Gerald Lucovsky

Multipactor Coating for Sapphire RF Windows Using Remote Plasma-Assisted Deposition

IEEE TRANSACTIONS ON PLASMA SCIENCE, 43(8), 2571–2580.

Band-edge electronic structure and pre-existing defects in remote plasma deposited non-crystalline SiO2 and GeO2

Japanese Journal of Applied Physics, 52(4).

Band-edge electronic structures, and pre-existing defects in remote plasma deposited (RPD) non-crystalline (nc-) SiO2 and GeO2

Lucovsky, G. (2013, May). SOLID-STATE ELECTRONICS, Vol. 83, pp. 30–36.

Ligand field splittings in core level transitions for transition metal (TM) oxides: Tanabe-Sugano diagrams and (TM) dangling bonds in vacated O-atom defects

Xxist international symposium on the jahn-teller effect 2012, 428.

Nano-scale order in hydrogenated amorphous silicon a-Si,H and doped a-Si(H) defect reduction for device applications

2013 14th international conference on ultimate integration on silicon (ulis), 217–220.

Noncrystalline SiO2 and GeO2: Process induced pre-existing defects and vacated O-atom intrinsic bonding sites

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 31(1).

Process induced pre-existing defects in non-crystalline SiO2 and GeO2 at vacated O-atom bonding sites and comparisons with Ge-S(Se) alloy bonding sites

XXIST INTERNATIONAL SYMPOSIUM ON THE JAHN-TELLER EFFECT 2012, Vol. 428.

Qualitative and quantitative differences between non-crystalline and nano-crystalline oxides in device technologies

2013 14th international conference on ultimate integration on silicon (ulis), 174–177.

Remote plasma-processing (RPP), medium range order, and precursor sites for dangling bond defects in "amorphous-Si(H)" alloys: Photovoltaic and thin film transistor devices

SURFACE & COATINGS TECHNOLOGY, 242, 183–186.

Spectroscopic Detection of Medium Range Order in Device Grade Hydrogenated Amorphous Silicon

JAPANESE JOURNAL OF APPLIED PHYSICS, 52(4).

Transport through singlet states in resistive memory materials: Magneli-phase, TinO2n-1 for 9 >= n > 3, and TiO2-HfO2 alloys

Transport through singlet states in resistive memory materials: Magneli-phase, TinO2n-1 for 9 >= n > 3, and TiO2-HfO2 alloys. Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 31(1).

O-Vacancies in (i) Nano-Crystalline HfO2 and (i) Non-Crystalline SiO2 and Si3N4 Studied by X-ray Absorption Spectroscopy

Lucovsky, G., Miotti, L., & Bastos, K. P. (2012, June). JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, Vol. 12, pp. 4811–4819.

Spectroscopic Detection of Hopping Induced Mixed Valence for Ti and Sc in GdSc1-xTixO3 for x > 0.165

Lucovsky, G., Miotti, L., Bastos, K. P., Adamo, C., & Schlom, D. G. (2012, June). Spectroscopic Detection of Hopping Induced Mixed Valence for Ti and Sc in GdSc1-xTixO3 for x > 0.165. JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, Vol. 12, pp. 4749–4756.

Bond-specific reaction kinetics during the oxidation of (111) Si: Effect of n-type doping

Applied Physics Letters, 98(2).

Characterizing the effects of etch-induced material modification on the crystallization properties of nitrogen doped Ge2Sb2Te5

JOURNAL OF APPLIED PHYSICS, 109(3).

Intermixing between HfO2 and GeO2 films deposited on Ge(001) and Si(001): Role of the substrate

APPLIED PHYSICS LETTERS, 98(13).

Many-Electron Multiplet Theory Applied to O-Vacancies in (i) Nanocrystalline HfO2 and (ii) Non-crystalline SiO2 and Si Oxynitride Alloys

VIBRONIC INTERACTIONS AND THE JAHN-TELLER EFFECT: THEORY AND APPLICATIONS, Vol. 23, pp. 193–211.

Many-electron multiplet theory applied to o-atom vacancies in high-k dielectrics

Japanese Journal of Applied Physics. Part 1, Regular Papers, Short Notes & Review Papers, 50(4).

