Leda Lunardi

Vergara, P., & Lunardi, L. (2021). Fabrication of an Electrostatic Actuated Dielectric Mirror With Free-Standing Layers of Polymer. IEEE TRANSACTIONS ON ELECTRON DEVICES, 68(12), 6240–6248. https://doi.org/10.1109/TED.2021.3116922

Heterojunction Bipolar Transistors and Monolithically Integrated Photoreceivers Among Other Applications. (2020). In Women in Microelectronics. https://doi.org/https://doi.org/10.1007/978-3-030-46377-9

Women in Microelectronics. (2020). In Springer. Retrieved from http://www.springer.com/

Lunardi, L., Cass, C., & Cimorelli, K. (2018). Promoting academic and career success for raleigh future scholars at NC state university. ASEE Annual Conference and Exposition, Conference Proceedings, 2018-June. Retrieved from http://www.scopus.com/inward/record.url?eid=2-s2.0-85051175423&partnerID=MN8TOARS

Vergara, P. P., & Lunardi, L. (2017). Actuated polymer based dielectric mirror for visual spectral range applications. Nanoengineering: Fabrication, Properties, Optics, and Devices XIV, 10354. https://doi.org/10.1117/12.2271871

Vergara, P. P., & Lunardi, L. (2017). Actuated polymer based dielectric mirror for visual spectral range applications. Nanoengineering: fabrication, properties, optics, and devices xiv, 10354.

Cass, C., Lunardi, L., & Gordon, O. C. (2017). Promoting academic and career success for Raleigh Future Scholars at NC State. ASEE Annual Conference and Exposition, Conference Proceedings, 2017-June. Retrieved from http://www.scopus.com/inward/record.url?eid=2-s2.0-85030554357&partnerID=MN8TOARS

Mehta, J. U., Borders, W. A., Liu, H., Pandey, R., Datta, S., & Lunardi, L. (2016). III-V Tunnel FET Model With Closed-Form Analytical Solution. IEEE TRANSACTIONS ON ELECTRON DEVICES, 63(5), 2163–2168. https://doi.org/10.1109/ted.2015.2471808

Mehta, J., & Lunardi, L. (2015). Lateral silicon photodiodes with extremely low dark current for visible and infra-red applications. 2015 photonics conference (ipc), 446–447. https://doi.org/10.1109/ipcon.2015.7323594

Mehta, U., Borders, W. A., Lunardi, L., Liu, H., & Datta, S. (2014). A compact model for compound semiconductor tunneling field-effect-transistors. Conference Proceedings - IEEE SOUTHEASTCON. https://doi.org/10.1109/SECON.2014.6950716

Lunardi, L., Mokkapati, S., & Jagadish, C. (2013). Optoelectronic Devices. In Guide to State-of-the-Art Electron Devices (pp. 265–274). https://doi.org/10.1002/9781118517543.ch20

Lunardi, L. (2013). Undergraduate research and the smart grid: REU-Site: Engineering the grid. ASEE Annual Conference and Exposition, Conference Proceedings. Retrieved from http://www.scopus.com/inward/record.url?eid=2-s2.0-84884333631&partnerID=MN8TOARS

Sharma, K. P., Oseroff, T., & Lunardi, L. (2012). Intermetallic Formation in PZT for MEMS Structures. Materials Research Society Symposium Proceedings, 1427, 56–61. https://doi.org/10.1557/opl.2012.1404

Tomkos, I., Mukherjee, B., Korotky, S. K., Tucker, R. S., & Lunardi, L. (2012, May). The Evolution of Optical Networking. PROCEEDINGS OF THE IEEE, Vol. 100, pp. 1017–1022. https://doi.org/10.1109/jproc.2012.2187363

Luo, H., Wellenius, P., Lunardi, L., & Muth, J. F. (2012). Transparent IGZO-Based Logic Gates. IEEE ELECTRON DEVICE LETTERS, 33(5), 673–675. https://doi.org/10.1109/led.2012.2186784

Morgensen, M. P., & Lunardi, L. M. (2011). Analytical Correction for Effective Mobility Measurements in MOSFETs. IEEE TRANSACTIONS ON ELECTRON DEVICES, 58(9), 2871–2873. https://doi.org/10.1109/ted.2011.2158581

