Ki Wook Kim

Electronic properties of c-BN/diamond heterostructures for high-frequency high-power applications

DIAMOND AND RELATED MATERIALS, 143.

Search for an antiferromagnetic Weyl semimetal in (MnTe)_<i>m</i>(Sb₂Te₃)_<i>n</i> and (MnTe)_<i>m</i>(Bi₂Te₃)_<i>n</i> superlattices

JOURNAL OF PHYSICS-CONDENSED MATTER, 36(40).

Voltage control of electromagnetic properties in antiferromagnetic materials

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 57(24).

Electrical control of Dzyaloshinskii-Moriya interactions in magnetic Weyl semimetals

PHYSICAL REVIEW B, 108(13).

Electrical control of antiferromagnetic domain walls in Weyl semimetals

PHYSICAL REVIEW B, 107(9).

Carrier-induced ferromagnetism in two-dimensional magnetically doped semiconductor structures

PHYSICAL REVIEW B, 104(9).

Domains of electrically induced valley polarization in two-dimensional Dirac semiconductors

PHYSICAL REVIEW B, 104(7).

Scalable Characterization of 2D Gallium-Intercalated Epitaxial Graphene

ACS APPLIED MATERIALS & INTERFACES, 13(46), 55428–55439.

Spin-transfer and fieldlike torques in antiferromagnets

PHYSICAL REVIEW B, 104(17).

Efficient Control of Stochastic Switching via Spin Pumping in Antiferromagnetic Structures

PHYSICAL REVIEW APPLIED, 13(6).

First-principles analysis of magnetically doped transition-metal dichalcogenides

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 54(2).

Modeling of Antiferromagnetic Dynamics: A Brief Review

[Review of ]. IEEE NANOTECHNOLOGY MAGAZINE, 14(6), 32–41.

Optical bistability and self-opacity in magnetically doped monolayer transition metal dichalcogenides

PHYSICAL REVIEW B, 102(21).

Spin wave generation via localized spin-orbit torque in an antiferromagnet-topological insulator heterostructure

JOURNAL OF APPLIED PHYSICS, 128(4).

Controllable Dispersion of Domain-Wall Movement in Antiferromagnetic Thin Films at Finite Temperatures

PHYSICAL REVIEW APPLIED, 11(6).

Creation and Destruction of Skyrmions via Electrical Modulation of Local Magnetic Anisotropy in Magnetic Thin Films

PHYSICAL REVIEW APPLIED, 11(2).

Electrical generation and propagation of spin waves in antiferromagnetic thin-film nanostrips

APPLIED PHYSICS LETTERS, 114(23).

Nanoscale ballistic diodes made of polar materials for amplification and generation of radiation in the 10 THz-range

JOURNAL OF APPLIED PHYSICS, 126(8).

Thermal fluctuations in antiferromagnetic nanostructures

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 489.

Voltage Control of Antiferromagnetic Phases at Near-Terahertz Frequencies

Physical Review Applied, 9(3).

Conductance nonreciprocity on the surface of a topological insulator with magnetic electrodes

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 128, 196–201.

Currentless reversal of Néel vector in antiferromagnets

Physical Review B, 95(1).

Doping induced enhanced density of states in bismuth telluride

Applied Physics Letters, 111(23), 232101.

Electrical switching of antiferromagnets via strongly spin-orbit coupled materials

Journal of Applied Physics, 121(2), 023907.

Helical waves in easy-plane antiferromagnets

Physical Review B, 96(22).

Spin pumping torque in antiferromagnets

Applied Physics Letters, 110(19), 192405.

Toward enhanced thermoelectric effects in Bi2Te3/Sb2Te3heterostructures

Semiconductor Science and Technology, 32(3), 035005.

Atomistic modeling of phonon transport in turbostratic graphitic structures

Journal of Applied Physics, 119(20), 204305.

