Works (307)

Updated: July 5th, 2023 16:04

2015 journal article

Multipactor Coating for Sapphire RF Windows Using Remote Plasma-Assisted Deposition

IEEE TRANSACTIONS ON PLASMA SCIENCE, 43(8), 2571–2580.

By: R. Ives*, D. Zeller n, G. Lucovsky n, E. Schamiloglu*, D. Marsden*, G. Collins*, K. Nichols*, R. Karimov*

author keywords: High-power RF; klystron; multipactor; RF transmission; RF windows
Source: Web Of Science
Added: August 6, 2018

2014 journal article

Remote plasma-processing (RPP), medium range order, and precursor sites for dangling bond defects in "amorphous-Si(H)" alloys: Photovoltaic and thin film transistor devices

SURFACE & COATINGS TECHNOLOGY, 242, 183–186.

By: G. Lucovsky n, D. Zeller n, C. Cheng n & Y. Zhang n

author keywords: Hydrogenated amorphous Si; Photovoltaic applications; Thin film transistors; Fine grain polycrystalline Si; Medium range order
Source: Web Of Science
Added: August 6, 2018

2013 journal article

Band-edge electronic structure and pre-existing defects in remote plasma deposited non-crystalline SiO2 and GeO2

Japanese Journal of Applied Physics, 52(4).

By: G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

2013 article

Band-edge electronic structures, and pre-existing defects in remote plasma deposited (RPD) non-crystalline (nc-) SiO2 and GeO2

Lucovsky, G. (2013, May). SOLID-STATE ELECTRONICS, Vol. 83, pp. 30–36.

By: G. Lucovsky n

author keywords: SiO2 and GeO2; Band edge electronic structure; Pre-existing defects; Remote plasma processing; Medium range order
UN Sustainable Development Goal Categories
Source: Web Of Science
Added: August 6, 2018

2013 conference paper

Ligand field splittings in core level transitions for transition metal (TM) oxides: Tanabe-Sugano diagrams and (TM) dangling bonds in vacated O-atom defects

Xxist international symposium on the jahn-teller effect 2012, 428.

By: G. Lucovsky, K. Wu, B. Pappas & J. Whitten

Source: NC State University Libraries
Added: August 6, 2018

2013 conference paper

Nano-scale order in hydrogenated amorphous silicon a-Si,H and doped a-Si(H) defect reduction for device applications

2013 14th international conference on ultimate integration on silicon (ulis), 217–220.

By: G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

2013 journal article

Noncrystalline SiO2 and GeO2: Process induced pre-existing defects and vacated O-atom intrinsic bonding sites

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 31(1).

By: G. Lucovsky n, J. Kim n, K. Wu n & D. Zeller n

Source: Web Of Science
Added: August 6, 2018

2013 article

Process induced pre-existing defects in non-crystalline SiO2 and GeO2 at vacated O-atom bonding sites and comparisons with Ge-S(Se) alloy bonding sites

XXIST INTERNATIONAL SYMPOSIUM ON THE JAHN-TELLER EFFECT 2012, Vol. 428.

By: G. Lucovsky n, D. Zeller n, J. Kim n & K. Wu n

Source: Web Of Science
Added: August 6, 2018

2013 conference paper

Qualitative and quantitative differences between non-crystalline and nano-crystalline oxides in device technologies

2013 14th international conference on ultimate integration on silicon (ulis), 174–177.

By: G. Lucovsky & J. Kim

Source: NC State University Libraries
Added: August 6, 2018

2013 journal article

Spectroscopic Detection of Medium Range Order in Device Grade Hydrogenated Amorphous Silicon

JAPANESE JOURNAL OF APPLIED PHYSICS, 52(4).

By: G. Lucovsky n, G. Parsons n, D. Zeller n & J. Kim n

Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2013 journal article

Transport through singlet states in resistive memory materials: Magneli-phase, TinO2n-1 for 9 >= n > 3, and TiO2-HfO2 alloys

Transport through singlet states in resistive memory materials: Magneli-phase, TinO2n-1 for 9 >= n > 3, and TiO2-HfO2 alloys. Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 31(1).

By: G. Lucovsky & J. Kim

Source: NC State University Libraries
Added: August 6, 2018

2012 article

Many-Electron Multiplet Theory Applied to O-Vacancies in (i) Nanocrystalline HfO2 and (ii) Non-crystalline SiO2 and Si Oxynitride Alloys

VIBRONIC INTERACTIONS AND THE JAHN-TELLER EFFECT: THEORY AND APPLICATIONS, Vol. 23, pp. 193–211.

By: G. Lucovsky n, L. Miotti n & K. Bastos n

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

2012 article

O-Vacancies in (i) Nano-Crystalline HfO2 and (i) Non-Crystalline SiO2 and Si3N4 Studied by X-ray Absorption Spectroscopy

Lucovsky, G., Miotti, L., & Bastos, K. P. (2012, June). JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, Vol. 12, pp. 4811–4819.

By: G. Lucovsky n, L. Miotti* & K. Bastos*

author keywords: O-atom Vacancies; X-ray Absorption Spectroscopy; Transition Energies; Negative Ion States; Two Electron Multiplet Theory
MeSH headings : Computer Simulation; Crystallization; Electron Transport; Hafnium / chemistry; Materials Testing; Models, Chemical; Nanostructures / chemistry; Nanostructures / ultrastructure; Oxides / chemistry; Oxygen / chemistry; Semiconductors; Silicon Compounds / chemistry; Silicon Dioxide / chemistry; X-Ray Absorption Spectroscopy / methods
TL;DR: Two-electron multiplet theory has been used to develop a high-spin state equivalent d2 model for O-vacancy allowed transitions and negative ion states as detected by X-ray absorption spectroscopy in the O K pre-edge regime. (via Semantic Scholar)
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

2012 article

Spectroscopic Detection of Hopping Induced Mixed Valence for Ti and Sc in GdSc1-xTixO3 for x > 0.165

Lucovsky, G., Miotti, L., Bastos, K. P., Adamo, C., & Schlom, D. G. (2012, June). Spectroscopic Detection of Hopping Induced Mixed Valence for Ti and Sc in GdSc1-xTixO3 for x > 0.165. JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, Vol. 12, pp. 4749–4756.

By: G. Lucovsky n, L. Miotti*, K. Bastos*, C. Adamo & D. Schlom

author keywords: Mixed Valence States; X-ray Absorption Spectroscopy; Ti and Sc L-2,L-3 Transitions; In-Plane Hopping Conductivity; Charge Transfer Multiplet Theory
MeSH headings : Electron Transport; Magnetic Fields; Materials Testing; Nanostructures / chemistry; Nanostructures / ultrastructure; Oxides / chemistry; Particle Size; Spectrum Analysis / methods; Transition Elements / chemistry
TL;DR: This article combines X-ray absorption spectroscopy, multip let theory, charge transfer multiplet theory and degeneracy removal by Jahn-Teller effect mechanisms to demonstrate mixed valence for both Sc and Ti above a percolation threshold, x > 0.16, in which hopping transport gives rise to a metal to insulator transition. (via Semantic Scholar)
Source: Web Of Science
Added: August 6, 2018

2012 article

Spectroscopic Detection of Hopping Induced Mixed Valence of Ti and Sc in GdSc1-xTixO3 for x Greater than Percolation Threshold of 0.16

VIBRONIC INTERACTIONS AND THE JAHN-TELLER EFFECT: THEORY AND APPLICATIONS, Vol. 23, pp. 361–376.

By: G. Lucovsky n, L. Miotti n & K. Bastos n

Source: Web Of Science
Added: August 6, 2018

2011 journal article

Bond-specific reaction kinetics during the oxidation of (111) Si: Effect of n-type doping

Applied Physics Letters, 98(2).

By: B. Gokce, D. Aspnes, G. Lucovsky & K. Gundogdu

Source: NC State University Libraries
Added: August 6, 2018

2011 journal article

Characterizing the effects of etch-induced material modification on the crystallization properties of nitrogen doped Ge2Sb2Te5

JOURNAL OF APPLIED PHYSICS, 109(3).

By: J. Washington n, E. Joseph*, S. Raoux*, J. Jordan-Sweet*, D. Miller*, H. Cheng*, A. Schrott*, C. Chen* ...

Source: Web Of Science
Added: August 6, 2018

2011 journal article

Intermixing between HfO2 and GeO2 films deposited on Ge(001) and Si(001): Role of the substrate

APPLIED PHYSICS LETTERS, 98(13).

By: G. Soares*, C. Krug*, L. Miotti n, K. Bastos n, G. Lucovsky n, I. Baumvol*, C. Radtke*

Source: Web Of Science
Added: August 6, 2018

2011 journal article

Many-electron multiplet theory applied to o-atom vacancies in high-k dielectrics

Japanese Journal of Applied Physics. Part 1, Regular Papers, Short Notes & Review Papers, 50(4).

By: G. Lucovsky n, L. Miotti n & K. Bastos n

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: NC State University Libraries
Added: August 6, 2018

2011 journal article

Multiplet theory for conduction band edge and O-Vacancy defect states in SiO2, Si3N4, and Si oxynitride alloy thin films

Japanese Journal of Applied Physics. Part 1, Regular Papers, Short Notes & Review Papers, 50(4).

By: G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

2011 journal article

Nanoscale depth-resolved electronic properties of SiO2/SiOx/SiO2 for device-tolerant electronics

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 29(1).

By: E. Katz, Z. Zhang, H. Hughes, K. Chung, G. Lucovsky & L. Brillson

Source: NC State University Libraries
Added: August 6, 2018

2011 journal article

Non-crystalline SiO(2): processing induced pre-existing defects associated with vacated O-atom intrinsic bonding sites

Journal of Optoelectronics and Advanced Materials, 13(11-12), 1359–1363.

By: G. Lucovsky, J. Kim, K. Wu, D. Zeller, B. Papas & J. Whitten

Source: NC State University Libraries
Added: August 6, 2018

2011 journal article

O-vacancies in (i) nanocrystalline HfO2 and (i) noncrystalline SiO2 and Si3N4 studied by x-ray absorption spectroscopy

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 29(1).

By: G. Lucovsky n, L. Miotti n & K. Bastos n

Source: Web Of Science
Added: August 6, 2018

2011 journal article

O-vacancies in transition metal (TM) oxides: Coordination and local site symmetry of transition and negative ion states in TM2O3 and TMO2 oxides

Microelectronic Engineering, 88(7), 1471–1474.

By: G. Lucovsky n, D. Zeller n & J. Whitten n

author keywords: O-vacancy; Transition metal oxides: X-ray absorption spectroscopy; Second derivative O K pre-edge spectra; Tanabe-Sugano diagrams; Negative ion states
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Sources: Web Of Science, Crossref, NC State University Libraries
Added: August 6, 2018

2011 article

Radiation effects in new materials for nano-devices (invited)

Schrimpf, R. D., Fleetwood, D. M., Alles, M. L., Reed, R. A., Lucovsky, G., & Pantelides, S. T. (2011, July). MICROELECTRONIC ENGINEERING, Vol. 88, pp. 1259–1264.

author keywords: Reliability; Radiation effects; Total dose; Single event effects; Defects; Materials
Source: Web Of Science
Added: August 6, 2018

2011 article

Remote Plasma Enhanced Chemical Deposition of Non-Crystalline GeO2 on Ge and Si Substrates

Lucovsky, G., & Zeller, D. (2011, September). JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, Vol. 11, pp. 7974–7981.

By: G. Lucovsky* & D. Zeller*

author keywords: Remote Plasma Enhanced Chemical Vapor Deposition; Wet Chemical Cleaning; Remote Plasma-Assisted Oxide; Remote Plasma-Assisted Nitridation; Post-Deposition Annealing; X-Ray Absorption Spectroscopy; 2nd Derivative X-Ray Absorption Spectroscopy
TL;DR: Three different properties of remote plasma GeO2 films are addressed, including comparisons with remote plasma-deposited non-crystalline SiO2 on Si substrates with SiON interfacial layers, and differences between annealing of GeO1 films on Ge substrates, andSi substrates passivated with SiONS interfacial transition regions important for device applications. (via Semantic Scholar)
UN Sustainable Development Goal Categories
6. Clean Water and Sanitation (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

2011 article

Remote Plasma Processing of Sapphire Substrates for Deposition of TiN and TiO2

Lucovsky, G., & Kim, J. (2011, September). JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, Vol. 11, pp. 7962–7968.

By: G. Lucovsky n & J. Kim*

author keywords: Remote Plasma Enhanced Chemical Vapor Deposition; In Line Auger Electron Spectroscopy; Remote Plasma-Assisted Oxide; Remote Plasma Assisted Nitridation; Post-Deposition Annealing; X-Ray Absorption Spectroscopy
TL;DR: The paper uses remote plasma assisted deposition, oxidation and nitridation processes for depositing thin films of metallic TiN on crystalline sapphire (0001) substrates that are being studied as window materials for high power radio frequency (RF) power tubes. (via Semantic Scholar)
Source: Web Of Science
Added: August 6, 2018

2011 journal article

Remote plasma-deposited GeO2 with quartz-like Ge- and O-local bonding: Band-edge state and O-vacancy comparisons with SiO2

Microelectronic Engineering, 88(7), 1537–1540.

By: G. Lucovsky n, D. Zeller n, K. Wu n & J. Whitten n

author keywords: Remote plasma deposition; Plasma-deposited GeO2; X-ray absorption spectroscopy; Tanabe-Sugano diagrams; Band-edge states; O-vacancy defects
Sources: Web Of Science, Crossref, NC State University Libraries
Added: August 6, 2018

2011 journal article

Spectroscopic detection of hopping induced mixed valence for Ti and Sc in GdSc1-xTixO3 for x greater than the percolation threshold of similar to 0.16

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 29(1).

By: G. Lucovsky, L. Miotti, K. Bastos, C. Adamo & D. Schlom

Source: NC State University Libraries
Added: August 6, 2018

2011 journal article

Spectroscopic detection of medium range order in device quality hydrogenated amorphous silicon, a-Si(H)

Journal of Optoelectronics and Advanced Materials, 13(11-12), 1586–1589.

By: G. Lucovsky, G. Parsons, D. Zeller, K. Wu, B. Papas, J. Whitten, R. Lujan, R. Street

Source: NC State University Libraries
Added: August 6, 2018

2010 conference paper

A microscopic bonding model for the compositional dependence of the first sharp diffraction peak (FSDP) in GexSe1-x alloys

Physica status solidi c - current topics in solid state physics, vol 7 no 3-4, 7(3-4), 889–892.

