Lindsay K. Hussey

Works (13)

Updated: July 5th, 2023 15:45

2016 article

The role of surface kinetics on composition and quality of AlGaN

Bryan, I., Bryan, Z., Mita, S., Rice, A., Hussey, L., Shelton, C., … Sitar, Z. (2016, July 2). Journal of Crystal Growth, Vol. 451, pp. 65–71.

By: I. Bryan n, Z. Bryan n, S. Mita *, A. Rice n, L. Hussey n, C. Shelton n, J. Tweedie *, J. Maria n, R. Collazo n , Z. Sitar n

author keywords: Growth models; Surface kinetics; Metalorganic chemical vapor deposition; Nitrides
topics (OpenAlex): GaN-based semiconductor devices and materials; ZnO doping and properties; Metal and Thin Film Mechanics
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2015 article

KOH based selective wet chemical etching of AlN, AlxGa1−xN, and GaN crystals: A way towards substrate removal in deep ultraviolet-light emitting diode

Guo, W., Kirste, R., Bryan, I., Bryan, Z., Hussey, L., Reddy, P., … Sitar, Z. (2015, February 23). Applied Physics Letters, Vol. 106, p. 082110.

By: W. Guo n, R. Kirste n, I. Bryan n, Z. Bryan n, L. Hussey n, P. Reddy n , J. Tweedie, R. Collazo n , Z. Sitar n

Contributors: W. Guo n, R. Kirste n, I. Bryan n, Z. Bryan n, L. Hussey n, P. Reddy n , J. Tweedie, R. Collazo n , Z. Sitar n

topics (OpenAlex): GaN-based semiconductor devices and materials; Ga2O3 and related materials; ZnO doping and properties
Sources: Web Of Science, ORCID, NC State University Libraries
Added: August 6, 2018

2014 article

Exciton transitions and oxygen as a donor in m-plane AlN homoepitaxial films

Bryan, Z., Bryan, I., Bobea, M., Hussey, L., Kirste, R., Sitar, Z., & Collazo, R. (2014, April 2). Journal of Applied Physics, Vol. 115.

By: Z. Bryan n, I. Bryan n, M. Bobea n, L. Hussey n, R. Kirste n, Z. Sitar n, R. Collazo n 

topics (OpenAlex): GaN-based semiconductor devices and materials; Ga2O3 and related materials; Acoustic Wave Resonator Technologies
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2014 article

Fermi level control of compensating point defects during metalorganic chemical vapor deposition growth of Si-doped AlGaN

Bryan, Z., Bryan, I., Gaddy, B. E., Reddy, P., Hussey, L., Bobea, M., … Collazo, R. (2014, December 1). Applied Physics Letters, Vol. 105, p. 222101.

By: Z. Bryan n, I. Bryan n, B. Gaddy n, P. Reddy n , L. Hussey n, M. Bobea n, W. Guo n, M. Hoffmann n ...

Contributors: Z. Bryan n, I. Bryan n, B. Gaddy n, P. Reddy n , L. Hussey n, M. Bobea n, W. Guo n, M. Hoffmann n ...

topics (OpenAlex): GaN-based semiconductor devices and materials; Semiconductor materials and devices; Ga2O3 and related materials
Sources: Web Of Science, ORCID, NC State University Libraries
Added: August 6, 2018

2014 article

Homoepitaxial AlN thin films deposited on m-plane (11¯00) AlN substrates by metalorganic chemical vapor deposition

Bryan, I., Bryan, Z., Bobea, M., Hussey, L., Kirste, R., Collazo, R., & Sitar, Z. (2014, October 6). Journal of Applied Physics, Vol. 116.

By: I. Bryan n, Z. Bryan n, M. Bobea n, L. Hussey n, R. Kirste n, R. Collazo n , Z. Sitar n

topics (OpenAlex): GaN-based semiconductor devices and materials; Metal and Thin Film Mechanics; Acoustic Wave Resonator Technologies
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2014 article

Properties of AlN based lateral polarity structures

Kirste, R., Mita, S., Hoffmann, M. P., Hussey, L., Guo, W., Bryan, I., … Sitar, Z. (2014, January 20). Physica Status Solidi. C, Conferences and Critical Reviews/Physica Status Solidi. C, Current Topics in Solid State Physics, Vol. 11, pp. 261–264.