Luo, H., Wellenius, P., Lunardi, L., & Muth, J. F. (2010). Amorphous InGaZnO logic gates for transparent electronics. Device Research Conference - Conference Digest, DRC, 121–122. https://doi.org/10.1109/DRC.2010.5551866

Lou, Y., Lunardi, L. M., & Muth, J. F. (2010). Fabrication of Nanoshell Arrays Using Directed Assembly of Nanospheres. IEEE SENSORS JOURNAL, 10(3), 617–620. https://doi.org/10.1109/jsen.2009.2038586

Suresh, A., Wellenius, P., Baliga, V., Luo, H., Lunardi, L. M., & Muth, J. F. (2010). Fast All-Transparent Integrated Circuits Based on Indium Gallium Zinc Oxide Thin-Film Transistors. IEEE ELECTRON DEVICE LETTERS, 31(4), 317–319. https://doi.org/10.1109/led.2010.2041525

Kumar, M. J., Lunardi, L., Meneghesso, G., Pearton, S. J., & Schubert, E. F. (2010). Guest Editorial Special Issue on Light-Emitting Diodes. IEEE Transactions on Electron Devices, 57(1), 7–11. https://doi.org/10.1109/ted.2009.2035570

Kumar, M. J., Lunardi, L., Meneghesso, G., Pearton, S. J., & Schubert, E. F. (2010). Special issue on light-emitting diodes. IEEE Transactions on Electron Devices, 57(1), 7–11.

Wellenius, P., Suresh, A., Luo, H., Lunardi, L. M., & Muth, J. F. (2009). An Amorphous Indium-Gallium-Zinc-Oxide Active Matrix Electroluminescent Pixel. JOURNAL OF DISPLAY TECHNOLOGY, 5(12), 438–445. https://doi.org/10.1109/JDT.2009.2024012

Chintapatla, S., Muth, J. F., & Lunardi, L. M. (2009). Controlling the wrinkling of the bilayer thin films electrothermally. Materials Research Society Symposium Proceedings, 1139, 97–102. Retrieved from http://www.scopus.com/inward/record.url?eid=2-s2.0-70449574600&partnerID=MN8TOARS

Shelton, W. A., Muth, J. F., Holland, J. L., & Lunardi, L. M. (2006). Characterization of silicon nitride micromachined beams via remote optical interrogation. IEEE/LEOS International Conference on Optical MEMS and Their Applications Conference, 2006, 138–139. https://doi.org/10.1109/omems.2006.1708303

Gollakota, P., Dhawan, A., Wellenius, P., Lunardi, L. M., Muth, J. F., Saripalli, Y. N., … Everitt, H. O. (2006). Optical characterization of Eu-doped β-Ga2O3 thin films. Applied Physics Letters, 88(22), 221906. https://doi.org/10.1063/1.2208368

Muth, J. F., Gollakota, P., Dhawan, A., Porter, H. L., Saripalli, Y. N., & Lunardi, L. M. (2005). Gallium Oxide as a host for rare earth elements. Materials Research Society Symposium Proceedings, 866, 177–182. https://doi.org/10.1557/proc-866-v6.2

Lunardi, L., & Welser, J. (2003). Plenary session. Technical Digest - International Electron Devices Meeting, 1. Retrieved from http://www.scopus.com/inward/record.url?eid=2-s2.0-0842288304&partnerID=MN8TOARS

Moss, D., Lunardi, L., Lamont, M., Randall, G., Colbourne, P., Chandrasekhar, S., … Hulse, C. (2003). Tunable Dispersion Compensation at 10Gb/s and 40Gb/S Using Multicavity All-Pass Etalons. Conference on Optical Fiber Communication, Technical Digest Series, 86, 162–163. Retrieved from http://www.scopus.com/inward/record.url?eid=2-s2.0-1642524225&partnerID=MN8TOARS

Lunardi, L., Welser, J., & Candelaria, J. (2003). Welcome from the general chair. Technical Digest - International Electron Devices Meeting. Retrieved from http://www.scopus.com/inward/record.url?eid=2-s2.0-0842266682&partnerID=MN8TOARS

Chen, Y., Pavlik, R., Visone, C., Pan, F., Gonzales, E., Turukhin, A., … Lumish, S. (2002). 40 nm broadband SOA-Raman hybrid amplifier. Conference on Optical Fiber Communication, Technical Digest Series, 70, 390–391. Retrieved from http://www.scopus.com/inward/record.url?eid=2-s2.0-0036438676&partnerID=MN8TOARS

