Robert Kolbas

Altaqui, A., Schrickx, H., Sen, P., Li, L., Rech, J., Lee, J.-W., … Kudenov, M. (2021). Bio-inspired spectropolarimetric sensor based on tandem organic photodetectors and multi-twist liquid crystals. OPTICS EXPRESS, 29(26), 43953–43969. https://doi.org/10.1364/OE.431858

Altaqui, A., Sen, P., Schrickx, H., Rech, J., Lee, J.-W., Escuti, M., … Kudenov, M. (2021). Mantis shrimp-inspired organic photodetector for simultaneous hyperspectral and polarimetric imaging. SCIENCE ADVANCES, 7(10). https://doi.org/10.1126/sciadv.abe3196

Altaqui, A., Kolbas, R. M., Escuti, M. J., Brendan T. O'Connor, & Kudenov, M. W. (2021). Organic-based photodetectors for multiband spectral imaging. APPLIED OPTICS, 60(8), 2314–2323. https://doi.org/10.1364/AO.417069

Mishra, M., Mattingly, J., & Kolbas, R. M. (2019). Application of deconvolution to recover frequency-domain multiplexed detector pulses. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 929, 57–65. https://doi.org/10.1016/j.nima.2019.03.043

Mishra, M., Mattingly, J., Mueller, J. M., & Kolbas, R. M. (2018). Frequency domain multiplexing of pulse mode radiation detectors. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 902, 117–122. https://doi.org/10.1016/j.nima.2018.06.023

Al-Ajmi, F. S., Kolbas, R. M., Roberts, J. C., Rajagopal, P., Cook, J. W., Jr., Piner, E. L., & Linthicum, K. J. (2008). Stimulated emission and lasing from an Al0.13Ga0.87N∕GaN double heterostructure grown on a silicon substrate. Applied Physics Letters, 92(2), 021118. https://doi.org/10.1063/1.2819614

Al-Ajmi, F. S., Kolbas, R. M., Roberts, J. C., Rajagopal, P., Cook, J. W., Jr., Piner, E. L., & Linthicum, K. J. (2007). Room temperature laser action from multiple bands in photoexcited GaN grown on a silicon substrate. Applied Physics Letters, 90(15), 151116. https://doi.org/10.1063/1.2722201

Chang, Y. C., Kolbas, R. M., Reitmeier, Z. J., & Davis, R. F. (2006). Effect of thermal annealing on the metastable optical properties of GaN thin films. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 24(4), 1051–1054. https://doi.org/10.1116/1.2209656

Chang, Y. C., Cai, A. L., Muth, J. F., Kolbas, R. M., Park, M., Cuomo, J. J., … Bumgarner, J. (2003). Optical and structural studies of hydride vapor phase epitaxy grown GaN. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 21(3), 701–705. https://doi.org/10.1116/1.1568346

Chang, Y. C., Cai, A. L., Johnson, M. A. L., Muth, J. F., Kolbas, R. M., Reitmeier, Z. J., … Davis, R. F. (2002). Electron-beam-induced optical memory effects in GaN. APPLIED PHYSICS LETTERS, 80(15), 2675–2677. https://doi.org/10.1063/1.1469222

Kou, L. G., Hall, D. C., Strohhofer, C., Polman, A., Zhang, T., Kolbas, R. M., … Dupuis, R. D. (2002). Er-doped AlGaAs native oxides: Photoluminescence characterization and process optimization. IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 8(4), 880–890. https://doi.org/10.1109/JSTQE.2002.801689

Park, M., Maria, J. P., Cuomo, J. J., Chang, Y. C., Muth, J. F., Kolbas, R. M., … Bumgarner, J. (2002). X-ray and Raman analyses of GaN produced by ultrahigh-rate magnetron sputter epitaxy. APPLIED PHYSICS LETTERS, 81(10), 1797–1799. https://doi.org/10.1063/1.1506781

Park, M., Teng, C. W., Sakhrani, V., McLaurin, M. B., Kolbas, R. M., Sanwald, R. C., … Cuomo, J. J. (2001). Optical characterization of wide band gap amorphous semiconductors (a-Si : C : H): Effect of hydrogen dilution. JOURNAL OF APPLIED PHYSICS, 89(2), 1130–1137. https://doi.org/10.1063/1.1332421

Chang, Y. C., Oberhofer, A. E., Muth, J. F., Kolbas, R. M., & Davis, R. F. (2001). Optical metastability of subband gap (2.2 eV) yellow luminescence in GaN. APPLIED PHYSICS LETTERS, 79(3), 281–283. https://doi.org/10.1063/1.1381417