Multiplet theory for conduction band edge and O-Vacancy defect states in SiO2, Si3N4, and Si oxynitride alloy thin films

Japanese Journal of Applied Physics. Part 1, Regular Papers, Short Notes & Review Papers, 50(4).

Nanoscale depth-resolved electronic properties of SiO2/SiOx/SiO2 for device-tolerant electronics

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 29(1).

Non-crystalline SiO(2): processing induced pre-existing defects associated with vacated O-atom intrinsic bonding sites

Journal of Optoelectronics and Advanced Materials, 13(11-12), 1359–1363.

O-vacancies in (i) nanocrystalline HfO2 and (i) noncrystalline SiO2 and Si3N4 studied by x-ray absorption spectroscopy

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 29(1).

O-vacancies in transition metal (TM) oxides: Coordination and local site symmetry of transition and negative ion states in TM2O3 and TMO2 oxides

Microelectronic Engineering, 88(7), 1471–1474.

Radiation effects in new materials for nano-devices (invited)

Schrimpf, R. D., Fleetwood, D. M., Alles, M. L., Reed, R. A., Lucovsky, G., & Pantelides, S. T. (2011, July). MICROELECTRONIC ENGINEERING, Vol. 88, pp. 1259–1264.

Remote Plasma Enhanced Chemical Deposition of Non-Crystalline GeO2 on Ge and Si Substrates

Lucovsky, G., & Zeller, D. (2011, September). JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, Vol. 11, pp. 7974–7981.

Remote Plasma Processing of Sapphire Substrates for Deposition of TiN and TiO2

Lucovsky, G., & Kim, J. (2011, September). JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, Vol. 11, pp. 7962–7968.

Remote plasma-deposited GeO2 with quartz-like Ge- and O-local bonding: Band-edge state and O-vacancy comparisons with SiO2

Microelectronic Engineering, 88(7), 1537–1540.

Spectroscopic Detection of Hopping Induced Mixed Valence of Ti and Sc in GdSc1-xTixO3 for x Greater than Percolation Threshold of 0.16

VIBRONIC INTERACTIONS AND THE JAHN-TELLER EFFECT: THEORY AND APPLICATIONS, Vol. 23, pp. 361–376.

Spectroscopic detection of hopping induced mixed valence for Ti and Sc in GdSc1-xTixO3 for x greater than the percolation threshold of similar to 0.16

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 29(1).

Spectroscopic detection of medium range order in device quality hydrogenated amorphous silicon, a-Si(H)

Journal of Optoelectronics and Advanced Materials, 13(11-12), 1586–1589.

A microscopic bonding model for the compositional dependence of the first sharp diffraction peak (FSDP) in GexSe1-x alloys

Physica status solidi c - current topics in solid state physics, vol 7 no 3-4, 7(3-4), 889–892.

Analysis of the forgotten parts of the Ge K edge spectra: life before the EXAFS oscillations

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7 NO 3-4, Vol. 7, pp. 844–847.

Enhanced leakage current properties of Ni-doped Ba0.6Sr0.4TiO3 thin films driven by modified band edge state

Journal of Applied Physics, 107(2).

Ge doped HfO2 thin films investigated by x-ray absorption spectroscopy

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, Vol. 28, pp. 693–696.

Monoclinic textured HfO2 films on GeOxNy/Ge(100) stacks using interface reconstruction by controlled thermal processing

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, Vol. 28, pp. 662–664.

Nano-regime Length Scales Extracted from the First Sharp Diffraction Peak in Non-crystalline SiO2 and Related Materials: Device Applications

Lucovsky, G., & Phillips, J. C. (2010, March). NANOSCALE RESEARCH LETTERS, Vol. 5, pp. 550–558.

Strain-reducing chemical bonding self-organizations in nanocrystalline composites and non-crystalline glasses and thin films

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 207(3), 631–634.

Untitled

Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 28(6), P1–1.

Application of non-linear optical second harmonic generation and X-ray absorption and spectroscopies to defect related properties of Hf silicate and Hf Si oxynitride gate dielectrics

MICROELECTRONIC ENGINEERING, Vol. 86, pp. 1654–1657.

Bonds and bands in semiconductors

New York: Momentum Press.

