Gerald Lucovsky

Physics

Works (307)

2015 | journal article

Multipactor coating for sapphire RF windows using remote plasma-assisted deposition

IEEE Transactions on Plasma Science, 43(8), 2571–2580.

By: R. Ives, D. Zeller, G. Lucovsky, E. Schamiloglu, D. Marsden, G. Collins, K. Nichols, R. Karimov

Source: NC State University Libraries
Added: August 6, 2018

2014 | journal article

Remote plasma-processing (RPP), medium range order, and precursor sites for dangling bond defects in "amorphous-Si(H)" alloys: Photovoltaic and thin film transistor devices

Surface & Coatings Technology, 242, 183–186.

By: G. Lucovsky, D. Zeller, C. Cheng & Y. Zhang

Source: NC State University Libraries
Added: August 6, 2018

2013 | journal article

Band-edge electronic structure and pre-existing defects in remote plasma deposited non-crystalline SiO2 and GeO2

Japanese Journal of Applied Physics, 52(4).

By: G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

2013 | journal article

Band-edge electronic structures, and pre-existing defects in remote plasma deposited (RPD) non-crystalline (nc-) SiO2 and GeO2

Solid-State Electronics, 83, 30–36.

By: G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

2013 | conference paper

Ligand field splittings in core level transitions for transition metal (TM) oxides: Tanabe-Sugano diagrams and (TM) dangling bonds in vacated O-atom defects

In Xxist international symposium on the jahn-teller effect 2012 (Vol. 428).

By: G. Lucovsky, K. Wu, B. Pappas & J. Whitten

Source: NC State University Libraries
Added: August 6, 2018

2013 | conference paper

Nano-scale order in hydrogenated amorphous silicon a-Si,H and doped a-Si(H) defect reduction for device applications

In 2013 14th international conference on ultimate integration on silicon (ulis) (pp. 217–220).

By: G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

2013 | journal article

Noncrystalline SiO2 and GeO2: Process induced pre-existing defects and vacated O-atom intrinsic bonding sites

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 31(1).

By: G. Lucovsky, J. Kim, K. Wu & D. Zeller

Source: NC State University Libraries
Added: August 6, 2018

2013 | conference paper

Process induced pre-existing defects in non-crystalline SiO2 and GeO2 at vacated O-atom bonding sites and comparisons with Ge-S(Se) alloy bonding sites

In Xxist international symposium on the jahn-teller effect 2012 (Vol. 428).

By: G. Lucovsky, D. Zeller, J. Kim & K. Wu

Source: NC State University Libraries
Added: August 6, 2018

2013 | conference paper

Qualitative and quantitative differences between non-crystalline and nano-crystalline oxides in device technologies

In 2013 14th international conference on ultimate integration on silicon (ulis) (pp. 174–177).

By: G. Lucovsky & J. Kim

Source: NC State University Libraries
Added: August 6, 2018

2013 | journal article

Spectroscopic detection of medium range order in device grade hydrogenated amorphous silicon

Japanese Journal of Applied Physics, 52(4).

By: G. Lucovsky, G. Parsons, D. Zeller & J. Kim

Source: NC State University Libraries
Added: August 6, 2018

2013 | journal article

Transport through singlet states in resistive memory materials: Magneli-phase, TinO2n-1 for 9 >= n > 3, and TiO2-HfO2 alloys

Transport through singlet states in resistive memory materials: Magneli-phase, TinO2n-1 for 9 >= n > 3, and TiO2-HfO2 alloys. Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 31(1).

By: G. Lucovsky & J. Kim

Source: NC State University Libraries
Added: August 6, 2018

2012 | conference paper

Many-electron multiplet theory applied to O-vacancies in (i) nanocrystalline HfO2 and (ii) nn-crystalline SiO2 and Si oxynitride alloys

In Vibronic interactions and the jahn-teller effect: theory and applications (Vol. 23, pp. 193–211).

By: G. Lucovsky, L. Miotti & K. Bastos

Source: NC State University Libraries
Added: August 6, 2018

2012 | journal article

O-vacancies in (i) nano-crystalline HfO2 and (i) non-crystalline SiO2 and Si3N4 studied by X-ray absorption spectroscopy

Journal of Nanoscience and Nanotechnology, 12(6), 4811–4819.

By: G. Lucovsky, L. Miotti & K. Bastos

Source: NC State University Libraries
Added: August 6, 2018

2012 | journal article

Spectroscopic detection of hopping induced mixed valence for Ti and Sc in GdSc1-xTixO3 for x > 0.165

Spectroscopic detection of hopping induced mixed valence for Ti and Sc in GdSc1-xTixO3 for x > 0.165. Journal of Nanoscience and Nanotechnology, 12(6), 4749–4756.

By: G. Lucovsky, L. Miotti, K. Bastos, C. Adamo & D. Schlom

Source: NC State University Libraries
Added: August 6, 2018

2012 | conference paper

Spectroscopic detection of hopping induced mixed valence of Ti and Sc in GdSc1-xTixO3 for x greater than percolation threshold of 0.16

In Vibronic interactions and the jahn-teller effect: theory and applications (Vol. 23, pp. 361–376).

By: G. Lucovsky, L. Miotti & K. Bastos

Source: NC State University Libraries
Added: August 6, 2018

2011 | journal article

Bond-specific reaction kinetics during the oxidation of (111) Si: Effect of n-type doping

Applied Physics Letters, 98(2).

By: B. Gokce, D. Aspnes, G. Lucovsky & K. Gundogdu

Source: NC State University Libraries
Added: August 6, 2018

2011 | journal article

Characterizing the effects of etch-induced material modification on the crystallization properties of nitrogen doped Ge2Sb2Te5

Journal of Applied Physics, 109(3).

By: J. Washington, E. Joseph, S. Raoux, J. Jordan-Sweet, D. Miller, H. Cheng, A. Schrott, C. Chen ...

Source: NC State University Libraries
Added: August 6, 2018

2011 | journal article

Intermixing between HfO2 and GeO2 films deposited on Ge(001) and Si(001): Role of the substrate

Applied Physics Letters, 98(13).

By: G. Soares, C. Krug, L. Miotti, K. Bastos, G. Lucovsky, I. Baumvol, C. Radtke

Source: NC State University Libraries
Added: August 6, 2018

2011 | journal article

Many-electron multiplet theory applied to o-atom vacancies in high-k dielectrics

Japanese Journal of Applied Physics. Part 1, Regular Papers, Short Notes & Review Papers, 50(4).

By: G. Lucovsky, L. Miotti & K. Bastos

Source: NC State University Libraries
Added: August 6, 2018

2011 | journal article

Multiplet theory for conduction band edge and O-Vacancy defect states in SiO2, Si3N4, and Si oxynitride alloy thin films

Japanese Journal of Applied Physics. Part 1, Regular Papers, Short Notes & Review Papers, 50(4).

By: G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

2011 | journal article

Nanoscale depth-resolved electronic properties of SiO2/SiOx/SiO2 for device-tolerant electronics

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 29(1).

By: E. Katz, Z. Zhang, H. Hughes, K. Chung, G. Lucovsky & L. Brillson

Source: NC State University Libraries
Added: August 6, 2018

2011 | journal article

Non-crystalline SiO(2): processing induced pre-existing defects associated with vacated O-atom intrinsic bonding sites

Journal of Optoelectronics and Advanced Materials, 13(11-12), 1359–1363.

By: G. Lucovsky, J. Kim, K. Wu, D. Zeller, B. Papas & J. Whitten

Source: NC State University Libraries
Added: August 6, 2018

2011 | journal article

O-vacancies in (i) nanocrystalline HfO2 and (i) noncrystalline SiO2 and Si3N4 studied by x-ray absorption spectroscopy

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 29(1).

By: G. Lucovsky, L. Miotti & K. Bastos

Source: NC State University Libraries
Added: August 6, 2018

2011 | conference paper

O-vacancies in transition metal (TM) oxides: Coordination and local site symmetry of transition and negative ion states in TM(2)O(3) and TMO(2) oxides

In Microelectronic Engineering (Vol. 88, pp. 1471–1474).

By: G. Lucovsky, D. Zeller & J. Whitten

Source: NC State University Libraries
Added: August 6, 2018

2011 | conference paper

Radiation effects in new materials for nano-devices (invited)

In Microelectronic Engineering (Vol. 88, pp. 1259–1264).

By: R. Schrimpf, D. Fleetwood, M. Alles, R. Reed, G. Lucovsky & S. Pantelides

Source: NC State University Libraries
Added: August 6, 2018

2011 | conference paper

Remote plasma enhanced chemical deposition of non-crystalline GeO(2) on Ge and Si substrates

In Journal of Nanoscience and Nanotechnology (Vol. 11, pp. 7974–7981).

By: G. Lucovsky & D. Zeller

Source: NC State University Libraries
Added: August 6, 2018

2011 | conference paper

Remote plasma processing of sapphire substrates for deposition of TiN and TiO(2)

In Journal of Nanoscience and Nanotechnology (Vol. 11, pp. 7962–7968).

By: G. Lucovsky & J. Kim

Source: NC State University Libraries
Added: August 6, 2018

2011 | conference paper

Remote plasma-deposited GeO(2) with quartz-like Ge- and O-local bonding: Band-edge state and O-vacancy comparisons with SiO(2)

In Microelectronic Engineering (Vol. 88, pp. 1537–1540).

By: G. Lucovsky, D. Zeller, K. Wu & J. Whitten

Source: NC State University Libraries
Added: August 6, 2018

2011 | journal article

Spectroscopic detection of hopping induced mixed valence for Ti and Sc in GdSc1-xTixO3 for x greater than the percolation threshold of similar to 0.16

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 29(1).

By: G. Lucovsky, L. Miotti, K. Bastos, C. Adamo & D. Schlom

Source: NC State University Libraries
Added: August 6, 2018

2011 | journal article

Spectroscopic detection of medium range order in device quality hydrogenated amorphous silicon, a-Si(H)

Journal of Optoelectronics and Advanced Materials, 13(11-12), 1586–1589.

By: G. Lucovsky, G. Parsons, D. Zeller, K. Wu, B. Papas, J. Whitten, R. Lujan, R. Street

Source: NC State University Libraries
Added: August 6, 2018

2010 | conference paper

Analysis of the forgotten parts of the Ge K edge spectra: Life before the EXAFS oscillations

In Physica status solidi c - current topics in solid state physics, vol 7 no 3-4 (Vol. 7, pp. 844–847).

By: G. Lucovsky, J. Washington, L. Miotti & M. Paesler

Source: NC State University Libraries
Added: August 6, 2018

2010 | journal article

Enhanced leakage current properties of Ni-doped Ba0.6Sr0.4TiO3 thin films driven by modified band edge state

Journal of Applied Physics, 107(2).

By: H. Seo, Y. Kim, G. Lucovsky, I. Kim, K. Chung, H. Kobayashi, D. Choi

Source: NC State University Libraries
Added: August 6, 2018

2010 | conference paper

Ge doped HfO2 thin films investigated by x-ray absorption spectroscopy

In Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films (Vol. 28, pp. 693–696).

By: L. Miotti, K. Bastos, G. Lucovsky, C. Radtke & D. Nordlund

Source: NC State University Libraries
Added: August 6, 2018

2010 | conference paper

Monoclinic textured HfO2 films on GeOxNy/Ge(100) stacks using interface reconstruction by controlled thermal processing

In Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films (Vol. 28, pp. 662–664).

By: K. Bastos, L. Miotti, G. Lucovsky, K. Chung & D. Nordlund

Source: NC State University Libraries
Added: August 6, 2018

2010 | conference paper

Nano-regime length scales extracted from the first sharp diffraction peak in non-crystalline SiO2 and related materials: Device applications

In Nanoscale Research Letters (Vol. 5, pp. 550–558).