Teng, C. W., Aboelfotoh, M. O., Davis, R. F., Muth, J. F., & Kolbas, R. M. (2001). Photoluminescence and electrical characteristics of the two-dimensional electron gas in Si delta-doped GaN layers. APPLIED PHYSICS LETTERS, 78(12), 1688–1690. https://doi.org/10.1063/1.1353836

Balkas, C. M., Sitar, Z., Bergman, L., Shmagin, I. K., Muth, J. F., Kolbas, R., … Davis, R. F. (2000). Growth and characterization of GaN single crystals. JOURNAL OF CRYSTAL GROWTH, 208(1-4), 100–106. https://doi.org/10.1016/S0022-0248(99)00445-5

Teng, C. W., Muth, J. F., Kolbas, R. M., Hassan, K. M., Sharma, A. K., Kvit, A., & Narayan, J. (2000). Quantum confinement of E-1 and E-2 transitions in Ge quantum dots embedded in an Al2O3 or an AlN matrix. APPLIED PHYSICS LETTERS, 76(1), 43–45. https://doi.org/10.1063/1.125650

Teng, C. W., Muth, J. F., Kolbas, R. M., Hassan, K. M., Sharma, A. K., & Narayan, J. (2000). Quantum confinement of E1 and E2 transitions in Ge quantum dots embedded in Al203 or an AlN matrix. In T. S. J. Piqueras & M. S. Unlu (Eds.), Optical microstructural characterization of semiconductors  (Materials Research Society proceedings, vol. 588). Pittsburgh, Pa.: Materials Research Society.

Hassan, K. M., Sharma, A. K., Narayan, J., Muth, J. F., Teng, C. W., & Kolbas, R. M. (2000). Size effect in germanium nanostructures fabricated by pulsed laser deposition. In S. K. H. Hahn & J. C. Parker (Eds.), Nanophase and Nanocomposite Materials III  (Materials Research Society proceedings; vol. 581). Pittsburgh, Pa.: Materials Research Society.

Sharma, A. K., Jin, C., Narayan, J., Teng, C. W., Muth, J. F., Kolbas, R. M., & Holland, O. W. (2000). Structural and optical property investigations on Mg-Alloying in epitaxial zinc oxide films on sapphire. MRS Internet Journal of Nitride Semiconductor Research, (2000).

Muth, J. F., Brown, J. D., Johnson, M. A. L., Yu, Z. H., Kolbas, R. M., Cook, J. W., & Schetzina, J. F. (1999). Absorption coefficient and refractive index of GaN, AlN and AlGaN alloys. MRS Internet Journal of Nitride Semiconductor Research, 4S1(G5.2).

Joshkin, V. A., Parker, C. A., Bedair, S. M., Muth, J. F., Shmagin, I. K., Kolbas, R. M., … Molnar, R. J. (1999). Effect of growth temperature on point defect density of unintentionally doped GaN grown by metalorganic chemical vapor deposition and hydride vapor phase epitaxy. JOURNAL OF APPLIED PHYSICS, 86(1), 281–288. https://doi.org/10.1063/1.370727

Muth, J. F., Kolbas, R. M., Sharma, A. K., Oktyabrsky, S., & Narayan, J. (1999). Excitonic structure and absorption coefficient measurements of ZnO single crystal epitaxial films deposited by pulsed laser deposition. JOURNAL OF APPLIED PHYSICS, 85(11), 7884–7887. https://doi.org/10.1063/1.370601

Bergmann, M. J., Ozgur, U., Casey, H. C., Muth, J. F., Chang, Y. C., Kolbas, R. M., … Schurman, M. (1999). Linear optical properties of a heavily Mg-doped Al0.09Ga0.91N epitaxial layer. APPLIED PHYSICS LETTERS, 74(21), 3188–3190. https://doi.org/10.1063/1.124102

Sharma, A. K., Narayan, J., Muth, J. F., Teng, C. W., Jin, C., Kvit, A., … Holland, O. W. (1999). Optical and structural properties of epitaxial MgxZn1-xO alloys. APPLIED PHYSICS LETTERS, 75(21), 3327–3329. https://doi.org/10.1063/1.125340

Hassan, K. M., Sharma, A. K., Narayan, J., Muth, J. F., Teng, C. W., & Kolbas, R. M. (1999). Optical and structural studies of Ge nanocrystals embedded in AlN matrix fabricated by pulsed laser deposition. APPLIED PHYSICS LETTERS, 75(9), 1222–1224. https://doi.org/10.1063/1.124648

Shmagin, I. K., Muth, J. F., & Kolbas, R. M. (1999). Optical information storage systems and methods using heterostructures comprising ternary group III-V nitride semiconductor materials. Washington, DC: U.S. Patent and Trademark Office.