Comparisons between intrinsic bonding defects in d(0) transition metal oxide such as HfO2, and impurity atom defects in d(0) complex oxides such as GdScO3

Lucovsky, G., Chung, K.-B., Miotti, L., Bastos, K. P., Amado, C., & Schlom, D. (2009, December). SOLID-STATE ELECTRONICS, Vol. 53, pp. 1273–1279.

Controlled chemical phase separation in binary and ternary composites: A pathway to isotropic optical and electrical behavior for device applications

Lucovsky, G. (2009, May). PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, Vol. 206, pp. 915–918.

Extrinsic interface formation of HfO2 and Al2O3/GeOx gate stacks on Ge (100) substrates

JOURNAL OF APPLIED PHYSICS, 106(4).

Instability of incorporated nitrogen in HfO2 films grown on strained Si0.7Ge0.3 layers

APPLIED PHYSICS LETTERS, 94(4).

Intrinsic bonding defects in thin-film non-crystalline solids: Amorphous silicon (a-Si), hydrogenated amorphous silicon (a-Si:H), amorphous selenium (a-Se) and amorphous selenium-arsenic alloys (a-AsxSe1-x)

PHILOSOPHICAL MAGAZINE, 89(28-30), 2449–2460.

Long range cooperative and local Jahn-Teller effects in nanocrystalline transition metal thin films

Jahn-teller effect: fundamentals and implications for physics and chemistry, 97, 767–808.

Microscopic description of strain-reducing chemical bonding self-organizations in non-crystalline alloys

Lucovsky, G., & Phillips, J. C. (2009, May). PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, Vol. 206, pp. 885–891.

Predeposition plasma nitridation process applied to Ge substrates to passivate interfaces between crystalline-Ge substrates and Hf-based high-K dielectrics

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 27(1), 294–299.

Preparation of Native Oxide and Carbon-Minimized Ge Surface by NH4OH-Based Cleaning for High-k/Ge MOS Gate Stacks

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 156(11), H813–H817.

Spectroscopic differentiation between O-atom vacancy and divacancy defects, respectively, in TiO2 and HfO2 by X-ray absorption spectroscopy

MICROELECTRONIC ENGINEERING, Vol. 86, pp. 1676–1679.

Strain-eliminating chemical bonding self-organizations within intermediate phase (IP) windows in chalcogenide, oxide and nitride non-crystalline bulk glasses and deposited thin film binary, ternary and quaternary alloys

Lucovsky, G., & Phillips, J. C. (2009, October 1). JOURNAL OF NON-CRYSTALLINE SOLIDS, Vol. 355, pp. 1786–1791.

Symmetry determined medium range order (MRO) contributions to the first sharp diffraction peak (FSDP) in non-crystalline oxide and chalcogenide glasses

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 246(8), 1806–1812.

The influence of nitrogen doping on the chemical and local bonding environment of amorphous and crystalline Ge2Sb2Te5

Materials and physics for nonvolatile memories, 1160, 163–168.

Thermal evolution and electrical correlation of defect states in Hf-based high-k dielectrics on n-type Ge (100): Local atomic bonding symmetry

Journal of Applied Physics, 106(7).

Bond constraint theory and the quest for the glass computer

Agarwal, S. C., Paesler, M. A., Baker, D. A., Taylor, P. C., Lucovsky, G., & Edwards, A. (2008, February). PRAMANA-JOURNAL OF PHYSICS, Vol. 70, pp. 245–254.

Bond constraint theory studies of chalcogenide phase change memories

Journal of Non-Crystalline Solids, 354(19-25), 2706–2710.

Bulk defects in nano-crystalline and in non-crystalline HfO2-based thin film dielectrics

THIN SOLID FILMS, 517(1), 437–440.

Chemical bonding and graded interfacial transition regions at transition metal, Hf(Zr),/high-k gate dielectric, Hf(Zr)O(2), interfaces

THIN SOLID FILMS, 517(1), 343–345.

Defect scaling in non-crystalline floppy/under-constrained and rigid/over-constrained thin films: Applications to a-Se, a-Si, and a-Si(H)

Lucovsky, G., Kasap, S. O., & Phillips, J. C. (2008, May 1). JOURNAL OF NON-CRYSTALLINE SOLIDS, Vol. 354, pp. 2724–2727.