DeSalvo, R., Wilson, A. G., Rollman, J., Schneider, D. F., Lunardi, L. M., Lumish, S., … Kissa, K. M. (2002). Advanced components and sub-system solutions for 40 Gb/s transmission. Journal of Lightwave Technology, 20(12), 2154–2181. https://doi.org/10.1109/jlt.2002.806782

Chen, Y., Lunardi, L., Al-Salameh, D., & Lumish, S. (2002). Raman tilt and nonideal tilt control function of C-band erbium-doped fiber amplifiers. Optical Components and Transmission Systems, 4906, 185–192. https://doi.org/10.1117/12.480569

Turukhin, A., Lunardi, L., Gonzales, E., & Vreeburg, K. (2002). SOA characteristics for L-BAND system applications. European Conference on Optical Communication, ECOC, 3. Retrieved from http://www.scopus.com/inward/record.url?eid=2-s2.0-84949009348&partnerID=MN8TOARS

Lunardi, L. M. (2002). Semiconductor devices for fiber optic communication systems. 2002 23rd International Conference on Microelectronics, MIEL 2002 - Proceedings, 1, 99–102. https://doi.org/10.1109/MIEL.2002.1003154

Lunardi, L. M., Moss, D. J., Chandrasekhar, S., Buhl, L. L., Lamont, M., McLaughlin, S., … Hulse, C. A. (2002). Tunable dispersion compensation at 40-Gb/s using a multicavity etalon all-pass filter with NRZ, RZ, and CS-RZ modulation. Journal of Lightwave Technology, 20(12), 2136–2144. https://doi.org/10.1109/jlt.2002.806768

Chen, Y., Singh, A., Lunardi, L., Lumish, S., Achtenhagen, M., Singh, R., & Inniss, D. (2001). Bi-directionally pumped broadband Raman amplifier. European Conference on Optical Communication, ECOC, 2, 230–231. Retrieved from http://www.scopus.com/inward/record.url?eid=2-s2.0-0035741267&partnerID=MN8TOARS

Lunardi, L. M., Feuer, M. D., Chen, Y., Singh, A., Pavlik, R., Gonzales, E., … Lumish, S. (2001). Challenges in component testing for optical systems. Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS, 2, 540–541. https://doi.org/10.1109/LEOS.2001.968928

Birk, M., Lunardi, L. M., Gnauck, A. H., Schumacher, H., & Behammer, D. (2000). 10-Gbit/s RZ pulses using an all-silicon nonlinear transmission line integrated circuit. Conference on Optical Fiber Communication, Technical Digest Series, 1, 248–250. Retrieved from http://www.scopus.com/inward/record.url?eid=2-s2.0-0033645117&partnerID=MN8TOARS

Datta, S., Roenker, K. P., Cahay, M. M., & Lunardi, L. M. (2000). Analytical modeling of pnp InP/InGaAs heterojunction bipolar transistors. Solid-State Electronics, 44(7), 1331–1333. https://doi.org/10.1016/s0038-1101(00)00055-1

Feuer, M. D., Thomas, M. A., & Lunardi, L. M. (2000). Backreflection and loss in single-fiber loopback networks. IEEE Photonics Technology Letters, 12(8), 1106–1108. https://doi.org/10.1109/68.868023

Feuer, M. D., Lam, C. F., Lunardi, L. M., & Woodward, S. L. (2000). Crosstalk in a metro-scale ring with passive optical add/drop. Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS, 2, 694–695. Retrieved from http://www.scopus.com/inward/record.url?eid=2-s2.0-0034481563&partnerID=MN8TOARS

Lin, L. Y., Goldstein, E. L., & Lunardi, L. M. (2000). Integrated signal monitoring and connection verification in MEMS optical crossconnects. IEEE Photonics Technology Letters, 12(7), 885–887. https://doi.org/10.1109/68.853537

Lunardi, L. (1999). Heterostructure circuit applications in optical communications. Solid-State Electronics, 43(8), 1627–1632. https://doi.org/10.1016/s0038-1101(99)00112-4