By: G. Lucovsky & J. Phillips

Source: NC State University Libraries
Added: August 6, 2018

2010 | journal article

Strain-reducing chemical bonding self-organizations in nanocrystalline composites and non-crystalline glasses and thin films

Physica Status Solidi. A, Applications and Materials Science, 207(3), 631–634.

By: G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

2010 | journal article

Untitled

Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 28(6), P1–1.

By: G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

2010 | conference paper

A microscopic bonding model for the compositional dependence of the first sharp diffraction peak (FSDP) in GexSe1-x alloys

In Physica status solidi c - current topics in solid state physics, vol 7 no 3-4 (Vol. 7, pp. 889–892).

By: G. Lucovsky & J. Phillips

Source: NC State University Libraries
Added: August 6, 2018

2009 | conference paper

Application of non-linear optical second harmonic generation and X-ray absorption and spectroscopies to defect related properties of Hf silicate and Hf Si oxynitride gate dielectrics

In Microelectronic Engineering (Vol. 86, pp. 1654–1657).

By: K. Gundogdu, G. Lucovsky, K. Chung, J. Kim & D. Nordlund

Source: NC State University Libraries
Added: August 6, 2018

2009 | book

Bonds and bands in semiconductors

New York: Momentum Press.

By: J. Phillips & G. Lucovsky.

Source: NC State University Libraries
Added: August 6, 2018

2009 | conference paper

Comparisons between intrinsic bonding defects in d(0) transition metal oxide such as HfO2, and impurity atom defects in d(0) complex oxides such as GdScO3

In Solid-state Electronics (Vol. 53, pp. 1273–1279).

By: G. Lucovsky, K. Chung, L. Miotti, K. Bastos, C. Amado & D. Schlom

Source: NC State University Libraries
Added: August 6, 2018

2009 | conference paper

Controlled chemical phase separation in binary and ternary composites: A pathway to isotropic optical and electrical behavior for device applications

In Physica Status Solidi. A, Applications and Materials Science (Online) (Vol. 206, pp. 915–918).

By: G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

2009 | journal article

Extrinsic interface formation of HfO2 and Al2O3/GeOx gate stacks on Ge (100) substrates

Journal of Applied Physics, 106(4).

By: H. Seo, F. Bellenger, K. Chung, M. Houssa, M. Meuris, M. Heyns, G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

2009 | journal article

Instability of incorporated nitrogen in HfO2 films grown on strained Si0.7Ge0.3 layers

Applied Physics Letters, 94(4).

By: K. Chung, G. Lucovsky, W. Lee, M. Cho & H. Jeon

Source: NC State University Libraries
Added: August 6, 2018

2009 | conference paper

Interfacial transition regions at germanium/Hf oxide based dielectric interfaces: Qualitative differences between non-crystalline Hf Si oxynitride and nanocrystalline HfO2 gate stacks

In Microelectronic Engineering (Vol. 86, pp. 224–234).

By: G. Lucovsky, S. Lee, J. Long, H. Seo & J. Luning

Source: NC State University Libraries
Added: August 6, 2018

2009 | journal article

Intrinsic bonding defects in thin-film non-crystalline solids: Amorphous silicon (a-Si), hydrogenated amorphous silicon (a-Si:H), amorphous selenium (a-Se) and amorphous selenium-arsenic alloys (a-AsxSe1-x)

Philosophical Magazine, 89(28-30), 2449–2460.

By: G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

2009 | conference paper

Long range cooperative and local Jahn-Teller effects in nanocrystalline transition metal thin films

In Jahn-teller effect: fundamentals and implications for physics and chemistry (Vol. 97, pp. 767–808).

By: G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

2009 | conference paper

Microscopic description of strain-reducing chemical bonding self-organizations in non-crystalline alloys

In Physica Status Solidi. A, Applications and Materials Science (Online) (Vol. 206, pp. 885–891).

By: G. Lucovsky & J. Phillips

Source: NC State University Libraries
Added: August 6, 2018

2009 | conference paper

Predeposition plasma nitridation process applied to Ge substrates to passivate interfaces between crystalline-Ge substrates and Hf-based high-K dielectrics

In Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures (Vol. 27, pp. 294–299).

By: G. Lucovsky, J. Long, K. Chung, H. Seo, B. Watts, R. Vasic, M. Ulrich

Source: NC State University Libraries
Added: August 6, 2018

2009 | journal article

Preparation of native oxide and carbon-minimized Ge surface by NH4OH-based cleaning for high-k/Ge MOS gate stacks

Journal of the Electrochemical Society, 156(11), H813–817.

By: H. Seo, K. Chung, J. Long & G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

2009 | conference paper

Spectroscopic differentiation between O-atom vacancy and divacancy defects, respectively, in TiO2 and HfO2 by X-ray absorption spectroscopy

In Microelectronic Engineering (Vol. 86, pp. 1676–1679).

By: G. Lucovsky, K. Chung, J. Kim & D. Norlund

Source: NC State University Libraries
Added: August 6, 2018

2009 | conference paper

Strain-eliminating chemical bonding self-organizations within intermediate phase (IP) windows in chalcogenide, oxide and nitride non-crystalline bulk glasses and deposited thin film binary, ternary and quaternary alloys

In Journal of Non-crystalline Solids (Vol. 355, pp. 1786–1791).

By: G. Lucovsky & J. Phillips

Source: NC State University Libraries
Added: August 6, 2018

2009 | journal article

Symmetry determined medium range order (MRO) contributions to the first sharp diffraction peak (FSDP) in non-crystalline oxide and chalcogenide glasses

Physica Status Solidi. B, Basic Solid State Physics, 246(8), 1806–1812.

By: G. Lucovsky & J. Phillips

Source: NC State University Libraries
Added: August 6, 2018

2009 | journal article

Thermal evolution and electrical correlation of defect states in Hf-based high-k dielectrics on n-type Ge (100): Local atomic bonding symmetry

Journal of Applied Physics, 106(7).

By: K. Chung, J. Long, H. Seo, G. Lucovsky & D. Nordlund

Source: NC State University Libraries
Added: August 6, 2018

2009 | conference paper

The influence of nitrogen doping on the chemical and local bonding environment of amorphous and crystalline Ge2Sb2Te5

In Materials and physics for nonvolatile memories (Vol. 1160, pp. 163–168).

By: J. Washington, E. Josep, M. Paesler, G. Lucovsky, J. Jordan-Sweet, S. Raoux, C. Chen, A. Pyzyna ...

Source: NC State University Libraries
Added: August 6, 2018

2008 | journal article

Bond constraint theory and the quest for the glass computer

Pramana, 70(2), 245–254.

By: S. Agarwal, M. Paesler, D. Baker, P. Taylor, G. Lucovsky & A. Edwards

Source: NC State University Libraries
Added: August 6, 2018

2008 | journal article

Bond constraint theory studies of chalcogenide phase change memories

Journal of Non-Crystalline Solids, 354(19-25), 2706–2710.

By: M. Paesler, D. Baker & G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

2008 | journal article

Bulk defects in nano-crystalline and in non-crystalline HfO2-based thin film dielectrics

Thin Solid Films, 517(1), 437–440.

By: S. Lee, H. Seo, G. Lucovsky, L. Fleming, M. Ulrich & J. Luning

Source: NC State University Libraries
Added: August 6, 2018

2008 | journal article

Chemical bonding and graded interfacial transition regions at transition metal, Hf(Zr),/high-k gate dielectric, Hf(Zr)O-2, interfaces

Thin Solid Films, 517(1), 343–345.

By: G. Lucovsky & J. Whitten

Source: NC State University Libraries
Added: August 6, 2018

2008 | journal article

Defect scaling in non-crystalline floppy/under-constrained and rigid/over-constrained thin films: Applications to a-Se, a-Si, and a-Si(H)

Journal of Non-Crystalline Solids, 354(19-25), 2724–2727.

By: G. Lucovsky, S. Kasap & J. Phillips

Source: NC State University Libraries
Added: August 6, 2018

2008 | journal article

Elimination of GeO2 and Ge3N4 interfacial transition regions and defects at n-type Ge interfaces: A pathway for formation of n-MOS devices on Ge substrates

Applied Surface Science, 254(23), 7933–7937.

By: G. Lucovsky, S. Lee, J. Long, H. Seo & J. Luning

Source: NC State University Libraries
Added: August 6, 2018

2008 | journal article

Length scale discontinuities between non-crystalline and nano-crystalline thin films: Chemical bonding self-organization, broken constraints and reductions of macroscopic strain

Journal of Non-Crystalline Solids, 354(19-25), 2702–2705.

By: G. Lucovsky & J. Phillips

Source: NC State University Libraries
Added: August 6, 2018

2008 | journal article

Low energy electron-excited nanoscale luminescence spectroscopy studies of intrinsic defects in HfO2 and SiO2-HfO2-SiO2-Si stacks

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 26(1), 232–243.

By: Y. Strzhemechny, M. Bataiev, S. Tumakha, S. Goss, C. Hinkle, C. Fulton, G. Lucovsky, L. Brillson

Source: NC State University Libraries
Added: August 6, 2018

2008 | journal article

Reversible chemical phase separation in on-state of art ReWritable (RW) Ge2Sb2Te5 optical phase change memories

Journal of Non-Crystalline Solids, 354(19-25), 2753–2756.

By: G. Lucovsky & J. Phillips

Source: NC State University Libraries
Added: August 6, 2018

2008 | journal article

Suppression of Ge-O and Ge-N bonding at Ge-HfO2 and Ge-TiO2 interfaces by deposition onto plasma-nitrided passivated Ge substrates

Thin Solid Films, 517(1), 155–158.

By: S. Lee, J. Long, G. Lucovsky & J. Luning

Source: NC State University Libraries
Added: August 6, 2018

2008 | journal article

Suppression of Ge-O and Ge-N bonding at Ge-HfO2 and Ge-TiO2 interfaces by deposition onto plasma-nitrided passivated Ge substrates: Integration issues Ge gate stacks into advanced devices

Microelectronics Reliability, 48(3), 364–369.

By: S. Lee, J. Long, G. Lucovsky, J. Whitten, H. Seo & J. Luning

Source: NC State University Libraries
Added: August 6, 2018

2008 | journal article

Suppression of defect states in HfSiON gate dielectric films on n-type Ge(100) substrates

Applied Physics Letters, 93(18).

By: K. Chung, H. Seo, J. Long & G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

2007 | review

Band edge electronic structure of transition metal/rare earth oxide dielectrics

Rare Earth Oxide Thin Films: Growth , Characterization , and Applications. Berlin: Springer-Verlag Berlin.

By: G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

2007 | journal article

Bond constraint theory and EXAFS studies of local bonding structures of Ge2Sb2Te4, Ge2Sb2Te5, and Ge2Sb2Te7

Journal of Optoelectronics and Advanced Materials, 9(10), 2996–3001.

By: M. Paesler, D. Baker, G. Lucovsky, P. Taylor & J. Washington

Source: NC State University Libraries
Added: August 6, 2018

2007 | journal article

Chemical self-organization length scales in non- and nano-crystalline thin films

Solid-State Electronics, 51(10), 1308–1318.

By: G. Lucovsky & J. Phillips

Source: NC State University Libraries
Added: August 6, 2018

2007 | journal article

Defect reduction by suppression of pi-bonding coupling in nano- and non-crystalline high-(medium)-kappa gate dielectrics

Microelectronic Engineering, 84(9-10), 2350–2353.