Bias-driven spontaneous spin-valley polarization in monolayer transition-metal dichalcogenides

Physical Review B, 93(4).

Electrically controlled switching of antiferromagnets via proximity interaction induced by topological insulator

2016 74th Annual Device Research Conference (DRC). Presented at the 2016 74th Annual Device Research Conference (DRC).

Highly anisotropic electronic transport properties of monolayer and bilayer phosphorene from first principles

Applied Physics Letters, 109(5), 053108.

Highly efficient conductance control in a topological insulator based magnetoelectric transistor

Journal of Applied Physics, 118(22), 224502.

Nonlinear magnetic dynamics in a nanomagnet–topological insulator heterostructure

Physical Review B, 92(11).

Spatially dispersive dynamical response of hot carriers in doped graphene

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 79, 26–37.

Strain induced room temperature ferromagnetism in epitaxial magnesium oxide thin films

Journal of Applied Physics, 118(16), 165309.

Controlling electron propagation on a topological insulator surface via proximity interactions

Physical Review B, 89(4).

Equally Efficient Interlayer Exciton Relaxation and Improved Absorption in Epitaxial and Nonepitaxial MoS2/WS2 Heterostructures

Nano Letters, 15(1), 486–491.

Exciton valley relaxation in a single layer ofWS2measured by ultrafast spectroscopy

Physical Review B, 90(4).

Hot-Electron Transistors for Terahertz Operation Based on Two-Dimensional Crystal Heterostructures

Physical Review Applied, 2(5).

Intrinsic transport properties of electrons and holes in monolayer transition-metal dichalcogenides

Physical Review B, 90(4).

Proposal of a topological insulator based magnetoelectric transistor

2014 72nd annual device research conference (drc), 149–150.

Quasi-optical electron transport across a magnetically induced junction on a topological insulator surface

Journal of Applied Physics, 116(22), 224301.

Spin Logic via Controlled Correlation in Nanomagnet–Dirac-Fermion Heterostructures

Physical Review Applied, 2(4).

Thermal transport properties of metal/MoS2 interfaces from first principles

Journal of Applied Physics, 116(3), 034302.

Thin-film topological insulator-ferromagnet heterostructures for terahertz detection

Applied Physics Letters, 104(6), 061116.

Ultrafast valley relaxation dynamics in single layer semiconductors

In Z. Liu (Ed.), Ultrafast Nonlinear Imaging and Spectroscopy II.

Voltage-driven magnetic bifurcations in nanomagnet–topological insulator heterostructures

Physical Review B, 89(20).

First-principles calculation of thermal transport in metal/graphene systems

Physical Review B, 87(16).

Intrinsic electrical transport properties of monolayer silicene and MoS2from first principles

Physical Review B, 87(11).

Many-Body Effects in Valleytronics: Direct Measurement of Valley Lifetimes in Single-Layer MoS2

Nano Letters, 14(1), 202–206.

Spin logic via controlled correlation in a topological insulator-nanomagnet hybrid structure

71st Device Research Conference. Presented at the 2013 71st Annual Device Research Conference (DRC).

Toward stimulated interaction of surface phonon polaritons

Journal of Applied Physics, 114(23), 233508.

Ab initiothermal transport properties of nanostructures from density functional perturbation theory

Journal of Physics: Condensed Matter, 24(49), 492204.

Charge transfer equilibria in ambient-exposed epitaxial graphene on (0001¯) 6 H-SiC

Journal of Applied Physics, 111(11), 113706.

Electrically controlled magnetization in ferromagnet-topological insulator heterostructures

Physical Review B, 86(16).

Electronic and Structural Properties of Turbostratic Epitaxial Graphene on the 6H-SiC (000-1) Surface

Materials Science Forum, 717-720, 595–600.

Magnetic domain wall transfer via graphene mediated electrostatic control

Applied Physics Letters, 101(1), 013103.

Multiple coexisting intercalation structures of sodium in epitaxial graphene-SiC interfaces

Physical Review B, 85(12).