By: G. Lucovsky & J. Phillips

Source: NC State University Libraries
Added: August 6, 2018

2010 article

Analysis of the forgotten parts of the Ge K edge spectra: life before the EXAFS oscillations

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7 NO 3-4, Vol. 7, pp. 844–847.

By: G. Lucovsky n, J. Washington n, L. Miotti n & M. Paesler n

Source: Web Of Science
Added: August 6, 2018

2010 journal article

Enhanced leakage current properties of Ni-doped Ba0.6Sr0.4TiO3 thin films driven by modified band edge state

Journal of Applied Physics, 107(2).

By: H. Seo, Y. Kim, G. Lucovsky, I. Kim, K. Chung, H. Kobayashi, D. Choi

Source: NC State University Libraries
Added: August 6, 2018

2010 article

Ge doped HfO2 thin films investigated by x-ray absorption spectroscopy

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, Vol. 28, pp. 693–696.

By: L. Miotti n, K. Bastos n, G. Lucovsky n, C. Radtke* & D. Nordlund*

Source: Web Of Science
Added: August 6, 2018

2010 article

Monoclinic textured HfO2 films on GeOxNy/Ge(100) stacks using interface reconstruction by controlled thermal processing

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, Vol. 28, pp. 662–664.

By: K. Bastos n, L. Miotti n, G. Lucovsky n, K. Chung* & D. Nordlund*

Source: Web Of Science
Added: August 6, 2018

2010 article

Nano-regime Length Scales Extracted from the First Sharp Diffraction Peak in Non-crystalline SiO2 and Related Materials: Device Applications

Lucovsky, G., & Phillips, J. C. (2010, March). NANOSCALE RESEARCH LETTERS, Vol. 5, pp. 550–558.

By: G. Lucovsky n & J. Phillips*

author keywords: Non-crystalline materials; Nano-crystalline thin films; Nano-crystalline/non-crystalline composites; Chemical bonding self-organizations; Percolation theory
TL;DR: The unique properties of non-crystalline SiO2 are explained by the encapsulation of six-member ring clusters by five- and seven-member rings on average in a compliant hard-soft nano-scaled inhomogeneous network, enabling for applications including thermally grown ~1.5 nm SiO 2 layers for Si field effect transistor devices to optical components with centimeter dimensions. (via Semantic Scholar)
Source: Web Of Science
Added: August 6, 2018

2010 journal article

Strain-reducing chemical bonding self-organizations in nanocrystalline composites and non-crystalline glasses and thin films

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 207(3), 631–634.

By: G. Lucovsky n

Source: Web Of Science
Added: August 6, 2018

2010 journal article

Untitled

Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 28(6), P1–1.

By: G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

2009 article

Application of non-linear optical second harmonic generation and X-ray absorption and spectroscopies to defect related properties of Hf silicate and Hf Si oxynitride gate dielectrics

MICROELECTRONIC ENGINEERING, Vol. 86, pp. 1654–1657.

By: K. Gundogdu n, G. Lucovsky n, K. Chung n, J. Kim n & D. Nordlund*

author keywords: Hf oxide based dielectrics; Phase separated Hf silicates; Hf Si oxynitrides; Non-linear optical second harmonic generation; X-ray absorption spectroscopy; Vacancy defects; Elimination of macroscopic strain
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2009 book

Bonds and bands in semiconductors

New York: Momentum Press.

By: J. Phillips & G. Lucovsky.

Source: NC State University Libraries
Added: August 6, 2018

2009 article

Comparisons between intrinsic bonding defects in d(0) transition metal oxide such as HfO2, and impurity atom defects in d(0) complex oxides such as GdScO3

Lucovsky, G., Chung, K.-B., Miotti, L., Bastos, K. P., Amado, C., & Schlom, D. (2009, December). SOLID-STATE ELECTRONICS, Vol. 53, pp. 1273–1279.

By: G. Lucovsky n, K. Chung*, L. Miotti n, K. Bastos n, C. Amado* & D. Schlom*

author keywords: Transition metal elemental oxides; Complex oxides; Vacancy defects; Alternative valence defects and alloy atoms; Insulator metal phase transition
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

2009 article

Controlled chemical phase separation in binary and ternary composites: A pathway to isotropic optical and electrical behavior for device applications

Lucovsky, G. (2009, May). PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, Vol. 206, pp. 915–918.

By: G. Lucovsky n

Source: Web Of Science
Added: August 6, 2018

2009 journal article

Extrinsic interface formation of HfO2 and Al2O3/GeOx gate stacks on Ge (100) substrates

JOURNAL OF APPLIED PHYSICS, 106(4).

By: H. Seo*, F. Bellenger*, K. Chung n, M. Houssa*, M. Meuris*, M. Heyns*, G. Lucovsky n

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

2009 journal article

Instability of incorporated nitrogen in HfO2 films grown on strained Si0.7Ge0.3 layers

APPLIED PHYSICS LETTERS, 94(4).

By: K. Chung n, G. Lucovsky n, W. Lee*, M. Cho* & H. Jeon*

author keywords: annealing; chemical interdiffusion; Ge-Si alloys; hafnium compounds; high-k dielectric thin films; ion-surface impact; nitrogen; surface chemistry; thermal stability; XANES; X-ray photoelectron spectra
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

2009 article

Interfacial transition regions at germanium/Hf oxide based dielectric interfaces: Qualitative differences between non-crystalline Hf Si oxynitride and nanocrystalline HfO2 gate stacks

Lucovsky, G., Lee, S., Long, J. P., Seo, H., & Luening, J. (2009, March). MICROELECTRONIC ENGINEERING, Vol. 86, pp. 224–234.

By: G. Lucovsky n, S. Lee n, J. Long n, H. Seo n & J. Luening

author keywords: High-K gate dielectrics; MOS devices; Interfacial transition regions; X-ray absorption spectroscopy; Spectroscopic ellipsometry; Di-vacancy defects; Native Ge dielectrics; Ge Substrates
Source: Web Of Science
Added: August 6, 2018

2009 journal article

Intrinsic bonding defects in thin-film non-crystalline solids: Amorphous silicon (a-Si), hydrogenated amorphous silicon (a-Si:H), amorphous selenium (a-Se) and amorphous selenium-arsenic alloys (a-AsxSe1-x)

PHILOSOPHICAL MAGAZINE, 89(28-30), 2449–2460.

By: G. Lucovsky n

author keywords: amorphous silicon; hydrogenated amorphous silicon; amorphous selenium; amorphous selenium arsenic alloys; intrinsic defects; chemical bonding self-organization; bond constraint theory; percolation theory
Source: Web Of Science
Added: August 6, 2018

2009 conference paper

Long range cooperative and local Jahn-Teller effects in nanocrystalline transition metal thin films

Jahn-teller effect: fundamentals and implications for physics and chemistry, 97, 767–808.

By: G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

2009 article

Microscopic description of strain-reducing chemical bonding self-organizations in non-crystalline alloys

Lucovsky, G., & Phillips, J. C. (2009, May). PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, Vol. 206, pp. 885–891.

By: G. Lucovsky n & J. Phillips*

Source: Web Of Science
Added: August 6, 2018

2009 conference paper

Predeposition plasma nitridation process applied to Ge substrates to passivate interfaces between crystalline-Ge substrates and Hf-based high-K dielectrics

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 27(1), 294–299.

By: G. Lucovsky, J. Long, K. Chung, H. Seo, B. Watts, R. Vasic, M. Ulrich

Source: NC State University Libraries
Added: August 6, 2018

2009 journal article

Preparation of Native Oxide and Carbon-Minimized Ge Surface by NH4OH-Based Cleaning for High-k/Ge MOS Gate Stacks

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 156(11), H813–H817.

By: H. Seo*, K. Chung n, J. Long n & G. Lucovsky n

Source: Web Of Science
Added: August 6, 2018

2009 article

Spectroscopic differentiation between O-atom vacancy and divacancy defects, respectively, in TiO2 and HfO2 by X-ray absorption spectroscopy

MICROELECTRONIC ENGINEERING, Vol. 86, pp. 1676–1679.

By: G. Lucovsky n, K. Chung n, J. Kim n & D. Norlund*

author keywords: Monovacancies; Divacancies; X-ray absorption spectroscopy; Pre-edge regime; Bound resonance states; Immobile and mobile vacancies
Source: Web Of Science
Added: August 6, 2018

2009 article

Strain-eliminating chemical bonding self-organizations within intermediate phase (IP) windows in chalcogenide, oxide and nitride non-crystalline bulk glasses and deposited thin film binary, ternary and quaternary alloys

Lucovsky, G., & Phillips, J. C. (2009, October 1). JOURNAL OF NON-CRYSTALLINE SOLIDS, Vol. 355, pp. 1786–1791.

By: G. Lucovsky n & J. Phillips*

author keywords: Amorphous semiconductors; Glass transition; Chalcogenides; Mechanical, stress relaxation; Percolation; Oxide glasses; Alkali silicates; Borosilicates; Medium-range order; Structural relaxation
Source: Web Of Science
Added: August 6, 2018

2009 journal article

Symmetry determined medium range order (MRO) contributions to the first sharp diffraction peak (FSDP) in non-crystalline oxide and chalcogenide glasses

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 246(8), 1806–1812.

By: G. Lucovsky n & J. Phillips*

Source: Web Of Science
Added: August 6, 2018

2009 conference paper

The influence of nitrogen doping on the chemical and local bonding environment of amorphous and crystalline Ge2Sb2Te5

Materials and physics for nonvolatile memories, 1160, 163–168.

By: J. Washington n, E. Josep n, M. Paesler n, G. Lucovsky n, J. Jordan-Sweet, S. Raoux*, C. Chen, A. Pyzyna ...

Source: NC State University Libraries
Added: August 6, 2018

2009 journal article

Thermal evolution and electrical correlation of defect states in Hf-based high-k dielectrics on n-type Ge (100): Local atomic bonding symmetry

Journal of Applied Physics, 106(7).

By: K. Chung, J. Long, H. Seo, G. Lucovsky & D. Nordlund

Source: NC State University Libraries
Added: August 6, 2018

2008 article

Bond constraint theory and the quest for the glass computer

Agarwal, S. C., Paesler, M. A., Baker, D. A., Taylor, P. C., Lucovsky, G., & Edwards, A. (2008, February). PRAMANA-JOURNAL OF PHYSICS, Vol. 70, pp. 245–254.

By: S. Agarwal*, M. Paesler n, D. Baker n, P. Taylor*, G. Lucovsky n & A. Edwards*

author keywords: switching; chalcogenide glass; bond constraint theory
TL;DR: How GST behaves as a switch and how X-ray absorption fine structure can be used to unlock the specifics of the switching process are explained and the tool that leads to this deeper understanding is the bond constraint theory. (via Semantic Scholar)
UN Sustainable Development Goal Categories
9. Industry, Innovation and Infrastructure (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

2008 journal article

Bond constraint theory studies of chalcogenide phase change memories

Journal of Non-Crystalline Solids, 354(19-25), 2706–2710.

By: M. Paesler, D. Baker & G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

2008 journal article

Bulk defects in nano-crystalline and in non-crystalline HfO2-based thin film dielectrics

THIN SOLID FILMS, 517(1), 437–440.

By: S. Lee n, H. Seo n, G. Lucovsky n, L. Fleming n, M. Ulrich n & J. Luening

author keywords: Thin film high-k dielectrics; Non-crystalline transition metal oxides; Nano-crystalline transition metal oxides; Bulk defects; Intrinsic bonding defects; Divacancies
Source: Web Of Science
Added: August 6, 2018

2008 journal article

Chemical bonding and graded interfacial transition regions at transition metal, Hf(Zr),/high-k gate dielectric, Hf(Zr)O(2), interfaces

THIN SOLID FILMS, 517(1), 343–345.

By: G. Lucovsky n & J. Whitten n

author keywords: High-k dielectrics; Hf(Zr)O(2); Transition metal; Chemical bonding; Graded interfacial regions; O-atom vacancies; Discrete band edge
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2008 article

Defect scaling in non-crystalline floppy/under-constrained and rigid/over-constrained thin films: Applications to a-Se, a-Si, and a-Si(H)

Lucovsky, G., Kasap, S. O., & Phillips, J. C. (2008, May 1). JOURNAL OF NON-CRYSTALLINE SOLIDS, Vol. 354, pp. 2724–2727.

By: G. Lucovsky n, S. Kasap* & J. Phillips*

author keywords: amorphous semiconductors; silicon; thin film transistors; nanocrystals; synchrotron radiation; UPS/XPS; glass transition; oxynitride glasses; chalcogenides; defects; nano-clusters; silica; medium-range order; short-range order
Source: Web Of Science
Added: August 6, 2018

2008 journal article

Elimination of GeO2 and Ge3N4 interfacial transition regions and defects at n-type Ge interfaces: A pathway for formation of n-MOS devices on Ge substrates

Applied Surface Science, 254(23), 7933–7937.

By: G. Lucovsky*, S. Lee, J. Long*, H. Seo & J. Luning

Source: NC State University Libraries
Added: August 6, 2018

2008 journal article

Length scale discontinuities between non-crystalline and nano-crystalline thin films: Chemical bonding self-organization, broken constraints and reductions of macroscopic strain

Journal of Non-Crystalline Solids, 354(19-25), 2702–2705.

By: G. Lucovsky & J. Phillips

Source: NC State University Libraries
Added: August 6, 2018

2008 journal article

Low energy electron-excited nanoscale luminescence spectroscopy studies of intrinsic defects in HfO2 and SiO2-HfO2-SiO2-Si stacks

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 26(1), 232–243.

By: Y. Strzhemechny, M. Bataiev, S. Tumakha, S. Goss, C. Hinkle, C. Fulton, G. Lucovsky, L. Brillson

Source: NC State University Libraries
Added: August 6, 2018

2008 article

Reversible chemical phase separation in on-state of art ReWritable (RW) Ge2Sb2Te5 optical phase change memories

Lucovsky, G., & Phillips, J. C. (2008, May 1). JOURNAL OF NON-CRYSTALLINE SOLIDS, Vol. 354, pp. 2753–2756.