By: G. Lucovsky, H. Seo, S. Lee, L. Fleming, M. Ulrich & J. Luning

Source: NC State University Libraries
Added: August 6, 2018

2007 | journal article

Defect reduction in non-crystalline and nano-crystalline thin films: chemical bonding self-organizations and minimization of macroscopic strain

Journal of Optoelectronics and Advanced Materials, 9(10), 2989–2995.

By: G. Lucovsky & J. Phillips

Source: NC State University Libraries
Added: August 6, 2018

2007 | journal article

EXAFS study of local order in the amorphous chalcogenide semiconductor Ge2Sb2Te5

Journal of Physics and Chemistry of Solids, 68(5-6), 873–877.

By: M. Paesler, D. Baker, G. Lucovsky, A. Edwards & P. Taylor

Source: NC State University Libraries
Added: August 6, 2018

2007 | journal article

Effect of Ga on the structure of Ge-Se-Ga glasses from thermal analysis, Raman and XPS measurements

Journal of Materials Science. Materials in Electronics., 18, S367–370.

By: K. Maeda, T. Sakai, K. Sakai, T. Ikari, M. Munzar, D. Tonchev, S. Kasap, G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

2007 | journal article

Intermediate phases in binary and ternary alloys. How far can we go with a semi-empirical bond-constraint theory?

Journal of Optoelectronics and Advanced Materials, 9(10), 2979–2988.

By: G. Lucovsky, D. Baker, M. Paesler, J. Phillips & M. Thorpe

Source: NC State University Libraries
Added: August 6, 2018

2007 | journal article

Intermediate phases in binary and ternary alloys: a new perspective on semi-empirical bond constraint theory

Journal of Physics. Condensed Matter, 19(45).

By: G. Lucovsky & J. Phillips

Source: NC State University Libraries
Added: August 6, 2018

2007 | journal article

Intrinsic electronically active defects in transition metal elemental oxides

Communications & Review Papers, 46(4B), 1899–1909.

By: G. Lucovsky, H. Seo, S. Lee, L. Fleming, M. Ulrich, J. Luning, P. Lysaght, G. Bersuker

Source: NC State University Libraries
Added: August 6, 2018

2007 | journal article

Jahn-Teller d-state term splittings in Ti, Zr, and Hf elemental oxides: Intrinsic bonding/anti-bonding states and conduction/valence band edge intrinsic defects

Journal of Molecular Structure [Including Theochem], 838(1-3), 187–192.

By: G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

2007 | journal article

Length scales for coherent pi-bonding interactions in complex high-k oxide dielectrics and their interfaces

Microelectronic Engineering, 84(9-10), 2298–2301.

By: H. Seo, G. Lucovsky, L. Fleming, M. Ulrich, J. Luning, G. Koster, T. Geballe

Source: NC State University Libraries
Added: August 6, 2018

2007 | journal article

Local bonding arrangements in amorphous Ge2Sb2Te5: the importance of Ge and Te bonding

Journal of Materials Science. Materials in Electronics., 18, S399–403.

By: D. Baker, M. Paesler & G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

2007 | journal article

Metal gate electrodes for devices with high-k gate dielectrics: Zr/ZrO2 and Hf/HfO2 intrinsic interfacial transition regions

Microelectronic Engineering, 84(9-10), 2259–2262.

By: G. Lucovsky & J. Whitten

Source: NC State University Libraries
Added: August 6, 2018

2007 | journal article

Metal gate electrodes: Theoretical studies of Zr/ZrO2 and Hf/HfO2 interfaces

Surface Science, 601(18), 4138–4143.

By: G. Lucovsky & J. Whitten

Source: NC State University Libraries
Added: August 6, 2018

2007 | journal article

Origin of charge density at LaAlO3 on SrTiO3 heterointerfaces: Possibility of intrinsic doping

Physical Review Letters, 98(19).

By: W. Siemons, G. Koster, H. Yamamoto, W. Harrison, G. Lucovsky, T. Geballe, D. Blank, M. Beasley

Source: NC State University Libraries
Added: August 6, 2018

2007 | journal article

Spectroscopic and electrical detection of intermediate phases and chemical bonding self-organizations in (i) dielectric films for semiconductor devices, and (ii) chalcogenide alloys for optical memory devices

Journal of Non-Crystalline Solids, 353(18-21), 1713–1722.

By: G. Lucovsky, D. Baker, M. Paesler & J. Phillips

Source: NC State University Libraries
Added: August 6, 2018

2007 | journal article

Spectroscopic studies of O-vacancy defects in transition metal oxides

Journal of Materials Science. Materials in Electronics., 18, S263–266.

By: G. Lucovsky, J. Luning, L. Fleming, M. Ulrich, J. Rowe, H. Seo, S. Lee, P. Lysaght, G. Bersuker

Source: NC State University Libraries
Added: August 6, 2018

2007 | journal article

Studies of bonding defects, and defect state suppression in HfO2 by soft X-ray absorption and photoelectron spectroscopies

Surface Science, 601(18), 4236–4241.

By: G. Lucovsky, H. Seo, L. Fleming, J. Luning, P. Lysaght & G. Bersuker

Source: NC State University Libraries
Added: August 6, 2018

2007 | article

Suppression of Jahn-Teller term-split band edge states in the X-ray absorption spectra of non-crystalline Zr silicates and Si oxynitride alloys, and alloys of ZrO2 with Y2O3 (vol 75, pg 1591, 2006)

Radiation Physics and Chemistry.

By: G. Lucovsky, C. Fulton, B. Ju, N. Stoute, H. Seo, D. Aspnes, J. Luning

Source: NC State University Libraries
Added: August 6, 2018

2007 | journal article

Total dose and bias temperature stress effects for HfSiON on Si MOS capacitors

IEEE Transactions on Nuclear Science, 54(6), 1931–1937.

By: D. Chen, E. Mamouni, X. Zhou, R. Schrimpf, D. Fleetwood, K. Galloway, S. Lee, H. Seo ...

Source: NC State University Libraries
Added: August 6, 2018

2007 | journal article

A new class of intermediate phases in non-crystalline films based on a confluent double percolation mechanism

Journal of Physics. Condensed Matter, 19(45).

By: G. Lucovsky & J. Phillips

Source: NC State University Libraries
Added: August 6, 2018

2007 | journal article

A self-consistent model for defect states in a-Si and a-Si : H

Journal of Materials Science. Materials in Electronics., 18, S463–467.

By: G. Lucovsky & J. Phillips

Source: NC State University Libraries
Added: August 6, 2018

2006 | journal article

Application of bond constraint theory to the switchable optical memory material Ge2Sb2Te5

Physical Review Letters, 96(25).

By: D. Baker, M. Paesler, G. Lucovsky, S. Agarwal & P. Taylor

Source: NC State University Libraries
Added: August 6, 2018

2006 | journal article

Band edge electronic structure of transition metal/rare earth oxide dielectrics

Applied Surface Science, 253(1), 311–321.

By: G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

2006 | journal article

Comparison of ultrathin SiO2/Si(100) and SiO2/Si(111) interfaces from soft x-ray photoelectron spectroscopy

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 24(4), 2132–2137.

By: M. Ulrich, J. Rowe, J. Keister, H. Niimi, L. Fleming & G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

2006 | journal article

Detection of nanocrystallinity by X-ray absorption spectroscopy in thin film transition metal/rare-earth atom, elemental and complex oxides

Radiation Physics and Chemistry, 75(11), 1608–1612.

By: L. Edge, D. Schlom, S. Stemmer, G. Lucovsky & J. Luning

Source: NC State University Libraries
Added: August 6, 2018

2006 | journal article

Differences between charge trapping states in irradiated nano-crystalline HfO2 and non-crystalline Hf silicates

IEEE Transactions on Nuclear Science, 53(6), 3644–3648.

By: G. Lucovsky, D. Fleetwood, S. Lee, H. Seo, R. Schrimpf, J. Felix, J. Luning, L. Fleming, M. Ulrich, D. Aspnes

Source: NC State University Libraries
Added: August 6, 2018

2006 | journal article

EXAFS study of amorphous Ge2Sb2Te5

Journal of Non-Crystalline Solids, 352(9-20), 1621–1623.

By: D. Baker, M. Paesler, G. Lucovsky & P. Taylor

Source: NC State University Libraries
Added: August 6, 2018

2006 | journal article

EXAFS study of local order in the amorphous chalcogenide semiconductor Ge2Sb2Te5

Journal of Optoelectronics and Advanced Materials, 8(6), 2039–2043.

By: M. Paesler, D. Baker, G. Lucovsky, A. Edwards & P. Taylor

Source: NC State University Libraries
Added: August 6, 2018

2006 | journal article

Electronic properties of the Zr-ZrO2-SiO2-Si(100) gate stack structure

Journal of Applied Physics, 99(6).

By: C. Fulton, G. Lucovsky & R. Nemanich

Source: NC State University Libraries
Added: August 6, 2018

2006 | journal article

Intrinsic bonding defects in transition metal elemental oxides

Microelectronics Reliability, 46(9-11), 1623–1628.

By: G. Lucovsky, H. Seo, L. Fleming, M. Ulrich, J. Luning, P. Lysaght, G. Bersuker

Source: NC State University Libraries
Added: August 6, 2018

2006 | journal article

Intrinsic nanocrystalline grain-boundary and oxygen atom vacancy defects in ZrO2 and HfO2

Radiation Physics and Chemistry, 75(11), 2097–2101.

By: G. Lucovsky, C. Hinkle, C. Fulton, N. Stoute, H. Seo & J. Luning

Source: NC State University Libraries
Added: August 6, 2018

2006 | journal article

Network disruption and modification in arsenic and germanium chalcogenides by the addition of univalent metal sulfides and selenides: Comparisons with network disruption and modification in zirconium silicate alloys

Journal of Non-Crystalline Solids, 352(9-20), 1534–1538.

By: G. Lucovsky & J. Phillips

Source: NC State University Libraries
Added: August 6, 2018

2006 | journal article

Reduction of bonding constraints by self-organization in gate dielectrics for a-Si : H thin film transistors (TFTs) and crystalline Si field effect transistors (FETs)

Journal of Non-Crystalline Solids, 352(9-20), 1711–1714.

By: G. Lucovsky & J. Phillips

Source: NC State University Libraries
Added: August 6, 2018

2006 | journal article

Reduction of bulk and interface defects by network self-organizations in gate dielectrics for silicon thin film and field effect transistors (TFTs and FETs, respectively)

Journal of Non-Crystalline Solids, 352(42-49), 4509–4516.

By: G. Lucovsky & J. Phillips

Source: NC State University Libraries
Added: August 6, 2018

2006 | journal article

Reduction of defects by network self-organizations in non-crystalline dielectrics and semiconductors: a tribute to Professor Radu Grigorovici on the occasion of his 95(th) birthday

Journal of Optoelectronics and Advanced Materials, 8(6), 1969–1978.

By: G. Lucovsky & J. Phillips

Source: NC State University Libraries
Added: August 6, 2018

2006 | journal article

Thermal stability of TiO2, ZrO2, or HfO2 on Si(100) by photoelectron emission microscopy

Journal of Applied Physics, 99(2).

By: M. Zeman, C. Fulton, G. Lucovsky, R. Nemanich & W. Yang

Source: NC State University Libraries
Added: August 6, 2018

2006 | article

Thermal stability of TiO2, ZrO2, or HfO2 on Si(100) by photoelectron emission microscopy (vol 99, pg 023519, 2006)

Journal of Applied Physics.