Elimination of GeO2 and Ge3N4 interfacial transition regions and defects at n-type Ge interfaces: A pathway for formation of n-MOS devices on Ge substrates

Applied Surface Science, 254(23), 7933–7937.

Interfacial transition regions at germanium/Hf oxide based dielectric interfaces: Qualitative differences between non-crystalline Hf Si oxynitride and nanocrystalline HfO2 gate stacks

Lucovsky, G., Lee, S., Long, J. P., Seo, H., & Luening, J. (2009, March). MICROELECTRONIC ENGINEERING, Vol. 86, pp. 224–234.

Length scale discontinuities between non-crystalline and nano-crystalline thin films: Chemical bonding self-organization, broken constraints and reductions of macroscopic strain

Journal of Non-Crystalline Solids, 354(19-25), 2702–2705.

Low energy electron-excited nanoscale luminescence spectroscopy studies of intrinsic defects in HfO2 and SiO2-HfO2-SiO2-Si stacks

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 26(1), 232–243.

Reversible chemical phase separation in on-state of art ReWritable (RW) Ge2Sb2Te5 optical phase change memories

Lucovsky, G., & Phillips, J. C. (2008, May 1). JOURNAL OF NON-CRYSTALLINE SOLIDS, Vol. 354, pp. 2753–2756.

Suppression of Ge-O and Ge-N bonding at Ge-HfO2 and Ge-TiO2 interfaces by deposition onto plasma-nitrided passivated Ge substrates

THIN SOLID FILMS, 517(1), 155–158.

Suppression of defect states in HfSiON gate dielectric films on n-type Ge(100) substrates

APPLIED PHYSICS LETTERS, 93(18).

A new class of intermediate phases in non-crystalline films based on a confluent double percolation mechanism

Journal of Physics. Condensed Matter, 19(45).

A self-consistent model for defect states in a-Si and a-Si : H

Journal of Materials Science. Materials in Electronics., 18, S463–467.

Band edge electronic structure of transition metal/rare earth oxide dielectrics

[Review of ]. Rare Earth Oxide Thin Films: Growth , Characterization , and Applications, 106, 285–311. Berlin: Springer-Verlag Berlin.

Bond constraint theory and EXAFS studies of local bonding structures of Ge2Sb2Te4, Ge2Sb2Te5, and Ge2Sb2Te7

Journal of Optoelectronics and Advanced Materials, 9(10), 2996–3001.

Chemical self-organization length scales in non- and nano-crystalline thin films

Lucovsky, G., & Phillips, J. C. (2007, October). SOLID-STATE ELECTRONICS, Vol. 51, pp. 1308–1318.

Defect reduction by suppression of pi-bonding coupling in nano- and non-crystalline high-(medium)-kappa gate dielectrics

MICROELECTRONIC ENGINEERING, Vol. 84, pp. 2350–2353.

Defect reduction in non-crystalline and nano-crystalline thin films: chemical bonding self-organizations and minimization of macroscopic strain

Journal of Optoelectronics and Advanced Materials, 9(10), 2989–2995.

EXAFS study of local order in the amorphous chalcogenide semiconductor Ge2Sb2Te5

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, Vol. 68, pp. 873–877.

Effect of Ga on the structure of Ge-Se-Ga glasses from thermal analysis, Raman and XPS measurements

Journal of Materials Science. Materials in Electronics., 18, S367–370.

Intermediate phases in binary and ternary alloys. How far can we go with a semi-empirical bond-constraint theory?

Journal of Optoelectronics and Advanced Materials, 9(10), 2979–2988.

Intermediate phases in binary and ternary alloys: a new perspective on semi-empirical bond constraint theory

Journal of Physics. Condensed Matter, 19(45).

Intrinsic electronically active defects in transition metal elemental oxides

Lucovsky, G., Seo, H., Lee, S., Fleming, L. B., Ulrich, M. D., Luning, J., … Bersuker, G. (2007, April). JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, Vol. 46, pp. 1899–1909.

Jahn-Teller d-state term splittings in Ti, Zr, and Hf elemental oxides: Intrinsic bonding/anti-bonding states and conduction/valence band edge intrinsic defects

Lucovsky, G. (2007, July 16). JOURNAL OF MOLECULAR STRUCTURE, Vol. 838, pp. 187–192.