Teng, C. W., Muth, J. F., Kolbas, R. M., Hassan, K. M., Sharma, A. K., Kvit, A., & Narayan, J. (1999). Quantum confinement of above-band-bap transitions in Ge quantum dots embedded in an Al2O3 or AIN matrix. In T. S. J. Piqueras & M. S. Unlu (Eds.), Optical microstructural characterization of semiconductors  (Materials Research Society proceedings, vol. 588). Pittsburgh, Pa.: Materials Research Society.

Hassan, K. M., Sharma, A. K., Narayan, J., Muth, J. F., Teng, C. W., & Kolbas, R. M. (1998). Germanium nanostructures fabricated by pulsed laser deposition. Microcrystalline and nanocrystalline semiconductors--1998: symposium held November 30-December 3, 1998, Boston, Massachusetts, U.S.A.

Sharma, A. K., Dovidenko, K., Oktyabrsky, S., Moxey, D. E., Muth, J. F., Kolbas, R. M., & Narayan, J. (1998). Growth of high quality single crystal ZnO films on sapphire by pulsed laser ablation. Advances in laser ablation of materials: Symposium held April 13-16, 1998, San Francisco, California, U.S.A.  (Materials Research Society symposia proceedings ; v. 526)., 305. Warrendale, Pa.: Materials Research Society.

Wei, Q., Sharma, A. K., Narayan, R. J., Ravindra, N. M., Oktyabrsky, S., Sankar, J., … Narayan, J. (1998). Microstructure and IR range optical properties of pure DLC and DLC containing dopants prepared by pulsed laser deposition. Advances in laser ablation of materials: Symposium held April 13-16, 1998, San Francisco, California, U.S.A.  (Materials Research Society symposia proceedings ; v. 526)., 331. Warrendale, Pa.: Materials Research Society.

Dupuis, R. D., Grudowski, P. A., Eiting, C. J., Shmagin, I. K., Kolbas, R. M., & Rosner, S. J. (1998). Optical and structural characterization of InGaN quantum-well heterostructures grown by metalorganic chemical vapor deposition. Compound semiconductors 1997: Proceedings of the IEEE Twenty-fourth International Symposium on Compound Semiconductors held in San Diego, California, 8-11 September 1997, 231–234. Bristol; Philadelphia: Institute of Physics Pub.

Shmagin, I. K., Muth, J. F., Kolbas, R. M., Dupuis, R. D., Grudowski, P. A., Eiting, C. J., … Lambert, D. J. H. (1998). Optical metastability in InGaN/GaN heterostructures. Compound semiconductors 1997: Proceedings of the IEEE Twenty-fourth International Symposium on Compound Semiconductors held in San Diego, California, 8-11 September 1997, 375–378. Bristol; Philadelphia: Institute of Physics Pub.

Kolbas, R. M., Shmagin, I. K., & Muth, J. F. (1998). Optical properties of wide bandgap II-V nitride semiconductors. In M. Zhang & K. N. Tu (Eds.), 1998 5th International Conference on Solid-State and Integrated Circuit Technology: Proceedings, October 21-23, 1998, Beijing, China (pp. 609–612).

Osinsky, A., Gangopadhyay, S., Yang, J. W., Gaska, R., Kuksenkov, D., Temkin, H., … Kolbas, R. M. (1998). Visible-blind GaN Schottky barrier detectors grown on Si(111). APPLIED PHYSICS LETTERS, 72(5), 551–553. https://doi.org/10.1063/1.120755

Muth, J. F., Lee, J. H., Shmagin, I. K., Kolbas, R. M., Casey, H. C., Keller, B. P., … DenBaars, S. P. (1997). Absorption coefficient, energy gap, exciton binding energy, and recombination lifetime of GaN obtained from transmission measurements. APPLIED PHYSICS LETTERS, 71(18), 2572–2574. https://doi.org/10.1063/1.120191