By: G. Lucovsky n & J. Phillips*

author keywords: amorphous semiconductors; crystallization; synchrotron radiation; chalcogenides; laser-matter interactions; microcrystallinity; percolation; nano-clusters; nano-crystals; optical properties; reflectivity; defects; medium-range order; short-range order; glass transition
Source: Web Of Science
Added: August 6, 2018

2008 journal article

Suppression of Ge-O and Ge-N bonding at Ge-HfO2 and Ge-TiO2 interfaces by deposition onto plasma-nitrided passivated Ge substrates

THIN SOLID FILMS, 517(1), 155–158.

By: S. Lee n, J. Long n, G. Lucovsky n & J. Luening

author keywords: Ge/dielectric interfaces; Remote plasma nitridation of Ge; Band edge defects; Remote plasma deposition; Thermal annealing
Source: Web Of Science
Added: August 6, 2018

2008 journal article

Suppression of Ge-O and Ge-N bonding at Ge-HfO2 and Ge-TiO2 interfaces by deposition onto plasma-nitrided passivated Ge substrates: Integration issues Ge gate stacks into advanced devices

MICROELECTRONICS RELIABILITY, 48(3), 364–369.

By: S. Lee n, J. Long n, G. Lucovsky n, J. Whitten n, H. Seo n & J. Luning*

TL;DR: Near edge X-ray absorption spectroscopy (NEXAS) has been used to determine nano-scale morphology of thin films of nano-crystalline transition metal (TM) elemental oxides and identifies a new and novel application for NEXAS based on the resonant character of the respective O K{sub 1} and N K{ sub 1} edge absorptions. (via Semantic Scholar)
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2008 journal article

Suppression of defect states in HfSiON gate dielectric films on n-type Ge(100) substrates

APPLIED PHYSICS LETTERS, 93(18).

By: K. Chung n, H. Seo n, J. Long n & G. Lucovsky n

author keywords: annealing; conduction bands; defect states; diffusion; ellipsometry; germanium; hafnium compounds; high-k dielectric thin films; ion-surface impact; X-ray absorption spectra
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

2007 journal article

A new class of intermediate phases in non-crystalline films based on a confluent double percolation mechanism

Journal of Physics. Condensed Matter, 19(45).

By: G. Lucovsky & J. Phillips

Source: NC State University Libraries
Added: August 6, 2018

2007 journal article

A self-consistent model for defect states in a-Si and a-Si : H

Journal of Materials Science. Materials in Electronics., 18, S463–467.

By: G. Lucovsky & J. Phillips

Source: NC State University Libraries
Added: August 6, 2018

2007 review

Band edge electronic structure of transition metal/rare earth oxide dielectrics

[Review of ]. Rare Earth Oxide Thin Films: Growth , Characterization , and Applications, 106, 285–311. Berlin: Springer-Verlag Berlin.

By: G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

2007 journal article

Bond constraint theory and EXAFS studies of local bonding structures of Ge2Sb2Te4, Ge2Sb2Te5, and Ge2Sb2Te7

Journal of Optoelectronics and Advanced Materials, 9(10), 2996–3001.

By: M. Paesler, D. Baker, G. Lucovsky, P. Taylor & J. Washington

Source: NC State University Libraries
Added: August 6, 2018

2007 article

Chemical self-organization length scales in non- and nano-crystalline thin films

Lucovsky, G., & Phillips, J. C. (2007, October). SOLID-STATE ELECTRONICS, Vol. 51, pp. 1308–1318.

By: G. Lucovsky n & J. Phillips*

author keywords: chemical self-organizations; length scales; non-crystalline thin films; nano-crystalline thin films; broken bond-bending constraints; semi-empirical bond-constraint theory
Source: Web Of Science
Added: August 6, 2018

2007 article

Defect reduction by suppression of pi-bonding coupling in nano- and non-crystalline high-(medium)-kappa gate dielectrics

MICROELECTRONIC ENGINEERING, Vol. 84, pp. 2350–2353.

author keywords: high-/medium-kappa dielectrics; spectroscopic studies; fundamental electronic states; band edge defects
Source: Web Of Science
Added: August 6, 2018

2007 journal article

Defect reduction in non-crystalline and nano-crystalline thin films: chemical bonding self-organizations and minimization of macroscopic strain

Journal of Optoelectronics and Advanced Materials, 9(10), 2989–2995.

By: G. Lucovsky & J. Phillips

Source: NC State University Libraries
Added: August 6, 2018

2007 article

EXAFS study of local order in the amorphous chalcogenide semiconductor Ge2Sb2Te5

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, Vol. 68, pp. 873–877.

By: M. Paesler n, D. Baker n, G. Lucovsky n, A. Edwards* & P. Taylor*

author keywords: chalcogenides; glasses; optical materials; XAFS; phase transitions
Source: Web Of Science
Added: August 6, 2018

2007 journal article

Effect of Ga on the structure of Ge-Se-Ga glasses from thermal analysis, Raman and XPS measurements

Journal of Materials Science. Materials in Electronics., 18, S367–370.

By: K. Maeda, T. Sakai, K. Sakai, T. Ikari, M. Munzar, D. Tonchev, S. Kasap, G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

2007 journal article

Intermediate phases in binary and ternary alloys. How far can we go with a semi-empirical bond-constraint theory?

Journal of Optoelectronics and Advanced Materials, 9(10), 2979–2988.

By: G. Lucovsky, D. Baker, M. Paesler, J. Phillips & M. Thorpe

Source: NC State University Libraries
Added: August 6, 2018

2007 journal article

Intermediate phases in binary and ternary alloys: a new perspective on semi-empirical bond constraint theory

Journal of Physics. Condensed Matter, 19(45).

By: G. Lucovsky & J. Phillips

Source: NC State University Libraries
Added: August 6, 2018

2007 article

Intrinsic electronically active defects in transition metal elemental oxides

Lucovsky, G., Seo, H., Lee, S., Fleming, L. B., Ulrich, M. D., Luning, J., … Bersuker, G. (2007, April). JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, Vol. 46, pp. 1899–1909.

By: G. Lucovsky n, H. Seo n, S. Lee n, L. Fleming n, M. Ulrich n, J. Luning*, P. Lysaght, G. Bersuker

author keywords: transition metal oxides; crystal field and Jahn-Teller d-state splittings; ab initio molecular orbital theory; valence and conduction band states; intrinsic defect states; coherent pi-bonding interactions; nanocrystalline length scales of order
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

2007 article

Jahn-Teller d-state term splittings in Ti, Zr, and Hf elemental oxides: Intrinsic bonding/anti-bonding states and conduction/valence band edge intrinsic defects

Lucovsky, G. (2007, July 16). JOURNAL OF MOLECULAR STRUCTURE, Vol. 838, pp. 187–192.

By: G. Lucovsky n

author keywords: transition metal oxides; crystal field and Jahn-Teller d-state splittings; ab initio molecular orbital theory; intrinsic bonding states; intrinsic defect states
Source: Web Of Science
Added: August 6, 2018

2007 article

Length scales for coherent pi-bonding interactions in complex high-k oxide dielectrics and their interfaces

MICROELECTRONIC ENGINEERING, Vol. 84, pp. 2298–2301.

By: H. Seo n, G. Lucovsky n, L. Fleming n, M. Ulrich n, J. Luning*, G. Koster*, T. Geballe*

author keywords: length scales of order; spectroscopic studies; nanocrystalline complex oxides and complex oxide alloys
Source: Web Of Science
Added: August 6, 2018

2007 article

Local bonding arrangements in amorphous Ge2Sb2Te5: the importance of Ge and Te bonding

Baker, D. A., Paesler, M. A., & Lucovsky, G. (2007, October). JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, Vol. 18, pp. S399–S403.

By: D. Baker n, M. Paesler n & G. Lucovsky n

Source: Web Of Science
Added: August 6, 2018

2007 article

Metal gate electrodes for devices with high-k gate dielectrics: Zr/ZrO2 and Hf/HfO2 intrinsic interfacial transition regions

MICROELECTRONIC ENGINEERING, Vol. 84, pp. 2259–2262.

By: G. Lucovsky n & J. Whitten n

author keywords: transition metal oxides; metal oxide interfaces; ab initio molecular orbital theory; electronegativity equalization
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2007 article

Metal gate electrodes: Theoretical studies of Zr/ZrO2 and Hf/HfO2 interfaces

Lucovsky, G., & Whitten, J. L. (2007, September 15). SURFACE SCIENCE, Vol. 601, pp. 4138–4143.

By: G. Lucovsky n & J. Whitten n

author keywords: transition metal oxides; metal oxide interfaces; Ab initio molecular orbital theory; electronegativity equalization
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2007 journal article

Origin of charge density at LaAlO3 on SrTiO3 heterointerfaces: Possibility of intrinsic doping

PHYSICAL REVIEW LETTERS, 98(19).

By: W. Siemons*, G. Koster*, H. Yamamoto*, W. Harrison*, G. Lucovsky n, T. Geballe*, D. Blank*, M. Beasley*

TL;DR: Based on transport, spectroscopic, and oxygen-annealing experiments, it is concluded that extrinsic defects in the form of oxygen vacancies introduced by the pulsed laser deposition process used by all researchers to date to make these samples is the source of the large carrier densities. (via Semantic Scholar)
Source: Web Of Science
Added: August 6, 2018

2007 article

Spectroscopic and electrical detection of intermediate phases and chemical bonding self-organizations in (i) dielectric films for semiconductor devices, and (ii) chalcogenide alloys for optical memory devices

Lucovsky, G., Baker, D. A., Paesler, M. A., & Phillips, J. C. (2007, June 15). JOURNAL OF NON-CRYSTALLINE SOLIDS, Vol. 353, pp. 1713–1722.

By: G. Lucovsky n, D. Baker n, M. Paesler n & J. Phillips*

author keywords: amorphous semiconductors; silicon; thin film transistors; plasma deposition; sputtering; defects; short-range order; stress relaxation
UN Sustainable Development Goal Categories
4. Quality Education (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

2007 article

Spectroscopic studies of O-vacancy defects in transition metal oxides

Lucovsky, G., Luening, J., Fleming, L. B., Ulrich, M. D., Rowe, J. E., Seo, H., … Bersuker, G. (2007, October). JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, Vol. 18, pp. S263–S266.

By: G. Lucovsky n, J. Luening, L. Fleming n, M. Ulrich n, J. Rowe*, H. Seo n, S. Lee n, P. Lysaght, G. Bersuker

UN Sustainable Development Goal Categories
13. Climate Action (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

2007 article

Studies of bonding defects, and defect state suppression in HfO2 by soft X-ray absorption and photoelectron spectroscopies

Lucovsky, G., Seo, H., Fleming, L. B., Luening, J., Lysaght, P., & Bersuker, G. (2007, September 15). SURFACE SCIENCE, Vol. 601, pp. 4236–4241.

By: G. Lucovsky n, H. Seo n, L. Fleming n, J. Luening, P. Lysaght & G. Bersuker

author keywords: transition metal oxides; crystal field and Jahn-Teller d-state splittings; Ab initio molecular orbital theory; intrinsic bonding states; intrinsic defect states
Source: Web Of Science
Added: August 6, 2018

2007 article

Total dose and bias temperature stress effects for HfSiON on Si MOS capacitors

Chen, D. K., Mamouni, E. E., Zhou, X. J., Schrimpf, R. D., Fleetwood, D. M., Galloway, K. F., … Cressler, J. D. (2007, December). IEEE TRANSACTIONS ON NUCLEAR SCIENCE, Vol. 54, pp. 1931–1937.

By: D. Chen*, E. Mamouni*, X. Zhou*, R. Schrimpf*, D. Fleetwood*, K. Galloway*, S. Lee n, H. Seo n ...

author keywords: alternative dielectrics; bias-temperature instability; HfSiON; nitridation; total-dose irradiation
Source: Web Of Science
Added: August 6, 2018

2006 article

"Thermal stability of TiO2, ZrO2, or HfO2 on Si(100) by photoelectron emission microscopy" (vol 99, pg 023519, 2006)

Zeman, M. C., Fulton, C. C., Lucovsky, G., Nemanich, R. J., & Yang, W. C. (2006, May 15). JOURNAL OF APPLIED PHYSICS, Vol. 99.

By: M. Zeman n, C. Fulton n, G. Lucovsky n, R. Nemanich n & W. Yang*

Source: Web Of Science
Added: August 6, 2018

2006 article

A study of conduction band edge states in complex oxides by X-ray absorption spectroscopy

Fulton, C. C., Edge, L. F., Lucovsky, G., & Luning, J. (2006, November). RADIATION PHYSICS AND CHEMISTRY, Vol. 75, pp. 1934–1938.

By: C. Fulton n, L. Edge*, G. Lucovsky n & J. Luning*

author keywords: X-ray absorption spectra; Jahn-Teller slittings; crystal field splittings; local bonding symmetry
Source: Web Of Science
Added: August 6, 2018

2006 journal article

Application of bond constraint theory to the switchable optical memory material Ge2Sb2Te5

PHYSICAL REVIEW LETTERS, 96(25).

By: D. Baker n, M. Paesler n, G. Lucovsky n, S. Agarwal n & P. Taylor*

TL;DR: A new extended x-ray-absorption fine structure spectroscopy study of local bonding identifies for the first time significant concentrations of Ge-Ge bonds in amorphous Ge2Sb2Te5. (via Semantic Scholar)
Source: Web Of Science
Added: August 6, 2018

2006 article

Band edge electronic structure of transition metal/rare earth oxide dielectrics

Lucovsky, G. (2006, October 31). APPLIED SURFACE SCIENCE, Vol. 253, pp. 311–321.

By: G. Lucovsky n

author keywords: X-ray absorption spectroscopy; X-ray photoelectron spectroscopy; X-ray diffraction; transition metal and rare earth elemental and complex oxides; non-crystalline and nano-crystalline dielectrics
Source: Web Of Science
Added: August 6, 2018

2006 article

Comparison of ultrathin SiO2/Si(100) and SiO2/Si(111) interfaces from soft x-ray photoelectron spectroscopy

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol. 24, pp. 2132–2137.

By: M. Ulrich n, J. Rowe* & J. Keister*

Source: Web Of Science
Added: August 6, 2018

2006 article

Detection of nanocrystallinity by X-ray absorption spectroscopy in thin film transition metal/rare-earth atom, elemental and complex oxides

Edge, L. F., Schlom, D. G., Stemmer, S., Lucovsky, G., & Luning, J. (2006, November). RADIATION PHYSICS AND CHEMISTRY, Vol. 75, pp. 1608–1612.