Length scales for coherent pi-bonding interactions in complex high-k oxide dielectrics and their interfaces

MICROELECTRONIC ENGINEERING, Vol. 84, pp. 2298–2301.

Local bonding arrangements in amorphous Ge2Sb2Te5: the importance of Ge and Te bonding

Baker, D. A., Paesler, M. A., & Lucovsky, G. (2007, October). JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, Vol. 18, pp. S399–S403.

Metal gate electrodes for devices with high-k gate dielectrics: Zr/ZrO2 and Hf/HfO2 intrinsic interfacial transition regions

MICROELECTRONIC ENGINEERING, Vol. 84, pp. 2259–2262.

Metal gate electrodes: Theoretical studies of Zr/ZrO2 and Hf/HfO2 interfaces

Lucovsky, G., & Whitten, J. L. (2007, September 15). SURFACE SCIENCE, Vol. 601, pp. 4138–4143.

Origin of charge density at LaAlO3 on SrTiO3 heterointerfaces: Possibility of intrinsic doping

PHYSICAL REVIEW LETTERS, 98(19).

Spectroscopic and electrical detection of intermediate phases and chemical bonding self-organizations in (i) dielectric films for semiconductor devices, and (ii) chalcogenide alloys for optical memory devices

Lucovsky, G., Baker, D. A., Paesler, M. A., & Phillips, J. C. (2007, June 15). JOURNAL OF NON-CRYSTALLINE SOLIDS, Vol. 353, pp. 1713–1722.

Spectroscopic studies of O-vacancy defects in transition metal oxides

Lucovsky, G., Luening, J., Fleming, L. B., Ulrich, M. D., Rowe, J. E., Seo, H., … Bersuker, G. (2007, October). JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, Vol. 18, pp. S263–S266.

Studies of bonding defects, and defect state suppression in HfO2 by soft X-ray absorption and photoelectron spectroscopies

Lucovsky, G., Seo, H., Fleming, L. B., Luening, J., Lysaght, P., & Bersuker, G. (2007, September 15). SURFACE SCIENCE, Vol. 601, pp. 4236–4241.

Suppression of Ge-O and Ge-N bonding at Ge-HfO2 and Ge-TiO2 interfaces by deposition onto plasma-nitrided passivated Ge substrates: Integration issues Ge gate stacks into advanced devices

MICROELECTRONICS RELIABILITY, 48(3), 364–369.

Total dose and bias temperature stress effects for HfSiON on Si MOS capacitors

Chen, D. K., Mamouni, E. E., Zhou, X. J., Schrimpf, R. D., Fleetwood, D. M., Galloway, K. F., … Cressler, J. D. (2007, December). IEEE TRANSACTIONS ON NUCLEAR SCIENCE, Vol. 54, pp. 1931–1937.

"Thermal stability of TiO2, ZrO2, or HfO2 on Si(100) by photoelectron emission microscopy" (vol 99, pg 023519, 2006)

Zeman, M. C., Fulton, C. C., Lucovsky, G., Nemanich, R. J., & Yang, W. C. (2006, May 15). JOURNAL OF APPLIED PHYSICS, Vol. 99.

A study of conduction band edge states in complex oxides by X-ray absorption spectroscopy

Fulton, C. C., Edge, L. F., Lucovsky, G., & Luning, J. (2006, November). RADIATION PHYSICS AND CHEMISTRY, Vol. 75, pp. 1934–1938.

Application of bond constraint theory to the switchable optical memory material Ge2Sb2Te5

PHYSICAL REVIEW LETTERS, 96(25).

Band edge electronic structure of transition metal/rare earth oxide dielectrics

Lucovsky, G. (2006, October 31). APPLIED SURFACE SCIENCE, Vol. 253, pp. 311–321.

Comparison of ultrathin SiO2/Si(100) and SiO2/Si(111) interfaces from soft x-ray photoelectron spectroscopy

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol. 24, pp. 2132–2137.

Detection of nanocrystallinity by X-ray absorption spectroscopy in thin film transition metal/rare-earth atom, elemental and complex oxides

Edge, L. F., Schlom, D. G., Stemmer, S., Lucovsky, G., & Luning, J. (2006, November). RADIATION PHYSICS AND CHEMISTRY, Vol. 75, pp. 1608–1612.