By: M. Zeman, C. Fulton, G. Lucovsky, R. Nemanich & W. Yang

Source: NC State University Libraries
Added: August 6, 2018

2006 | journal article

A study of conduction band edge states in complex oxides by X-ray absorption spectroscopy

Radiation Physics and Chemistry, 75(11), 1934–1938.

By: C. Fulton, L. Edge, G. Lucovsky & J. Luning

Source: NC State University Libraries
Added: August 6, 2018

2005 | journal article

Bond strain and defects at interfaces in high-k gate stacks

Microelectronics Reliability, 45(06-May), 770–778.

By: G. Lucovsky & J. Phillips

Source: NC State University Libraries
Added: August 6, 2018

2005 | journal article

Conduction band states of transition metal (TM) high-k gate dielectrics as determined from X-ray absorption spectra

Microelectronics Reliability, 45(06-May), 827–830.

By: G. Lucovsky, J. Hong, C. Fulton, N. Stoute, Y. Zou, R. Nemanich, D. Aspnes, H. Ade, D. Schlom

Source: NC State University Libraries
Added: August 6, 2018

2005 | journal article

Conduction band-edge d-states in high-k dielectrics due to Jahn-Teller term splittings

Thin Solid Films, 486(02-Jan), 129–135.

By: G. Lucovsky, C. Fulton, Y. Zhang, J. Luning, L. Edge, J. Whitten, R. Nemanich, D. Schlom, V. Afanase'v

Source: NC State University Libraries
Added: August 6, 2018

2019 | journal article

Conduction band-edge states associated with the removal of d-state degeneracies by the Jahn-Teller effect

IEEE Transactions on Device and Materials Reliability, 5(1), 65–83.

By: G. Lucovsky, C. Fulton, Y. Zhang, Y. Zou, J. Luning, L. Edge, J. Whitten, R. Nemanich ...

Source: NC State University Libraries
Added: August 6, 2018

2005 | journal article

Defects and defect relaxation at internal interfaces between high-k transition metal and rare earth dielectrics and interfacial native oxides in metal oxide semiconductor (MOS) structures

Thin Solid Films, 486(02-Jan), 200–204.

By: G. Lucovsky & J. Phillips

Source: NC State University Libraries
Added: August 6, 2018

2019 | journal article

Final state effects in VUV and soft X-ray absorption spectra of transition metal oxides and silicate alloys: comparisons between experiment and ab initio calculations

Journal of Electron Spectroscopy and Related Phenomena, 144, 917–919.

Source: NC State University Libraries
Added: August 6, 2018

2019 | journal article

Intrinsic band edge traps in nano-crystalline HfO2 gate dielectrics

Microelectronic Engineering, 80, 110–113.

By: G. Lucovsky, Y. Zhang, J. Luning, V. Afanase'v, A. Stesmans, S. Zollner, D. Triyoso, B. Rogers, J. Whitten

Source: NC State University Libraries
Added: August 6, 2018

2019 | journal article

Non-crystalline oxides and chalcogenides: A new paradigm based on ab initio quantum chemistry calculations for short range order and properties, and bond-constraint theory for network connectivity, network disruption and chemical phase separation

Journal of Optoelectronics and Advanced Materials, 7(4), 1691–1706.

By: G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

2005 | journal article

Self-organization and the physics of glassy networks

Philosophical Magazine, 85(32), 3823–3838.

By: P. Boolchand, G. Lucovsky, J. Phillips & M. Thorpe

Source: NC State University Libraries
Added: August 6, 2018

2019 | journal article

Studies of the coupling of final d*-states in mixed Hf and Ti oxides (HfO2)(x)(TiOx)(1-x) and other complex oxides

Journal of Electron Spectroscopy and Related Phenomena, 144, 913–916.

Source: NC State University Libraries
Added: August 6, 2018

2004 | journal article

Ab initio theory calculations of the electronic structure of nc-AS(2)S(3) and GeS2: an intrinsic mechanism for reversible photo-darkening

Journal of Non-Crystalline Solids, 338-40(Jun 15 2004), 543–547.

By: T. Mowrer, G. Lucovsky, L. Sremaniak & J. Whitten

Source: NC State University Libraries
Added: August 6, 2018

2004 | journal article

Band alignment between (100)Si and complex rare earth/transition metal oxides

Applied Physics Letters, 85(24), 5917–5919.

By: V. Afanas'ev, A. Stesmans, C. Zhao, M. Caymax, T. Heeg, J. Schubert, Y. Jia, D. Schlom, G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

2004 | journal article

Bond strain and defects at Si-SiO2 and internal dielectric interfaces in high-k gate stacks

Journal of Physics. Condensed Matter, 16(44), S5139–5151.

By: G. Lucovsky & J. Phillips

Source: NC State University Libraries
Added: August 6, 2018

2004 | journal article

Breakdown and reliability of p-MOS devices with stacked RPECVD oxide/nitride gate dielectric under constant voltage stress

Microelectronics Reliability, 44(2), 207–212.

By: Y. Lee, Y. Wu & G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

2004 | journal article

Chemical phase separation in Zr silicate alloys: a spectroscopic study distinguishing between chemical phase separation with different degree of micro- and nano-crystallinity

Microelectronic Engineering, 72(04-Jan), 304–309.

By: G. Rayner, D. Kang, C. Hinkle, J. Hong & G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

2004 | journal article

Chemical phase separation in Zr silicate alloys: a spectroscopic study distinguishing between chemical phase separation with different degrees of micro- and nano-crystallinity

Journal of Non-Crystalline Solids, 338-40(Jun 15 2004), 151–154.

By: G. Rayner, D. Kang & G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

2004 | journal article

Electron trapping in metal-insulator-semiconductor structures on n-GaN with SiO2 and Si3N4 dielectrics

Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 22(6), 2379–2383.

By: C. Bae, C. Krug & G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

2004 | journal article

Enhanced tunneling in stacked gate dielectrics with ultra-thin HfO2 (ZrO2) layers sandwiched between thicker SiO2 layers

Surface Science, 566(Sep 20 2004), 1185–1189.

By: C. Hinkle, C. Fulton, R. Nemanich & G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

2004 | journal article

Enhanced tunneling in stacked gate dielectrics with ultra-thin HfO2 layers sandwiched between thicker SiO2 layers

Applied Surface Science, 234(37990), 240–245.

By: C. Hinkle, C. Fulton, R. Nemanich & G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

2004 | journal article

Interface instabilities and electronic properties of ZrO2 on silicon (100)

Journal of Applied Physics, 96(5), 2665–2673.

By: C. Fulton, T. Cook, G. Lucovsky & R. Nemanich

Source: NC State University Libraries
Added: August 6, 2018

2004 | journal article

Interfacial strain-induced self-organization in semiconductor dielectric gate stacks. I. Strain relief at the Si-SiO2 interface

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 22(4), 2087–2096.

By: G. Lucovsky & J. Phillips

Source: NC State University Libraries
Added: August 6, 2018

2004 | journal article

Interfacial strain-induced self-organization in semiconductor dielectric gate stacks. II. Strain-relief at internal dielectric interfaces between SiO2 and alternative gate dielectrics

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 22(4), 2097–2104.

By: G. Lucovsky, J. Maria & J. Phillips

Source: NC State University Libraries
Added: August 6, 2018

2004 | journal article

Local atomic structure and infrared effective charges in tetrahedrally-bonded glasses from ab initio theory electronic structure calculations

Journal of Non-Crystalline Solids, 338-40(Jun 15 2004), 155–158.

By: G. Lucovsky, T. Mowrer, L. Sremaniak & J. Whitten

Source: NC State University Libraries
Added: August 6, 2018

2004 | journal article

Low-temperature preparation of GaN-SiO2 interfaces with low defect density. I. Two-step remote plasma-assisted oxidation-deposition process

Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 22(6), 2402–2410.

By: C. Bae & G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

2004 | journal article

Low-temperature preparation of GaN-SiO2 interfaces with low defect density. II. Remote plasma-assisted oxidation of GaN and nitrogen incorporation

Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 22(6), 2411–2418.

By: C. Bae & G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

2004 | patent

Methods of forming binary noncrystalline oxide analogs of silicon dioxide

Lucovsky, G. (2004, February 3). Washington, DC: U.S. Patent and Trademark Office.

By: G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

2004 | journal article

Microscopic bonding and macroscopic strain relaxations at Si-SiO2 interfaces

Applied Physics. A, Materials Science & Processing (Online), 78(4), 453–459.

By: G. Lucovsky & J. Phillips

Source: NC State University Libraries
Added: August 6, 2018

2004 | journal article

Nitrogen bonding, stability, and transport in AlON films on Si

Applied Physics Letters, 84(24), 4992–4994.

By: G. Soares, K. Bastos, R. Pezzi, L. Miotti, C. Driemeier, I. Baumvol, C. Hinkle, G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

2004 | patent

Non-crystalline oxides for use in microelectronic, optical, and other applications

Lucovsky, G., & Parsons, G. N. (2004, September 7). Washington, DC: U.S. Patent and Trademark Office.

By: G. Lucovsky & G. Parsons

Source: NC State University Libraries
Added: August 6, 2018

2004 | journal article

Process-dependent band structure changes of transition-metal (Ti,Zr,Hf) oxides on Si (100)

Applied Physics Letters, 84(4), 580–582.

By: C. Fulton, G. Lucovsky & R. Nemanich

Source: NC State University Libraries
Added: August 6, 2018

2004 | journal article

Reductions in interface defects, D-it, by post oxidation plasma-assisted nitridation of GaN-SiO2 interfaces in MOS devices

Surface Science, 566(Sep 20 2004), 356–360.

By: C. Bae & G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

2004 | journal article

Reductions in interface defects, D-it, by post oxidation plasma-assisted nitridation of GaN-SiO2 interfaces in MOS devices

Microelectronic Engineering, 72(04-Jan), 236–240.

By: C. Bae & G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

2004 | journal article

Reductions in interface defects, D-it, by post-oxidation plasma-assisted nitridation of GaN-SiO2 interfaces in MOS devices

Applied Surface Science, 234(37990), 475–479.

By: C. Bae & G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

2004 | journal article

Remote plasma-assisted oxidation of SiC: a low temperature process for SiC-SiO2 interface formation that eliminates interfacial Si oxycarbide transition regions

Journal of Physics. Condensed Matter, 16(17), S1815–1837.

By: G. Lucovsky & H. Niimi

Source: NC State University Libraries
Added: August 6, 2018

2004 | journal article

Separate and independent control of interfacial band alignments and dielectric constants in transition metal rare earth complex oxides

Microelectronic Engineering, 72(04-Jan), 288–293.

By: G. Lucovsky, Y. Zhang, J. Whitten, D. Schlom & J. Freeouf

Source: NC State University Libraries
Added: August 6, 2018

2004 | journal article

Spectroscopic characterization of high k dielectrics: Applications to interface electronic structure and stability against chemical phase separation

Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 22(4), 1301–1308.

By: C. Krug & G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

2004 | journal article

Spectroscopic studies of metal high-k dielectrics: transition metal oxides and silicates, and complex rare earth/transition metal oxides

Lucovsky, G., Hong, J. G., Fulton, C. C., Zou, Y., Nemanich, R. J., Ade, H., … Freeouf, J. L. Physica Status Solidi. B, Basic Solid State Physics, 241(10), 2221–2235.

By: G. Lucovsky, J. Hong, C. Fulton, Y. Zou, R. Nemanich, H. Ade, D. Scholm, J. Freeouf

Source: NC State University Libraries
Added: August 6, 2018

2004 | journal article

Spectroscopic studies of the electrical structure of transition metal and rare earth complex oxides

Physica. E, Low-Dimensional Systems & Nanostructures, 21(04-Feb), 712–716.

