Gerald Lucovsky Ives, R. L., Zeller, D., Lucovsky, G., Schamiloglu, E., Marsden, D., Collins, G., … Karimov, R. (2015). Multipactor Coating for Sapphire RF Windows Using Remote Plasma-Assisted Deposition. IEEE TRANSACTIONS ON PLASMA SCIENCE, 43(8), 2571–2580. https://doi.org/10.1109/tps.2015.2450678 Lucovsky, G., Zeller, D. J., Cheng, C., & Zhang, Y. (2014). Remote plasma-processing (RPP), medium range order, and precursor sites for dangling bond defects in "amorphous-Si(H)" alloys: Photovoltaic and thin film transistor devices. SURFACE & COATINGS TECHNOLOGY, 242, 183–186. https://doi.org/10.1016/j.surfcoat.2013.06.104 Lucovsky, G. (2013). Band-edge electronic structure and pre-existing defects in remote plasma deposited non-crystalline SiO2 and GeO2. Japanese Journal of Applied Physics, 52(4). Lucovsky, G. (2013, May). Band-edge electronic structures, and pre-existing defects in remote plasma deposited (RPD) non-crystalline (nc-) SiO2 and GeO2. SOLID-STATE ELECTRONICS, Vol. 83, pp. 30–36. https://doi.org/10.1016/j.sse.2013.01.028 Lucovsky, G., Wu, K., Pappas, B., & Whitten, J. (2013). Ligand field splittings in core level transitions for transition metal (TM) oxides: Tanabe-Sugano diagrams and (TM) dangling bonds in vacated O-atom defects. Xxist international symposium on the jahn-teller effect 2012, 428. Lucovsky, G. (2013). Nano-scale order in hydrogenated amorphous silicon a-Si,H and doped a-Si(H) defect reduction for device applications. 2013 14th international conference on ultimate integration on silicon (ulis), 217–220. Lucovsky, G., Kim, J., Wu, K., & Zeller, D. (2013). Noncrystalline SiO2 and GeO2: Process induced pre-existing defects and vacated O-atom intrinsic bonding sites. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 31(1). https://doi.org/10.1116/1.4773923 Lucovsky, G., Zeller, D., Kim, J. W., & Wu, K. (2013). Process induced pre-existing defects in non-crystalline SiO2 and GeO2 at vacated O-atom bonding sites and comparisons with Ge-S(Se) alloy bonding sites. XXIST INTERNATIONAL SYMPOSIUM ON THE JAHN-TELLER EFFECT 2012, Vol. 428. https://doi.org/10.1088/1742-6596/428/1/012017 Lucovsky, G., & Kim, J. (2013). Qualitative and quantitative differences between non-crystalline and nano-crystalline oxides in device technologies. 2013 14th international conference on ultimate integration on silicon (ulis), 174–177. Lucovsky, G., Parsons, G., Zeller, D., & Kim, J. (2013). Spectroscopic Detection of Medium Range Order in Device Grade Hydrogenated Amorphous Silicon. JAPANESE JOURNAL OF APPLIED PHYSICS, 52(4). https://doi.org/10.7567/jjap.52.04cr10 Lucovsky, G., & Kim, J. (2013). Transport through singlet states in resistive memory materials: Magneli-phase, TinO2n-1 for 9 >= n > 3, and TiO2-HfO2 alloys. Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 31(1). Lucovsky, G., Miotti, L., & Bastos, K. P. (2012). Many-Electron Multiplet Theory Applied to O-Vacancies in (i) Nanocrystalline HfO2 and (ii) Non-crystalline SiO2 and Si Oxynitride Alloys. VIBRONIC INTERACTIONS AND THE JAHN-TELLER EFFECT: THEORY AND APPLICATIONS, Vol. 23, pp. 193–211. https://doi.org/10.1007/978-94-007-2384-9_10 Lucovsky, G., Miotti, L., & Bastos, K. P. (2012, June). O-Vacancies in (i) Nano-Crystalline HfO2 and (i) Non-Crystalline SiO2 and Si3N4 Studied by X-ray Absorption Spectroscopy. JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, Vol. 12, pp. 4811–4819. https://doi.org/10.1166/jnn.2012.4912 Lucovsky, G., Miotti, L., Bastos, K. P., Adamo, C., & Schlom, D. G. (2012, June). Spectroscopic Detection of Hopping Induced Mixed Valence for Ti and Sc in GdSc1-xTixO3 for x > 0.165. JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, Vol. 12, pp. 4749–4756. https://doi.org/10.1166/jnn.2012.4911 Lucovsky, G., Miotti, L., & Bastos, K. P. (2012). Spectroscopic Detection of Hopping Induced Mixed Valence of Ti and Sc in GdSc1-xTixO3 for x Greater than Percolation Threshold of 0.16. VIBRONIC INTERACTIONS AND THE JAHN-TELLER EFFECT: THEORY AND APPLICATIONS, Vol. 23, pp. 361–376. https://doi.org/10.1007/978-94-007-2384-9_20 Gokce, B., Aspnes, D. E., Lucovsky, G., & Gundogdu, K. (2011). Bond-specific reaction kinetics during the oxidation of (111) Si: Effect of n-type doping. Applied Physics Letters, 98(2). Washington, J. S., Joseph, E. A., Raoux, S., Jordan-Sweet, J. L., Miller, D., Cheng, H.-Y., … Lam, C. H. (2011). Characterizing the effects of etch-induced material modification on the crystallization properties of nitrogen doped Ge2Sb2Te5. JOURNAL OF APPLIED PHYSICS, 109(3). https://doi.org/10.1063/1.3524510 Soares, G. V., Krug, C., Miotti, L., Bastos, K. P., Lucovsky, G., Baumvol, I. J. R., & Radtke, C. (2011). Intermixing between HfO2 and GeO2 films deposited on Ge(001) and Si(001): Role of the substrate. APPLIED PHYSICS LETTERS, 98(13). https://doi.org/10.1063/1.3574093 Lucovsky, G., Miotti, L., & Bastos, K. P. (2011). Many-electron multiplet theory applied to o-atom vacancies in high-k dielectrics. Japanese Journal of Applied Physics. Part 1, Regular Papers, Short Notes & Review Papers, 50(4). https://doi.org/10.7567/jjap.50.04da15 Lucovsky, G. (2011). Multiplet theory for conduction band edge and O-Vacancy defect states in SiO2, Si3N4, and Si oxynitride alloy thin films. Japanese Journal of Applied Physics. Part 1, Regular Papers, Short Notes & Review Papers, 50(4). Katz, E. J., Zhang, Z., Hughes, H. L., Chung, K. B., Lucovsky, G., & Brillson, L. J. (2011). Nanoscale depth-resolved electronic properties of SiO2/SiOx/SiO2 for device-tolerant electronics. Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 29(1). Lucovsky, G., Kim, J. W., Wu, K., Zeller, D., Papas, B., & Whitten, J. L. (2011). Non-crystalline SiO(2): processing induced pre-existing defects associated with vacated O-atom intrinsic bonding sites. Journal of Optoelectronics and Advanced Materials, 13(11-12), 1359–1363. Lucovsky, G., Miotti, L., & Bastos, K. P. (2011). O-vacancies in (i) nanocrystalline HfO2 and (i) noncrystalline SiO2 and Si3N4 studied by x-ray absorption spectroscopy. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 29(1). https://doi.org/10.1116/1.3533758 Lucovsky, G., Zeller, D., & Whitten, J. L. (2011). O-vacancies in transition metal (TM) oxides: Coordination and local site symmetry of transition and negative ion states in TM2O3 and TMO2 oxides. Microelectronic Engineering, 88(7), 1471–1474. https://doi.org/10.1016/j.mee.2011.03.153 Schrimpf, R. D., Fleetwood, D. M., Alles, M. L., Reed, R. A., Lucovsky, G., & Pantelides, S. T. (2011, July). Radiation effects in new materials for nano-devices (invited). MICROELECTRONIC ENGINEERING, Vol. 88, pp. 1259–1264. https://doi.org/10.1016/j.mee.2011.03.117 Lucovsky, G., & Zeller, D. (2011, September). Remote Plasma Enhanced Chemical Deposition of Non-Crystalline GeO2 on Ge and Si Substrates. JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, Vol. 11, pp. 7974–7981. https://doi.org/10.1166/jnn.2011.5090 Lucovsky, G., & Kim, J. (2011, September). Remote Plasma Processing of Sapphire Substrates for Deposition of TiN and TiO2. JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, Vol. 11, pp. 7962–7968. https://doi.org/10.1166/jnn.2011.5089 Lucovsky, G., Zeller, D., Wu, K., & Whitten, J. L. (2011). Remote plasma-deposited GeO2 with quartz-like Ge- and O-local bonding: Band-edge state and O-vacancy comparisons with SiO2. Microelectronic Engineering, 88(7), 1537–1540. https://doi.org/10.1016/j.mee.2011.03.152 Lucovsky, G., Miotti, L., Bastos, K. P., Adamo, C., & Schlom, D. G. (2011). Spectroscopic detection of hopping induced mixed valence for Ti and Sc in GdSc1-xTixO3 for x greater than the percolation threshold of similar to 0.16. Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 29(1). Lucovsky, G., Parsons, G., Zeller, D., Wu, K., Papas, B., Whitten, J., … Street, R. A. (2011). Spectroscopic detection of medium range order in device quality hydrogenated amorphous silicon, a-Si(H). Journal of Optoelectronics and Advanced Materials, 13(11-12), 1586–1589. Lucovsky, G., & Phillips, J. C. (2010). A microscopic bonding model for the compositional dependence of the first sharp diffraction peak (FSDP) in GexSe1-x alloys. Physica status solidi c - current topics in solid state physics, vol 7 no 3-4, 7(3-4), 889–892. Lucovsky, G., Washington, J. P., Miotti, L., & Paesler, M. (2010). Analysis of the forgotten parts of the Ge K edge spectra: life before the EXAFS oscillations. PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7 NO 3-4, Vol. 7, pp. 844–847. https://doi.org/10.1002/pssc.200982887 Seo, H., Kim, Y. B., Lucovsky, G., Kim, I. D., Chung, K. B., Kobayashi, H., & Choi, D. K. (2010). Enhanced leakage current properties of Ni-doped Ba0.6Sr0.4TiO3 thin films driven by modified band edge state. Journal of Applied Physics, 107(2). Miotti, L., Bastos, K. P., Lucovsky, G., Radtke, C., & Nordlund, D. (2010). Ge doped HfO2 thin films investigated by x-ray absorption spectroscopy. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, Vol. 28, pp. 693–696. https://doi.org/10.1116/1.3430562 Bastos, K. P., Miotti, L., Lucovsky, G., Chung, K.-B., & Nordlund, D. (2010). Monoclinic textured HfO2 films on GeOxNy/Ge(100) stacks using interface reconstruction by controlled thermal processing. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, Vol. 28, pp. 662–664. https://doi.org/10.1116/1.3430563 Lucovsky, G., & Phillips, J. C. (2010, March). Nano-regime Length Scales Extracted from the First Sharp Diffraction Peak in Non-crystalline SiO2 and Related Materials: Device Applications. NANOSCALE RESEARCH LETTERS, Vol. 5, pp. 550–558. https://doi.org/10.1007/s11671-009-9520-6 Lucovsky, G. (2010). Strain-reducing chemical bonding self-organizations in nanocrystalline composites and non-crystalline glasses and thin films. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 207(3), 631–634. https://doi.org/10.1002/pssa.200982841 Lucovsky, G. (2010). Untitled. Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 28(6), P1–1. Gundogdu, K., Lucovsky, G., Chung, K.-B., Kim, J.-W., & Nordlund, D. (2009). Application of non-linear optical second harmonic generation and X-ray absorption and spectroscopies to defect related properties of Hf silicate and Hf Si oxynitride gate dielectrics. MICROELECTRONIC ENGINEERING, Vol. 86, pp. 1654–1657. https://doi.org/10.1016/j.mee.2009.03.004 Phillips, J. C., & Lucovsky., G. (2009). Bonds and bands in semiconductors. New York: Momentum Press. Lucovsky, G., Chung, K.