Differences between charge trapping states in irradiated nano-crystalline HfO2 and non-crystalline Hf silicates

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 53(6), 3644–3648.

EXAFS study of amorphous Ge2Sb2Te5

Baker, D. A., Paesler, M. A., Lucovsky, G., & Taylor, P. C. (2006, June 15). JOURNAL OF NON-CRYSTALLINE SOLIDS, Vol. 352, pp. 1621–1623.

EXAFS study of local order in the amorphous chalcogenide semiconductor Ge2Sb2Te5

Journal of Optoelectronics and Advanced Materials, 8(6), 2039–2043.

Electronic properties of the Zr-ZrO2-SiO2-Si(100) gate stack structure

JOURNAL OF APPLIED PHYSICS, 99(6).

Intrinsic bonding defects in transition metal elemental oxides

MICROELECTRONICS RELIABILITY, Vol. 46, pp. 1623–1628.

Intrinsic nanocrystalline grain-boundary and oxygen atom vacancy defects in ZrO2 and HfO2

Lucovsky, G., Hinkle, C. L., Fulton, C. C., Stoute, N. A., Seo, H., & Luning, J. (2006, November). RADIATION PHYSICS AND CHEMISTRY, Vol. 75, pp. 2097–2101.

Network disruption and modification in arsenic and germanium chalcogenides by the addition of univalent metal sulfides and selenides: Comparisons with network disruption and modification in zirconium silicate alloys

Lucovsky, G., & Phillips, J. C. (2006, June 15). JOURNAL OF NON-CRYSTALLINE SOLIDS, Vol. 352, pp. 1534–1538.

Reduction of bonding constraints by self-organization in gate dielectrics for a-Si : H thin film transistors (TFTs) and crystalline Si field effect transistors (FETs)

Lucovsky, G., & Phillips, J. C. (2006, June 15). JOURNAL OF NON-CRYSTALLINE SOLIDS, Vol. 352, pp. 1711–1714.

Reduction of bulk and interface defects by network self-organizations in gate dielectrics for silicon thin film and field effect transistors (TFTs and FETs, respectively)

Lucovsky, G., & Phillips, J. C. (2006, November 15). JOURNAL OF NON-CRYSTALLINE SOLIDS, Vol. 352, pp. 4509–4516.

Reduction of defects by network self-organizations in non-crystalline dielectrics and semiconductors: a tribute to Professor Radu Grigorovici on the occasion of his 95(th) birthday

Journal of Optoelectronics and Advanced Materials, 8(6), 1969–1978.

Suppression of Jahn-Teller term-split band edge states in the x-ray absorption spectra of non-crystalline Zr silicates and Si oxynitride alloys, and alloys of ZrO2 with Y2O3

Lucovsky, G., Fulton, C. C., Ju, B. S., Stoute, N. A., Tao, S., Aspnes, D. E., & Luening, J. (2006, November). RADIATION PHYSICS AND CHEMISTRY, Vol. 75, pp. 1591–1595.

Thermal stability of TiO2, ZrO2, or HfO2 on Si(100) by photoelectron emission microscopy

JOURNAL OF APPLIED PHYSICS, 99(2).

Bond strain and defects at interfaces in high-k gate stacks

MICROELECTRONICS RELIABILITY, Vol. 45, pp. 770–778.

Conduction band states of transition metal (TM) high-k gate dielectrics as determined from X-ray absorption spectra

MICROELECTRONICS RELIABILITY, Vol. 45, pp. 827–830.

Conduction band-edge d-states in high-k dielectrics due to Jahn-Teller term splittings

Lucovsky, G., Fulton, C. C., Zhang, Y., Luning, J., Edge, L., Whitten, J. L., … Afanase'v, VV. (2005, August 22). THIN SOLID FILMS, Vol. 486, pp. 129–135.

Conduction band-edge states associated with the removal of d-state degeneracies by the Jahn-Teller effect

IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 5(1), 65–83.