By: G. Lucovsky, Y. Zhang, J. Whitten, D. Schlom & J. Freeouf

Source: NC State University Libraries
Added: August 6, 2018

2004 | journal article

Suppression of subcutaneous oxidation during the deposition of amorphous lanthanum aluminate on silicon

Applied Physics Letters, 84(23), 4629–4631.

By: L. Edge, D. Schlom, R. Brewer, Y. Chabal, J. Williams, S. Chambers, C. Hinkle, G. Lucovsky ...

Source: NC State University Libraries
Added: August 6, 2018

2004 | journal article

Surface passivation of n-GaN by nitrided-thin-Ga2O3/SiO2 and Si3N4 films

Journal of Applied Physics, 96(5), 2674–2680.

By: C. Bae, C. Krug, G. Lucovsky, A. Chakraborty & U. Mishra

Source: NC State University Libraries
Added: August 6, 2018

2004 | journal article

Thermal stability of plasma-nitrided aluminum oxide films on Si

Applied Physics Letters, 84(1), 97–99.

By: K. Bastos, R. Pezzi, L. Miotti, G. Soares, C. Driemeier, J. Morais, I. Baumvol, C. Hinkle, G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

2004 | journal article

Work-function difference between Al and n-GaN from Al-gated n-GaN/nitrided-thin-Ga2O3/SiO2 metal oxide semiconductor structures

Applied Physics Letters, 84(26), 5413–5415.

By: C. Bae, C. Krug, G. Lucovsky, A. Chakraborty & U. Mishra

Source: NC State University Libraries
Added: August 6, 2018

2004 | journal article

X-ray absorption spectra for transition metal high-kappa dielectrics: Final state differences for intra- and inter-atomic transitions

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 22(4), 2132–2138.

By: G. Lucovsky, J. Hong, C. Fulton, Y. Zou, R. Nemanich & H. Ade

Source: NC State University Libraries
Added: August 6, 2018

2004 | journal article

A novel approach for determining the effective tunneling mass of electrons in HfO2 and other high-K alternative gate dielectrics for advanced CMOS devices

Microelectronic Engineering, 72(04-Jan), 257–262.

By: C. Hinkle, C. Fulton, R. Nemanich & G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

2004 | journal article

A spectroscopic phase separation study distinguishing between chemical with different degrees of crystallinity in Zr(Hf) silicate alloys

Surface Science, 566(Sep 20 2004), 772–776.

By: G. Lucovsky, G. Rayner, D. Kang, C. Hinkle & J. Hong

Source: NC State University Libraries
Added: August 6, 2018

2004 | journal article

A spectroscopic study distinguishing between chemical phase separation with different degrees of crystallinity in Hf(Zr) silicate alloys

Applied Surface Science, 234(37990), 429–433.

By: G. Lucovsky, G. Rayner, D. Kang, C. Hinkle & J. Hong

Source: NC State University Libraries
Added: August 6, 2018

2003 | journal article

American Vacuum Society leadership in electronic materials processing: Past, present, and future

Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 21(5), S175–181.

By: G. Lucovsky & G. Rubloff

Source: NC State University Libraries
Added: August 6, 2018

2003 | journal article

Band offset energies in zirconium silicate Si alloys

Applied Surface Science, 216(04-Jan), 215–222.

By: G. Lucovsky, B. Rayner, Y. Zhang, G. Appel & J. Whitten

Source: NC State University Libraries
Added: August 6, 2018

2003 | journal article

Band offset measurements of the GaN (0001)/HfO2 interface

Journal of Applied Physics, 94(11), 7155–7158.

Source: NC State University Libraries
Added: August 6, 2018

2003 | journal article

Band offset measurements of the Si3N4/GaN (0001) interface

Journal of Applied Physics, 94(6), 3949–3954.

Source: NC State University Libraries
Added: August 6, 2018

2003 | patent

Binary non-crystalline oxide analogs of silicon dioxide for use in gate dielectrics

Lucovsky, G. (2003, April 22). Washington, DC: U.S. Patent and Trademark Office.

By: G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

2003 | journal article

Contributions to the infrared effective charges of oxides and chalcogenides from equilibrium charge and dynamic charge redistribution during normal mode motions

Applied Surface Science, 212(2003 May 15), 839–843.

By: L. Sremaniak, J. Whitten, M. Menon & G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

2003 | journal article

Device-quality GaN-dielectric interfaces by 300 degrees C remote plasma processing

Applied Surface Science, 216(04-Jan), 119–123.

By: C. Bae, G. Rayner & G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

2003 | journal article

Electronic structure of transition metal high-k dielectrics: interfacial band offset energies for microelectronic devices

Applied Surface Science, 212(2003 May 15), 563–569.

By: G. Lucovsky, G. Raynor, Y. Zhang, C. Fulton, R. Nemanich, G. Appel, H. Ade, J. Whitten

Source: NC State University Libraries
Added: August 6, 2018

2003 | journal article

Electronic structure of transition metal/rare earth alternative high-K gate dielectrics: interfacial band alignments and intrinsic defects

Microelectronics Reliability, 43(11-Sep), 1417–1426.

By: G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

2003 | journal article

Low temperature semiconductor surface passivation for nanoelectronic device applications

Surface Science, 532(2003 Jun 10), 759–763.

By: C. Bae & G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

2003 | journal article

Measurement of the band offsets of SiO2 on clean n- and p-type GaN(0001)

Journal of Applied Physics, 93(7), 3995–4004.

Source: NC State University Libraries
Added: August 6, 2018

2003 | journal article

Oxide formation and passivation for micro- and nano-electronic devices

Applied Surface Science, 212(2003 May 15), 644–648.

By: C. Bae & G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

2003 | journal article

Remote plasma-assisted nitridation (RPN): applications to Zr and Hf silicate alloys and Al2O3

Applied Surface Science, 216(04-Jan), 124–132.

By: C. Hinkle & G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

2003 | journal article

Soft x-ray photoelectron spectroscopy of (HfO2)(x)(SiO2)(1-x) high-k gate-dielectric structures

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 21(4), 1777–1782.

By: M. Ulrich, J. Hong, J. Rowe, G. Lucovsky, A. Chan & T. Madey

Source: NC State University Libraries
Added: August 6, 2018

2003 | journal article

Spectroscopic study of chemical phase separation in zirconium silicate alloys

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 21(4), 1783–1791.

By: G. Rayner, D. Kang & G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

2003 | journal article

Structural dependence of breakdown characteristics and electrical degradation in ultrathin RPECVD oxide/nitride gate dielectrics under constant voltage stress

Solid-State Electronics, 47(1), 71–76.

By: Y. Lee, Y. Wu, C. Bae, J. Hong & G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

2003 | journal article

A new approach for calculating the electronic structure and vibrational properties of non-crystalline solids: Effective charges for infrared-active normal mode vibrations in oxide and chalcogenide materials

Journal of Non-Crystalline Solids, 326(2003 Oct 1), 14-.

By: G. Lucovsky, L. Sremaniak, T. Mowrer & J. Whitten

Source: NC State University Libraries
Added: August 6, 2018

2002 | journal article

Amorphous morphology, thermal stability and electronic structure of non-crystalline transition-metal elemental and binary oxides, and chalcogenides

Journal of Non-Crystalline Solids, 299(2002 Apr 1), 231–237.

By: G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

2002 | journal article

Characterization of charge-carrier dynamics in thin oxide layers on silicon by second harmonic generation

Physical Review. B, Condensed Matter and Materials Physics, 65(19), 193103–1.

By: Y. Glinka, W. Wang, S. Singh, Z. Marka, S. Rashkeev, Y. Shirokaya, R. Albridge, S. Pantelides, N. Tolk, G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

2002 | journal article

Correlations between electronic structure of transition metal atoms and performance of high-k gate dielectrics in advanced Si devices

Journal of Non-Crystalline Solids, 303(1), 40–49.

By: G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

2002 | journal article

Dielectric functions and optical bandgaps of high-K dielectrics for metal-oxide-semiconductor field-effect transistors by far ultraviolet spectroscopic ellipsometry

Journal of Applied Physics, 91(7), 4500–4505.

By: S. Lim, S. Kriventsov, T. Jackson, J. Haeni, D. Schlom, A. Balbashov, R. Uecker, P. Reiche, J. Freeouf, G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

2002 | journal article

Electron trapping in non-crystalline Ta- and Hf-aluminates for gate dielectric applications in aggressively scaled silicon devices

Solid-State Electronics, 46(11), 1799–1805.

By: R. Johnson, J. Hong, C. Hinkle & G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

2002 | journal article

Electron trapping in noncrystalline remote plasma deposited Hf- aluminate alloys for gate dielectric applications

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 20(3), 1126–1131.

By: R. Johnson, J. Hong, C. Hinkle & G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

2002 | journal article

Electronic states at the interface of Ti-Si oxide on Si(100)

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 20(4), 1726–1731.

By: C. Fulton, G. Lucovsky & R. Nemanich

Source: NC State University Libraries
Added: August 6, 2018

2002 | journal article

Electronic structure of SiO2: Charge redistribution contributions to the dynamic dipoles/effective charges of the infrared active normal modes

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 20(4), 1710–1719.

By: J. Whitten, Y. Zhang, M. Menon & G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

2002 | journal article

Electronic structure of high-k transition metal oxides and their silicate and aluminate alloys

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 20(4), 1739–1747.

By: G. Lucovsky, Y. Zhang, G. Rayner, G. Appel, H. Ade & J. Whitten

Source: NC State University Libraries
Added: August 6, 2018

2002 | journal article

Fixed charge and interface traps at heterovalent interfaces between Si(100) and non-crystalline Al2O3-Ta2O5 alloys

Applied Surface Science, 190(1-4), 43–47.

By: R. Johnson, G. Lucovsky & J. Hong

Source: NC State University Libraries
Added: August 6, 2018

2002 | journal article

Interface electronic structure of Ta2O5-Al2O3 alloys for Si- field-effect transistor gate dielectric applications

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 20(4), 1732–1738.

By: M. Ulrich, R. Johnson, J. Hong, J. Rowe, G. Lucovsky, J. Quinton, T. Madey

Source: NC State University Libraries
Added: August 6, 2018

2002 | journal article

Issues in high-kappa gate stack interfaces

MRS Bulletin, 27(3), 212–216.

By: V. Misra, G. Lucovsky & G. Parsons

Source: NC State University Libraries
Added: August 6, 2018

2002 | journal article

Long-term reliability degradation of ultrathin dielectric films due to heavy-ion irradiation

IEEE Transactions on Nuclear Science, 49(6), 3045–3050.

By: B. Choi, D. Fleetwood, R. Schrimpf, L. Massengill, K. Galloway, M. Shaneyfelt, T. Meisenheimer, P. Dodd ...

Source: NC State University Libraries
Added: August 6, 2018

2002 | journal article

Low-temperature Ar/N-2 remote plasma nitridation of SiO2 thin films

Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 20(6), 1989–1996.

By: A. Khandelwal, H. Niimi, G. Lucovsky & H. Lamb

Source: NC State University Libraries
Added: August 6, 2018

2002 | journal article

Nonlinear composition dependence of x-ray photoelectron spectroscopy and Auger electron spectroscopy features in plasma-deposited zirconium silicate alloy thin films

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 20(4), 1748–1758.

By: G. Rayner, D. Kang, Y. Zhang & G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

2002 | journal article

Origins of silicon solar cell passivation by SiNx: H anneal

Journal of Non-Crystalline Solids, 299(2002 Apr 1), 1157–1161.

By: C. Boehme & G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

2002 | journal article

Reliability degradation of ultra-thin oxynitride and Al2O3 gate dielectric films owing to heavy-ion irradiation

Electronics Letters, 38(4), 157–158.