-B., Miotti, L., Bastos, K. P., Amado, C., & Schlom, D. (2009, December). Comparisons between intrinsic bonding defects in d(0) transition metal oxide such as HfO2, and impurity atom defects in d(0) complex oxides such as GdScO3. SOLID-STATE ELECTRONICS, Vol. 53, pp. 1273–1279. https://doi.org/10.1016/j.sse.2009.10.012 Lucovsky, G. (2009, May). Controlled chemical phase separation in binary and ternary composites: A pathway to isotropic optical and electrical behavior for device applications. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, Vol. 206, pp. 915–918. https://doi.org/10.1002/pssa.200881312 Seo, H., Bellenger, F., Chung, K. B., Houssa, M., Meuris, M., Heyns, M., & Lucovsky, G. (2009). Extrinsic interface formation of HfO2 and Al2O3/GeOx gate stacks on Ge (100) substrates. JOURNAL OF APPLIED PHYSICS, 106(4). https://doi.org/10.1063/1.3204026 Chung, K. B., Lucovsky, G., Lee, W. J., Cho, M.-H., & Jeon, H. (2009). Instability of incorporated nitrogen in HfO2 films grown on strained Si0.7Ge0.3 layers. APPLIED PHYSICS LETTERS, 94(4). https://doi.org/10.1063/1.3077014 Lucovsky, G., Lee, S., Long, J. P., Seo, H., & Luening, J. (2009, March). Interfacial transition regions at germanium/Hf oxide based dielectric interfaces: Qualitative differences between non-crystalline Hf Si oxynitride and nanocrystalline HfO2 gate stacks. MICROELECTRONIC ENGINEERING, Vol. 86, pp. 224–234. https://doi.org/10.1016/j.mee.2008.05.023 Lucovsky, G. (2009). Intrinsic bonding defects in thin-film non-crystalline solids: Amorphous silicon (a-Si), hydrogenated amorphous silicon (a-Si:H), amorphous selenium (a-Se) and amorphous selenium-arsenic alloys (a-AsxSe1-x). PHILOSOPHICAL MAGAZINE, 89(28-30), 2449–2460. https://doi.org/10.1080/14786430902729540 Lucovsky, G. (2009). Long range cooperative and local Jahn-Teller effects in nanocrystalline transition metal thin films. Jahn-teller effect: fundamentals and implications for physics and chemistry, 97, 767–808. Lucovsky, G., & Phillips, J. C. (2009, May). Microscopic description of strain-reducing chemical bonding self-organizations in non-crystalline alloys. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, Vol. 206, pp. 885–891. https://doi.org/10.1002/pssa.200881311 Lucovsky, G., Long, J. P., Chung, K. B., Seo, H., Watts, B., Vasic, R., & Ulrich, M. D. (2009). Predeposition plasma nitridation process applied to Ge substrates to passivate interfaces between crystalline-Ge substrates and Hf-based high-K dielectrics. Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 27(1), 294–299. Seo, H., Chung, K. B., Long, J. P., & Lucovsky, G. (2009). Preparation of Native Oxide and Carbon-Minimized Ge Surface by NH4OH-Based Cleaning for High-k/Ge MOS Gate Stacks. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 156(11), H813–H817. https://doi.org/10.1149/1.3212848 Lucovsky, G., Chung, K.-B., Kim, J.-W., & Norlund, D. (2009). Spectroscopic differentiation between O-atom vacancy and divacancy defects, respectively, in TiO2 and HfO2 by X-ray absorption spectroscopy. MICROELECTRONIC ENGINEERING, Vol. 86, pp. 1676–1679. https://doi.org/10.1016/j.mee.2009.03.005 Lucovsky, G., & Phillips, J. C. (2009, October 1). Strain-eliminating chemical bonding self-organizations within intermediate phase (IP) windows in chalcogenide, oxide and nitride non-crystalline bulk glasses and deposited thin film binary, ternary and quaternary alloys. JOURNAL OF NON-CRYSTALLINE SOLIDS, Vol. 355, pp. 1786–1791. https://doi.org/10.1016/j.jnoncrysol.2009.04.044 Lucovsky, G., & Phillips, J. C. (2009). Symmetry determined medium range order (MRO) contributions to the first sharp diffraction peak (FSDP) in non-crystalline oxide and chalcogenide glasses. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 246(8), 1806–1812. https://doi.org/10.1002/pssb.200982008 Washington, J. S., Josep, E., Paesler, M. A., Lucovsky, G., Jordan-Sweet, J. L., Raoux, S., … Woicik, J. (2009). The influence of nitrogen doping on the chemical and local bonding environment of amorphous and crystalline Ge2Sb2Te5. Materials and physics for nonvolatile memories, 1160, 163–168. https://doi.org/10.1557/proc-1160-h13-08 Chung, K. B., Long, J. P., Seo, H., Lucovsky, G., & Nordlund, D. (2009). Thermal evolution and electrical correlation of defect states in Hf-based high-k dielectrics on n-type Ge (100): Local atomic bonding symmetry. Journal of Applied Physics, 106(7). Agarwal, S. C., Paesler, M. A., Baker, D. A., Taylor, P. C., Lucovsky, G., & Edwards, A. (2008, February). Bond constraint theory and the quest for the glass computer. PRAMANA-JOURNAL OF PHYSICS, Vol. 70, pp. 245–254. https://doi.org/10.1007/s12043-008-0043-y Paesler, M. A., Baker, D. A., & Lucovsky, G. (2008). Bond constraint theory studies of chalcogenide phase change memories. Journal of Non-Crystalline Solids, 354(19-25), 2706–2710. https://doi.org/10.1016/j.jnoncryso1.2007.09.045 Lee, S., Seo, H., Lucovsky, G., Fleming, L. B., Ulrich, M. D., & Luening, J. (2008). Bulk defects in nano-crystalline and in non-crystalline HfO2-based thin film dielectrics. THIN SOLID FILMS, 517(1), 437–440. https://doi.org/10.1016/j.tsf.2008.08.098 Lucovsky, G., & Whitten, J. L. (2008). Chemical bonding and graded interfacial transition regions at transition metal, Hf(Zr),/high-k gate dielectric, Hf(Zr)O(2), interfaces. THIN SOLID FILMS, 517(1), 343–345. https://doi.org/10.1016/j.tsf.2008.08.034 Lucovsky, G., Kasap, S. O., & Phillips, J. C. (2008, May 1). Defect scaling in non-crystalline floppy/under-constrained and rigid/over-constrained thin films: Applications to a-Se, a-Si, and a-Si(H). JOURNAL OF NON-CRYSTALLINE SOLIDS, Vol. 354, pp. 2724–2727. https://doi.org/10.1016/j.jnoncrysol.2007.09.048 Lucovsky, G., Lee, S., Long, J. P., Seo, H., & Luning, J. (2008). Elimination of GeO2 and Ge3N4 interfacial transition regions and defects at n-type Ge interfaces: A pathway for formation of n-MOS devices on Ge substrates. Applied Surface Science, 254(23), 7933–7937. https://doi.org/10.1016/j.apsusc.2008.03.157 Lucovsky, G., & Phillips, J. C. (2008). Length scale discontinuities between non-crystalline and nano-crystalline thin films: Chemical bonding self-organization, broken constraints and reductions of macroscopic strain. Journal of Non-Crystalline Solids, 354(19-25), 2702–2705. https://doi.org/10.1016/j.jnoncryso1.2007.09.044 Strzhemechny, Y. M., Bataiev, M., Tumakha, S. P., Goss, S. H., Hinkle, C. L., Fulton, C. C., … Brillson, L. J. (2008). Low energy electron-excited nanoscale luminescence spectroscopy studies of intrinsic defects in HfO2 and SiO2-HfO2-SiO2-Si stacks. Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 26(1), 232–243. Lucovsky, G., & Phillips, J. C. (2008, May 1). Reversible chemical phase separation in on-state of art ReWritable (RW) Ge2Sb2Te5 optical phase change memories. JOURNAL OF NON-CRYSTALLINE SOLIDS, Vol. 354, pp. 2753–2756. https://doi.org/10.1016/j.jnoncrysol.2007.09.059 Lee, S., Long, J. P., Lucovsky, G., & Luening, J. (2008). Suppression of Ge-O and Ge-N bonding at Ge-HfO2 and Ge-TiO2 interfaces by deposition onto plasma-nitrided passivated Ge substrates. THIN SOLID FILMS, 517(1), 155–158. https://doi.org/10.1016/j.tsf.2008.08.099 Lee, S., Long, J. P., Lucovsky, G., Whitten, J. L., Seo, H., & Luning, J. (2008). Suppression of Ge-O and Ge-N bonding at Ge-HfO2 and Ge-TiO2 interfaces by deposition onto plasma-nitrided passivated Ge substrates: Integration issues Ge gate stacks into advanced devices. MICROELECTRONICS RELIABILITY, 48(3), 364–369. https://doi.org/10.1016/j.microrel.2007.07.068 Chung, K. B., Seo, H., Long, J. P., & Lucovsky, G. (2008). Suppression of defect states in HfSiON gate dielectric films on n-type Ge(100) substrates. APPLIED PHYSICS LETTERS, 93(18). https://doi.org/10.1063/1.3005422 Lucovsky, G., & Phillips, J. C. (2007). A new class of intermediate phases in non-crystalline films based on a confluent double percolation mechanism. Journal of Physics. Condensed Matter, 19(45). Lucovsky, G., & Phillips, J. (2007). A self-consistent model for defect states in a-Si and a-Si : H. Journal of Materials Science. Materials in Electronics., 18, S463–467. Lucovsky, G. (2007). [Review of Band edge electronic structure of transition metal/rare earth oxide dielectrics]. Rare Earth Oxide Thin Films: Growth , Characterization , and Applications, 106, 285–311. Berlin: Springer-Verlag Berlin. Paesler, M. A., Baker, D. A., Lucovsky, G., Taylor, P. C., & Washington, J. S. (2007). Bond constraint theory and EXAFS studies of local bonding structures of Ge2Sb2Te4, Ge2Sb2Te5, and Ge2Sb2Te7. Journal of Optoelectronics and Advanced Materials, 9(10), 2996–3001. Lucovsky, G., & Phillips, J. C. (2007, October). Chemical self-organization length scales in non- and nano-crystalline thin films. SOLID-STATE ELECTRONICS, Vol. 51, pp. 1308–1318. https://doi.org/10.1016/j.sse.2007.06.001 Lucovsky, G., Seo, H., Lee, S., Fleming, L. B., Ulrich, M. D., & Luning, J. (2007). Defect reduction by suppression of pi-bonding coupling in nano- and non-crystalline high-(medium)-kappa gate dielectrics. MICROELECTRONIC ENGINEERING, Vol. 84, pp. 2350–2353. https://doi.org/10.1016/j.mee.2007.04.062 Lucovsky, G., & Phillips, J. C. (2007). Defect reduction in non-crystalline and nano-crystalline thin films: chemical bonding self-organizations and minimization of macroscopic strain. Journal of Optoelectronics and Advanced Materials, 9(10), 2989–2995. Paesler, M. A., Baker, D. A., Lucovsky, G., Edwards, A. E., & Taylor, P. C. (2007). EXAFS study of local order in the amorphous chalcogenide semiconductor Ge2Sb2Te5. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, Vol. 68, pp. 873–877. https://doi.org/10.1016/j.jpcs.2007.03.041 Maeda, K., Sakai, T., Sakai, K., Ikari, T., Munzar, M., Tonchev, D., … Lucovsky, G. (2007). Effect of Ga on the structure of Ge-Se-Ga glasses from thermal analysis, Raman and XPS measurements. Journal of Materials Science. Materials in Electronics., 18, S367–370. Lucovsky, G., Baker, D. A., Paesler, M. A., Phillips, J. C., & Thorpe, M. F. (2007). Intermediate phases in binary and ternary alloys. How far can we go with a semi-empirical bond-constraint theory? Journal of Optoelectronics and Advanced Materials, 9(10), 2979–2988. Lucovsky, G., & Phillips, J. C. (2007). Intermediate phases in binary and ternary alloys: a new perspective on semi-empirical bond constraint theory. Journal of Physics. Condensed Matter, 19(45). Lucovsky, G., Seo, H., Lee, S., Fleming, L. B., Ulrich, M. D., Luning, J., … Bersuker, G. (2007, April). Intrinsic electronically active defects in transition metal elemental oxides. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, Vol. 46, pp. 1899–1909. https://doi.org/10.1143/JJAP.46.1899 Lucovsky, G. (2007, July 16). Jahn-Teller d-state term splittings in Ti, Zr, and Hf elemental oxides: Intrinsic bonding/anti-bonding states and conduction/valence band edge intrinsic defects. JOURNAL OF MOLECULAR STRUCTURE, Vol. 838, pp. 187–192. https://doi.org/10.1016/j.molstruc.2007.01.010 Seo, H., Lucovsky, G., Fleming, L. B., Ulrich, M. D., Luning, J., Koster, G., & Geballe, T. H. (2007). Length scales for coherent pi-bonding interactions in complex high-k oxide dielectrics and their interfaces. MICROELECTRONIC ENGINEERING, Vol. 84, pp. 2298–2301. https://doi.org/10.1016/j.mee.2007.04.069 Baker, D. A., Paesler, M. A., & Lucovsky, G. (2007, October). Local bonding arrangements in amorphous Ge2Sb2Te5: the importance of Ge and Te bonding. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, Vol. 18, pp. S399–S403. https://doi.org/10.1007/s10854-007-9233-5 Lucovsky, G., & Whitten, J. L. (2007). Metal gate electrodes for devices with high-k gate dielectrics: Zr/ZrO2 and Hf/HfO2 intrinsic interfacial transition regions. MICROELECTRONIC ENGINEERING, Vol. 84, pp. 2259–2262. https://doi.org/10.1016/j.mee.2007.04.073 Lucovsky, G., & Whitten, J. L. (2007, September 15). Metal gate electrodes: Theoretical studies of Zr/ZrO2 and Hf/HfO2 interfaces. SURFACE SCIENCE, Vol. 601, pp. 4138–4143. https://doi.org/10.1016/j.susc.2007.04.057 Siemons, W., Koster, G., Yamamoto, H., Harrison, W. A., Lucovsky, G., Geballe, T. H., … Beasley, M. R. (2007). Origin of charge density at LaAlO3 on SrTiO3 heterointerfaces: Possibility of intrinsic doping. PHYSICAL REVIEW LETTERS, 98(19). https://doi.org/10.1103/physrevlett.98.196802 Lucovsky, G., Baker, D. A., Paesler, M. A., & Phillips, J. C. (2007, June 15). Spectroscopic and electrical detection of intermediate phases and chemical bonding self-organizations in (i) dielectric films for semiconductor devices, and (ii) chalcogenide alloys for optical memory devices. JOURNAL OF NON-CRYSTALLINE SOLIDS, Vol. 353, pp. 1713–1722. https://doi.org/10.1016/j.jnoncrysol.2007.01.041 Lucovsky, G., Luening, J., Fleming, L. B., Ulrich, M. D., Rowe, J. E., Seo, H., … Bersuker, G. (2007, October). Spectroscopic studies of O-vacancy defects in transition metal oxides. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, Vol. 18, pp. S263–S266. https://doi.org/10.1007/s10854-007-9192-x Lucovsky, G., Seo, H., Fleming, L. B., Luening, J., Lysaght, P., & Bersuker, G. (2007, September 15). Studies of bonding defects, and defect state suppression in HfO2 by soft X-ray absorption and photoelectron spectroscopies. SURFACE SCIENCE, Vol. 601, pp. 4236–4241. https://doi.org/10.1016/j.susc.2007.04.197 Chen, D. K., Mamouni, E. E., Zhou, X. J., Schrimpf, R. D., Fleetwood, D. M., Galloway, K. F., … Cressler, J. D. (2007, December). Total dose and bias temperature stress effects for HfSiON on Si MOS capacitors. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, Vol. 54, pp. 1931–1937. https://doi.org/10.1109/TNS.2007.910862 Zeman, M. C., Fulton, C. C., Lucovsky, G., Nemanich, R. J., & Yang, W. C. (2006, May 15). "Thermal stability of TiO2, ZrO2, or HfO2 on Si(100) by photoelectron emission microscopy" (vol 99, pg 023519, 2006). JOURNAL OF APPLIED PHYSICS, Vol. 99. https://doi.org/10.1063/1.2201707 Fulton, C. C., Edge, L. F., Lucovsky, G., & Luning, J. (2006, November). A study of conduction band edge states in complex oxides by X-ray absorption spectroscopy. RADIATION PHYSICS AND CHEMISTRY, Vol. 75, pp. 1934–1938. https://doi.org/10.1016/j.radphyschem.2005.07.045 Baker, D. A., Paesler, M. A., Lucovsky, G., Agarwal, S. C., & Taylor, P. C. (2006). Application of bond constraint theory to the switchable optical memory material Ge2Sb2Te5. PHYSICAL REVIEW LETTERS, 96(25). https://doi.org/10.1103/physrevlett.96.255501 Lucovsky, G. (2006, October 31). Band edge electronic structure of transition metal/rare earth oxide dielectrics. APPLIED SURFACE SCIENCE, Vol. 253, pp. 311–321. https://doi.org/10.1016/j.apsusc.2006.06.001 Ulrich, M. D., Rowe, J. E., & Keister, J. W. (2006). Comparison of ultrathin SiO2/Si(100) and SiO2/Si(111) interfaces from soft x-ray photoelectron spectroscopy. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol. 24, pp. 2132–2137. https://doi.org/10.1116/1.2218865 Edge, L. F., Schlom, D. G., Stemmer, S., Lucovsky, G., & Luning, J. (2006, November). Detection of nanocrystallinity by X-ray absorption spectroscopy in thin film transition metal/rare-earth atom, elemental and complex oxides. RADIATION PHYSICS AND CHEMISTRY, Vol. 75, pp. 1608–1612. https://doi.org/10.1016/j.radphyschem.2006.05.005 Lucovsky, G., Fleetwood, D. M., Lee, S., Seo, H., Schrimpf, R. D., Felix, J. A., … Aspnes, D. E. (2006). Differences between charge trapping states in irradiated nano-crystalline HfO2 and non-crystalline Hf silicates. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 53(6), 3644–3648. https://doi.org/10.1109/TNS.2006.886211 Baker, D. A., Paesler, M. A., Lucovsky, G., & Taylor, P. C. (2006, June 15). EXAFS study of amorphous Ge2Sb2Te5. JOURNAL OF NON-CRYSTALLINE SOLIDS, Vol. 352, pp. 1621–1623. https://doi.org/10.1016/j.jnoncrysol.2005.11.079 Paesler, M. A., Baker, D. A., Lucovsky, G., Edwards, A. E., & Taylor, P. C. (2006). EXAFS study of local order in the amorphous chalcogenide semiconductor Ge2Sb2Te5. Journal of Optoelectronics and Advanced Materials, 8(6), 2039–2043. Fulton, C. C., Lucovsky, G., & Nemanich, R. J. (2006). Electronic properties of the Zr-ZrO2-SiO2-Si(100) gate stack structure. JOURNAL OF APPLIED PHYSICS, 99(6). https://doi.org/10.1063/1.2181282 Lucovsky, G., Seo, H., Fleming, L. B., Ulrich, M. D., Luning, J., Lysaght, P., & Bersuker, G. (2006). Intrinsic bonding defects in transition metal elemental oxides. MICROELECTRONICS RELIABILITY, Vol. 46, pp. 1623–1628. https://doi.org/10.1016/j.microrel.2006.07.032 Lucovsky, G., Hinkle, C. L., Fulton, C. C., Stoute, N. A., Seo, H., & Luning, J. (2006, November). Intrinsic nanocrystalline grain-boundary and oxygen atom vacancy defects in ZrO2 and HfO2. RADIATION PHYSICS AND CHEMISTRY, Vol. 75, pp. 2097–2101. https://doi.org/10.1016/j.radphyschem.2005.07.062 Lucovsky, G., & Phillips, J. C. (2006, June 15). Network disruption and modification in arsenic and germanium chalcogenides by the addition of univalent metal sulfides and selenides: Comparisons with network disruption and modification in zirconium silicate alloys. JOURNAL OF NON-CRYSTALLINE SOLIDS, Vol. 352, pp. 1534–1538. https://doi.org/10.1016/j.jnoncrysol.2005.12.022 Lucovsky, G., & Phillips, J. C. (2006, June 15). Reduction of bonding constraints by self-organization in gate dielectrics for a-Si : H thin film transistors (TFTs) and crystalline Si field effect transistors (FETs). JOURNAL OF NON-CRYSTALLINE SOLIDS, Vol. 352, pp. 1711–1714. https://doi.org/10.1016/j.jnoncrysol.2005.11.130 Lucovsky, G., & Phillips, J. C. (2006, November 15). Reduction of bulk and interface defects by network self-organizations in gate dielectrics for silicon thin film and field effect transistors (TFTs and FETs, respectively). JOURNAL OF NON-CRYSTALLINE SOLIDS, Vol. 352, pp. 4509–4516. https://doi.org/10.1016/j.jnoncrysol.2006.03.123 Lucovsky, G., & Phillips, J. C. (2006). Reduction of defects by network self-organizations in non-crystalline dielectrics and semiconductors: a tribute to Professor Radu Grigorovici on the occasion of his 95(th) birthday. Journal of Optoelectronics and Advanced Materials, 8(6), 1969–1978. Lucovsky, G., Fulton, C. C., Ju, B. S., Stoute, N. A., Tao, S., Aspnes, D. E., & Luening, J. (2006, November). Suppression of Jahn-Teller term-split band edge states in the x-ray absorption spectra of non-crystalline Zr silicates and Si oxynitride alloys, and alloys of ZrO2 with Y2O3. RADIATION PHYSICS AND CHEMISTRY, Vol. 75, pp. 1591–1595. https://doi.org/10.1016/j.radphyschem.2006.05.004 Zeman, M. C., Fulton, C. C., Lucovsky, G., Nemanich, R. J., & Yang, W. C. (2006). Thermal stability of TiO2, ZrO2, or HfO2 on Si(100) by photoelectron emission microscopy. JOURNAL OF APPLIED PHYSICS, 99(2). https://doi.org/10.1063/1.2163984 Lucovsky, G., & Phillips, J. C. (2005). Bond strain and defects at interfaces in high-k gate stacks. MICROELECTRONICS RELIABILITY, Vol. 45, pp. 770–778. https://doi.org/10.1016/j.microrel.2004.11.051 Lucovsky, G., Hong, J. G., Fulton, C. C., Stoute, N. A., Zou, Y., Nemanich, R. J., … Schlom, D. G. (2005). Conduction band states of transition metal (TM) high-k gate dielectrics as determined from X-ray absorption spectra. MICROELECTRONICS RELIABILITY, Vol. 45, pp. 827–830. https://doi.org/10.1016/j.microrel.2004.11.038 Lucovsky, G., Fulton, C. C., Zhang, Y., Luning, J., Edge, L., Whitten, J. L., … Afanase'v, VV. (2005, August 22). Conduction band-edge d-states in high-k dielectrics due to Jahn-Teller term splittings. THIN SOLID FILMS, Vol. 486, pp. 129–135. https://doi.org/10.1016/j.tsf.2004.11.233 Lucovsky, G., Fulton, C. C., Zhang, Y., Zou, Y., Luning, J., Edge, L. F., … Rogers, B. R. (2005). Conduction band-edge states associated with the removal of d-state degeneracies by the Jahn-Teller effect. IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 5(1), 65–83. https://doi.org/10.1109/TDMR.2005.845804 Lucovsky, G., & Phillips, J. C. (2005, August 22). Defects and defect relaxation at internal interfaces between high-k transition metal and rare earth dielectrics and interfacial native oxides in metal oxide semiconductor (MOS) structures. THIN SOLID FILMS, Vol. 486, pp. 200–204. https://doi.org/10.1016/j.tsf.2004.11.224 Lucovsky, G., Zhang, Y., Fulton, C. C., Zou, Y., Nemanich, R. J., Ade, H., & Whitten, J. L. (2005, June). Final state effects in VUV and soft X-ray absorption spectra of transition metal oxides and silicate alloys: comparisons between experiment and ab initio calculations. JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, Vol. 144, pp. 917–919. https://doi.org/10.1016/j.elspec.2005.01.251 Lucovsky, G., Zhang, Y., Luning, J., Afanase'v, VV, Stesmans, A., Zollner, S., … Whitten, J. L. (2005, June). Intrinsic