Phonon engineering in nanostructures: Controlling interfacial thermal resistance in multilayer-graphene/dielectric heterojunctions

Applied Physics Letters, 101(11), 113111.

Publisher’s Note: “Charge transfer equilibria in ambient-exposed epitaxial graphene on (0001¯) 6 H-SiC” [J. Appl. Phys. 111, 113706 (2012)]

Journal of Applied Physics, 112(2), 029908.

Tunable photogalvanic effect on topological insulator surfaces via proximity interactions

Physical Review B, 86(20).

Two dimensional crystal tunneling devices for THz operation

Applied Physics Letters, 101(26), 263112.

Electron transport in bulk GaN under ultrashort high-electric field transient

Semiconductor Science and Technology, 26(10), 105008.

Electron transport properties of bilayer graphene

Physical Review B, 84(19).

Electron-phonon interactions in bilayer graphene

Physical Review B, 83(16).

Electronic properties of the graphene/6H-SiC(0001¯) interface: A first-principles study

Physical Review B, 84(3).

Generation-recombination noise in bipolar graphene

Journal of Applied Physics, 110(4), 044327.

Strong substrate effects of Joule heating in graphene electronics

Applied Physics Letters, 99(23), 233114.

Unusual magnetoresistance in a topological insulator with a single ferromagnetic barrier

Applied Physics Letters, 98(24), 243112.

Weak ferromagnetism of antiferromagnetic domains in graphene with defects

Physical Review B, 84(16).

Band Engineering and Magnetic Doping of Epitaxial Graphene on SiC (0001)

Physical Review Letters, 104(14).

Electrically controlled magnetic switching based on graphene-magnet composite structures

Journal of Applied Physics, 107(6), 064507.

Electron spin relaxation in carbon nanotubes

Physical Review B, 82(15).

First-principles analysis of electron-phonon interactions in graphene

Physical Review B, 81(12).

Graphene spin capacitor for magnetic field sensing

Applied Physics Letters, 97(1), 013106.

Influence of electron-electron scattering on transport characteristics in monolayer graphene

Applied Physics Letters, 97(8), 082101.

Large-Signal Analysis of Terahertz Generation in Submicrometer GaN Diodes

IEEE Sensors Journal, 10(3), 765–771.

Magnetoconcentration effect in intrinsic graphene ribbons

Applied Physics Letters, 97(11), 112112.

Quasi-Coherent Thermal Emission in the Terahertz by Doped Semiconductors

IEEE Sensors Journal, 10(3), 443–450.

Surface polar phonon dominated electron transport in graphene

Applied Physics Letters, 97(23), 232105.

Thermoelectric properties of graphene nanoribbons, junctions and superlattices

Journal of Physics: Condensed Matter, 22(37), 372202.

First-principles analysis of lattice thermal conductivity in monolayer and bilayer graphene

Physical Review B, 80(3).

Terahertz generation in GaN diodes operating in pulsed regime limited by self-heating

Applied Physics Letters, 94(22), 222106.

Alternate State Variables for Emerging Nanoelectronic Devices

IEEE Transactions on Nanotechnology, 8(1), 66–75.

Electrical Control of Exchange Bias Mediated by Graphene

Physical Review Letters, 101(14).

Electron spin relaxation via flexural phonon modes in semiconducting carbon nanotubes

Physical Review B, 77(20).

Magnetic polaron for a spin memory application

Journal of Applied Physics, 104(8), 084306.

Magnetoresistance in bilayer graphene via ferromagnet proximity effects

Physical Review B, 77(23).

Nonvolatile Memory via Spin Polaron Formation

IEEE Transactions on Nanotechnology, 7(4), 480–483.

Optical phonon instability caused by ultra-high-speed electron transport in nanoscale samples

2008 4th International Conference on Advanced Optoelectronics and Lasers. Presented at the 2008 International Conference on Advanced Optoelectronics and Lasers (CAOL).