By: B. Choi, D. Fleetwood, L. Massengill, R. Schrimpf, K. Galloway, M. Shaneyfelt, T. Meisenheimer, P. Dodd ...

Source: NC State University Libraries
Added: August 6, 2018

2002 | journal article

Simplified bond-hyperpolarizability model of second harmonic generation: Application to Si-dielectric interfaces

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 20(4), 1699–1705.

By: J. Wang, G. Powell, R. Johnson, G. Lucovsky & D. Aspnes

Source: NC State University Libraries
Added: August 6, 2018

2002 | journal article

Total-dose radiation response of hafnium-silicate capacitors

IEEE Transactions on Nuclear Science, 49(6), 3191–3196.

By: J. Felix, D. Fleetwood, R. Schrimpf, J. Hong, G. Lucovsky, J. Schwank, M. Shaneyfelt

Source: NC State University Libraries
Added: August 6, 2018

2002 | journal article

Vertically scaled MOSFET gate stacks and junctions: How far are we likely to go?

IBM Journal of Research and Development, 46(2-3), 299–315.

By: C. Osburn, I. Kim, S. Han, I. De, K. Yee, S. Gannavaram, S. Lee, C. Lee ...

Source: NC State University Libraries
Added: August 6, 2018

2002 | journal article

Voltage- and temperature-dependent gate capacitance and current model: Application to ZrO2 n-channel MOS capacitor

IEEE Transactions on Electron Devices, 49(11), 1969–1978.

By: Y. Fan, R. Nieh, J. Lee, G. Lucovsky, G. Brown, L. Register, S. Banerjee

Source: NC State University Libraries
Added: August 6, 2018

2002 | journal article

A molecular orbital model for the electronic structure of transition metal atoms in silcate and aluminate alloys

Applied Surface Science, 190(1-4), 48–55.

By: G. Lucovsky, J. Whitten & Y. Zhang

Source: NC State University Libraries
Added: August 6, 2018

2002 | journal article

A molecular orbital model for the electronic structure of transition metal atoms in silicate and aluminate alloys

Solid-State Electronics, 46(11), 1687–1697.

By: G. Lucovsky, J. Whitten & Y. Zhang

Source: NC State University Libraries
Added: August 6, 2018

2001 | journal article

Characteristics of metalorganic remote plasma chemical vapor deposited Al2O3 gate stacks on SiC metal-oxide-semiconductor devices

Applied Physics Letters, 79(7), 973–975.

By: H. Lazar, V. Misra, R. Johnson & G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

2001 | journal article

Chemical and physical limits on the performance of metal silicate high-k gate dielectrics

Microelectronics Reliability, 41(7), 937–945.

By: G. Lucovsky, G. Rayner & R. Johnson

Source: NC State University Libraries
Added: August 6, 2018

2001 | journal article

Dissociation reactions of hydrogen in remote plasma-enhanced chemical-vapor-deposition silicon nitride

Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 19(5), 2622–2628.

By: C. Boehme & G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

2001 | journal article

Electron traps at interfaces between Si(100) and noncrystalline Al2O3, Ta2O5, and (Ta2O5)(x)(Al2O3)(1-x) alloys

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 19(4), 1606–1610.

By: R. Johnson, J. Hong & G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

2001 | journal article

Electronic structure of noncrystalline transition metal silicate and aluminate alloys

Applied Physics Letters, 79(12), 1775–1777.

Source: NC State University Libraries
Added: August 6, 2018

2001 | journal article

Electronic structure, amorphous morphology and thermal stability of transition metal oxide and chalcogenide alloys

Journal of Optoelectronics and Advanced Materials, 3(2), 155–166.

By: G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

2001 | journal article

Fixed charge and interface traps at heterovalent interfaces between Si(100) and non-crystalline Al2O3-Ta2O5 alloys

Microelectronic Engineering, 59(1-4), 385–391.

By: R. Johnson, G. Lucovsky & J. Hong

Source: NC State University Libraries
Added: August 6, 2018

2001 | journal article

Heavy-ion-induced breakdown in ultra-thin gate oxides and high- k dielectrics

IEEE Transactions on Nuclear Science, 48(6), 1904–1912.

By: L. Massengill, B. Choi, D. Fleetwood, R. Schrimpf, K. Galloway, M. Shaneyfelt, T. Meisenheimer, P. Dodd ...

Source: NC State University Libraries
Added: August 6, 2018

2001 | journal article

Physical and electrical properties of noncrystalline Al2O3 prepared by remote plasma enhanced chemical vapor deposition

Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 19(4), 1353–1360.

By: R. Johnson, G. Lucovsky & I. Baumvol

Source: NC State University Libraries
Added: August 6, 2018

2001 | journal article

Reaction pathways in remote plasma nitridation of ultrathin SiO2 films

Journal of Applied Physics, 91(1), 48–55.

By: H. Niimi, A. Khandelwal, H. Lamb & G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

2001 | journal article

Transition from thermally grown gate dielectrics to deposited gate dielectrics for advanced silicon devices: A classification scheme based on bond ionicity

Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 19(4), 1553–1561.

By: G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

2001 | journal article

A molecular orbital model for the electronic structure of transition metal atoms in silicate and aluminate alloys

Microelectronic Engineering, 59(1-4), 329–334.

By: G. Lucovsky, J. Whitten & Y. Zhang

Source: NC State University Libraries
Added: August 6, 2018

2000 | journal article

1.6 nm oxide equivalent gate dielectrics using nitride/oxide (N/O) composites prepared by RPECVD/oxidation process

IEEE Electron Device Letters, 21(3), 116–118.

By: Y. Wu, Y. Lee & G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

2000 | journal article

Application of constraint theory to Si-dielectric interfaces in a-Si: H and poly-Si thin film transistors (TFTs)

Journal of Non-Crystalline Solids, 266(2000 May), 1335–1339.

By: G. Lucovsky & J. Phillips

Source: NC State University Libraries
Added: August 6, 2018

2000 | journal article

Barrier layer model determined by XPS data for tunneling current reductions at monolayer nitrided Si-SiO2 interfaces

Applied Surface Science, 166(1-4), 485–491.

By: H. Niimi, H. Yang, G. Lucovsky, J. Keister & J. Rowe

Source: NC State University Libraries
Added: August 6, 2018

2000 | journal article

Charge redistribution at GaN-Ga2O3 interfaces: a microscopic mechanism for low defect density interfaces in remote-plasma- processed MOS devices prepared on polar GaN faces

Applied Surface Science, 166(1-4), 513–519.

By: R. Therrien, G. Lucovsky & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2000 | journal article

Depth-resolved detection and process dependence of traps at ultrathin plasma-oxidized and deposited SiO2/Si interfaces

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 18(3), 1737–1741.

By: L. Brillson, A. Young, B. White, J. Schafer, H. Niimi, Y. Lee, G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

2000 | journal article

Formation of nano-crystalline Si by thermal annealing of SiOx, SiCx and SiOyCx amorphous alloys: model systems for advanced device processing

Journal of Non-Crystalline Solids, 266(2000 May), 1009–1014.

By: D. Wolfe & G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

2000 | journal article

H loss mechanism during anneal of silicon nitride: Chemical dissociation

Journal of Applied Physics, 88(10), 6055–6059.

By: C. Boehme & G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

2000 | journal article

Independent interface and bulk film contributions to reduction of tunneling currents in stacked oxide/nitride gate dielectrics with monolayer nitrided interfaces

Applied Surface Science, 159(2000 June), 50–61.

By: G. Lucovsky, H. Niimi, Y. Wu & H. Yang

Source: NC State University Libraries
Added: August 6, 2018

2000 | journal article

Intrinsic limitations on device performance and reliability from bond-constraint induced transition regions at interfaces of stacked dielectrics

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 18(3), 1742–1748.

By: G. Lucovsky, H. Yang, H. Niimi, J. Keister, J. Rowe, M. Thorpe, J. Phillips

Source: NC State University Libraries
Added: August 6, 2018

2000 | journal article

Intrinsic limitations on ultimate device performance and reliability at (i) semiconductor-dielectric interfaces and (ii) internal interfaces in stacked dielectrics

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 18(4), 2179–2186.

By: G. Lucovsky, H. Yang, H. Niimi, M. Thorpe & J. Phillips

Source: NC State University Libraries
Added: August 6, 2018

2000 | journal article

Limitations for aggressively scaled CMOS Si devices due to bond coordination constraints and reduced band offset energies at Si-high-k dielectric interfaces

Applied Surface Science, 166(1-4), 497–503.

By: G. Lucovsky & J. Phillips

Source: NC State University Libraries
Added: August 6, 2018

2000 | journal article

Low energy electron-excited nanoscale luminescence: A tool to detect trap activation by ionizing radiation

IEEE Transactions on Nuclear Science, 47(6), 2276–2280.

By: B. White, L. Brillson, S. Lee, D. Fleetwood, R. Schrimpf, S. Pantelides, Y. Lee, G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

2000 | journal article

Microscopic model for enhanced dielectric constants in low concentration SiO2-rich noncrystalline Zr and Hf silicate alloys

Applied Physics Letters, 77(18), 2912–2914.

By: G. Lucovsky & G. Rayner

Source: NC State University Libraries
Added: August 6, 2018

2000 | journal article

New approach for the fabrication of device-quality Ge/GeO2/SiO2 interfaces using low temperature remote plasma processing

Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 18(4), 1230–1233.

By: R. Johnson, H. Niimi & G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

2000 | journal article

Plasma processed ultra-thin SiO2 interfaces far advanced silicon NMOS and PMOS devices: applications to Si-oxide Si oxynitride, Si-oxide Si nitride and Si-oxide transition metal oxide stacked gate dielectrics

Thin Solid Films, 374(2), 217–227.

By: G. Lucovsky, H. Yang, Y. Wu & H. Niimi

Source: NC State University Libraries
Added: August 6, 2018

2000 | journal article

Separate and independent reductions in direct tunneling in oxide/nitride stacks with monolayer interface nitridation associated with the (i) interface nitridation and (ii) increased physical thickness

Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 18(4), 1163–1168.

By: G. Lucovsky, Y. Wu, H. Niimi, H. Yang, J. Keister & J. Rowe

Source: NC State University Libraries
Added: August 6, 2018

2000 | journal article

Time-dependent dielectric wearout technique with temperature effect for reliability test of ultrathin (< 2.0 nm) single layer and dual layer gate oxides

Time-dependent dielectric wearout technique with temperature effect for reliability test of ultrathin (< 2.0 nm) single layer and dual layer gate oxides. Microelectronics Reliability, 40(12), 1987–1995.

By: Y. Wu, Q. Xiang, J. Yang, G. Lucovsky & M. Lin

Source: NC State University Libraries
Added: August 6, 2018

2000 | journal article

The effects of interfacial sub-oxide transition regions and monolayer level nitridation on tunneling currents in silicon devices

IEEE Electron Device Letters, 21(2), 76–78.

By: H. Yang, H. Niimi, J. Keister & G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

2000 | journal article

The performance and reliability of PMOSFET's with ultrathin silicon nitride/oxide stacked gate dielectrics with nitrided Si-SiO2 interfaces prepared by remote plasma enhanced CVD and post-deposition rapid thermal annealing

IEEE Transactions on Electron Devices, 47(7), 1361–1369.

By: Y. Wu, G. Lucovsky & Y. Lee

Source: NC State University Libraries
Added: August 6, 2018

1999 | journal article

Band offsets for ultrathin SiO2 and Si3N4 films on Si(111) and Si(100) from photoemission spectroscopy

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 17(4), 1831–1835.