Lunardi, L. M., Lin, L. Y., & Golsdtein, E. L. (1999). Micromachined optical crossconnects with integrated signal-monitoring functionality. OFC/IOOC 1999 - Optical Fiber Communication Conference and the International Conference on Integrated Optics and Optical Fiber Communication, 4, 128–130. https://doi.org/10.1109/OFC.1999.766016

Lunardi, L. M., Lin, L. Y., & Goldstein, E. L. (1999). Micromachined optical crossconnects with integrated signal-monitoring functionality. Conference on Optical Fiber Communication, Technical Digest Series. Retrieved from http://www.scopus.com/inward/record.url?eid=2-s2.0-0032638549&partnerID=MN8TOARS

Lin, L. Y., Goldstein, E. L., Lunardi, L. M., & Tkach, R. W. (1999). Micromachined optical-switching technologies for WDM networks. LEOS Summer Topical Meeting, 57–58. Retrieved from http://www.scopus.com/inward/record.url?eid=2-s2.0-0032599069&partnerID=MN8TOARS

Lin, L. Y., Goldstein, E. L., Lunardi, L. M., & Tkach, R. W. (1999). Optical crossconnects for high-capacity lightwave networks. Journal of High Speed Networks, 8(1), 17–34. Retrieved from http://www.scopus.com/inward/record.url?eid=2-s2.0-0004664608&partnerID=MN8TOARS

Rios, J. M. M., Lunardi, L. M., Chandrasekhar, S., & Miyamoto, Y. (1997). A self-consistent method for complete small-signal parameter extraction of InP-based heterojunction bipolar transistors (HBT's). IEEE Transactions on Microwave Theory and Techniques, 45(1), 39–45. https://doi.org/10.1109/22.552030

Lunardi, L. M. (1997). InP-based monolithically integrated photoreceivers. Conference Proceedings - International Conference on Indium Phosphide and Related Materials, 471–474. Retrieved from http://www.scopus.com/inward/record.url?eid=2-s2.0-0030681951&partnerID=MN8TOARS

Garrett, L. D., Chandrasekhar, S., Zyskind, J. L., Sulhoff, J. W., Dentai, A. G., Burrus, C. A., … Derosier, R. M. (1997). Performance of 8-channel OEIC receiver array in 8 x 2.5 Gb/s WDM transmission experiment. IEEE Photonics Technology Letters, 9(2), 235–237. https://doi.org/10.1109/68.553103

Garrett, L. D., Chandrasekhar, S., Zyskind, J. L., Sulhoff, J. W., Dentai, A. G., Burrus, C. A., … Derosier, R. M. (1997). Performance of eight-channel InP p-i-n/HBT receiver array in 8×2.5 Gbit/s wavelength-division multiplexed transmission experiment. Conference on Optical Fiber Communication, Technical Digest Series, 14–15. Retrieved from http://www.scopus.com/inward/record.url?eid=2-s2.0-0030714247&partnerID=MN8TOARS

Garrett, L. D., Chandrasekhar, S., Zyskind, J. L., Sulhoff, J. W., Dentai, A. G., Burrus, C. A., … Derosier, R. M. (1997). Performance of eight-channel OEIC p-i-n/HBT receiver array in 8×2.5 Gb/s WDM transmission system. Journal of Lightwave Technology, 15(5), 827–832. https://doi.org/10.1109/50.580823

Kim, J. B., Kim, M. J., Kim, S. J., Hwang, W.-Y., Miller, D. L., Das, M. B., … Lunardi, L. M. (1997). []. Optical and Quantum Electronics, 29(10), 953–959. https://doi.org/10.1023/a:1018589903010

10-Gbit/s penalty-free optical transmission over 102.5 km of standard fiber using 1.3-μm electroabsorption modulated laser and Raman amplifier. (1996). Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS, 2–3. Retrieved from http://www.scopus.com/inward/record.url?eid=2-s2.0-0029705732&partnerID=MN8TOARS

Samelis, A., Pavlidis, D., Chandrasekhar, S., & Lunardi, L. M. (1996). Analysis of the large-signal characteristics of InP/ InGaAs-based optoelectronic preamplifiers. Microwave and Optical Technology Letters, 11(3), 163–168. https://doi.org/10.1002/(sici)1098-2760(19960220)11:3<163::aid-mop14>3.0.co;2-c