Defects and defect relaxation at internal interfaces between high-k transition metal and rare earth dielectrics and interfacial native oxides in metal oxide semiconductor (MOS) structures

Lucovsky, G., & Phillips, J. C. (2005, August 22). THIN SOLID FILMS, Vol. 486, pp. 200–204.

Final state effects in VUV and soft X-ray absorption spectra of transition metal oxides and silicate alloys: comparisons between experiment and ab initio calculations

Lucovsky, G., Zhang, Y., Fulton, C. C., Zou, Y., Nemanich, R. J., Ade, H., & Whitten, J. L. (2005, June). JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, Vol. 144, pp. 917–919.

Intrinsic band edge traps in nano-crystalline HfO2 gate dielectrics

Lucovsky, G., Zhang, Y., Luning, J., Afanase'v, VV, Stesmans, A., Zollner, S., … Whitten, J. L. (2005, June). MICROELECTRONIC ENGINEERING, Vol. 80, pp. 110–113.

Non-crystalline oxides and chalcogenides: A new paradigm based on ab initio quantum chemistry calculations for short range order and properties, and bond-constraint theory for network connectivity, network disruption and chemical phase separation

Journal of Optoelectronics and Advanced Materials, 7(4), 1691–1706.

Self-organization and the physics of glassy networks

PHILOSOPHICAL MAGAZINE, 85(32), 3823–3838.

Studies of the coupling of final d*-states in mixed Hf and Ti oxides (HfO2)(x)(TiOx)(1-x) and other complex oxides

Fulton, C. C., Lucovsky, G., Zhang, Y., Zou, Y., Nemanich, R. J., Ade, H., & Whitten, J. L. (2005, June). JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, Vol. 144, pp. 913–916.

A novel approach for determining the effective tunneling mass of electrons in HfO2 and other high-K alternative gate dielectrics for advanced CMOS devices

Hinkle, C. L., Fulton, C., Nemanich, R. J., & Lucovsky, G. (2004, April). MICROELECTRONIC ENGINEERING, Vol. 72, pp. 257–262.

A spectroscopic phase separation study distinguishing between chemical with different degrees of crystallinity in Zr(Hf) silicate alloys

Lucovsky, G., Rayner, G. B., Kang, D., Hinkle, C. L., & Hong, J. G. (2004, September 20). SURFACE SCIENCE, Vol. 566, pp. 772–776.

A spectroscopic study distinguishing between chemical phase separation with different degrees of crystallinity in Hf(Zr) silicate alloys

Lucovsky, G., Rayner, G. B., Kang, D., Hinkle, C. L., & Hong, J. G. (2004, July 15). APPLIED SURFACE SCIENCE, Vol. 234, pp. 429–433.

Ab initio theory calculations of the electronic structure of nc-AS(2)S(3) and GeS2: an intrinsic mechanism for reversible photo-darkening

Journal of Non-Crystalline Solids, 338-40(Jun 15 2004), 543–547.

Band alignment between (100)Si and complex rare earth/transition metal oxides

APPLIED PHYSICS LETTERS, 85(24), 5917–5919.

Bond strain and defects at Si-SiO2 and internal dielectric interfaces in high-k gate stacks

Lucovsky, G., & Phillips, J. C. (2004, November 10). JOURNAL OF PHYSICS-CONDENSED MATTER, Vol. 16, pp. S5139–S5151.

Chemical phase separation in Zr silicate alloys: a spectroscopic study distinguishing between chemical phase separation with different degree of micro- and nano-crystallinity

Rayner, G. B., Kang, D., Hinkle, C. L., Hong, J. G., & Lucovsky, G. (2004, April). MICROELECTRONIC ENGINEERING, Vol. 72, pp. 304–309.

Chemical phase separation in Zr silicate alloys: a spectroscopic study distinguishing between chemical phase separation with different degrees of micro- and nano-crystallinity

Rayner, G. B., Kang, D., & Lucovsky, G. (2004, June 15). JOURNAL OF NON-CRYSTALLINE SOLIDS, Vol. 338, pp. 151–154.

Electron trapping in metal-insulator-semiconductor structures on n-GaN with SiO2 and Si3N4 dielectrics

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 22(6), 2379–2383.

Enhanced tunneling in stacked gate dielectrics with ultra-thin HfO2 (ZrO2) layers sandwiched between thicker SiO2 layers

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