By: J. Keister, J. Rowe, J. Kolodziej, H. Niimi, T. Madey & G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

1999 | journal article

Bonding constraint-induced defect formation at Si-dielectric interfaces and internal interfaces in dual-layer gate dielectrics

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 17(4), 1806–1812.

By: G. Lucovsky, Y. Wu, H. Niimi, V. Misra & J. Phillips

Source: NC State University Libraries
Added: August 6, 2018

1999 | journal article

Bonding constraints and defect formation at interfaces between crystalline silicon and advanced single layer and composite gate dielectrics

Applied Physics Letters, 74(14), 2005–2007.

By: G. Lucovsky, Y. Wu, H. Niimi, V. Misra & J. Phillips

Source: NC State University Libraries
Added: August 6, 2018

1999 | journal article

Cathodoluminescence spectroscopy of nitrided SiO2-Si interfaces

Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 17(4), 1258–1262.

By: A. Young, R. Bandhu, J. Schafer, H. Niimi & G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

1999 | journal article

Charge redistribution at GaN-Ga2O3 interfaces: A microscopic mechanism for low defect density interfaces in remote plasma processed MOS devices prepared on polar GaN faces

Microelectronic Engineering, 48(1-4), 303–306.

By: R. Therrien, H. Niimi, T. Gehrke, G. Lucovsky & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1999 | journal article

Charge redistribution at GaN-Ga2O3 interfaces: A microscopic mechanism for low defect density interfaces in remote plasma processed MOS devices prepared on polar GaN faces

Physica Status Solidi. A, Applications and Materials Science, 176(1), 793–796.

By: R. Therrien, G. Lucovsky & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1999 | journal article

Improvement of gate dielectric reliability for P plus poly Mos devices using remote pecvd top nitride deposition ultra-thin(2.4-6 Nm) gate oxides

Microelectronics Reliability, 39(3), 365–372.

By: Y. Wu & G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

1999 | journal article

Interfacial properties of ultrathin pure silicon nitride formed by remote plasma enhanced chemical vapor deposition

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 17(4), 1836–1839.

By: V. Misra, H. Lazar, Z. Wang, Y. Wu, H. Niimi, G. Lucovsky, J. Wortman, J. Hauser

Source: NC State University Libraries
Added: August 6, 2018

1999 | journal article

Monolayer-level controlled incorporation of nitrogen at Si-SiO2 interfaces using remote plasma processing

Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 17(6), 3185–3196.

By: H. Niimi & G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

1999 | journal article

Monolayer-level controlled incorporation of nitrogen in ultrathin gate dielectrics using remote plasma processing: Formation of stacked 'N-O-N' gate dielectrics

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 17(6), 2610–2621.

By: H. Niimi & G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

1999 | journal article

Reaction/annealing pathways for forming ultrathin silicon nitride films for composite oxide-nitride gate dielectrics with nitrided crystalline silicon-dielectric interfaces for application in advanced complementary metal-oxide-semiconductor devices

Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 17(4), 1340–1351.

By: G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

1999 | journal article

Silicon oxide/silicon nitride dual-layer films: A stacked gate dielectric for the 21st century

Journal of Non-Crystalline Solids, 254(1999 Sept. 1), 26–37.

By: G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

1999 | journal article

Stability of Si-O-F low-K dielectrics: Attack by water molecules as function of near-neighbor Si-F bonding arrangements

Journal of Non-Crystalline Solids, 254(1999 Sept.1), 128–133.

By: H. Yang & G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

1999 | journal article

Structure of ultrathin SiO2/Si(111) interfaces studied by photoelectron spectroscopy

Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 17(4), 1250–1257.

By: J. Keister, J. Rowe, J. Kolodziej, H. Niimi, H. Tao, T. Madey, G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

1999 | journal article

Suppression of boron transport out of p(+) polycrystalline silicon at polycrystalline silicon dielectric interfaces

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 17(4), 1813–1822.

By: Y. Wu, H. Niimi, H. Yang, G. Lucovsky & R. Fair

Source: NC State University Libraries
Added: August 6, 2018

1999 | journal article

Thermochemical stability of silicon-oxygen-carbon alloy thin films: A model system for chemical and structural relaxation at SiC-SiO2 interfaces

Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 17(4), 2170–2177.

By: D. Wolfe, B. Hinds, F. Wang, G. Lucovsky, B. Ward, M. Xu, R. Nemanich, D. Maher

Source: NC State University Libraries
Added: August 6, 2018

1999 | journal article

Time dependent dielectric wearout (TDDW) technique for reliability of ultrathin gate oxides

IEEE Electron Device Letters, 20(6), 262–264.

By: Y. Wu, Q. Xiang, D. Bang, G. Lucovsky & M. Lin

Source: NC State University Libraries
Added: August 6, 2018

1999 | journal article

Ultrathin nitrided gate dielectrics: Plasma processing, chemical characterization, performance, and reliability

IBM Journal of Research and Development, 43(3), 301–326.

By: G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

1999 | journal article

The effects of chemical bonding and band offset constraints at Si-dielectric interfaces on the integration of alternative high-K dielectrics into aggressively-scaled CMOS Si devices

Microelectronic Engineering, 48(1-4), 291–294.

By: G. Lucovsky & J. Phillips

Source: NC State University Libraries
Added: August 6, 2018

1999 | journal article

The effects of interfacial suboxide transition regions on direct tunneling in oxide and stacked oxide-nitride gate dielectrics

Microelectronic Engineering, 48(1-4), 307–310.

By: H. Yang, H. Niimi, Y. Wu, G. Lucovsky, J. Keister & J. Rowe

Source: NC State University Libraries
Added: August 6, 2018

1998 | journal article

Atomic structure and thermal stability of silicon suboxides in bulk thin films and in transition regions at Si-SiO2 interfaces

Journal of Non-Crystalline Solids, 230 (part A)(1998 May), 1–14.

By: G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

1998 | journal article

Cathodoluminescence measurements of suboxide band-tail and Si dangling bond states at ultrathin Si-SiO2 interfaces

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 16(4), 2177–2181.

By: A. Young, J. Schafer, G. Jessen, R. Bandhu, L. Brillson, G. Lucovsky, H. Niimi

Source: NC State University Libraries
Added: August 6, 2018

1998 | journal article

Controlled nitrogen incorporation at Si-SiO2 interfaces by remote plasma-assisted processing

Japanese Journal of Applied Physics. Part 1, Regular Papers, Short Notes & Review Papers, 37(2), 709–714.

By: K. Koh, H. Niimi, G. Lucovsky & M. Green

Source: NC State University Libraries
Added: August 6, 2018

1998 | journal article

Coupled electron-hole dynamics at the Si/SiO2 interface

Physical Review Letters, 81(19), 4224–4227.

By: W. Wang, G. Lupke, M. Di Ventra, S. Pantelides, J. Gilligan, N. Tolk, I. Kizilyalli, P. Roy, G. Margaritondo, G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

1998 | journal article

Depth-dependent spectroscopic defect characterization of the interface between plasma-deposited SiO2 and silicon

Applied Physics Letters, 73(6), 791–793.

By: J. Schafer, A. Young, L. Brillson, H. Niimi & G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

1998 | journal article

Differences between silicon oxycarbide regions at SiC-SiO2 prepared by plasma-assisted oxidation and thermal oxidations

Applied Surface Science, 123(1998 Jan.), 435–439.

By: G. Lucovsky, H. Niimi, A. Golz & H. Kurz

Source: NC State University Libraries
Added: August 6, 2018

1998 | journal article

Heterointerface dipoles: Applications to (a) Si-SiO2, (b) nitrided Si-N-SiO2, and (c) SiC-SiO2 interfaces

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 16(4), 2191–2198.

By: G. Lucovsky, H. Yang & H. Massoud

Source: NC State University Libraries
Added: August 6, 2018

1998 | journal article

Interface electronic transition observed by optical second-harmonic spectroscopy in beta-GaN/GaAs(001) heterostructures

Physical Review. B, Condensed Matter and Materials Physics, 57(7), 3722–3725.

By: G. Lupke, O. Busch, C. Meyer, H. Kurz, O. Brandt, H. Yang, A. Trampert, K. Ploog, G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

1998 | journal article

Interface formation and thermal stability of advanced metal gate and ultrathin gate dielectric layers

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 16(4), 2154–2158.

By: B. Claflin & G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

1998 | journal article

Interface studies of tungsten nitride and titanium nitride composite metal gate electrodes with thin dielectric layers

Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 16(3 pt.2), 1757–1761.

By: B. Claflin, M. Binger & G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

1998 | journal article

Interfacial sub-oxide regions at Si-SiO2 interfaces: minimization by post-oxidation rapid thermal anneal

Applied Surface Science, 123(1998 Jan.), 490–495.

By: G. Lucovsky, K. Koh, B. Chaflin & B. Hinds

Source: NC State University Libraries
Added: August 6, 2018

1998 | journal article

Investigation of postoxidation thermal treatments of Si/SiO2 interface in relationship to the kinetics of amorphous Si suboxide decomposition

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 16(4), 2171–2176.

By: B. Hinds, F. Wang, D. Wolfe, C. Hinkle & G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

1998 | journal article

Low-temperature (<450 degrees C), plasma-assisted deposition of poly-Si thin films on SiO2 and glass through interface engineering (vol 15, pg 1035, 1997)

Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 16(1), 207.

By: D. Wolfe, F. Wang, S. Habermehl & G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

1998 | journal article

Minimization of dangling bond defects in hydrogenated silicon nitride dielectrics for thin film transistors (TFTs)

Journal of Non-Crystalline Solids, 230 (part B)(1998), 1221–1225.

By: G. Lucovsky & J. Phillips

Source: NC State University Libraries
Added: August 6, 2018

1998 | journal article

Modeled tunnel currents for high dielectric constant dielectrics

IEEE Transactions on Electron Devices, 45(6), 1350–1355.

By: E. Vogel, K. Ahmed, B. Hornung, W. Henson, P. McLarty, G. Lucovsky, J. Hauser, J. Wortman

Source: NC State University Libraries
Added: August 6, 2018

1998 | journal article

Monolayer incorporation of nitrogen at Si-SiO2 interfaces: Interface characterization and electrical properties

Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 16(1), 356–364.

By: G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

1998 | journal article

Monolayer nitrogen atom incorporation at buried Si SiO2 interfaces: preparation by remote plasma oxidation/nitridation and characterization by on line auger electron spectroscopy

Surface Review and Letters, 5(1), 167–173.

By: G. Lucovsky, H. Niimi, K. Koh & M. Green

Source: NC State University Libraries
Added: August 6, 2018

1998 | journal article

Optimization of nitrided gate dielectrics by plasma-assisted and rapid thermal processing

Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 16(3 pt.2), 1721–1729.

By: G. Lucovsky, H. Niimi, Y. Wu, C. Parker & J. Hauser

Source: NC State University Libraries
Added: August 6, 2018

1998 | journal article

Plasma-engineered Si-SiO2 interfaces: monolayer nitrogen atom incorporation by low-temperature remote plasma-assisted oxidation in N2O

Surface & Coatings Technology, 98(1-3), 1524–1528.

By: K. Koh, H. Niimi & G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

1998 | journal article

Reaction pathways for intrinsic and extrinsic defect metastability in light-soaked hydrogenated amorphous silicon - the Staebler-Wronski effect

Journal of Non-Crystalline Solids, 230 (part A)(1998 May), 281–286.

By: G. Lucovsky & H. Yang

Source: NC State University Libraries
Added: August 6, 2018

1998 | journal article

Stability of Si-O-F low-K dielectrics: Attack by water molecules as function of near-neighbor Si-F bonding arrangements

Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 16(3 (part 2), 1525–1528.