band edge traps in nano-crystalline HfO2 gate dielectrics. MICROELECTRONIC ENGINEERING, Vol. 80, pp. 110–113. https://doi.org/10.1016/j.mee.2005.04.052 Lucovsky, G. (2005). Non-crystalline oxides and chalcogenides: A new paradigm based on ab initio quantum chemistry calculations for short range order and properties, and bond-constraint theory for network connectivity, network disruption and chemical phase separation. Journal of Optoelectronics and Advanced Materials, 7(4), 1691–1706. Boolchand, P., Lucovsky, G., Phillips, J. C., & Thorpe, M. F. (2005). Self-organization and the physics of glassy networks. PHILOSOPHICAL MAGAZINE, 85(32), 3823–3838. https://doi.org/10.1080/14786430500256425 Fulton, C. C., Lucovsky, G., Zhang, Y., Zou, Y., Nemanich, R. J., Ade, H., & Whitten, J. L. (2005, June). Studies of the coupling of final d*-states in mixed Hf and Ti oxides (HfO2)(x)(TiOx)(1-x) and other complex oxides. JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, Vol. 144, pp. 913–916. https://doi.org/10.1016/j.elspec.2005.01.098 Hinkle, C. L., Fulton, C., Nemanich, R. J., & Lucovsky, G. (2004, April). A novel approach for determining the effective tunneling mass of electrons in HfO2 and other high-K alternative gate dielectrics for advanced CMOS devices. MICROELECTRONIC ENGINEERING, Vol. 72, pp. 257–262. https://doi.org/10.1016/j.mee.2003.12.047 Lucovsky, G., Rayner, G. B., Kang, D., Hinkle, C. L., & Hong, J. G. (2004, September 20). A spectroscopic phase separation study distinguishing between chemical with different degrees of crystallinity in Zr(Hf) silicate alloys. SURFACE SCIENCE, Vol. 566, pp. 772–776. https://doi.org/10.1016/j.susc.2004.06.010 Lucovsky, G., Rayner, G. B., Kang, D., Hinkle, C. L., & Hong, J. G. (2004, July 15). A spectroscopic study distinguishing between chemical phase separation with different degrees of crystallinity in Hf(Zr) silicate alloys. APPLIED SURFACE SCIENCE, Vol. 234, pp. 429–433. https://doi.org/10.1016/j.apsusc.2004.05.075 Mowrer, T., Lucovsky, G., Sremaniak, L. S., & Whitten, J. (2004). Ab initio theory calculations of the electronic structure of nc-AS(2)S(3) and GeS2: an intrinsic mechanism for reversible photo-darkening. Journal of Non-Crystalline Solids, 338-40(Jun 15 2004), 543–547. https://doi.org/10.1016/j.jnocrysol.2004.03.038 Afanas'ev, VV, Stesmans, A., Zhao, C., Caymax, M., Heeg, T., Schubert, J., … Lucovsky, G. (2004). Band alignment between (100)Si and complex rare earth/transition metal oxides. APPLIED PHYSICS LETTERS, 85(24), 5917–5919. https://doi.org/10.1063/1.1829781 Lucovsky, G., & Phillips, J. C. (2004, November 10). Bond strain and defects at Si-SiO2 and internal dielectric interfaces in high-k gate stacks. JOURNAL OF PHYSICS-CONDENSED MATTER, Vol. 16, pp. S5139–S5151. https://doi.org/10.1088/0953-8984/16/44/011 Lee, Y. M., Wu, Y. D., & Lucovsky, G. (2004). Breakdown and reliability of p-MOS devices with stacked RPECVD oxide/nitride gate dielectric under constant voltage stress. MICROELECTRONICS RELIABILITY, 44(2), 207–212. https://doi.org/10.1016/j.microrel.2003.07.002 Rayner, G. B., Kang, D., Hinkle, C. L., Hong, J. G., & Lucovsky, G. (2004, April). Chemical phase separation in Zr silicate alloys: a spectroscopic study distinguishing between chemical phase separation with different degree of micro- and nano-crystallinity. MICROELECTRONIC ENGINEERING, Vol. 72, pp. 304–309. https://doi.org/10.1016/j.mee.2004.01.008 Rayner, G. B., Kang, D., & Lucovsky, G. (2004, June 15). Chemical phase separation in Zr silicate alloys: a spectroscopic study distinguishing between chemical phase separation with different degrees of micro- and nano-crystallinity. JOURNAL OF NON-CRYSTALLINE SOLIDS, Vol. 338, pp. 151–154. https://doi.org/10.1016/j.jnoncrysol.2004.02.042 Bae, C., Krug, C., & Lucovsky, G. (2004). Electron trapping in metal-insulator-semiconductor structures on n-GaN with SiO2 and Si3N4 dielectrics. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 22(6), 2379–2383. https://doi.org/10.1116/1.1806439 Hinkle, C. L., Fulton, C., Nemanich, R. J., & Lucovsky, G. (2004, September 20). Enhanced tunneling in stacked gate dielectrics with ultra-thin HfO2 (ZrO2) layers sandwiched between thicker SiO2 layers. SURFACE SCIENCE, Vol. 566, pp. 1185–1189. https://doi.org/10.1016/j.susc.2004.06.084 Hinkle, C. L., Fulton, C., Nemanich, R. J., & Lucovsky, G. (2004). Enhanced tunneling in stacked gate dielectrics with ultra-thin HfO2 layers sandwiched between thicker SiO2 layers. Applied Surface Science, 234(37990), 240–245. https://doi.org/10.1016/j.apsusc.2004-05.076 Fulton, C. C., Cook, T. E., Lucovsky, G., & Nemanich, R. J. (2004). Interface instabilities and electronic properties of ZrO2 on silicon (100). JOURNAL OF APPLIED PHYSICS, 96(5), 2665–2673. https://doi.org/10.1063/1.1776313 Lucovsky, G., & Phillips, J. C. (2004). Interfacial strain-induced self-organization in semiconductor dielectric gate stacks. I. Strain relief at the Si-SiO2 interface. Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 22(4), 2087–2096. Lucovsky, G., Maria, J. P., & Phillips, J. C. (2004). Interfacial strain-induced self-organization in semiconductor dielectric gate stacks. II. Strain-relief at internal dielectric interfaces between SiO2 and alternative gate dielectrics. Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 22(4), 2097–2104. Lucovsky, G., Mowrer, T., Sremaniak, L. S., & Whitten, J. L. (2004, June 15). Local atomic structure and infrared effective charges in tetrahedrally-bonded glasses from ab initio theory electronic structure calculations. JOURNAL OF NON-CRYSTALLINE SOLIDS, Vol. 338, pp. 155–158. https://doi.org/10.1016/j.jnoncrysol.2004.02.043 Bae, C., & Lucovsky, G. (2004). Low-temperature preparation of GaN-SiO2 interfaces with low defect density. I. Two-step remote plasma-assisted oxidation-deposition process. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 22(6), 2402–2410. https://doi.org/10.1116/1.1807396 Bae, C., & Lucovsky, G. (2004). Low-temperature preparation of GaN-SiO2 interfaces with low defect density. II. Remote plasma-assisted oxidation of GaN and nitrogen incorporation\. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 22(6), 2411–2418. https://doi.org/10.1116/1.1807411 Lucovsky, G. (2004). Methods of forming binary noncrystalline oxide analogs of silicon dioxide. Washington, DC: U.S. Patent and Trademark Office. Lucovsky, G., & Phillips, J. C. (2004). Microscopic bonding and macroscopic strain relaxations at Si-SiO2 interfaces. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 78(4), 453–459. https://doi.org/10.1007/s00339-003-2403-2 Soares, G. V., Bastos, K. P., Pezzi, R. P., Miotti, L., Driemeier, C., Baumvol, I. J. R., … Lucovsky, G. (2004). Nitrogen bonding, stability, and transport in AlON films on Si. APPLIED PHYSICS LETTERS, 84(24), 4992–4994. https://doi.org/10.1063/1.1763230 Lucovsky, G., & Parsons, G. N. (2004). Non-crystalline oxides for use in microelectronic, optical, and other applications. Washington, DC: U.S. Patent and Trademark Office. Fulton, C. C., Lucovsky, G., & Nemanich, R. J. (2004). Process-dependent band structure changes of transition-metal (Ti,Zr,Hf) oxides on Si (100). APPLIED PHYSICS LETTERS, 84(4), 580–582. https://doi.org/10.1063/1.1639944 Bae, C., & Lucovsky, G. (2004, September 20). Reductions in interface defects, D-it, by post oxidation plasma-assisted nitridation of GaN-SiO2 interfaces in MOS devices. SURFACE SCIENCE, Vol. 566, pp. 356–360. https://doi.org/10.1016/j.susc.2004.05.072 Bae, C., & Lucovsky, G. (2004, April). Reductions in interface defects, D-it, by post oxidation plasma-assisted nitridation of GaN-SiO2 interfaces in MOS devices. MICROELECTRONIC ENGINEERING, Vol. 72, pp. 236–240. https://doi.org/10.1016/j.mee.2003.12.043 Bae, C., & Lucovsky, G. (2004, July 15). Reductions in interface defects, D-it, by post-oxidation plasma-assisted nitridation of GaN-SiO2 interfaces in MOS devices. APPLIED SURFACE SCIENCE, Vol. 234, pp. 475–479. https://doi.org/10.1016/j.apsusc.2004.05.077 Lucovsky, G., & Niimi, H. (2004). [Review of Remote plasma-assisted oxidation of SiC: a low temperature process for SiC-SiO2 interface formation that eliminates interfacial Si oxycarbide transition regions]. JOURNAL OF PHYSICS-CONDENSED MATTER, 16(17), S1815–S1837. https://doi.org/10.1088/0953-8984/16/17/018 Lucovsky, G., Zhang, Y., Whitten, J. L., Schlom, D. G., & Freeouf, J. L. (2004, April). Separate and independent control of interfacial band alignments and dielectric constants in transition metal rare earth complex oxides. MICROELECTRONIC ENGINEERING, Vol. 72, pp. 288–293. https://doi.org/10.1016/j.mee.2004.01.006 Krug, C., & Lucovsky, G. (2004). Spectroscopic characterization of high k dielectrics: Applications to interface electronic structure and stability against chemical phase separation. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, Vol. 22, pp. 1301–1308. https://doi.org/10.1116/1.1755714 Lucovsky, G., Hong, J. G., Fulton, C. C., Zou, Y., Nemanich, R. J., Ade, H., … Freeouf, J. L. (2004, August). Spectroscopic studies of metal high-k dielectrics: transition metal oxides and silicates, and complex rare earth/transition metal oxides. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, Vol. 241, pp. 2221–2235. https://doi.org/10.1002/pssb.200404938 Lucovsky, G., Zhang, Y., Whitten, J. L., Schlom, D. G., & Freeouf, J. L. (2004, March). Spectroscopic studies of the electrical structure of transition metal and rare earth complex oxides. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, Vol. 21, pp. 712–716. https://doi.org/10.1016/j.physe.2003.11.111 Edge, L. F., Schlom, D. G., Brewer, R. T., Chabal, Y. J., Williams, JR, Chambers, S. A., … Schubert, J. (2004). Suppression of subcutaneous oxidation during the deposition of amorphous lanthanum aluminate on silicon. APPLIED PHYSICS LETTERS, 84(23), 4629–4631. https://doi.org/10.1063/1.1759065 Bae, C., Krug, C., Lucovsky, G., Chakraborty, A., & Mishra, U. (2004). Surface passivation of n-GaN by nitrided-thin-Ga2O3/SiO2 and Si3N4 films. JOURNAL OF APPLIED PHYSICS, 96(5), 2674–2680. https://doi.org/10.1063/1.1772884 Bastos, K. P., Pezzi, R. P., Miotti, L., Soares, G. V., Driemeier, C., Morais, J., … Lucovsky, G. (2004). Thermal stability of plasma-nitrided aluminum oxide films on Si. APPLIED PHYSICS LETTERS, 84(1), 97–99. https://doi.org/10.1063/1.1638629 Bae, C., Krug, C., Lucovsky, G., Chakraborty, A., & Mishra, U. (2004). Work-function difference between Al and n-GaN from Al-gated n-GaN/nitrided-thin-Ga2O3/SiO2 metal oxide semiconductor structures. Applied Physics Letters, 84(26), 5413–5415. https://doi.org/10.1063/1.1767599 Lucovsky, G., Hong, J. G., Fulton, C. C., Zou, Y., Nemanich, R. J., & Ade, H. (2004). X-ray absorption spectra for transition metal high-kappa dielectrics: Final state differences for intra- and inter-atomic transitions. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol. 22, pp. 2132–2138. https://doi.org/10.1116/1.1771670 Lucovsky, G., Sremaniak, L. S., Mowrer, T., & Whitten, J. L. (2003). A new approach for calculating the electronic structure and vibrational properties of non-crystalline solids: Effective charges for infrared-active normal mode vibrations in oxide and chalcogenide materials. Journal of Non-Crystalline Solids, 326(2003 Oct 1), 14-. Lucovsky, G., & Rubloff, G. (2003). American Vacuum Society leadership in electronic materials processing: Past, present, and future. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 21(5), S175–S181. https://doi.org/10.1116/1.1599866 Lucovsky, G., Rayner, B., Zhang, Y., Appel, G., & Whitten, J. (2003, June 30). Band offset energies in zirconium silicate Si alloys. APPLIED SURFACE SCIENCE, Vol. 216, pp. 215–222. https://doi.org/10.1016/S0169-4332(03)00429-X Cook, T. E., Fulton, C. C., Mecouch, W. J., Davis, R. F., Lucovsky, G., & Nemanich, R. J. (2003). Band offset measurements of the GaN (0001)/HfO2 interface. Journal of Applied Physics, 94(11), 7155–7158. https://doi.org/10.1063/1.1618374 Cook, T. E., Fulton, C. C., Mecouch, W. J., Davis, R. F., Lucovsky, G., & Nemanich, R. J. (2003). Band offset measurements of the Si3N4/GaN (0001) interface. JOURNAL OF APPLIED PHYSICS, 94(6), 3949–3954. https://doi.org/10.1063/1.1601314 Lucovsky, G. (2003). Binary non-crystalline oxide analogs of silicon dioxide for use in gate dielectrics. Washington, DC: U.S. Patent and Trademark Office. Sremaniak, L. S., Whitten, J. L., Menon, M., & Lucovsky, G. (2003, May 15). Contributions to the infrared effective charges of oxides and chalcogenides from equilibrium charge and dynamic charge redistribution during normal mode motions. APPLIED SURFACE SCIENCE, Vol. 212, pp. 839–843. https://doi.org/10.1016/S0169-4332(03)00087-4 Bae, C., Rayner, G. B., & Lucovsky, G. (2003, June 30). Device-quality GaN-dielectric interfaces by 300 degrees C remote plasma processing. APPLIED SURFACE SCIENCE, Vol. 216, pp. 119–123. https://doi.org/10.1016/S0169-4332(03)00497-5 Lucovsky, G., Raynor, G. B., Zhang, Y., Fulton, C. C., Nemanich, R. J., Appel, G., … Whitten, J. L. (2003, May 15). Electronic structure of transition metal high-k dielectrics: interfacial band offset energies for microelectronic devices. APPLIED SURFACE SCIENCE, Vol. 212, pp. 563–569. https://doi.org/10.1016/S0169-4332(03)00055-2 Lucovsky, G. (2003). Electronic structure of transition metal/rare earth alternative high-K gate dielectrics: interfacial band alignments and intrinsic defects. MICROELECTRONICS RELIABILITY, Vol. 43, pp. 1417–1426. https://doi.org/10.1016/S0026-2714(03)00253-1 Bae, C., & Lucovsky, G. (2003, June 10). Low temperature semiconductor surface passivation for nanoelectronic device applications. SURFACE SCIENCE, Vol. 532, pp. 759–763. https://doi.org/10.1016/S0039-6028(03)00181-X Cook, T. E., Fulton, C. C., Mecouch, W. J., Tracy, K. M., Davis, R. F., Hurt, E. H., … Nemanich, R. J. (2003). Measurement of the band offsets of SiO2 on clean n- and p-type GaN(0001). JOURNAL OF APPLIED PHYSICS, 93(7), 3995–4004. https://doi.org/10.1063/1.1559424 Bae, C., & Lucovsky, G. (2003, May 15). Oxide formation and passivation for micro- and nano-electronic devices. APPLIED SURFACE SCIENCE, Vol. 212, pp. 644–648. https://doi.org/10.1016/S0169-4332(03)00139-9 Hinkle, C., & Lucovsky, G. (2003, June 30). Remote plasma-assisted nitridation (RPN): applications to Zr and Hf silicate alloys and Al2O3. APPLIED SURFACE SCIENCE, Vol. 216, pp. 124–132. https://doi.org/10.1016/S0169-4332(03)00499-9 Ulrich, M. D., Hong, J. G., Rowe, J. E., Lucovsky, G., Chan, A. S. Y., & Madey, T. E. (2003). Soft x-ray photoelectron spectroscopy of (HfO2)(x)(SiO2)(1-x) high-k gate-dielectric structures. Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 21(4), 1777–1782. Rayner, G. B., Kang, D., & Lucovsky, G. (2003). Spectroscopic study of chemical phase separation in zirconium silicate alloys. Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 21(4), 1783–1791. Lee, Y. M., Wu, Y. D., Bae, C., Hong, J. G., & Lucovsky, G. (2003). Structural dependence of breakdown characteristics and electrical degradation in ultrathin RPECVD oxide/nitride gate dielectrics under constant voltage stress. SOLID-STATE ELECTRONICS, 47(1), 71–76. https://doi.org/10.1016/S0038-1101(02)00257-5 Lucovsky, G., Whitten, J. L., & Zhang, Y. (2002, May 8). A molecular orbital model for the electronic structure of transition metal atoms in silcate and aluminate alloys. APPLIED SURFACE SCIENCE, Vol. 190, pp. 48–55. https://doi.org/10.1016/S0169-4332(01)00835-2 Lucovsky, G., Whitten, J. L., & Zhang, Y. (2002, November). A molecular orbital model for the electronic structure of transition metal atoms in silicate and aluminate alloys. SOLID-STATE ELECTRONICS, Vol. 46, pp. 1687–1697. https://doi.org/10.1016/S0038-1101(02)00160-0 Lucovsky, G. (2002, April 1). Amorphous morphology, thermal stability and electronic structure of non-crystalline transition-metal elemental and binary oxides, and chalcogenides. JOURNAL OF NON-CRYSTALLINE SOLIDS, Vol. 299, pp. 231–237. https://doi.org/10.1016/S0022-3093(01)01162-0 Glinka, Y. D., Wang, W., Singh, S. K., Marka, Z., Rashkeev, S. N., Shirokaya, Y., … Lucovsky, G. (2002). Characterization of charge-carrier dynamics in thin oxide layers on silicon by second harmonic generation. Physical Review. B, Condensed Matter and Materials Physics, 65(19), 193103–193101. Lucovsky, G. (2002, May 1). Correlations between electronic structure of transition metal atoms and performance of high-k gate dielectrics in advanced Si devices. JOURNAL OF NON-CRYSTALLINE SOLIDS, Vol. 303, pp. 40–49. https://doi.org/10.1016/S0022-3093(02)00962-6 Lim, S. G., Kriventsov, S., Jackson, T. N., Haeni, J. H., Schlom, D. G., Balbashov, A. M., … Lucovsky, G. (2002). Dielectric functions and optical bandgaps of high-K dielectrics for metal-oxide-semiconductor field-effect transistors by far ultraviolet spectroscopic ellipsometry. JOURNAL OF APPLIED PHYSICS, 91(7), 4500–4505. https://doi.org/10.1063/1.1456246 Johnson, R. S., Hong, J. G., Hinkle, C., & Lucovsky, G. (2002, November). Electron trapping in non-crystalline Ta- and Hf-aluminates for gate dielectric applications in aggressively scaled silicon devices. SOLID-STATE ELECTRONICS, Vol. 46, pp. 1799–1805. https://doi.org/10.1016/S0038-1101(02)00152-1 Johnson, R. S., Hong, J. G., Hinkle, C., & Lucovsky, G. (2002). Electron trapping in noncrystalline remote plasma deposited Hf- aluminate alloys for gate dielectric applications. Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 20(3), 1126–1131. Fulton, C. C., Lucovsky, G., & Nemanich, R. J. (2002). Electronic states at the interface of Ti-Si oxide on Si(100). JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol. 20, pp. 1726–1731. https://doi.org/10.1116/1.1493785 Whitten, J. L., Zhang, Y., Menon, M., & Lucovsky, G. (2002). Electronic structure of SiO2: Charge redistribution contributions to the dynamic dipoles/effective charges of the infrared active normal modes. Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 20(4), 1710–1719. Lucovsky, G., Zhang, Y., Rayner, G. B., Appel, G., Ade, H., & Whitten, J. L. (2002). Electronic structure of high-k transition metal oxides and their silicate and aluminate alloys. Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 20(4), 1739–1747. Johnson, R. S., Lucovsky, G., & Hong, J. G. (2002, May 8). Fixed charge and interface traps at heterovalent interfaces between Si(100) and non-crystalline Al2O3-Ta2O5 alloys. APPLIED SURFACE SCIENCE, Vol. 190, pp. 43–47. https://doi.org/10.1016/S0169-4332(01)00889-3 Ulrich, M. D., Johnson, R. S., Hong, J. G., Rowe, J. E., Lucovsky, G., Quinton, J. S., & Madey, T. E. (2002). Interface electronic structure of Ta2O5-Al2O3 alloys for Si- field-effect transistor gate dielectric applications. Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 20(4), 1732–1738. Misra, V., Lucovsky, G., & Parsons, G. N. (2002). Issues in high-kappa gate stack interfaces. MRS BULLETIN, 27(3), 212–216. https://doi.org/10.1557/mrs2002.73 Choi, B. K., Fleetwood, D. M., Schrimpf, R. D., Massengill, L. W., Galloway, K. F., Shaneyfelt, M. R., … Lucovsky, G. (2002, December). Long-term reliability degradation of ultrathin dielectric films due to heavy-ion irradiation. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, Vol. 49, pp. 3045–3050. https://doi.org/10.1109/TNS.2002.805389 Khandelwal, A., Niimi, H., Lucovsky, G., & Lamb, H. H. (2002). Low-temperature Ar/N-2 remote plasma nitridation of SiO2 thin films. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 20(6), 1989–1996. https://doi.org/10.1116/1.1513635 Rayner, G. B., Kang, D., Zhang, Y., & Lucovsky, G. (2002). Nonlinear composition dependence of x-ray photoelectron spectroscopy and Auger electron spectroscopy features in plasma-deposited zirconium silicate alloy thin films. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol. 20, pp. 1748–1758. https://doi.org/10.1116/1.1493788 Boehme, C., & Lucovsky, G. (2002, April 1). Origins of silicon solar cell passivation by SiNx : H anneal. JOURNAL OF NON-CRYSTALLINE SOLIDS, Vol. 299, pp. 1157–1161. https://doi.org/10.1016/S0022-3093(01)01135-8 Niimi, H., Khandelwal, A., Lamb, H. H., & Lucovsky, G. (2002). Reaction pathways in remote plasma nitridation of ultrathin SiO2 films. JOURNAL OF APPLIED PHYSICS, 91(1), 48–55. https://doi.org/10.1063/1.1419208 Choi, B. K., Fleetwood, D. M., Massengill, L. W., Schrimpf, R. D., Galloway, K. F., Shaneyfelt, M. R., … Lucovsky, G. (2002). Reliability degradation of ultra-thin oxynitride and Al2O3 gate dielectric films owing to heavy-ion irradiation. Electronics Letters, 38(4), 157–158. https://doi.org/10.1049/el:20020119 Wang, J. F. T., Powell, G. D., Johnson, R. S., Lucovsky, G., & Aspnes, D. E. (2002). Simplified bond-hyperpolarizability model of second harmonic generation: Application to Si-dielectric interfaces. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol. 20, pp. 1699–1705. https://doi.org/10.1116/1.1493783 Felix, J. A., Fleetwood, D. M., Schrimpf, R. D., Hong, J. G., Lucovsky, G., Schwank, JR, & Shaneyfelt, M. R. (2002, December). Total-dose radiation response of hafnium-silicate capacitors. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, Vol. 49, pp. 3191–3196. https://doi.org/10.1109/TNS.2002.805392 Osburn, C. M., Kim, I., Han, S. K., De, I., Yee, K. F., Gannavaram, S., … Ozturk, M. C. (2002). Vertically scaled MOSFET gate stacks and junctions: How far are we likely to go? IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 46(2-3), 299–315. https://doi.org/10.1147/rd.462.0299 Fan, Y. Y., Nieh, R. E., Lee, J. C., Lucovsky, G., Brown, G. A., Register, L. F., & Banerjee, S. K. (2002). Voltage- and temperature-dependent gate capacitance and current model: Application to ZrO2 n-channel MOS capacitor. IEEE TRANSACTIONS ON ELECTRON DEVICES, 49(11), 1969–1978. https://doi.org/10.1109/TED.2002.804713 Lucovsky, G., Whitten, J. L., & Zhang, Y. (2001, November). A molecular orbital model for the electronic structure of transition metal atoms in silicate and aluminate alloys. MICROELECTRONIC ENGINEERING, Vol. 59, pp. 329–334. https://doi.org/10.1016/S0167-9317(01)00653-0 Lazar, H. R., Misra, V., Johnson, R. S., & Lucovsky, G. (2001). Characteristics of metalorganic remote plasma chemical vapor deposited Al2O3 gate stacks on SiC metal-oxide-semiconductor devices. APPLIED PHYSICS LETTERS, 79(7), 973–975. https://doi.org/10.1063/1.1392973 Lucovsky, G., Rayner, G. B., & Johnson, R. S. (2001, July). Chemical and physical limits on the performance of metal silicate high-k gate dielectrics. MICROELECTRONICS RELIABILITY, Vol. 41, pp. 937–945. https://doi.org/10.1016/S0026-2714(01)00046-4 Boehme, C., & Lucovsky, G. (2001). Dissociation reactions of hydrogen in remote plasma-enhanced chemical-vapor-deposition silicon nitride. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 19(5), 2622–2628. https://doi.org/10.1116/1.1398538 Johnson, R. S., Hong, J. G., & Lucovsky, G. (2001). Electron traps at interfaces between Si(100) and noncrystalline Al2O3, Ta2O5, and (Ta2O5)(x)(Al2O3)(1-x) alloys. Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 19(4), 1606–1610. Lucovsky, G., Rayner, G. B., Kang, D., Appel, G., Johnson, R. S., Zhang, Y., … Whitten, J. L. (2001). Electronic structure of noncrystalline transition metal silicate and aluminate alloys. APPLIED PHYSICS LETTERS, 79(12), 1775–1777. https://doi.org/10.1063/1.1404997 Lucovsky, G. (2001). Electronic structure, amorphous morphology and thermal stability of transition metal oxide and chalcogenide alloys. Journal of Optoelectronics and Advanced Materials, 3(2), 155–166. Johnson, R. S., Lucovsky, G., & Hong, J. G. (2001, November). Fixed charge and interface traps at heterovalent interfaces between Si(100) and non-crystalline Al2O3-Ta2O5 alloys. MICROELECTRONIC ENGINEERING, Vol. 59, pp. 385–391. https://doi.org/10.1016/S0167-9317(01)00673-6 Massengill, L. W., Choi, B. K., Fleetwood, D. M., Schrimpf, R. D., Galloway, K. F., Shaneyfelt, M. R., … Lucovsky, G. (2001, December). Heavy-ion-induced breakdown in ultra-thin gate oxides and high-k dielectrics. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, Vol. 48, pp. 1904–1912. https://doi.org/10.1109/23.983149 Johnson, R. S., Lucovsky, G., & Baumvol, I. (2001). Physical and electrical properties of noncrystalline Al2O3 prepared by remote plasma enhanced chemical vapor deposition. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, Vol. 19, pp. 1353–1360. https://doi.org/10.1116/1.1379316 Lucovsky, G. (2001). Transition from thermally grown gate dielectrics to deposited gate dielectrics for advanced silicon devices: A classification scheme based on bond ionicity. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, Vol. 19, pp. 1553–1561. https://doi.org/10.1116/1.1379317 Wu, Y. D., Lee, Y. M., & Lucovsky, G. (2000). 1.6 nm oxide equivalent gate dielectrics using nitride/oxide (N/O) composites prepared by RPECVD/oxidation process. IEEE ELECTRON DEVICE LETTERS, 21(3), 116–118. https://doi.org/10.1109/55.823574 Lucovsky, G., & Phillips, J. C. (2000). Application of constraint theory to Si-dielectric interfaces in a-Si: H and poly-Si thin film transistors (TFTs). Journal of Non-Crystalline Solids, 266(2000 May), 1335–1339. Niimi, H., Yang, H. Y., Lucovsky, G., Keister, J. W., & Rowe, J. E. (2000, October 9). Barrier layer model determined by XPS data for tunneling current reductions at monolayer nitrided Si-SiO(2) interfaces. APPLIED SURFACE SCIENCE, Vol. 166, pp. 485–491. https://doi.org/10.1016/S0169-4332(00)00480-3 Therrien, R., Lucovsky, G., & Davis, R. (2000, October 9). Charge redistribution at GaN-Ga2O3 interfaces: a microscopic mechanism for low defect density interfaces in remote-plasma-processed MOS devices prepared on polar GaN faces. APPLIED SURFACE SCIENCE, Vol. 166, pp. 513–519. https://doi.org/10.1016/S0169-4332(00)00485-2 Brillson, L. J., Young, A. P., White, B. D., Schafer, J., Niimi, H., Lee, Y. M., & Lucovsky, G. (2000). Depth-resolved detection and process dependence of traps at ultrathin plasma-oxidized and deposited SiO2/Si interfaces. Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 18(3), 1737–1741. Wolfe, D. M., & Lucovsky, G. (2000). Formation of nano-crystalline Si by thermal annealing of SiOx, SiCx and SiOyCx amorphous alloys: model systems for advanced device processing. Journal of Non-Crystalline Solids, 266(2000 May), 1009–1014. Boehme, C., & Lucovsky, G. (2000). H loss mechanism during anneal of silicon nitride: Chemical dissociation. JOURNAL OF APPLIED PHYSICS, 88(10), 6055–6059. https://doi.org/10.1063/1.1321730 Lucovsky, G., Niimi, H., Wu, Y., & Yang, H. (2000, June). Independent interface and bulk film contributions to reduction of tunneling currents in stacked oxide/nitride gate dielectrics with monolayer nitrided interfaces. APPLIED SURFACE SCIENCE, Vol. 159, pp. 50–61. https://doi.org/10.1016/S0169-4332(00)00071-4 Lucovsky, G., Yang, H., Niimi, H., Keister, J. W., Rowe, J. E., Thorpe, M. F., & Phillips, J. C. (2000). Intrinsic limitations on device performance and reliability from bond-constraint induced transition regions at interfaces of stacked dielectrics. Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 18(3), 1742–1748. Lucovsky, G., Yang, H., Niimi, H., Thorpe, M. F., & Phillips, J. C. (2000). Intrinsic limitations on ultimate device performance and reliability at (i) semiconductor-dielectric interfaces and (ii) internal interfaces in stacked dielectrics. Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 18(4), 2179–2186. Lucovsky, G., & Phillips, J. C. (2000, October 9). Limitations for aggressively scaled CMOS Si devices due to bond coordination constraints and reduced band offset energies at Si-high-k dielectric interfaces. APPLIED SURFACE SCIENCE, Vol. 166, pp. 497–503. https://doi.org/10.1016/S0169-4332(00)00482-7 White, B. D., Brillson, L. J., Lee, S. C., Fleetwood, D. M., Schrimpf, R. D., Pantelides, S. T., … Lucovsky, G. (2000, December). Low energy electron-excited nanoscale luminescence: A tool to detect trap activation by ionizing radiation. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, Vol. 47, pp. 2276–2280. https://doi.org/10.1109/23.903765 Lucovsky, G., & Rayner, G. B. (2000). Microscopic model for enhanced dielectric constants in low concentration SiO2-rich noncrystalline Zr and Hf silicate alloys. APPLIED PHYSICS LETTERS, 77(18), 2912–2914. https://doi.org/10.1063/1.1320860 Johnson, R. S., Niimi, H., & Lucovsky, G. (2000). New approach for the fabrication of device-quality Ge/GeO2/SiO2 interfaces using low temperature remote plasma processing. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, Vol. 18, pp. 1230–1233. https://doi.org/10.1116/1.582331 Lucovsky, G., Yang, H. Y., Wu, Y., & Niimi, H. (2000, October 17). Plasma processed ultra-thin SiO2 interfaces far advanced silicon NMOS and PMOS devices: applications to Si-oxide Si oxynitride, Si-oxide Si nitride and Si-oxide transition metal oxide stacked gate dielectrics. THIN SOLID FILMS, Vol. 374, pp. 217–227. https://doi.org/10.1016/S0040-6090(00)01153-6 Lucovsky, G., Wu, Y., Niimi, H., Yang, H., Keister, J., & Rowe, J. E. (2000). Separate and independent reductions in direct tunneling in oxide/nitride stacks with monolayer interface nitridation associated with the (i) interface nitridation and (ii) increased physical thickness. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, Vol. 18, pp. 1163–1168. https://doi.org/10.1116/1.582318 Yang, H., Niimi, H., Keister, J. W., & Lucovsky, G. (2000). The effects of interfacial sub-oxide transition regions and monolayer level nitridation on tunneling currents in silicon devices. IEEE ELECTRON DEVICE LETTERS, 21(2), 76–78. https://doi.org/10.1109/55.821673 Wu, Y., Lucovsky, G., & Lee, Y. M. (2000). The performance and reliability of PMOSFET's with ultrathin silicon nitride/oxide stacked gate dielectrics with nitrided Si-SiO2 interfaces prepared by remote plasma enhanced CVD and post-deposition rapid thermal annealing. IEEE TRANSACTIONS ON ELECTRON DEVICES, 47(7), 1361–1369. https://doi.org/10.1109/16.848278 Wu, Y. D., Xiang, Q., Yang, J. Y. M., Lucovsky, G., & Lin, M. R. (2000). Time-dependent dielectric wearout technique with temperature effect for reliability test of ultrathin (< 2.0 nm) single layer and dual layer gate oxides. MICROELECTRONICS RELIABILITY, 40(12), 1987–1995. https://doi.org/10.1016/s0026-2714(00)00103-7 Keister, J. W., Rowe, J. E., Kolodziej, J. J., Niimi, H., Madey, T. E., & Lucovsky, G. (1999). Band offsets for ultrathin SiO2 and Si3N4 films on Si(111) and Si(100) from photoemission spectroscopy. Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 17(4), 1831–1835. Lucovsky, G., Wu, Y., Niimi, H., Misra, V., & Phillips, J. C. (1999). Bonding constraint-induced defect formation at Si-dielectric interfaces and internal interfaces in dual-layer gate dielectrics. Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 17(4), 1806–1812. Lucovsky, G., Wu, Y., Niimi, H., Misra, V., & Phillips, J. C. (1999). Bonding constraints and defect formation at interfaces between crystalline silicon and advanced single layer and composite gate dielectrics. APPLIED PHYSICS LETTERS, 74(14), 2005–2007. https://doi.org/10.1063/1.123728 Young, A. P., Bandhu, R., Schafer, J., Niimi, H., & Lucovsky, G. (1999). Cathodoluminescence spectroscopy of nitrided SiO2-Si interfaces. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, Vol. 17, pp. 1258–1262. https://doi.org/10.1116/1.581806 Therrien, R., Niimi, H., Gehrke, T., Lucovsky, G., & Davis, R. (1999, September). Charge redistribution at GaN-Ga2O3 interfaces: A microscopic mechanism for low defect density interfaces in remote plasma processed MOS devices prepared on polar GaN faces. MICROELECTRONIC ENGINEERING, Vol. 48, pp. 303–306. https://doi.org/10.1016/s0167-9317(99)00394-9 Therrien, R., Lucovsky, G., & Davis, R. F. (1999, November 16). Charge redistribution at GaN-Ga2O3 interfaces: A microscopic mechanism for low defect density interfaces in remote plasma processed MOS devices prepared on polar GaN faces. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, Vol. 176, pp. 793–796. https://doi.org/10.1002/(sici)1521-396x(199911)176:1<793::aid-pssa793>3.0.co;2-v Wu, Y., & Lucovsky, G. (1999). Improvement of gate dielectric reliability for p plus poly MOS devices using remote PECVD top nitride deposition ultra-thin (2.4-6 nm) gate oxides. MICROELECTRONICS RELIABILITY, 39(3), 365–372. https://doi.org/10.1016/S0026-2714(98)00244-3 Misra, V., Lazar, H., Wang, Z., Wu, Y., Niimi, H., Lucovsky, G., … Hauser, J. R. (1999). Interfacial properties of ultrathin pure silicon nitride formed by remote plasma enhanced chemical vapor deposition. Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 17(4), 1836–1839. Niimi, H., & Lucovsky, G. (1999). Monolayer-level controlled incorporation of nitrogen at Si-SiO(2) interfaces using remote plasma processing. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 17(6), 3185–3196. https://doi.org/10.1116/1.582041 Niimi, H., & Lucovsky, G. (1999). Monolayer-level controlled incorporation of nitrogen in ultrathin gate dielectrics using remote plasma processing: Formation of stacked 'N-O-N' gate dielectrics. Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 17(6), 2610–2621. Lucovsky, G. (1999). Reaction/annealing pathways for forming ultrathin silicon nitride films for composite oxide-nitride gate dielectrics with nitrided crystalline silicon-dielectric interfaces for application in advanced complementary metal-oxide-semiconductor devices. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, Vol. 17, pp. 1340–1351. https://doi.org/10.1116/1.581818 Lucovsky, G. (1999, September 1). Silicon oxide/silicon nitride dual-layer films: a stacked gate dielectric for the 21st century. JOURNAL OF NON-CRYSTALLINE SOLIDS, Vol. 254, pp. 26–37. https://doi.org/10.1016/S0022-3093(99)00432-9 Yang, H., & Lucovsky, G. (1999, September 1). Stability of Si-O-F low-K dielectrics: attack by water molecules as function of near-neighbor Si-F bonding arrangements. JOURNAL OF NON-CRYSTALLINE SOLIDS, Vol. 254, pp. 128–133. https://doi.org/10.1016/S0022-3093(99)00387-7 Keister, J. W., Rowe, J. E., Kolodziej, J. J., Niimi, H., Tao, H. S., Madey, T. E., & Lucovsky, G. (1999). Structure of ultrathin SiO2/Si(111) interfaces studied by photoelectron spectroscopy. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, Vol. 17, pp. 1250–1257. https://doi.org/10.1116/1.581805 Wu, Y., Niimi, H., Yang, H., Lucovsky, G., & Fair, R. B. (1999). Suppression of boron transport out of p(+) polycrystalline silicon at polycrystalline silicon dielectric interfaces. Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 17(4), 1813–1822. Lucovsky, G., & Phillips, J. C. (1999, September). The effects of chemical bonding and band offset constraints at Si-dielectric interfaces on the integration of alternative high-K dielectrics into aggressively-scaled CMOS Si devices. MICROELECTRONIC ENGINEERING, Vol. 48, pp. 291–294. https://doi.org/10.1016/s0167-9317(99)00391-3 Yang, H., Niimi, H., Wu, Y., Lucovsky, G., Keister, J. W., & Rowe, J. E. (1999, September). The effects of interfacial suboxide transition regions on direct tunneling in oxide and stacked oxide-nitride gate dielectrics. MICROELECTRONIC ENGINEERING, Vol. 48, pp. 307–310. https://doi.org/10.1016/s0167-9317(99)00395-0 Wolfe, D. M., Hinds, B. J., Wang, F., Lucovsky, G., Ward, B. L., Xu, M., … Maher, D. M. (1999). Thermochemical stability of silicon-oxygen-carbon alloy thin films: A model system for chemical and structural relaxation at SiC-SiO2 interfaces. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, Vol. 17, pp. 2170–2177. https://doi.org/10.1116/1.581745 Wu, Y. D., Xiang, Q., Bang, D., Lucovsky, G., & Lin, M. R. (1999). Time dependent dielectric wearout (TDDW) technique for reliability of ultrathin gate oxides. IEEE ELECTRON DEVICE LETTERS, 20(6), 262–264. https://doi.org/10.1109/55.767092 Lucovsky, G. (1999). Ultrathin nitrided gate dielectrics: Plasma processing, chemical characterization, performance, and reliability. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 43(3), 301–326. https://doi.org/10.1147/rd.433.0301 Yang, H., & Lucovsky, G. (1998, March). A unified chemical bonding model for defect generation in a-SiH: Photo-induced defects in photovoltaic devices and current-induced defects in TFTs. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, Vol. 37, pp. 1082–1090. https://doi.org/10.1143/JJAP.37.1082 Lucovsky, G. (1998). Atomic structure and thermal stability of silicon suboxides in bulk thin films and in transition regions at Si-SiO2 interfaces. Journal of Non-Crystalline Solids, 230 (part A)(1998 May), 1–14. Young, A. P., Schafer, J., Jessen, G. H., Bandhu, R., Brillson, L. J., Lucovsky, G., & Niimi, H. (1998). Cathodoluminescence measurements of suboxide band-tail and Si dangling bond states at ultrathin Si-SiO2 interfaces. Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 16(4), 2177–2181. Koh, K., Niimi, H., Lucovsky, G., & Green, M. L. (1998). Controlled nitrogen incorporation at Si-SiO2 interfaces by remote plasma-assisted processing. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 37(2), 709–714. https://doi.org/10.1143/JJAP.37.709 Wang, W., Lupke, G., Di Ventra, M., Pantelides, S. T., Gilligan, J. M., Tolk, N. H., … Lucovsky, G. (1998). Coupled electron-hole dynamics at the Si/SiO2 interface. PHYSICAL REVIEW LETTERS, 81(19), 4224–4227. https://doi.org/10.1103/PhysRevLett.81.4224 Schafer, J., Young, A. P., Brillson, L. J., Niimi, H., & Lucovsky, G. (1998). Depth-dependent spectroscopic defect characterization of the interface between plasma-deposited SiO(2) and silicon. APPLIED PHYSICS LETTERS, 73(6), 791–793. https://doi.org/10.1063/1.122003 Lucovsky, G., Niimi, H., Golz, A., & Kurz, H. (1998, January). Differences between silicon oxycarbide regions at SiC-SiO(2) prepared by plasma-assisted oxidation and thermal oxidations. APPLIED SURFACE SCIENCE, Vol. 123, pp. 435–439. https://doi.org/10.1016/S0169-4332(97)00469-8 Lucovsky, G., Yang, H., & Massoud, H. Z. (1998). Heterointerface dipoles: Applications to (a) Si-SiO2, (b) nitrided Si-N-SiO2, and (c) SiC-SiO2 interfaces. Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 16(4), 2191–2198. Lupke, G., Busch, O., Meyer, C., Kurz, H., Brandt, O., Yang, H., … Lucovsky, G. (1998). Interface electronic transition observed by optical second-harmonic spectroscopy in beta-GaN/GaAs(001) heterostructures. PHYSICAL REVIEW B, 57(7), 3722–3725. https://doi.org/10.1103/physrevb.57.3722 Claflin, B., & Lucovsky, G. (1998). Interface formation and thermal stability of advanced metal gate and ultrathin gate dielectric layers. Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 16(4), 2154–2158. Claflin, B., Binger, M., & Lucovsky, G. (1998). Interface studies of tungsten nitride and titanium nitride composite metal gate electrodes with thin dielectric layers. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, Vol. 16, pp. 1757–1761. https://doi.org/10.1116/1.581297 Lucovsky, G., Koh, K., Chaflin, B., & Hinds, B. (1998, January). Interfacial sub-oxide regions at Si-SiO2 interfaces: minimization by post-oxidation rapid thermal anneal. APPLIED SURFACE SCIENCE, Vol. 123, pp. 490–495. https://doi.org/10.1016/S0169-4332(97)00528-X Hinds, B. J., Wang, F., Wolfe, D. M., Hinkle, C. L., & Lucovsky, G. (1998). Investigation of postoxidation thermal treatments of Si/SiO2 interface in relationship to the kinetics of amorphous Si suboxide decomposition. Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 16(4), 2171–2176. Wolfe, D. M., Wang, F., Habermehl, S., & Lucovsky, G. (1998). Low-temperature (<450 degrees C), plasma-assisted deposition of poly-Si thin films on SiO2 and glass through interface engineering (vol 15, pg 1035, 1997). Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 16(1), 207. Lucovsky, G., & Phillips, J. C. (1998). Minimization of dangling bond defects in hydrogenated silicon nitride dielectrics for thin film transistors (TFTs). Journal of Non-Crystalline Solids, 230 (part B)(1998), 1221–1225. Vogel, E. M., Ahmed, K. Z., Hornung, B., Henson, W. K., McLarty, P. K., Lucovsky, G., … Wortman, J. J. (1998). Modeled tunnel currents for high dielectric constant dielectrics. IEEE TRANSACTIONS ON ELECTRON DEVICES, 45(6), 1350–1355. https://doi.org/10.1109/16.678572 Lucovsky, G. (1998). Monolayer incorporation of nitrogen at Si-SiO2 interfaces: Interface characterization and electrical properties. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, Vol. 16, pp. 356–364. https://doi.org/10.1116/1.581005 Lucovsky, G., Niimi, H., Koh, K., & Green, M. L. (1998, February). Monolayer nitrogen atom incorporation at buried Si-SiO2 interfaces: Preparation by remote plasma oxidation/nitridation and characterization by on-line auger electron spectroscopy. SURFACE REVIEW AND LETTERS, Vol. 5, pp. 167–173. https://doi.org/10.1142/S0218625X98000323 Lucovsky, G., Niimi, H., Wu, Y., Parker, C. R., & Hauser, JR. (1998). Optimization of nitrided gate dielectrics by plasma-assisted and rapid thermal processing. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, Vol. 16, pp. 1721–1729. https://doi.org/10.1116/1.581291 Koh, K., Niimi, H., & Lucovsky, G. (1998, January). Plasma-engineered Si-SiO2 interfaces: monolayer nitrogen atom incorporation by low-temperature remote plasma-assisted oxidation in N2O. SURFACE & COATINGS TECHNOLOGY, Vol. 98, pp. 1524–1528. https://doi.org/10.1016/S0257-8972(97)00392-7 Lucovsky, G., & Yang, H. (1998). Reaction pathways for intrinsic and extrinsic defect metastability in light-soaked hydrogenated amorphous silicon - the Staebler-Wronski effect. Journal of Non-Crystalline Solids, 230 (part A)(1998 May), 281–286. Yang, H., & Lucovsky, G. (1998). Stability of Si-O-F low-K dielectrics: Attack by water molecules as function of near-neighbor Si-F bonding arrangements. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, Vol. 16, pp. 1525–1528. https://doi.org/10.1116/1.581181 Hinds, B. J., Wang, F., Wolfe, D. M., Hinkle, C. L., & Lucovsky, G. (1998). Study of SiOx decomposition kinetics and formation of Si nanocrystals in an SiOx matrix. Journal of Non-Crystalline Solids, 230 (part A)(1998 May), 507–512. Yang, H. Y., Niimi, H., & Lucovsky, G. (1998). Tunneling currents through ultrathin oxide/nitride dual layer gate dielectrics for advanced microelectronic devices. JOURNAL OF APPLIED PHYSICS, 83(4), 2327–2337. https://doi.org/10.1063/1.366976 Wu, Y. D., & Lucovsky, G. (1998). Ultrathin nitride/oxide (N/O) gate dielectrics for p(+)-polysilicon gated PMOSFET's prepared by a combined remote plasma enhanced CVD thermal oxidation process. IEEE ELECTRON DEVICE LETTERS, 19(10), 367–369. https://doi.org/10.1109/55.720188 Niimi, H., & Lucovsky, G. (1998, January). Ultrathin oxide gate dielectrics prepared by low temperature remote plasma-assisted oxidation. SURFACE & COATINGS TECHNOLOGY, Vol. 98, pp. 1529–1533. https://doi.org/10.1016/S0257-8972(97)00389-7 Parker, C. G., Lucovsky, G., & Hauser, JR. (1998). Ultrathin oxide-nitride gate dielectric MOSFET's. IEEE ELECTRON DEVICE LETTERS, 19(4), 106–108. https://doi.org/10.1109/55.663529 Lucovsky, G., Banerjee, A., Niimi, H., Koh, K., Hinds, B., Meyer, C., … Kurz, H. (1997, June). Elimination of sub-oxide transition regions at Si-SiO2 interfaces by rapid thermal annealing at 900 degrees C. APPLIED SURFACE SCIENCE, Vol. 117, pp. 202–206. https://doi.org/10.1016/S0169-4332(97)80079-7 Lucovsky, G., & Yang, H. (1997). Fluorine atom induced decreases to the contribution of infrared vibrations to the static dielectric constant of Si-O-F alloy films. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, Vol. 15, pp. 836–843. https://doi.org/10.1116/1.580717 Lucovsky, G., Yang, H., Jing, Z., & Whitten, J. L. (1997, June). Hydrogen atom participation in metastable defect formation at Si-SiO2 interfaces. APPLIED SURFACE SCIENCE, Vol. 117, pp. 192–197. https://doi.org/10.1016/S0169-4332(97)80077-3 Lucovsky, G., & Yang, H. (1997, March). Local atomic bonding in fluorinated silicon oxides: Bond-ionicity-controlled contributions of infrared-active vibrations to the static dielectric constant. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, Vol. 36, pp. 1368–1373. https://doi.org/10.1143/JJAP.36.1368 Yang, H. Y., & Lucovsky, G. (1997, October). Local dipole field contributions to bond-stretching silicon-hydrogen vibrational modes on flat and vicinal Si(111) surfaces. SURFACE REVIEW AND LETTERS, Vol. 4, pp. 891–896. https://doi.org/10.1142/S0218625X97000985 Hinds, B. J., Aspenes, D. E., & Lucovsky, G. (1997). Low pH chemical etch route for smooth H-terminated Si(100) and study of subsequent chemical stability. Environmental, safety, and health issues in IC production: Symposium held December 4-5, 1996, Boston, Massachusetts, U.S.A. (Materials Research Society Symposium proceedings, no. 447), 191–196. Pittsburgh, PA: Materials Research Society. Wolfe, D. M., Wang, F., & Lucovsky, G. (1997). Low-temperature (<450 degrees C), plasma-assisted deposition of poly-Si thin films on SiO2 and glass through interface engineering. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, Vol. 15, pp. 1035–1040. https://doi.org/10.1116/1.580426 Lucovsky, G., Banerjee, A., Hinds, B., Claflin, B., Koh, K., & Yang, H. (1997, June). Minimization of sub-oxide transition regions at Si-SiO2 interfaces by 900 degrees C rapid thermal annealing. MICROELECTRONIC ENGINEERING, Vol. 36, pp. 207–210. https://doi.org/10.1016/s0167-9317(97)00049-x Golz, A., Lucovsky, G., Koh, K., Wolfe, D., Niimi, H., & Kurz, H. (1997). Plasma-assisted formation of low defect density SiC-SiO2 interfaces. Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 15(4), 1097–1104. Lucovsky, G., Yang, H., Jing, Z., & Whitten, J. L. (1997). The role of hydrogen atoms in metastable defect formation at Si-SiO2 interfaces and in hydrogenated amorphous Si (a-Si:H). Physica Status Solidi. A, Applications and Materials Science, 159(1997), 5–10. Niimi, H., Koh, K., & Lucovsky, G. (1997, May). Ultra-thin gate dielectrics prepared by low-temperature remote plasma-assisted oxidation. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, Vol. 127, pp. 364–368. https://doi.org/10.1016/S0168-583X(96)00958-5 MASNARI, N. A., HAUSER, JR, LUCOVSKY, G., MAHER, D. M., MARKUNAS, R. J., OZTURK, M. C., & WORTMAN, J. J. (1993). CENTER FOR ADVANCED ELECTRONIC MATERIALS PROCESSING. PROCEEDINGS OF THE IEEE, 81(1), 42–59. https://doi.org/10.1109/JPROC.1993.752025 Esser, A. H., H., K., H., W., C., P., G.N., & Lucovsky, G. (1993). Femtosecond spectroscopic study of ultrafast carrier relaxation in hydrogenated amorphous silicon a-Si:H. Journal of Applied Physics, 73, 1235. Pollack, F. H., Shen, H. E., & Lucovsky, G. (1993). Method for determining interface properties of semiconductor materials by photoreflectance. Washington, DC: U.S. Patent and Trademark Office. Kurz H., E. A., Heesel H., L. G., Wang C., & G., P. (1993). Optical-detection of photoconductivity in hydrogenated amorphous silicon, a-Si:H, in the subpicosecond time-domain. Journal of Non-Crystalline Solids, 166, 575–578. Esser, A. H., H., K., H., W., C., P., G.N., & Lucovsky, G. (1993). Transport processes of optically generated free carriers in amorphous silicon, a-Si:H in the femtosecond time regime. Physical Review, B(47), 3593. PARSONS, G. N., WANG, C., & LUCOVSKY, G. (1990). ANNEALING OF INTRINSIC AND PHOTOINDUCED DEFECTS IN HYDROGENATED AMORPHOUS-SILICON. THIN SOLID FILMS, 193(1-2), 577–587. https://doi.org/10.1016/0040-6090(90)90209-v Parsons, G. N., Wang, C., & Lucovsky, G. (1990). Post-deposition relaxation of electronic defects in hydrogenated amorphous silicon. Applied Physics Letters, 56, 1895–1897. Parsons, G. N., & Lucovsky, G. (1990). Silicon-hydrogen bond-stretching vibrations in hydrogenated amorphous silicon, nitrogen alloys. Physical Review, B(41), 1664–1667. Esser, A., Seibert, K., Kurz, H., Parsons, G. N., Wang, C., Davidson, B., … Nemanich, R. J. (1990). Ultrafast recombination and trapping in amorphous silicon. Physical Review, B(41), 2879–2884. Parsons, G. N., Tsu, T. V., & Lucovsky, G. (1989). Defects in a-Si:H films produced by remote plasma enhanced CVD. Journal of Non-Crystalline Solids, 107, 295–300. Kim, S. S., Parsons, G. N., & Lucovsky, G. (1989). Dependence of the chemical, electrical and photoelectronic properties of a-Si:H/Si3N4 interfaces on the deposition sequence. Journal of Non-Cyrstalline Solids, 114. TSU, D. V., LUCOVSKY, G., & DAVIDSON, B. N. (1989). EFFECTS OF THE NEAREST NEIGHBORS AND THE ALLOY MATRIX ON SIH STRETCHING VIBRATIONS IN THE AMORPHOUS SIOR-H (0-LESS-THAN-R-LESS-THAN-2) ALLOY SYSTEM. PHYSICAL REVIEW B, 40(3), 1795–1805. https://doi.org/10.1103/physrevb.40.1795 Tsu, D. V., Parsons, G. N., Lucovsky, G., & Watkins, M. W. (1989). Mass and optical emission spectroscopic studies of the gas phase during the deposition of SiO2 and a-Si:H by remote plasma enhanced chemical vapor deposition. Journal of Vacuum Science & Technology, A(7), 1115–1123. Parsons, G. N., Tsu, D. V., Wang, C., & Lucovsky, G. (1989). Precursors for the deposition of amorphous silicon hydrogen alloys by remote plasma enhanced CVD. Journal of Vacuum Science & Technology, A(7), 1124–1129. Parsons, G. N., Wang, C., & Lucovsky, G. (1989). Reduction of defects by high temperature (180 degrees c-240 degrees c) annealing in room temperature deposited hydrogenated amorphous silicon. Journal of Non-Crystalline Solids, 114. Parsons, G. N., Tsu, D. V., & Lucovsky, G. (1988). Properties of intrinsic and doped a-Si:H deposited by remote plasma enhanced chemical vapor deposition. Journal of Vacuum Science & Technology, A(6), 1912–1916. NEMANICH, R. J., GLASS, J. T., LUCOVSKY, G., & SHRODER, R. E. (1988). RAMAN-SCATTERING CHARACTERIZATION OF CARBON BONDING IN DIAMOND AND DIAMONDLIKE THIN-FILMS. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 6(3), 1783–1787. https://doi.org/10.1116/1.575297 Tsu, D. V., Parsons, G. N., & Lucovsky, G. (1988). Spectroscopic emission studies of O2/He and N2/He plasmas in remote plasma enhanced chemical vapor deposition. Journal of Vacuum Science & Technology, A(6), 1849–1854. Lucovsky, G., Manitini, M. J., Srivastava, J. K., & Irene, E. A. (1987). Low-temperature growth of silicon dioxide films - a study of chemical bonding by ellipsometry and infrared-spectroscopy. Journal of Vacuum Science & Technology. B, Microelectronics Processing and Phenomena, 5(2), 530–537. PARSONS, G. N., TSU, D. V., & LUCOVSKY, G. (1987). OPTICAL AND ELECTRICAL-PROPERTIES OF A-SI-H FILMS GROWN BY REMOTE PLASMA ENHANCED CHEMICAL VAPOR-DEPOSITION (RPECVD). JOURNAL OF NON-CRYSTALLINE SOLIDS, 97-8, 1375–1378. https://doi.org/10.1016/0022-3093(87)90329-2 Parsons, G. N., Kusano, C., & Lucovsky, G. (1987). Photoelectronic properties of a-Si:H and a-Ge:H thin films in surface cell structures. Journal of Vacuum Science & Technology, A(5), 1655–1660. Parsons, G. N., Cook, J. W., Jr., Lucovsky, G., Lin, S. Y., & Mantini, M. J. (1986). Deposition of a-Si,Sn:H alloy films by reactive magnetron sputtering from separate Si and Sn targets. Journal of Vacuum Science & Technology, A(4), 470–474. PAI, P. G., CHAO, S. S., TAKAGI, Y., & LUCOVSKY, G. (1986). INFRARED SPECTROSCOPIC STUDY OF SIOX FILMS PRODUCED BY PLASMA ENHANCED CHEMICAL VAPOR-DEPOSITION. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 4(3), 689–694. https://doi.org/10.1116/1.573833 PANKOVE, J. I., ZANZUCCHI, P. J., MAGEE, C. W., & LUCOVSKY, G. (1985). HYDROGEN LOCALIZATION NEAR BORON IN SILICON. APPLIED PHYSICS LETTERS, 46(4), 421–423. https://doi.org/10.1063/1.95599 Rudder, R. A., Parsons, G. N., Cook, J. W., Jr., & Lucovsky, G. (1985). Low defect density Si,Ge:H alloy films produced by magnetron sputtering from separate Si and Ge cathodes. Journal of Non-Crystalline Solids, 77 & 78, 885–889.