Robert Kolbas

Physics

Works (47)

2019 | journal article

Application of deconvolution to recover frequency-domain multiplexed detector pulses

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 929, 57–65.

By: M. Mishra, J. Mattingly & R. Kolbas

Source: Web Of Science
Added: April 29, 2019

2018 | journal article

Frequency domain multiplexing of pulse mode radiation detectors

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 902, 117–122.

By: M. Mishra, J. Mattingly, J. Mueller & R. Kolbas

Source: NC State University Libraries
Added: October 19, 2018

2008 | journal article

Stimulated emission and lasing from an Al0.13Ga0.87N/GaN double heterostructure grown on a silicon substrate

Applied Physics Letters, 92(2).

Source: NC State University Libraries
Added: August 6, 2018

2007 | journal article

Room temperature laser action from multiple bands in photoexcited GaN grown on a silicon substrate

Applied Physics Letters, 90(15).

Source: NC State University Libraries
Added: August 6, 2018

2006 | journal article

Effect of thermal annealing on the metastable optical properties of GaN thin films

Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 24(4), 1051–1054.

By: Y. Chang, R. Kolbas, Z. Reitmeier & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2003 | journal article

Optical and structural studies of hydride vapor phase epitaxy grown GaN

Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 21(3), 701–705.

By: Y. Chang, A. Cai, J. Muth, R. Kolbas, M. Park, J. Cuomo, A. Hanser, J. Bumgarner

Source: NC State University Libraries
Added: August 6, 2018

2002 | journal article

Electron-beam-induced optical memory effects in GaN

Applied Physics Letters, 80(15), 2675–2677.

Source: NC State University Libraries
Added: August 6, 2018

2002 | journal article

Er-doped AlGaAs native oxides: Photoluminescence characterization and process optimization

IEEE Journal of Selected Topics in Quantum Electronics, 8(4), 880–890.

By: L. Kou, D. Hall, C. Strohhofer, A. Polman, T. Zhang, R. Kolbas, R. Heller, R. Dupuis

Source: NC State University Libraries
Added: August 6, 2018

2002 | journal article

X-ray and Raman analyses of GaN produced by ultrahigh-rate magnetron sputter epitaxy

Applied Physics Letters, 81(10), 1797–1799.

By: M. Park, J. Maria, J. Cuomo, Y. Chang, J. Muth, R. Kolbas, R. Nemanich, E. Carlson, J. Bumgarner

Source: NC State University Libraries
Added: August 6, 2018

2001 | journal article

Optical characterization of wide band gap amorphous semiconductors (a-Si: C: H): Effect of hydrogen dilution

Journal of Applied Physics, 89(2), 1130–1137.

By: M. Park, C. Teng, V. Sakhrani, M. Mclaurin, R. Kolbas, R. Sanwald, R. Nemanich, J. Hren, J. Cuomo

Source: NC State University Libraries
Added: August 6, 2018

2001 | journal article

Optical metastability of subband gap (2.2 eV) yellow luminescence in GaN

Applied Physics Letters, 79(3), 281–283.

By: Y. Chang, A. Oberhofer, J. Muth, R. Kolbas & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2001 | journal article

Photoluminescence and electrical characteristics of the two-dimensional electron gas in Si delta-doped GaN layers

Applied Physics Letters, 78(12), 1688–1690.

By: C. Teng, M. Aboelfotoh, R. Davis, J. Muth & R. Kolbas

Source: NC State University Libraries
Added: August 6, 2018

2000 | journal article

Growth and characterization of GaN single crystals

Journal of Crystal Growth, 208(1-4), 100–106.

By: C. Balkas, Z. Sitar, L. Bergman, I. Shmagin, J. Muth, R. Kolbas, R. Nemanich, R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2000 | journal article

Quantum confinement of E-1 and E-2 transitions in Ge quantum dots embedded in an Al2O3 or an AlN matrix

Applied Physics Letters, 76(1), 43–45.