By: R. Kirste n, S. Mita *, M. Hoffmann n, L. Hussey n, W. Guo n, I. Bryan n, Z. Bryan n, J. Tweedie n ...

author keywords: lateral polarity structures; quasi-phase matching; N-polar; columnar growth
topics (OpenAlex): GaN-based semiconductor devices and materials; Metal and Thin Film Mechanics; Acoustic Wave Resonator Technologies
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2014 article

Sapphire decomposition and inversion domains in N-polar aluminum nitride

Hussey, L., White, R. M., Kirste, R., Mita, S., Bryan, I., Guo, W., … Sitar, Z. (2014, January 20). Applied Physics Letters, Vol. 104.

By: L. Hussey n, R. White n, R. Kirste n, S. Mita *, I. Bryan n, W. Guo n, K. Osterman n, B. Haidet n ...

topics (OpenAlex): GaN-based semiconductor devices and materials; Acoustic Wave Resonator Technologies; Metal and Thin Film Mechanics
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2014 article

Stimulated emission and optical gain in AlGaN heterostructures grown on bulk AlN substrates

Guo, W., Bryan, Z., Xie, J., Kirste, R., Mita, S., Bryan, I., … Sitar, Z. (2014, March 14). Journal of Applied Physics, Vol. 115.

By: W. Guo n, Z. Bryan n, J. Xie *, R. Kirste n, S. Mita *, I. Bryan n, L. Hussey n, M. Bobea n ...

topics (OpenAlex): GaN-based semiconductor devices and materials; Semiconductor materials and devices; Semiconductor Quantum Structures and Devices
UN Sustainable Development Goals Color Wheel
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2014 article

The effect of polarity and surface states on the Fermi level at III-nitride surfaces

Reddy, P., Bryan, I., Bryan, Z., Guo, W., Hussey, L., Collazo, R., & Sitar, Z. (2014, September 22). Journal of Applied Physics, Vol. 116.

By: P. Reddy n , I. Bryan n, Z. Bryan n, W. Guo n, L. Hussey n, R. Collazo n , Z. Sitar n

Contributors: P. Reddy n , I. Bryan n, Z. Bryan n, W. Guo n, L. Hussey n, R. Collazo n , Z. Sitar n

topics (OpenAlex): GaN-based semiconductor devices and materials; Ga2O3 and related materials; Photocathodes and Microchannel Plates
Sources: Web Of Science, ORCID, NC State University Libraries
Added: August 6, 2018

2013 article

Lasing and longitudinal cavity modes in photo-pumped deep ultraviolet AlGaN heterostructures

Xie, J., Mita, S., Bryan, Z., Guo, W., Hussey, L., Moody, B., … Sitar, Z. (2013, April 29). Applied Physics Letters, Vol. 102.

By: J. Xie *, S. Mita *, Z. Bryan n, W. Guo n, L. Hussey n, B. Moody *, R. Schlesser*, R. Kirste n ...

topics (OpenAlex): GaN-based semiconductor devices and materials; Ga2O3 and related materials; Acoustic Wave Resonator Technologies
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2013 article

Strain relaxation by pitting in AlN thin films deposited by metalorganic chemical vapor deposition

Bryan, I., Rice, A., Hussey, L., Bryan, Z., Bobea, M., Mita, S., … Sitar, Z. (2013, February 11). Applied Physics Letters, Vol. 102.

By: I. Bryan n, A. Rice n, L. Hussey n, Z. Bryan n, M. Bobea n, S. Mita *, J. Xie *, R. Kirste n, R. Collazo n , Z. Sitar n

topics (OpenAlex): GaN-based semiconductor devices and materials; Acoustic Wave Resonator Technologies; Metal and Thin Film Mechanics
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2012 journal article

Fluorescence of Er(3+):AlN polycrystalline ceramic

Optical Materials Express, 2(1), 78–91.

By: L. Merkle, A. Sutorik, T. Sanamyan, L. Hussey, G. Gilde, C. Cooper, M. Dubinskii

Source: NC State University Libraries
Added: August 6, 2018

2012 article

Lateral epitaxial overgrowth of nitrogen polar GaN on smooth nitrogen polar GaN templates by metalorganic chemical vapor deposition

Hussey, L., Mita, S., Xie, J., Guo, W., Akouala, C.-R., Rajan, J., … Sitar, Z. (2012, December 1). Journal of Applied Physics, Vol. 112.

By: L. Hussey n, S. Mita *, J. Xie *, W. Guo n, C. Akouala n, J. Rajan n, I. Bryan n, R. Collazo n , Z. Sitar n

topics (OpenAlex): GaN-based semiconductor devices and materials; Ga2O3 and related materials; ZnO doping and properties
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

Citation Index includes data from a number of different sources. If you have questions about the sources of data in the Citation Index or need a set of data which is free to re-distribute, please contact us.

Certain data included herein are derived from the Web of Science© and InCites© (2026) of Clarivate Analytics. All rights reserved. You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.