By: L. Edge*, D. Schlom*, S. Stemmer*, G. Lucovsky n & J. Luning*

author keywords: X-ray absorption spectra; nanocrystallinity; X-ray absorption spectroscopy; elemental oxides; complex oxides; Jahn-Teller spittings; O-atom vacancies
UN Sustainable Development Goal Categories
Source: Web Of Science
Added: August 6, 2018

2006 journal article

Differences between charge trapping states in irradiated nano-crystalline HfO2 and non-crystalline Hf silicates

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 53(6), 3644–3648.

By: G. Lucovsky n, D. Fleetwood*, S. Lee n, H. Seo n, R. Schrimpf*, J. Felix*, J. Luning n, L. Fleming n, M. Ulrich n, D. Aspnes n

author keywords: charge trapping; electron traps; high-K dielectrics; hole traps; metal-oxide-semiconductor (MOS) devices; oxide-trap charge
Source: Web Of Science
Added: August 6, 2018

2006 article

EXAFS study of amorphous Ge2Sb2Te5

Baker, D. A., Paesler, M. A., Lucovsky, G., & Taylor, P. C. (2006, June 15). JOURNAL OF NON-CRYSTALLINE SOLIDS, Vol. 352, pp. 1621–1623.

By: D. Baker n, M. Paesler n, G. Lucovsky n & P. Taylor*

author keywords: chalcogenide glasses; switching; EXAFS
Source: Web Of Science
Added: August 6, 2018

2006 journal article

EXAFS study of local order in the amorphous chalcogenide semiconductor Ge2Sb2Te5

Journal of Optoelectronics and Advanced Materials, 8(6), 2039–2043.

By: M. Paesler, D. Baker, G. Lucovsky, A. Edwards & P. Taylor

Source: NC State University Libraries
Added: August 6, 2018

2006 journal article

Electronic properties of the Zr-ZrO2-SiO2-Si(100) gate stack structure

JOURNAL OF APPLIED PHYSICS, 99(6).

By: C. Fulton n, G. Lucovsky n & R. Nemanich n

Source: Web Of Science
Added: August 6, 2018

2006 article

Intrinsic bonding defects in transition metal elemental oxides

MICROELECTRONICS RELIABILITY, Vol. 46, pp. 1623–1628.

By: G. Lucovsky n, H. Seo n, L. Fleming n, M. Ulrich n, J. Luning*, P. Lysaght, G. Bersuker

TL;DR: Three engineering solutions for defect reduction are identified: deposition of ultra-thin, < 2 nm, HfO2 dielectric layers, in which grain boundary formation is suppressed by effectively eliminating inter-primitive unit cell π-bonding interactions. (via Semantic Scholar)
Source: Web Of Science
Added: August 6, 2018

2006 article

Intrinsic nanocrystalline grain-boundary and oxygen atom vacancy defects in ZrO2 and HfO2

Lucovsky, G., Hinkle, C. L., Fulton, C. C., Stoute, N. A., Seo, H., & Luning, J. (2006, November). RADIATION PHYSICS AND CHEMISTRY, Vol. 75, pp. 2097–2101.

By: G. Lucovsky n, C. Hinkle n, C. Fulton n, N. Stoute n, H. Seo n & J. Luning*

author keywords: X-ray absorption spectra; transition metal oxides; X-ray absorption spectra; Jahn-Teller splittings; conduction band edge states; grain-boundary defect states; oxygen atom vacancies; interfacial traps
Source: Web Of Science
Added: August 6, 2018

2006 article

Network disruption and modification in arsenic and germanium chalcogenides by the addition of univalent metal sulfides and selenides: Comparisons with network disruption and modification in zirconium silicate alloys

Lucovsky, G., & Phillips, J. C. (2006, June 15). JOURNAL OF NON-CRYSTALLINE SOLIDS, Vol. 352, pp. 1534–1538.

By: G. Lucovsky n & J. Phillips*

author keywords: chalcogenides; silicates; phases and equilibria
Source: Web Of Science
Added: August 6, 2018

2006 article

Reduction of bonding constraints by self-organization in gate dielectrics for a-Si : H thin film transistors (TFTs) and crystalline Si field effect transistors (FETs)

Lucovsky, G., & Phillips, J. C. (2006, June 15). JOURNAL OF NON-CRYSTALLINE SOLIDS, Vol. 352, pp. 1711–1714.

By: G. Lucovsky n & J. Phillips*

author keywords: thin film dielectrics; a-Si thin film transistors; c-Si field effect transistors; strain relieving self-organizations; intermediate phases; hydrogenated silicon nitrides; ZrSi oxynitrides
Source: Web Of Science
Added: August 6, 2018

2006 article

Reduction of bulk and interface defects by network self-organizations in gate dielectrics for silicon thin film and field effect transistors (TFTs and FETs, respectively)

Lucovsky, G., & Phillips, J. C. (2006, November 15). JOURNAL OF NON-CRYSTALLINE SOLIDS, Vol. 352, pp. 4509–4516.

By: G. Lucovsky n & J. Phillips*

author keywords: thin film transistors; structural relaxation
Source: Web Of Science
Added: August 6, 2018

2006 journal article

Reduction of defects by network self-organizations in non-crystalline dielectrics and semiconductors: a tribute to Professor Radu Grigorovici on the occasion of his 95(th) birthday

Journal of Optoelectronics and Advanced Materials, 8(6), 1969–1978.

By: G. Lucovsky & J. Phillips

Source: NC State University Libraries
Added: August 6, 2018

2006 article

Suppression of Jahn-Teller term-split band edge states in the x-ray absorption spectra of non-crystalline Zr silicates and Si oxynitride alloys, and alloys of ZrO2 with Y2O3

Lucovsky, G., Fulton, C. C., Ju, B. S., Stoute, N. A., Tao, S., Aspnes, D. E., & Luening, J. (2006, November). RADIATION PHYSICS AND CHEMISTRY, Vol. 75, pp. 1591–1595.

By: G. Lucovsky n, C. Fulton n, B. Ju n, N. Stoute n, S. Tao n, D. Aspnes n, J. Luening

author keywords: x-ray absorption spectra; x-ray absorption spectroscopy; Jahn-Teller term-spit states; Zr silicate alloys; cubic zirconia and hafnia
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2006 journal article

Thermal stability of TiO2, ZrO2, or HfO2 on Si(100) by photoelectron emission microscopy

JOURNAL OF APPLIED PHYSICS, 99(2).

By: M. Zeman n, C. Fulton n, G. Lucovsky n, R. Nemanich n & W. Yang*

UN Sustainable Development Goal Categories
14. Life Below Water (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

2005 article

Bond strain and defects at interfaces in high-k gate stacks

MICROELECTRONICS RELIABILITY, Vol. 45, pp. 770–778.

By: G. Lucovsky n & J. Phillips*

TL;DR: The interfacial self-organizations, and intrinsic interface defects are addressed through an extension of bond constraint theory from bulk glasses to interfaces between non-crystalline SiO 2 , and (i) crystalline Si, and (ii) non- Crystalline and crystalline alternative gate dielectric materials. (via Semantic Scholar)
Source: Web Of Science
Added: August 6, 2018

2005 article

Conduction band states of transition metal (TM) high-k gate dielectrics as determined from X-ray absorption spectra

MICROELECTRONICS RELIABILITY, Vol. 45, pp. 827–830.

By: G. Lucovsky n, J. Hong n, C. Fulton n, N. Stoute n, Y. Zou n, R. Nemanich n, D. Aspnes n, H. Ade n, D. Schlom*

TL;DR: X-ray absorption spectroscopy studies identify the nature of the lowest conduction band d∗ states, which define the optical band gap, Eg, and the conductionBand offset energy with respect to crystalline Si, EB. (via Semantic Scholar)
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2005 article

Conduction band-edge d-states in high-k dielectrics due to Jahn-Teller term splittings

Lucovsky, G., Fulton, C. C., Zhang, Y., Luning, J., Edge, L., Whitten, J. L., … Afanase'v, VV. (2005, August 22). THIN SOLID FILMS, Vol. 486, pp. 129–135.

By: G. Lucovsky*, C. Fulton*, Y. Zhang*, J. Luning*, L. Edge*, J. Whitten*, R. Nemanich*, D. Schlom*, . Afanase'v*

author keywords: transition metal/rare earth oxides; complex oxides; band edge d-states; Jahn-Teller term splittings; localized band edge states; bulk trapping
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2005 journal article

Conduction band-edge states associated with the removal of d-state degeneracies by the Jahn-Teller effect

IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 5(1), 65–83.

By: G. Lucovsky n, C. Fulton n, Y. Zhang n, Y. Zou n, J. Luning*, L. Edge*, J. Whitten n, R. Nemanich n ...

author keywords: complex oxides; conduction band edge states; d-state degeneracy; high-k dielectrics; Jahn-Teller splittings; photoconductivity; spectroscopic ellipsometry; x-ray absorption spectroscopy
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2005 article

Defects and defect relaxation at internal interfaces between high-k transition metal and rare earth dielectrics and interfacial native oxides in metal oxide semiconductor (MOS) structures

Lucovsky, G., & Phillips, J. C. (2005, August 22). THIN SOLID FILMS, Vol. 486, pp. 200–204.

By: G. Lucovsky n & J. Phillips*

author keywords: interfacial defects and defect precursors; interfacial transition regions; internal dielectric interfaces; self-organization; bond constraint theory
Source: Web Of Science
Added: August 6, 2018

2005 article

Final state effects in VUV and soft X-ray absorption spectra of transition metal oxides and silicate alloys: comparisons between experiment and ab initio calculations

Lucovsky, G., Zhang, Y., Fulton, C. C., Zou, Y., Nemanich, R. J., Ade, H., & Whitten, J. L. (2005, June). JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, Vol. 144, pp. 917–919.

By: G. Lucovsky n, Y. Zhang n, C. Fulton n, Y. Zou n, R. Nemanich n, H. Ade n, J. Whitten n

author keywords: transition metal oxides; x-ray absorption spectra; intra- and inter-atomic transitions; spectroscopic ellipsometry
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2005 article

Intrinsic band edge traps in nano-crystalline HfO2 gate dielectrics

Lucovsky, G., Zhang, Y., Luning, J., Afanase'v, VV, Stesmans, A., Zollner, S., … Whitten, J. L. (2005, June). MICROELECTRONIC ENGINEERING, Vol. 80, pp. 110–113.

By: G. Lucovsky n, Y. Zhang n, J. Luning*, . Afanase'v*, A. Stesmans*, S. Zollner, D. Triyoso, B. Rogers*, J. Whitten n

author keywords: conduction band states; Jahn-Teller term splittings; x-ray absorption spectroscopy; spectroscopic ellipsometry; photoconductivity; band edge traps
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2005 journal article

Non-crystalline oxides and chalcogenides: A new paradigm based on ab initio quantum chemistry calculations for short range order and properties, and bond-constraint theory for network connectivity, network disruption and chemical phase separation

Journal of Optoelectronics and Advanced Materials, 7(4), 1691–1706.

By: G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

2005 journal article

Self-organization and the physics of glassy networks

PHILOSOPHICAL MAGAZINE, 85(32), 3823–3838.

By: P. Boolchand*, G. Lucovsky n, J. Phillips* & M. Thorpe*

Source: Web Of Science
Added: August 6, 2018

2005 article

Studies of the coupling of final d*-states in mixed Hf and Ti oxides (HfO2)(x)(TiOx)(1-x) and other complex oxides

Fulton, C. C., Lucovsky, G., Zhang, Y., Zou, Y., Nemanich, R. J., Ade, H., & Whitten, J. L. (2005, June). JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, Vol. 144, pp. 913–916.

By: C. Fulton n, G. Lucovsky n, Y. Zhang n, Y. Zou n, R. Nemanich n, H. Ade n, J. Whitten n

author keywords: complex oxides; x-ray absorption spectra; spectroscopic ellipsometry; d-State coupling; band gap engineering
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2004 article

A novel approach for determining the effective tunneling mass of electrons in HfO2 and other high-K alternative gate dielectrics for advanced CMOS devices

Hinkle, C. L., Fulton, C., Nemanich, R. J., & Lucovsky, G. (2004, April). MICROELECTRONIC ENGINEERING, Vol. 72, pp. 257–262.

By: C. Hinkle n, C. Fulton n, R. Nemanich n & G. Lucovsky n

author keywords: high-K dielectrics; direct tunneling; tunneling mass-conduction band offset energy product; stacked gate dielectrics
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

2004 article

A spectroscopic phase separation study distinguishing between chemical with different degrees of crystallinity in Zr(Hf) silicate alloys

Lucovsky, G., Rayner, G. B., Kang, D., Hinkle, C. L., & Hong, J. G. (2004, September 20). SURFACE SCIENCE, Vol. 566, pp. 772–776.

By: G. Lucovsky*, G. Rayner*, D. Kang*, C. Hinkle* & J. Hong*

author keywords: dielectric phenomena; crystallization; alloys; surface chemical reaction
Source: Web Of Science
Added: August 6, 2018

2004 article

A spectroscopic study distinguishing between chemical phase separation with different degrees of crystallinity in Hf(Zr) silicate alloys

Lucovsky, G., Rayner, G. B., Kang, D., Hinkle, C. L., & Hong, J. G. (2004, July 15). APPLIED SURFACE SCIENCE, Vol. 234, pp. 429–433.

By: G. Lucovsky*, G. Rayner*, D. Kang*, C. Hinkle* & J. Hong*

author keywords: high-k dielectrics; chemical phase separation; nano-crystalline phases
Source: Web Of Science
Added: August 6, 2018

2004 journal article

Ab initio theory calculations of the electronic structure of nc-AS(2)S(3) and GeS2: an intrinsic mechanism for reversible photo-darkening

Journal of Non-Crystalline Solids, 338-40(Jun 15 2004), 543–547.

By: T. Mowrer, G. Lucovsky, L. Sremaniak & J. Whitten

Sources: NC State University Libraries, NC State University Libraries
Added: August 6, 2018

2004 journal article

Band alignment between (100)Si and complex rare earth/transition metal oxides

APPLIED PHYSICS LETTERS, 85(24), 5917–5919.