Lunardi, L. M., & Chandrasekhar, S. (1996). Integrated p-i-n/HBT photoreceivers for optical communications. Technical Digest - International Electron Devices Meeting, 645–648. Retrieved from http://www.scopus.com/inward/record.url?eid=2-s2.0-0030383548&partnerID=MN8TOARS

Chandrasekhar, S., Garrett, L. D., Lunardi, L. M., Dentai, A. G., Burrus, C. A., & Burrows, E. C. (1996). Investigation of crosstalk performance of eight-channel p-i-n/HBT OEIC photoreceiver array modules. IEEE Photonics Technology Letters, 8(5), 682–684. https://doi.org/10.1109/68.491594

Kim, J.-B., Kim, M.-J., Park, J.-W., Kim, D.-H., Kim, S.-J., Hwang, W.-Y., … Lunardi, L. M. (1996). Large-area InAlAs/InGaAs Schottky barrier enhanced metal semiconductor metal photodiode with low dark current. Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS, 2, 330–331. Retrieved from http://www.scopus.com/inward/record.url?eid=2-s2.0-0030397433&partnerID=MN8TOARS

Samelis, A., Pavlidis, D., Chandrasekhar, S., Lunardi, L. M., & Rios, J. (1996). Large-signal characteristics of InP-based heterojunction bipolar transistors and optoelectronic cascode transimpedance amplifiers. IEEE Transactions on Electron Devices, 43(12), 2053–2061. https://doi.org/10.1109/16.544374

Hamm, R. A., Chandrasekhar, S., Lunardi, L., Geva, M., Malik, R., Humphrey, D., & Ryan, R. (1996). Materials and electrical characteristics of carbon-doped Ga0.47In0.53As using carbontetrabromide by MOMBE for HBT device applications. Journal of Crystal Growth, 164(1-4), 362–370. https://doi.org/10.1016/0022-0248(96)00004-8

Kirtania, A. K., Das, M. B., Chandrasekhar, S., Lunardi, L. M., Qua, G. J., Hamm, R. A., & Yang, L.-W. (1996). Measurement and comparison of 1/f noise and g-r noise in silicon homojunction and III-V heterojunction bipolar transistors. IEEE Transactions on Electron Devices, 43(5), 784–792. https://doi.org/10.1109/16.491256

Lunardi, L. M., & Chandrasekhar, S. (1995). 'High speed HBT-based OEIC photoreceivers for long wavelength system applications'. LEOS Summer Topical Meeting. Retrieved from http://www.scopus.com/inward/record.url?eid=2-s2.0-0029539677&partnerID=MN8TOARS

Lunardi, L. M., Chandrasekhar, S., Gnauck, A. H., Burrus, C. A., Dentai, A. G., & Rios, J. M. M. (1995). 15 Gbit/s pin/HBT optoelectronic integrated photoreceiver module realised using MOVPE material. Electronics Letters, 31(14), 1185–1186. https://doi.org/10.1049/el:19950788

Gutierrez-Aitken, A. L., Yang, K., Zhang, X., Haddad, G. I., Bhattacharya, P., & Lunardi, L. M. (1995). 16 GHz bandwidth InAlAs/InGaAs monolithically integrated pin-HBT photoreceiver. European Conference on Optical Communication, ECOC, 2, 661–664. Retrieved from http://www.scopus.com/inward/record.url?eid=2-s2.0-0029452304&partnerID=MN8TOARS

Gutierrez-Aitken, A. L., Yang, K., Zhang, X., Haddad, G. I., Bhattacharya, P., & Lunardi, L. M. (1995). 16-GHz bandwidth InAlAs-InGaAs monolithically integrated p-i-n/HBT photoreceiver. IEEE Photonics Technology Letters, 7(11), 1339–1341. https://doi.org/10.1109/68.473491

Lunardi, L. M., Chandrasekhar, S., Gnauck, A. H., Burrus, C. A., & Hamm, R. A. (1995). 20 Gb/s monolithic p-i-n/HBT photoreceiver module for 1.55 μm applications. European Conference on Optical Communication, ECOC, 2, 657–660. Retrieved from http://www.scopus.com/inward/record.url?eid=2-s2.0-0029453480&partnerID=MN8TOARS