Source: NC State University Libraries
Added: August 6, 2018

2000 | conference paper

Quantum confinement of E1 and E2 transitions in Ge quantum dots embedded in Al203 or an AlN matrix

In Optical microstructural characterization of semiconductors (Materials Research Society proceedings, vol. 588). Pittsburgh, Pa.: Materials Research Society.

Source: NC State University Libraries
Added: August 6, 2018

2000 | conference paper

Size effect in germanium nanostructures fabricated by pulsed laser deposition

In Nanophase and Nanocomposite Materials III (Materials Research Society proceedings; vol. 581). Pittsburgh, Pa.: Materials Research Society.

Source: NC State University Libraries
Added: August 6, 2018

2000 | conference paper

Structural and optical property investigations on Mg-Alloying in epitaxial zinc oxide films on sapphire

In MRS Internet Journal of Nitride Semiconductor Research.

By: A. Sharma, C. Jin, J. Narayan, C. Teng, J. Muth, R. Kolbas, O. Holland

Source: NC State University Libraries
Added: August 6, 2018

1999 | journal article

Absorption coefficient and refractive index of GaN, AlN and AlGaN alloys

MRS Internet Journal of Nitride Semiconductor Research, 4S1(G5.2).

Source: NC State University Libraries
Added: August 6, 2018

1999 | journal article

Effect of growth temperature on point defect density of unintentionally doped GaN grown by metalorganic chemical vapor deposition and hydride vapor phase epitaxy

Journal of Applied Physics, 86(1), 281–288.

By: V. Joshkin, C. Parker, S. Bedair, J. Muth, I. Shmagin, R. Kolbas, E. Piner, R. Molnar

Source: NC State University Libraries
Added: August 6, 2018

1999 | journal article

Excitonic structure and absorption coefficient measurements of ZnO single crystal epitaxial films deposited by pulsed laser deposition

Journal of Applied Physics, 85(11), 7884–7887.

By: J. Muth, R. Kolbas, A. Sharma, S. Oktyabrsky & J. Narayan

Source: NC State University Libraries
Added: August 6, 2018

1999 | journal article

Linear optical properties of a heavily Mg-doped Al0.09Ga0.91N epitaxial layer

Applied Physics Letters, 74(21), 3188–3190.

By: M. Bergmann, U. Ozgur, H. Casey, J. Muth, Y. Chang, R. Kolbas, R. Rao, C. Eom, M. Schurman

Source: NC State University Libraries
Added: August 6, 2018

1999 | journal article

Optical and structural properties of epitaxial MgxZn1-xO alloys

Applied Physics Letters, 75(21), 3327–3329.

By: A. Sharma, J. Narayan, J. Muth, C. Teng, C. Jin, A. Kvit, R. Kolbas, O. Holland

Source: NC State University Libraries
Added: August 6, 2018

1999 | journal article

Optical and structural studies of Ge nanocrystals embedded in AlN matrix fabricated by pulsed laser deposition

Applied Physics Letters, 75(9), 1222–1224.

Source: NC State University Libraries
Added: August 6, 2018

1999 | patent

Optical information storage systems and methods using heterostructures comprising ternary group III-V nitride semiconductor materials

Shmagin, I. K., Muth, J. F., & Kolbas, R. M. (1999, February 23). Washington, DC: U.S. Patent and Trademark Office.

By: I. Shmagin, J. Muth & R. Kolbas

Source: NC State University Libraries
Added: August 6, 2018

1999 | conference paper

Quantum confinement of above-band-bap transitions in Ge quantum dots embedded in an Al2O3 or AIN matrix

In Optical microstructural characterization of semiconductors (Materials Research Society proceedings, vol. 588). Pittsburgh, Pa.: Materials Research Society.

Source: NC State University Libraries
Added: August 6, 2018

1998 | conference paper

Germanium nanostructures fabricated by pulsed laser deposition

In Microcrystalline and nanocrystalline semiconductors--1998: symposium held November 30-December 3, 1998, Boston, Massachusetts, U.S.A.