By: . Afanas'ev*, A. Stesmans*, C. Zhao*, M. Caymax*, T. Heeg*, J. Schubert*, Y. Jia*, D. Schlom*, G. Lucovsky n

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

2004 article

Bond strain and defects at Si-SiO2 and internal dielectric interfaces in high-k gate stacks

Lucovsky, G., & Phillips, J. C. (2004, November 10). JOURNAL OF PHYSICS-CONDENSED MATTER, Vol. 16, pp. S5139–S5151.

By: G. Lucovsky n & J. Phillips*

Source: Web Of Science
Added: August 6, 2018

2004 journal article

Breakdown and reliability of p-MOS devices with stacked RPECVD oxide/nitride gate dielectric under constant voltage stress

MICROELECTRONICS RELIABILITY, 44(2), 207–212.

By: Y. Lee n, Y. Wu* & G. Lucovsky n

TL;DR: The breakdown characteristics and time-to-breakdown (tBD) are recorded from p+-poly/n-Si capacitors under constant voltage stress (CVS) at different temperatures, and it is projected that the maximum safe operating voltage is ∼1.9 V for 2.07 nm O/N gate dielectric. (via Semantic Scholar)
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

2004 article

Chemical phase separation in Zr silicate alloys: a spectroscopic study distinguishing between chemical phase separation with different degree of micro- and nano-crystallinity

Rayner, G. B., Kang, D., Hinkle, C. L., Hong, J. G., & Lucovsky, G. (2004, April). MICROELECTRONIC ENGINEERING, Vol. 72, pp. 304–309.

By: G. Rayner n, D. Kang n, C. Hinkle n, J. Hong n & G. Lucovsky n

author keywords: high-k dielectrics; chemical phase separation; infrared and X-ray spectroscopy
Source: Web Of Science
Added: August 6, 2018

2004 article

Chemical phase separation in Zr silicate alloys: a spectroscopic study distinguishing between chemical phase separation with different degrees of micro- and nano-crystallinity

Rayner, G. B., Kang, D., & Lucovsky, G. (2004, June 15). JOURNAL OF NON-CRYSTALLINE SOLIDS, Vol. 338, pp. 151–154.

By: G. Rayner n, D. Kang n & G. Lucovsky n

Source: Web Of Science
Added: August 6, 2018

2004 journal article

Electron trapping in metal-insulator-semiconductor structures on n-GaN with SiO2 and Si3N4 dielectrics

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 22(6), 2379–2383.

By: C. Bae n, C. Krug n & G. Lucovsky n

Source: Web Of Science
Added: August 6, 2018

2004 article

Enhanced tunneling in stacked gate dielectrics with ultra-thin HfO2 (ZrO2) layers sandwiched between thicker SiO2 layers

Hinkle, C. L., Fulton, C., Nemanich, R. J., & Lucovsky, G. (2004, September 20). SURFACE SCIENCE, Vol. 566, pp. 1185–1189.

By: C. Hinkle n, C. Fulton n, R. Nemanich n & G. Lucovsky n

author keywords: dielectric phenomena; tunneling; metal-oxide semiconductor (MOS) structures; surface electronic phenomena (work function, surface potential, surface states etc.)
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

2004 journal article

Enhanced tunneling in stacked gate dielectrics with ultra-thin HfO2 layers sandwiched between thicker SiO2 layers

Applied Surface Science, 234(37990), 240–245.

By: C. Hinkle, C. Fulton, R. Nemanich & G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

2004 journal article

Interface instabilities and electronic properties of ZrO2 on silicon (100)

JOURNAL OF APPLIED PHYSICS, 96(5), 2665–2673.

By: C. Fulton n, T. Cook n, G. Lucovsky n & R. Nemanich n

Source: Web Of Science
Added: August 6, 2018

2004 journal article

Interfacial strain-induced self-organization in semiconductor dielectric gate stacks. I. Strain relief at the Si-SiO2 interface

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 22(4), 2087–2096.

By: G. Lucovsky & J. Phillips

Source: NC State University Libraries
Added: August 6, 2018

2004 journal article

Interfacial strain-induced self-organization in semiconductor dielectric gate stacks. II. Strain-relief at internal dielectric interfaces between SiO2 and alternative gate dielectrics

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 22(4), 2097–2104.

By: G. Lucovsky, J. Maria & J. Phillips

Source: NC State University Libraries
Added: August 6, 2018

2004 article

Local atomic structure and infrared effective charges in tetrahedrally-bonded glasses from ab initio theory electronic structure calculations

Lucovsky, G., Mowrer, T., Sremaniak, L. S., & Whitten, J. L. (2004, June 15). JOURNAL OF NON-CRYSTALLINE SOLIDS, Vol. 338, pp. 155–158.

By: G. Lucovsky n, T. Mowrer n, L. Sremaniak n & J. Whitten n

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2004 journal article

Low-temperature preparation of GaN-SiO2 interfaces with low defect density. I. Two-step remote plasma-assisted oxidation-deposition process

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 22(6), 2402–2410.

By: C. Bae n & G. Lucovsky n

Source: Web Of Science
Added: August 6, 2018

2004 journal article

Low-temperature preparation of GaN-SiO2 interfaces with low defect density. II. Remote plasma-assisted oxidation of GaN and nitrogen incorporation\

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 22(6), 2411–2418.

By: C. Bae n & G. Lucovsky n

UN Sustainable Development Goal Categories
6. Clean Water and Sanitation (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

2004 patent

Methods of forming binary noncrystalline oxide analogs of silicon dioxide

Washington, DC: U.S. Patent and Trademark Office.

By: G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

2004 journal article

Microscopic bonding and macroscopic strain relaxations at Si-SiO2 interfaces

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 78(4), 453–459.

By: G. Lucovsky n & J. Phillips*

Source: Web Of Science
Added: August 6, 2018

2004 journal article

Nitrogen bonding, stability, and transport in AlON films on Si

APPLIED PHYSICS LETTERS, 84(24), 4992–4994.

By: G. Soares*, K. Bastos*, R. Pezzi*, L. Miotti*, C. Driemeier*, I. Baumvol*, C. Hinkle n, G. Lucovsky n

Source: Web Of Science
Added: August 6, 2018

2004 patent

Non-crystalline oxides for use in microelectronic, optical, and other applications

Washington, DC: U.S. Patent and Trademark Office.

By: G. Lucovsky & G. Parsons

Source: NC State University Libraries
Added: August 6, 2018

2004 journal article

Process-dependent band structure changes of transition-metal (Ti,Zr,Hf) oxides on Si (100)

APPLIED PHYSICS LETTERS, 84(4), 580–582.

By: C. Fulton n, G. Lucovsky n & R. Nemanich n

Source: Web Of Science
Added: August 6, 2018

2004 article

Reductions in interface defects, D-it, by post oxidation plasma-assisted nitridation of GaN-SiO2 interfaces in MOS devices

Bae, C., & Lucovsky, G. (2004, September 20). SURFACE SCIENCE, Vol. 566, pp. 356–360.

By: C. Bae n & G. Lucovsky n

author keywords: interface states; dielectric phenomena; plasma processing; surface defects; metal-oxide-semiconductor (MOS) structures
Source: Web Of Science
Added: August 6, 2018

2004 article

Reductions in interface defects, D-it, by post oxidation plasma-assisted nitridation of GaN-SiO2 interfaces in MOS devices

Bae, C., & Lucovsky, G. (2004, April). MICROELECTRONIC ENGINEERING, Vol. 72, pp. 236–240.

By: C. Bae n & G. Lucovsky n

author keywords: semiconductor-dielectric interfaces; remote plasma processing; interfacial defects
Source: Web Of Science
Added: August 6, 2018

2004 article

Reductions in interface defects, D-it, by post-oxidation plasma-assisted nitridation of GaN-SiO2 interfaces in MOS devices

Bae, C., & Lucovsky, G. (2004, July 15). APPLIED SURFACE SCIENCE, Vol. 234, pp. 475–479.

By: C. Bae n & G. Lucovsky n

author keywords: semiconductor-dielectric interfaces; remote plasma processing; interfacial defects
Source: Web Of Science
Added: August 6, 2018

2004 review

Remote plasma-assisted oxidation of SiC: a low temperature process for SiC-SiO2 interface formation that eliminates interfacial Si oxycarbide transition regions

[Review of ]. JOURNAL OF PHYSICS-CONDENSED MATTER, 16(17), S1815–S1837.

By: G. Lucovsky n & H. Niimi*

UN Sustainable Development Goal Categories
Source: Web Of Science
Added: August 6, 2018

2004 article

Separate and independent control of interfacial band alignments and dielectric constants in transition metal rare earth complex oxides

Lucovsky, G., Zhang, Y., Whitten, J. L., Schlom, D. G., & Freeouf, J. L. (2004, April). MICROELECTRONIC ENGINEERING, Vol. 72, pp. 288–293.

By: G. Lucovsky n, Y. Zhang n, J. Whitten n, D. Schlom* & J. Freeouf*

author keywords: high-k dielectrics; transition metal oxides; rare earth oxides; complex mixed oxides
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2004 article

Spectroscopic characterization of high k dielectrics: Applications to interface electronic structure and stability against chemical phase separation

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, Vol. 22, pp. 1301–1308.

By: C. Krug n & G. Lucovsky n

Source: Web Of Science
Added: August 6, 2018

2004 article

Spectroscopic studies of metal high-k dielectrics: transition metal oxides and silicates, and complex rare earth/transition metal oxides

Lucovsky, G., Hong, J. G., Fulton, C. C., Zou, Y., Nemanich, R. J., Ade, H., … Freeouf, J. L. (2004, August). PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, Vol. 241, pp. 2221–2235.

By: G. Lucovsky n, J. Hong n, C. Fulton n, Y. Zou n, R. Nemanich n, H. Ade n, D. Scholm*, J. Freeouf*

Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2004 article

Spectroscopic studies of the electrical structure of transition metal and rare earth complex oxides

Lucovsky, G., Zhang, Y., Whitten, J. L., Schlom, D. G., & Freeouf, J. L. (2004, March). PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, Vol. 21, pp. 712–716.

By: G. Lucovsky n, Y. Zhang n, J. Whitten n, D. Schlom* & J. Freeouf*

author keywords: high-K dielectrics; transition metal oxides; rare earth oxides; complex oxides
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2004 journal article

Suppression of subcutaneous oxidation during the deposition of amorphous lanthanum aluminate on silicon

APPLIED PHYSICS LETTERS, 84(23), 4629–4631.

By: L. Edge*, D. Schlom*, R. Brewer*, Y. Chabal*, . Williams*, S. Chambers*, C. Hinkle n, G. Lucovsky n ...

Source: Web Of Science
Added: August 6, 2018

2004 journal article

Surface passivation of n-GaN by nitrided-thin-Ga2O3/SiO2 and Si3N4 films

JOURNAL OF APPLIED PHYSICS, 96(5), 2674–2680.

By: C. Bae n, C. Krug n, G. Lucovsky n, A. Chakraborty* & U. Mishra*

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

2004 journal article

Thermal stability of plasma-nitrided aluminum oxide films on Si

APPLIED PHYSICS LETTERS, 84(1), 97–99.

By: K. Bastos*, R. Pezzi*, L. Miotti*, G. Soares*, C. Driemeier*, J. Morais*, I. Baumvol*, C. Hinkle n, G. Lucovsky n

Source: Web Of Science
Added: August 6, 2018

2004 journal article

Work-function difference between Al and n-GaN from Al-gated n-GaN/nitrided-thin-Ga2O3/SiO2 metal oxide semiconductor structures

Applied Physics Letters, 84(26), 5413–5415.

By: C. Bae n, C. Krug n, G. Lucovsky n, A. Chakraborty* & U. Mishra*

Source: NC State University Libraries
Added: August 6, 2018

2004 article

X-ray absorption spectra for transition metal high-kappa dielectrics: Final state differences for intra- and inter-atomic transitions

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol. 22, pp. 2132–2138.

By: G. Lucovsky n, J. Hong n, C. Fulton n, Y. Zou n, R. Nemanich n & H. Ade n

Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2003 journal article

A new approach for calculating the electronic structure and vibrational properties of non-crystalline solids: Effective charges for infrared-active normal mode vibrations in oxide and chalcogenide materials

Journal of Non-Crystalline Solids, 326(2003 Oct 1), 14-.

By: G. Lucovsky, L. Sremaniak, T. Mowrer & J. Whitten

Source: NC State University Libraries
Added: August 6, 2018

2003 journal article

American Vacuum Society leadership in electronic materials processing: Past, present, and future

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 21(5), S175–S181.

By: G. Lucovsky n & G. Rubloff*

Source: Web Of Science
Added: August 6, 2018

2003 article

Band offset energies in zirconium silicate Si alloys

Lucovsky, G., Rayner, B., Zhang, Y., Appel, G., & Whitten, J. (2003, June 30). APPLIED SURFACE SCIENCE, Vol. 216, pp. 215–222.

By: G. Lucovsky n, B. Rayner n, Y. Zhang n, G. Appel n & J. Whitten n

author keywords: plasma processing and deposition; Auger electron spectroscopy; X-ray photoelectron spectroscopy; X-ray absorption spectroscopy; zirconium silicate alloys; semiconductor-dielectric band offset energies
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2003 journal article

Band offset measurements of the GaN (0001)/HfO2 interface

Journal of Applied Physics, 94(11), 7155–7158.

Source: NC State University Libraries
Added: August 6, 2018

2003 journal article

Band offset measurements of the Si3N4/GaN (0001) interface

JOURNAL OF APPLIED PHYSICS, 94(6), 3949–3954.

By: T. Cook n, C. Fulton n, W. Mecouch n, R. Davis n, G. Lucovsky n & R. Nemanich n

Source: Web Of Science
Added: August 6, 2018

2003 patent

Binary non-crystalline oxide analogs of silicon dioxide for use in gate dielectrics

Washington, DC: U.S. Patent and Trademark Office.

By: G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

2003 article

Contributions to the infrared effective charges of oxides and chalcogenides from equilibrium charge and dynamic charge redistribution during normal mode motions

Sremaniak, L. S., Whitten, J. L., Menon, M., & Lucovsky, G. (2003, May 15). APPLIED SURFACE SCIENCE, Vol. 212, pp. 839–843.

By: L. Sremaniak n, J. Whitten n, M. Menon n & G. Lucovsky n

author keywords: non-crystalline oxides and chalcogenides; continuous random networks; infrared active vibrations; infrared effective charges; Ab initio quantum chemistry calculations; normal mode motions
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2003 article

Device-quality GaN-dielectric interfaces by 300 degrees C remote plasma processing

Bae, C., Rayner, G. B., & Lucovsky, G. (2003, June 30). APPLIED SURFACE SCIENCE, Vol. 216, pp. 119–123.