Terahertz emission mediated by surface plasmon polaritons in doped semiconductors with surface grating

Journal of Applied Physics, 103(5), 056101.

Terahertz generation in GaN diodes in the limited space-charge accumulation mode

Journal of Applied Physics, 103(12), 126101.

A quantum dot memory cell based on spin polaron formation

2007 International Semiconductor Device Research Symposium. Presented at the 2007 International Semiconductor Device Research Symposium.

Elastic spin-relaxation processes in semiconductor quantum dots

Physical Review B, 75(19).

Electrical Manipulation of Nonvolatile Spin Cell Based on Diluted Magnetic Semiconductor Quantum Dots

IEEE Transactions on Electron Devices, 54(5), 1032–1039.

Electron spin relaxation in semiconducting carbon nanotubes: The role of hyperfine interaction

Physical Review B, 75(4).

Imaging properties of a metallic photonic crystal

Journal of Applied Physics, 101(11), 113105.

Negative small-signal impedance of nanoscale GaN diodes in the terahertz frequency regime

Applied Physics Letters, 90(14), 142117.

Quasimonochromatic emission spectra in the near field by polar semiconductor thermal sources

Applied Physics Letters, 90(11), 113106.

Spin field effect transistor with a graphene channel

Applied Physics Letters, 91(15), 153105.

Emerging memory devices

IEEE Circuits and Devices Magazine, 22(3), 12–21.

Optical phonon instability induced by high-speed electron transport in nanoscale semiconductor structures

Physical Review B, 73(3).

Realization of tunable photonic crystals based on the metal insulator transition of VO 2

In A. Adibi, S.-Y. Lin, & A. Scherer (Eds.), Photonic Crystal Materials and Devices IV.

Subpicosecond Raman studies of electric-field-induced optical phonon instability in an In0.53Ga0.47As-based semiconductor nanostructure

Journal of Physics: Condensed Matter, 18(34), 7961–7974.

Tunable waveguiding in electrically programmable VO2-based photonic crystals

JOURNAL OF APPLIED PHYSICS, 99(11).

Analysis of the Δ(X) − L intervalley mixing in group-IV heterostructures

AIP Conference Proceedings, 772, 409–410,

Bistability in a magnetic and nonmagnetic double-quantum-well structure mediated by the magnetic phase transition

Applied Physics Letters, 86(7), 073107.

Coulombic effects of electron-hole plasma in nitride-based nanostructures

Journal of Applied Physics, 98(6), 063711.

Electrically programmable photonic crystal slab based on the metal-insulator transition in VO2

Journal of Applied Physics, 97(10), 106102.

Electron-phonon interaction via the Pekar mechanism in nanostructures

Physical Review B, 71(8).

Exchange Effects on Electronic States in QWs with e-h Plasma in an Electric Field

AIP Conference Proceedings, 772, 1234–1235,

High-speed and high-frequency electron effects in nitride semiconductors for terahertz applications

Physica Status Solidi (c), 2(7), 2569–2572.

L-valley electrons in SiGe heterostructures: highly anisotropic and tunable Zeeman and Rashba-like spin splittings

AIP Conference Proceedings, 772, 411–412,

Nitride-based two-terminal oscillators operating in the THz regime

In R. J. Hwu, D. L. Woolard, & M. J. Rosker (Eds.), Terahertz for Military and Security Applications III.

Nonvolatile bistability effect based on the electrically controlled phase transition in scaled magnetic semiconductor nanostructures

Physical Review B, 72(19).

Prohibition of equilibrium spin currents in multiterminal ballistic devices

Physical Review B, 71(15).

Spin relaxation of two-dimensional holes in strained asymmetric SiGe quantum wells

Physical Review B, 71(3).

Terahertz generation in submicron GaN diodes within the limited space-charge accumulation regime

Journal of Applied Physics, 98(6), 064507.