Source: NC State University Libraries
Added: August 6, 2018

1998 | conference paper

Growth of high quality single crystal ZnO films on sapphire by pulsed laser ablation

In Advances in laser ablation of materials: Symposium held April 13-16, 1998, San Francisco, California, U.S.A. (Materials Research Society symposia proceedings ; v. 526). (p. 305). Warrendale, Pa.: Materials Research Society.

By: A. Sharma, K. Dovidenko, S. Oktyabrsky, D. Moxey, J. Muth, R. Kolbas, J. Narayan

Source: NC State University Libraries
Added: August 6, 2018

1998 | conference paper

Microstructure and IR range optical properties of pure DLC and DLC containing dopants prepared by pulsed laser deposition

In Advances in laser ablation of materials: Symposium held April 13-16, 1998, San Francisco, California, U.S.A. (Materials Research Society symposia proceedings ; v. 526). (p. 331). Warrendale, Pa.: Materials Research Society.

By: Q. Wei, A. Sharma, R. Narayan, N. Ravindra, S. Oktyabrsky, J. Sankar, J. Muth, R. Kolbas, J. Narayan

Source: NC State University Libraries
Added: August 6, 2018

1998 | conference paper

Optical and structural characterization of InGaN quantum-well heterostructures grown by metalorganic chemical vapor deposition

In Compound semiconductors 1997: Proceedings of the IEEE Twenty-fourth International Symposium on Compound Semiconductors held in San Diego, California, 8-11 September 1997 (pp. 231–234). Bristol; Philadelphia: Institute of Physics Pub.

By: R. Dupuis, P. Grudowski, C. Eiting, I. Shmagin, R. Kolbas & S. Rosner

Source: NC State University Libraries
Added: August 6, 2018

1998 | conference paper

Optical metastability in InGaN/GaN heterostructures

In Compound semiconductors 1997: Proceedings of the IEEE Twenty-fourth International Symposium on Compound Semiconductors held in San Diego, California, 8-11 September 1997 (pp. 375–378). Bristol; Philadelphia: Institute of Physics Pub.

By: I. Shmagin, J. Muth, R. Kolbas, R. Dupuis, P. Grudowski, C. Eiting, J. Park, B. Shelton, D. Lambert

Source: NC State University Libraries
Added: August 6, 2018

1998 | conference paper

Optical properties of wide bandgap II-V nitride semiconductors

In 1998 5th International Conference on Solid-State and Integrated Circuit Technology: Proceedings, October 21-23, 1998, Beijing, China (pp. 609–612).

By: R. Kolbas, I. Shmagin & J. Muth

Source: NC State University Libraries
Added: August 6, 2018

1998 | journal article

Visible-blind GaN Schottky barrier detectors grown on Si(111)

Applied Physics Letters, 72(5), 551–553.

By: A. Osinsky, S. Gangopadhyay, J. Yang, R. Gaska, D. Kuksenkov, H. Temkin, I. Shmagin, Y. Chang, J. Muth, R. Kolbas

Source: NC State University Libraries
Added: August 6, 2018

1997 | journal article

Absorption coefficient, energy gap, exciton binding energy, and recombination lifetime of GaN obtained from transmission measurements

Applied Physics Letters, 71(18), 2572–2574.

By: J. Muth, J. Lee, I. Shmagin, R. Kolbas, H. Casey, B. Keller, U. Mishra, S. Denbaars

Source: NC State University Libraries
Added: August 6, 2018

1997 | journal article

Growth of bulk InGaN films and quantum wells by atmospheric pressure metalorganic chemical vapour deposition

Journal of Crystal Growth, 170(1-4), 349–352.

By: S. Keller, B. Keller, D. Kapolnek, U. Mishra, S. Denbaars, I. Shmagin, R. Kolbas, S. Krishnankutty

Source: NC State University Libraries
Added: August 6, 2018

1997 | journal article

Microdisk laser structures formed in III-V nitride epilayers

Solid-State Electronics, 41(2), 353–357.

