F., Kolbas, R. M., Krishnankutty, S., Keller, S., Abare, A. C., … DenBaars, S. P. (1997, March). JOURNAL OF ELECTRONIC MATERIALS, Vol. 26, pp. 325–329.

Photoluminescence from mechanically milled Si and SiO2 powders

PHYSICAL REVIEW B, 55(12), 7615–7623.

Reconfigurable optical properties in InGaN/GaN quantum wells

APPLIED PHYSICS LETTERS, 71(11), 1455–1457.

Growth of bulk AIN and GaN single crystals by sublimation

III-V nitrides: symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A. (Materials Research Society symposia proceedings ; v. 449), 41–46. Pittsburgh, Pa.: Materials Research Society.

Quantum well heterostructure lasers

In M. R. Brozel & G. E. Stillman (Eds.), Properties of gallium arsenide (3rd ed.) (Datareviews series, no. 16) (pp. 887–905). INSPEC.

Stimulated emission and gain measurements from InGaN/GaN heterostructures

In III-V nitrides: Symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A.(Materials Research Society symposia proceedings ; v. 449) (pp. 1209–1214). Pittsburgh, Pa.: Materials Research Society.

Integrated quantum well lasers for wavelength division multiplexing

Washington, DC: U.S. Patent and Trademark Office.

Integrated quantum well lasers for wavelength division multiplexing

Washington, DC: U.S. Patent and Trademark Office.

Method of fabricating emitter/detector-in-a-well for the integration of electronic and optoelectronic components

Washington, DC: U.S. Patent and Trademark Office.