Lunardi, L. M., Chandrasekhar, S., Gnauck, A. H., Burrus, C. A., & Hamm, R. A. (1995). 20-Gb/s monolithic p-i-n/HBT photoreceiver module for 1.55-μm applications. IEEE Photonics Technology Letters, 7(10), 1201–1203. https://doi.org/10.1109/68.466590

Lunardi, L. M., Chandrasekhar, S., Gnauck, A. H., Burrus, C. A., Sulhoff, J. W., Zyskind, J. L., & Hamm, R. A. (1995). A 12-Gb/s high-performance, high-sensitivity monolithic p-i-n/HBT photoreceiver module for long-wavelength transmission systems. IEEE Photonics Technology Letters, 7(2), 182–184. https://doi.org/10.1109/68.345916

Hamm, R. A., Malik, R., Humphrey, D., Ryan, R., Chandrasekhar, S., Lunardi, L., & Geva, M. (1995). Carbon doping of Ga0.47In0.53As using carbontetrabromide by metalorganic molecular beam epitaxy for InP‐based heterostructure bipolar transistor devices. Applied Physics Letters, 67, 2226. https://doi.org/10.1063/1.115111

Hamm, R. A., Chandrasekhar, S., Lunardi, L., & Geva, M. (1995). Characteristics of carbon doped InGaAs using carbontetrabromide by metalorganic molecular beam epitaxy. Journal of Crystal Growth, 148(1-2), 1–7. https://doi.org/10.1016/0022-0248(94)00862-0

Chandrasekhar, S., & Lunardi, L. M. (1995). High-performance p-i-n/HBT monolithic photoreceivers for lightwave communications. Proceedings of SPIE - The International Society for Optical Engineering, 2613, 91–97. Retrieved from http://www.scopus.com/inward/record.url?eid=2-s2.0-0029483865&partnerID=MN8TOARS

Samelis, A., Pavlidis, D., Sejalon, F., Chandrasekhar, S., & Lunardi, L. M. (1995). Large-signal characteristics of InP-based heterojunction bipolar transistors and their use in optoelectronic preamplifier design. Conference Proceedings - International Conference on Indium Phosphide and Related Materials, 648–651. Retrieved from http://www.scopus.com/inward/record.url?eid=2-s2.0-0029217866&partnerID=MN8TOARS

Chandrasekhar, S., Zirngibl, M., Dentai, A. G., Joyner, C. H., Storz, F., Burrus, C. A., & Lunardi, L. M. (1995). Monolithic eight-wavelength demultiplexed receiver for dense WDM applications. IEEE Photonics Technology Letters, 7(11), 1342–1344. https://doi.org/10.1109/68.473492

Gutierrez-Aitken, A. L., Yang, K., Zhang, X., Haddad, G. I., Bhattacharya, P., & Lunardi, L. M. (1995). Wide bandwidth InAlAs/InGaAs monolithic PIN-HBT photoreceiver. LEOS Summer Topical Meeting. Retrieved from http://www.scopus.com/inward/record.url?eid=2-s2.0-0029507792&partnerID=MN8TOARS

Lunardi, L. M., Chandrasekhar, S., Gnauck, A. H., Burrus, C. A., Hamm, R. A., Sulhoff, J. W., & Zyskind, J. L. (1994). 12 Gb/s high performance, high sensitivity monolithic p-i-n/HBT photoreceiver module for long wavelength transmission systems. European Conference on Optical Communication, ECOC, 121–124. Retrieved from http://www.scopus.com/inward/record.url?eid=2-s2.0-38449117570&partnerID=MN8TOARS

Kirtania, A. K., Das, M. B., Chandrasekhar, S., Lunardi, L. M., Hamm, R. A., & Yang, L. W. (1994). Comparison of low-frequency noise characteristics of silicon homojunction and III-V heterojunction bipolar transistors. Conference Proceedings - International Conference on Indium Phosphide and Related Materials, 535–538. Retrieved from http://www.scopus.com/inward/record.url?eid=2-s2.0-0028202020&partnerID=MN8TOARS

Chandrasekhar, S., Lunardi, L. M., & Qua, G. J. (1994). Eight-Channel p-i-n/HBT Monolithic Receiver Array at 2.5 Gb/s Per Channel for WDM Applications. IEEE Photonics Technology Letters, 6(10), 1216–1218. https://doi.org/10.1109/68.329643