By: H. Yang & G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

1998 | journal article

Study of SiOx decomposition kinetics and formation of Si nanocrystals in an SiOx matrix

Journal of Non-Crystalline Solids, 230 (part A)(1998 May), 507–512.

By: B. Hinds, F. Wang, D. Wolfe, C. Hinkle & G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

1998 | journal article

Tunneling currents through ultrathin oxide/nitride dual layer gate dielectrics for advanced microelectronic devices

Journal of Applied Physics, 83(4), 2327–2337.

By: H. Yang, H. Niimi & G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

1998 | journal article

Ultrathin nitride/oxide (N/O) gate dielectrics for p(+)-polysilicon gated PMOSFET's prepared by a combined remote plasma enhanced CVD thermal oxidation process

IEEE Electron Device Letters, 19(10), 367–369.

By: Y. Wu & G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

1998 | journal article

Ultrathin oxide gate dielectrics prepared by low temperature remote plasma-assisted oxidation

Surface & Coatings Technology, 98(1-3), 1529–1533.

By: H. Niimi & G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

1998 | journal article

Ultrathin oxide-nitride gate dielectric MOSFET's

IEEE Electron Device Letters, 19(4), 106–108.

By: C. Parker, G. Lucovsky & J. Hauser

Source: NC State University Libraries
Added: August 6, 2018

1998 | journal article

A unified chemical bonding model for defect generation in a-SiH: Photo-induced defects in photovoltaic devices and current-induced defects in TFTs

Japanese Journal of Applied Physics. Part 1, Regular Papers, Short Notes & Review Papers, 37(3B), 1082–1090.

By: H. Yang & G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

1997 | journal article

Elimination of suboxide transition regions at Si-SiO(2) interfaces by rapid thermal annealing at 900 degrees C

Applied Surface Science, 117(1997 June), 202–206.

By: G. Lucovsky, A. Banerjee, H. Niimi, K. Koh, B. Hinds, C. Meyer, G. Lupke, H. Kurz

Source: NC State University Libraries
Added: August 6, 2018

1997 | journal article

Fluorine atom induced decreases to the contribution of infrared vibrations to the static dielectric constant of Si-O-F alloy films

Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 15(3 pt.1), 836–843.

By: G. Lucovsky & H. Yang

Source: NC State University Libraries
Added: August 6, 2018

1997 | journal article

Hydrogen atom participation in metastable defect formation at Si-SiO(2) interfaces

Applied Surface Science, 117(1997 June), 192–197.

By: G. Lucovsky, H. Yang, Z. Jing & J. Whitten

Source: NC State University Libraries
Added: August 6, 2018

1997 | journal article

Local atomic bonding in fluorinated silicon oxides: bond ionicity controlled contributions of infrared active vibrations to the static dielectric constant

Japanese Journal of Applied Physics. Part 1, Regular Papers, Short Notes & Review Papers, 36(3b), 1368–1373.

By: G. Lucovsky & H. Yang

Source: NC State University Libraries
Added: August 6, 2018

1997 | journal article

Local dipole field contributions to bond stretching silicon hydrogen vibrational modes on flat and vicinal Si(111) surfaces

Surface Review and Letters, 4(5), 891–896.

By: H. Yang & G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

1997 | conference paper

Low pH chemical etch route for smooth H-terminated Si(100) and study of subsequent chemical stability

In Environmental, safety, and health issues in IC production: Symposium held December 4-5, 1996, Boston, Massachusetts, U.S.A. (Materials Research Society Symposium proceedings, no. 447) (pp. 191–196). Pittsburgh, PA: Materials Research Society.

By: B. Hinds, D. Aspenes & G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

1997 | journal article

Low-temperature (less than 450 degrees), plasma-assisted deposition of poly-si thin films on SiO(2) and glass through interface engineering

Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 15(3 pt. 1), 1035–1040.

By: D. Wolfe, F. Wang & G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

1997 | journal article

Minimization of suboxide transition regions at Si-SiO2 interfaces by 900 degrees C rapid thermal annealing

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 15(4), 1074–1079.

By: G. Lucovsky, A. Banerjee, B. Hinds, B. Claflin, K. Koh & H. Yang

Source: NC State University Libraries
Added: August 6, 2018

1997 | journal article

Plasma-assisted formation of low defect density SiC-SiO2 interfaces

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 15(4), 1097–1104.

By: A. Golz, G. Lucovsky, K. Koh, D. Wolfe, H. Niimi & H. Kurz

Source: NC State University Libraries
Added: August 6, 2018

1997 | journal article

Ultra-thin gate dielectrics prepared by low-temperature remote plasma-assisted oxidation

Nuclear Instruments & Methods in Physics Research. Section B, Beam Interactions With Materials and Atoms, 127(1997 May), 364–368.

By: H. Niimi, K. Koh & G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

1997 | journal article

The role of hydrogen atoms in metastable defect formation at Si-SiO2 interfaces and in hydrogenated amorphous Si (a-Si:H)

Physica Status Solidi. A, Applications and Materials Science, 159(1997), 5–10.

By: G. Lucovsky, H. Yang, Z. Jing & J. Whitten

Source: NC State University Libraries
Added: August 6, 2018

1993 | journal article

Center for Advanced Electronic Materials Processing

Proceedings of the IEEE, 81(1), 42–59.

By: N. Masnari, J. Hauser, G. Lucovsky, D. Maher, R. Markunas, M. Ozturk, J. Wortman

Source: NC State University Libraries
Added: August 6, 2018

1993 | journal article

Femtosecond spectroscopic study of ultrafast carrier relaxation in hydrogenated amorphous silicon a-Si:H

Journal of Applied Physics, 73, 1235.

By: A. Esser, K. H., W. H., P. C., . G.N. & G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

1993 | patent

Method for determining interface properties of semiconductor materials by photoreflectance

Washington, DC: U.S. Patent and Trademark Office.

By: F. Pollack, H. Shen & G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

1993 | journal article

Optical-detection of photoconductivity in hydrogenated amorphous silicon, a-Si:H, in the subpicosecond time-domain

Journal of Non-Crystalline Solids, 166, 575–578.

By: E. Kurz H., L. Heesel H., . Wang C. & P. G.

Source: NC State University Libraries
Added: August 6, 2018

1993 | journal article

Transport processes of optically generated free carriers in amorphous silicon, a-Si:H in the femtosecond time regime

Physical Review, B(47), 3593.

By: A. Esser, K. H., W. H., P. C., . G.N. & G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

1990 | journal article

Annealing of intrinsic and photo-induced defects in hydrogenated amorphous silicon

Thin Solid Films, 193/194, 577–587.

By: G. Parsons, C. Wang & G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

1990 | journal article

Post-deposition relaxation of electronic defects in hydrogenated amorphous silicon

Applied Physics Letters, 56, 1895–1897.

By: G. Parsons, C. Wang & G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

1990 | journal article

Silicon-hydrogen bond-stretching vibrations in hydrogenated amorphous silicon, nitrogen alloys

Physical Review, B(41), 1664–1667.

By: G. Parsons & G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

1990 | journal article

Ultrafast recombination and trapping in amorphous silicon

Physical Review, B(41), 2879–2884.

By: A. Esser, K. Seibert, H. Kurz, G. Parsons, C. Wang, B. Davidson, G. Lucovsky, R. Nemanich

Source: NC State University Libraries
Added: August 6, 2018

1989 | journal article

Defects in a-Si:H films produced by remote plasma enhanced CVD

Journal of Non-Crystalline Solids, 107, 295–300.

By: G. Parsons, T. Tsu & G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

1989 | journal article

Dependence of the chemical, electrical and photoelectronic properties of a-Si:H/Si3N4 interfaces on the deposition sequence

Journal of Non-Cyrstalline Solids, 114.

By: S. Kim, G. Parsons & G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

1989 | journal article

Effects of the nearest neighbors and the alloy matrix on sih stretching vibrations in the amorphous sior-h (0-less-than-r-less-than-2) alloy system

Physical Review. B, Condensed Matter and Materials Physics, 40(3), 1795–1805.

By: D. Tsu, G. Lucovsky & B. Davidson

Source: NC State University Libraries
Added: August 6, 2018

1989 | journal article

Mass and optical emission spectroscopic studies of the gas phase during the deposition of SiO2 and a-Si:H by remote plasma enhanced chemical vapor deposition

Journal of Vacuum Science & Technology, A(7), 1115–1123.

By: D. Tsu, G. Parsons, G. Lucovsky & M. Watkins

Source: NC State University Libraries
Added: August 6, 2018

1989 | journal article

Precursors for the deposition of amorphous silicon hydrogen alloys by remote plasma enhanced CVD

Journal of Vacuum Science & Technology, A(7), 1124–1129.

By: G. Parsons, D. Tsu, C. Wang & G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

1989 | journal article

Reduction of defects by high temperature (180 degrees c-240 degrees c) annealing in room temperature deposited hydrogenated amorphous silicon

Journal of Non-Crystalline Solids, 114.

By: G. Parsons, C. Wang & G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

1988 | journal article

Properties of intrinsic and doped a-Si:H deposited by remote plasma enhanced chemical vapor deposition

Journal of Vacuum Science & Technology, A(6), 1912–1916.

By: G. Parsons, D. Tsu & G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

1988 | journal article

Raman-scattering characterization of carbon bonding in diamond and diamondlike thin-films

Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 6(3), 1783–1787.

By: R. Nemanich, J. Glass, G. Lucovsky & R. Shroder

Source: NC State University Libraries
Added: August 6, 2018

1988 | journal article

Spectroscopic emission studies of O2/He and N2/He plasmas in remote plasma enhanced chemical vapor deposition

Journal of Vacuum Science & Technology, A(6), 1849–1854.

By: D. Tsu, G. Parsons & G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

1987 | journal article

Low-temperature growth of silicon dioxide films - a study of chemical bonding by ellipsometry and infrared-spectroscopy

Journal of Vacuum Science & Technology. B, Microelectronics Processing and Phenomena, 5(2), 530–537.

By: G. Lucovsky, M. Manitini, J. Srivastava & E. Irene

Source: NC State University Libraries
Added: August 6, 2018

1987 | journal article

Optical and electrical properties of a-Si:H films grown by remote plasma enhanced chemical vapor deposition

Journal of Non-Crystalline Solids, 97 & 98, 1375–1378.

By: G. Parsons, D. Tsu & G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

1987 | journal article

Photoelectronic properties of a-Si:H and a-Ge:H thin films in surface cell structures

Journal of Vacuum Science & Technology, A(5), 1655–1660.

By: G. Parsons, C. Kusano & G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

1986 | journal article

Deposition of a-Si,Sn:H alloy films by reactive magnetron sputtering from separate Si and Sn targets

Journal of Vacuum Science & Technology, A(4), 470–474.

By: G. Parsons, J. Cook, G. Lucovsky, S. Lin & M. Mantini

Source: NC State University Libraries
Added: August 6, 2018

1986 | journal article

Infrared spectroscopic study of siox films produced by plasma enhanced chemical vapor-deposition

Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 4(3), 689–694.

By: P. Pai, S. Chao, Y. Takagi & G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

1985 | journal article

Hydrogen localization near boron in silicon

Applied Physics Letters, 46(4), 421–423.

By: J. Pankove, P. Zanzucchi, C. Magee & G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

1985 | journal article

Low defect density Si,Ge:H alloy films produced by magnetron sputtering from separate Si and Ge cathodes

Journal of Non-Crystalline Solids, 77 & 78, 885–889.

By: R. Rudder, G. Parsons, J. Cook & G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018