By: C. Bae n, G. Rayner n & G. Lucovsky n

author keywords: GaN-dielectric interfaces; surface leaning; subcutaneous oxidation; Ga2O3; SiO2; MOSd devices
Source: Web Of Science
Added: August 6, 2018

2003 article

Electronic structure of transition metal high-k dielectrics: interfacial band offset energies for microelectronic devices

Lucovsky, G., Raynor, G. B., Zhang, Y., Fulton, C. C., Nemanich, R. J., Appel, G., … Whitten, J. L. (2003, May 15). APPLIED SURFACE SCIENCE, Vol. 212, pp. 563–569.

By: G. Lucovsky*, G. Raynor, Y. Zhang*, C. Fulton*, R. Nemanich*, G. Appel*, H. Ade*, J. Whitten*

author keywords: ab initio quantum chemical calculations; plasma processing; Auger electron spectroscopy; X-ray photoelectron spectroscopy; X-ray absorption spectroscopy; zirconium silicate alloys; semiconductor-insulator interfaces
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2003 article

Electronic structure of transition metal/rare earth alternative high-K gate dielectrics: interfacial band alignments and intrinsic defects

MICROELECTRONICS RELIABILITY, Vol. 43, pp. 1417–1426.

By: G. Lucovsky n

Source: Web Of Science
Added: August 6, 2018

2003 article

Low temperature semiconductor surface passivation for nanoelectronic device applications

Bae, C., & Lucovsky, G. (2003, June 10). SURFACE SCIENCE, Vol. 532, pp. 759–763.

By: C. Bae & G. Lucovsky*

author keywords: plasma processing; Auger electron spectroscopy; semiconductor-insulator interfaces; interface states
Source: Web Of Science
Added: August 6, 2018

2003 journal article

Measurement of the band offsets of SiO2 on clean n- and p-type GaN(0001)

JOURNAL OF APPLIED PHYSICS, 93(7), 3995–4004.

By: T. Cook n, C. Fulton n, W. Mecouch n, K. Tracy n, R. Davis n, E. Hurt n, G. Lucovsky n, R. Nemanich n

Source: Web Of Science
Added: August 6, 2018

2003 article

Oxide formation and passivation for micro- and nano-electronic devices

Bae, C., & Lucovsky, G. (2003, May 15). APPLIED SURFACE SCIENCE, Vol. 212, pp. 644–648.

By: C. Bae n & G. Lucovsky n

author keywords: plasma processing; Auger electron spectroscopy; semiconductor-insulator interfaces; interface states
Source: Web Of Science
Added: August 6, 2018

2003 article

Remote plasma-assisted nitridation (RPN): applications to Zr and Hf silicate alloys and Al2O3

Hinkle, C., & Lucovsky, G. (2003, June 30). APPLIED SURFACE SCIENCE, Vol. 216, pp. 124–132.

By: C. Hinkle n & G. Lucovsky n

author keywords: remote plasma nitridation; Auger electron spectroscopy; X-ray photoelectron spectroscopy; X-ray absorption spectroscopy; zirconium and hafnium silicate alloys; Al2O3
UN Sustainable Development Goal Categories
6. Clean Water and Sanitation (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

2003 journal article

Soft x-ray photoelectron spectroscopy of (HfO2)(x)(SiO2)(1-x) high-k gate-dielectric structures

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 21(4), 1777–1782.

By: M. Ulrich, J. Hong, J. Rowe, G. Lucovsky, A. Chan & T. Madey

Source: NC State University Libraries
Added: August 6, 2018

2003 journal article

Spectroscopic study of chemical phase separation in zirconium silicate alloys

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 21(4), 1783–1791.

By: G. Rayner, D. Kang & G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

2003 journal article

Structural dependence of breakdown characteristics and electrical degradation in ultrathin RPECVD oxide/nitride gate dielectrics under constant voltage stress

SOLID-STATE ELECTRONICS, 47(1), 71–76.

By: Y. Lee n, Y. Wu*, C. Bae n, J. Hong n & G. Lucovsky n

author keywords: dielectric degradation; soft breakdown; RPECVD oxide/nitride dielectric; stress-induced leakage current; constant voltage stress; hard breakdown
Source: Web Of Science
Added: August 6, 2018

2002 article

A molecular orbital model for the electronic structure of transition metal atoms in silcate and aluminate alloys

Lucovsky, G., Whitten, J. L., & Zhang, Y. (2002, May 8). APPLIED SURFACE SCIENCE, Vol. 190, pp. 48–55.

By: G. Lucovsky n, J. Whitten n & Y. Zhang n

author keywords: morphological classification of non-crystalline dielectrics; transition metal silicates and aluminates; molecular orbital calculations; electronic structure; band offset energies
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2002 article

A molecular orbital model for the electronic structure of transition metal atoms in silicate and aluminate alloys

Lucovsky, G., Whitten, J. L., & Zhang, Y. (2002, November). SOLID-STATE ELECTRONICS, Vol. 46, pp. 1687–1697.

By: G. Lucovsky n, J. Whitten n & Y. Zhang n

author keywords: transition metal oxides; silicates and aluminates; high-k dielectrics; electronic structure; local molecular orbital model
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2002 article

Amorphous morphology, thermal stability and electronic structure of non-crystalline transition-metal elemental and binary oxides, and chalcogenides

Lucovsky, G. (2002, April 1). JOURNAL OF NON-CRYSTALLINE SOLIDS, Vol. 299, pp. 231–237.

By: G. Lucovsky n

Source: Web Of Science
Added: August 6, 2018

2002 journal article

Characterization of charge-carrier dynamics in thin oxide layers on silicon by second harmonic generation

Physical Review. B, Condensed Matter and Materials Physics, 65(19), 193103–193101.

By: Y. Glinka, W. Wang, S. Singh, Z. Marka, S. Rashkeev, Y. Shirokaya, R. Albridge, S. Pantelides, N. Tolk, G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

2002 article

Correlations between electronic structure of transition metal atoms and performance of high-k gate dielectrics in advanced Si devices

Lucovsky, G. (2002, May 1). JOURNAL OF NON-CRYSTALLINE SOLIDS, Vol. 303, pp. 40–49.

By: G. Lucovsky n

Source: Web Of Science
Added: August 6, 2018

2002 journal article

Dielectric functions and optical bandgaps of high-K dielectrics for metal-oxide-semiconductor field-effect transistors by far ultraviolet spectroscopic ellipsometry

JOURNAL OF APPLIED PHYSICS, 91(7), 4500–4505.

By: S. Lim*, S. Kriventsov*, T. Jackson*, J. Haeni*, D. Schlom*, A. Balbashov*, R. Uecker*, P. Reiche*, J. Freeouf*, G. Lucovsky n

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

2002 article

Electron trapping in non-crystalline Ta- and Hf-aluminates for gate dielectric applications in aggressively scaled silicon devices

Johnson, R. S., Hong, J. G., Hinkle, C., & Lucovsky, G. (2002, November). SOLID-STATE ELECTRONICS, Vol. 46, pp. 1799–1805.

By: R. Johnson*, J. Hong*, C. Hinkle* & G. Lucovsky*

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

2002 journal article

Electron trapping in noncrystalline remote plasma deposited Hf- aluminate alloys for gate dielectric applications

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 20(3), 1126–1131.

By: R. Johnson, J. Hong, C. Hinkle & G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

2002 article

Electronic states at the interface of Ti-Si oxide on Si(100)

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol. 20, pp. 1726–1731.

By: C. Fulton n, G. Lucovsky n & R. Nemanich n

Source: Web Of Science
Added: August 6, 2018

2002 journal article

Electronic structure of SiO2: Charge redistribution contributions to the dynamic dipoles/effective charges of the infrared active normal modes

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 20(4), 1710–1719.

By: J. Whitten, Y. Zhang, M. Menon & G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

2002 journal article

Electronic structure of high-k transition metal oxides and their silicate and aluminate alloys

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 20(4), 1739–1747.

By: G. Lucovsky, Y. Zhang, G. Rayner, G. Appel, H. Ade & J. Whitten

Source: NC State University Libraries
Added: August 6, 2018

2002 article

Fixed charge and interface traps at heterovalent interfaces between Si(100) and non-crystalline Al2O3-Ta2O5 alloys

Johnson, R. S., Lucovsky, G., & Hong, J. G. (2002, May 8). APPLIED SURFACE SCIENCE, Vol. 190, pp. 43–47.

By: R. Johnson n, G. Lucovsky n & J. Hong n

author keywords: heterovalent interface; interface traps; fixed charge; trapped limited transport; Poole-Frenkel transport
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

2002 journal article

Interface electronic structure of Ta2O5-Al2O3 alloys for Si- field-effect transistor gate dielectric applications

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 20(4), 1732–1738.

By: M. Ulrich, R. Johnson, J. Hong, J. Rowe, G. Lucovsky, J. Quinton, T. Madey

Source: NC State University Libraries
Added: August 6, 2018

2002 journal article

Issues in high-kappa gate stack interfaces

MRS BULLETIN, 27(3), 212–216.

By: V. Misra*, G. Lucovsky* & G. Parsons*

Contributors: V. Misra*, G. Lucovsky* & G. Parsons*

author keywords: gate stacks; high-dielectric-constant materials; high-kappa dielectrics; interface reactions; metal gates
Sources: Web Of Science, NC State University Libraries, ORCID
Added: August 6, 2018

2002 article

Long-term reliability degradation of ultrathin dielectric films due to heavy-ion irradiation

Choi, B. K., Fleetwood, D. M., Schrimpf, R. D., Massengill, L. W., Galloway, K. F., Shaneyfelt, M. R., … Lucovsky, G. (2002, December). IEEE TRANSACTIONS ON NUCLEAR SCIENCE, Vol. 49, pp. 3045–3050.

By: B. Choi*, D. Fleetwood*, R. Schrimpf*, L. Massengill*, K. Galloway*, M. Shaneyfelt*, T. Meisenheimer, P. Dodd* ...

author keywords: heavy-ion irradiation; radiation effect; single-event effect; ultra-thin gate dielectric films
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

2002 journal article

Low-temperature Ar/N-2 remote plasma nitridation of SiO2 thin films

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 20(6), 1989–1996.

By: A. Khandelwal n, H. Niimi n, G. Lucovsky n & H. Lamb n

UN Sustainable Development Goal Categories
6. Clean Water and Sanitation (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

2002 article

Nonlinear composition dependence of x-ray photoelectron spectroscopy and Auger electron spectroscopy features in plasma-deposited zirconium silicate alloy thin films

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol. 20, pp. 1748–1758.

By: G. Rayner n, D. Kang n, Y. Zhang n & G. Lucovsky n

Source: Web Of Science
Added: August 6, 2018

2002 article

Origins of silicon solar cell passivation by SiNx : H anneal

Boehme, C., & Lucovsky, G. (2002, April 1). JOURNAL OF NON-CRYSTALLINE SOLIDS, Vol. 299, pp. 1157–1161.

By: C. Boehme* & G. Lucovsky n

UN Sustainable Development Goal Categories
Source: Web Of Science
Added: August 6, 2018

2002 journal article

Reaction pathways in remote plasma nitridation of ultrathin SiO2 films

JOURNAL OF APPLIED PHYSICS, 91(1), 48–55.

By: H. Niimi n, A. Khandelwal n, H. Lamb n & G. Lucovsky n

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

2002 journal article

Reliability degradation of ultra-thin oxynitride and Al2O3 gate dielectric films owing to heavy-ion irradiation

Electronics Letters, 38(4), 157–158.

By: B. Choi*, D. Fleetwood*, L. Massengill*, R. Schrimpf*, K. Galloway*, M. Shaneyfelt*, T. Meisenheimer*, P. Dodd* ...

Source: NC State University Libraries
Added: August 6, 2018

2002 article

Simplified bond-hyperpolarizability model of second harmonic generation: Application to Si-dielectric interfaces

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol. 20, pp. 1699–1705.

By: J. Wang n, G. Powell n, R. Johnson n, G. Lucovsky n & D. Aspnes n

UN Sustainable Development Goal Categories
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2002 article

Total-dose radiation response of hafnium-silicate capacitors

Felix, J. A., Fleetwood, D. M., Schrimpf, R. D., Hong, J. G., Lucovsky, G., Schwank, JR, & Shaneyfelt, M. R. (2002, December). IEEE TRANSACTIONS ON NUCLEAR SCIENCE, Vol. 49, pp. 3191–3196.

By: J. Felix*, D. Fleetwood*, R. Schrimpf*, J. Hong n, G. Lucovsky n, . Schwank*, M. Shaneyfelt*

author keywords: alternative dielectric film; burn-in effects; MOS capacitor; oxide trapped; radiation effects
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

2002 journal article

Vertically scaled MOSFET gate stacks and junctions: How far are we likely to go?

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 46(2-3), 299–315.

By: C. Osburn n, I. Kim n, S. Han n, I. De*, K. Yee, S. Gannavaram*, S. Lee*, C. Lee* ...

TL;DR: The vertical scaling requirements for gate stacks and for shallow extension junctions are reviewed and it seems likely that an EOT of 0.4-0.5 nm would represent the physical limit of dielectric scaling, but even then with a very high leakage. (via Semantic Scholar)
Source: Web Of Science
Added: August 6, 2018

2002 journal article

Voltage- and temperature-dependent gate capacitance and current model: Application to ZrO2 n-channel MOS capacitor

IEEE TRANSACTIONS ON ELECTRON DEVICES, 49(11), 1969–1978.

By: Y. Fan*, R. Nieh*, J. Lee*, G. Lucovsky n, G. Brown, L. Register*, S. Banerjee*

author keywords: high-K gate dielectric; leakage currents; MIS devices; MOSFETs; semiconductor device modeling; tunneling
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

2001 article

A molecular orbital model for the electronic structure of transition metal atoms in silicate and aluminate alloys

Lucovsky, G., Whitten, J. L., & Zhang, Y. (2001, November). MICROELECTRONIC ENGINEERING, Vol. 59, pp. 329–334.