Chandrasekhar, S., Lunardi, L. M., Hamm, R. A., & Qua, G. J. (1994). Eight-channel p-i-n/HBT monolithic receiver array at 2.5 Gb/s per channel for WDM applications. Conference Proceedings - International Conference on Indium Phosphide and Related Materials, 243–246. Retrieved from http://www.scopus.com/inward/record.url?eid=2-s2.0-0028202387&partnerID=MN8TOARS

Lunardi, L. M., Chandrasekhar, S., Swartz, R. G., Hamm, R. A., & Qua, G. J. (1994). High-speed burst-mode OEIC photoreceiver using InP/InGaAs heterojunction bipolar transistors. Conference on Optical Fiber Communication, Technical Digest Series, 4, 30–31. Retrieved from http://www.scopus.com/inward/record.url?eid=2-s2.0-0028135955&partnerID=MN8TOARS

Chandrasekhar, S., Lunardi, L. M., & Liou, K.-Y. (1993). High speed and high performance long wavelength OEICs using heterojunction bipolar transistors. Proceedings - 6th Annual IEEE International ASIC Conference and Exhibit, ASIC 1993, 490–493. https://doi.org/10.1109/ASIC.1993.410766

Lunardi, L. M., & Chandrasekhar, S. (1993). High-Speed, High-Current-Gain P-n-p InP/InGaAs Heterojunction Bipolar Transistors. IEEE Electron Device Letters, 14(1), 19–21. https://doi.org/10.1109/55.215087

Chandrasekhar, S., Lunardi, L. M., Gnauck, A. H., Qua, G. J., & Hamm, R. A. (1993). High-speed monolithic p-i-n/HBT and HPT/HBT photoreceivers implemented with simple phototransistor structure. IEEE Photonics Technology Letters, 5(11), 1316–1318. https://doi.org/10.1109/68.250055

Chandrasekhar, S., Lunardi, L. M., Gnauck, A. H., Ritter, D., Hamm, R. A., Panish, M. B., & Qua, G. J. (1992). A 10 Gbit/s OEIC photoreceiver using InP/InGaAs heterojunction bipolar transistors. Electronics Letters, 28(5), 466–468. https://doi.org/10.1049/el:19920294

Lunardi, L. M., Chandrasekhar, S., Hamm, R. A., & Hamm, R. A. (1992). IVA-8 High-Speed InP/InGaAs p-n-p Heterojunction Bipolar Transistors. IEEE Transactions on Electron Devices, 39(11), 2659. https://doi.org/10.1109/16.163522

Lunardi, L. M., Sen, S., Capasso, F., Smith, P. R., Sivco, D. L., & Cho, A. Y. (1992). Microwave multiple-state resonant tunneling bipolar transistors. Electron Device Letters, v(n), 219–221. Retrieved from http://www.scopus.com/inward/record.url?eid=2-s2.0-34250837017&partnerID=MN8TOARS

Lunardi, L. M., & Chandrasekhar, S. (1992). Optoelectronic applications of heterojunction bipolar transistor technology: promises and problems. Proceedings of SPIE - The International Society for Optical Engineering, 1680, 27–32. Retrieved from http://www.scopus.com/inward/record.url?eid=2-s2.0-0026961894&partnerID=MN8TOARS

Malik, R. J., Lunardi, L. M., Levine, B. F., Bethea, C. G., Beltram, F., Ralph, S. E., … Capasso, F. (1990). Band gap engineering of III-V semiconductors by MBE using electron beam evaporation of group III metals. Proceedings of SPIE - The International Society for Optical Engineering, 1285, 76–84. https://doi.org/10.1117/12.20809

Hobson, W. S., Ren, F., Abernathy, C. R., Pearton, S. J., Fullowan, T. R., Lothian, J., … Lunardi, L. M. (1990). Carbon-Doped Base GaAs-AlGaAs HBT's Grown by MOMBE and MOCVD Regrowth. IEEE Electron Device Letters, 11(6), 241–243. https://doi.org/10.1109/55.55267

Lunardi, L. M., Malik, R. J., Ryan, R. W., Smith, P. R., Shunk, S. C., Feuer, M. D., & Fullowan, T. R. (1990). Characteristics of AlGaAs/GaAs thin emitter heterojunction bipolar transistors. Proceedings of SPIE - The International Society for Optical Engineering, 1288, 44–56. https://doi.org/10.1117/12.20906