Keller, S., Keller, B. P., Kapolnek, D., Mishra, U. K., DenBaars, S. P., Shmagin, I. K., … Krishnankutty, S. (1997, January). Growth of bulk InGaN films and quantum wells by atmospheric pressure metalorganic chemical vapour deposition. JOURNAL OF CRYSTAL GROWTH, Vol. 170, pp. 349–352. https://doi.org/10.1016/S0022-0248(96)00553-2

Zavada, J. M., Abernathy, C. R., Pearton, S. J., Mackenzie, J. D., Mileham, JR, Wilson, R. G., … Kolbas, R. M. (1997, February). Microdisk laser structures formed in III-V nitride epilayers. SOLID-STATE ELECTRONICS, Vol. 41, pp. 353–357. https://doi.org/10.1016/S0038-1101(96)00244-4

Shmagin, I. K., Muth, J. F., Kolbas, R. M., Krishnankutty, S., Keller, S., Mishra, U. K., & DenBaars, S. P. (1997). Observation of lasing from photopumped InGaN/GaN heterostructures in an edge emitting configuration. JOURNAL OF APPLIED PHYSICS, 81(4), 2021–2023. https://doi.org/10.1063/1.364058

Shmagin, I. K., Muth, J. F., Kolbas, R. M., Dupuis, R. D., Grudowski, P. A., Eiting, C. J., … Lambert, D. J. H. (1997). Optical data storage in InGaN/GaN heterostructures. APPLIED PHYSICS LETTERS, 71(10), 1382–1384. https://doi.org/10.1063/1.119900

Shmagin, I. K., Muth, J. F., Lee, J. H., Kolbas, R. M., Balkas, C. M., Sitar, Z., & Davis, R. F. (1997). Optical metastability in bulk GaN single crystals. APPLIED PHYSICS LETTERS, 71(4), 455–457. https://doi.org/10.1063/1.119577

Shmagin, I. K., Muth, J. F., Kolbas, R. M., Krishnankutty, S., Keller, S., Abare, A. C., … DenBaars, S. P. (1997, March). Photoluminescence characteristics of GaN/InGaN/GaN quantum wells. JOURNAL OF ELECTRONIC MATERIALS, Vol. 26, pp. 325–329. https://doi.org/10.1007/s11664-997-0172-y

Shen, T. D., Shmagin, I., Koch, C. C., Kolbas, R. M., Fahmy, Y., Bergman, L., … Quan, M. X. (1997). Photoluminescence from mechanically milled Si and SiO2 powders. PHYSICAL REVIEW B, 55(12), 7615–7623. https://doi.org/10.1103/physrevb.55.7615

Shmagin, I. K., Muth, J. F., Kolbas, R. M., Mack, M. P., Abare, A. C., Keller, S., … DenBaars, S. P. (1997). Reconfigurable optical properties in InGaN/GaN quantum wells. APPLIED PHYSICS LETTERS, 71(11), 1455–1457. https://doi.org/10.1063/1.119935

Balkas, C. M., Sitar, Z., Zheleva, T., Bergman, L., Shmagin, I. K., Muth, J. F., … Davis, R. F. (1996). Growth of bulk AIN and GaN single crystals by sublimation. III-V nitrides: symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A.  (Materials Research Society symposia proceedings ; v. 449), 41–46. Pittsburgh, Pa.: Materials Research Society.

Kolbas, R. M. (1996). Quantum well heterostructure lasers. In M. R. Brozel & G. E. Stillman (Eds.), Properties of gallium arsenide (3rd ed.) (Datareviews series, no. 16) (pp. 887–905). INSPEC.

Shmagin, I. K., Muth, J. F., Kolbas, R. M., Krishnankkutty, S., Keller, S., Mishra, U. K., & DenBaars, S. P. (1996). Stimulated emission and gain measurements from InGaN/GaN heterostructures. In III-V nitrides: Symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A.(Materials Research Society symposia proceedings ; v. 449) (pp. 1209–1214). Pittsburgh, Pa.: Materials Research Society.

Carney, J. K., & Kolbas, R. M. (1987). Integrated quantum well lasers for wavelength division multiplexing. Washington, DC: U.S. Patent and Trademark Office.

Carney, J. K., & Kolbas, R. M. (1986). Integrated quantum well lasers for wavelength division multiplexing. Washington, DC: U.S. Patent and Trademark Office.

Kolbas, R. M. (1985). Method of fabricating emitter/detector-in-a-well for the integration of electronic and optoelectronic components. Washington, DC: U.S. Patent and Trademark Office.