By: G. Lucovsky n, J. Whitten n & Y. Zhang n

author keywords: transition metal silicates and aluminates; molecular orbital calculations; electronic structure; bandgaps; band offset energies
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2001 journal article

Characteristics of metalorganic remote plasma chemical vapor deposited Al2O3 gate stacks on SiC metal-oxide-semiconductor devices

APPLIED PHYSICS LETTERS, 79(7), 973–975.

By: H. Lazar n, V. Misra n, R. Johnson n & G. Lucovsky n

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (Web of Science; OpenAlex)
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2001 article

Chemical and physical limits on the performance of metal silicate high-k gate dielectrics

Lucovsky, G., Rayner, G. B., & Johnson, R. S. (2001, July). MICROELECTRONICS RELIABILITY, Vol. 41, pp. 937–945.

By: G. Lucovsky n, G. Rayner n & R. Johnson n

TL;DR: The paper includes results for other high- k oxides, Al 2 O 3 and Ta 2 O 5, and their alloys that relate to the issues addressed in this paper, and in particular help to put the results on the silicate alloys into a better perspective. (via Semantic Scholar)
Source: Web Of Science
Added: August 6, 2018

2001 journal article

Dissociation reactions of hydrogen in remote plasma-enhanced chemical-vapor-deposition silicon nitride

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 19(5), 2622–2628.

By: C. Boehme n & G. Lucovsky n

UN Sustainable Development Goal Categories
6. Clean Water and Sanitation (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

2001 journal article

Electron traps at interfaces between Si(100) and noncrystalline Al2O3, Ta2O5, and (Ta2O5)(x)(Al2O3)(1-x) alloys

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 19(4), 1606–1610.

By: R. Johnson, J. Hong & G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

2001 journal article

Electronic structure of noncrystalline transition metal silicate and aluminate alloys

APPLIED PHYSICS LETTERS, 79(12), 1775–1777.

By: G. Lucovsky n, G. Rayner n, D. Kang n, G. Appel n, R. Johnson n, Y. Zhang n, D. Sayers n, H. Ade n, J. Whitten n

Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2001 journal article

Electronic structure, amorphous morphology and thermal stability of transition metal oxide and chalcogenide alloys

Journal of Optoelectronics and Advanced Materials, 3(2), 155–166.

By: G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

2001 article

Fixed charge and interface traps at heterovalent interfaces between Si(100) and non-crystalline Al2O3-Ta2O5 alloys

Johnson, R. S., Lucovsky, G., & Hong, J. G. (2001, November). MICROELECTRONIC ENGINEERING, Vol. 59, pp. 385–391.

By: R. Johnson n, G. Lucovsky n & J. Hong n

author keywords: heterovalent interface; interface traps; fixed charge; trapped limited transport
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

2001 article

Heavy-ion-induced breakdown in ultra-thin gate oxides and high-k dielectrics

Massengill, L. W., Choi, B. K., Fleetwood, D. M., Schrimpf, R. D., Galloway, K. F., Shaneyfelt, M. R., … Lucovsky, G. (2001, December). IEEE TRANSACTIONS ON NUCLEAR SCIENCE, Vol. 48, pp. 1904–1912.

By: L. Massengill*, B. Choi*, D. Fleetwood*, R. Schrimpf*, K. Galloway*, M. Shaneyfelt*, T. Meisenheimer*, P. Dodd* ...

author keywords: dielectric breakdown; dielectric reliability; scaling; single-event radiation effects
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

2001 article

Physical and electrical properties of noncrystalline Al2O3 prepared by remote plasma enhanced chemical vapor deposition

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, Vol. 19, pp. 1353–1360.

By: R. Johnson n, G. Lucovsky n & I. Baumvol*

Source: Web Of Science
Added: August 6, 2018

2001 article

Transition from thermally grown gate dielectrics to deposited gate dielectrics for advanced silicon devices: A classification scheme based on bond ionicity

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, Vol. 19, pp. 1553–1561.

By: G. Lucovsky n

Source: Web Of Science
Added: August 6, 2018

2000 journal article

1.6 nm oxide equivalent gate dielectrics using nitride/oxide (N/O) composites prepared by RPECVD/oxidation process

IEEE ELECTRON DEVICE LETTERS, 21(3), 116–118.

By: Y. Wu*, Y. Lee n & G. Lucovsky n

author keywords: gate dielectric; MOSFET; nitride; oxide; tunneling current
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

2000 journal article

Application of constraint theory to Si-dielectric interfaces in a-Si: H and poly-Si thin film transistors (TFTs)

Journal of Non-Crystalline Solids, 266(2000 May), 1335–1339.

By: G. Lucovsky & J. Phillips

Source: NC State University Libraries
Added: August 6, 2018

2000 article

Barrier layer model determined by XPS data for tunneling current reductions at monolayer nitrided Si-SiO(2) interfaces

Niimi, H., Yang, H. Y., Lucovsky, G., Keister, J. W., & Rowe, J. E. (2000, October 9). APPLIED SURFACE SCIENCE, Vol. 166, pp. 485–491.

By: H. Niimi n, H. Yang n, G. Lucovsky n, J. Keister n & J. Rowe n

author keywords: gate dielectrics; direct tunneling; interfacial suboxide bonding; nitrided interfaces; Fowler-Nordheim tunneling
Source: Web Of Science
Added: August 6, 2018

2000 article

Charge redistribution at GaN-Ga2O3 interfaces: a microscopic mechanism for low defect density interfaces in remote-plasma-processed MOS devices prepared on polar GaN faces

Therrien, R., Lucovsky, G., & Davis, R. (2000, October 9). APPLIED SURFACE SCIENCE, Vol. 166, pp. 513–519.

By: R. Therrien n, G. Lucovsky n & R. Davis n

author keywords: GaN-dielectric interfaces; remote-plasma processing; interfacial charge redistribution
Source: Web Of Science
Added: August 6, 2018

2000 journal article

Depth-resolved detection and process dependence of traps at ultrathin plasma-oxidized and deposited SiO2/Si interfaces

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 18(3), 1737–1741.

By: L. Brillson, A. Young, B. White, J. Schafer, H. Niimi, Y. Lee, G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

2000 journal article

Formation of nano-crystalline Si by thermal annealing of SiOx, SiCx and SiOyCx amorphous alloys: model systems for advanced device processing

Journal of Non-Crystalline Solids, 266(2000 May), 1009–1014.

By: D. Wolfe & G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

2000 journal article

H loss mechanism during anneal of silicon nitride: Chemical dissociation

JOURNAL OF APPLIED PHYSICS, 88(10), 6055–6059.

By: C. Boehme n & G. Lucovsky n

Source: Web Of Science
Added: August 6, 2018

2000 article

Independent interface and bulk film contributions to reduction of tunneling currents in stacked oxide/nitride gate dielectrics with monolayer nitrided interfaces

Lucovsky, G., Niimi, H., Wu, Y., & Yang, H. (2000, June). APPLIED SURFACE SCIENCE, Vol. 159, pp. 50–61.

By: G. Lucovsky n, H. Niimi n, Y. Wu n & H. Yang n

author keywords: dielectric-semiconductor interfaces; nitrided Si interfaces; tunneling current; NMOS and PMOS FETs; stacked gate dielectrics; high-k gate dielectrics
Source: Web Of Science
Added: August 6, 2018

2000 journal article

Intrinsic limitations on device performance and reliability from bond-constraint induced transition regions at interfaces of stacked dielectrics

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 18(3), 1742–1748.

By: G. Lucovsky, H. Yang, H. Niimi, J. Keister, J. Rowe, M. Thorpe, J. Phillips

Source: NC State University Libraries
Added: August 6, 2018

2000 journal article

Intrinsic limitations on ultimate device performance and reliability at (i) semiconductor-dielectric interfaces and (ii) internal interfaces in stacked dielectrics

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 18(4), 2179–2186.

By: G. Lucovsky, H. Yang, H. Niimi, M. Thorpe & J. Phillips

Source: NC State University Libraries
Added: August 6, 2018

2000 article

Limitations for aggressively scaled CMOS Si devices due to bond coordination constraints and reduced band offset energies at Si-high-k dielectric interfaces

Lucovsky, G., & Phillips, J. C. (2000, October 9). APPLIED SURFACE SCIENCE, Vol. 166, pp. 497–503.

By: G. Lucovsky n & J. Phillips

author keywords: gate dielectrics; alternative high-k dielectrics; interface bonding; interface constraints; band offset energies
Source: Web Of Science
Added: August 6, 2018

2000 article

Low energy electron-excited nanoscale luminescence: A tool to detect trap activation by ionizing radiation

White, B. D., Brillson, L. J., Lee, S. C., Fleetwood, D. M., Schrimpf, R. D., Pantelides, S. T., … Lucovsky, G. (2000, December). IEEE TRANSACTIONS ON NUCLEAR SCIENCE, Vol. 47, pp. 2276–2280.

By: B. White*, L. Brillson*, S. Lee*, D. Fleetwood*, R. Schrimpf*, S. Pantelides*, Y. Lee n, G. Lucovsky n

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

2000 journal article

Microscopic model for enhanced dielectric constants in low concentration SiO2-rich noncrystalline Zr and Hf silicate alloys

APPLIED PHYSICS LETTERS, 77(18), 2912–2914.

By: G. Lucovsky n & G. Rayner n

Source: Web Of Science
Added: August 6, 2018

2000 article

New approach for the fabrication of device-quality Ge/GeO2/SiO2 interfaces using low temperature remote plasma processing

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, Vol. 18, pp. 1230–1233.

By: R. Johnson n, H. Niimi n & G. Lucovsky n

Source: Web Of Science
Added: August 6, 2018

2000 article

Plasma processed ultra-thin SiO2 interfaces far advanced silicon NMOS and PMOS devices: applications to Si-oxide Si oxynitride, Si-oxide Si nitride and Si-oxide transition metal oxide stacked gate dielectrics

Lucovsky, G., Yang, H. Y., Wu, Y., & Niimi, H. (2000, October 17). THIN SOLID FILMS, Vol. 374, pp. 217–227.

By: G. Lucovsky n, H. Yang n, Y. Wu n & H. Niimi n

author keywords: stacked gate dielectrics; semiconductor dielectric interfaces; silicon oxynitride alloys; transition metal oxides; CMOS devices; plasma-assisted oxidation; nitridation and deposition
Source: Web Of Science
Added: August 6, 2018

2000 article

Separate and independent reductions in direct tunneling in oxide/nitride stacks with monolayer interface nitridation associated with the (i) interface nitridation and (ii) increased physical thickness

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, Vol. 18, pp. 1163–1168.

By: G. Lucovsky n, Y. Wu n, H. Niimi n, H. Yang n, J. Keister n & J. Rowe n

Source: Web Of Science
Added: August 6, 2018

2000 journal article

The effects of interfacial sub-oxide transition regions and monolayer level nitridation on tunneling currents in silicon devices

IEEE ELECTRON DEVICE LETTERS, 21(2), 76–78.

By: H. Yang n, H. Niimi, J. Keister n & G. Lucovsky n

Source: Web Of Science
Added: August 6, 2018

2000 journal article

The performance and reliability of PMOSFET's with ultrathin silicon nitride/oxide stacked gate dielectrics with nitrided Si-SiO2 interfaces prepared by remote plasma enhanced CVD and post-deposition rapid thermal annealing

IEEE TRANSACTIONS ON ELECTRON DEVICES, 47(7), 1361–1369.

By: Y. Wu n, G. Lucovsky n & Y. Lee n

author keywords: boron penetration; gate dielectrics; nitride; N/O; oxide
Source: Web Of Science
Added: August 6, 2018

2000 journal article

Time-dependent dielectric wearout technique with temperature effect for reliability test of ultrathin (< 2.0 nm) single layer and dual layer gate oxides

Time-dependent dielectric wearout technique with temperature effect for reliability test of ultrathin (< 2.0 nm) single layer and dual layer gate oxides. MICROELECTRONICS RELIABILITY, 40(12), 1987–1995.

By: Y. Wu*, Q. Xiang*, J. Yang*, G. Lucovsky n & M. Lin*

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

1999 journal article

Band offsets for ultrathin SiO2 and Si3N4 films on Si(111) and Si(100) from photoemission spectroscopy

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 17(4), 1831–1835.

By: J. Keister, J. Rowe, J. Kolodziej, H. Niimi, T. Madey & G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Bonding constraint-induced defect formation at Si-dielectric interfaces and internal interfaces in dual-layer gate dielectrics

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 17(4), 1806–1812.

By: G. Lucovsky, Y. Wu, H. Niimi, V. Misra & J. Phillips

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Bonding constraints and defect formation at interfaces between crystalline silicon and advanced single layer and composite gate dielectrics

APPLIED PHYSICS LETTERS, 74(14), 2005–2007.

By: G. Lucovsky n, Y. Wu n, H. Niimi n, V. Misra n & J. Phillips

Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

1999 article

Cathodoluminescence spectroscopy of nitrided SiO2-Si interfaces

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, Vol. 17, pp. 1258–1262.

By: A. Young*, R. Bandhu*, J. Schafer*, H. Niimi n & G. Lucovsky n

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

1999 article

Charge redistribution at GaN-Ga2O3 interfaces: A microscopic mechanism for low defect density interfaces in remote plasma processed MOS devices prepared on polar GaN faces

Therrien, R., Niimi, H., Gehrke, T., Lucovsky, G., & Davis, R. (1999, September). MICROELECTRONIC ENGINEERING, Vol. 48, pp. 303–306.

By: R. Therrien n, H. Niimi n, T. Gehrke n, G. Lucovsky n & R. Davis n

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

1999 article

Charge redistribution at GaN-Ga2O3 interfaces: A microscopic mechanism for low defect density interfaces in remote plasma processed MOS devices prepared on polar GaN faces

Therrien, R., Lucovsky, G., & Davis, R. F. (1999, November 16). PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, Vol. 176, pp. 793–796.

By: R. Therrien*, G. Lucovsky n & R. Davis n

Source: Web Of Science
Added: August 6, 2018

1999 journal article

Improvement of gate dielectric reliability for p plus poly MOS devices using remote PECVD top nitride deposition ultra-thin (2.4-6 nm) gate oxides

MICROELECTRONICS RELIABILITY, 39(3), 365–372.

By: Y. Wu & G. Lucovsky*

Source: Web Of Science
Added: August 6, 2018

1999 journal article

Interfacial properties of ultrathin pure silicon nitride formed by remote plasma enhanced chemical vapor deposition

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 17(4), 1836–1839.