Lunardi, L. M., Archer, V. D., Swartz, R. G., Kuo, J. M., Kopf, R. F., Malik, R. J., & Smith, P. R. (1990). High Speed Linear Array Circuit with AIGaAs/Gaas Heterojunction Bipolar Transistors (HBTs). Electronics Letters, 26(15), 1157–1159. https://doi.org/10.1049/el:19900748

Swartz, R. G., Lunardi, L. M., Malik, R. J., Archer, V. D., Feuer, M. D., Walker, J. F., & Fullowan, T. R. (1989). AIGaAs/GaAs Heterojunction Bipolar Transistor Decision Circuit. Electronics Letters, 25(2), 118–119. https://doi.org/10.1049/el:19890087

Schubert, E. F., Tu, C. W., Kopf, R. F., Kuo, J. M., & Lunardi, L. M. (1989). Diffusion and drift of Si dopants in δ-doped n-type Al <inf>x</inf>Ga<inf>1-x</inf>As. Applied Physics Letters, 54(25), 2592–2594. https://doi.org/10.1063/1.101059

Pearton, S. J., Abernathy, C. R., Panish, M. B., Hamm, R. A., & Lunardi, L. M. (1989). Implant-induced high-resistivity regions in InP and InGaAs. Journal of Applied Physics, 66(2), 656–662. https://doi.org/10.1063/1.343533

Lunardi, L. M., Capasso, F., Smith, P. R., Sivco, D. L., & Cho, A. Y. (1989). Microwave Multiple-State Resonant-Tunneling Bipolar Transistors. IEEE Electron Device Letters, 10(5), 219–221. https://doi.org/10.1109/55.31726

Capasso, F., Sen, S., Beltram, F., Lunardi, L. M., Vengurlekar, A. S., Smith, P. R., … Cho, A. Y. (1989). Quantum Functional Devices: Resonant-Tunneling Transistors, Circuits with Reduced Complexity, and Multiple-Valued Logic. IEEE Transactions on Electron Devices, 36(10), 2065–2082. https://doi.org/10.1109/16.40888

Malik, R. J., Lunardi, L. M., Ryan, R. W., Shunk, S. C., & Feuer, M. D. (1989). Submicron scaling of AlGaAs/GaAs self-aligned thin emitter heterojunction bipolar transistors (SATE-HBT) with current gain independent of emitter area. Electronics Letters, 25(17), 1175–1177. https://doi.org/10.1049/el:19890788

Malik, R. J., Lunardi, L. M., Walker, J. F., & Ryan, R. W. (1988). A Planar-Doped 2D-Hole Gas Base AlGaAs/GaAs Heterojunction Bipolar Transistor Grown by Molecular Beam Epitaxy. IEEE Electron Device Letters, 9(1), 7–9. https://doi.org/10.1109/55.20396

Enquist, P., Lunardi, L. M., Welch, D. F., Wicks, G. W., Shealy, J. R., Eastman, L. F., & Calawa, A. R. (1985). OPTIMIZATION OF THE INJECTION EFFICIENCY ( gamma ) OF THE HBT BY STUDYING ELECTROLUMINESCENCE (EL) OF MBE HETEROJUNCTION DIODES. Institute of Physics Conference Series, (74), 599–604. Retrieved from http://www.scopus.com/inward/record.url?eid=2-s2.0-0022247171&partnerID=MN8TOARS

Ankri, D., Schaff, W. J., Barnard, J., Lunardi, L., & Eastman, L. F. (1983). High-speed GaAs heterojunction bipolar phototransistor grown by molecular beam epitaxy. Electronics Letters, 19(8), 278–280. https://doi.org/10.1049/el:19830195

InP-based monolithically integrated photoreceivers. Conference Proceedings. 1997 International Conference on Indium Phosphide and Related Materials. https://doi.org/10.1109/iciprm.1997.600196

Integrated p-i-n/HBT photoreceivers for optical communications. International Electron Devices Meeting. Technical Digest. https://doi.org/10.1109/iedm.1996.554064

Large-signal characteristics of InP-based heterojunction bipolar transistors and their use in optoelectronic preamplifier design. Seventh International Conference on Indium Phosphide and Related Materials. https://doi.org/10.1109/iciprm.1995.522227