By: J. Zavada, C. Abernathy, S. Pearton, J. MacKenzie, J. Mileham, R. Wilson, R. Schwartz, M. Crawford ...

Source: NC State University Libraries
Added: August 6, 2018

1997 | journal article

Observation of lasing from photopumped InGaN/GaN heterostructures in an edge emitting configuration

Journal of Applied Physics, 81(4), 2021–2023.

By: I. Shmagin, J. Muth, R. Kolbas, S. Krishnankutty, S. Keller, U. Mishra, S. DenBaars

Source: NC State University Libraries
Added: August 6, 2018

1997 | journal article

Optical data storage in InGaN/GaN heterostructures

Applied Physics Letters, 71(10), 1382–1384.

By: I. Shmagin, J. Muth, R. Kolbas, R. Dupuis, P. Grudowski, C. Eiting, J. Park, B. Shelton, D. Lambert

Source: NC State University Libraries
Added: August 6, 2018

1997 | journal article

Optical metastability in bulk GaN single crystals

Applied Physics Letters, 71(4), 455–457.

Source: NC State University Libraries
Added: August 6, 2018

1997 | journal article

Photoluminescence characteristics of GaN/InGaN/GaN quantum wells

Journal of Electronic Materials, 26(3), 325–329.

By: I. Shmagin, J. Muth, R. Kolbas, S. Krishnankutty, S. Keller, A. Abare, L. Coldren, U. Mishra, S. DenBaars

Source: NC State University Libraries
Added: August 6, 2018

1997 | journal article

Photoluminescence from mechanically milled Si and SiO(2) powders

Physical Review. B, Condensed Matter and Materials Physics, 55(12), 7615–7623.

Source: NC State University Libraries
Added: August 6, 2018

1997 | journal article

Reconfigurable optical properties in InGaN/GaN quantum wells

Applied Physics Letters, 71(11), 1455–1457.

By: I. Shmagin, J. Muth, R. Kolbas, M. Mack, A. Abare, S. Keller, L. Coldren, U. Mishra, S. DenBaars

Source: NC State University Libraries
Added: August 6, 2018

1996 | conference paper

Growth of bulk AIN and GaN single crystals by sublimation

In III-V nitrides: symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A. (Materials Research Society symposia proceedings ; v. 449) (pp. 41–46). Pittsburgh, Pa.: Materials Research Society.

Source: NC State University Libraries
Added: August 6, 2018

1996 | chapter

Quantum well heterostructure lasers

In Properties of gallium arsenide (3rd ed.) (Datareviews series, no. 16) (pp. 887–905). INSPEC.

By: R. Kolbas

Source: NC State University Libraries
Added: August 6, 2018

1996 | chapter

Stimulated emission and gain measurements from InGaN/GaN heterostructures

In III-V nitrides: Symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A.(Materials Research Society symposia proceedings ; v. 449) (pp. 1209–1214). Pittsburgh, Pa.: Materials Research Society.

By: I. Shmagin, J. Muth, R. Kolbas, S. Krishnankkutty, S. Keller, U. Mishra, S. DenBaars

Source: NC State University Libraries
Added: August 6, 2018

1987 | patent

Integrated quantum well lasers for wavelength division multiplexing

Washington, DC: U.S. Patent and Trademark Office.

By: J. Carney & R. Kolbas

Source: NC State University Libraries
Added: August 6, 2018

1986 | patent

Integrated quantum well lasers for wavelength division multiplexing

Washington, DC: U.S. Patent and Trademark Office.

By: J. Carney & R. Kolbas

Source: NC State University Libraries
Added: August 6, 2018

1985 | patent

Method of fabricating emitter/detector-in-a-well for the integration of electronic and optoelectronic components

Washington, DC: U.S. Patent and Trademark Office.

By: R. Kolbas

Source: NC State University Libraries
Added: August 6, 2018