By: V. Misra, H. Lazar, Z. Wang, Y. Wu, H. Niimi, G. Lucovsky, J. Wortman, J. Hauser

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Monolayer-level controlled incorporation of nitrogen at Si-SiO(2) interfaces using remote plasma processing

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 17(6), 3185–3196.

By: H. Niimi n & G. Lucovsky n

Source: Web Of Science
Added: August 6, 2018

1999 journal article

Monolayer-level controlled incorporation of nitrogen in ultrathin gate dielectrics using remote plasma processing: Formation of stacked 'N-O-N' gate dielectrics

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 17(6), 2610–2621.

By: H. Niimi & G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

1999 article

Reaction/annealing pathways for forming ultrathin silicon nitride films for composite oxide-nitride gate dielectrics with nitrided crystalline silicon-dielectric interfaces for application in advanced complementary metal-oxide-semiconductor devices

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, Vol. 17, pp. 1340–1351.

By: G. Lucovsky n

Source: Web Of Science
Added: August 6, 2018

1999 article

Silicon oxide/silicon nitride dual-layer films: a stacked gate dielectric for the 21st century

Lucovsky, G. (1999, September 1). JOURNAL OF NON-CRYSTALLINE SOLIDS, Vol. 254, pp. 26–37.

By: G. Lucovsky n

Source: Web Of Science
Added: August 6, 2018

1999 article

Stability of Si-O-F low-K dielectrics: attack by water molecules as function of near-neighbor Si-F bonding arrangements

Yang, H., & Lucovsky, G. (1999, September 1). JOURNAL OF NON-CRYSTALLINE SOLIDS, Vol. 254, pp. 128–133.

By: H. Yang & G. Lucovsky*

UN Sustainable Development Goal Categories
6. Clean Water and Sanitation (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

1999 article

Structure of ultrathin SiO2/Si(111) interfaces studied by photoelectron spectroscopy

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, Vol. 17, pp. 1250–1257.

By: J. Keister n, J. Rowe n, J. Kolodziej*, H. Niimi n, H. Tao*, T. Madey*, G. Lucovsky n

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

1999 journal article

Suppression of boron transport out of p(+) polycrystalline silicon at polycrystalline silicon dielectric interfaces

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 17(4), 1813–1822.

By: Y. Wu, H. Niimi, H. Yang, G. Lucovsky & R. Fair

Source: NC State University Libraries
Added: August 6, 2018

1999 article

The effects of chemical bonding and band offset constraints at Si-dielectric interfaces on the integration of alternative high-K dielectrics into aggressively-scaled CMOS Si devices

Lucovsky, G., & Phillips, J. C. (1999, September). MICROELECTRONIC ENGINEERING, Vol. 48, pp. 291–294.

By: G. Lucovsky n & J. Phillips

Source: Web Of Science
Added: August 6, 2018

1999 article

The effects of interfacial suboxide transition regions on direct tunneling in oxide and stacked oxide-nitride gate dielectrics

Yang, H., Niimi, H., Wu, Y., Lucovsky, G., Keister, J. W., & Rowe, J. E. (1999, September). MICROELECTRONIC ENGINEERING, Vol. 48, pp. 307–310.

By: H. Yang n, H. Niimi n, Y. Wu n, G. Lucovsky n, J. Keister n & J. Rowe n

Source: Web Of Science
Added: August 6, 2018

1999 article

Thermochemical stability of silicon-oxygen-carbon alloy thin films: A model system for chemical and structural relaxation at SiC-SiO2 interfaces

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, Vol. 17, pp. 2170–2177.

By: D. Wolfe n, B. Hinds n, F. Wang n, G. Lucovsky n, B. Ward n, M. Xu n, R. Nemanich n, D. Maher n

Source: Web Of Science
Added: August 6, 2018

1999 journal article

Time dependent dielectric wearout (TDDW) technique for reliability of ultrathin gate oxides

IEEE ELECTRON DEVICE LETTERS, 20(6), 262–264.

By: Y. Wu*, Q. Xiang*, D. Bang*, G. Lucovsky n & M. Lin*

author keywords: reliability TDDB; TDDW; ultrathin oxide
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

1999 journal article

Ultrathin nitrided gate dielectrics: Plasma processing, chemical characterization, performance, and reliability

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 43(3), 301–326.

By: G. Lucovsky n

TL;DR: The results presented in this review demonstrate that N atoms can be selectively and independently incorporated into different parts of the gate dielectric by low-temperature remote-plasma-assisted processing and when combined with low-thermal-budget rapid thermal annealing, this yields ultrathin Gate dielectrics with performance and reliability which generally exceeds that of single-layer thermally grown oxides. (via Semantic Scholar)
Source: Web Of Science
Added: August 6, 2018

1998 article

A unified chemical bonding model for defect generation in a-SiH: Photo-induced defects in photovoltaic devices and current-induced defects in TFTs

Yang, H., & Lucovsky, G. (1998, March). JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, Vol. 37, pp. 1082–1090.

By: H. Yang n & G. Lucovsky*

author keywords: photo-induced defect generation; current-induced defect generation; PV devices; thin film transistors; reaction pathways; ab initio calculations; displacive hydrogen atom motion; metastable defects; H-bonds
Source: Web Of Science
Added: August 6, 2018

1998 journal article

Atomic structure and thermal stability of silicon suboxides in bulk thin films and in transition regions at Si-SiO2 interfaces

Journal of Non-Crystalline Solids, 230 (part A)(1998 May), 1–14.

By: G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

Cathodoluminescence measurements of suboxide band-tail and Si dangling bond states at ultrathin Si-SiO2 interfaces

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 16(4), 2177–2181.

By: A. Young, J. Schafer, G. Jessen, R. Bandhu, L. Brillson, G. Lucovsky, H. Niimi

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

Controlled nitrogen incorporation at Si-SiO2 interfaces by remote plasma-assisted processing

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 37(2), 709–714.

By: K. Koh n, H. Niimi n, G. Lucovsky n & M. Green

author keywords: low-temperature processing; plasma-assisted oxidation and nitridation; rapid thermal annealing; Si-SiO2 interfaces; Auger electron spectroscopy; optical second harmonic generation; chemical reaction pathways
UN Sustainable Development Goal Categories
6. Clean Water and Sanitation (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

1998 journal article

Coupled electron-hole dynamics at the Si/SiO2 interface

PHYSICAL REVIEW LETTERS, 81(19), 4224–4227.

Source: Web Of Science
Added: August 6, 2018

1998 journal article

Depth-dependent spectroscopic defect characterization of the interface between plasma-deposited SiO(2) and silicon

APPLIED PHYSICS LETTERS, 73(6), 791–793.

By: J. Schafer*, A. Young*, L. Brillson*, H. Niimi n & G. Lucovsky n

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

1998 article

Differences between silicon oxycarbide regions at SiC-SiO(2) prepared by plasma-assisted oxidation and thermal oxidations

Lucovsky, G., Niimi, H., Golz, A., & Kurz, H. (1998, January). APPLIED SURFACE SCIENCE, Vol. 123, pp. 435–439.

By: G. Lucovsky n, H. Niimi n, A. Golz* & H. Kurz*

UN Sustainable Development Goal Categories
Source: Web Of Science
Added: August 6, 2018

1998 journal article

Heterointerface dipoles: Applications to (a) Si-SiO2, (b) nitrided Si-N-SiO2, and (c) SiC-SiO2 interfaces

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 16(4), 2191–2198.

By: G. Lucovsky, H. Yang & H. Massoud

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

Interface electronic transition observed by optical second-harmonic spectroscopy in beta-GaN/GaAs(001) heterostructures

PHYSICAL REVIEW B, 57(7), 3722–3725.

By: G. Lupke*, O. Busch*, C. Meyer*, H. Kurz*, O. Brandt*, H. Yang*, A. Trampert*, K. Ploog*, G. Lucovsky*

Source: Web Of Science
Added: August 6, 2018

1998 journal article

Interface formation and thermal stability of advanced metal gate and ultrathin gate dielectric layers

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 16(4), 2154–2158.

By: B. Claflin & G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

1998 article

Interface studies of tungsten nitride and titanium nitride composite metal gate electrodes with thin dielectric layers

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, Vol. 16, pp. 1757–1761.

By: B. Claflin n, M. Binger n & G. Lucovsky n

Source: Web Of Science
Added: August 6, 2018

1998 article

Interfacial sub-oxide regions at Si-SiO2 interfaces: minimization by post-oxidation rapid thermal anneal

Lucovsky, G., Koh, K., Chaflin, B., & Hinds, B. (1998, January). APPLIED SURFACE SCIENCE, Vol. 123, pp. 490–495.

By: G. Lucovsky n, K. Koh n, B. Chaflin n & B. Hinds n

Source: Web Of Science
Added: August 6, 2018

1998 journal article

Investigation of postoxidation thermal treatments of Si/SiO2 interface in relationship to the kinetics of amorphous Si suboxide decomposition

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 16(4), 2171–2176.

By: B. Hinds, F. Wang, D. Wolfe, C. Hinkle & G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

Low-temperature (<450 degrees C), plasma-assisted deposition of poly-Si thin films on SiO2 and glass through interface engineering (vol 15, pg 1035, 1997)

Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 16(1), 207.

By: D. Wolfe, F. Wang, S. Habermehl & G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

Minimization of dangling bond defects in hydrogenated silicon nitride dielectrics for thin film transistors (TFTs)

Journal of Non-Crystalline Solids, 230 (part B)(1998), 1221–1225.

By: G. Lucovsky & J. Phillips

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

Modeled tunnel currents for high dielectric constant dielectrics

IEEE TRANSACTIONS ON ELECTRON DEVICES, 45(6), 1350–1355.

By: E. Vogel n, K. Ahmed n, B. Hornung n, W. Henson n, P. McLarty*, G. Lucovsky n, . Hauser n, J. Wortman n

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

1998 article

Monolayer incorporation of nitrogen at Si-SiO2 interfaces: Interface characterization and electrical properties

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, Vol. 16, pp. 356–364.

By: G. Lucovsky n

Source: Web Of Science
Added: August 6, 2018

1998 article

Monolayer nitrogen atom incorporation at buried Si-SiO2 interfaces: Preparation by remote plasma oxidation/nitridation and characterization by on-line auger electron spectroscopy

Lucovsky, G., Niimi, H., Koh, K., & Green, M. L. (1998, February). SURFACE REVIEW AND LETTERS, Vol. 5, pp. 167–173.

By: G. Lucovsky n, H. Niimi n, K. Koh n & M. Green

UN Sustainable Development Goal Categories
6. Clean Water and Sanitation (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

1998 article

Optimization of nitrided gate dielectrics by plasma-assisted and rapid thermal processing

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, Vol. 16, pp. 1721–1729.

By: G. Lucovsky n, H. Niimi n, Y. Wu n, C. Parker n & . Hauser n

Source: Web Of Science
Added: August 6, 2018

1998 article

Plasma-engineered Si-SiO2 interfaces: monolayer nitrogen atom incorporation by low-temperature remote plasma-assisted oxidation in N2O

Koh, K., Niimi, H., & Lucovsky, G. (1998, January). SURFACE & COATINGS TECHNOLOGY, Vol. 98, pp. 1524–1528.

By: K. Koh n, H. Niimi n & G. Lucovsky n

author keywords: Si-SiO2 interfaces; N-atoms; N2O; Auger electron spectroscopy
Source: Web Of Science
Added: August 6, 2018

1998 journal article

Reaction pathways for intrinsic and extrinsic defect metastability in light-soaked hydrogenated amorphous silicon - the Staebler-Wronski effect

Journal of Non-Crystalline Solids, 230 (part A)(1998 May), 281–286.

By: G. Lucovsky & H. Yang

Source: NC State University Libraries
Added: August 6, 2018

1998 article

Stability of Si-O-F low-K dielectrics: Attack by water molecules as function of near-neighbor Si-F bonding arrangements

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, Vol. 16, pp. 1525–1528.

By: H. Yang n & G. Lucovsky n

UN Sustainable Development Goal Categories
6. Clean Water and Sanitation (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

1998 journal article

Study of SiOx decomposition kinetics and formation of Si nanocrystals in an SiOx matrix

Journal of Non-Crystalline Solids, 230 (part A)(1998 May), 507–512.

By: B. Hinds, F. Wang, D. Wolfe, C. Hinkle & G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

Tunneling currents through ultrathin oxide/nitride dual layer gate dielectrics for advanced microelectronic devices

JOURNAL OF APPLIED PHYSICS, 83(4), 2327–2337.

By: H. Yang n, H. Niimi n & G. Lucovsky n

Source: Web Of Science
Added: August 6, 2018

1998 journal article

Ultrathin nitride/oxide (N/O) gate dielectrics for p(+)-polysilicon gated PMOSFET's prepared by a combined remote plasma enhanced CVD thermal oxidation process

IEEE ELECTRON DEVICE LETTERS, 19(10), 367–369.

By: Y. Wu n & G. Lucovsky n

author keywords: boron penetration; gate dielectrics; nitride; N/O
Source: Web Of Science
Added: August 6, 2018

1998 article

Ultrathin oxide gate dielectrics prepared by low temperature remote plasma-assisted oxidation

Niimi, H., & Lucovsky, G. (1998, January). SURFACE & COATINGS TECHNOLOGY, Vol. 98, pp. 1529–1533.

By: H. Niimi n & G. Lucovsky n

author keywords: N-atom; Si-SiO2 interfaces; plasma-assisted oxidation
Source: Web Of Science
Added: August 6, 2018

1998 journal article

Ultrathin oxide-nitride gate dielectric MOSFET's

IEEE ELECTRON DEVICE LETTERS, 19(4), 106–108.

By: C. Parker n, G. Lucovsky n & . Hauser n

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

1997 article

Elimination of sub-oxide transition regions at Si-SiO2 interfaces by rapid thermal annealing at 900 degrees C

Lucovsky, G., Banerjee, A., Niimi, H., Koh, K., Hinds, B., Meyer, C., … Kurz, H. (1997, June). APPLIED SURFACE SCIENCE, Vol. 117, pp. 202–206.

By: G. Lucovsky n, A. Banerjee n, H. Niimi n, K. Koh n, B. Hinds n, C. Meyer*, G. Lupke*, H. Kurz*

author keywords: Si-SiO2 interfaces; sub-oxide transition regions; plasma processing; rapid thermal annealing
Source: Web Of Science
Added: August 6, 2018

1997 article